CN104241470A - LED chip - Google Patents
LED chip Download PDFInfo
- Publication number
- CN104241470A CN104241470A CN201410521505.2A CN201410521505A CN104241470A CN 104241470 A CN104241470 A CN 104241470A CN 201410521505 A CN201410521505 A CN 201410521505A CN 104241470 A CN104241470 A CN 104241470A
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- solderable metal
- layer
- metal
- led chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 62
- 239000002184 metal Substances 0.000 claims abstract description 62
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 33
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910000679 solder Inorganic materials 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000000853 adhesive Substances 0.000 claims abstract description 9
- 230000001070 adhesive effect Effects 0.000 claims abstract description 9
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 9
- 239000010980 sapphire Substances 0.000 claims abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 230000005855 radiation Effects 0.000 abstract description 6
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000002800 charge carrier Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 5
- 239000003031 high energy carrier Substances 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004134 energy conservation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to an LED chip which comprises a metal base with adhesive thereon. A first weldable metal is arranged on the adhesive; a silicon substrate is arranged on the first weldable metal; a contact layer is arranged on the silicon substrate; a second weldable metal and a third weldable metal are respectively arranged at two ends above the contact layer; solders are respectively arranged on the second weldable metal and the third weldable metal; a P-type gallium nitride layer is arranged on the solders on the second weldable metal; a gallium nitride quantum well layer is arranged on the P-type gallium nitride layer; a fourth weldable is arranged on the solders on the third weldable metal; an N-type gallium nitride layer is arranged on the gallium nitride quantum well layer and the fourth weldable metal; and a sapphire layer are arranged on the N-type gallium nitride layer. The LED chip is simple in structure, easy to package, low in manufacturing cost, low in noise, high in radiation resistance capacity, stable in performance, environmental friendly and energy-saving.
Description
Technical field
The present invention relates to a kind of light emitting semiconductor device, particularly relate to a kind of LED chip.
Background technology
LED chip, also referred to as LED light-emitting diode, LED diode, LED luminescence chip, is the core component of LED, the P-N junction namely referred to.Its major function is: be luminous energy electric energy conversion, and the main material of chip is monocrystalline silicon.Semiconductor wafer is made up of two parts, and a part is P type semiconductor, and inside it, occupy an leading position in hole, and the other end is N type semiconductor, at this side mainly electronics.But time these two kinds of semiconductors couple together, between them, just form a P-N junction.When electric current acts on this wafer by wire time, electronics will be pushed to P district, and in P district, electronics is with hole-recombination, then will send energy with the form of photon, the principle of LED luminescence that Here it is.And the wavelength of light i.e. the color of light, be determined by the material forming P-N junction.
At present, LED chip technology has been tending towards perfect, but still there is the problems such as complex structure, capability of resistance to radiation are not strong, encapsulation difficulty.
Summary of the invention
Technical problem to be solved by this invention is to provide that a kind of structure is simple, easily encapsulation, cheap for manufacturing cost, noise is low, capability of resistance to radiation is strong, stable performance, environmental protection, energy-conservation LED chip.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of LED chip, comprise metab, adhesives is provided with above described metab, the first solderable metal is provided with above described adhesives, silicon substrate is provided with above described first solderable metal, contact layer is provided with above described silicon substrate, above described contact layer, two ends are respectively arranged with the second solderable metal, 3rd solderable metal, described second solderable metal, solder is respectively arranged with above 3rd solderable metal, described second solderable metal is provided with P type gallium nitride layer above solder, gallium nitride quantum well layer is provided with above described P type gallium nitride layer, described 3rd solderable metal is provided with the 4th solderable metal above solder, described gallium nitride quantum well layer, n type gallium nitride layer is provided with above 4th solderable metal, sapphire layer is provided with above described n type gallium nitride layer.
Described metab is energized and passes through the first solderable metal and silicon substrate conducting, when silicon substrate is excited generation charge carrier, described charge carrier arrives the second solderable metal, the 3rd solderable metal by contact layer, described high energy carriers produces blue light by P type gallium nitride layer, gallium nitride quantum well, arrival sapphire layer, described low energy charge carrier arrives sapphire layer by the 4th solderable metal, n type gallium nitride layer and produces ruddiness, and the mixing of described blue light, ruddiness realizes LED chip and produces white light.
On the basis of technique scheme, the present invention can also do following improvement.
Further, described contact layer is aluminum metal layer, and described aluminum metal can be with low, is conducive to the transition of charge carrier, is finally conducive to the lifting of LED chip luminous intensity.
Further, be provided with space between described solder, the shedding of heat when using for LED chip, between described solder, space is less, can prevent leaking outside of radiation.
Further, between described second solderable metal and the 3rd solderable metal, space is set, for the isolation between the second solderable metal and the 3rd solderable metal, realizes the different transmission path of low energy and high energy carriers.
The invention has the beneficial effects as follows: structure is simple, easily encapsulation, cheap for manufacturing cost, noise is low, capability of resistance to radiation is strong, stable performance, environmental protection, energy-conservation.
Accompanying drawing explanation
Fig. 1 is a kind of LED chip structure schematic diagram of the present invention;
In accompanying drawing, the list of parts representated by each label is as follows: 1, metab, the 2, first solderable metal, 3, the 3rd solderable metal, the 4, the 4th solderable metal, 5, n type gallium nitride layer, 6, sapphire layer, 7, gallium nitride quantum well layer, 8, P type gallium nitride layer, 9, solder, 10, silicon substrate, 11, adhesives, the 12, second solderable metal, 13, contact layer.
Embodiment
Be described principle of the present invention and feature below in conjunction with accompanying drawing, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As shown in Figure 1, a kind of LED chip, comprise metab 1, adhesives 11 is provided with above described metab 1, the first solderable metal 2 is provided with above described adhesives 11, silicon substrate 10 is provided with above described first solderable metal 2, contact layer 13 is provided with above described silicon substrate 10, above described contact layer 13, two ends are respectively arranged with the second solderable metal 12, 3rd solderable metal 3, described second solderable metal 12, solder 9 is respectively arranged with above 3rd solderable metal 3, described second solderable metal 12 is provided with P type gallium nitride layer 8 above solder 9, gallium nitride quantum well layer 7 is provided with above described P type gallium nitride layer 8, described 3rd solderable metal 3 is provided with the 4th solderable metal 4 above solder, described gallium nitride quantum well layer 7, n type gallium nitride layer 5 is provided with above 4th solderable metal 4, sapphire layer 6 is provided with above described n type gallium nitride layer 5.
Described metab 1 is energized and by the first solderable metal 2 and silicon substrate 10 conducting, when silicon substrate 10 is excited generation charge carrier, described charge carrier arrives the second solderable metal 12, the 3rd solderable metal 3 by contact layer 13, described high energy carriers produces blue light by P type gallium nitride layer 8, gallium nitride quantum well layer 7, arrival sapphire layer 6, described low energy charge carrier is arrived sapphire layer 6 produced ruddiness by the 4th solderable metal 4, n type gallium nitride layer 5, and the mixing of described blue light, ruddiness realizes LED chip and produces white light.
Described contact layer 13 is aluminum metal layer, and described aluminum metal can be with low, is conducive to the transition of charge carrier, is finally conducive to the lifting of LED chip luminous intensity; Be provided with space between described solder 9, the shedding of heat when using for LED chip, between described solder 9, space is less, can prevent leaking outside of radiation; Between described second solderable metal 12 and the 3rd solderable metal 3, space is set, for the isolation between the second solderable metal 12 and the 3rd solderable metal 3, realizes the different transmission path of low energy and high energy carriers.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. a LED chip, it is characterized in that, comprise metab, adhesives is provided with above described metab, the first solderable metal is provided with above described adhesives, silicon substrate is provided with above described first solderable metal, contact layer is provided with above described silicon substrate, above described contact layer, two ends are respectively arranged with the second solderable metal, 3rd solderable metal, described second solderable metal, solder is respectively arranged with above 3rd solderable metal, described second solderable metal is provided with P type gallium nitride layer above solder, gallium nitride quantum well layer is provided with above described P type gallium nitride layer, described 3rd solderable metal is provided with the 4th solderable metal above solder, described gallium nitride quantum well layer, n type gallium nitride layer is provided with above 4th solderable metal, sapphire layer is provided with above described n type gallium nitride layer.
2. a kind of LED chip according to claim 1, it is characterized in that, described contact layer is aluminum metal layer.
3. a kind of LED chip according to claim 1, is characterized in that, be provided with space between described solder.
4. a kind of LED chip according to claim 1, is characterized in that, arrange space between described second solderable metal and the 3rd solderable metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410521505.2A CN104241470A (en) | 2014-09-30 | 2014-09-30 | LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410521505.2A CN104241470A (en) | 2014-09-30 | 2014-09-30 | LED chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104241470A true CN104241470A (en) | 2014-12-24 |
Family
ID=52229203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410521505.2A Pending CN104241470A (en) | 2014-09-30 | 2014-09-30 | LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104241470A (en) |
-
2014
- 2014-09-30 CN CN201410521505.2A patent/CN104241470A/en active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141224 |