CN104347416B - Fin formula field effect transistor and forming method thereof - Google Patents

Fin formula field effect transistor and forming method thereof Download PDF

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Publication number
CN104347416B
CN104347416B CN201310338358.0A CN201310338358A CN104347416B CN 104347416 B CN104347416 B CN 104347416B CN 201310338358 A CN201310338358 A CN 201310338358A CN 104347416 B CN104347416 B CN 104347416B
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fin
oxidation
material layer
effect transistor
formed
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CN201310338358.0A
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CN104347416A (en
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张海洋
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中芯国际集成电路制造(上海)有限公司
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Abstract

A kind of fin formula field effect transistor and forming method thereof, wherein the fin formula field effect transistor includes:Substrate;Oxidation fin in the substrate;The second fin on the oxidation fin, the width of second fin are more than the width of the oxidation fin;Grid oxide layer positioned at the surface of second fin exposure;Across the oxidation fin and the grid of the second fin.The relative area of the grid of fin formula field effect transistor provided by the invention and the second fin is big, the thickness of small power consumption and grid oxide layer is homogeneous.

Description

Fin formula field effect transistor and forming method thereof

Technical field

The present invention relates to semiconductor applications, are related specifically to a kind of fin formula field effect transistor and forming method thereof.

Background technology

With the development of semiconductor technology, the critical size of semiconductor devices reduces constantly.When the crucial chi of device It is very little when persistently reducing, conventional MOS field-effect transistors can because critical size is too small and the shortcomings of cause short-channel effect.Fin Formula field-effect transistor(FinFET)Due to larger channel region;And grid is relative with the upper surface of fin and two side, The relative area of grid and fin is increased, grid can control the channel region formed in fin well, can effectively overcome short Channelling effect and be widely used.

In the prior art, the forming method of fin formula field effect transistor includes:

With reference to figure 1, there is provided substrate 10.

With reference to figure 2, fin 11 is formed in the substrate 10.

The method for forming the fin 11 is:Patterned mask layer is formed in the substrate 10, it is described patterned Mask layer defines the position of fin;Then using the patterned mask layer as mask, the substrate 10 of etched portions thickness, Fin 11 is formed, and removes the patterned mask layer.

After forming fin 11, using sedimentation, gate dielectric layer is formed on the fin 11 and substrate 10(It is not shown).

With reference to figure 3, grid 20 is formed on the gate dielectric layer, the grid 20 is across the fin 11.

After forming grid 20, in addition to form source electrode and drain electrode(It is not shown).

When the critical size of fin formula field effect transistor persistently reduces, the fin field effect crystal that is formed by the above method Pipe has the disadvantage that:

First, the relative area of grid 20 and fin 11 is still smaller, and grid 20 can not control shape in fin 11 well Into channel region.

Second, power consumption is big.The channel region increase formed in fin 11, the driving electricity of fin formula field effect transistor can be improved Stream, but after driving current increases to certain value, the power consumption of the fin formula field effect transistor can be increased on the contrary;Source electrode and drain electrode Between electric current can further increase the power consumption of the fin formula field effect transistor by substrate 10 and mutual conduction.

3rd, with the reduction of the width of fin 11, the gate medium formed using sedimentation in the upper surface of fin 11 and side wall The uneven thickness one of layer.

The content of the invention

The present invention solve the problems, such as be in the prior art, the grid of fin formula field effect transistor and the relative area of fin compared with Small, power consumption is big and the uneven thickness one of gate dielectric layer.

To solve the above problems, the present invention provides a kind of forming method of fin formula field effect transistor, including:Base is provided Bottom;Sequentially form the first fin and the second fin from the bottom to top on the substrate, the width of the first fin is less than the second fin Width;Aoxidize first fin and form oxidation fin;The surface of the second fin exposure is aoxidized, in second fin Exposed surface forms grid oxide layer;After forming oxidation fin and grid oxide layer, the oxidation fin and the second fin are developed across Grid.

Optionally, forming the first fin and the method for the second fin includes:The first fin material is formed on the substrate Layer, forms the second fin material layer in the first fin material layer;Formed graphically in the second fin material layer upper surface Mask layer;Using the patterned mask layer as mask, the second fin material layer and the first fin material layer, shape are etched Into the fin of width identical second and the first fin;First fin described in lateral etching part, is less than the width of the first fin The width of second fin.

Optionally, the material of first fin is silicon, and the material of second fin is SiGe, lateral etching part institute The method for stating the first fin is:Use CF4、O2And N2Plasma to first fin carry out plasma etching;Or Person, use HNO3Wet etching is carried out to first fin with the HF aqueous solution.

Optionally, the material of first fin is SiGe, and the material of second fin is silicon, lateral etching part institute The method for stating the first fin is:Use CF4Plasma to first fin carry out plasma etching;Or use The HCl aqueous solution carries out wet etching to first fin.

Optionally, forming the method for the first fin material layer includes:Using sedimentation or epitaxial growth method, in the substrate The first fin material layer of upper formation.

Optionally, forming the method for the second fin material layer includes:Using sedimentation or epitaxial growth method, described first The second fin material layer is formed in fin material layer.

Optionally, in addition to:During the first fin material layer is formed, using original position doping to the first fin material Layer carries out first kind doping;Or after forming the first fin material layer, before forming the second fin material layer, to described first Fin material layer carries out first kind doping.

Optionally, in addition to:During the second fin material layer is formed, adulterated using original position, to the second fin material layer Second Type doping is carried out, Second Type is identical with the first kind, and the concentration of Second Type doping is adulterated less than the first kind Concentration;Or formed the second fin material layer after, to the second fin material layer carry out Second Type doping, Second Type with The first kind is identical, and the concentration of Second Type doping is less than the concentration of first kind doping.

Optionally, also include before forming the grid:Side wall, the height of the side wall are formed in the first fin side wall Less than or equal to the height of first fin.

The present invention also provides a kind of fin formula field effect transistor, including:Substrate;Oxidation fin in the substrate; The second fin on the oxidation fin, the width of second fin are more than the width of the oxidation fin;Positioned at institute State the grid oxide layer on the surface of the second fin exposure;Across the oxidation fin and the grid of the second fin.

Optionally, the material of the oxidation fin is silica, germanium oxide or silicon germanium oxide.

Optionally, the material of second fin is germanium, SiGe or silicon.

Optionally, oxidation fin has a first kind doping, and the second fin has a Second Type doping, Second Type and the One type is identical, and the concentration of Second Type doping is less than the concentration of first kind doping.

Optionally, in addition to:Positioned at the side wall of the oxidation fin side wall, the height of the side wall is less than or equal to described Aoxidize the height of fin.

Compared with prior art, technical scheme has advantages below:

Fin formula field effect transistor includes oxidation fin and the second fin on the oxidation fin, and the oxidation The width of fin is less than the width of second fin, and the fin formula field effect transistor at least has advantages below:

First, the relative area of grid and the second fin is improved.In the prior art, the surface of fin exposure only has fin The upper surface and two side in portion.In the technical program, the width due to aoxidizing fin is less than the width of the second fin, so described The surface of second fin exposure not only includes the upper surface and two side of the second fin, in addition to not by the oxidation fin covering Lower surface, the surface area increase of second fin exposure.After forming grid, because grid by the oxidation fin with not covered Also there are relative area, the relative area increase of grid and the second fin in the lower surface of second fin of lid, and grid can be controlled well Make the channel region formed in the second fin.

Second, small power consumption.Fin formula field effect transistor can be by adjusting the height of the second fin, and then adjusts the fin The driving current of formula field-effect transistor, it is a preferred values to make the driving current, and the fin field effect can either be kept brilliant The preferable working condition of body pipe, the power consumption of the fin formula field effect transistor will not again increased;Moreover, the oxidation fin makes Second fin is spaced from each other with the substrate, prevents the electric current between source electrode and drain electrode to be turned on by the substrate, is dropped The low power consumption of the fin formula field effect transistor.

3rd, the technical program is using the surface for aoxidizing the second fin exposure, in the table of second fin exposure Face forms grid oxide layer, and the thickness of grid oxide layer is homogeneous.

Brief description of the drawings

Fig. 1 to Fig. 3 is that the stereochemical structure for each production phase for preparing fin formula field effect transistor method in the prior art is shown It is intended to;

Fig. 4 to Figure 11 be prepared in first embodiment of the invention fin formula field effect transistor method each production phase it is vertical Body structural representation;

Figure 12 is the three-dimensional knot for each production phase that fin formula field effect transistor method is prepared in second embodiment of the invention Structure schematic diagram.

Embodiment

It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention Specific embodiment be described in detail.

First embodiment

The present embodiment provides a kind of forming method of fin formula field effect transistor, and this method includes:

With reference to figure 4, there is provided substrate 110.

In a particular embodiment, the material of the substrate 110 can be silicon, germanium, SiGe, silicon-on-insulator(silicon On insulator, abbreviation SOI)Deng the semi-conducting material of routine.

Then, oxidation fin and the second fin are sequentially formed from the bottom to top in the substrate 110.

Forming the method for the oxidation fin and the second fin includes:

With reference to figure 5, the first fin material layer 120 is formed in the substrate 110 using sedimentation or epitaxial growth method.

In a particular embodiment, the material of the first fin material layer 120 is silicon.

In a particular embodiment, during the first fin material layer 120 is formed, using original position doping to first fin Material layer 120 carries out first kind doping;Or after forming the first fin material layer 120, to the first fin material layer 120 carry out first kind doping.

With reference to figure 6, the second fin material is formed in the first fin material layer 120 using sedimentation or epitaxial growth method The bed of material 130.

In a particular embodiment, the material of the second fin material layer 130 is SiGe.The channel region formed due to SiGe The electron transfer rate of the channel region formed than silicon is big, after forming the second fin by the second fin material layer 130, described the Two fins can form channel region at work, and the electron transfer rate in channel region can increase, and can reduce fin field effect crystalline substance The power consumption of body pipe.

In a particular embodiment, during the second fin material layer 130 is formed, adulterated using original position, to the second fin material The bed of material 130 carries out Second Type doping, and Second Type is identical with the first kind, and the concentration of Second Type doping is less than the first kind The concentration of type doping;Or after forming the second fin material layer 130, Second Type is carried out to the second fin material layer 130 and mixed Miscellaneous, Second Type is identical with the first kind, and the concentration of Second Type doping is less than the concentration of first kind doping.

After forming oxidation fin by the first fin material layer 120, if oxidation fin is not fully oxidized, and in institute State the side wall of oxidation fin and do not form side wall, the voltage being applied on grid may make to form transoid in the oxidation fin Layer.The inversion layer formed in the oxidation fin can increase the driving current of fin formula field effect transistor, if the driving Electric current is excessive, can improve the power consumption of the fin formula field effect transistor.

Secondly, if forming inversion layer in the oxidation fin, the inversion layer can cause that the substrate can not be effectively spaced apart 110 and second fin, it is difficult to effectively prevent the electric current between source electrode and drain electrode from being turned on by the substrate 110, can increase The power consumption of the fin formula field effect transistor.

Because the threshold voltage of fin formula field effect transistor is relevant with the impurity concentration adulterated in fin, the impurity in fin Concentration is higher, and the threshold voltage of fin formula field effect transistor is higher.When the voltage applied on grid reaches threshold voltage, make fin Inversion layer is formed in portion, the inversion layer is as channel region.Due to the first fin material layer 120 with the first kind adulterate, There is the second fin material layer 130 Second Type to adulterate, and the first kind is identical with the Second Type, and described The concentration of first kind doping is more than the concentration of Second Type doping.It can so ensure, even if oxidation fin is not complete It is oxidized, it can also make not form inversion layer in the oxidation fin by the voltage adjusted on grid, and in the second fin Inversion layer is formed to form channel region, and then ensures to obtain the fin formula field effect transistor that leakage current is small, low in energy consumption.

In other embodiments, the first fin material layer 120 is adulterated with the first kind, the second fin material Layer 130 does not adulterate.

In other embodiments, the first fin material layer 120 and the second fin material layer 130 are not all mixed It is miscellaneous.

The fin formula field effect transistor of the present embodiment can adjust the by adjusting the height of the second fin material layer 130 The height of two fins, and then the driving current of the fin formula field effect transistor is adjusted, it is a preferred values to make the driving current, The preferable working condition of the fin formula field effect transistor can either be kept, the work(of the fin formula field effect transistor will not be made again Consumption increase.

With reference to figure 7, patterned mask layer 140 is formed in the second fin material layer 130.It is described patterned to cover Film layer 140 defines the position of the second fin.

The material of the patterned mask layer 140 can be the materials known in the art such as silicon nitride, silicon oxynitride.

It is mask with the patterned mask layer 140 with reference to figure 8, etches the second fin material layer 130 and described First fin material layer 120, the lower surface of the first fin material layer 120 is etched to, forms the second fin 131 and the first fin 121;Then the patterned mask layer 140 is removed.

With reference to figure 9, mask layer 141 is formed on second fin 131;After forming the mask layer 141, lateral etching Part first fin 121.

Because the material of the first fin material layer 120 is silicon, the material of the second fin material layer 130 is silicon Germanium.The method of the first fin 121 can be described in lateral etching part:Use CF4、O2And N2Plasma to described first Fin 121 carries out plasma etching;Or use HNO3With the HF aqueous solution is carried out to first fin 121 wet method quarter Erosion.When being performed etching using the above method to first fin 121, first fin 121 has with second fin 131 There is very high etching selection ratio, so substantially first fin 121 only can be etched, reduce its width.

After first fin 121 described in lateral etching part, the width of the first fin 121 is less than second fin 131 Width so that the surface of the second fin 131 exposure not only includes the upper surface and two side of the second fin 131, but also including The lower surface of the second fin 131 not covered by first fin 121.

With reference to figure 10, after the first fin 121 described in lateral etching part, the mask layer 141 is removed.Then, institute is aoxidized The first fin 121 is stated, forms oxidation fin 122;Aoxidize the surface that second fin 131 exposes;In second fin 131 Exposed surface forms grid oxide layer 132.

The precedence for the step of aoxidizing first fin 121 and aoxidizing the surface of the exposure of the second fin 131 can To exchange, can also be carried out in same step.

First fin 121 and the method for aoxidizing the surface that second fin 131 exposes are aoxidized in same step For thermal oxidation method.

Because the width of the first fin 121 is less than the width of second fin 131, the grid oxide layer 132 covers described Upper surface, two side and the lower surface not covered by first fin 121 of second fin 131.

With reference to figure 11, the grid 150 for aoxidizing the fin 131 of fin 122 and second is developed across.

In a particular embodiment, after forming grid 150, in addition to:Form source electrode and drain electrode(Not shown in Figure 11).

The grid 150 is formed on the grid oxide layer 132.

In the prior art, the surface of fin exposure only has the upper surface and two side of fin.In the present embodiment, due to oxidation The width of fin 122 is less than the width of the second fin 131, so the surface of second fin 131 exposure not only includes second The upper surface and two side of fin 131, in addition to the lower surface not covered by the oxidation fin 122, second fin 131 Exposed surface area increase.After forming grid 150, due to grid 150 and by second fin for aoxidizing fin 122 and not covering Also there are relative area, the relative area increase of the fin 131 of grid 150 and second in 131 lower surface, and grid 150 can be controlled well Make the channel region formed in the second fin 131.

Above example is using the material of the first fin material layer 120 as silicon, the material of the second fin material layer 130 Expect for the forming method of the fin formula field effect transistor is described exemplified by SiGe.

In other embodiments, the material of the first fin material layer 120 is SiGe, the second fin material layer 130 material is silicon.Accordingly, the method for the first fin 121 is described in lateral etching part:Use CF4Plasma pair First fin 121 carries out plasma etching;Or wet method is carried out to first fin 121 using the HCl aqueous solution Etching.

In other embodiments, the material of the first fin material layer 120 and the second fin material layer 130 also may be used Think other semi-conducting materials known in the art, as long as meet the first fin 121 described in lateral etching part, described One fin 121 has very high etching selection ratio with second fin 131.

Second embodiment

The difference of the present embodiment and first embodiment is:

With reference to figure 12, also include before forming the grid 150:

Side wall 143 is formed in oxidation fin 122 side wall, the height of the side wall 143 is equal to the oxidation fin 122 Height.

In other embodiments, the height of the side wall 143 might be less that the height of the oxidation fin 122.

Forming the method for the side wall 143 includes:

Spacer material layer is formed on the substrate 110, the oxidation fin 122 and second fin 131;

The spacer material layer is etched using carving technology is returned, exposes upper surface and the side wall of second fin 131, in institute State and side wall 143 is formed in the side wall of oxidation fin 122.

The side wall 143 serves the effect of dielectric layer, makes the electricity between the grid 150 and the oxidation fin 122 Hold and reduce, the electric-field intensity between the grid 150 and the oxidation fin 122 is weakened, even if oxidation fin is not complete Oxidation, it is also difficult to form inversion layer in the oxidation fin 122.And then ensure to obtain the fin field that leakage current is small, low in energy consumption Effect transistor.

The method for sequentially forming the oxidation fin 131 of fin 122 and second from the bottom to top in the substrate 110 may be referred to the One embodiment.

3rd embodiment

The present embodiment provides a kind of fin formula field effect transistor, and with reference to figure 11, the fin formula field effect transistor includes:

Substrate 110;

Oxidation fin 122 in the substrate 110;

The second fin 131 on the oxidation fin 122, the width of second fin 131 are more than the oxidation The width of fin 122;

Grid oxide layer 132 positioned at the surface of second fin 131 exposure;

Across the grid 150 of the oxidation fin 131 of fin 122 and second.

In a particular embodiment, the material of the oxidation fin 122 is silica, germanium oxide or silicon germanium oxide.It is described The material of second fin 131 is germanium, SiGe or silicon.The material of the grid oxide layer 132 is the material pair of second fin 131 The oxide answered, i.e., the material of described second fin 131 is germanium, and the material of the grid oxide layer 132 is just germanium oxide;Described second The material of fin 131 is SiGe, and the material of the grid oxide layer 132 is just silicon germanium oxide;The material of second fin 131 is Silicon, the material of the grid oxide layer 132 is just silica.

In a particular embodiment, there is the oxidation fin 122 first kind to adulterate, and second fin 131 is with the Two types are adulterated, and the first kind is identical with the Second Type, and the concentration of first kind doping is more than described the The concentration of two types doping.

In other embodiments, the oxidation fin 122 has the first doping, and second fin 131 does not adulterate.

In other embodiments, the oxidation fin 122 and second fin 131 all do not adulterate.

Fourth embodiment

The present embodiment provides a kind of fin formula field effect transistor, and with reference to figure 12, the fin formula field effect transistor includes:

Substrate 110;

Oxidation fin 122 in the substrate 110;

Positioned at the side wall 143 of the oxidation side wall of fin 122, the height of the side wall 143 is equal to the oxidation fin 122 Height;

The second fin 131 on the oxidation fin 122, the width of second fin 131 are more than the oxidation The width of fin 122;

Grid oxide layer 132 positioned at the surface of second fin 131 exposure;

Across the grid 150 of the oxidation fin 131 of fin 122 and second.

In other embodiments, the height of the side wall 143 might be less that the height of the oxidation fin 122.

The material of the oxidation fin 122, second fin 131 and the grid oxide layer 132 may be referred to the 3rd implementation Example.The doping of the oxidation fin 131 of fin 122 and second may be referred to 3rd embodiment.

Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute The scope of restriction is defined.

Claims (9)

  1. A kind of 1. forming method of fin formula field effect transistor, it is characterised in that including:
    Substrate is provided;
    Sequentially form the first fin and the second fin from the bottom to top on the substrate, the width of the first fin is less than the second fin Width;Forming the method for the first fin and the second fin includes:The first fin material layer is formed on the substrate, first The second fin material layer is formed in fin material layer, during the first fin material layer is formed, using original position doping to described the One fin material layer carries out first kind doping, or, after forming the first fin material layer, before forming the second fin material layer, First kind doping is carried out to the first fin material layer;During the second fin material layer is formed, adulterated using original position, it is right Second fin material layer carries out Second Type doping, or, after forming the second fin material layer, the second fin material layer is carried out Second Type adulterates, and Second Type is identical with the first kind, and the concentration of Second Type doping is less than the dense of first kind doping Degree;
    First fin described in complete oxidation forms oxidation fin;
    The surface of the second fin exposure is aoxidized, grid oxide layer, complete oxidation institute are formed on the surface of second fin exposure State the first fin and carried out the step of aoxidizing the surface of the second fin exposure in same step;
    Before grid is formed, side wall is formed in the side wall of the oxidation fin, the height of the side wall is equal to or less than described Aoxidize the height of fin;
    After forming oxidation fin and grid oxide layer, the grid of the oxidation fin and the second fin is developed across;
    Make not form inversion layer in oxidation fin by the voltage adjusted on grid, and inversion layer is formed in the second fin.
  2. 2. the forming method of fin formula field effect transistor as claimed in claim 1, it is characterised in that form the first fin and the The method of two fins includes:
    Patterned mask layer is formed in the second fin material layer upper surface;
    Using the patterned mask layer as mask, the second fin material layer and the first fin material layer are etched, is formed wide Spend the fin of identical second and the first fin;
    First fin described in lateral etching part, the width of the first fin is set to be less than the width of the second fin.
  3. 3. the forming method of fin formula field effect transistor as claimed in claim 2, it is characterised in that the material of first fin Expect that for silicon, the material of second fin is SiGe, and the method for the first fin is described in lateral etching part:
    Use CF4、O2And N2Plasma to first fin carry out plasma etching;Or
    Use HNO3Wet etching is carried out to first fin with the HF aqueous solution.
  4. 4. the forming method of fin formula field effect transistor as claimed in claim 2, it is characterised in that the material of first fin Expect that for SiGe, the material of second fin is silicon, and the method for the first fin is described in lateral etching part:
    Use CF4Plasma to first fin carry out plasma etching;Or
    Wet etching is carried out to first fin using the HCl aqueous solution.
  5. 5. the forming method of fin formula field effect transistor as claimed in claim 2, it is characterised in that form the first fin material The method of layer includes:
    Using sedimentation or epitaxial growth method, the first fin material layer is formed on the substrate.
  6. 6. the forming method of the fin formula field effect transistor as described in claim 2 or 5, it is characterised in that form the second fin The method of material layer includes:
    Using sedimentation or epitaxial growth method, the second fin material layer is formed in the first fin material layer.
  7. A kind of 7. fin formula field effect transistor, it is characterised in that including:
    Substrate;
    The oxidation fin of complete oxidation in the substrate, oxidation fin have first kind doping;
    The second fin on the oxidation fin, the width of second fin are more than the width of the oxidation fin, the Two fins have Second Type doping, and Second Type is identical with the first kind, and the concentration of Second Type doping is less than the first kind The concentration of type doping;
    Grid oxide layer positioned at the surface of second fin exposure, complete oxidation are formed described in the oxidation fin and oxidation formation The step of grid oxide layer, is carried out in same step;
    Positioned at the side wall of the oxidation fin side wall, the height of the side wall is equal to or less than the height of the oxidation fin;
    Across the oxidation fin and the grid of the second fin;
    Make not form inversion layer in oxidation fin by the voltage adjusted on grid, and inversion layer is formed in the second fin.
  8. 8. fin formula field effect transistor as claimed in claim 7, it is characterised in that the material of the oxidation fin is oxidation Silicon, germanium oxide or silicon germanium oxide.
  9. 9. fin formula field effect transistor as claimed in claim 7 or 8, it is characterised in that the material of second fin be germanium, SiGe or silicon.
CN201310338358.0A 2013-08-05 2013-08-05 Fin formula field effect transistor and forming method thereof CN104347416B (en)

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US9257558B2 (en) * 2014-07-10 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device with gate oxide layer
CN106558555A (en) * 2015-09-29 2017-04-05 中芯国际集成电路制造(上海)有限公司 The forming method of fin field effect pipe

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CN103000524A (en) * 2011-09-13 2013-03-27 中芯国际集成电路制造(上海)有限公司 Fin field-effect transistor and manufacturing method thereof

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CN1665000A (en) * 2004-03-01 2005-09-07 国际商业机器公司 Method of manufacture of finfet devices with T-shaped fins and devices manufactured thereby
US20070205459A1 (en) * 2006-03-02 2007-09-06 Cho Eun-Suk Nonvolatile memory devices and methods of forming the same
CN101432852A (en) * 2006-04-26 2009-05-13 Nxp股份有限公司 Non-volatile memory device
CN101271922A (en) * 2007-03-19 2008-09-24 海力士半导体有限公司 Transistor and method for fabricating the same
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