CN104332695B - A kind of refrigeration mode Terahertz/infrared stacked detectors - Google Patents
A kind of refrigeration mode Terahertz/infrared stacked detectors Download PDFInfo
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- CN104332695B CN104332695B CN201410391942.7A CN201410391942A CN104332695B CN 104332695 B CN104332695 B CN 104332695B CN 201410391942 A CN201410391942 A CN 201410391942A CN 104332695 B CN104332695 B CN 104332695B
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Abstract
The present invention relates to a kind of refrigeration mode Terahertz/infrared stacked detectors, it is made up of microstrip antenna, detector element and reading circuit, the microstrip antenna is by the conductive film paster and metal feeder above dielectric substrate, and the conductive film earth plate below dielectric substrate is constituted, the conductive film earth plate of microstrip antenna is pasted onto the one side of detector element by adhesive, and the another side of detector element is connected by connecting pole with reading circuit.Compact conformation, small volume are realized, simplifies overall structure, is that the extensive use of THz/ infrared dual mode complex probes lays the foundation.
Description
Technical field
The present invention relates to a kind of refrigeration mode Terahertz/infrared stacked detectors, belong in multimode, multispectral complex probe
Detector technology.
Background technology
Using bimodulus or multimode Detection Techniques can the significantly more efficient characteristic to target detect, be future probes skill
One of main flow direction of art development.Because bimodulus or multi-mode complex probe can be detected more than two kinds of electromagnetism spectral coverages of same target
Target property, therefore, it is possible to provide more information content, be conducive to displaying one's respective advantages, solve single-mode be difficult to solve
The problem of.
The window of antenna as optical detector can be realized to bimodulus aperture detection altogether, but the antenna must printing opacity.It is transparent
Electronics is very popular research field in recent years, and the metal and graphene of nanometer grade thickness both have good electric conductivity
Can, and have in infrared band very high transmitance.It is therefore possible to use infrared ultra-thin materials substitute conventional microband paste thoroughly
Metal patch (film) and floor in antenna, prepare infrared THz antennas thoroughly, and the combination of itself and infrared focal plane detector can
To realize the infrared compound stacked detectors of THz/.
Compact conformation, small volume are required in some application systems and aperture visual field is coaxially total to.In order to meet this demand,
The present invention prepares a kind of compact conformation, small volume can realize the detector of bimodulus detection, i.e. stacked detectors again.
The content of the invention
It is an object of the invention to provide a kind of refrigeration mode Terahertz/infrared stacked detectors, to solve some application systems
In system to detector should compact conformation, small volume, can realize again bimodulus detection demand technical problem.
To achieve the above object, the solution of the present invention includes a kind of refrigeration mode Terahertz/infrared stacked detectors, by micro-strip
Antenna, refrigeration property detector element and reading circuit are constituted, and the microstrip antenna is by the conduction above dielectric substrate
Film patch and metal feeder, and the conductive film earth plate composition below dielectric substrate, it is characterised in that micro-
Conductive film earth plate with antenna is pasted onto the one side of refrigeration mode detector element, refrigeration mode detector element by adhesive
Another side be connected by connecting pole with reading circuit；The saturating infra-red radiation of conductive film.
The conductive film is 2-8 layer graphene films, and the refrigeration mode detector element is visited for InSb infrared focus planes
Survey device；Normal working temperature is 77K-80K.
The conductive film paster is into array distribution, and conductive film paster and a metal feeder in each array connect
Connect, infrared focal plane detector contains the photosensitive member of array distribution, metal feeder is distributed in corresponding to the gap between photosensitive member
Dielectric substrate on.
Gap between the photosensitive member is 10-20 microns.
The connecting pole is indium post.
The dielectric substrate chooses silica, sapphire, magnesium fluoride or spinelle.
Microstrip antenna and detector element are pasted by adhesive in the stacked detectors that technical scheme is provided
Together, detector element is linked together by indium post and reading circuit, and this makes stacked detectors compact conformation, small volume,
It can be detected with bimodulus.
In addition, the graphene film that the conductive film paster of microstrip antenna is used, graphene film can not only absorb too
Hertz wave, can also transmit infrared ray, and replacing metal patch with graphene makes microstrip antenna, when including infrared and THz
Ray when injecting the bimodulus detector, first pass around microstrip antenna prepared by infrared conductive film, THz ripples connect
Receive, because the microstrip antenna integrally has good transmitance to infrared band, InSb focus planar detectors can receive big portion
The infrared-ray penetrated is divided into, it is achieved thereby that bimodulus is detected, and compact conformation, small volume, simplify overall structure, be THz/ red
The extensive use of outer bimodulus complex probe lays the foundation.
Brief description of the drawings
Fig. 1 is the top view of stacked detectors in the embodiment of the present invention；
Fig. 2 is the side view of stacked detectors in the embodiment of the present invention；
Fig. 3 is the profile of stacked detectors in the embodiment of the present invention；
1 is dielectric substrate in figure, and 2 be saturating infrared conductive film paster, and 3 be metal feeder, and 4 lead to be thoroughly infrared
Conductive film floor, 5 be InSb focus planar detectors, and 6 be indium post, and 7 be reading circuit, and 8 be thoroughly infrared low-temperature adhesive.
Embodiment
The present invention will be further described in detail below in conjunction with the accompanying drawings.
Fig. 1, Fig. 2 show a kind of refrigeration mode Terahertz/infrared dual mode stacked detectors, and the bimodulus stacked detectors are by micro-
Band antenna, InSb focus planar detectors 5 constitute 7 with reading circuit, and wherein microstrip antenna is by above dielectric substrate 1
Saturating infrared conductive film paster 2 and metal feeder 3, and the saturating infrared conductive film ground connection below dielectric substrate 1
Plate 4 is constituted, and the saturating infrared conductive film earth plate 4 of microstrip antenna is pasted onto InSb by a kind of infrared low-temperature adhesive 8
The back side of focus planar detector 5, InSb focus planar detectors front connects into path by indium post 6 and reading circuit 7.
Saturating infrared conductive film is made up of the graphene film of three layers of nanometer grade thickness.
Saturating infrared conductive film in the figure selecting 4*4 member patch arrays of saturating infrared conductive film paster 2, each array
Paster 2 is all connected with a metal feeder 3, and InSb focus planar detectors 4 contain the photosensitive member that bin number is 64*64, photosensitive member
Between gap be 10-20 micron, in order to not block incident infra-red radiation, metal feeder 3 is accurately distributed in photosensitive member
Between gap corresponding to dielectric substrate 1 on region.
As shown in figure 3, it can also be 128 × 128 yuan that infrared focal plane detector, which is refrigeration mode InSb focus planar detectors,
With 256 × 256 yuan, normal working temperature is 77K-80K.
Wherein the patch size and Rankine-Hugoniot relations of microstrip antenna are relevant with the array number of required THz frequencies and antenna, root
It is configured according to concrete condition.The material selection chrome gold of metal feeder 3, the centre frequency of Antenna Operation is 0.1THz, and insulation is situated between
Matter substrate 1 selects sapphire, and thickness is 0.2 millimeter, and saturating infrared conductive film selects three layer graphene films.Connecting pole is indium
Post.Dielectric substrate 1 chooses silica, sapphire, magnesium fluoride or spinelle.
A kind of specific embodiment given above, but the present invention is not limited to described embodiment.The present invention's
Basic ideas are such scheme, for those of ordinary skill in the art, according to the teachings of the present invention, design various modifications
Model, formula, parameter and creative work need not be spent.Without departing from the principles and spirit of the present invention to reality
The change, modification, replacement and modification that the mode of applying is carried out are still fallen within protection scope of the present invention.
Claims (6)
1. a kind of refrigeration mode Terahertz/infrared stacked detectors, by microstrip antenna, refrigeration mode detector element and reading circuit structure
Into, the microstrip antenna by the graphene film paster and metal feeder above dielectric substrate, and in insulation
Graphene film earth plate below dielectric substrate is constituted, it is characterised in that the graphene film earth plate of microstrip antenna passes through
Adhesive is pasted onto the one side of refrigeration mode detector element, and the another side of refrigeration mode detector element is electric with reading by connecting pole
Road is connected；The saturating infra-red radiation of graphene film.
2. refrigeration mode Terahertz according to claim 1/infrared stacked detectors, it is characterised in that the graphene is thin
Film is 2-8 layer graphene films, and the refrigeration mode detector element is InSb infrared focal plane detectors；Normal working temperature is
77K-80K。
3. refrigeration mode Terahertz according to claim 1/infrared stacked detectors, it is characterised in that the graphene is thin
Film paster is into array distribution, and the graphene film paster in each array is connected with a metal feeder, and infrared focus plane is visited
The photosensitive member that device contains array distribution is surveyed, metal feeder is distributed in the dielectric substrate corresponding to the gap between photosensitive member
On.
4. refrigeration mode Terahertz according to claim 3/infrared stacked detectors, it is characterised in that the photosensitive member it
Between gap be 10-20 microns.
5. refrigeration mode Terahertz according to claim 1/infrared stacked detectors, it is characterised in that the connecting pole is
Indium post.
6. refrigeration mode Terahertz according to claim 1/infrared stacked detectors, it is characterised in that the dielectric
Substrate chooses silica, sapphire, magnesium fluoride or spinelle.
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| CN201410391942.7A CN104332695B (en) | 2014-08-12 | 2014-08-12 | A kind of refrigeration mode Terahertz/infrared stacked detectors |
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| CN201410391942.7A CN104332695B (en) | 2014-08-12 | 2014-08-12 | A kind of refrigeration mode Terahertz/infrared stacked detectors |
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| CN104332695A CN104332695A (en) | 2015-02-04 |
| CN104332695B true CN104332695B (en) | 2017-10-31 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107271042A (en) * | 2017-04-27 | 2017-10-20 | 中国空空导弹研究院 | A kind of detector crosstalk measuring device, its preparation method and crosstalk measuring method |
| CN109509809B (en) * | 2017-09-14 | 2022-03-18 | 浙江英孚莱德光电科技有限公司 | Infrared focal plane detector and preparation method thereof |
| CN110274889B (en) * | 2018-03-15 | 2021-05-28 | 南京大学 | Multichannel terahertz spectrum detection unit based on surface plasma resonance antenna |
| CN109855741A (en) * | 2019-01-31 | 2019-06-07 | 华东师范大学 | A kind of highly sensitive direct detection system of SOS substrate devices Terahertz of room temperature |
| CN110907041A (en) * | 2019-12-06 | 2020-03-24 | 中国空空导弹研究院 | Refrigeration state judgment system of refrigeration type infrared focal plane detector |
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| US6100525A (en) * | 1986-07-14 | 2000-08-08 | Lockheed Martin Corporation | Uncooled infrared detector |
| CN103308181A (en) * | 2013-04-27 | 2013-09-18 | 北京理工大学 | VOx terahertz uncooled focal plane detector component |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101482609B (en) * | 2008-03-05 | 2013-11-20 | 中国科学院嘉兴无线传感网工程中心 | Extreme low-altitude low-speed flat micro-strip radar detector based on wireless sensing network |
| CN102445711B (en) * | 2010-09-30 | 2013-10-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | THz-wave detector |
| CN102569432B (en) * | 2010-12-17 | 2014-12-10 | 国家纳米科学中心 | Transparent electrode material and preparation method thereof |
| CN103575407A (en) * | 2012-07-18 | 2014-02-12 | 北京大学 | Terahertz radiation detector |
| CN103325796A (en) * | 2013-05-30 | 2013-09-25 | 中国电子科技集团公司第十三研究所 | Antenna integrated graphene PIN node terahertz detector |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6100525A (en) * | 1986-07-14 | 2000-08-08 | Lockheed Martin Corporation | Uncooled infrared detector |
| CN103308181A (en) * | 2013-04-27 | 2013-09-18 | 北京理工大学 | VOx terahertz uncooled focal plane detector component |
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Effective date of registration: 20211018 Address after: 201306 room A206, building 1, No. 336, Tianjiao Road, Lingang xinpian District, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Patentee after: AVIC Kaimai (Shanghai) Infrared Technology Co.,Ltd. Address before: 471009 No. 166, Jiefang Road, Henan, Luoyang Patentee before: CHINA AIRBORNE MISSILE ACADEMY |
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