CN104346282A - Configuration information storage and electrifying method and device for nonvolatile flash - Google Patents
Configuration information storage and electrifying method and device for nonvolatile flash Download PDFInfo
- Publication number
- CN104346282A CN104346282A CN201310320097.XA CN201310320097A CN104346282A CN 104346282 A CN104346282 A CN 104346282A CN 201310320097 A CN201310320097 A CN 201310320097A CN 104346282 A CN104346282 A CN 104346282A
- Authority
- CN
- China
- Prior art keywords
- address
- block
- flash memory
- label information
- configuration information
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
The invention discloses an electrifying method for a nonvolatile flash. The method comprises the following steps: searching marking information from the nonvolatile flash; reading the configuration information stored in a block corresponding to the marking information; electrifying according to the configuration information, wherein the marking information is produced by the following mode: searching a good block of a non-block 0 in the nonvolatile flash, writing the configuration information into the good block, and then producing the marking information for the good block. According to the method, the marking information is provided for the block in which the configuration information is stored, the marking information is searched, and the configuration information is extracted, so as finish the electrifying configuration, and as a result, the automation degree of production is raised.
Description
Technical field
The present invention relates to the technical field of data-carrier store read-write operation, particularly relate to a kind of storage means of non-volatile flash memory configuration information, a kind of powering method of non-volatile flash memory, a kind of memory storage of non-volatile flash memory configuration information, and, a kind of electrifying device of non-volatile flash memory.
Background technology
Now, data storage is a critical function during computing machine uses.Nonvolatile memory is a wherein important type.Conventional nonvolatile memory has EEPROM(EEPROM (Electrically Erasable Programmable Read Only Memo)) and Nand-flash(non-volatile flash memory).
Nand-flash inside adopts non-linear macroelement pattern, and the realization for solid-state large-capacity internal memory provides cheap effective solution, is therefore widely used.And due to the naked NAND Flash of advanced technologies be cannot be direct applied, need Nand-flash Controller(non-volatile flash memory controller) carry out management control, comprise abrasion equilibrium, garbage reclamation, bad block management, Error Control etc.
At present, Nand-flash Controller slip-stick artist will consider the Nand-flash supporting many manufacturers produce when designing, have different configurations, such as amount of capacity, company-information etc. for different Nand-flash.Nand-flash Controller itself cannot recorded information, this just needs information to be stored into Nand-flash inside, does programming operation, configuration information must be read when powering at every turn a certain region of NAND, to complete the correct configuration of different chip, could correctly work.Nand-flash inside allows bad block to exist, and when encountering bad block, can not programme to bad block and wipe, this just makes the configuration information of different sheet Nand-flash cannot deposit an identical fixed position, make power on operation very loaded down with trivial details, production efficiency is low.
Therefore, those skilled in the art's problem in the urgent need to address is: the mechanism that powers on providing a kind of Nand-flash of being applicable to system, in order to simplify the step of power on operation, improves the efficiency of efficiency and the production powered on.
Summary of the invention
The storage that technical matters to be solved by this invention is to provide a kind of Nand-flash configuration information, the method powered on, in order to simplify the step of power on operation, improve the efficiency powered on, thus improve the efficiency of producing.
Accordingly, the storage that present invention also offers a kind of Nand-flash configuration information, the device powered on, in order to ensure said method application in practice.
In order to solve the problem, the invention discloses a kind of storage means of non-volatile flash memory configuration information, described method comprises:
Search the good block of non-piece 0 in described non-volatile flash memory;
By in the described good block of described configuration information write;
Label information is generated for described good block.
Preferably, the step of searching the good block of in described non-volatile flash memory non-piece 0 described in comprises:
Address in preset address register is set to the first preset address; Described first preset address is the address of non-piece 0;
Access the address in described address register;
Judge the block whether as well block that described address is corresponding; If so, then determine to find the good block of in described non-volatile flash memory non-piece 0; If not, then change the address in described address register according to the first preset rules, return the step of the described address of described access; Wherein, described address is the address of non-piece 0.
The invention also discloses a kind of powering method of non-volatile flash memory, described method comprises:
Search the label information in described non-volatile flash memory;
Read the configuration information stored in block corresponding to described label information;
Complete according to described configuration information and power on;
Wherein, described label information generates in the following way:
Search the good block of in described non-volatile flash memory non-piece 0;
By in the described good block of described configuration information write;
Label information is generated for described good block.
Preferably, the step of searching the label information in described non-volatile flash memory described in comprises:
Address in preset address register is set to the second preset address;
Access the address in described address register;
Judge whether block corresponding to described address has label information; If so, then determine to find the label information in described non-volatile flash memory; If not, then change the address in described address register according to the second preset rules, return the step of the described address of described access.
The invention also discloses a kind of memory storage of non-volatile flash memory configuration information, described device comprises:
Good block searches module, for searching the good block of non-piece 0 in described non-volatile flash memory;
Configuration information writing module, for writing in described good block by described configuration information;
Label information generation module, for generating label information for described good block.
Preferably, described good block is searched module and is comprised:
First initialization submodule, for being set to the first preset address by the address in preset address register; Described first preset address is the address of non-piece 0;
Access submodule, for accessing the address in described address register;
Whether as well first judges submodule, for judging the block block that described address is corresponding; If so, then call and determine submodule; If not, then call the first address change submodule, return and call access submodule;
First determines submodule, for determining to find the good block of in described non-volatile flash memory non-piece 0;
First address change submodule, for changing the address in described address register according to the first preset rules; Wherein, described address is the address of non-piece 0.
The invention also discloses a kind of electrifying device of non-volatile flash memory, described device comprises:
Label information searches module, for searching the label information in described non-volatile flash memory;
Configuration information read module, for reading the configuration information stored in block corresponding to described label information;
Power on module, powers on for completing according to described configuration information;
Wherein, described label information generates in the following way:
Search the good block of in described non-volatile flash memory non-piece 0;
By in the described good block of described configuration information write;
Label information is generated for described good block.
Preferably, described label information is searched module and is comprised:
Second initialization submodule, for being set to the second preset address by the address in preset address register;
Access submodule, for accessing the address in described address register;
Second judges submodule, for judging whether block corresponding to described address has label information; If so, then call second and determine submodule; If not, then call the second address change submodule, return and call access submodule;
Second determines submodule, finds the label information in described non-volatile flash memory for determining;
Second address change submodule, for changing the address in described address register according to the second preset rules.
Compared with background technology, the present invention has the following advantages:
The present invention is directed to the block storing configuration information and generate label information, completing by searching label information extraction configuration information the configuration that powers on, improving production automation degree.
The present invention, without the need to knowing the block at bad block and configuration information place in advance, decreases the operation steps of the configuration that powers on, and improves the dirigibility of the configuration that powers on, improves the efficiency of production.
Accompanying drawing explanation
Fig. 1 is the flow chart of steps of storage side's embodiment of a kind of non-volatile flash memory configuration information of the present invention;
Fig. 2 is the block diagram of a kind of store configuration information of the present invention;
Fig. 3 is the flow chart of steps of the powering method embodiment of a kind of non-volatile flash memory of the present invention;
Fig. 4 is a kind of flow chart of steps powered on of the present invention;
Fig. 5 is the structured flowchart of the memory storage embodiment of a kind of non-volatile flash memory configuration information of the present invention;
Fig. 6 is the structured flowchart of the electrifying device embodiment of a kind of non-volatile flash memory of the present invention.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, and below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
With reference to Fig. 1, show the flow chart of steps of storage side's embodiment of a kind of non-volatile flash memory configuration information of the present invention, can comprise the following steps:
The good block of step 101, non-piece 0 of searching in described non-volatile flash memory;
It should be noted that, the present invention can be applied to Nand-flash Controller(non-volatile flash memory controller) production control in.
In actual applications, due to Nand-flash(non-volatile flash memory) all can ensure block0(block 0, first block) block as well, and Nand-flash just has a good block and bad block table producing usually, usually can be stored in block0.But Nand-flash can produce bad block usually in production, use procedure, therefore needs the good block searching non-block0, for store configuration information.
In one preferred embodiment of the invention, step 101 can comprise following sub-step:
Sub-step S11, is set to the first preset address by the address in preset address register; Described first preset address is the address of non-piece 0;
Sub-step S12, accesses the address in described address register;
Whether as well sub-step S13, judge the block block that described address is corresponding; If so, then sub-step S14 is performed; If not, then perform sub-step S15, return sub-step S12;
Sub-step S14, determines to find the good block of in described non-volatile flash memory non-piece 0;
Sub-step S15, changes the address in described address register according to the first preset rules; Wherein, described address is the address of non-piece 0.
With reference to Fig. 2, show the block diagram of a kind of store configuration information of the present invention; Be appreciated that preset address register can refer to the address register storing in Nand-flash Controller and be sent to Nand-flash.As shown in the figure, the first preset address presetting address register is the address of the arbitrary non-block0 in Nand-flash capacity, and the address in follow-up searching also is all the address of non-block0.
It should be noted that, as well whether the block judging Nand-flash the mode of block and the first preset rules, and can be set according to actual needs by those skilled in the art, the present invention is not limited this.
Such as, can the 1st the spare area district of the 0th page of block of queried access whether be non-fully FFh, if it is prove bad block; Otherwise, then as well block.
Such as, one can be added according to the order of the address of address register and obtain next replacing address, also can subtract one according to the order of the address of address register and obtain next replacing address, as long as the block of non-block0 can have been traveled through.
Certainly, above-mentioned method of searching non-block0 is exemplarily, and when implementing the embodiment of the present invention, can arrange according to actual conditions the method that other search non-block0, the embodiment of the present invention is not limited this.
Step 102, by the described good block of described configuration information write;
Be appreciated that step 102 is inside configuration information being cured to Nand-flash.
The size of such as NAND chip is 1Gbit, so can be cured in the highest block by configuration information, and this block address is xx00FFC0h.
The particular location that configuration information solidifies can be set according to actual needs by those skilled in the art, and the present invention is not limited this.
Step 103, generate label information for described good block.
It should be noted that, label information indicates the block at configuration information place, and the mode generating label information can be set according to actual needs by those skilled in the art, as long as those skilled in the art can go to find label information according to the mode of the mark of setting, the present invention is not limited this.
Such as can be labeled as and start with 0 of a word, and terminate with 0 of a word.
With reference to Fig. 3, show the flow chart of steps of the powering method embodiment of a kind of non-volatile flash memory of the present invention, can comprise the following steps:
Step 301, the label information searched in described non-volatile flash memory;
Step 302, read the configuration information stored in block corresponding to described label information;
Step 303, to complete according to described configuration information and power on;
Wherein, described label information can generate in the following way:
Search the good block of in described non-volatile flash memory non-piece 0;
By in the address of the described good block of described configuration information write;
Label information is generated for described good block.
Be appreciated that label information can indicate the block at configuration information place.The present invention by label lookup to configuration information place block, can read configuration information.And the method read can read according to the method for the read operation defined in the datasheet of the Nand-flash of each producer, the present invention does not describe in detail one by one at this.
Because the configuration information in practical application is not quite similar, power on operation is also not quite similar, and power on operation can be set according to actual needs by not those skilled in the art, and the present invention is not described in detail one by one at this.
In one preferred embodiment of the invention, the step of searching the good block of in described non-volatile flash memory non-piece 0 can comprise following sub-step:
Sub-step S21, is set to the first preset address by the address in preset address register; Described first preset address is the address of non-piece 0;
Sub-step S22, accesses the address in described address register;
Whether as well sub-step S23, judge the block block that described address is corresponding; If so, then sub-step S24 is performed; If not, then, perform sub-step S25, return sub-step S22;
Sub-step S24, determines to find the good block of in described non-volatile flash memory non-piece 0;
Sub-step S25, changes the address in described address register according to the first preset rules; Wherein, described address is the address of non-piece 0.
In one preferred embodiment of the invention, step 301 can comprise following sub-step:
Sub-step S31, is set to the second preset address by the address in preset address register;
Sub-step S32, accesses the address in described address register;
Sub-step S33, judges whether block corresponding to described address has label information; If so, then sub-step S34 is performed; If not, then perform sub-step S35, return sub-step S32;
Sub-step S34, determines to find the label information in described non-volatile flash memory;
Sub-step S35, changes the address in described address register according to the second preset rules.
With reference to Fig. 4, show a kind of flow chart of steps powered on of the present invention; Be appreciated that preset address register can refer to the address register storing in Nand-flash Controller and be sent to Nand-flash.
It should be noted that, the mode and the second preset rules that judge whether to have label information can be set according to actual needs by those skilled in the art, and the present invention is not limited this.
Such as data are write the 1st page in blockxx00FFC0h, can from the highest block looks for when so reading.To address be read point to the 1st page of certain block, by page data reading, whether correctly compare label information, after page data reading, determine marked locations data be whether before the value of mark, if so, then this block is the block at configuration information place.If not, then continue to search label information.
Such as, one can be added according to the order of the address of address register and obtain next replacing address, also can subtract one according to the order of the address of address register and obtain next replacing address, as long as the block in Nand-flash can have been traveled through.
Certainly, above-mentioned method of searching label information is exemplarily, and when implementing the embodiment of the present invention, can arrange according to actual conditions the method that other search label information, the embodiment of the present invention is not limited this.
In a preferred exemplary of the present embodiment, in order to enhance productivity, the first preset address can be identical with the second preset address, and the first preset rules can be identical with the second preset rules.
The present invention is directed to the block storing configuration information and generate label information, completing by searching label information extraction configuration information the configuration that powers on, improving production automation degree.
The present invention, without the need to knowing the block at bad block and configuration information place in advance, decreases the operation steps of the configuration that powers on, and improves the dirigibility of the configuration that powers on, improves the efficiency of production
It should be noted that, for embodiment of the method, in order to simple description, therefore it is all expressed as a series of combination of actions, but those skilled in the art should know, the present invention is not by the restriction of described sequence of movement, because according to the present invention, some step can adopt other orders or carry out simultaneously.Secondly, those skilled in the art also should know, the embodiment described in instructions all belongs to preferred embodiment, and involved action might not be that the present invention is necessary.
With reference to Fig. 5, show the structured flowchart of the memory storage embodiment of a kind of non-volatile flash memory configuration information of the present invention, can comprise as lower module:
Good block searches module 501, for searching the good block of non-piece 0 in described non-volatile flash memory;
Configuration information writing module 502, for writing in described good block by described configuration information;
Label information generation module 503, for generating label information for described good block.
In one preferred embodiment of the invention, described good block is searched module and can be comprised following submodule:
First initialization submodule, for being set to the first preset address by the address in preset address register; Described first preset address is the address of non-piece 0;
Access submodule, for accessing the address in described address register;
Whether as well first judges submodule, for judging the block block that described address is corresponding; If so, then call and determine submodule; If not, then call the first address change submodule, return and call access submodule;
First determines submodule, for determining to find the good block of in described non-volatile flash memory non-piece 0;
First address change submodule, for changing the address in described address register according to the first preset rules; Wherein, described address is the address of non-piece 0.
With reference to Fig. 6, show the structured flowchart of the electrifying device embodiment of a kind of non-volatile flash memory of the present invention, can comprise as lower module:
Label information searches module 601, for searching the label information in described non-volatile flash memory;
Configuration information read module 602, for reading the configuration information stored in block corresponding to described label information;
Power on module 603, powers on for completing according to described configuration information;
Wherein, described label information generates in the following way:
Search the good block of in described non-volatile flash memory non-piece 0;
By in the described good block of described configuration information write;
Label information is generated for described good block.
In one preferred embodiment of the invention, described label information is searched module and can be comprised following submodule:
Second initialization submodule, for being set to the second preset address by the address in preset address register;
Access submodule, for accessing the address in described address register;
Second judges submodule, for judging whether block corresponding to described address has label information; If so, then call second and determine submodule; If not, then call the second address change submodule, return and call access submodule;
Second determines submodule, finds the label information in described non-volatile flash memory for determining;
Second address change submodule, for changing the address in described address register according to the second preset rules.
Because described device embodiment is substantially corresponding to preceding method embodiment, therefore not detailed part in the description of the present embodiment, see the related description in previous embodiment, just can repeat no more at this.
Those skilled in the art should understand, embodiments of the invention can be provided as method, system or computer program.Therefore, the present invention can adopt the form of complete hardware embodiment, completely software implementation or the embodiment in conjunction with software and hardware aspect.And the present invention can adopt in one or more form wherein including the upper computer program implemented of computer-usable storage medium (including but not limited to magnetic disk memory, CD-ROM, optical memory etc.) of computer usable program code.
The present invention describes with reference to according to the process flow diagram of the method for the embodiment of the present invention, equipment (system) and computer program and/or block scheme.Should understand can by the combination of the flow process in each flow process in computer program instructions realization flow figure and/or block scheme and/or square frame and process flow diagram and/or block scheme and/or square frame.These computer program instructions can being provided to the processor of multi-purpose computer, special purpose computer, Embedded Processor or other programmable data processing device to produce a machine, making the instruction performed by the processor of computing machine or other programmable data processing device produce device for realizing the function of specifying in process flow diagram flow process or multiple flow process and/or block scheme square frame or multiple square frame.
These computer program instructions also can be stored in can in the computer-readable memory that works in a specific way of vectoring computer or other programmable data processing device, the instruction making to be stored in this computer-readable memory produces the manufacture comprising command device, and this command device realizes the function of specifying in process flow diagram flow process or multiple flow process and/or block scheme square frame or multiple square frame.
These computer program instructions also can be loaded in computing machine or other programmable data processing device, make on computing machine or other programmable devices, to perform sequence of operations step to produce computer implemented process, thus the instruction performed on computing machine or other programmable devices is provided for the step realizing the function of specifying in process flow diagram flow process or multiple flow process and/or block scheme square frame or multiple square frame.
Although describe the preferred embodiments of the present invention, those skilled in the art once obtain the basic creative concept of cicada, then can make other change and amendment to these embodiments.So claims are intended to be interpreted as comprising preferred embodiment and falling into all changes and the amendment of the scope of the invention.
Finally, also it should be noted that, in this article, the such as relational terms of first and second grades and so on is only used for an entity or operation to separate with another entity or operational zone, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.When not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment comprising described key element and also there is other identical element.
Above the electrifying device of the storage means of a kind of non-volatile flash memory configuration information provided by the present invention, a kind of memory storage of non-volatile flash memory configuration information, a kind of powering method of non-volatile flash memory and a kind of non-volatile flash memory is described in detail, apply specific case herein to set forth principle of the present invention and embodiment, the explanation of above embodiment just understands method of the present invention and core concept thereof for helping; Meanwhile, for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (8)
1. a storage means for non-volatile flash memory configuration information, is characterized in that, described method comprises:
Search the good block of non-piece 0 in described non-volatile flash memory;
By in the described good block of described configuration information write;
Label information is generated for described good block.
2. method according to claim 1, is characterized in that, described in search the good block of in described non-volatile flash memory non-piece 0 step comprise:
Address in preset address register is set to the first preset address; Described first preset address is the address of non-piece 0;
Access the address in described address register;
Judge the block whether as well block that described address is corresponding; If so, then determine to find the good block of in described non-volatile flash memory non-piece 0; If not, then change the address in described address register according to the first preset rules, return the step of the described address of described access; Wherein, described address is the address of non-piece 0.
3. a powering method for non-volatile flash memory, is characterized in that, described method comprises:
Search the label information in described non-volatile flash memory;
Read the configuration information stored in block corresponding to described label information;
Complete according to described configuration information and power on;
Wherein, described label information generates in the following way:
Search the good block of in described non-volatile flash memory non-piece 0;
By in the described good block of described configuration information write;
Label information is generated for described good block.
4. method according to claim 3, is characterized in that, described in the step of label information of searching in described non-volatile flash memory comprise:
Address in preset address register is set to the second preset address;
Access the address in described address register;
Judge whether block corresponding to described address has label information; If so, then determine to find the label information in described non-volatile flash memory; If not, then change the address in described address register according to the second preset rules, return the step of the described address of described access.
5. a memory storage for non-volatile flash memory configuration information, is characterized in that, described device comprises:
Good block searches module, for searching the good block of non-piece 0 in described non-volatile flash memory;
Configuration information writing module, for writing in described good block by described configuration information;
Label information generation module, for generating label information for described good block.
6. device according to claim 5, is characterized in that, described good block is searched module and comprised:
First initialization submodule, for being set to the first preset address by the address in preset address register; Described first preset address is the address of non-piece 0;
Access submodule, for accessing the address in described address register;
Whether as well first judges submodule, for judging the block block that described address is corresponding; If so, then call and determine submodule; If not, then call the first address change submodule, return and call access submodule;
First determines submodule, for determining to find the good block of in described non-volatile flash memory non-piece 0;
First address change submodule, for changing the address in described address register according to the first preset rules; Wherein, described address is the address of non-piece 0.
7. an electrifying device for non-volatile flash memory, is characterized in that, described device comprises:
Label information searches module, for searching the label information in described non-volatile flash memory;
Configuration information read module, for reading the configuration information stored in block corresponding to described label information;
Power on module, powers on for completing according to described configuration information;
Wherein, described label information generates in the following way:
Search the good block of in described non-volatile flash memory non-piece 0;
By in the described good block of described configuration information write;
Label information is generated for described good block.
8. device according to claim 7, is characterized in that, described label information is searched module and comprised:
Second initialization submodule, for being set to the second preset address by the address in preset address register;
Access submodule, for accessing the address in described address register;
Second judges submodule, for judging whether block corresponding to described address has label information; If so, then call second and determine submodule; If not, then call the second address change submodule, return and call access submodule;
Second determines submodule, finds the label information in described non-volatile flash memory for determining;
Second address change submodule, for changing the address in described address register according to the second preset rules.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310320097.XA CN104346282A (en) | 2013-07-26 | 2013-07-26 | Configuration information storage and electrifying method and device for nonvolatile flash |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310320097.XA CN104346282A (en) | 2013-07-26 | 2013-07-26 | Configuration information storage and electrifying method and device for nonvolatile flash |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104346282A true CN104346282A (en) | 2015-02-11 |
Family
ID=52501942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310320097.XA Pending CN104346282A (en) | 2013-07-26 | 2013-07-26 | Configuration information storage and electrifying method and device for nonvolatile flash |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104346282A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080031061A1 (en) * | 2006-08-03 | 2008-02-07 | Micron Technology, Inc. | System and method for initiating a bad block disable process in a non-volatile memory |
| CN101174458A (en) * | 2006-11-03 | 2008-05-07 | 三星电子株式会社 | Non-volatile memory device and method for setting configuration information thereof |
| CN102637461A (en) * | 2012-03-07 | 2012-08-15 | 山东华芯半导体有限公司 | Start method supporting bad block flash memory scanning |
| CN103198019A (en) * | 2011-10-24 | 2013-07-10 | 三星电子株式会社 | File system and control method thereof |
-
2013
- 2013-07-26 CN CN201310320097.XA patent/CN104346282A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080031061A1 (en) * | 2006-08-03 | 2008-02-07 | Micron Technology, Inc. | System and method for initiating a bad block disable process in a non-volatile memory |
| CN101174458A (en) * | 2006-11-03 | 2008-05-07 | 三星电子株式会社 | Non-volatile memory device and method for setting configuration information thereof |
| CN103198019A (en) * | 2011-10-24 | 2013-07-10 | 三星电子株式会社 | File system and control method thereof |
| CN102637461A (en) * | 2012-03-07 | 2012-08-15 | 山东华芯半导体有限公司 | Start method supporting bad block flash memory scanning |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9626286B2 (en) | Hardware and firmware paths for performing memory read processes | |
| EP2299364B1 (en) | Metadata redundancy schemes for non-volatile memories | |
| CN102999431B (en) | Weave sequence counter for non-volatile memory systems | |
| US8131911B2 (en) | Data writing method, and flash storage system and controller using the same | |
| US8386698B2 (en) | Data accessing method for flash memory and storage system and controller using the same | |
| US8954647B2 (en) | Systems and methods for redundantly storing metadata for non-volatile memory | |
| CN105740163A (en) | Nand Flash bad block management method | |
| WO2018063585A1 (en) | Techniques to manage key-value storage at a memory or storage device | |
| US20090198875A1 (en) | Data writing method for flash memory, and controller and system using the same | |
| CN103996412A (en) | Power-fail protection method applied to intelligent-card nonvolatile memories | |
| US20140372668A1 (en) | Data writing method, memory controller and memory storage apparatus | |
| US8074128B2 (en) | Block management and replacement method, flash memory storage system and controller using the same | |
| TW201305818A (en) | Data writing method, memory controller and memory storage apparatus | |
| CN104951410A (en) | Chip information access method and device | |
| CN103593301B (en) | Bad block management method and system | |
| CN104142979B (en) | A kind of indexing means for realizing RFID tag storage management | |
| CN110532195A (en) | The workload sub-clustering of storage system and the method for executing it | |
| KR101826778B1 (en) | EEPROM Emulation Method Considering implementation of Flash Life Cycle and Performance Improvement | |
| CN105205015A (en) | Data storage method and storage equipment | |
| CN102800357A (en) | Program code loading and accessing methods, memory controller and storage device of memory | |
| CN103680610A (en) | Method and device for write operation of NAND Flash storage device with differential storage | |
| CN111324289B (en) | Memory device | |
| KR20210080967A (en) | Controller and operation method thereof | |
| CN104346282A (en) | Configuration information storage and electrifying method and device for nonvolatile flash | |
| US8832358B2 (en) | Data writing method, memory controller and memory storage apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150211 |