CN104242836B - Radio-frequency power amplifier and electronic system - Google Patents

Radio-frequency power amplifier and electronic system Download PDF

Info

Publication number
CN104242836B
CN104242836B CN201310233233.1A CN201310233233A CN104242836B CN 104242836 B CN104242836 B CN 104242836B CN 201310233233 A CN201310233233 A CN 201310233233A CN 104242836 B CN104242836 B CN 104242836B
Authority
CN
China
Prior art keywords
voltage
transistor
resistance
radio
connects
Prior art date
Application number
CN201310233233.1A
Other languages
Chinese (zh)
Other versions
CN104242836A (en
Inventor
丁兆明
牟家宏
张欣晴
Original Assignee
日月光半导体制造股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日月光半导体制造股份有限公司 filed Critical 日月光半导体制造股份有限公司
Priority to CN201310233233.1A priority Critical patent/CN104242836B/en
Publication of CN104242836A publication Critical patent/CN104242836A/en
Application granted granted Critical
Publication of CN104242836B publication Critical patent/CN104242836B/en

Links

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers

Abstract

The invention discloses a kind of radio-frequency power amplifier and electronic system, the radio-frequency power amplifier includes bias circuit, output-stage circuit and RF compensation circuit.When the first system voltage is more than first voltage threshold value, bias circuit produces the first electric current for rising a little.When the first system voltage is more than second voltage threshold value, then RF compensation circuit is received and carrys out the second electric current for rising a little that autobias circuit is transmitted.When the first system voltage is located at operating voltage interval, the first electric current is more than the second electric current, to cause the static working current of radio-frequency power amplifier independently of the change of the first system voltage.When the first system voltage is more than tertiary voltage threshold value, the first electric current is equal to the second electric current, to cause that bias current is zero current, whereby reaching overvoltage protection radio-frequency power amplifier.

Description

Radio-frequency power amplifier and electronic system
Technical field
The present invention on a kind of radio-frequency power amplifier, and especially with regard to a kind of static working current with stabilization Radio-frequency power amplifier.
Background technology
With world-wide web prosperity after, people receive information with getting used to rapid, high volume, particularly in recent years without The progress of line communication science and technology, personal mobile product, such as mobile phone, personal digital assistant product, with quite surprising speed After popularization, it is desirable to grasp outside instant messages, it is also desirable to can have on instant line and support.Therefore, with reference to Internet The radio area network (Wireless Local Area Network, WLAN) of network and radio communication and the third generation (3G)/the 4th Generation (4G) network exactly meets a scheme of the such demand of people.
In wireless telecommunications handheld device, main dc power consumption comes from radio-frequency power amplifier.Therefore, make to penetrate Frequency power amplifier can have high linearity and will not allow amplification distorted signals, and can simultaneously have high efficiency to extend communication Time, is always the research emphasis of Design of RF Power Amplifier.What is especially widely used in wireless telecommunication system is orthogonal Frequency Division Multiplex (OFDM) digital modulation technique has obvious time-varying ripple bag characteristic, its peak to average power ratio numerical constant (PAPR) it is height far beyond existing wireless telecommunication system, in other words its ripple bag is more violent to time change, therefore to radio frequency work( The linearity of rate amplifier also can be higher.
However, under Prior Art, the radio-frequency power amplifier that U.S. Patent Publication No. US2003/6556082 is provided, Though not influenceed by environment temperature, for the change of cell voltage, the static work of radio-frequency power amplifier is still influenced whether Make the output of electric current.By taking the third generation (3G)/forth generation (4G) cell phone system as an example, the third generation (3G)/forth generation (4G) mobile phone system System has extremely strict requirements for the precision of radio frequency power output.Because the magnitude of voltage of battery of mobile phone has sizable Change, it from 3.2 volts to 4.2 volts, therefore may can influence the precision of the power output of radio-frequency power amplifier.
The content of the invention
The embodiment of the present invention provides a kind of radio-frequency power amplifier, is used to receive and amplify radio-frequency input signals and defeated accordingly Go out radio frequency output signal, the radio-frequency power amplifier includes bias circuit, output-stage circuit and RF compensation circuit.Bias plasma Road is electrically connected with the first system voltage, and the bias circuit is used to provide bias current, wherein when the first system voltage is more than the During one voltage threshold, the bias circuit receives the first electric current for rising a little.Output-stage circuit is electrically connected with second system Voltage and bias circuit, the output-stage circuit receive bias current to be operated in operating bias point.RF compensation circuit is electrical Connection bias circuit, when the first system voltage is more than second voltage threshold value, then RF compensation circuit is received and comes from bias plasma The second electric current that what road was transmitted rise a little, wherein second voltage threshold value are more than first voltage threshold value, and when first System voltage be located at operating voltage it is interval when, the current value of the first electric current more than the current value of the second electric current and its rise a little Slope it is substantially the same, with cause radio-frequency power amplifier static working current independently of the first system voltage change. When the first system voltage is more than tertiary voltage threshold value, the current value of the first electric current is equal to the current value of the second electric current, so that It is zero current to obtain bias current, and whereby to reach overvoltage protection radio-frequency power amplifier, wherein tertiary voltage threshold value is more than Second voltage threshold value.When the first system voltage, to be located at operating voltage interval, then the current value of the first electric current and the second electric current is all Rise with the increase of environment temperature, and its ascensional range is substantially the same, with cause static working current be close to or Equal to the electric current of zero-temperature coefficient.
In one of embodiment of the invention, first voltage threshold value is located between 2.3 volts to 2.5 volts, and second Voltage threshold is located between 2.9 volts to 3 volts, and tertiary voltage threshold value is located between 5.8 volts to 6 volts, and work Make voltage range to be located between 3.2 volts to 4.2 volts.
In one of embodiment of the invention, radio-frequency power amplifier also includes input matching circuit with output matching electricity Road.Input matching circuit is electrically connected with output-stage circuit, and the input matching circuit is used to receive radio-frequency input signals provide The efficiency of input power matching is to output-stage circuit.Output matching circuit is electrically connected with output-stage circuit, the output matching electricity Road is used to export radio frequency output signal and provides the efficiency of power output matching to output-stage circuit.
In one of embodiment of the invention, bias circuit include first resistor, the first transistor, transistor seconds, Second resistance and 3rd resistor.One end connection the first system voltage of first resistor.The electricity of base stage connection first of the first transistor The other end of resistance, the collector connection the first system voltage of the first transistor.The collector connection the first transistor of transistor seconds Base stage, the emitter-base bandgap grading connection ground voltage of transistor seconds.One end of second resistance connects the emitter-base bandgap grading of the first transistor, second resistance The other end connect transistor seconds base stage.One end of 3rd resistor connects the emitter-base bandgap grading of the first transistor.
In one of embodiment of the invention, output-stage circuit includes output transistor and collector resistance.Output crystal The base stage of pipe connects the other end of 3rd resistor, the emitter-base bandgap grading connection ground voltage of output transistor.One end connection of collector resistance Second system voltage, the other end of collector resistance connects the collector of output transistor.Output transistor passes through input matching circuit Receive radio-frequency input signals and after being amplified, radio frequency output signal is exported by output matching circuit.When output transistor Emitter area for N times of emitter area of transistor seconds when and the resistance value of second resistance is the N of the resistance value of 3rd resistor Times when, then the static working current of output transistor is N times of the 3rd electric current, and wherein N is the rational more than 1.
In one of embodiment of the invention, RF compensation circuit include the 4th resistance, the 5th resistance, the 6th resistance, Third transistor, the 4th transistor, the 7th resistance, the 5th transistor, the resistance of the 6th transistor AND gate the 8th.One end of 4th resistance Connection ground voltage.One end connection ground voltage of the 5th resistance.One end connection ground voltage of the 6th resistance.Third transistor Emitter-base bandgap grading connect the other end of the 4th resistance, the base stage of third transistor connects the other end of the 5th resistance.4th transistor Emitter-base bandgap grading connects the other end of the 6th resistance, and the base stage of the 4th transistor connects the base stage of third transistor.One end of 7th resistance The other end of the 5th resistance is connected, wherein the resistance value of the 5th resistance is three times of the resistance value of the 7th resistance, and the 4th electricity Resistance is less than the resistance value of the 7th resistance with the resistance value of the 6th resistance.The emitter-base bandgap grading of the 5th transistor connects the collection of the 4th transistor Pole, the collector of the 5th transistor connects the other end of first resistor to receive the second electric current.The emitter-base bandgap grading connection the of the 6th transistor The other end of seven resistance, the base stage of the 6th transistor connects the base stage of the 5th transistor and the collector of third transistor, and the 6th is brilliant The collector connection the first system voltage of body pipe.One end of 8th resistance connects the collector of third transistor, the 8th resistance it is another End connection the first system voltage.Static working current is caused by adjusting the resistance ratio between the 8th resistance and first resistor It is the electric current close or equal to zero-temperature coefficient.
In one of embodiment of the invention, when the first system voltage is more than tertiary voltage threshold value, by the 5th The transistor of transistor AND gate the 6th with significantly draw the first electric current all as the second electric current, whereby so that bias current is zero Electric current.
In one of embodiment of the invention, when the resistance value of the 8th resistance is substantially equal to the resistance value of first resistor Three times and the first system voltage be located at operating voltage it is interval when, the current value of the first electric current more than the second electric current current value simultaneously And its slope for rising a little is substantially the same, to cause static working current independently of the change of the first system voltage.
In one of embodiment of the invention, the first transistor, transistor seconds, third transistor, the 4th transistor, 5th transistor, the 6th transistor AND gate output transistor are heterogenous junction type bipolar transistor.
The embodiment of the present invention provides a kind of electronic system, and electronic system includes radio-frequency power amplifier with load.Radio frequency work( Rate amplifier receives radio-frequency input signals and output radio frequency output signal.Load is electrically connected with radio-frequency power amplifier, described negative Carry and receive radio frequency output signal.
In sum, the embodiment of the present invention is proposed radio-frequency power amplifier and electronic system, using the teaching of the invention it is possible to provide excellent Temperature compensation effect to cause power output and the static working current of radio-frequency power amplifier relative to temperature change when still Keep stabilization and cause that the static working current of radio-frequency power amplifier, independently of the change of cell voltage, maintains communication whereby High linearity needed for system and will not allow radio frequency output signal distortion.Additionally, the radio-frequency power amplifier of the embodiment of the present invention The efficiency of overvoltage protection can be more reached, to avoid too high cell voltage from causing radio-frequency power amplifier or whole Department of Electronics The infringement of system.
For enable be further understood that feature of the invention and technology contents, refer to below in connection with it is of the invention specifically Bright and accompanying drawing, but these explanations and institute's accompanying drawings are only for illustrating the present invention, rather than interest field of the invention to be appointed What limitation.
Brief description of the drawings
Fig. 1 is the block diagram of the radio-frequency power amplifier according to depicted in exemplifying embodiments.
Fig. 2 is the thin portion circuit diagram of the radio-frequency power amplifier according to depicted in exemplifying embodiments.
Fig. 3 is simulation curve figure of the static working current for the first system voltage according to the embodiment of the present invention.
Fig. 4 is simulation curve figure of first and second electric current for the first system voltage according to the embodiment of the present invention.
Fig. 5 is simulation curve figure of the 3rd electric current for the first system voltage according to the embodiment of the present invention.
Fig. 6 is simulation curve figure of the static working current for the first system voltage according to the embodiment of the present invention.
Fig. 7 is simulation curve figure of first and second electric current for the first system voltage according to the embodiment of the present invention.
Fig. 8 is simulation curve figure of the 3rd electric current for the first system voltage according to the embodiment of the present invention.
Fig. 9 is simulation curve figure of the static working current for temperature according to the embodiment of the present invention.
Figure 10 is simulation curve figure of first and second electric current for temperature according to the embodiment of the present invention.
Figure 11 is simulation curve figure of the 3rd electric current for temperature according to the embodiment of the present invention.
Figure 12 is mould of the static working current for the first system voltage under temperature scanning according to the embodiment of the present invention Pseudocurve figure.
Figure 13 is the block diagram of the electronic system according to the embodiment of the present invention.
Wherein, description of reference numerals is as follows:
100、200:Radio-frequency power amplifier
110:Bias circuit
120:Output-stage circuit
130:RF compensation circuit
140:Input matching circuit
150:Output matching circuit
1300:Electronic system
1310:Radio-frequency power amplifier
1320:Load
CIN:Input capacitance
COUT:Output capacitance
CV1、CV2、CV3、CV4、CV5、CV6:Curve
R1:First resistor
GND:Ground voltage
I1:First electric current
I2:Second electric current
I3:3rd electric current
I4:4th electric current
I5:5th electric current
IB:Bias current
ICQ:Static working current
Q1:The first transistor
Q2:Transistor seconds
Q3:Third transistor
Q4:4th transistor
Q5:5th transistor
Q6:6th transistor
QW:Output transistor
R1:First resistor
R2:Second resistance
R3:3rd resistor
R4:4th resistance
R5:5th resistance
R6:6th resistance
R7:7th resistance
R8:8th resistance
RW:Collector resistance
RFIN:Radio-frequency input signals
RFOUT:Radio frequency output signal
VBE4、VBE6:Base emitter voltage
VSS:The first system voltage
VCC:Second system voltage
Specific embodiment
Various exemplary embodiments will be more fully described referring to alterations below, show in alterations Exemplary embodiments.However, concept of the present invention may embody in many different forms, and should not be construed as limited by institute herein The exemplary embodiments of elaboration.Specifically, there is provided these exemplary embodiments cause that the present invention will be detailed and complete, and will The category of concept of the present invention is fully passed on to those who familiarize themselves with the technology.In all schemas, Ceng Ji areas can be lavished praise on oneself in order to clear Size and relative size.Similar numeral indicates similar component all the time.
Although it should be understood that various elements, these yuan may be described using term first, second, third, etc. herein Part should not be limited by these terms.These terms are to distinguish an element with another element.Therefore, first yuan for being discussed herein below Part can be described as teaching of second element without departing from concept of the present invention.As used herein, term " and/or " include it is associated The all combinations for listing any one of project and one or more.
(embodiment of radio-frequency power amplifier)
In wireless telecommunications handheld device, main dc power consumption comes from radio-frequency power amplifier.Therefore, make to penetrate Frequency power amplifier can have high linearity and will not allow amplification distorted signals, and can simultaneously have high efficiency to extend communication Time, is always the research emphasis of Design of RF Power Amplifier.Present invention proposes a kind of not by environment temperature and battery The radio-frequency power amplifier of voltage influence, to meet the demand in communication system for high linearity.
Fig. 1 is refer to, Fig. 1 is that the block of the radio-frequency power amplifier according to depicted in exemplifying embodiments is illustrated Figure.As shown in figure 1, radio-frequency power amplifier 100 include bias circuit 110, output-stage circuit 120, RF compensation circuit 130, Input matching circuit 140 and output matching circuit 150.Bias circuit 110 is electrically connected with output-stage circuit 120 and bias circuit 110 are electrically connected with the first system voltage VSS (that is, cell voltage).Output-stage circuit 120 is electrically connected to input matching circuit Between 140 and output matching circuit 150, and output-stage circuit 120 is electrically connected with second system voltage VCC.RF compensation electricity Road 130 is electrically connected with bias circuit 110.It should be understood that input matching circuit 140 is used to receive radio-frequency input signals RFIN provide The efficiency of input power matching to output-stage circuit 120, output matching circuit 150 be used to export radio frequency output signal RFOUT and The efficiency of power output matching is provided to output-stage circuit 120.
On bias circuit 110, bias circuit 110 is used to provide bias current IB to output-stage circuit 120, when with penetrating After the electronic system of frequency power amplifier 100 starts, the first system voltage VSS can slowly rise and when the first system voltage VSS starts during more than first voltage threshold value (it is located between 2.3 volts to 2.5 volts), and bias circuit 110 can be initially entered Normal operating conditions and the first electric current I1 (flowing into bias circuit 110 from one end of the first system voltage VSS) is received, with the The magnitude of voltage of one system voltage VSS rises, and the first electric current I1 also can a little rise and show proportional relation.On output stage electricity Road 120, the second system voltage VCC received by output-stage circuit 120 is usually by DC-DC converter (DC-DC Converter (General Purpose) or by the universal input of transceiver IC (Transceiver IC) are exported Input/Output, GPIO) fixed voltage is provided.Furthermore, output-stage circuit 120 receives bias current IB to be operated in one Operating bias point (operation bias point).On RF compensation circuit 130, it is used to when the first system voltage VSS is big In second voltage threshold value (it is located between 2.9 volts to 3 volts), then RF compensation circuit 130 can come into operation and receive Carry out the second electric current I2 that autobias circuit 110 is transmitted, wherein the second electric current I2 can be with the rising of the first system voltage VSS The trend that presentation rises a little.It is noted that when the first system voltage VSS is located at (such as 3.2 volts of operating voltage interval To between 4.2 volts) when, then the current value of the first electric current I1 more than the second electric current I2 current value and its rise a little it is oblique Rate is substantially the same, to cause the static working current of radio-frequency power amplifier 100 independently of the change of the first system voltage VSS Change.
Additionally, in terms of overvoltage protection, the radio-frequency power amplifier 100 of present invention is when the first system voltage When VSS is more than tertiary voltage threshold value (it is located between 5.8 volts to 6 volts), then the current value of the first electric current I1 is equal to the The current value of two electric current I2, to cause that bias current IB is zero current and then output-stage circuit 120 is fallen in closing, whereby reaching The effect of voltage protection radio-frequency power amplifier 100, wherein tertiary voltage threshold value are more than second voltage threshold value.
In addition, in terms of temperature compensation effect, as the first system voltage VSS, to be located at operating voltage interval, then the first electric current I1 all rises with the current value of the second electric current I2 with the increase of environment temperature, and its ascensional range is substantially the same, from And to cause that static working current (that is, output current of output-stage circuit 120) is the electricity close or equal to zero-temperature coefficient Stream, that is to say, that static working current will not be changed with the change of environment temperature.In simple terms, in present invention RF compensation circuit enable to whole radio-frequency power amplifier independently of the change of environment temperature, (first is cell voltage System voltage VSS) change, and when cell voltage is too high, RF compensation circuit 130 can draw away the first whole electric currents I1 (that is, the current value of the second electric current I2 is equal to current value of the first electric current I1) is closing output-stage circuit 120, Jin Erbao Shield radio-frequency power amplifier 100.Accordingly, RF compensation circuit 130 can make the radio-frequency power amplifier 100 can have High Linear Degree and will not allow amplification distorted signals, and can simultaneously have high efficiency to extend communication time.
It should be noted that, the positive temperature coefficient described in present invention indicates its physical quantity (such as magnitude of voltage, current value or electricity Resistance) it is proportional and temperature between, that is to say, that when temperature rises or falls, its physical quantity can be with temperature on Rise or decline;Negative temperature coefficient described in present invention is indicated between its physical quantity and temperature inversely, that is to say, that When temperature rises or falls, its physical quantity can be down or up with temperature.Zero-temperature coefficient described in present invention It is separate relation and temperature between to indicate its physical quantity (such as magnitude of voltage, current value or resistance value), that is to say, that work as temperature When degree rises or falls, its physical quantity can't rise or fall with temperature.
In order to illustrate in greater detail the operation workflow of radio-frequency power amplifier of the present invention 100, will lift below multiple One being further described at least in embodiment.
In ensuing multiple embodiments, the part different from above-mentioned Fig. 1 embodiments, and remaining clipped will be described Part with above-mentioned Fig. 1 embodiments is identical.Additionally, to illustrate conventionally, similar reference numeral or label instruction are similar Element.
(another embodiment of radio-frequency power amplifier)
Fig. 2 is refer to, Fig. 2 is the thin portion circuit of the radio-frequency power amplifier according to depicted in exemplifying embodiments Schematic diagram.From unlike above-mentioned Fig. 1 embodiments, in the radio-frequency power amplifier 200 of Fig. 2 embodiments, bias circuit 110 is wrapped Include first resistor R1, the first transistor Q1, transistor seconds Q2, second resistance R2 and 3rd resistor R3.Output-stage circuit 120 is wrapped Include output transistor QW.RF compensation circuit 130 includes the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8, third transistor Q3, the 4th transistor Q4, the 5th transistor Q5, the 6th transistor Q6.First resistor R1 One end connection the first system voltage VSS.The other end of the base stage connection first resistor R1 of the first transistor Q1, the first transistor The collector connection the first system voltage VSS of Q1.The base stage of the collector connection the first transistor Q1 of transistor seconds Q2, the second crystal The emitter-base bandgap grading connection ground voltage GND of pipe Q2.One end of second resistance R2 connects the emitter-base bandgap grading of the first transistor Q1, second resistance R2's The base stage of other end connection transistor seconds Q2.One end of 3rd resistor R3 connects the emitter-base bandgap grading of the first transistor Q1.Output crystal The other end of the base stage connection 3rd resistor R3 of pipe QW, the emitter-base bandgap grading connection ground voltage GND of output transistor QW.The present embodiment Radio-frequency power amplifier 200 also includes a collector resistance RW, one end connection second system voltage VCC of wherein collector resistance RW, The collector of the other end connection output transistor QW of collector resistance RW.Output transistor QW is received by input matching circuit 140 Radio-frequency input signals RFIN and after being amplified, radio frequency output signal RFOUT is exported by output matching circuit 150.Work as output The emitter area of transistor QW for N times of emitter area of transistor seconds Q2 when and the resistance value of second resistance R2 is the 3rd electricity When hindering N times of resistance value of R3, then the static working current ICQ of output transistor QW is N times of the 3rd electric current I3, and wherein N is Rational more than 1.In the present embodiment, the first transistor Q1, transistor seconds Q2, third transistor Q3, the 4th transistor Q4, the 5th transistor Q5, the 6th transistor Q6 and output transistor QW are heterogenous junction type bipolar transistor, therefore can not needed The technique of other kinds of transistor (such as false type high-velocity electrons movement transistor), and then can save in communication system before radio frequency The manufacturing cost of terminal circuit.
One end of 4th resistance R4 connects ground voltage GND.One end of 5th resistance R5 connects ground voltage GND.6th One end of resistance R6 connects ground voltage GND.The emitter-base bandgap grading of third transistor Q3 connects the other end of the 4th resistance R4, the 3rd crystal The base stage of pipe Q3 connects the other end of the 5th resistance R5.The emitter-base bandgap grading of the 4th transistor Q4 connects the other end of the 6th resistance R6, the The base stage of the base stage connection third transistor Q3 of four transistor Q4.One end of 7th resistance R7 connects the another of the 5th resistance R5 End.It is noted that the resistance value of the 5th resistance R5 is three times of the resistance value of the 7th resistance R7, this resistance value be by Design and determine, and the 4th resistance R4 and the 6th resistance R6 resistance value be much smaller than the 7th resistance R7 resistance value.5th The emitter-base bandgap grading of transistor Q5 connects the collector of the 4th transistor Q4, the other end of the collector connection first resistor R1 of the 5th transistor Q5 To receive the second electric current I2.The emitter-base bandgap grading of the 6th transistor Q6 connects the other end of the 7th resistance R7, the base stage of the 6th transistor Q6 Connect the base stage of the 5th transistor Q5 and the collector of third transistor Q3, the collector connection the first system voltage of the 6th transistor Q6 VSS.One end of 8th resistance R8 connects the collector of third transistor Q3, the other end connection the first system voltage of the 8th resistance R8 VSS.By adjust the 8th resistance R8 and first resistor R1 between resistance ratio come cause static working current ICQ be close to or Equal to the electric current of zero-temperature coefficient.
Next to be taught, be the operation principle for further illustrating radio-frequency power amplifier 200.In the present embodiment, Be 2.4 volts with first voltage threshold value, second voltage threshold value be 2.9 volts with tertiary voltage threshold value be 6 volts be one Example elaborates.
After the electronic system with radio-frequency power amplifier 200 starts, the first system voltage VSS slowly can rise Enter operating voltage interval (between 3.2 volts to 4.2 volts), when cell voltage (that is, the first system voltage VSS) starts to be more than During first voltage threshold value (such as 2.4 volts), then have the first electric current I1 and produce and flow through first resistor R1.However, 2.4 volts Cell voltage be also not enough to start whole RF compensation circuit 130, therefore the 3rd electric current I3 can be equal to the first electric current I1. Persistently rise as the first system voltage VSS and during more than second voltage threshold value (such as 2.9 volts), battery voltage value foot so To start transistor Q3~Q4, therefore RF compensation circuit 130 can start to draw the portion of electrical current of the first electric current I1, i.e. by 5th transistor Q5 and the 4th transistor Q4 and the 6th resistance R6 draws electric current.Furthermore, it is understood that in temperature compensation effect side Face, designer can it is rational assume under, shown in the first electric current such as formula (1), wherein symbol VBE for represent the first transistor Q1 with The base emitter voltage of transistor seconds simultaneously assumes that both is equivalent, and rationally neglected the voltage of second resistance R2 in formula (1) Drop.Furthermore, first rationally ignore the base current of third transistor Q3 and the 4th transistor Q4 herein, and ignore the 6th resistance Effect, therefore can learn that the 5th electric current I5 is as shown in formula (2).Therefore, the emitter voltage of the 6th transistor Q6 is the 5th electric current I5 Current value be multiplied by the resistance value of the 5th resistance R5 and the 7th resistance R7, and then can derive flow through the 8th resistance R8 the 4th electricity Stream I4, as shown in formula (3), wherein symbol VBE4 and VBE6 is the base emitter voltage of the 4th transistor Q4 and the 6th transistor Q6. In the present embodiment, further the 4th resistance R4 is designed as three times (as shown in formulas (4)) of the 6th resistance R6, therefore the second electric current I2 can be equal to K times of the 4th electric current I4 (because relation of current mirror mapping), and the 4th electric current I4 can be considered as the second electric current I2 by it Mapping.Then, because the 3rd electric current I3 subtracts the second electric current I2 equal to the first electric current I1, it is derived as shown in formula (5).By In, static working current ICQ amplifies the electric current for mapping by the 3rd electric current I3 by current mirror, that is, when output transistor QW's Emitter area for N times of emitter area of transistor seconds Q2 when and the resistance value of second resistance R2 is the electricity of 3rd resistor R3 At N times of resistance, then the static working current ICQ of output transistor QW is N times of the 3rd electric current I3, and wherein N is having more than 1 Reason number.Therefore, static working current ICQ is carried out to after the differentiating of temperature parameter, it is to be understood that by the 8th resistance R8 with Resistance proportion between first resistor R1 be suitably designed transistor size, you can so that radio-frequency power amplifier 200 exists The static working current ICQ that operating voltage interval (such as 3.2 volts to 4.2 volts) is exported is close or equal to zero-temperature coefficient Electric current, therefore the radio-frequency power amplifier 200 of present invention have splendid temperature compensation effect, with independently of environment temperature Influence.Wherein it is noted that in the present embodiment, the resistance value of the 5th resistance R5 is about the resistance value of the 7th resistance R7 Three times, the resistance value of the 4th resistance R4 is three times of the resistance value of the 6th resistance R6, and the 5th resistance R5 and the 7th resistance R7 All it is much larger than the 6th resistance R6 and the 4th resistance R4.
I1=(VSS-2VBE)/R1 formulas (1)
I5=VBE4/R5 formulas (2)
I4=(VSS- (VBE4 × ((R7+R5)/R5)+VBE6)/R4) formula (3)
R4=3 × R6 formulas (4)
I3=I1–I2=I1–k×I4
=((VSS-2VBE)/R1)-k × (VSS- (VBE4 × ((R7+R5)/R5)+VBE6)/R4) formula (5)
If additionally, after the 3rd electric current I3 in formula (5) the first system voltage VSS is differentiated, can learn When the 8th resistance R8 is designed as into the three times of first resistor R1 and when the first system voltage be located at operating voltage it is interval when, then the The slope that current value of the current value of one electric current I1 more than the second electric current I2 and two electric currents rise a little is identical, therefore radio frequency work( The static working current ICQ that rate amplifier 200 is exported will not only be migrated with the change of environment temperature, and more can Independently of the change of the first system voltage VSS, the radio-frequency power amplifier 200 of present invention has splendid stability with height The linearity.
Furthermore, the radio-frequency power amplifier 200 of present invention more can reach overvoltage by RF compensation circuit 130 The function of protection, that is, constantly rise and more than tertiary voltage because of not clear abnormal factorses (such as abrupt voltage wave) when cell voltage During threshold value (such as 6 volts), then radio-frequency power amplifier 200 can by the 5th transistor Q5 in RF compensation circuit 130 with 6th transistor Q6 with significantly draw the first electric current I1 all as the second electric current I2, and then make the 3rd electric current be zero electricity Stream.Because when the 3rd electric current I3 turns into zero current, then bias current IB and static working current ICQ can be simultaneously zero electricity Stream, therefore this can be equivalent to the output-stage circuit 120 for closing radio-frequency power amplifier 200.
In order to better understand effect of present invention, will below enumerate simulation curve figure and carry out further proof diagram 2 in fact Apply the radio-frequency power amplifier 200 in example.Referring to Fig. 2~Fig. 5, Fig. 3 is the quiescent operation according to the embodiment of the present invention Simulation curve figure of the electric current for the first system voltage.Fig. 4 is first and second electric current according to the embodiment of the present invention for The simulation curve figure of one system voltage.Fig. 5 is simulation of the 3rd electric current for the first system voltage according to the embodiment of the present invention Curve map.As shown in figure 3, transverse axis is the first system voltage (unit is volt), the longitudinal axis is that (unit is static working current ICQ Milliampere), when cell voltage changes between 3.2 volts to 4.2 volts, it is to be understood that the change phase of static working current ICQ Local small, its static working current meets the demand of current communication system relative to the stability that cell voltage changes.In detail For, as shown in figure 4, wherein curve CV1 is the first electric current I1 and curve CV2 is the second electric current I2, transverse axis is the first system Voltage (unit is volt), the longitudinal axis is electric current (unit is milliampere), in cell voltage in 3.2 volts to 4.2 volts of anaplasia When dynamic, it is to be understood that the current value of the first electric current I1 and the second electric current I2 all can a little rise with the increase of cell voltage, and And its slope for rising is substantially equal.Because the 3rd electric current I3 subtracts the second electric current I2 equal to the first electric current I1, such as Fig. 5 It is shown, transverse axis be the first system voltage (unit is volt), the longitudinal axis be the 3rd electric current (unit is milliampere), cell voltage in When being changed between 3.2 volts to 4.2 volts, the amplitude of variation of the 3rd electric current I3 is approximately equal to 50 micromicroamperes, therefore this is in radio frequency work( The current source current of quite stable is can be considered in rate amplifier 200.
In terms of overvoltage protection, Fig. 6~Fig. 8 is refer to, Fig. 6 is the static working current pair according to the embodiment of the present invention In the simulation curve figure of the first system voltage.Fig. 7 is first and second electric current according to the embodiment of the present invention for the first system The simulation curve figure of voltage.Fig. 8 is simulation curve figure of the 3rd electric current for the first system voltage according to the embodiment of the present invention. In the figure 7, curve CV3 represents the first electric current I1 and curve CV4 represents the second electric current I2, as shown in Figure 7, in the present embodiment In, when the first system voltage VSS increases to first voltage threshold value, such as 2.4 volts, the first electric current I1 can start to rise a little And now the second electric current I2 is produced.Next, when the first system voltage VSS increases to second voltage threshold value, such as 2.9 volts When special, the second electric current I2 can start to rise a little.It is worth noting that, in cell voltage between 3.2 volts to 4.2 volts When, the slope that curve CV3 and CV4 rises a little is substantially the same.Then, due to the 5th crystal in RF compensation circuit 130 Pipe Q5 and the 4th transistor Q4 configurations connect relation to change, therefore when cell voltage is more than 4.2 volts, curve CV4 (the second electric currents I2) slope for rising change also slowly is big.Therefore, when cell voltage increases to tertiary voltage threshold value, such as 5.8 volts, curve CV4 starts, current value that it represent second electric current I2 current value equal to first electric current I1 Chong Die with curve CV3, that is, penetrates Frequency compensation circuit 130 can draw the first whole electric current I1 as the second electric current I2.Next, as it can be observed in the picture that the 3rd electric current The phenomenon of I3 presentation zero currents when cell voltage is located at 5.8 volts, and this meeting and then so that radio-frequency power amplifier 200 Bias current IB and static working current ICQ can all drop to zero current (as shown in Figure 6).
In terms of temperature compensation effect, Fig. 9~Figure 12 is refer to, Fig. 9 is the quiescent operation electricity according to the embodiment of the present invention Flow the simulation curve figure for temperature.Figure 10 is bent for the simulation of temperature according to first and second electric current of the embodiment of the present invention Line chart.Figure 11 is simulation curve figure of the 3rd electric current for temperature according to the embodiment of the present invention.Figure 12 is according to of the invention real Apply the simulation curve figure of the static working current under temperature scanning for the first system voltage of example.First, in Fig. 10, curve CV5 represents the first electric current I1 and curve CV6 represents the second electric current I2, environment temperature minus 55 degree Celsius to 125 degree Celsius it Between simulation under, it is to be understood that the first electric current I1 and the second electric current I2 can all rise a little and its rise the substantial phase of slope Together.Therefore, the 3rd electric current I3 (as shown in figure 11) minus 55 degree to 125 degree Celsius Celsius variable quantity be less than 5 micromicroamperes, therefore As shown in figure 9, static working current ICQ has at a relatively high stability under the change of environment temperature.Next, examining at the same time It is that the first system voltage VSS is set in 3.2 volts to 4.2 volts in fig. 12 under the change of amount cell voltage and environment temperature It is set between minus 55 degree to 125 degree Celsius Celsius between spy and by environment temperature, the static work of radio-frequency power amplifier 200 Make electric current ICQ and under change, remain able to show high stability while in face of cell voltage and environment temperature, meet very much In communication system now to the demand of stability.
(embodiment of electronic system)
Figure 13 is refer to, Figure 13 is the block diagram of the electronic system according to the embodiment of the present invention.Electronic system 1300 Including radio-frequency power amplifier 1310 and load 1320.Radio-frequency power amplifier 1310 receives radio-frequency input signals RFIN and output Radio frequency output signal RFOUT is to load 1320, that is, radio-frequency power amplifier 1310 is after coupling system voltage, can provide one steady Fixed power output extremely loads 1320.Radio-frequency power amplifier 1310 can be the radio-frequency power in above-mentioned Fig. 1 and Fig. 2 embodiments One of amplifier 100 and 200, and it is used to provide the power output of stabilization to load.Electronic system 1300 can be each System in the electronic installation of type, electronic installation can be such as hand-held device or mobile device etc..
(possibility effect of embodiment)
In sum, the embodiment of the present invention is proposed radio-frequency power amplifier and electronic system, using the teaching of the invention it is possible to provide excellent Temperature compensation effect to cause power output and the static working current of radio-frequency power amplifier relative to temperature change when still Keep stabilization and cause that the static working current of radio-frequency power amplifier, independently of the change of cell voltage, maintains communication whereby High linearity needed for system and will not allow radio frequency output signal distortion.
An at least embodiment in present invention multiple embodiment, radio-frequency power amplifier can more reach overvoltage guarantor The efficiency of shield, to avoid too high cell voltage from causing the infringement of radio-frequency power amplifier or whole electronic system.
Embodiments of the invention are the foregoing is only, it simultaneously is not used to limit to the scope of the claims of the invention.

Claims (10)

1. a kind of radio-frequency power amplifier, is used to receive and amplify a radio-frequency input signals and exports radio frequency output letter accordingly Number, it is characterised in that the radio-frequency power amplifier includes:
One bias circuit, is electrically connected with a first system voltage, and the bias circuit is used to provide a bias current, wherein when this When one system voltage is more than a first voltage threshold value, the bias circuit receives one first electric current for rising a little;
One output-stage circuit, is electrically connected with a second system voltage and the bias circuit, and the output-stage circuit receives the bias plasma Flow to be operated in an operating bias point;And
One RF compensation circuit, is electrically connected with the first system voltage and the bias circuit, when the first system voltage is more than one During second voltage threshold value, then the RF compensation circuit receives rise a little one second electricity transmitted from the bias circuit Stream, wherein the second voltage threshold value are more than the first voltage threshold value, and when the first system voltage is located at a work electricity When between nip, the current value of first electric current is more than the current value of second electric current and its slope for rising a little is identical, with So that change of the static working current of the radio-frequency power amplifier independently of the first system voltage,
Wherein when the first system voltage is more than a tertiary voltage threshold value, the current value of first electric current is equal to second electricity The current value of stream, to cause that the bias current is zero current, whereby to reach the overvoltage protection radio-frequency power amplifier, wherein The tertiary voltage threshold value is more than the second voltage threshold value,
Wherein when the first system voltage is located at, the operating voltage is interval, then the current value of first electric current and second electric current is all Rise with the increase of environment temperature, and its ascensional range is identical, with cause the static working current be close or equal to The electric current of zero-temperature coefficient.
2. radio-frequency power amplifier as claimed in claim 1, wherein the first voltage threshold value are located at 2.3 volts to 2.5 volts Between spy, the second voltage threshold value is located between 2.9 volts to 3 volts, and the tertiary voltage threshold value is located at 5.8 volts to 6 Between volt, and the operating voltage is interval between 3.2 volts to 4.2 volts.
3. radio-frequency power amplifier as claimed in claim 1, also includes:
One input matching circuit, is electrically connected with the output-stage circuit, and the input matching circuit is used to receive the radio-frequency input signals To provide the efficiency of input power matching to the output-stage circuit;And
One output matching circuit, is electrically connected with the output-stage circuit, and the output matching circuit is used to export the radio frequency output signal And the efficiency of power output matching is provided to the output-stage circuit.
4. radio-frequency power amplifier as claimed in claim 3, wherein bias circuit includes:
One first resistor, its one end connects the first system voltage;
One the first transistor, its base stage connects the other end of the first resistor, and its collector connects the first system voltage;
One transistor seconds, its collector connects the base stage of the first transistor, and its emitter-base bandgap grading connects a ground voltage;
One second resistance, its one end connects the emitter-base bandgap grading of the first transistor, and its other end connects the base stage of the transistor seconds;With And
One 3rd resistor, its one end connects the emitter-base bandgap grading of the first transistor.
5. radio-frequency power amplifier as claimed in claim 4, wherein output-stage circuit includes:
One output transistor, its base stage connects the other end of the 3rd resistor, and its emitter-base bandgap grading connects the ground voltage;And
One collector resistance, its one end connects the second system voltage, and its other end connects the collector of the output transistor,
Wherein the output transistor is defeated by this after the input matching circuit receives the radio-frequency input signals and is amplified Go out match circuit and export the radio frequency output signal,
Wherein when N times of the emitter area that the emitter area of the output transistor is the transistor seconds and the second resistance When resistance value is N times of the resistance value of the 3rd resistor, then the static working current of the output transistor is N times of the 3rd electricity Stream, wherein N is the rational more than 1.
6. radio-frequency power amplifier as claimed in claim 5, wherein RF compensation circuit includes:
One the 4th resistance, its one end connects the ground voltage;
One the 5th resistance, its one end connects the ground voltage;
One the 6th resistance, its one end connects the ground voltage;
One third transistor, its emitter-base bandgap grading connects the other end of the 4th resistance, and its base stage connects the other end of the 5th resistance;
One the 4th transistor, its emitter-base bandgap grading connects the other end of the 6th resistance, and its base stage connects the base stage of the third transistor;
One the 7th resistance, its one end connects the other end of the 5th resistance, and the wherein resistance value of the 5th resistance is the 7th electricity Three times of the resistance value of resistance, and the 4th resistance is less than the resistance value of the 7th resistance with the resistance value of the 6th resistance;
One the 5th transistor, its emitter-base bandgap grading connects the collector of the 4th transistor, its collector connect the other end of the first resistor with Receive second electric current;
One the 6th transistor, its emitter-base bandgap grading connects the other end of the 7th resistance, its base stage connect the base stage of the 5th transistor with The collector of the third transistor, its collector connects the first system voltage;And
One the 8th resistance, its one end connects the collector of the third transistor, and its other end connects the first system voltage,
Wherein by adjusting the resistance ratio between the 8th resistance and the first resistor come so that the static working current is to connect Closely or equal to the electric current of zero-temperature coefficient.
7. radio-frequency power amplifier as claimed in claim 6, wherein when the first system voltage is more than the tertiary voltage thresholding During value, by the transistor of the 5th transistor AND gate the 6th with significantly draw first electric current all as this second electricity Stream, whereby so that the bias current is zero current.
8. radio-frequency power amplifier as claimed in claim 7, wherein when the resistance value of the 8th resistance is equal to the first resistor The three times of resistance value and the first system voltage be located at the operating voltage it is interval when, the current value of first electric current more than this second The current value of electric current and its slope for rising a little is identical, to cause the static working current independently of the first system voltage Change.
9. it is radio-frequency power amplifier as claimed in claim 6, the wherein the first transistor, the transistor seconds, the 3rd brilliant Body pipe, the 4th transistor, the 5th transistor, the 6th transistor AND gate output transistor are hetero-junction bipolar crystal Pipe.
10. a kind of electronic system, it is characterised in that including:
One radio-frequency power amplifier as claimed in claim 1, the radio-frequency power amplifier receives a radio-frequency input signals and defeated Go out a radio frequency output signal;And
One load, is electrically connected with the radio-frequency power amplifier, the load-receipt radio frequency output signal.
CN201310233233.1A 2013-06-13 2013-06-13 Radio-frequency power amplifier and electronic system CN104242836B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310233233.1A CN104242836B (en) 2013-06-13 2013-06-13 Radio-frequency power amplifier and electronic system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310233233.1A CN104242836B (en) 2013-06-13 2013-06-13 Radio-frequency power amplifier and electronic system
CN201710385737.3A CN107257233B (en) 2013-06-13 2013-06-13 Radio frequency power amplifier

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201710385737.3A Division CN107257233B (en) 2013-06-13 2013-06-13 Radio frequency power amplifier

Publications (2)

Publication Number Publication Date
CN104242836A CN104242836A (en) 2014-12-24
CN104242836B true CN104242836B (en) 2017-06-20

Family

ID=52230333

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201710385737.3A Active CN107257233B (en) 2013-06-13 2013-06-13 Radio frequency power amplifier
CN201310233233.1A CN104242836B (en) 2013-06-13 2013-06-13 Radio-frequency power amplifier and electronic system

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201710385737.3A Active CN107257233B (en) 2013-06-13 2013-06-13 Radio frequency power amplifier

Country Status (1)

Country Link
CN (2) CN107257233B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105743450A (en) * 2016-01-29 2016-07-06 上海华虹宏力半导体制造有限公司 Radio frequency power amplifier

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1454409A (en) * 2000-08-11 2003-11-05 新加坡国立大学 Programmable radio frequency predistortion linearizer and method thereof
CN101079598A (en) * 2006-04-10 2007-11-28 松下电器产业株式会社 High-frequency power amplifier and communication device
CN101478293A (en) * 2008-12-02 2009-07-08 锐迪科微电子(上海)有限公司 Temperature compensation power amplifier circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4329598A (en) * 1980-04-04 1982-05-11 Dbx, Inc. Bias generator
DE3112045C2 (en) * 1981-03-24 1987-12-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
US6678507B1 (en) * 2000-08-31 2004-01-13 Hitachi, Ltd. Power amplifier system and mobile communication terminal device
JP2005101734A (en) * 2003-09-22 2005-04-14 Toshiba Corp High output amplifier circuit
JP2005223437A (en) * 2004-02-03 2005-08-18 Nec Compound Semiconductor Devices Ltd Bias circuit
JP2007258949A (en) * 2006-03-22 2007-10-04 Matsushita Electric Ind Co Ltd High frequency power amplifier
US8169203B1 (en) * 2010-11-19 2012-05-01 Nxp B.V. Low dropout regulator
CN103872992B (en) * 2012-12-10 2017-02-08 环旭电子股份有限公司 Electronic system, radio frequency power amplifier and output power compensation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1454409A (en) * 2000-08-11 2003-11-05 新加坡国立大学 Programmable radio frequency predistortion linearizer and method thereof
CN101079598A (en) * 2006-04-10 2007-11-28 松下电器产业株式会社 High-frequency power amplifier and communication device
CN101478293A (en) * 2008-12-02 2009-07-08 锐迪科微电子(上海)有限公司 Temperature compensation power amplifier circuit

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
《A framework for investigating radio resource management algorithms in TD-SCDMA systems》;Mugen Peng,et al;《IEEE Communications Magazine》;20050630;第43卷(第6期);全文 *
《Temperature compensating bias circuit for GaAs HBT RF power amplifiers with stage bypass architecture》;J.Jeon,et al.;《Electronics Letters》;20080911;第44卷(第19期);全文 *
《应用于TD-SCDMA的微型智能线性功率放大器的研究与实现》;程维维;《中国优秀硕士学位论文全文数据库 信息科技辑》;20071015(第4期);全文 *
《预失真射频功率放大器的研究》;冯永生;《中国博士学位论文全文数据库 信息科技辑》;20071115(第5期);全文 *

Also Published As

Publication number Publication date
CN107257233A (en) 2017-10-17
CN104242836A (en) 2014-12-24
CN107257233B (en) 2020-10-30

Similar Documents

Publication Publication Date Title
CN106416058B (en) For detecting the system and method for being coupled to the load impedance of transducer device of audio frequency apparatus
JP6571071B2 (en) Envelope tracker with variable boost power supply voltage
Wambacq et al. Distortion analysis of analog integrated circuits
CN101231535B (en) Method and apparatus for overshoot and undershoot errors correction in analog low pressure difference linear voltage regulator
Lopez et al. Design of highly efficient wideband RF polar transmitters using the envelope-tracking technique
TWI280736B (en) High frequency power amplifier circuit device
CN101902207B (en) Bias circuit, high-power amplifier, and portable information terminal
CN1838530B (en) High frequency power amplifier circuit
TW381370B (en) Folded-cascode amplifier stage
Li et al. Circuits and system design of RF polar transmitters using envelope-tracking and SiGe power amplifiers for mobile WiMAX
CN1909364B (en) BTL-type amplifier circuit
Hedayati et al. A monolithic, 500 C operational amplifier in 4H-SiC bipolar technology
CN102735887B (en) Single-ended active probe circuit of digital oscilloscope
US5329249A (en) High efficiency RF power amplifier
CN102495659B (en) Exponential temperature compensation low-temperature drift complementary metal oxide semiconductor (CMOS) band-gap reference voltage source
US6313704B1 (en) Multi-stage signal amplifying circuit
CN103560760B (en) Amplifying circuit and measuring device
TW200405650A (en) Amplifier power control circuit
TWI266061B (en) Static capacitance determining circuit and capacitance determining method
CN101405934A (en) Dynamic bias control in power amplifier
Schlumpf et al. A fast modulator for dynamic supply linear RF power amplifier
US6239645B1 (en) Complementary tuned mixer
CN100481716C (en) Bias circuit and control circuit thereof
Sun et al. A compact linear 60-GHz PA with 29.2% PAE operating at weak avalanche area in SiGe
CN105717463B (en) Power source loads test device

Legal Events

Date Code Title Description
PB01 Publication
C06 Publication
SE01 Entry into force of request for substantive examination
C10 Entry into substantive examination
GR01 Patent grant
GR01 Patent grant