CN104392995B - A kind of transistor, drive circuit and its driving method, display device - Google Patents

A kind of transistor, drive circuit and its driving method, display device Download PDF

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Publication number
CN104392995B
CN104392995B CN201410597286.6A CN201410597286A CN104392995B CN 104392995 B CN104392995 B CN 104392995B CN 201410597286 A CN201410597286 A CN 201410597286A CN 104392995 B CN104392995 B CN 104392995B
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transistor
grid
source electrode
signal
drain electrode
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CN201410597286.6A
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Chinese (zh)
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CN104392995A (en
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王博
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京东方科技集团股份有限公司
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Abstract

The embodiment of the present invention provides a kind of transistor, drive circuit and its driving method, display device, is related to display technology field, and can be achieved that transistor size need not be increased can improve the size of transistor output current.The transistor includes P-type semiconductor substrate, and the base stage on first area, the p-type sheath that base stage is adulterated by positive charge is constituted;Source electrode and drain electrode on second area, the second N-type sheath that source electrode adulterates with the first N-type sheath adulterated respectively by negative electrical charge that drains with negative electrical charge are constituted;First N-type sheath, the second N-type sheath, the doping concentration of p-type sheath are all higher than the doping concentration of P-type semiconductor substrate;Also include by gate insulation layer and the source electrode, the grid for the mutually insulated that drains;Wherein, source electrode is simultaneously as emitter stage, and drain electrode is used as colelctor electrode simultaneously.For transistor and the drive circuit including the transistor preparation.

Description

A kind of transistor, drive circuit and its driving method, display device

Technical field

The present invention relates to display technology field, more particularly to a kind of transistor, drive circuit and its driving method, display dress Put.

Background technology

Core component in organic electroluminescence display device and method of manufacturing same (OLED) is light-emitting component, i.e. OLED, its gamma correction Than in the size of current of input, therefore, in order to improve the display effect of OLED display, it usually needs increase drives it to light Transistor output current.

As shown in figure 1, prior art is mainly by increasing grid 40 and source electrode in the overlay region of active layer 50 in transistor 21 improve leading for transistor with the breadth length ratio (W/L) in the 22 relative regions (channel region i.e. under transistor turns state) that drain Logical ability, so as to improve the size of current exported after transistor turns.The influence of the factors such as patterning processes is limited to, is typically existed Increase to improve W/L ratio in the case of not changing L numerical value and by W numerical value, so inevitably result in the overall chi of transistor Very little increase, causes the aperture opening ratio of display device to decline, and influences display quality.

The content of the invention

In consideration of it, to solve problem of the prior art, embodiments of the invention provide a kind of transistor, drive circuit and its Driving method, display device, the size of transistor output current can be improved without increasing transistor size.

To reach above-mentioned purpose, embodiments of the invention are adopted the following technical scheme that:

On the one hand, the embodiments of the invention provide a kind of transistor, including, P-type semiconductor substrate, the P-type semiconductor Substrate includes first area and second area;Base stage on the first area, the p-type that the base stage is adulterated by positive charge Sheath is constituted;Source electrode and drain electrode on the second area, the source electrode are adulterated by negative electrical charge respectively with the drain electrode The second N-type sheath for adulterating of the first N-type sheath and negative electrical charge constitute;The first N-type sheath, second N-type The doping concentration of sheath and the p-type sheath is all higher than the doping concentration of the P-type semiconductor substrate;Also include logical Cross gate insulation layer and the source electrode, the grid for the mutually insulated that drains;Wherein, the source electrode is simultaneously as emitter stage, the drain electrode It is used as colelctor electrode simultaneously.

Optionally, the P-type semiconductor substrate includes any in P-type silicon substrate, p-type germanium substrate, P-type silicon germanium substrate Kind.

The embodiment of the present invention additionally provides a kind of drive circuit, including, the first transistor, the grid of the first transistor Scanning signal is connected, the source electrode of the first transistor connects the first data-signal;Second transistor, the second transistor is Transistor described in claim 1 or 2, the grid of the second transistor connects the drain electrode of the first transistor, and described the The output end of the drain electrode connection collector voltage of two-transistor, the source electrode of the second transistor connects the output of output current End, the base stage of the second transistor connects source electrode and the drain electrode of the second transistor respectively;Third transistor, the described 3rd The source electrode of transistor connects the base stage of the second transistor, the drain electrode connection base voltage of the third transistor;4th is brilliant Body pipe, the grid connection scanning signal of the 4th transistor, the source electrode of the 4th transistor connects the second data-signal, institute State the grid of the drain electrode connection third transistor of the 4th transistor.

Optionally, the drive circuit also includes the first electric capacity, and one end of first electric capacity connects second crystal The grid of pipe, the other end ground connection of first electric capacity.

Optionally, the drive circuit also includes the second electric capacity, and one end of second electric capacity connects the 3rd crystal The grid of pipe, the other end ground connection of second electric capacity.

The embodiment of the present invention additionally provides a kind of driving method of above-mentioned drive circuit, including, pass through scanning signal, first Data-signal and the second data-signal are respectively turned on the first transistor and the 4th transistor, by first data-signal and Second data-signal is respectively written into and is maintained at the grid of second transistor and the grid of third transistor;By colelctor electrode electricity Pressure writes and is maintained at the drain electrode of the second transistor;By adjust the grid for writing the second transistor described first Voltage swing, the voltage swing of second data-signal of the grid of the write-in third transistor of data-signal, respectively Control the second transistor conducting electric current size and be input to the second transistor base stage base current it is big It is small, output current is exported by the source electrode of the second transistor;Wherein, the output current and the conducting electric current, the base Electrode current meets default functional relation, and the independent variable of the functional relation is the size of the conducting electric current and base stage electricity The size of stream, dependent variable is the size of the output current.

On the other hand, the embodiment of the present invention additionally provides another transistor, including, N-type semiconductor substrate, the N-type Semiconductor substrate includes first area and second area;Base stage on the first area, the base stage is mixed by positive charge Miscellaneous N-type sheath is constituted;Source electrode and drain electrode on the second area, the source electrode is with the drain electrode respectively by negative electricity First p-type sheath of lotus doping is constituted with the second p-type sheath that negative electrical charge adulterates;The first N-type sheath, described The doping concentration of two N-type sheaths and the p-type sheath is all higher than the doping concentration of the P-type semiconductor substrate;Also wrap Include the grid by gate insulation layer and the source electrode, the mutually insulated that drains;Wherein, the drain electrode is described simultaneously as emitter stage Source electrode is used as colelctor electrode simultaneously.

Optionally, the N-type semiconductor substrate includes any in N-type silicon substrate, N-type germanium substrate, N-type silicon-Germanium substrate Kind.

The embodiment of the present invention additionally provides another drive circuit, including, the first transistor, the grid of the first transistor Pole connects scanning signal, and the source electrode of the first transistor connects the first data-signal;Second transistor, the second transistor For the transistor described in claim 3 or 4, the grid of the second transistor connects the drain electrode of the first transistor, described The source electrode of second transistor connects the output end of collector voltage, the output of the drain electrode connection output current of the second transistor End, the base stage of the second transistor connects source electrode and the drain electrode of the second transistor respectively;Third transistor, the described 3rd The source electrode of transistor connects the base stage of the second transistor, the drain electrode connection base voltage of the third transistor;4th is brilliant Body pipe, the grid connection scanning signal of the 4th transistor, the source electrode of the 4th transistor connects the second data-signal, institute State the grid of the drain electrode connection third transistor of the 4th transistor.

Optionally, the drive circuit also includes the first electric capacity, and one end of first electric capacity connects second crystal The grid of pipe, the other end ground connection of first electric capacity.

Optionally, the drive circuit also includes the second electric capacity, and one end of second electric capacity connects the 3rd crystal The grid of pipe, the other end ground connection of second electric capacity.

The embodiment of the present invention additionally provides a kind of driving method of above-mentioned drive circuit, including, pass through scanning signal, first Data-signal and the second data-signal are respectively turned on the first transistor and the 4th transistor, by first data-signal and Second data-signal is respectively written into and is maintained at the grid of second transistor and the grid of third transistor;By colelctor electrode electricity Pressure writes and is maintained at the drain electrode of the second transistor;By adjust the grid for writing the second transistor described first Voltage swing, the voltage swing of second data-signal of the grid of the write-in third transistor of data-signal, respectively Control the second transistor conducting electric current size and be input to the second transistor base stage base current it is big It is small, output current is exported by the drain electrode of the second transistor;Wherein, the output current and the conducting electric current, the base Electrode current meets default functional relation, and the independent variable of the functional relation is the size of the conducting electric current and base stage electricity The size of stream, dependent variable is the size of the output current.

Another further aspect, the embodiment of the present invention additionally provide a kind of display device, including the above-mentioned drive circuit.

Optionally, the display device includes organic electroluminescence display device and method of manufacturing same.

Above-mentioned transistor provided in an embodiment of the present invention, when inputting the base current Ib more than zero to the base stage, to institute State grid input more than zero grid voltage Vg, and to it is described drain electrode input more than zero collector voltage Vc when, the source electrode Simultaneously as emitter stage (Emitter), the drain electrode is used as colelctor electrode (Collector) simultaneously;Therefore, transistor now is same When had concurrently MOSFET pipe and BJT pipes function, be operated under MOSFET-BJT admixture, from above-mentioned transistor export Electric current I (out) changes with grid voltage Vg and base current Ib change, i.e., compared with the transistor that prior art is provided Increase output current I (out) size by introducing Ib, it is achieved thereby that need not increase the size of transistor can improve crystalline substance The ability of body pipe output current.

Further, since working as Vg<0, Ib>When 0, i.e., when MOSFET pipes are not turned on only conducting BJT pipes, above-mentioned transistor There is certain electric current to output and (determined by Ib), transistor operating current is adjusted by grid voltage Vg so as to add Scope.

Brief description of the drawings

In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with Other accompanying drawings are obtained according to these accompanying drawings.

A kind of structural representation for transistor that Fig. 1 provides for prior art;

Fig. 2 is a kind of structural representation one of transistor provided in an embodiment of the present invention;

Fig. 3 is the operation principle schematic diagram of the transistor shown in Fig. 2;

Fig. 4 is a kind of different working condition contrast table of transistor provided in an embodiment of the present invention;

Fig. 5 be a kind of transistor provided in an embodiment of the present invention under hybrid working state with the transistor of prior art Electric current curve of output contrast schematic diagram;

Fig. 6 is a kind of structural representation two of transistor provided in an embodiment of the present invention;

Fig. 7 is the operation principle schematic diagram of the transistor shown in Fig. 6;

Fig. 8 is a kind of structural representation one of drive circuit provided in an embodiment of the present invention;

Fig. 9 is a kind of structural representation two of drive circuit provided in an embodiment of the present invention.

Reference:

10-P type Semiconductor substrates;11-N type Semiconductor substrates;101/111- first areas;102/112- second areas; 20- base stages;21- source/emitters;22- drain/collectors;30- gate insulation layers;40- grids;50- active layers.

Embodiment

Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made Embodiment, belongs to the scope of protection of the invention.

The embodiments of the invention provide a kind of transistor, as shown in Fig. 2 the transistor includes:P-type semiconductor substrate 10, the P-type semiconductor substrate 10 includes first area 101 and second area 102;Base on the first area 101 Pole 20, the p-type sheath that the base stage 20 is adulterated by positive charge is constituted;Source electrode 21 and leakage on the second area 102 Pole 22, the 2nd N that the first N-type sheath that the source electrode 21 is adulterated by negative electrical charge respectively with the drain electrode 22 adulterates with negative electrical charge Type sheath is constituted;The doping concentration of the first N-type sheath, the second N-type sheath and the p-type sheath It is all higher than the doping concentration of the P-type semiconductor substrate 10;The transistor is also included by gate insulation layer 30 and the source electrode 21st, the grid 40 of 22 mutually insulateds of drain electrode.

Wherein, the source electrode 21 is simultaneously as emitter stage (Emitter), and the drain electrode 22 is used as colelctor electrode simultaneously (Collector)。

It should be noted that first, when the transistor works, to the base stage 20 input be more than zero electric current claim For base current (hereinafter mark is), the voltage inputted to the grid 40 more than zero is referred to as grid voltage (hereinafter Mark is), to the drain electrode 22, i.e., the voltage more than zero inputted simultaneously as the colelctor electrode is referred to as collector voltage (hereinafter mark is).

Secondth, using the method for diffusion technique or ion implanting in the formation of P-type semiconductor substrate Epitaxial growth by just What the base stage 20 of the p-type sheath composition of charge-doping, the first N-type sheath adulterated respectively by negative electrical charge and negative electrical charge adulterated The source electrode 21 that second N-type sheath is constituted and drain electrode 22.Wherein, to the first N-type sheath, the second N-type sheath, And the specific doping concentration of the p-type sheath is not construed as limiting, as long as meeting the first N-type sheath, second N-type The doping concentration of sheath and the p-type sheath is all higher than the doping concentration of the P-type semiconductor substrate 10.This In, with reference to shown in Fig. 1, " P+ " represents positive charge doping, and " N+ " represents negative electrical charge doping.

Further as shown in figure 4, above-mentioned transistor provided in an embodiment of the present invention, by giving grid 40, the and of base stage 20 The suitable voltage in the port of source electrode 21 so that above-mentioned transistor can be operated in bipolar junction transistor (BJT, Bipolar respectively Junction Transistor) mode of operation, mos field effect transistor (Metal Oxide Silicon Field Effect Transistor, abbreviation MOSFET) under mode of operation and the blend modes of operation of the two, it is specific as follows It is described:

Work as Vg<0, Ib<When 0, transistor can not be turned on, now, the electric current of transistor output (hereinafter mark for I (out)) be zero, i.e., on this condition, the transistor is not turned on, without work.

Work as Vg<0, Ib>When 0, base stage 20, source electrode 21, drain electrode 22 and P-type semiconductor substrate 10 are equivalent to constituting one Individual BJT pipes;Wherein, source electrode 21 is equivalent to emitter stage (Emitter), and drain electrode 22 is equivalent to colelctor electrode (Collector).That is, exist Transistor equivalent is managed in a BJT under the conditions of this, due to collector voltage Vc of the access more than zero of drain electrode 22, therefore, BJT Source electrode 21 (i.e. colelctor electrode Collector) is pointed in the direction of conducting electric current I (BJT) in pipe such as Fig. 3.

Here, because collector voltage Vc numerical value and the size model number of transistor are relevant, it is not especially limited herein, example Can be such as several~tens volts of volts.

Work as Vg>0, Ib<When 0, grid 40, source electrode 21, drain electrode 22 and P-type semiconductor substrate 10 are equivalent to constituting one Individual MOSFET pipes;That is, the transistor equivalent is managed in a BJT on this condition, due to current collection of the access of drain electrode 22 more than zero Pole tension Vc, therefore, the channel current I of the conducting electric current in the MOSFET pipes determined by grid voltage Vg, i.e. MOSFET pipes Pointed out in the direction of (MOSFET channel) such as Fig. 3 from source electrode 21.

Work as Vg>0, Ib>When 0, due to collector voltage Vc of the access more than zero of drain electrode 22, source electrode 21 also serves as transmitting simultaneously Pole, drain electrode 22 also serves as colelctor electrode simultaneously, i.e., now, by base stage 20, source electrode 21, drain electrode 22, grid 40 and P-type semiconductor The above-mentioned transistor that substrate 10 is constituted has had the function of MOSFET pipes and BJT pipes concurrently simultaneously, and therefore, the working condition is referred to as MOSFET-BJT hybrid mode (i.e. hybrid working state).In the case, because MOSFET pipes and BJT pipes are all led simultaneously Logical, i.e., the electric current I (out) exported from above-mentioned transistor is relevant with grid voltage Vg and collector current Ib.

Wherein, when above-mentioned transistor is operated in MOSFET-BJT hybrid states, output current I (out) big I Drawn by below equation:

I (BJT)=(1+ β) Ib;Formula (1)

I (out)=I (MOSFETchannel)+I (BJT);Formula (2)

I (out)=I (MOSFETchannel)+(1+ β) Ib;Formula (3)

Wherein, β is amplification coefficient, and it is defined as the ratio of emitter current and base current, i.e. Ie/Ib.Due to amplification Factor beta is relevant with the size model number of transistor, is not especially limited herein, for example, can be tens~hundreds of.

The transistor given for parameters such as size model numbers, magnificationfactorβ is a positive definite value.Therefore, can by formula (3) Know, when above-mentioned transistor is operated in MOSFET-BJT hybrid states, output current I (out) size is by I (MOSFET Channel) determined with Ib, equivalent to introducing Ib electric currents in output current.Shown in further Fig. 5, it can be seen that The crystal of the prior art of bottom in the curve and figure of output current I (out) under MOSFET-BJT hybrid working conditions The curve for managing the output current I (out) of (such as MOSFET pipes) is similar, simply under MOSFET-BJT hybrid working conditions Output current I (out) becomes big due to the introducing of I (BJT) electric current, and I (BJT) electric current equivalent to introducing has raised output current I (out) integrated curved value.Also, work as Vg<0, Ib>When 0, i.e., when MOSFET pipes are not turned on only conducting BJT pipes, on Stating transistor has had certain electric current to output and (determined by Ib), and transistor is adjusted by grid voltage Vg so as to add The scope of operating current.

Based on this, above-mentioned transistor provided in an embodiment of the present invention, when being inputted to the base stage 20, the base stage more than zero is electric Flow Ib, to the grid 40 input more than zero grid voltage Vg, and to it is described drain electrode 22 input more than zero collector voltages During Vc, the source electrode 21 is simultaneously as emitter stage (Emitter), and the drain electrode 22 is used as colelctor electrode (Collector) simultaneously;I.e. Transistor now has had the function of MOSFET pipes and BJT pipes concurrently simultaneously, is operated under MOSFET-BJT admixture, so that So that the electric current I (out) exported from above-mentioned transistor changes with grid voltage Vg and base current Ib change, i.e., with showing The transistor for having technology to provide is compared increases output current I (out) size by introducing Ib, it is achieved thereby that without increase The size of transistor can improve the ability of transistor output current.

Further, since working as Vg<0, Ib>When 0, i.e., when MOSFET pipes are not turned on only conducting BJT pipes, above-mentioned transistor There is certain electric current to output and (determined by Ib), transistor operating current is adjusted by grid voltage Vg so as to add Scope.

Preferred on the basis of the above, the P-type semiconductor substrate includes P-type silicon substrate, p-type germanium substrate, P-type silicon germanium lining Any of bottom.

Here, the P-type semiconductor substrate 10 refers to be formed by mixing micro p-type ion in the semiconductor substrate Substrate;Wherein, p-type ion can be by trivalents such as boron ion (B), indium ion (In), gallium ion (Ga) and aluminium ions (Al) just Ion (M3+) in one or more.

Semiconductor substrate directly can be made up of any of silicon substrate (Si), germanium substrate (Ge), silicon-Germanium substrate, can also By SOI substrate (Silicon-On-Insulator is formed at the silicon substrate on insulator), GOI substrates (Germanium- On-Insulator, that is, be formed at the germanium substrate on insulator), SGOI substrates (Silicon-Germanium-On- Any of Insulator, that is, be formed at the silicon-Germanium substrate on insulator), and not limited to this.

The embodiment of the present invention additionally provides another transistor, as shown in fig. 6, the transistor includes:N-type semiconductor is served as a contrast Bottom 11, the N-type semiconductor substrate 11 includes first area 111 and second area 112;On the first area 111 Base stage 20, the N-type sheath that the base stage 20 is adulterated by positive charge is constituted;Source electrode 21 on the second area 112 with Drain electrode 22, the first p-type sheaths that the source electrode 21 is adulterated by negative electrical charge respectively with the drain electrode 22 and negative electrical charge adulterate the Two p-type sheaths are constituted;The doping of the first N-type sheath, the second N-type sheath and the p-type sheath is dense Degree is all higher than the doping concentration of the P-type semiconductor substrate;The transistor is also included by gate insulation layer 30 and the source electrode 21st, the grid 40 of 22 mutually insulateds of drain electrode.

Wherein, the drain electrode 22 is simultaneously as emitter stage (Emitter), and the source electrode 21 is used as colelctor electrode simultaneously (Collector)。

Here, the operation principle of above-mentioned transistor is as shown in fig. 7, concrete principle can be found in elaboration above to Fig. 3, herein Repeat no more.

It is further preferred that the N-type semiconductor substrate 11 is included in N-type silicon substrate, N-type germanium substrate, N-type silicon-Germanium substrate It is any.

Here, the N-type semiconductor substrate 10 refers to be formed by mixing micro N-type ion in the semiconductor substrate Substrate;Wherein, N-type ion can the pentavalent anion (N such as group Ⅴ element such as phosphorus (P), arsenic (As), antimony (Sb)5-) in one kind or It is a variety of.

Semiconductor substrate directly can be made up of any of silicon substrate (Si), germanium substrate (Ge), silicon-Germanium substrate, can also By SOI substrate (Silicon-On-Insulator is formed at the silicon substrate on insulator), GOI substrates (Germanium- On-Insulator, that is, be formed at the germanium substrate on insulator), SGOI substrates (Silicon-Germanium-On- Any of Insulator, that is, be formed at the silicon-Germanium substrate on insulator), and not limited to this.

On the basis of the above, the embodiment of the present invention additionally provides a kind of drive circuit, as shown in figure 8, the drive circuit Including:

The first transistor T1, the first transistor T1 connection scanning signal Scan of grid G 1, the first transistor T1 source S 1 connects the first data-signal Data-1.

Second transistor T2, the second transistor T2 are transistor described in reference diagram 2, the second transistor T2's Grid 40 connects the drain D 1 of the first transistor T1, the connection collector voltage of drain electrode 22 Vc's of the second transistor T2 Output end, the connection output current I of source electrode 21 (out) of second transistor T2 output end, the second transistor T2's Base stage 20 connects source electrode 21 and the drain electrode 22 of the second transistor T2 respectively.

Third transistor T3, the source S 3 of the third transistor T3 connects the base stage 20 of the second transistor T2, institute State the third transistor T3 connection base voltage of drain D 3 Vb.

4th transistor T4, the 4th transistor T4 connection scanning signal Scan of grid G 4, the 4th transistor T4 source S 4 connects the second data-signal Data-2, and the drain D 4 of the 4th transistor T4 connects the third transistor T3 Grid G 3.

Further, with reference to shown in Fig. 8, the drive circuit may also include the first electric capacity C1, the first electric capacity C1's One end connects the grid 40 of the second transistor T2, other end ground connection.

Further, with reference to shown in Fig. 8, the drive circuit may also include the second electric capacity C2, the second electric capacity C2's One end connects the grid 40 of the third transistor T3, other end ground connection.

Wherein, it is to maintain and stabilize second crystalline substance respectively that the first electric capacity C1 and the second electric capacity C2 effect, which are, Body pipe T2 grid 40 and the voltage in the grid G 3 of the third transistor T3.

The embodiment of the present invention additionally provides a kind of driving method for above-mentioned drive circuit as shown in Figure 8, including:

S11, led respectively by scanning signal Scan, the first data-signal Data-1 and the second data-signal Data-2 Logical the first transistor T1 and the 4th transistor T4, by the first data-signal Data-1 and the second data-signal Data-2 It is respectively written into and is maintained at second transistor T2 grid 40 and third transistor T3 grid G 3.

S12, collector voltage Vc is write and the drain electrode 22 of the second transistor T2 is maintained at.

S13, the first data-signal Data-1 by adjusting the grid 40 for writing the second transistor T2 electricity Size, the second data-signal Data-2 of write-in third transistor T3 grid G 3 voltage swing are pressed, is controlled respectively Make the conducting electric current I (MOSFET channel) of second transistor T2 size and be input to the second transistor T2's The size of the base current of base stage 20, output current I (out) is exported by the source electrode 21 of the second transistor T2.

Wherein, the output current I (out) and the conducting electric current I (MOSFET channel), the base current Ib Default functional relation is met, i.e.,:

I (out)=I (MOSFETchannel)+(1+ β) Ib;Formula (3)

Wherein, the independent variable of the functional relation be the conducting electric current I (MOSFET channel), size and described The size of base stage Ib electric currents, dependent variable is the size of the output current I (out).

Seen from the above description, the electric current I (out) from second transistor T2 outputs is with grid voltage Vg and base current Ib change and change, i.e., by introducing Ib increase the big of output current I (out) compared with the transistor that prior art is provided It is small, it is achieved thereby that need not increase the size of transistor can improve the ability of transistor output current, counted by control first Driving light-emitting component (such as OLED element) can be just controlled according to line signal Data-1 and the second data line signal Data-2 size Total current Iout;Due to the introducing of above-mentioned I (BJT) electric current so that transistor more common output current I (out) has very big Raising, so as to significantly improve the luminous intensity of light-emitting component, strengthen display effect.

Further, the embodiment of the present invention additionally provides another drive circuit, as shown in figure 9, the drive circuit bag Include:

The first transistor T1, the first transistor T1 connection scanning signal Scan of grid G 1, the first transistor T1 source S 1 connects the first data-signal Data-1.

Second transistor T2, the second transistor T2 are transistor as shown in Figure 6, the grid of the second transistor T2 Pole 40 connects the drain D 1 of the first transistor T1, and the connection collector voltage of source electrode 21 Vc's of the second transistor T2 is defeated Go out end, the connection output current I of drain electrode 22 (out) of second transistor T2 output end, the base of the second transistor T2 Pole 20 connects source electrode 21 and drain electrode 22 respectively.

Third transistor T3, the source S 3 of the third transistor T3 connects the base stage 20 of the second transistor T2, institute State the third transistor T3 connection base voltage of drain D 3 Vb.

4th transistor T4, the 4th transistor T4 grid g4 connections scanning signal Scan, the 4th transistor T4 source S 4 connects the second data-signal Data-2, and the drain D 4 of the 4th transistor T4 connects the third transistor T3 Grid G 3.

Further, one end connection described the of the above-mentioned drive circuit also including the first electric capacity C1, the first electric capacity C1 Two-transistor T2 grid 40, other end ground connection.

Further, one end connection described the of the above-mentioned drive circuit also including the second electric capacity C2, the second electric capacity C2 Three transistor T3 grid G 3, other end ground connection.

On the basis of the above, the embodiment of the present invention additionally provides a kind of driving method for above-mentioned drive circuit, including:

S21, led respectively by scanning signal Scan, the first data-signal Data-1 and the second data-signal Data-2 Logical the first transistor T1 and the 4th transistor T4, by the first data-signal Data-1 and the second data-signal Data-2 It is respectively written into and is maintained at second transistor T2 grid 40 and third transistor T3 grid G 3.

S22, collector voltage Vc is write and the drain electrode 22 of the second transistor T2 is maintained at.

S23, the first data-signal Data-1 by adjusting the grid 40 for writing the second transistor T2 electricity Size, the second data-signal Data-2 of write-in third transistor T3 grid G 3 voltage swing are pressed, is controlled respectively Make the conducting electric current I (MOSFET channel) of second transistor T2 size and be input to the second transistor T2's The base current Ib of base stage 20 size, output current I (out) is exported by the drain electrode 22 of the second transistor T2.

Wherein, the output current I (out) and the conducting electric current I (MOSFET channel), the base current Ib Default functional relation is met, i.e.,:

I (out)=I (MOSFETchannel)+(1+ β) Ib;Formula (3)

Wherein, the independent variable of the functional relation be the conducting electric current I (MOSFET channel), size and described The size of base stage Ib electric currents, dependent variable is the size of the output current I (out).

Seen from the above description, the electric current I (out) from second transistor T2 outputs is with grid voltage Vg and base current Ib change and change, i.e., by introducing Ib increase the big of output current I (out) compared with the transistor that prior art is provided It is small, it is achieved thereby that need not increase the size of transistor can improve the ability of transistor output current, counted by control first Driving light-emitting component (such as OLED element) can be just controlled according to line signal Data-1 and the second data line signal Data-2 size Total current Iout;Due to the introducing of above-mentioned I (BJT) electric current so that transistor more common output current I (out) has very big Raising, so as to significantly improve the luminous intensity of light-emitting component, strengthen display effect.

On the basis of the above, the embodiment of the present invention additionally provides a kind of current-driven display, including above-mentioned drive Dynamic circuit.The display device may include organic electroluminescence display device and method of manufacturing same.

It should be noted that all accompanying drawings of the invention are the simple schematic diagrames of above-mentioned transistor and drive circuit, it is only Clearly describe this programme and embody the structure related to inventive point, be existing knot for other structures unrelated with inventive point Structure, in the accompanying drawings not embodiment or only realizational portion.

The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any Those familiar with the art the invention discloses technical scope in, change or replacement can be readily occurred in, should all be contained Cover within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.

Claims (12)

1. a kind of drive circuit, it is characterised in that including,
The first transistor, the grid connection scanning signal of the first transistor, the source electrode connection first of the first transistor Data-signal;
Second transistor, the second transistor includes, P-type semiconductor substrate, and the P-type semiconductor substrate includes first area And second area;Base stage on the first area, the p-type sheath that the base stage is adulterated by positive charge is constituted;It is located at Source electrode and drain electrode on the second area, the source electrode and the first N-type sheath for draining and being adulterated respectively by negative electrical charge Constituted with the second N-type sheath that negative electrical charge adulterates;The first N-type sheath, the second N-type sheath and the P The doping concentration of type sheath is all higher than the doping concentration of the P-type semiconductor substrate;Also include by gate insulation layer with it is described The grid of source electrode, the mutually insulated that drains;Wherein, the source electrode is simultaneously as emitter stage, and the drain electrode is used as colelctor electrode, institute simultaneously The grid for stating second transistor connects the drain electrode of the first transistor, the drain electrode connection collector voltage of the second transistor Output end, the source electrode of the second transistor connects the output end of output current, and the base stage of the second transistor connects respectively Connect source electrode and the drain electrode of the second transistor;
Third transistor, the source electrode of the third transistor connects the base stage of the second transistor, the third transistor Drain electrode connection base voltage;
4th transistor, the grid connection scanning signal of the 4th transistor, the source electrode connection second of the 4th transistor Data-signal, the grid of the drain electrode connection third transistor of the 4th transistor.
2. drive circuit according to claim 1, it is characterised in that the P-type semiconductor substrate includes P-type silicon substrate, P Any of type germanium substrate, P-type silicon germanium substrate.
3. drive circuit according to claim 1, it is characterised in that also include, the first electric capacity, the one of first electric capacity The grid of the end connection second transistor, the other end ground connection of first electric capacity.
4. drive circuit according to claim 1, it is characterised in that also include, the second electric capacity, the one of second electric capacity The grid of the end connection third transistor, the other end ground connection of second electric capacity.
5. a kind of driving method of drive circuit as described in any one of Claims 1-4, it is characterised in that including,
The first transistor and the 4th transistor are respectively turned on by scanning signal, the first data-signal and the second data-signal, First data-signal and second data-signal are respectively written into and the grid and the 3rd crystalline substance of second transistor is maintained at The grid of body pipe;
Collector voltage is write and the drain electrode of the second transistor is maintained at;
By the voltage swing for first data-signal for adjusting the grid for writing the second transistor, write the described 3rd The voltage swing of second data-signal of the grid of transistor, control respectively the second transistor conducting electric current it is big The size of the base current of base stage that is small and being input to the second transistor, is exported by the source electrode of the second transistor and exported Electric current;
Wherein, the output current meets default functional relation with the conducting electric current, the base current, and the function is closed The independent variable of system is the size of the conducting electric current and the size of the base current, and dependent variable is big for the output current It is small.
6. a kind of drive circuit, it is characterised in that including,
The first transistor, the grid connection scanning signal of the first transistor, the source electrode connection first of the first transistor Data-signal;
Second transistor, the second transistor includes, N-type semiconductor substrate, and the N-type semiconductor substrate includes first area And second area;Base stage on the first area, the N-type sheath that the base stage is adulterated by positive charge is constituted;It is located at Source electrode and drain electrode on the second area, the source electrode and the first p-type sheath for draining and being adulterated respectively by negative electrical charge Constituted with the second p-type sheath that negative electrical charge adulterates;The first p-type sheath, the second p-type sheath and the N The doping concentration of type sheath is all higher than the doping concentration of the N-type semiconductor substrate;Also include by gate insulation layer with it is described The grid of source electrode, the mutually insulated that drains;Wherein, the drain electrode is simultaneously as emitter stage, and the source electrode is used as colelctor electrode, institute simultaneously The grid for stating second transistor connects the drain electrode of the first transistor, the source electrode connection collector voltage of the second transistor Output end, the output end of the drain electrode connection output current of the second transistor, the base stage of the second transistor connects respectively Connect source electrode and the drain electrode of the second transistor;
Third transistor, the source electrode of the third transistor connects the base stage of the second transistor, the third transistor Drain electrode connection base voltage;
4th transistor, the grid connection scanning signal of the 4th transistor, the source electrode connection second of the 4th transistor Data-signal, the grid of the drain electrode connection third transistor of the 4th transistor.
7. drive circuit according to claim 6, it is characterised in that the N-type semiconductor substrate includes N-type silicon substrate, N Any of type germanium substrate, N-type silicon-Germanium substrate.
8. drive circuit according to claim 6, it is characterised in that also include, the first electric capacity, the one of first electric capacity The grid of the end connection second transistor, the other end ground connection of first electric capacity.
9. drive circuit according to claim 6, it is characterised in that also include, the second electric capacity, the one of second electric capacity The grid of the end connection third transistor, the other end ground connection of second electric capacity.
10. a kind of driving method of drive circuit as described in any one of claim 6 to 9, it is characterised in that including,
The first transistor and the 4th transistor are respectively turned on by scanning signal, the first data-signal and the second data-signal, First data-signal and second data-signal are respectively written into and the grid and the 3rd crystalline substance of second transistor is maintained at The grid of body pipe;
Collector voltage is write and the drain electrode of the second transistor is maintained at;
By the voltage swing for first data-signal for adjusting the grid for writing the second transistor, write the described 3rd The voltage swing of second data-signal of the grid of transistor, control respectively the second transistor conducting electric current it is big The size of the base current of base stage that is small and being input to the second transistor, is exported by the drain electrode of the second transistor and exported Electric current;
Wherein, the output current meets default functional relation with the conducting electric current, the base current, and the function is closed The independent variable of system is the size of the conducting electric current and the size of the base current, and dependent variable is big for the output current It is small.
11. a kind of display device, it is characterised in that including such as any one of Claims 1-4, or any one of claim 6 to 9 Described drive circuit.
12. display device according to claim 11, it is characterised in that the display device is aobvious including organic electroluminescent Showing device.
CN201410597286.6A 2014-10-30 2014-10-30 A kind of transistor, drive circuit and its driving method, display device CN104392995B (en)

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