CN104362145A - Packaging structure of GaN-based Schottky diode with avalanche breakdown property - Google Patents
Packaging structure of GaN-based Schottky diode with avalanche breakdown property Download PDFInfo
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- CN104362145A CN104362145A CN201410661987.1A CN201410661987A CN104362145A CN 104362145 A CN104362145 A CN 104362145A CN 201410661987 A CN201410661987 A CN 201410661987A CN 104362145 A CN104362145 A CN 104362145A
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- diode
- gan base
- schottky diode
- module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The invention discloses a packaging structure of a GaN-based Schottky diode with the avalanche breakdown property. A device comprises two GaN-based Schottky diodes and a Si-based diode, wherein the reverse nominal voltages of the two GaN-based Schottky diodes are the same, and a parallel structure is formed by directly welding the Si-based diode to the cathodes of the GaN-based Schottky diodes and connecting the anodes of the two kinds of diodes through leads. In this way, when the device works reversely, reverse voltage is fixed through the avalanche breakdown effect of the Si-based diode under the condition that the reserve voltage exceeds the reverse nominal voltage of the device, and avalanche current is generated through the avalanche breakdown effect of the Si-based diode and is fed back to a protecting circuit. In this way, the device and a whole circuit system are protected, and both the safety and the stability of the device and the circuit are improved.
Description
Technical field
The present invention relates to a kind of power electronic device manufacture and Power Electronic Circuit field, especially design a kind of encapsulating structure of the GaN base Schottky diode with avalanche breakdown characteristic.
research background
GaN base semi-conducting material, owing to having broad stopband, high electron mobility speed, high heat conductance, corrosion-resistant, the outstanding advantages such as radioresistance, has unique advantage making in high temperature, high frequency, high-power electronic device.
GaN base high voltage Schottky diode is owing to having lower conducting resistance compared to Si based diode device, higher is oppositely withstand voltage, and extremely short reverse recovery time, and than SiC based diode device, there is lower price, obtain research and development widely.
But, because Schottky diode is when reverse operation, reduces effect and tunnel penetration effect along with Schottky barrier can occur in withstand voltage rising, leakage current during device reverse operation will be made so greatly to raise.The defect concentration that GaN material is high, also can rising device reverse operation time leakage current.Due to GaN material high puncture avalanche breakdown electric field, be also difficult to reach avalanche breakdown when the reverse leakage current of device is very high.Withstand voltage far below during material generation avalanche breakdown of the reverse rated voltage of designed GaN base diode component will be made like this.
But, for Si base high-voltage diode material, due to the avalanche breakdown electric field that Si material is low, can avalanche breakdown be there is when reverse voltage exceedes device reverse rated voltage.In side circuit, when circuit is unstable, when making device working inverse voltage reach avalanche breakdown voltage higher than rated voltage, because avalanche effect makes reverse voltage on device fix.The reverse leakage current that under fixing reverse voltage, straight line rises, also can protective device in circuits for triggering, thus protects whole power electronic system.
For GaN base schottky diode device, when the reverse specified pressure of reverse voltage higher than GaN base Schottky diode, due to can not avalanche breakdown, reverse voltage can not be fixed.In the circuit of instability, the phenomenon that reverse voltage and reverse leakage current rise simultaneously can be there is.And too high reverse voltage and reverse leakage current not only can increase the power consumption of circuit, and destruction can be produced to power device self and circuit.In circuit design, lack the feedback effect of avalanche current, also can increase the design difficulty of feedback circuit.
Therefore, the reverse operation characteristic of GaN base Schottky diode needs to improve.
Summary of the invention
In view of this, object of the present invention is intended to solve conventional GaN base Schottky diode in actual applications, during reverse operation, can not fix reverse pressure drop at rated value, can not form the problem of avalanche current feedback.
To achieve these goals; by making, GaN base Schottky diode is in parallel with Si based diode is encapsulated as a module in the present invention; when reverse pressure drop overrate; by the avalanche effect of Si based diode; fixing reverse voltage; formation avalanche current feeds back, thus protection device itself and whole Circuits System, the fail safe of enhance device and circuit and stability.Its specific implementation method is as follows.
Step one: select the oppositely withstand voltage GaN base Schottky diode being greater than or equal to design reverse rated voltage.
Step 2: select reverse rated voltage to equal the Si based diode of the vertical stratification of designing requirement reverse rated voltage.
Step 3: by GaN base Schottky diode substrate bond on the insulated substrate of encapsulating material
Step 4: the negative electrode of Si based diode is welded direct on the negative electrode of GaN base diode
Step 5: the anode of Si based diode is connected by the anode of metal lead wire with GaN base Schottky diode.
Step 6: anode and the negative electrode of being drawn whole module by lead-in wire.
The GaN base Schottky diode that wherein step one adopts can be GaN body material Schottky diode also can be AlGaN/GaN HEMTs Schottky diode.
The Si based diode wherein adopted in step 2 can be the Si based diode device of the various vertical stratification such as Schottky junction structure, PiN structure.
Wherein, when the reverse rated voltage of single Si based diode can not reach the reverse rated voltage of designing requirement, Si based diode described in step 2 also can be two or more Si based diodes mutually connect formed module, its total nominal voltage equals the reverse rated voltage of designing requirement.
Wherein, when the forward rated current of single GaN base Schottky diode can not reach the requirement of the device forward rated current of designing requirement, the GaN base diode described in step one also can by the parallel module of two or more GaN base schottky diode device formation parallel with one another.Its method for packing to be welded on the multiple GaN base schottky diode device on packaging insulating substrate, is pulled through metal lead wire parallel connection, forms parallel module.The Si based diode identical with GaN base Schottky diode reverse rated voltage or vertical series being welded the Si based diode module formed is welded on the negative electrode of one of them GaN base diode, is connected by the anode of the anode of GaN base Schottky diode with Si based diode or Si based diode module by metal lead wire.
Wherein, when the reverse rated voltage of single GaN base Schottky diode can not reach the device reverse rated voltage of designing requirement.GaN base diode described in step one also two or more GaN base schottky diode device can be connected mutually formed serial module structure.Its method for packing to be welded on the multiple GaN base schottky diode device on packaging insulating substrate, is pulled through metal lead wire series connection, forms serial module structure.The Si based diode identical with GaN base Schottky diode reverse rated voltage or vertical series being welded the Si based diode module formed is welded on the cathode site of GaN base Diode series module, is connected by the anode of the anode of GaN base Schottky diode with Si based diode or Si based diode module by metal lead wire.
Accompanying drawing explanation
Accompanying drawing 1 is by a GaN base Schottky diode and a Si based diode structural representation being encapsulated as a module in parallel.
Accompanying drawing 2 is by two GaN base Schottky diodes and a Si based diode structural representation being encapsulated as a module in parallel
The structural representation of accompanying drawing 3 to be the Si based diode module package of being welded with a vertical series by a GaN base Schottky diode a be module.
Accompanying drawing 4 is the structural representation of a module by series connection GaN base Schottky diode and Si based diode module package.
Embodiment
Apply Si based diode in the present invention in parallel with GaN base Schottky diode and be encapsulated as module, make use of Si based diode avalanche breakdown effect, fixing reverse pressure drop, form avalanche current feedback, thus protect device and circuit.GaN base Schottky diode is made to be provided with avalanche breakdown characteristic.
For further illustrating characteristic sum technical scheme of the present invention, below in conjunction with the description of accompanying drawing by specific embodiment, further describe structure of the present invention, advantage and performance.
Embodiment one
As shown in Figure 1, by the substrate bond of GaN base Schottky diode 2 on insulated substrate 1, by the mode of metal solder by the cathode weld of the Si based diode 3 of vertical stratification on the negative electrode 7 of GaN base Schottky diode.By metal lead wire 4, the anode 8 of GaN base diode is connected with the anode 9 of Si based diode.Anode 5 and the negative electrode 6 of whole package module is drawn respectively by metal lead wire.
Embodiment two
In order to reach the demand of package module forward current, also can by parallel with one another for n GaN base Schottky diode, and by Si based diode in the cathode weld of one of them.
As shown in Figure 2, by the substrate bond of two GaN base Schottky diodes 2 on substrate 1, by the mode of metal solder by the cathode weld of the Si based diode 3 of vertical stratification on the negative electrode 7 of one of them GaN base Schottky diode.By metal lead wire 4, the anode 8 of GaN base diode is connected with the anode 9 of Si based diode.Anode 5 and the negative electrode 6 of whole package module is drawn respectively by metal lead wire.
Embodiment three
If the reverse rated voltage of single Si based diode can not reach two-stage identical with GaN base Schottky diode, also n Si based diode can be connected mutually, and vertical welding is module.Si based diode module is welded on the negative electrode of GaN base Schottky diode.
As shown in Figure 3, by the substrate bond of GaN base Schottky diode 2 on substrate 1, by the mode of metal solder by the cathode weld of the Si based diode 3 of vertical stratification on the negative electrode 7 of GaN base Schottky diode.By metal lead wire 4, the anode 8 of GaN base diode is connected with the anode 9 of Si based diode.Anode 5 and the negative electrode 6 of whole package module is drawn respectively by metal lead wire.
Embodiment four
If the reverse rated voltage of single GaN base Schottky diode can not reach design requirement, also n GaN base Schottky diode can be connected mutually, select the Si based diode that identical with the total reverse rated voltage of series connection GaN base Schottky diode module, it is welded on the GaN base diode of series connection GaN base Schottky diode module cathode site.The anode of the anode of Si based diode with series connection GaN base Schottky diode being connected by going between, being encapsulated as module
As shown in Figure 4, by the substrate bond of 2 GaN base Schottky diodes 2 on base plate for packaging 1,10 two GaN base Schottky diodes to be connected mutually by going between, by the mode of metal solder by the cathode weld of the Si based diode 3 of vertical stratification on the negative electrode 7 of series connection GaN base Schottky diode module.By metal lead wire 4, the anode 8 of GaN base Schottky diode module is connected with the anode 9 of Si based diode.Anode 5 and the negative electrode 6 of whole package module is drawn respectively by metal lead wire.
By reference to the accompanying drawings embodiment of the present invention is elaborated above, but the invention is not restricted to above-mentioned embodiment, in the ken that those of ordinary skill in the art possess, can also make a variety of changes under the prerequisite not departing from present inventive concept.
Claims (7)
1. the encapsulating structure of the GaN base Schottky diode with avalanche breakdown characteristic, comprise the oppositely withstand voltage GaN base Schottky diode being greater than or equal to design reverse rated voltage, reverse rated voltage equals the Si based diode of the vertical stratification of designing requirement reverse rated voltage, described GaN base Schottky diode substrate bond is on the insulated substrate of encapsulating material
The negative electrode of described Si based diode is welded direct on the negative electrode of GaN base diode, and the anode of described Si based diode is connected by the anode of metal lead wire with GaN base Schottky diode, is drawn anode and the negative electrode of whole module by lead-in wire.
2. an encapsulating structure for the GaN base Schottky diode with avalanche breakdown characteristic, is characterized in that wherein said GaN base Schottky diode can be GaN body material Schottky diode also can be AlGaN/GaN HEMTs Schottky diode.
3. an encapsulating structure for the GaN base Schottky diode with avalanche breakdown characteristic, is characterized in that wherein said Si based diode can be the Si based diode device of the various vertical stratification such as Schottky junction structure, PiN structure.
4. the encapsulating structure of the GaN base Schottky diode with avalanche breakdown characteristic, it is characterized in that wherein, when the reverse rated voltage of single Si based diode can not reach the reverse rated voltage of designing requirement, described Si based diode also can be two or more Si based diodes mutually connect formed module, its total nominal voltage equals the reverse rated voltage of designing requirement.
5. the encapsulating structure of the GaN base Schottky diode with avalanche breakdown characteristic, it is characterized in that, when the forward rated current of single GaN base Schottky diode can not reach the requirement of the device forward rated current of designing requirement, described GaN base diode also can by the parallel module of two or more GaN base schottky diode device formation parallel with one another;
Its method for packing to be welded on the multiple GaN base schottky diode device on packaging insulating substrate, is pulled through metal lead wire parallel connection, forms parallel module; The Si based diode identical with GaN base Schottky diode reverse rated voltage or vertical series being welded the Si based diode module formed is welded on the negative electrode of one of them GaN base diode, is connected by the anode of the anode of GaN base Schottky diode with Si based diode or Si based diode module by metal lead wire.
6. the encapsulating structure of the GaN base Schottky diode with avalanche breakdown characteristic, it is characterized in that, when the reverse rated voltage of single GaN base Schottky diode can not reach the device reverse rated voltage of designing requirement, described GaN base diode also two or more GaN base schottky diode device can be connected mutually formed serial module structure;
Its method for packing to be welded on the multiple GaN base schottky diode device on packaging insulating substrate, is pulled through metal lead wire series connection, forms serial module structure; The Si based diode identical with GaN base Schottky diode reverse rated voltage or vertical series being welded the Si based diode module formed is welded on the cathode site of GaN base Diode series module, is connected by the anode of the anode of GaN base Schottky diode with Si based diode or Si based diode module by metal lead wire.
7. an encapsulating structure for the GaN base Schottky diode with avalanche breakdown characteristic, is characterized in that wherein adopted encapsulating structure can be the various packing forms such as TO220, DBC module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410661987.1A CN104362145A (en) | 2014-11-19 | 2014-11-19 | Packaging structure of GaN-based Schottky diode with avalanche breakdown property |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410661987.1A CN104362145A (en) | 2014-11-19 | 2014-11-19 | Packaging structure of GaN-based Schottky diode with avalanche breakdown property |
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| CN104362145A true CN104362145A (en) | 2015-02-18 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021047638A1 (en) * | 2019-09-12 | 2021-03-18 | 华为技术有限公司 | Discrete diode device, circuit having bypass function, and converter |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20100301396A1 (en) * | 2009-05-28 | 2010-12-02 | International Rectifier Corporation | Monolithic Vertically Integrated Composite Group III-V and Group IV Semiconductor Device and Method for Fabricating same |
| CN103107151A (en) * | 2011-11-11 | 2013-05-15 | 万国半导体股份有限公司 | Termination structure for gallium nitride Schottky diode |
| CN103890923A (en) * | 2011-10-31 | 2014-06-25 | 株式会社电装 | Semiconductor device and method for manufacturing same |
| CN204946897U (en) * | 2014-11-19 | 2016-01-06 | 佛山芯光半导体有限公司 | A kind of encapsulating structure of the GaN base Schottky diode with avalanche breakdown characteristic |
-
2014
- 2014-11-19 CN CN201410661987.1A patent/CN104362145A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100301396A1 (en) * | 2009-05-28 | 2010-12-02 | International Rectifier Corporation | Monolithic Vertically Integrated Composite Group III-V and Group IV Semiconductor Device and Method for Fabricating same |
| CN103890923A (en) * | 2011-10-31 | 2014-06-25 | 株式会社电装 | Semiconductor device and method for manufacturing same |
| CN103107151A (en) * | 2011-11-11 | 2013-05-15 | 万国半导体股份有限公司 | Termination structure for gallium nitride Schottky diode |
| CN204946897U (en) * | 2014-11-19 | 2016-01-06 | 佛山芯光半导体有限公司 | A kind of encapsulating structure of the GaN base Schottky diode with avalanche breakdown characteristic |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021047638A1 (en) * | 2019-09-12 | 2021-03-18 | 华为技术有限公司 | Discrete diode device, circuit having bypass function, and converter |
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Application publication date: 20150218 |