CN104325365B - A kind of method of quick polishing electrostatic chuck - Google Patents
A kind of method of quick polishing electrostatic chuck Download PDFInfo
- Publication number
- CN104325365B CN104325365B CN201410441447.2A CN201410441447A CN104325365B CN 104325365 B CN104325365 B CN 104325365B CN 201410441447 A CN201410441447 A CN 201410441447A CN 104325365 B CN104325365 B CN 104325365B
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- CN
- China
- Prior art keywords
- electrostatic chuck
- polishing
- abrasive disc
- contact surface
- polished
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000005498 polishing Methods 0.000 title claims abstract description 50
- 238000005296 abrasive Methods 0.000 claims abstract description 45
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 15
- PNEYBMLMFCGWSK-UHFFFAOYSA-N al2o3 Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229910001884 aluminium oxide Inorganic materials 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N Silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000003701 mechanical milling Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 18
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 241000252254 Catostomidae Species 0.000 description 5
- 230000004048 modification Effects 0.000 description 3
- 238000006011 modification reaction Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000007792 addition Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static Effects 0.000 description 2
- 210000004369 Blood Anatomy 0.000 description 1
- 210000003229 CMP Anatomy 0.000 description 1
- 210000002304 ESC Anatomy 0.000 description 1
- 210000002381 Plasma Anatomy 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000001627 detrimental Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000004531 microgranule Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000630 rising Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Abstract
The present invention relates to IC manufacturing field, a kind of method particularly with regard to quick polishing electrostatic chuck, by providing a upper surface to be provided with the electrostatic chuck of some projections, and provide an abrasive disc that this electrostatic chuck is polished, and the contact surface of this abrasive disc and this electrostatic chuck for silicon nitride layer, therefore the projection of electrostatic chuck can effectively be repaired, the polishing of a technique warming-up with electrostatic chuck can be combined simultaneously, greatly solve electrostatic chuck of polishing in IC manufacturing field the longest, the problem that cost price is higher.
Description
Technical field
The present invention relates to IC manufacturing field, particularly with regard to a kind of method of quick polishing electrostatic chuck.
Background technology
Plasma etching industrial of the prior art is required to use a kind of very important parts: electrostatic chuck
(Electrostatic chuck is called for short ESC).Electrostatic chuck can provide uniform absorption affinity, does not easily cause the arch of silicon chip
Rising, and keep the flatness of silicon chip surface, increase the yield of this technique, electrostatic chuck has good heat conductivility simultaneously, and
Nonpollution environment.
The surface of electrostatic chuck is provided with many minute protrusions for carrying wafer, and the flatness requirement of this projection is very
Height, if having small difference that the heat conductivility of wafer temperature at this differential position can be caused variant with other positions and
Arching upward of wafer, this small difference is caused can gradually to accumulate in long etching process, and eventually lead
Cause the critical size difference of wafer, and ultimately result in the reduction of wafer yield.Electrostatic chuck surface of the prior art leads to
Often use aluminium oxide and other materials, very rigid, corrosion-resistant, in order to keep the smooth of electrostatic chuck surface projection
Degree, generally uses silicon chip to carry out transmitting polishing, utilizes silicon chip to adsorb on electrostatic chuck, and utilize the small of Electro-static Driven Comb moment
Displacement polishing projection, typically requires the longer time during being somebody's turn to do；Additionally when evenness of silicon wafer is poor, even if polishing is longer
Time also can not reach the ideal effect that technical staff needs, and inhales therefore to the requirement reaching technique may need to change electrostatic
Dish, cost price is the highest.Therefore a kind of method that we need quick polishing electrostatic chuck.
Summary of the invention
In view of the above problems, the present invention provides a kind of method of quick polishing electrostatic chuck, existing by this method solving
There is in technology electrostatic chuck of polishing the longest, the problem that cost price is higher.
The present invention solves the technical scheme that above-mentioned technical problem used:
A kind of method of quick polishing electrostatic chuck, wherein, described method includes:
Step S1, providing an electrostatic chuck, described electrostatic chuck upper surface has some projections；
Step S2, providing an abrasive disc to polish described electrostatic chuck, described abrasive disc contacts with described electrostatic chuck
Face is a smooth plane；
Wherein, described abrasive disc is silicon nitride layer with the contact surface of described electrostatic chuck.
It is also preferred that the left the method for above-mentioned electrostatic chuck of quickly polishing, wherein, described abrasive disc contacts with described electrostatic chuck
Face can be silicon carbide layer.
It is also preferred that the left the method for above-mentioned electrostatic chuck of quickly polishing, wherein, the overall material of described abrasive disc is silicon nitride.
It is also preferred that the left the method for above-mentioned electrostatic chuck of quickly polishing, wherein, the material of the contact surface of described abrasive disc is nitridation
Silicon, and the another side material deviating from this contact surface is silicon.
It is also preferred that the left the method for above-mentioned electrostatic chuck of quickly polishing, wherein, the hardness of described abrasive disc is 90～95HRA.
It is also preferred that the left the method for above-mentioned electrostatic chuck of quickly polishing, wherein, when described electrostatic chuck is polished,
Contact surface is utilized to adsorb the projection of described electrostatic chuck upper surface.
It is also preferred that the left the method for above-mentioned electrostatic chuck of quickly polishing, wherein, the material of described electrostatic chuck is aluminium oxide pottery
Porcelain.
It is also preferred that the left the method for above-mentioned electrostatic chuck of quickly polishing, wherein, described electrostatic chuck hardness is 80～90HRA.
It is also preferred that the left the method for above-mentioned electrostatic chuck of quickly polishing, wherein, before electrostatic chuck is polished, also
Including: being polished described abrasive disc by chemical mechanical milling tech, the flatness controlling described blade contact face is less than
Technique scheme has the advantage that or beneficial effect:
The method of a kind of quick polishing electrostatic chuck disclosed by the invention, by providing a upper surface to be provided with some projections
Electrostatic chuck, and provide an abrasive disc that this electrostatic chuck is polished, and the contact surface of this abrasive disc and this electrostatic chuck for nitrogen
SiClx layer, therefore can repair the projection of electrostatic chuck effectively, simultaneously can be by the polishing of a technique warming-up Yu electrostatic chuck
Combining, greatly solve electrostatic chuck of polishing in IC manufacturing field the longest, cost price is higher
Problem.
Accompanying drawing explanation
By the detailed description non-limiting example made with reference to the following drawings of reading, the present invention and feature thereof, outward
Shape and advantage will become more apparent upon.Labelling identical in whole accompanying drawings indicates identical part the most proportionally to paint
Accompanying drawing processed, it is preferred that emphasis is illustrate the purport of the present invention.
Fig. 1 is that abrasive disc is placed in the present invention schematic cross-section above electrostatic chuck.
Detailed description of the invention
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, but not as limiting to the invention.
The longest for solving polishing electrostatic chuck in prior art, that cost price is higher problem, the invention provides
A kind of method of quick polishing electrostatic chuck.
First, it is provided that an electrostatic chuck 1, electrostatic chuck 1 upper surface is provided with many evenly distributed projections 2 for carrying crystalline substance
Circle.In an embodiment of the present invention, it is desirable to the flatness of this projection 2 is the highest, good to ensure the temperature heat conductivility of wafer
With avoid arching upward of wafer.
Preferably, the material of the above-mentioned material of protruding 2 electrostatic chuck 1 in other words is aluminium oxide ceramics, this electrostatic chuck 1
Hardness is 80～90 HRA (such as 83HRA, 86HRA or 89HRA and other values within the range)；Wherein, HRA is Rockwell hardness
Unit.
Afterwards, it is provided that this electrostatic chuck 1 is polished by an abrasive disc 3, specifically, first with the electrostatic of this electrostatic chuck 1
Effect adsorbs the wherein one side (i.e. contact surface) of this abrasive disc 3, then the contact surface polishing with this abrasive disc 3 with electrostatic chuck 1 polishing should
The projection 2 that electrostatic chuck 1 upper surface has (when polishing electrostatic chuck 1, utilizes on contact surface adsorption electrostatic sucker 1
The projection 2 on surface, and carry out follow-up technique for grinding) so that it is reach the requirement of the high-flatness of projection in technique, wherein this mill
Sheet 3 is smooth plane (being easy to maintain the stability of this technique) and this contact surface with the contact surface of this electrostatic chuck 1 polishing
It it is a silicon nitride layer.
Preferably, in an embodiment of the present invention, when utilizing this abrasive disc 3 that electrostatic chuck 1 is polished, abrasive disc 3 with should
The contact surface of electrostatic chuck 1 can also be silicon carbide layer.It addition, in an embodiment of the present invention, the overall material of this abrasive disc 3 is excellent
Elect silicon nitride as, be satisfied with the requirement that above-mentioned contact surface is silicon nitride layer, but skilled artisan would appreciate that as this mill
The material of the contact surface of sheet 3 is silicon nitride, but the another side material deviating from this contact surface can also make it for silicon as long as meeting
The purpose of invention.
Preferably, the area of this abrasive disc 3 is identical with the area of this electrostatic chuck 1 or is more than the area stating electrostatic chuck 1,
So that being completely covered by this electrostatic chuck 1, reach the purpose of the projection that uniform grinding electrostatic chuck 1 upper surface has.
Preferably, the hardness of this abrasive disc 3 be 90～95HRA (as 90HRA, 92HRA or 94HRA and other within the range
Value).
As it is shown in figure 1, this abrasive disc 3 upper surface grows the thin film 4 of different structure according to the demand of technique, such as silicon oxide film
Deng other silicon materials or photoresistances etc. to meet the working environment of different process requirement, it addition, the lower surface of this abrasive disc 3 is polishing
The contact surface of this electrostatic chuck 1.
In an embodiment of the present invention, abrasive disc 3 is as follows with the reason that the contact surface of electrostatic chuck 1 is silicon nitride layer: because of quiet
The material of state sucker is aluminium oxide ceramics, and the hardness of the aluminium oxide ceramics of the type substantially 80～90HRA, therefore uses general
The polishing poor effect of logical silicon chip, the hardness of such as monocrystalline silicon piece is 70HRA, and its hardness, less than the hardness of static sucker, is carried out
When the projection 2 of this static state sucker is polished by monocrystalline silicon piece, coming off of monocrystalline silicon membrane can be caused, and the hardness of silicon nitride material
Generally 90～95HRA, its hardware is higher than the hardness of aluminium oxide ceramics, and therefore polishing effect can be more preferably；Silicon nitride simultaneously
The preparation method of layer is fairly simple, and (Chemical Vapor Deposition is called for short such as can to use chemical gaseous phase deposition
CVD) technique prepares the uniform silicon nitride layer of formation on original silicon chip or on other substrates；And owing to abrasive disc 3 is permissible
Polish with special equipment, make the flatness of the contact surface of abrasive disc 3 and electrostatic chuck 1 be satisfied with the work of polishing electrostatic chuck 1
Flatness requirement needed for skill, such as cmp (Chemical mechanical polishing is called for short CMP) equipment
Polishing abrasive disc 3 is to obtain the abrasive disc 3 of high-flatness；Additionally this abrasive disc 3 can carry out plasma during polishing electrostatic chuck 1
Body bombards, and further increases the compactness of the contact surface of abrasive disc 3 and electrostatic chuck 1 and increases between electrostatic chuck 1 and abrasive disc 3
Absorbability, it is also possible to the polishing of technique warming-up with electrostatic chuck 1 is together with each other, reduce technique warm-up period,
And reduce the loss of abrasive disc 3, polishing time and cost etc..
In an embodiment of the present invention, it is preferred that the flatness controlling abrasive disc 3 is less than(as
OrAnd other values within the range).
Finally by with the contact surface of this abrasive disc 3 and electrostatic chuck 1 electrostatic chuck 1 being adsorbed and polishing, in this mistake
Cheng Zhong, electrostatic chuck 1 is polished this electrostatic chuck 1 upper surface with the micro-displacement of abrasive disc 3 to abrasive disc 3 release electrostatic producing
Protruding 2, repair the flatness of the projection that electrostatic chuck 1 has, will not produce integrated circuit fabrication process during being somebody's turn to do simultaneously
Having the microgranule of detrimental effects, and bruting process is the shortest, required cost price is relatively low.
In sum, the method for a kind of quick polishing electrostatic chuck disclosed by the invention, by providing a upper surface to be provided with
The electrostatic chuck of some projections, and provide an abrasive disc that this electrostatic chuck is polished, and the connecing of this abrasive disc and this electrostatic chuck
Contacting surface for silicon nitride layer, therefore can effectively repair the projection of electrostatic chuck, simultaneously can be by technique warming-up and an electrostatic
The polishing of sucker combines, and greatly solves electrostatic chuck of polishing in IC manufacturing field the longest, cost
The problem that cost is higher.
By explanation and accompanying drawing, give the exemplary embodiments of the ad hoc structure of detailed description of the invention, based on present invention essence
God, also can make other conversion.Although foregoing invention proposes existing preferred embodiment, but, these contents are not intended as
Limitation.
Above presently preferred embodiments of the present invention is described.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, the equipment and the structure that do not describe in detail the most to the greatest extent are construed as giving reality with the common mode in this area
Execute；Any those of ordinary skill in the art, without departing under technical solution of the present invention ambit, may utilize the disclosure above
Method and technology contents technical solution of the present invention is made many possible variations and modification, or be revised as equivalent variations etc.
Effect embodiment, this has no effect on the flesh and blood of the present invention.Therefore, every content without departing from technical solution of the present invention, foundation
The technical spirit of the present invention, to any simple modification made for any of the above embodiments, equivalent variations and modification, all still falls within the present invention
In the range of technical scheme protection.
Claims (7)
1. the method for a quick polishing electrostatic chuck, it is characterised in that described method includes:
Step S1, providing an electrostatic chuck, described electrostatic chuck upper surface has some projections；
Step S2, providing an abrasive disc to polish described electrostatic chuck, described abrasive disc with the contact surface of described electrostatic chuck is
One smooth plane；When described electrostatic chuck is polished, contact surface is utilized to adsorb the convex of described electrostatic chuck upper surface
Rise；
Wherein, described abrasive disc is silicon nitride layer or silicon carbide layer with the contact surface of described electrostatic chuck.
2. the method for electrostatic chuck of quickly polishing as claimed in claim 1, it is characterised in that the overall material of described abrasive disc is
Silicon nitride.
3. the method for electrostatic chuck of quickly polishing as claimed in claim 1, it is characterised in that the material of the contact surface of described abrasive disc
Matter is silicon nitride, and the another side material deviating from this contact surface is silicon.
4. the method for as claimed in claim 1 electrostatic chuck of quickly polishing, it is characterised in that the hardness of described abrasive disc be 90～
95HRA。
5. the method for electrostatic chuck of quickly polishing as claimed in claim 1, it is characterised in that the material of described electrostatic chuck is
Aluminium oxide ceramics.
6. the method for electrostatic chuck of quickly polishing as claimed in claim 1, it is characterised in that described electrostatic chuck hardness is 80
～90HRA.
7. the method for electrostatic chuck of quickly polishing as claimed in claim 1, it is characterised in that electrostatic chuck is being polished
, also include: being polished described abrasive disc by chemical mechanical milling tech, the flatness controlling described blade contact face is less than before
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410441447.2A CN104325365B (en) | 2014-09-01 | A kind of method of quick polishing electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410441447.2A CN104325365B (en) | 2014-09-01 | A kind of method of quick polishing electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104325365A CN104325365A (en) | 2015-02-04 |
| CN104325365B true CN104325365B (en) | 2017-01-04 |
Family
ID=
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6268994B1 (en) * | 1999-07-09 | 2001-07-31 | Dorsey Gage, Inc. | Electrostatic chuck and method of manufacture |
| CN1365518A (en) * | 1999-05-25 | 2002-08-21 | 东陶机器株式会社 | Electrostatic chuck and treating device |
| JP2005019700A (en) * | 2003-06-26 | 2005-01-20 | Sumitomo Osaka Cement Co Ltd | Method of manufacturing attracting and fixing apparatus |
| CN1975998A (en) * | 2005-11-30 | 2007-06-06 | Ips有限公司 | Static cupule for vacuum processing device, vacuum processing device with the same, and its manufacturing method |
| CN1988128A (en) * | 2005-12-22 | 2007-06-27 | 日本碍子株式会社 | Electrostatic chuck |
| CN102205517A (en) * | 2010-03-31 | 2011-10-05 | 比亚迪股份有限公司 | Method for thinning glass |
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1365518A (en) * | 1999-05-25 | 2002-08-21 | 东陶机器株式会社 | Electrostatic chuck and treating device |
| US6268994B1 (en) * | 1999-07-09 | 2001-07-31 | Dorsey Gage, Inc. | Electrostatic chuck and method of manufacture |
| JP2005019700A (en) * | 2003-06-26 | 2005-01-20 | Sumitomo Osaka Cement Co Ltd | Method of manufacturing attracting and fixing apparatus |
| CN1975998A (en) * | 2005-11-30 | 2007-06-06 | Ips有限公司 | Static cupule for vacuum processing device, vacuum processing device with the same, and its manufacturing method |
| CN1988128A (en) * | 2005-12-22 | 2007-06-27 | 日本碍子株式会社 | Electrostatic chuck |
| CN102205517A (en) * | 2010-03-31 | 2011-10-05 | 比亚迪股份有限公司 | Method for thinning glass |
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