CN104156318A - Memory management method and device based on heterogeneous fusion architecture - Google Patents
Memory management method and device based on heterogeneous fusion architecture Download PDFInfo
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- CN104156318A CN104156318A CN201410392250.4A CN201410392250A CN104156318A CN 104156318 A CN104156318 A CN 104156318A CN 201410392250 A CN201410392250 A CN 201410392250A CN 104156318 A CN104156318 A CN 104156318A
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Abstract
The invention discloses a memory management method and device based on a heterogeneous fusion architecture. The method comprises the steps of obtaining the sizes of data needing to be stored; the data of different sizes are stored into different memories according to the sizes of the data, wherein when the sizes of the data are smaller than a preset threshold value, the data are stored in the volatile memories; when the sizes of the data are larger than or equal to the preset threshold value, the data are stored in the volatile memories. According to the technical scheme, memory management of the heterogeneous fusion architecture is achieved, and the data processing speed is improved.
Description
Technical field
The present invention relates to large data processing technique, espespecially a kind of EMS memory management process and device based on isomery fusion architecture.
Background technology
The feature of isomery mixing framework is to mix internal memory form, its internal memory comprises can expand Nonvolatile memory and volatile ram, if use traditional memory management, to distinguish different internal memories, wherein Nonvolatile memory has low, the easy bad problem of speed, but have feature capacious, volatile ram has advantages of that speed is high, but capacity is smaller.
Therefore the memory management, how realizing based on isomery fusion architecture for the feature of different internal memories and according to the character of data itself is a problem of needing solution badly.
Summary of the invention
In order to solve the problems of the technologies described above, the invention provides a kind of EMS memory management process and device based on isomery fusion architecture, can realize the memory management of isomery fusion architecture, promote the speed of data processing.
In order to reach the object of the invention, the invention provides a kind of EMS memory management process based on isomery fusion architecture, comprising:
Obtain the size of the data that need to deposit;
According to the size of data, by the deposit data of different sizes in different internal memories;
Wherein, in the time that the size of described data is less than the threshold value setting in advance, by described deposit data in volatile ram; In the time that the size of described data is more than or equal to the threshold value setting in advance, by described deposit data in volatile ram.
Further, before the method, also comprise: setting in advance data name is: data name--label;
Wherein, the initial value of label is set to 0, whenever data are once accessed, the label of described data is increased progressively to processing.
Further, by after described deposit data is in volatile ram, also comprise:
Obtain the label that leaves the data in volatile ram in;
When leaving data in volatile ram in when accessed, the label of these accessed data is increased progressively to processing.
Further, by after described deposit data is in Nonvolatile memory, also comprise:
Obtain the label that leaves the data in Nonvolatile memory in;
When leaving data in Nonvolatile memory in when accessed, the label of these accessed data is increased progressively to processing.
Further, according to the described label that leaves the data in volatile ram or Nonvolatile memory in, adjust the location mode that is placed on the data in internal memory.
Further, adjusting the location mode that is placed on the data in internal memory comprises:
When the label that leaves the data in volatile ram in obtaining is while being less than or equal to the label threshold value setting in advance, by the deposit data in described volatile ram to Nonvolatile memory; In the time that label is greater than the label threshold value setting in advance, described deposit data invariant position.
And,
In the time that the label that leaves the data in Nonvolatile memory in obtaining is greater than the label threshold value setting in advance, by the deposit data in described Nonvolatile memory to volatile ram; In the time that label is less than or equal to the label threshold value setting in advance, described deposit data invariant position.
Further, obtaining the label that leaves the data in volatile ram or in Nonvolatile memory in comprises: according to the described data name that leaves the data in volatile ram or in Nonvolatile memory in, obtain the label of corresponding described data.
Further, volatile ram comprises: PCM region of memory and/or NAND region of memory; Nonvolatile memory comprises: DRAMN internal memory.
The present invention also provides a kind of memory management device based on isomery fusion architecture, comprising: acquisition module and administration module; Wherein,
Acquisition module, for obtaining the size of the data that need to deposit;
Administration module, for according to the size of data, by the deposit data of different sizes in different internal memories is deposited; Wherein, in the time that the size of described data is less than the threshold value setting in advance, by described deposit data in volatile ram; In the time that the size of described data is more than or equal to the threshold value setting in advance, by described deposit data in volatile ram.
Further, this device also comprises: initialization arranges module, is: data name--label for setting in advance data name;
Wherein, the initial value of label is set to 0, whenever data are once accessed, the label of described data is increased progressively to processing.
Further, this device also comprises label processing module, specifically for:
Obtain the label that leaves the data in volatile ram in;
When leaving data in volatile ram in when accessed, the label of these accessed data is increased progressively to processing;
And,
Obtain the label that leaves the data in Nonvolatile memory in;
When leaving data in Nonvolatile memory in when accessed, the label of these accessed data is increased progressively to processing.
Further, administration module also for: according to the label of the described data that leave volatile ram or Nonvolatile memory in, adjust and be placed on the location mode of the data in internal memory.
Further, administration module adjustment is placed on the location mode of the data in internal memory, comprising:
When the label that leaves the data in volatile ram in obtaining is while being less than or equal to the label threshold value setting in advance, by the deposit data in described volatile ram to Nonvolatile memory; In the time that label is greater than the label threshold value setting in advance, described deposit data invariant position.
Further, administration module adjustment is placed on the location mode of the data in internal memory, comprising:
In the time that the label that leaves the data in Nonvolatile memory in obtaining is greater than the label threshold value setting in advance, by the deposit data in described Nonvolatile memory to volatile ram; In the time that label is less than or equal to the label threshold value setting in advance, described deposit data invariant position.
Further, label processing module is obtained the label that leaves the data in volatile ram or in Nonvolatile memory in and is comprised: according to the described data name of depositing the data in volatile ram or in Nonvolatile memory, obtain the label of corresponding described data.
Further, volatile ram comprises: PCM region of memory and/or NAND region of memory; Nonvolatile memory comprises: DRAMN internal memory.
Technical solution of the present invention comprises: the size of obtaining the data that need to deposit; According to the size of data, by the deposit data of different sizes in different internal memories; Wherein, in the time that the size of described data is less than the threshold value setting in advance, by described deposit data in volatile ram; In the time that the size of described data is more than or equal to the threshold value setting in advance, by described deposit data in volatile ram.Technical solution of the present invention has realized the memory management of isomery fusion architecture, has promoted the speed of data processing.
Brief description of the drawings
Accompanying drawing described herein is used to provide a further understanding of the present invention, forms the application's a part, and schematic description and description of the present invention is used for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is the process flow diagram that the present invention is based on the EMS memory management process of isomery fusion architecture;
Fig. 2 is the structural representation that the present invention is based on the memory management device of isomery fusion architecture.
Embodiment
Below in conjunction with drawings and the specific embodiments, the present invention will be described in detail.
Fig. 1 is the process flow diagram that the present invention is based on the EMS memory management process of isomery fusion architecture, as shown in Figure 1, comprises the following steps:
Step 101, obtains the size of the data that need to deposit.
Each data have corresponding with it data name, and data name is made up of data name, label.Wherein, label is for representing the number of times that data are used or access.
Before this step, the method also comprises: setting in advance data name is: data name--label.Wherein, the initial value of label is set to 0, whenever data are once accessed, the label of described data is increased progressively to processing.
Step 102, according to the size of data, by the deposit data of different sizes in different internal memories; Wherein, in the time that the size of described data is less than the threshold value setting in advance, by described deposit data in volatile ram; In the time that the size of described data is more than or equal to the threshold value setting in advance, by described deposit data in volatile ram.
Further, by after deposit data is in volatile ram, the method also comprises: obtain the label that leaves the data in volatile ram in; When leaving data in volatile ram in when accessed, the label of these accessed data is increased progressively to processing.
And by after deposit data is in Nonvolatile memory, the method also comprises: obtain the label that leaves the data in Nonvolatile memory in; When leaving data in Nonvolatile memory in when accessed, the label of these accessed data is increased progressively to processing.
Wherein, obtaining the label that leaves the data in volatile ram or in Nonvolatile memory in comprises: according to the described data name of depositing the data in volatile ram or in Nonvolatile memory, obtain the label of corresponding described data.
Further, according to the label that leaves the data in volatile ram or Nonvolatile memory in, adjust the location mode that is placed on the data in internal memory.
Further, adjusting the location mode that is placed on the data in internal memory comprises:
When the label that leaves the data in volatile ram in obtaining is while being less than or equal to the label threshold value setting in advance, by the deposit data in volatile ram to Nonvolatile memory; In the time that label is greater than the label threshold value setting in advance, deposit data invariant position.
And,
In the time that the label that leaves the data in Nonvolatile memory in obtaining is greater than the label threshold value setting in advance, by the deposit data in described Nonvolatile memory to volatile ram; In the time that label is less than or equal to the label threshold value setting in advance, described deposit data invariant position.
Here the label threshold value setting in advance can be set to 10; also can be set to 20; concrete numerical value is that those skilled in the art can determine according to actual conditions; here 10 or 20 protection domains that are not intended to limit the present invention; belong to conventional techniques means well-known to those skilled in the art about how to arrange, repeat no more here.
In the inventive method, volatile ram comprises: PCM region of memory and/or NAND region of memory; Nonvolatile memory comprises: DRAMN internal memory.
It should be noted that, dividing mode about the page frame to internal memory in the inventive method is: still use existing paging mode for volatile ram, for Nonvolatile memory, because the capacity of Nonvolatile memory is larger, what use is the mode of large page table, and large page table has a page position deck watch.Owing to being limited by the total volume of internal memory, so a page table can be the capacity of 10K in prior art, the present invention can use 100K or higher page table mode, belongs to conventional techniques means well-known to those skilled in the art here, does not repeat them here.
In the inventive method, also it should be noted that in addition, after deposit data is in volatile ram, can also check the remaining storage space of volatile ram, in the time that remaining storage space is little, can will leave data conversion storage in volatile ram in to leaving in Nonvolatile memory.
Fig. 2 is the structural representation that the present invention is based on the memory management device of isomery fusion architecture, as shown in Figure 2, comprising: acquisition module, administration module.Wherein,
Acquisition module, for obtaining the size of the data that need to deposit.
Administration module, for according to the size of data, by the deposit data of different sizes in different internal memories is deposited; Wherein, in the time that the size of described data is less than the threshold value setting in advance, by described deposit data in volatile ram; In the time that the size of described data is more than or equal to the threshold value setting in advance, by described deposit data in volatile ram.
Further, this device also comprises: initialization arranges module, is: data name--label for setting in advance data name.Wherein, the initial value of label is set to 0, whenever data are once accessed, the label of described data is increased progressively to processing.
This device also comprises: label processing module, specifically for:
Obtain the label that leaves the data in volatile ram in;
When leaving data in volatile ram in when accessed, the label of these accessed data is increased progressively to processing;
And,
Obtain the label that leaves the data in Nonvolatile memory in;
When leaving data in Nonvolatile memory in when accessed, the label of these accessed data is increased progressively to processing.
Wherein, label processing module is obtained the label that leaves the data in volatile ram or in Nonvolatile memory in and is comprised: according to this data name of depositing the data in volatile ram or in Nonvolatile memory, obtain label that should data.
Further, administration module also for: according to the label of data that leaves volatile ram or Nonvolatile memory in, adjust the location mode that is placed on the data in internal memory.
Particularly, administration module adjustment is placed on the location mode of the data in internal memory, comprising:
When the label that leaves the data in volatile ram in obtaining is while being less than or equal to the label threshold value setting in advance, by the deposit data in this volatile ram to Nonvolatile memory; In the time that label is greater than the label threshold value setting in advance, this deposit data invariant position.
And,
In the time that the label that leaves the data in Nonvolatile memory in obtaining is greater than the label threshold value setting in advance, by the deposit data in this Nonvolatile memory to volatile ram; In the time that label is less than or equal to the label threshold value setting in advance, this deposit data invariant position.
In device of the present invention, volatile ram comprises: PCM region of memory and/or NAND region of memory etc.; Nonvolatile memory comprises: DRAMN internal memory etc.
One of ordinary skill in the art will appreciate that all or part of step in said method can carry out instruction related hardware by program and complete, described program can be deposited in computer-readable and deposit in medium, as read-only receptacle, disk or CD etc.Alternatively, all or part of step of above-described embodiment also can realize with one or more integrated circuit.Correspondingly, the each module/unit in above-described embodiment can adopt the form of hardware to realize, and also can adopt the form of software function module to realize.The application is not restricted to the combination of the hardware and software of any particular form.
The above, be only preferred embodiments of the present invention, is not intended to limit protection scope of the present invention.Within the spirit and principles in the present invention all, any amendment of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (17)
1. the EMS memory management process based on isomery fusion architecture, is characterized in that, comprising:
Obtain the size of the data that need to deposit;
According to the size of data, by the deposit data of different sizes in different internal memories;
Wherein, in the time that the size of described data is less than the threshold value setting in advance, by described deposit data in volatile ram; In the time that the size of described data is more than or equal to the threshold value setting in advance, by described deposit data in volatile ram.
2. EMS memory management process according to claim 1, is characterized in that, also comprises: setting in advance data name is: data name--label before the method;
Wherein, the initial value of label is set to 0, whenever data are once accessed, the label of described data is increased progressively to processing.
3. EMS memory management process according to claim 2, is characterized in that, described, by after described deposit data is in volatile ram, the method also comprises:
Obtain the label that leaves the data in volatile ram in;
When leaving data in volatile ram in when accessed, the label of these accessed data is increased progressively to processing.
4. EMS memory management process according to claim 2, is characterized in that, described, by after described deposit data is in Nonvolatile memory, the method also comprises:
Obtain the label that leaves the data in Nonvolatile memory in;
When leaving data in Nonvolatile memory in when accessed, the label of these accessed data is increased progressively to processing.
5. according to the EMS memory management process described in claim 3 or 4, it is characterized in that, the method also comprises: according to the described label that leaves the data in volatile ram or Nonvolatile memory in, adjust the location mode that is placed on the data in internal memory.
6. EMS memory management process according to claim 5, is characterized in that, the location mode that described adjustment is placed on the data in internal memory comprises:
When the label that leaves the data in volatile ram in obtaining is while being less than or equal to the label threshold value setting in advance, by the deposit data in described volatile ram to Nonvolatile memory; In the time that label is greater than the label threshold value setting in advance, described deposit data invariant position.
7. EMS memory management process according to claim 5, is characterized in that, the location mode that described adjustment is placed on the data in internal memory comprises:
In the time that the label that leaves the data in Nonvolatile memory in obtaining is greater than the label threshold value setting in advance, by the deposit data in described Nonvolatile memory to volatile ram; In the time that label is less than or equal to the label threshold value setting in advance, described deposit data invariant position.
8. according to the EMS memory management process described in claim 3 or 4, it is characterized in that, obtaining the label that leaves the data in volatile ram or in Nonvolatile memory in comprises: according to the described data name that leaves the data in volatile ram or in Nonvolatile memory in, obtain the label of corresponding described data.
9. according to the EMS memory management process described in claim 1 to 8 any one, it is characterized in that, volatile ram comprises: PCM region of memory and/or NAND region of memory;
Nonvolatile memory comprises: DRAMN internal memory.
10. the memory management device based on isomery fusion architecture, is characterized in that, comprising: acquisition module and administration module; Wherein,
Acquisition module, for obtaining the size of the data that need to deposit;
Administration module, for according to the size of data, by the deposit data of different sizes in different internal memories is deposited; Wherein, in the time that the size of described data is less than the threshold value setting in advance, by described deposit data in volatile ram; In the time that the size of described data is more than or equal to the threshold value setting in advance, by described deposit data in volatile ram.
11. memory management devices according to claim 10, is characterized in that, this device also comprises: initialization arranges module, are: data name--label for setting in advance data name;
Wherein, the initial value of label is set to 0, whenever data are once accessed, the label of described data is increased progressively to processing.
12. memory management devices according to claim 11, is characterized in that, this device also comprises label processing module, specifically for:
Obtain the label that leaves the data in volatile ram in;
When leaving data in volatile ram in when accessed, the label of these accessed data is increased progressively to processing;
And,
Obtain the label that leaves the data in Nonvolatile memory in;
When leaving data in Nonvolatile memory in when accessed, the label of these accessed data is increased progressively to processing.
13. memory management devices according to claim 12, is characterized in that, described administration module also for: according to the label of the described data that leave volatile ram or Nonvolatile memory in, adjust and be placed on the location mode of the data in internal memory.
14. memory management devices according to claim 13, is characterized in that, described administration module adjustment is placed on the location mode of the data in internal memory, comprising:
When the label that leaves the data in volatile ram in obtaining is while being less than or equal to the label threshold value setting in advance, by the deposit data in described volatile ram to Nonvolatile memory; In the time that label is greater than the label threshold value setting in advance, described deposit data invariant position.
15. memory management devices according to claim 13, is characterized in that, described administration module adjustment is placed on the location mode of the data in internal memory, comprising:
In the time that the label that leaves the data in Nonvolatile memory in obtaining is greater than the label threshold value setting in advance, by the deposit data in described Nonvolatile memory to volatile ram; In the time that label is less than or equal to the label threshold value setting in advance, described deposit data invariant position.
16. memory management devices according to claim 12, it is characterized in that, described label processing module is obtained the label that leaves the data in volatile ram or in Nonvolatile memory in and is comprised: according to the described data name of depositing the data in volatile ram or in Nonvolatile memory, obtain the label of corresponding described data.
17. according to claim 10 to the memory management device described in 16 any one, it is characterized in that, volatile ram comprises: PCM region of memory and/or NAND region of memory;
Nonvolatile memory comprises: DRAMN internal memory.
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