CN104201181A - Improved black-level alignment image sensor and manufacturing method thereof - Google Patents
Improved black-level alignment image sensor and manufacturing method thereof Download PDFInfo
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- CN104201181A CN104201181A CN201410441377.0A CN201410441377A CN104201181A CN 104201181 A CN104201181 A CN 104201181A CN 201410441377 A CN201410441377 A CN 201410441377A CN 104201181 A CN104201181 A CN 104201181A
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Abstract
The invention discloses an improved black-level alignment image sensor and a manufacturing method thereof. The image sensor comprises a sensitization pixel array and a shading pixel array, a red colored filter side wall, a green colored filter side wall and a blue colored filter side wall are arranged on the periphery of the shading pixel array, light wandering to the shading pixel array from a non-shading pixel array is absorbed when passing the colored filter side walls, so that shading pixels cannot be interfered by the light, and black-level alignment quality and the quality of an image acquired by the image sensor are improved.
Description
Technical field
The present invention relates to a kind of imageing sensor, relate in particular to a kind of imageing sensor of improveing black-level alignment and preparation method thereof.
Background technology
In image sensor pixel array, generally comprise photosensitive pixel array and shading pel array two parts.Photosensitive pixel array is used for perception gather image information, and the information that shading pel array collects is used as the reference information calibration in Image Information Processing; That is to say, the information that real image information equals photosensitive pixel collection deducts the information that shading pixel gathers, and the method is in the field of business is called black-level alignment.In order to ensure the accuracy of black-level alignment, shading pixel can not be subject to light and disturb, and generally on shading pixel, uses high-rise metal shading.But imageing sensor of the prior art uses high-rise metal shading, can not ensure that shading pixel is not disturbed by light completely.
Image sensor pixel array part schematic diagram of the prior art, as shown in Figure 1.In Fig. 1,101 is semiconductor substrate, 102a is sensor devices in photosensitive pixel, 102b is the sensor devices in shading pixel, and 103 is the low layer metal interconnecting wires in device, and 104 is high-rise shading metal level, 105 is incident ray, 106 mark photosensitive pixel array area, 107 mark shading pixel array regions, 108 is dielectric between metal; 109 are identified at the light of shading pixel region migration, between the metal of this part light in shading pel array, reflect, and finally can inject in sensor devices.
In above-mentioned prior art, the sensor devices in shading pixel still can receive light information, and the information of sensor devices collection is not real without optical information, so reduced the accuracy of imageing sensor black-level alignment.
Summary of the invention
The object of this invention is to provide imageing sensor of a kind of improvement black-level alignment of the accuracy that can promote black-level alignment and preparation method thereof.
The object of the invention is to be achieved through the following technical solutions:
The imageing sensor of improvement black-level alignment of the present invention, comprises photosensitive pixel array and shading pel array, and described shading pel array is provided with following any one or more colorized optical filtering side wall around:
Red colorized optical filtering side wall, green colorized optical filtering side wall and blue colorized optical filtering side wall.
The manufacture method of the imageing sensor of above-mentioned improvement black-level alignment of the present invention, comprises step:
A. before next-door neighbour makes the high-rise smithcraft of shading, spin coating photoresist also develops, at precalculated position opening;
B. dry method ion etching, all etches away the dielectric of photoresist opening part;
C. cleaning photoetching glue, all removes photoresist;
D. spin coating the first colorized optical filtering material, the hole to dielectric is filled and led up completely;
E. spin coating photoresist development, stay glue in precalculated position;
F. dry method ion etching, all etches away the non-the first colorized optical filtering material that stays glue position;
G. cleaning photoetching glue, all removes photoresist;
H. spin coating photoresist development, at precalculated position opening;
I. dry method ion etching, all etches away the dielectric of photoresist opening part;
J. cleaning photoetching glue, all removes photoresist;
K. spin coating the second colorized optical filtering material, the hole to dielectric is filled and led up completely;
L. repeating step e-j;
M. the third colorized optical filtering material of spin coating, the hole to dielectric is filled and led up completely;
N. cmp, all removes the first of dielectric upper surface, the second and the third colorized optical filtering material.
As seen from the above technical solution provided by the invention, a kind of imageing sensor of improveing black-level alignment that the embodiment of the present invention provides and preparation method thereof, because shading pel array is provided with redness, green and blue colorized optical filtering side wall around; Go to the light shading pel array from non-shading pel array middle reaches, during through colorized optical filtering side wall, be absorbed, disturb so shading pixel can not be subject to light, promoted the quality of black-level alignment, improved the picture quality that imageing sensor collects.
Brief description of the drawings
Fig. 1 is image sensor pixel array part tangent plane schematic diagram of the prior art;
Fig. 2 is the image sensor pixel array part floor map in the embodiment of the present invention;
Fig. 3 is image sensor pixel array part tangent plane (the A-B dotted line tangent plane in Fig. 2) schematic diagram in the embodiment of the present invention;
Fig. 4 is the tangent plane schematic diagram before the high-rise smithcraft of the next-door neighbour's shading in the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention;
Fig. 5 is the photoresist of spin coating for the first time the development step schematic diagram in the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention;
Fig. 6 is the ion etching of the dry method for the first time step schematic diagram in the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention;
Fig. 7 is the step of the cleaning photoetching glue for the first time schematic diagram in the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention;
Fig. 8 is the spin coating the first colorized optical filtering material step schematic diagram in the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention;
Fig. 9 is the photoresist of spin coating for the second time the development step schematic diagram in the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention;
Figure 10 is the ion etching of the dry method for the second time step schematic diagram in the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention;
Figure 11 is the step of the cleaning photoetching glue for the second time schematic diagram in the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention;
Figure 12 is the photoresist of spin coating for the third time the development step schematic diagram in the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention;
Figure 13 is the ion etching of the dry method for the third time step schematic diagram in the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention;
Figure 14 is the step of the cleaning photoetching glue for the third time schematic diagram in the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention;
Figure 15 is the spin coating the second colorized optical filtering material step schematic diagram in the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention;
Figure 16 is the 4th spin coating photoresist the development step schematic diagram in the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention;
Figure 17 is the 4th dry method ion etching step schematic diagram in the colorized optical filtering side wall processing step in imageing sensor of the present invention;
Figure 18 is the 4th cleaning photoetching glue step schematic diagram in the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention;
Figure 19 is the 5th spin coating photoresist the development step schematic diagram in the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention;
Figure 20 is the 5th dry method ion etching step schematic diagram in the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention;
Figure 21 is the 5th cleaning photoetching glue step schematic diagram in the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention;
Figure 22 is the third colorized optical filtering material step schematic diagram of spin coating in the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention;
Figure 23 is the cmp step schematic diagram in the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention;
Figure 24 is the tangent plane schematic diagram after the colorized optical filtering side wall processing step in the imageing sensor in the embodiment of the present invention.
Embodiment
To be described in further detail the embodiment of the present invention below.
The imageing sensor of improvement black-level alignment of the present invention, its preferably embodiment be:
Comprise photosensitive pixel array and shading pel array, described shading pel array is provided with following any one or more colorized optical filtering side wall around:
Red colorized optical filtering side wall, green colorized optical filtering side wall and blue colorized optical filtering side wall.
The width of described red colorized optical filtering side wall, green colorized optical filtering side wall and blue colorized optical filtering side wall is more than or equal to respectively 0.7um.
The upper surface of described red colorized optical filtering side wall, green colorized optical filtering side wall and blue colorized optical filtering side wall respectively with high-rise shading Metal Contact, lower surface respectively with semiconductor substrate Surface Contact.
The distance of adjacent colorized optical filtering side wall is more than or equal to 0.2um.
The manufacture method of the imageing sensor of above-mentioned improvement black-level alignment of the present invention, its preferably embodiment be:
Comprise step:
A. before next-door neighbour makes the high-rise smithcraft of shading, spin coating photoresist also develops, at precalculated position opening;
B. dry method ion etching, all etches away the dielectric of photoresist opening part;
C. cleaning photoetching glue, all removes photoresist;
D. spin coating the first colorized optical filtering material, the hole to dielectric is filled and led up completely;
E. spin coating photoresist development, stay glue in precalculated position;
F. dry method ion etching, all etches away the non-the first colorized optical filtering material that stays glue position;
G. cleaning photoetching glue, all removes photoresist;
H. spin coating photoresist development, at precalculated position opening;
I. dry method ion etching, all etches away the dielectric of photoresist opening part;
J. cleaning photoetching glue, all removes photoresist;
K. spin coating the second colorized optical filtering material, the hole to dielectric is filled and led up completely;
L. repeating step e-j;
M. the third colorized optical filtering material of spin coating, the hole to dielectric is filled and led up completely;
N. cmp, all removes the first of dielectric upper surface, the second and the third colorized optical filtering material.
Described the first colorized optical filtering material, the second colorized optical filtering material and the third colorized optical filtering material are that red colorized optical filtering material, green colored filter and blue colored filter sort arbitrarily.
In order to promote the quality of imageing sensor black-level alignment, avoid shading pixel to be subject to the interference of migration light, the present invention starts with from improving image sensor pixel array structure, makes three kinds of colorized optical filtering side walls of RGB around shading pel array; No matter the visible ray of which kind of wavelength, when by colorized optical filtering side wall, will be absorbed by a kind of side wall in three kinds of colorized optical filtering side walls, and therefore shading pixel sensor devices can not be subject to the interference of migration light.Can disturb to avoid shading pixel to be subject to light, promote the accuracy of black-level alignment, to improve the picture quality that imageing sensor collects.
Embodiment mono-:
As shown in Figure 2, Fig. 2 shows the floor map of image sensor pixel array part of the present invention.In Fig. 2,201 mark photosensitive pixel array portions, 202 mark colorized optical filtering side wall positions, 203 mark shading pixel array portion, 204a is photosensitive pixel, 204b is shading pixel, 205 is 203 the first colorized optical filtering side wall rings around, 206 is 203 the second colorized optical filtering side wall rings around, and 207 is 203 the third colorized optical filtering side wall rings around, and dotted line AB identifies a tangent position.It is a kind of in redness, green and blue colorized optical filtering side wall that described the first, the second and the third colorized optical filtering side wall are respectively; The width of described colorized optical filtering side wall ring 205,206 and 207 is more than or equal to respectively 0.7um; The distance of described adjacent two kinds of colorized optical filtering side walls is more than or equal to 0.2um.
As shown in Figure 3, Fig. 3 shows image sensor pixel array part tangent plane schematic diagram of the present invention, and its tangent plane position is the AB dotted line tangent plane position shown in Fig. 2.In Fig. 3, 301 is semiconductor substrate, 302a is the sensor devices in photosensitive pixel, 302b is the sensor devices in shading pixel, 303 is the low layer metal interconnecting wires between device, 304 is the high-rise metal of shading, 305 mark incident raies, 306 mark photosensitive pixel array regions, 307 mark shading pixel array region, 308 is the first colorized optical filtering side wall, 308a identifies by the light of 308 absorptions, 309 is the second colorized optical filtering side wall, 309a identifies by the light of 309 absorptions, 310 is the third colorized optical filtering side wall, 310a identifies by the light of 310 absorptions, 311 is the dielectric between metal.The material that described 308,309 and 310 colorized optical filtering side walls are filled is respectively the one in red, green and blue colored filter, and its upper surface contacts with 304, and lower surface contacts with 301 upper surfaces.
As can be seen here, three kinds of colorized optical filtering side walls in imageing sensor of the present invention have absorbed the light of the visible light part of migration completely, avoided the sensor devices of shading pixel to be subject to the interference of light, the information that shading pixel is collected becomes real black level information.Therefore, imageing sensor of the present invention has promoted the quality of black-level alignment, has improved the picture quality that imageing sensor collects.
Embodiment bis-:
The technique making step of the colorized optical filtering side wall in imageing sensor of the present invention, as shown in Fig. 4～Figure 24.Fig. 4 shows the tangent plane schematic diagram before next-door neighbour makes the high-rise smithcraft of shading, wherein, 401 is semiconductor substrate, 402a is the sensor devices in photosensitive pixel, 402b is the sensor devices in shading pixel, 403 is the low layer metal interconnecting wires between device, and 404 for being filled in the dielectric between metal interconnecting wires.The technique of described colorized optical filtering side wall is made from the position of technique shown in Fig. 4.Concrete technology step is described below:
1. spin coating photoresist development, at precalculated position opening, A/F is more than or equal to 0.7um, as shown in Figure 5;
2. dry method ion etching, all etches away the dielectric of photoresist opening part, and opening part lower surface is upper semiconductor, as shown in Figure 6;
3. cleaning photoetching glue, all removes photoresist, as shown in Figure 7;
4. spin coating the first colorized optical filtering material, the hole to dielectric is filled and led up completely, and described packing material upper surface is not less than hole upper surface, and as shown in Figure 8, wherein 801 is the first colorized optical filtering material;
5. spin coating photoresist developing, stays glue in precalculated position, described in to stay glue position be the dielectric aperture position in step 2 just, as shown in Figure 9;
6. dry method ion etching, all etches away the non-the first colorized optical filtering material that stays glue position in step 5, as shown in figure 10;
7. cleaning photoetching glue, all removes photoresist, as shown in figure 11;
8. spin coating photoresist development, at precalculated position opening, the width of opening is more than or equal to 0.7um, and the distance of the precalculated position opening part in described precalculated position opening part and step 1 is more than or equal to 0.2um, as shown in figure 12;
9. dry method ion etching, all etches away the dielectric of photoresist opening part, and wherein, opening part lower surface is concordant with semiconductor substrate 401 upper surfaces, as shown in figure 13;
10. cleaning photoetching glue, all removes photoresist, as shown in figure 14;
11. spin coating the second colorized optical filtering materials, the hole to dielectric is filled and led up completely, and as shown in figure 15, wherein, 1501 is the second colorized optical filtering material;
12. spin coating photoresists also develop, and stay glue in precalculated position, described in the photoresist that stays cover the hole in step 2 and step 9, as shown in figure 16;
13. dry method ion etchings, all etch away the non-the second colorized optical filtering material that stays glue position in step 12, as shown in figure 17;
14. cleaning photoetching glues, all remove photoresist, as shown in figure 18;
15. spin coating photoresists also develop, and at precalculated position opening, the width of opening is more than or equal to 0.7um, and the distance of the precalculated position opening part in described precalculated position opening part and step 8 is more than or equal to 0.2um, as shown in figure 19;
16. dry method ion etchings, all etch away the dielectric of the photoresist opening part in step 15, and opening lower surface is concordant with 401 upper surfaces, as shown in figure 20;
17. cleaning photoetching glues, all remove photoresist, as shown in figure 21;
The third colorized optical filtering material of 18. spin coatings, the hole to dielectric is filled and led up completely, and as shown in figure 22, wherein 2201 is the third colorized optical filtering material;
19. cmps, all remove the first of dielectric upper surface, the second and the third colorized optical filtering material, as shown in figure 23.
20. Figure 24 show the tangent plane schematic diagram after the colorized optical filtering side wall processing step in imageing sensor of the present invention, after this step, continue to do the high-rise smithcraft of shading in logic process.
Above-mentioned the first, the second and the third colorized optical filtering material are respectively the one in red, green and blue colored filter.
The above; only for preferably embodiment of the present invention, but protection scope of the present invention is not limited to this, is anyly familiar with in technical scope that those skilled in the art disclose in the present invention; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (6)
1. improve an imageing sensor for black-level alignment, comprise photosensitive pixel array and shading pel array, it is characterized in that, described shading pel array is provided with following any one or more colorized optical filtering side wall around:
Red colorized optical filtering side wall, green colorized optical filtering side wall and blue colorized optical filtering side wall.
2. the imageing sensor of improvement black-level alignment according to claim 1, is characterized in that, the width of described red colorized optical filtering side wall, green colorized optical filtering side wall and blue colorized optical filtering side wall is more than or equal to respectively 0.7um.
3. the imageing sensor of improvement black-level alignment according to claim 2, it is characterized in that, the upper surface of described red colorized optical filtering side wall, green colorized optical filtering side wall and blue colorized optical filtering side wall respectively with high-rise shading Metal Contact, lower surface respectively with semiconductor substrate Surface Contact.
4. imageing sensor of improvement black-level alignment according to claim 3 and preparation method thereof, is characterized in that, the distance of adjacent colorized optical filtering side wall is more than or equal to 0.2um.
5. a manufacture method for the imageing sensor of the improvement black-level alignment described in claim 1 to 4 any one, is characterized in that, comprises step:
A. before next-door neighbour makes the high-rise smithcraft of shading, spin coating photoresist also develops, at precalculated position opening;
B. dry method ion etching, all etches away the dielectric of photoresist opening part;
C. cleaning photoetching glue, all removes photoresist;
D. spin coating the first colorized optical filtering material, the hole to dielectric is filled and led up completely;
E. spin coating photoresist development, stay glue in precalculated position;
F. dry method ion etching, all etches away the non-the first colorized optical filtering material that stays glue position;
G. cleaning photoetching glue, all removes photoresist;
H. spin coating photoresist development, at precalculated position opening;
I. dry method ion etching, all etches away the dielectric of photoresist opening part;
J. cleaning photoetching glue, all removes photoresist;
K. spin coating the second colorized optical filtering material, the hole to dielectric is filled and led up completely;
L. repeating step e-j;
M. the third colorized optical filtering material of spin coating, the hole to dielectric is filled and led up completely;
N. cmp, all removes the first of dielectric upper surface, the second and the third colorized optical filtering material.
6. the manufacture method of the imageing sensor of described improvement black-level alignment according to claim 5, it is characterized in that, described the first colorized optical filtering material, the second colorized optical filtering material and the third colorized optical filtering material are that red colorized optical filtering material, green colored filter and blue colored filter sort arbitrarily.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410441377.0A CN104201181B (en) | 2014-09-01 | 2014-09-01 | A kind of imageing sensor for improveing black-level alignment and preparation method thereof |
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| CN201410441377.0A CN104201181B (en) | 2014-09-01 | 2014-09-01 | A kind of imageing sensor for improveing black-level alignment and preparation method thereof |
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| CN104201181B CN104201181B (en) | 2017-06-09 |
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| JP5438374B2 (en) * | 2009-05-12 | 2014-03-12 | キヤノン株式会社 | Solid-state imaging device |
| US8233066B2 (en) * | 2010-02-18 | 2012-07-31 | Omnivision Technologies, Inc. | Image sensor with improved black level calibration |
| JP2013069958A (en) * | 2011-09-26 | 2013-04-18 | Sony Corp | Imaging element, image pickup apparatus, manufacturing apparatus and manufacturing method |
| JP2013145933A (en) * | 2012-01-13 | 2013-07-25 | Sony Corp | Solid state imaging element, solid state imaging device and electronic apparatus |
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