CN104348082A - TEC (Thermo Electric Cooler) starting circuit of electro-absorption modulated laser - Google Patents
TEC (Thermo Electric Cooler) starting circuit of electro-absorption modulated laser Download PDFInfo
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- CN104348082A CN104348082A CN201310343841.8A CN201310343841A CN104348082A CN 104348082 A CN104348082 A CN 104348082A CN 201310343841 A CN201310343841 A CN 201310343841A CN 104348082 A CN104348082 A CN 104348082A
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Abstract
The invention provides a TEC (Thermo Electric Cooler) starting circuit of an electro-absorption modulated laser. The TEC starting circuit comprises a power circuit, a TEC control circuit, a laser integrating a TEC and a thermistor NTC (Negative Temperature Coefficient), a TEC closed loop feedback circuit, a current buffer circuit, a P-MOS (P-Metal Oxide Semiconductor) transistor, a first capacitor, a second capacitor and a fifth resistor, wherein the current buffer circuit is positioned between an output end of the power circuit and a power input end of the TEC control circuit; a source electrode S of the P-MOS transistor is connected with the output end of the power circuit and one end of the first capacitor, and the other end of the capacitor is connected with a gate electrode G of the P-MOS transistor and is grounded through the fifth resistor; a drain electrode D of the P-MOS transistor is connected with a current input end of the TEC control circuit and is meanwhile grounded through the second capacitor. Since the current buffer circuit consisting of the P-MOS transistor, the first capacitor, the second capacitor and the fifth resistor is low in component cost, the influence of surge current caused by the TEC control circuit on the electro-absorption modulated laser can be suppressed better, and the working stability of the laser is improved.
Description
Technical field
The present invention relates to a kind of Electroabsorption Modulated Laser EML (Electro-absorption Modulated Laser), particularly relate to a kind of TEC start-up circuit of Electroabsorption Modulated Laser.
Background technology
In the long range propagation of SFP+ (Enhanced Small Form Factor Pluggable Module), XFP (10 Gigabit Small Form Factor Pluggable Module) module, need to use Electroabsorption Modulated Laser to meet long range propagation performance.Fluctuation due to the output wavelength of EML laser, current threshold, peak power output and minimum power all can be subject to the working temperature impact of laser, so EML laser inside is all integrated with the thermistor NTC (Negative Temperature Coefficient) of a thermoelectric refrigerating unit TEC (Thermo Electric Cooler) and a high accuracy negative temperature coefficient, ensure that laser works is on stable working temperature point by closed feedback loop circuit, thus ensure the transmission performance of laser.The TEC start-up circuit of Electroabsorption Modulated Laser as shown in Figure 1, comprise laser 30, the TEC closed-loop feedback circuit 40 that power circuit 10, TEC control circuit 20, is integrated with a TEC and a thermistor NTC, wherein, TEC control circuit 20, comprise: first and second DC-DC circuit 21,22, two circuit shunts are connected with TEC-and TEC+ two pins of integrated thermal electric refrigerator TEC31 in laser 30 through first, second filter circuit filtering output end.Its operation principle: power circuit 10 provides the operating voltage of 3.3V for TEC control circuit 20, first and second DC-DC circuit 21,22 TEC-and TEC+ two pins respectively for the thermoelectric refrigerating unit TEC31 in laser 30 after first, second filter circuit filtering provide different voltage respectively, make thermoelectric refrigerating unit TEC produce forward or reverse electric current, thermoelectric refrigerating unit TEC31 is that laser 30 heats or freezes according to the sense of current again.When the working temperature of laser 30 is higher, the resistance of the NTC resistance 32 of laser 30 inside will diminish, TEC closed-loop feedback circuit 40 provides a voltage to become large signal to the closed control circuit 23 of TEC control circuit 20 inside thus, this circuit makes the voltage of voltage ratio first DC-DC circuit 21 of the second DC-DC circuit 22 high, the sense of current of the inner TEC of flowing through laser 30 is made to flow to TEC-by TEC+, the TEC31 of the inside of laser 30 can force the working temperature of laser 30 to decline, and keeps the working temperature of laser 30 to stablize.Otherwise, when the working temperature of laser 30 is on the low side, the resistance of the NTC resistance 32 of laser 30 inside will become large, so the signal that TEC closed-loop feedback circuit 40 provides a voltage to diminish is to the closed control circuit 23 of TEC control circuit 20 inside, the closed control circuit 23 of TEC control circuit 20 inside makes the voltage of voltage ratio first DC-DC circuit 21 of the second DC-DC circuit 22 of TEC control circuit 20 inside low, the sense of current of the inner TEC31 of flowing through laser 30 is made to flow to TEC+ by TEC-, the TEC31 of the inside of laser 30 can force the working temperature of laser 30 to raise, the working temperature of laser 30 is kept to stablize.
The reference power source V_Ref of TEC control circuit 20 inside is through resistance R1, resistance R2 and resistance R3, resistance R4 dividing potential drop respectively; output current-limiting circuit 24 and the output of limiting voltage circuit 25 of TEC control circuit 20 inside is supplied to respectively after dividing potential drop; for setting maximum output current and the maximum output voltage of TEC control circuit 20; the current detection circuit of TEC control circuit 20 inside and voltage monitoring circuit ensure to make the TEC31 of laser 30 inside be operated in safe voltage and current, to protect the TEC31 of laser 30 inside not damaged.
Because the first DC-DC circuit 21 of TEC control circuit 20 inside and the second DC-DC circuit 22 are the direct-current switch power supply circuit belonging to hard switching, and load is again the TEC31 that D.C. resistance only has several ohm, and these circuit of inside also need some times to setting up a stable state from power on, such powered on moment is carried on the TEC31 of laser 30 inside with regard to there being the larger voltage difference of generation one, and the DC resistance of TEC31 is smaller, so the electric current flowed through on TEC31 will increase a lot instantaneously, module is caused to produce very large surge current when powered on moment, serious in the requirement of SFP+ and XFP module performance.At present, generally adopt high-performance TEC control circuit 20 chip in the industry---U.S. of u s company letter MAX8520/MAX8521 chip, by taking the artificial settings of the output current circuit 24 of TEC control circuit 20 inside and output of limiting voltage circuit 25 are all diminished, the output voltage of TEC control circuit 20 and electric current are all reduced, still can not the surge current that produces of suppression module powered on moment.
Summary of the invention
For overcoming above shortcoming, the invention provides a kind of TEC start-up circuit that effectively can suppress the Electroabsorption Modulated Laser of starting current surge.
For reaching above goal of the invention, the invention provides a kind of TEC start-up circuit of Electroabsorption Modulated Laser, comprise: a power circuit, one TEC control circuit, one laser being integrated with a TEC and a thermistor NTC, one TEC closed-loop feedback circuit, a current buffering circuit is also provided with between described power circuit output end and the power input of TEC control circuit, this circuit comprises: a P-MOS pipe, first electric capacity, second electric capacity and one the 5th resistance, described P-MOS pipe source S is connected with the output of power circuit and one end of the first electric capacity, this electric capacity other end is connected with P-MOS tube grid G and passes through the 5th grounding through resistance, the drain D of described P-MOS pipe is connected with the power input of TEC control circuit, simultaneously by the second capacity earth.
Value 0.1uF ~ the 4.7uF of described first electric capacity.
Value 10uF ~ the 47uF of described second electric capacity.
Value 510K Ω ~ 2000K Ω of described 5th resistance.
Described power circuit value 3.3V.
In the TEC start-up circuit of above-mentioned Electroabsorption Modulated Laser, managed by P-MOS owing to increasing between power circuit output end and the power input of TEC control circuit, the current buffering circuit of the first electric capacity, the second electric capacity and the 5th resistance composition, components and parts cost is low, the impact that the surge current that TEC control circuit can be suppressed preferably to cause produces Electroabsorption Modulated Laser, improves the job stability of laser.
Accompanying drawing explanation
Fig. 1 represents the TEC start-up circuit schematic diagram of prior art Electroabsorption Modulated Laser;
Fig. 2 represents the TEC start-up circuit schematic diagram of Electroabsorption Modulated Laser of the present invention.
Embodiment
Preferred embodiment is described in detail below in conjunction with accompanying drawing.
The TEC start-up circuit of Electroabsorption Modulated Laser as shown in Figure 2, comprise: a power circuit 10, one TEC control circuit 20, one laser 30 being integrated with a TEC31 and a thermistor NTC32, one TEC closed-loop feedback circuit 40, a current buffering circuit 50 is also provided with between power circuit 10 output and the power input of TEC control circuit 20, this circuit comprises: a P-MOS pipe 51, first electric capacity C1, second electric capacity C2 and the 5th resistance R5, P-MOS pipe 51 source S is connected with the output of power circuit 10 and one end of the first electric capacity C1, this electric capacity C1 other end is connected with P-MOS pipe 51 grid G and passes through the 5th resistance R5 ground connection, the drain D of P-MOS pipe 51 is connected with the power input of TEC control circuit 20, simultaneously by the second electric capacity C2 ground connection.Wherein, the value 0.1uF ~ 4.7uF of the first electric capacity C1; Value 10uF ~ the 47uF of the second electric capacity C2; Value 510K Ω ~ 2000K Ω of the 5th resistance R5; Power circuit 10 value 3.3V.When external power source is after the power circuit 10 of module, the opening of the differential circuit control P-MOS pipe 51 that the first electric capacity C1 of voltage through current buffering circuit 50 inside exported and the 5th resistance R5 forms, the initial condition just powered on is due to the first electric capacity C1, the differential circuit that 5th resistance R5 forms, the one end be connected with P-MOS pipe 51 grid G at the 5th resistance R5 can produce a peaking voltage, this peaking voltage by supply voltage along with the voltage at the first electric capacity C1 two ends be full of gradually and the impedance of the first electric capacity C1 is become very large time, the voltage formed in the place that the 5th resistance R5 is connected with P-MOS pipe 51 grid G will be more and more less, close to earthy voltage, the change procedure of this voltage can make P-MOS pipe 51 be changed to conducting state slowly from off state, until P-MOS pipe 51 conducting completely.P-MOS pipe 51 is in the process of conducting, conducting resistance gradually from large to small, the conducting resistance of P-MOS pipe 51 and the second electric capacity C2 form a variable RC filter circuit, the supply voltage on TEC control circuit 20 is made slowly to increase, the operating state of TEC control circuit 20 internal circuit is progressively tending towards stable state, because voltage slowly rises, even if TEC control circuit 20 internal circuit does not also tend towards stability, its output amplitude due to voltage compare low, large output amplitude is there will not be to cause very large surge current to produce, fundamentally well overcome the surge current that TEC control circuit 20 powered on moment exports larger amplitude of variation.
In the TEC start-up circuit of above-mentioned Electroabsorption Modulated Laser, owing to increasing by P-MOS pipe 51 between power circuit output end and the power input of TEC control circuit 20, the current buffering circuit of the first electric capacity C1, the second electric capacity C2 and the 5th resistance R5 composition, components and parts cost is low, the impact that the surge current that TEC control circuit can be suppressed preferably to cause produces Electroabsorption Modulated Laser, improves the job stability of laser.
Claims (5)
1. the TEC start-up circuit of an Electroabsorption Modulated Laser, comprise: a power circuit (10), one TEC control circuit (20), one is integrated with a TEC(31) and a thermistor NTC(32) laser (30), one TEC closed-loop feedback circuit (40), it is characterized in that, a current buffering circuit (50) is also provided with between the power input being positioned at described power circuit (10) output and TEC control circuit (20), this circuit comprises: P-MOS pipe (51), first electric capacity (C1), second electric capacity (C2) and one the 5th resistance (R5), described P-MOS manages (51) source S and is connected with the output of power circuit (10) and one end of the first electric capacity (C1), this electric capacity (C1) other end is managed (51) grid G and is connected and passes through the 5th resistance (R5) ground connection with P-MOS, the drain D of described P-MOS pipe (51) is connected with the power input of TEC control circuit (20), simultaneously by the second electric capacity (C2) ground connection.
2. the TEC start-up circuit of Electroabsorption Modulated Laser according to claim 1, is characterized in that, the value 0.1uF ~ 4.7uF of described first electric capacity (C1).
3. the TEC start-up circuit of Electroabsorption Modulated Laser according to claim 2, is characterized in that, the value 10uF ~ 47uF of described second electric capacity (C2).
4. the TEC start-up circuit of Electroabsorption Modulated Laser according to claim 3, is characterized in that, value 510K Ω ~ 2000K Ω of described 5th resistance (R5).
5. the TEC start-up circuit of Electroabsorption Modulated Laser according to claim 4, is characterized in that, described power circuit (10) value 3.3V.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310343841.8A CN104348082A (en) | 2013-08-08 | 2013-08-08 | TEC (Thermo Electric Cooler) starting circuit of electro-absorption modulated laser |
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CN201310343841.8A CN104348082A (en) | 2013-08-08 | 2013-08-08 | TEC (Thermo Electric Cooler) starting circuit of electro-absorption modulated laser |
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Citations (7)
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US20040042069A1 (en) * | 2002-08-28 | 2004-03-04 | Aaron Fisher | Placing a semiconductor laser electrically in series with a semiconductor optical amplifier |
JP2008085179A (en) * | 2006-09-28 | 2008-04-10 | Sumitomo Electric Ind Ltd | Laser diode controller, and driving method of atc circuit |
CN201066762Y (en) * | 2007-06-19 | 2008-05-28 | 深圳新飞通光电子技术有限公司 | Laser driving circuit |
CN201499153U (en) * | 2009-08-27 | 2010-06-02 | 青岛海信宽带多媒体技术有限公司 | Slow start circuit and optical module comprising same |
CN202333436U (en) * | 2011-11-29 | 2012-07-11 | 深圳新飞通光电子技术有限公司 | Laser thermoelectric cooler (TEC) driving circuit |
CN103166208A (en) * | 2011-12-13 | 2013-06-19 | 联芯科技有限公司 | Power supplying circuit capable of hindering surge currents |
CN203415816U (en) * | 2013-08-08 | 2014-01-29 | 深圳新飞通光电子技术有限公司 | TEC startup circuit of electro absorption modulated laser |
-
2013
- 2013-08-08 CN CN201310343841.8A patent/CN104348082A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040042069A1 (en) * | 2002-08-28 | 2004-03-04 | Aaron Fisher | Placing a semiconductor laser electrically in series with a semiconductor optical amplifier |
JP2008085179A (en) * | 2006-09-28 | 2008-04-10 | Sumitomo Electric Ind Ltd | Laser diode controller, and driving method of atc circuit |
CN201066762Y (en) * | 2007-06-19 | 2008-05-28 | 深圳新飞通光电子技术有限公司 | Laser driving circuit |
CN201499153U (en) * | 2009-08-27 | 2010-06-02 | 青岛海信宽带多媒体技术有限公司 | Slow start circuit and optical module comprising same |
CN202333436U (en) * | 2011-11-29 | 2012-07-11 | 深圳新飞通光电子技术有限公司 | Laser thermoelectric cooler (TEC) driving circuit |
CN103166208A (en) * | 2011-12-13 | 2013-06-19 | 联芯科技有限公司 | Power supplying circuit capable of hindering surge currents |
CN203415816U (en) * | 2013-08-08 | 2014-01-29 | 深圳新飞通光电子技术有限公司 | TEC startup circuit of electro absorption modulated laser |
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Application publication date: 20150211 |