CN104393159A - LED lamp filament - Google Patents
LED lamp filament Download PDFInfo
- Publication number
- CN104393159A CN104393159A CN201410563842.8A CN201410563842A CN104393159A CN 104393159 A CN104393159 A CN 104393159A CN 201410563842 A CN201410563842 A CN 201410563842A CN 104393159 A CN104393159 A CN 104393159A
- Authority
- CN
- China
- Prior art keywords
- wafer
- led
- pad
- lamp filament
- wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The invention discloses an LED lamp filament, which comprises a transparent substrate and LED wafers arranged on the transparent substrate. The LED wafers are electrically connected via metal wires to form a path; welding pads are formed in a physical mode or a chemical mode on the wafer fixing surface of the substrate; transmittance of each welding pad is less than 30%; each LED wafer is fixedly placed on each welding pad and is totally located in the welding pad range; fluorescence glue is formed on the wafer in a dispensing or mould pressing mode; and the fluorescence glue fully covers the wafers and the metal wires. According to the LED lamp filament, wafers are fixedly placed on opaque welding pads formed on the wafer fixing surface of the transparent substrate, a single-surface dispensing or a single-surface mould pressing mode is then adopted to form the fluorescence glue, the welding pad reflects blue light on the bottom surface and the side surface of the wafer to the fluorescence glue to be converted into needed white light, an all-round light emitting LED lamp filament device is manufactured, the manufacturing process is simplified, the material cost is reduced, and no blue leakage phenomenon happens to the side surface of the lamp filament.
Description
Technical field
The present invention relates to LED, particularly relate to the LED silk of 360 ° of full angle luminescences.
Background technology
LED silk can realize 360 ° of full angle luminescences, and without the need to installing the optics of lens and so on additional, can be applicable to the illuminating products such as crystal pendant lamp, candle lamp, bulb lamp, wall lamp, brings unprecedented lighting experience.
The existing LED silk product be made up of the transparency carrier such as sapphire, glass, luminous in order to realize all-round light, the surrounding mold pressing fluorescent glue at transparency carrier filament or the front and back at transparency carrier filament is needed to carry out two-sided glue, but mold pressing fluorescent glue or substrate two-sided some fluorescent glue mode, processing procedure is loaded down with trivial details, material amounts is large, and cost is high, and the filament device side of substrate two-sided glue easily occurs leaking blue phenomenon.
Summary of the invention
In view of this, provide a kind of processing procedure to simplify and effectively can avoid Lou blue LED silk.
A kind of LED silk, comprise transparency carrier and be arranged at the LED wafer on transparency carrier, described LED wafer is electrically connected by plain conductor and forms path, the one side of described substrate die bond is formed with pad by the mode of physics or chemistry, the light transmittance of described pad is less than 30%, described LED wafer to be fixedly arranged on pad and to be positioned at pad scope completely, and described wafer is formed with fluorescent glue, the complete coating wafer of described fluorescent glue and plain conductor by some glue or press moulding mode.
Further, the shape of described pad is rectangle, circle or irregularly shaped, and the average thickness of pad is more than or equal to 0.01 μm.
Further, the area of described pad is more than 1.05 times of single led chip area.
Further, described substrate is sapphire, pottery, high polymer or glass.
Compared to prior art, the opaque pad that LED silk of the present invention is shaping on transparency carrier die bond face is installed with wafer, one side point glue or one side mold pressing form fluorescent glue again, pad by the blu-ray reflection of wafer bottom surface and side to fluorescent glue to be converted into required white light, make the LED silk device of all-round light luminescence, simplify processing procedure, reduce Material Cost; And filament side is without the blue phenomenon of leakage.
Accompanying drawing explanation
Fig. 1 is the structural representation of LED silk of the present invention.
Fig. 2 is another angular views of LED silk of the present invention.
Fig. 3 is the cutaway view of LED silk of the present invention along the III-III line of Fig. 1.
Embodiment
Below with reference to the drawings and the specific embodiments, the present invention is described in detail.
As shown in Figure 1, Figure 2 and shown in Fig. 3, LED silk of the present invention comprises substrate 10, pad 20, LED wafer 30, wire 40 and fluorescent glue 50.
Described substrate 10 can be the transparency carrier that sapphire, pottery, high polymer or glass etc. are made, in the one side of described substrate 10 for die bond, one or more metals or the light tight material of non-metal kind are formed one or more pad 20 by the mode such as physics, chemistry, and the light transmittance of pad 20 is less than 30%.The shape of the pad 20 after shaping is other rules or irregularly shaped such as rectangle, circle, and its average thickness H is more than or equal to 0.01 μm.
Described LED wafer 30 is fixed on pad 20, couples together formation path by the plain conductor 40 of conduction.The area S1 of single pad 20 is more than 1.05 times of single led chip area S2, and each pad 20 can be installed with single or multiple LED wafer 30, and wafer 30 does not exceed the scope of pad 20.After described LED wafer 30 is fixedly arranged in pad 20, by a glue or press moulding mode, fluorescent glue 50 is formed in the side that substrate 10 is installed with wafer 30, make fluorescent glue 50 coating wafer 30 and plain conductor 40 completely, form LED silk device of the present invention.
Opaque pad 20 shaping on transparency carrier 10 die bond face is installed with wafer 30 in the present invention, one side point glue or one side mold pressing form described fluorescent glue 50 again, pad 20 by the blu-ray reflection of wafer 30 bottom surface and side to fluorescent glue 50 to be converted into required white light, make the LED silk device of all-round light luminescence, simplify processing procedure, reduce Material Cost; And filament side is without the blue phenomenon of leakage.It should be noted that; the present invention is not limited to above-mentioned execution mode, and according to creative spirit of the present invention, those skilled in the art can also make other changes; these changes done according to creative spirit of the present invention, all should be included within the present invention's scope required for protection.
Claims (4)
1. a LED silk, comprise transparency carrier and be arranged at the LED wafer on transparency carrier, described LED wafer is electrically connected by plain conductor and forms path, it is characterized in that: the one side of described substrate die bond is formed with pad by the mode of physics or chemistry, the light transmittance of described pad is less than 30%, described LED wafer to be fixedly arranged on pad and to be positioned at pad scope completely, described wafer is formed with fluorescent glue, the complete coating wafer of described fluorescent glue and plain conductor by some glue or press moulding mode.
2. LED silk as claimed in claim 1, it is characterized in that, the shape of described pad is rectangle, circle or irregularly shaped, and the average thickness of pad is more than or equal to 0.01 μm.
3. LED silk as claimed in claim 1, it is characterized in that, the area of described pad is more than 1.05 times of single led chip area.
4. LED silk as claimed in claim 1, it is characterized in that, described substrate is sapphire, pottery, high polymer or glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410563842.8A CN104393159A (en) | 2014-10-21 | 2014-10-21 | LED lamp filament |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410563842.8A CN104393159A (en) | 2014-10-21 | 2014-10-21 | LED lamp filament |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104393159A true CN104393159A (en) | 2015-03-04 |
Family
ID=52611029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410563842.8A Pending CN104393159A (en) | 2014-10-21 | 2014-10-21 | LED lamp filament |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104393159A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050263776A1 (en) * | 2002-07-15 | 2005-12-01 | Min-Hsun Hsieh | Semiconductor light-emitting device and method for forming the same |
| US20090146155A1 (en) * | 2007-12-11 | 2009-06-11 | Foxsemicon Integrated Technology, Inc. | Light-emitting diode |
| CN202996892U (en) * | 2012-11-30 | 2013-06-12 | 深圳市璨阳光电有限公司 | Led packaging structure |
| CN204204915U (en) * | 2014-10-21 | 2015-03-11 | 深圳市瑞丰光电子股份有限公司 | A kind of LED silk |
-
2014
- 2014-10-21 CN CN201410563842.8A patent/CN104393159A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050263776A1 (en) * | 2002-07-15 | 2005-12-01 | Min-Hsun Hsieh | Semiconductor light-emitting device and method for forming the same |
| US20090146155A1 (en) * | 2007-12-11 | 2009-06-11 | Foxsemicon Integrated Technology, Inc. | Light-emitting diode |
| CN202996892U (en) * | 2012-11-30 | 2013-06-12 | 深圳市璨阳光电有限公司 | Led packaging structure |
| CN204204915U (en) * | 2014-10-21 | 2015-03-11 | 深圳市瑞丰光电子股份有限公司 | A kind of LED silk |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150304 |