CN104241333A - Flexible active matrix organic light emitting diode display and manufacturing method thereof - Google Patents
Flexible active matrix organic light emitting diode display and manufacturing method thereof Download PDFInfo
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- CN104241333A CN104241333A CN201410538312.8A CN201410538312A CN104241333A CN 104241333 A CN104241333 A CN 104241333A CN 201410538312 A CN201410538312 A CN 201410538312A CN 104241333 A CN104241333 A CN 104241333A
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- buffer layer
- gas barrier
- barrier layer
- plastic substrate
- substrate
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- 229920001621 AMOLED Polymers 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 230000004888 barrier function Effects 0.000 claims abstract description 74
- 239000004033 plastic Substances 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 150000002484 inorganic compounds Chemical class 0.000 abstract description 4
- 229910010272 inorganic material Inorganic materials 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 230000003139 buffering effect Effects 0.000 abstract 5
- 239000007789 gas Substances 0.000 description 47
- 239000010409 thin film Substances 0.000 description 9
- 238000005538 encapsulation Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 229920002799 BoPET Polymers 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
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Abstract
The invention provides a flexible active matrix organic light emitting diode display and a manufacturing method thereof. The manufacturing method comprises the following steps of providing a rigid substrate; sequentially forming a first buffering layer and a second buffering layer on the rigid substrate; forming a first gas barrier layer on the second buffering layer; forming a plastic substrate on the first gas barrier layer; forming a second gas barrier layer on the plastic substrate; and removing the rigid substrate by using a laser lift-off manufacture procedure. Compared with the prior art, the manufacturing method has the advantages that silicon nitride, silicon oxide, silicon oxynitride or other inorganic compounds with a water-resisting effect serve as the gas barrier layers and are formed on the upper side and the lower side of the plastic substrate, so that external steam can be effectively stopped from entering the plastic substrate. The two stacked buffering layers are arranged under the first gas barrier layer, and when the rigid substrate is removed in a laser lift-off mode, the two buffering layers serve as laser sacrificial layers so as to protect the plastic substrate against being damaged.
Description
Technical Field
The invention relates to an active matrix organic light emitting diode display technology, in particular to a flexible active matrix organic light emitting diode display and a manufacturing method thereof.
Background
Among the conventional flat panel displays, an Organic Light Emitting Diode (OLED) display has been receiving much attention and interest because it provides a wide viewing angle, a good contrast ratio, and a fast response speed, and has higher luminance and a lower driving voltage than an inorganic Light emitting display.
Generally, the OLED display can be classified into a passive Matrix OLED (passive Matrix OLED) and an Active Matrix OLED (Active Matrix OLED, AMOLED) according to a driving method. The PMOLED display does not emit light when data is not written, and emits light only during data writing. The driving mode has simple structure, low cost and easy design, and is mainly suitable for small and medium size displays. For an AMOLED display, each pixel of the pixel array has a capacitor for storing data, and each pixel is maintained in a light-emitting state. The power consumption of the AMOLED display is significantly less than that of the PMOLED display, and the driving method is more suitable for developing a large-sized and high-resolution display, so that the AMOLED display is the main direction of future development.
In addition, the flexible AMOLED display is one of the key points in the research and development of various manufacturers and research units at home and abroad in recent years. Compared with a common display, the flexible AMOLED has the characteristics of light weight, flexibility, easy collection, portability and the like. In summary, the Flexible AMOLED mainly includes a Flexible substrate (Flexible substrate), a buffer layer (buffer layer), a Thin Film Transistor (TFT), an organic light emitting diode (oled), and a Thin Film Encapsulation layer (Thin Film Encapsulation). Among them, the water oxygen barrier technology/thin film encapsulation technology is one of the key technologies. In a Flexible AMOLED display structure in the prior art, although the PET film and the barrier layer are disposed below the plastic substrate, when the device is exposed to high temperature and a long time (e.g., 100 hours) elapses, moisture may still enter and be absorbed by the plastic substrate at two sides and below the plastic substrate, so that a device on an Integrated Circuit (IC) or a Flexible Printed Circuit (FPC) bonded (bonded) to a surface of the plastic substrate is easily separated from the substrate, and the device is damaged.
In view of the above, a problem to be solved by those skilled in the art is how to manufacture a glass package-like package structure with high reliability on a flexible AMOLED display to improve or eliminate the above-mentioned defects in the prior art and prolong the service life of the flexible AMOLED display.
Disclosure of Invention
Aiming at the defects of the flexible AMOLED display in the prior art in the process of realizing the water and oxygen barrier design, the invention provides a novel flexible AMOLED display capable of preventing water and gas from entering a plastic substrate and a manufacturing method thereof.
According to an aspect of the present invention, a method for manufacturing a flexible AMOLED display is provided, the flexible AMOLED display includes an array substrate and an organic light emitting diode disposed above the array substrate, wherein the method includes the following steps:
providing a rigid substrate;
sequentially forming a first buffer layer and a second buffer layer above the rigid substrate;
forming a first gas barrier layer (first gas barrier layer) over the second buffer layer;
forming a plastic substrate above the first gas barrier layer;
forming a second gas barrier layer (second gas barrier layer) over the plastic substrate, wherein the first gas barrier layer and the second gas barrier layer are located on two sides of the plastic substrate to prevent moisture from entering the plastic substrate; and
the rigid substrate is removed using a Laser Lift Off (LLO) process.
In one embodiment, the first buffer layer is made of Indium Tin Oxide (ITO).
In an embodiment of the invention, the second buffer layer is made of Indium Gallium Zinc Oxide (IGZO) material.
In an embodiment of the invention, the conductivity of the first buffer layer is greater than the conductivity of the second buffer layer, and the reduced force of the first buffer layer is less than the reduced force of the second buffer layer.
In one embodiment, the first gas barrier layer and the second gas barrier layer are made of silicon nitride (SiNx), silicon oxide (SiOx) or silicon oxynitride (SiOxNy).
In one embodiment, the plastic substrate is made of Polyimide (Polyimide).
According to another aspect of the present invention, there is provided a flexible AMOLED display, including an array substrate and an organic light emitting diode disposed above the array substrate, wherein the flexible AMOLED display further includes:
a plastic substrate;
a first gas barrier layer (first gas barrier layer) disposed below the plastic substrate; and
a second gas barrier layer disposed above the plastic substrate, wherein the first gas barrier layer and the second gas barrier layer are used for preventing moisture from entering the plastic substrate,
the second buffer layer is arranged below the first gas barrier layer; and
a first buffer layer disposed below the second buffer layer,
when the rigid substrate below the first buffer layer is removed by the soft AMOLED display through a Laser Lift Off (LLO) process, the first buffer layer and the second buffer layer are used as Laser sacrificial layers to protect the plastic substrate.
In one embodiment, the first gas barrier layer and the second gas barrier layer are made of silicon nitride (SiNx), silicon oxide (SiOx) or silicon oxynitride (SiOxNy).
In one embodiment, the first buffer layer is made of Indium Tin Oxide (ITO), and the second buffer layer is made of Indium Gallium Zinc Oxide (IGZO).
In an embodiment of the invention, the conductivity of the first buffer layer is greater than the conductivity of the second buffer layer, and the reduced force of the first buffer layer is less than the reduced force of the second buffer layer.
The flexible AMOLED display and the manufacturing method thereof are adopted, firstly a rigid substrate is provided, then a first buffer layer and a second buffer layer which are stacked are sequentially formed above the rigid substrate, a first gas barrier layer and a second gas barrier layer are arranged on two sides of the plastic substrate, water vapor is prevented from entering the plastic substrate by the first gas barrier layer and the second gas barrier layer, and finally the rigid substrate is removed by adopting a laser stripping process, so that the flexible AMOLED display is formed. Compared with the prior art, the invention forms silicon nitride, silicon oxide, silicon oxynitride or other inorganic compounds with water-blocking effect on the upper side and the lower side of the plastic substrate, thereby effectively preventing external water vapor from entering the plastic substrate. In addition, the invention adds two laminated buffer layers below the first gas barrier layer, and when the rigid substrate is removed by using a laser stripping mode, the two buffer layers are used as laser sacrificial layers to ensure that the plastic substrate is not damaged.
Drawings
The various aspects of the present invention will become more apparent to the reader after reading the detailed description of the invention with reference to the attached drawings. Wherein,
FIG. 1 is a schematic diagram illustrating a structure of a flexible AMOLED display in the prior art;
FIG. 2 is a schematic diagram illustrating a state of the flexible AMOLED display of FIG. 1 in which a rigid substrate is laser stripped;
FIG. 3 is a flow chart of a method of fabricating a flexible AMOLED display according to an embodiment of the present invention; and
fig. 4A to 4G are exploded schematic views illustrating the process steps of the method for manufacturing the flexible AMOLED display of fig. 3.
Detailed Description
In order to make the present disclosure more complete and complete, reference is made to the accompanying drawings, in which like references indicate similar or analogous elements, and to the various embodiments of the invention described below. However, it will be understood by those of ordinary skill in the art that the examples provided below are not intended to limit the scope of the present invention. In addition, the drawings are only for illustrative purposes and are not drawn to scale.
Fig. 1 is a schematic structural diagram of a flexible AMOLED display in the prior art. Fig. 2 is a schematic diagram illustrating a state of the flexible AMOLED display of fig. 1 in which a rigid substrate is laser-peeled.
Referring to fig. 1, the conventional flexible AMOLED display includes an array substrate (Arraysubstrate)100, a plastic substrate (plastic substrate)102, a barrier layer (barrier layer)104, a PET Film layer 106, a Top barrier layer (Top barrier layer)108, a Thin Film Encapsulation layer (Thin Film Encapsulation layer)110, an organic light emitting diode OLED, and a Polarizer (Polarizer) 112.
Specifically, the organic light emitting diode OLED is located above the array substrate 100, and the periphery of the organic light emitting diode is completely encapsulated by the thin film encapsulation layer 110. The top barrier layer 108 is located between the array substrate 100 and the plastic substrate 102, and is mainly used to block moisture possibly inside the plastic substrate 102 from entering the array substrate 100. Here, the barrier layer 108 is located above the plastic substrate 102, and its position relative to the plastic substrate 102 is the top, so it is also called as a top barrier layer. The PET film layer 106 is disposed under the plastic substrate 102, and the barrier layer 104 is disposed under the PET film layer 106.
As mentioned above, when the device is exposed to high temperature for a long time (e.g. 100 hours), moisture may enter from both sides and the bottom of the plastic substrate 102 and be absorbed by the plastic substrate 102, so that the devices of the Integrated Circuit (IC) or the Flexible Printed Circuit (FPC) bonded (bonded) on the surface of the plastic substrate 102 are easily separated from the substrate, and the device may be damaged.
With further reference to fig. 2, a rigid substrate 114 is disposed below the plastic substrate 102, and the rigid substrate 114 is used as a carrier substrate to facilitate various process operations of the flexible AMOLED display. However, when the rigid substrate 114 is removed by Laser Lift Off (LLO), external moisture is also easily introduced into the plastic substrate 102.
To address the above-mentioned deficiencies or inadequacies of the prior art, the present invention provides a new flexible AMOLED display architecture and method of making the same. FIG. 3 is a flow chart of a method for manufacturing a flexible AMOLED display according to an embodiment of the present invention. Fig. 4A to 4G are exploded schematic views illustrating the process steps of the method for manufacturing the flexible AMOLED display of fig. 3.
Referring to fig. 3, in the method for manufacturing the flexible AMOLED display according to the embodiment, step S101 is first performed to provide a rigid substrate 200, such as a glass substrate (as shown in fig. 4A). In step S103, a first buffer layer (first buffer layer)202 is formed on the rigid substrate 200, and then a second buffer layer (second buffer layer)204 is formed on the first buffer layer 202 (as shown in fig. 4B and 4C). In one embodiment, the first buffer layer 202 is made of Indium Tin Oxide (ITO). The second buffer layer 204 is made of Indium Gallium Zinc Oxide (IGZO). Preferably, the conductivity of the first buffer layer 202 is greater than the conductivity of the second buffer layer 204, and the reduced force of the first buffer layer 202 is less than the reduced force of the second buffer layer 204. In addition, the first buffer layer 202 and/or the second buffer layer 204 may have a predetermined pattern.
In step S105, a first gas barrier layer (first gas barrier layer)206 is formed on the second buffer layer 204 (as shown in fig. 4D). Next, step S107 is performed to form a plastic substrate 208 on the first gas barrier layer 206 (as shown in fig. 4E). For example, the plastic substrate 208 is made of Polyimide (Polyimide). In step S109, a second gas barrier layer (second gas barrier layer)210 is formed on the plastic substrate 208, and then an array substrate 212 is formed on the second gas barrier layer 210 (as shown in fig. 4F). As such, the first gas barrier layer 206 and the second gas barrier layer 210 are disposed on two sides of the plastic substrate 208, so as to effectively prevent moisture from entering the plastic substrate 208. In one embodiment, the first gas barrier layer 206 and the second gas barrier layer 210 are made of silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiOxNy), or other inorganic compounds with water blocking function. Then, the organic light emitting diode OLED is disposed above the array substrate 212, and the periphery of the organic light emitting diode OLED is completely encapsulated by a Thin Film Encapsulation Layer (Thin Film Encapsulation Layer)214, and a polarizer 216 is formed above the array substrate 212.
Finally, step S111 is performed to remove the rigid substrate 200 by Laser Lift Off (LLO) process, as shown in fig. 4G.
It should be understood by those skilled in the art that an exemplary embodiment of the flexible AMOLED display according to the present invention can also be disclosed in conjunction with FIG. 4G. In more detail, the flexible AMOLED display of the present invention includes an array substrate 212 and an organic light emitting diode OLED disposed above the array substrate 212. In addition, the flexible AMOLED display further includes a plastic substrate 208, a first gas barrier layer (first gas barrier layer)206, a second gas barrier layer (second gas barrier layer)210, a first buffer layer 202 and a second buffer layer 204. The first gas barrier layer 206 and the second gas barrier layer 210 are respectively disposed on the bottom and the top of the plastic substrate 210, and the first gas barrier layer 206 and the second gas barrier layer 210 prevent moisture from entering the plastic substrate 210. The first buffer layer 202 and the second buffer layer 204 are stacked under the first gas barrier layer 206, and when the rigid substrate 200 under the first buffer layer 202 is removed by a Laser Lift Off (LLO) process, the first buffer layer 202 and the second buffer layer 204 serve as a Laser sacrificial layer to protect the plastic substrate 208.
The flexible AMOLED display and the manufacturing method thereof are adopted, firstly a rigid substrate is provided, then a first buffer layer and a second buffer layer which are stacked are sequentially formed above the rigid substrate, a first gas barrier layer and a second gas barrier layer are arranged on two sides of the plastic substrate, water vapor is prevented from entering the plastic substrate by the first gas barrier layer and the second gas barrier layer, and finally the rigid substrate is removed by adopting a laser stripping process, so that the flexible AMOLED display is formed. Compared with the prior art, the invention forms silicon nitride, silicon oxide, silicon oxynitride or other inorganic compounds with water-blocking effect on the upper side and the lower side of the plastic substrate, thereby effectively preventing external water vapor from entering the plastic substrate. In addition, the invention adds two laminated buffer layers below the first gas barrier layer, and when the rigid substrate is removed by using a laser stripping mode, the two buffer layers are used as laser sacrificial layers to ensure that the plastic substrate is not damaged.
Hereinbefore, specific embodiments of the present invention are described with reference to the drawings. However, those skilled in the art will appreciate that various modifications and substitutions can be made to the specific embodiments of the present invention without departing from the spirit and scope of the invention. Such modifications and substitutions are intended to be included within the scope of the present invention as defined by the appended claims.
Claims (10)
1. A manufacturing method of a flexible active matrix organic light emitting diode display comprises an array substrate and an organic light emitting diode positioned above the array substrate, and is characterized in that the manufacturing method comprises the following steps:
providing a rigid substrate;
sequentially forming a first buffer layer and a second buffer layer above the rigid substrate;
forming a first gas barrier layer above the second buffer layer;
forming a plastic substrate above the first gas barrier layer;
forming a second gas barrier layer above the plastic substrate, wherein the first gas barrier layer and the second gas barrier layer are located on two sides of the plastic substrate to prevent moisture from entering the plastic substrate; and
and removing the rigid substrate by adopting a laser stripping process.
2. The method of claim 1, wherein the first buffer layer is ITO.
3. The method of claim 1 wherein the second buffer layer is an indium gallium zinc oxide material.
4. The method of claim 1, wherein the first buffer layer has a conductivity greater than that of the second buffer layer, and the reduced power of the first buffer layer is less than that of the second buffer layer.
5. The method of claim 1 wherein the first and second gas-barrier layers are silicon nitride, silicon oxide or silicon oxynitride.
6. The method of claim 1 wherein the plastic substrate is a polyimide material.
7. A flexible active matrix organic light emitting diode display comprises an array substrate and an organic light emitting diode positioned above the array substrate, and is characterized by further comprising:
a plastic substrate;
the first gas barrier layer is arranged below the plastic substrate; and
a second gas barrier layer disposed above the plastic substrate, wherein the first gas barrier layer and the second gas barrier layer are used for preventing moisture from entering the plastic substrate,
the second buffer layer is arranged below the first gas barrier layer; and
a first buffer layer disposed below the second buffer layer,
when the rigid substrate below the first buffer layer is removed by the flexible active matrix organic light-emitting diode display through a laser stripping process, the first buffer layer and the second buffer layer are used as laser sacrificial layers to protect the plastic substrate.
8. The flexible active matrix organic light emitting diode display of claim 7, wherein the first gas barrier layer and the second gas barrier layer are each silicon nitride, silicon oxide, or silicon oxynitride.
9. The flexible active matrix organic light emitting diode display of claim 7, wherein the first buffer layer is indium tin oxide and the second buffer layer is indium gallium zinc oxide.
10. The flexible active matrix organic light emitting diode display of claim 7, wherein the first buffer layer has a conductivity greater than that of the second buffer layer, and wherein the reduced power of the first buffer layer is less than that of the second buffer layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410538312.8A CN104241333A (en) | 2014-10-13 | 2014-10-13 | Flexible active matrix organic light emitting diode display and manufacturing method thereof |
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| CN201410538312.8A CN104241333A (en) | 2014-10-13 | 2014-10-13 | Flexible active matrix organic light emitting diode display and manufacturing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789482A (en) * | 2015-01-14 | 2016-07-20 | 三星显示有限公司 | Display apparatus, and method of manufacturing the same |
| CN108336245A (en) * | 2018-01-09 | 2018-07-27 | 友达光电股份有限公司 | Flexible electronic device and manufacturing method thereof |
| CN108447399A (en) * | 2018-01-17 | 2018-08-24 | 友达光电股份有限公司 | Flexible display and manufacturing method thereof |
| CN108539051A (en) * | 2018-03-20 | 2018-09-14 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
-
2014
- 2014-10-13 CN CN201410538312.8A patent/CN104241333A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789482A (en) * | 2015-01-14 | 2016-07-20 | 三星显示有限公司 | Display apparatus, and method of manufacturing the same |
| TWI693736B (en) * | 2015-01-14 | 2020-05-11 | 南韓商三星顯示器有限公司 | Display apparatus and method of manufacturing display apparatus |
| CN108336245A (en) * | 2018-01-09 | 2018-07-27 | 友达光电股份有限公司 | Flexible electronic device and manufacturing method thereof |
| TWI728222B (en) * | 2018-01-09 | 2021-05-21 | 友達光電股份有限公司 | Flexible electronic device and manufacturing method thereof |
| CN108447399A (en) * | 2018-01-17 | 2018-08-24 | 友达光电股份有限公司 | Flexible display and manufacturing method thereof |
| CN108539051A (en) * | 2018-03-20 | 2018-09-14 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
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Application publication date: 20141224 |