CN104157716A - 三结级联太阳电池及其制作方法 - Google Patents
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Abstract
本发明揭示了一种SiGe支撑三结级联太阳电池的制作方法。基于晶片键合工艺,突破了晶格常数的限制,通过采用GeSi合金作为1.0eV子电池与支撑衬底,在GeSi合金表面键合薄层GaAs作为生长GaInP和GaAs子电池的衬底,然后生长GaAs与GaInP子电池,实现带隙分别为1.89/1.42/1.0eV的三结太阳电池。本发明提出的三结太阳电池,不但减少GaAs衬底的消耗,同时还有效解决了生长三结级联太阳电池材料的晶格失配问题,可获得比GaInP/GaAs/Ge三结电池高的开路电压,有利于转换效率的提高。
Description
技术领域
本发明属于光伏领域,尤其涉及一种GaInP/GaAs/SiGe三结级联太阳电池及其制作方法。
背景技术
作为一种理想的绿色能源材料,太阳电池成为各国的研究热点,为了促进太阳电池的进一步实用化,提高其光电转换效率是其降低发电成本的一种有效手段。叠层电池采用不同禁带宽度的子电池串联能极大的提高太阳光的利用率,目前研究较多而且技术较为成熟的体系是GaInP/GaAs/Ge三结电池,该材料体系在一个太阳下目前达到的最高转换效率为32-33%。然而该三结电池中Ge底电池覆盖较宽的光谱,其短路电流较大,为了实现与其他子电池的电流匹配必然会降低太阳光利用率。
为了进一步提高转换效率,需要对底电池进行拆分,如在GaAs和Ge电池中间插入一带隙为1.00eV的InGaAsN材料,做成四结电池,实现光电流匹配,提高电池效率。但目前制备的InGaAsN材料缺陷多、载流子迁移率低,影响了电池性能的提高。因此研究人员积极寻求别的途径来获得高效的太阳能电池,在GaAs衬底失配生长1.0 eV的InGaAs被证实是可行的,为了节省过渡层个数,一般采用倒装生长的方法,但器件性能相对正装生长有所降低。由于1.0eV的InGaAs与GaAs衬底存在2.1%的晶格失配,其晶体质量很难提高。
如何实现多结太阳电池合理的带隙组合,减小电流失配同时而又不提高电池制作成本和难度成为当前Ⅲ-Ⅴ族太阳电池亟需解决的问题。
发明内容
本发明的目的提供一种GaInP/GaAs/SiGe三结级联太阳电池及其制作方法,可以实现合理的带隙组合,减小电流失配同时而又不提高电池制作成本和难度的电池结构。
为实现上述目的,本发明提供如下技术方案:
一种GaInP/GaAs/SiGe三结级联太阳电池。
作为本发明的进一步改进,所述的三结级联太阳电池包括SiGe子电池,以及依次形成于SiGe子电池上的GaAs键合层、GaAs缓冲层、GaAs子电池、隧道结和GaInP子电池。
作为本发明的进一步改进,所述SiGe子电池是在SiGe合金衬底上实现,采用外延SiGe合金或扩散的方式,形成PN结,形成带隙为1.0 eV的太阳电池。
相应地,本发明还公开了一种三结级联太阳电池的制作方法,在SiGe子电池的表面键合GaAs键合层,然后外延生长GaAs子电池和 GaInP子电池,利用SiGe合金作为1.0 eV电池与支撑衬底,获得三结级联太阳电池。
相应地,本发明还公开了一种三结级联太阳电池的制作方法,包括:
1)在SiGe合金衬底上,采用SiGe合金或扩散的方式,形成扩散结,形成SiGe子电池;
2)在SiGe子电池表面键合GaAs键合层,GaAs键合层与SiGe子电池间的接触形成隧道结,形成外延生长用的模板衬底;
3)在模板衬底上,按照远离模板衬底的方向依次生长GaAs缓冲层、GaAs子电池、隧道结和GaInP子电池;
4)制作正负电极和减反膜,形成目标太阳能电池。
与现有技术相比,本发明的优点在于:
本发明涉及的电池结构可实现晶格匹配的三结级联太阳电池,利用GeSi合金作为1.0 eV电池与支撑衬底,通过键合薄层GaAs并在其上实现带隙能量分别为1.89/1.42 eV的双结太阳电池。该发明既不涉及高成本的过渡层技术,而且利用了成熟的高质量的SiGe合金实现1.0 eV子电池,提高了太阳电池的器件性能,也降低了电池的制作成本。该发明实现了多结太阳电池合理的带隙组合,减小电流失配同时而又不提高电池制作成本和难度。
本发明提出的三结太阳电池,不但减少GaAs衬底的消耗,同时还有效解决了生长三结级联太阳电池材料的晶格失配问题,可获得比GaInP/GaAs/Ge三结电池高的开路电压,有利于转换效率的提高。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请中记载的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1所示为本发明具体实施例中SiGe子电池的制作示意图;
图2所示为本发明具体实施例中模板衬底的制作示意图;
图3所示为本发明具体实施例中制作获得的GaInP/GaAs/SiGe三结级联太阳电池。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行详细的描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护的范围。
GaInP/GaAs/SiGe三结级联太阳电池的制作方法如下:
1)SiGe子电池与模板衬底制备
如图1所示,SiGe子电池的制备:在120-400μm厚的 P型Si0.8Ge0.2合金,通过扩散P或As原子,在表面反型形成扩散结,形成带隙为1.0 eV的太阳电池。
参图2所示,模板衬底的制备:在Si0.8Ge0.2表面键合0.5-10μm的P++ GaAs,GaAs与SiGe间的接触形成隧道结。
2)GaAs子电池与GaInP子电池生长
参图3所示,在模板衬底上,依次生长GaAs子电池与GaInP子电池。其生长次序,按照远离模板衬底的方向依次生长,0.2-1μm GaAs缓冲层,GaAs子电池,隧道结,GaInP子电池,0.2-1μm的 GaAs接触层。
2)电池工艺
接下来进行电池的工艺过程:在电池片的两个表面分别制作正负电极,在栅状上电极上面蒸镀减反膜,最终形成目标太阳能电池。
综上所述,是对本发明一具体实施例的详细描述,对本案保护范围不构成任何限制,凡采用等同变换或者等效替换而形成的技术方法,如采用N型Si0.8Ge0.2合金制作1.0eV的电池;键合N++ GaAs衬底,相对应的在进行GaAs子电池生长前需插入隧道结,等细微结构的改变均落在本发明权利保护范围之内。
需要说明的是,在本文中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上所述仅是本申请的具体实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本申请原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本申请的保护范围。
Claims (5)
1.一种GaInP/GaAs/SiGe三结级联太阳电池。
2.根据权利要求1所述的三结级联太阳电池,其特征在于:所述的三结级联太阳电池包括SiGe子电池,以及依次形成于SiGe子电池上的GaAs键合层、GaAs缓冲层、GaAs子电池、隧道结和GaInP子电池。
3.根据权利要求2所述的三结级联太阳电池,其特征在于:所述SiGe子电池是在SiGe合金衬底上实现,采用外延SiGe合金或扩散的方式,形成PN结,形成带隙为1.0 eV的太阳电池。
4.权利要求1所述的三结级联太阳电池的制作方法,其特征在于,在SiGe子电池的表面键合GaAs键合层,然后外延生长GaAs子电池和 GaInP子电池,利用SiGe合金作为1.0 eV电池与支撑衬底,获得三结级联太阳电池。
5.权利要求1所述的三结级联太阳电池的制作方法,其特征在于,包括:
1)在SiGe合金衬底上,采用外延SiGe合金或扩散的方式,形成PN结,形成带隙为1.0 eV的太阳电池;
2)在SiGe子电池表面键合GaAs键合层,GaAs键合层与SiGe子电池间的接触形成隧道结,形成外延生长用的模板衬底;
3)在模板衬底上,按照远离模板衬底的方向依次生长GaAs缓冲层、GaAs子电池、隧道结和GaInP子电池;
4)制作正负电极和减反膜,形成目标太阳能电池。
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US6340788B1 (en) * | 1999-12-02 | 2002-01-22 | Hughes Electronics Corporation | Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications |
US20110124146A1 (en) * | 2009-05-29 | 2011-05-26 | Pitera Arthur J | Methods of forming high-efficiency multi-junction solar cell structures |
CN102790120A (zh) * | 2012-07-19 | 2012-11-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaInP/GaAs/Ge三结级联太阳能电池及其制备方法 |
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US6340788B1 (en) * | 1999-12-02 | 2002-01-22 | Hughes Electronics Corporation | Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications |
US20110124146A1 (en) * | 2009-05-29 | 2011-05-26 | Pitera Arthur J | Methods of forming high-efficiency multi-junction solar cell structures |
CN102790120A (zh) * | 2012-07-19 | 2012-11-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaInP/GaAs/Ge三结级联太阳能电池及其制备方法 |
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