CN104134849A - High-gain semiconductor single-polarized oscillator with convergence gap - Google Patents

High-gain semiconductor single-polarized oscillator with convergence gap Download PDF

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Publication number
CN104134849A
CN104134849A CN201410316600.9A CN201410316600A CN104134849A CN 104134849 A CN104134849 A CN 104134849A CN 201410316600 A CN201410316600 A CN 201410316600A CN 104134849 A CN104134849 A CN 104134849A
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described
oscillator
high
provided
semiconductor
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CN201410316600.9A
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CN104134849B (en
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胡洁维
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胡洁维
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Abstract

The invention discloses a high-gain semiconductor single-polarized oscillator with a convergence gap. With the adoption of a favorable structural design, a semiconductor is creatively applied onto an oscillator piece, a semiconductor structure is combined with the oscillator, through continual tests, the rectangular metal oscillator piece is designed and a semiconductor ring is arranged at the periphery of the oscillator piece, with the adoption of the structural design on the metal oscillator piece, flow length and speed of radiation signal stream on the metal oscillator piece are greatly improved, the working frequency band of the broadband antenna reaches 3,000MHz through simulation of a large number of computer software, the standard of 4G (four-generation) on frequency requirement is completely satisfied, relative bandwidth reaches 65.9 percent, the high-gain semiconductor single-polarized oscillator has favorable gain and characteristics of front-to-rear ratio and cross polarization ratio.

Description

A kind of high-gain semiconductor single polarization oscillator with convergence breach

Technical field

The present invention relates to field of antenna, be specifically related to a kind of high-gain semiconductor single polarization oscillator with convergence breach.

Background technology

At present, 4G network is more and more universal, and 5G network has also appearred in some country; From the angle of operator, for reduce investment outlay and consider follow-uply how to realize extendible capacity, compatibility, multisystem, multi-modulation scheme coexists more and more becomes a kind of trend.So antenna for base station is also had higher requirement, for meeting the frequency of different systems, the ultrabroad band antenna for base station such as 2000 ~ 3000MHz frequency range are extensively proposed; And to realize the broadband of antenna for base station, what first will face is exactly the bandwidth expansion problem as the radiating element of its core component, how in the frequency band of whole broadband, keep higher gain, wave beam convergence consistency, good front and back when high cross polarization ratio be a no small challenge; Especially ultrabroad band problem, meets 5G and 4G(LTE) etc. the oscillator that requires of high band and the antenna made from this oscillator be all to need the problem that will solve badly.

Summary of the invention

The object of the invention is to overcome above-described shortcoming, provide a kind of super wide radiation frequency, good front and back than and the high-gain semiconductor single polarization oscillator of the band convergence breach of high cross polarization characteristic.

For achieving the above object, concrete scheme of the present invention is as follows: the high-gain semiconductor single polarization oscillator of band convergence breach, include a support Ba Lun plate, described support Ba Lun plate is provided with upper and lower symmetrically arranged two, is just rectangular metal oscillator sheet, for radiation single polarization signal; Between described upper and lower two metal oscillator sheets, be provided with the first feed band line, described support Ba Lun plate is provided with the first coaxial cable feed hole, and described the first coaxial cable feed hole is electrically connected to the first feed band line;

The edge of described each metal oscillator sheet is provided with outer cage ring, on described each metal oscillator sheet, near both sides, be respectively equipped with a plurality of the first isolation blocking-up holes that are arranged side by side, middle part on described each metal oscillator sheet is also provided with a plurality of the second isolation blocking-up holes that are arranged side by side, and the second isolation blocking-up hole is rectangle; Described outer cage ring is semiconductor, in described the first isolation blocking-up hole and the second isolation blocking-up hole, all fills and is provided with semiconductor;

Described each metal oscillator sheet is provided with the rectifier structure for rectification away from a side that supports Ba Lun plate, and described rectifier structure is rectangle, and described rectifier structure includes a plurality of rectifier tanks that are arranged side by side, and is provided with rectification road between rectifier tank; In described rectifier tank, also all fill and be provided with semiconductor; One side of the close rectification mechanism of described outer cage ring is provided with the convergence breach of V-arrangement.

Wherein, described the first isolation blocking-up hole is Parallel Rectangular; The upper following length in described the first isolation blocking-up hole is 4mm-7mm.

Wherein, described semiconductor is gallium arsenide semiconductor.

Wherein, the thickness of described each metal oscillator sheet is 2mm-2.5mm.

Wherein, the quantity in described the first isolation blocking-up hole is eight.

Wherein, the quantity in described the second isolation blocking-up hole is five.

Wherein, described support Ba Lun plate is circular; Described support Ba Lun plate is pcb board, and its diameter is 10cm.

Wherein, the wide of described metal oscillator sheet is 6cm.

Beneficial effect of the present invention is: by good structural design, creationary semiconductor is applied on oscillator sheet, semiconductor structure is combined with oscillator, by continuous experiment, design rectangular metal oscillator sheet and be arranged with semiconductor circle outward, and the structural design on metal oscillator sheet, its radiation signal stream flows to length and speed is all greatly improved at metal oscillator sheet, emulation by a large amount of computer softwares show that it has working band and has reached 3000MHz, meet 4G and 5G of future generation completely to frequency requirement standard, relative bandwidth reaches 65.9%, and it has good gain, front and back ratio, cross polarization specific characteristic.

Accompanying drawing explanation

Fig. 1 is vertical view of the present invention;

Fig. 2 is the partial enlarged drawing of Fig. 1;

Fig. 3 is that radiation signal is running into minute flow graph of rectification mechanism;

Fig. 4 is profile of the present invention;

Fig. 5 is bandwidth emulation experiment datagram of the present invention;

Fig. 6 is gain emulation experiment datagram of the present invention;

Description of reference numerals in Fig. 1 to Fig. 6:

1-supports Ba Lun plate; 10-restrains breach;

11-the first feed band line;

11a-the first coaxial cable feed;

3-metal oscillator sheet;

The outer cage ring of 4-;

5-rectifier structure; 51-rectification road;

6-the first isolation blocking-up hole;

7-the second isolation blocking-up hole;

9-obstructs hole.

Embodiment

Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation, is not practical range of the present invention is confined to this.

As shown in Figures 1 to 6, the high-gain semiconductor single polarization oscillator of the band convergence breach described in the present embodiment, includes a support Ba Lun plate 1, and described support Ba Lun plate 1 is provided with upper and lower two symmetrically arranged two the metal oscillator sheets 3 that are rectangle; Described upper and lower two metal oscillator sheets 3 are for radiation perpendicular polarization signal or radiation level polarized signal; Between described upper and lower two metal oscillator sheets 3, be provided with the first feed band line 1; Described support Ba Lun plate 1 is provided with the first coaxial cable feed 11a hole, and described the first coaxial cable feed 11a hole is electrically connected to the first feed band line 11; The edge of described each metal oscillator sheet 3 is provided with outer cage ring 4, on described each metal oscillator sheet 3, near both sides, be respectively equipped with a plurality of the first isolation blocking-up holes 6 that are arranged side by side, middle part on described each metal oscillator sheet 3 is also provided with a plurality of 7, the second isolation blocking-up holes 7, the second isolation blocking-up hole that are arranged side by side and is circle; Described outer cage ring 4 is semiconductor, and described the first isolation blocking-up hole 6 and the second interior all fillings in isolation blocking-up hole 7 are provided with semiconductor; Described each metal oscillator sheet 3 is provided with the rectifier structure 5 for rectification away from a side that supports Ba Lun plate 1, and described rectifier structure 5 is rectangle, and described rectifier structure 5 includes a plurality of rectifier tanks that are arranged side by side, and is provided with rectification road 51 between rectifier tank; In described rectifier tank, also all fill and be provided with semiconductor.In the high-gain semiconductor single polarization oscillator of the band convergence breach described in the present embodiment, described the first isolation blocking-up hole 6 is rectangle; The upper following length in described the first isolation blocking-up hole 6 is 4mm-7mm.Further, after the coaxial cable in the first coaxial cable feed 11a hole is connected with its feed, be connected and realize feed with the first feed band line 11, the distributed diffusion of radiation current, its signal trend is isolated behind blocking-up hole 7 by the first isolation blocking-up hole 6 and second, it has possessed higher convergence and superelevation gain and super wide frequency band, and by emulation of the computer software, it longitudinally gains and reached nearly 13dBi, described the second isolation blocking-up hole 7 is circle, by emulation of the computer software, learns, stationarity while flowing through that the second circular isolation blocking-up hole 7 can effectively increase radiation signal, relatively with have the structure of corner angle to be more suitable for irradiation stability to require high oscillator needs, emulation by a large amount of computer softwares show that it has working band and has reached 3000MHz, higher than current 4G frequency range, in the larger situation of described signal flow-disturbing, it is provided with the rectifier structure 5 for rectification at metal oscillator sheet 3 away from a side that supports Ba Lun plate 1, described rectifier structure 5 is rectangle, described rectifier structure 5 includes a plurality of rectifier tanks that are arranged side by side, between rectifier tank, be provided with rectification road 51, through over commutation passage, it has possessed fringe radiation signal more stably, by emulation of the computer software, learn, make its gain more stable, convergence ratio is high, front and back are than outstanding feature, the edge of described each metal oscillator sheet 3 is provided with outer cage ring 4, described outer cage ring 4 is semiconductor, outer cage ring 4 effectively increases oscillator isolation for semiconductor energy, it is learnt by emulation of the computer software, its isolation reaches 50db, far above common oscillator, use semi-conductive outer cage ring 4, it also possesses preferably wave beam convergence consistency.Described the first isolation blocking-up hole 6 and second isolation blocking-up hole 7 is interior all fills and be provided with semiconductor, has increased gain, has further increased frequency bandwidth, and the emulation by a large amount of computer softwares show that it has working band and has reached nearly 3000MHz, by good structural design, creationary semiconductor is applied on oscillator sheet, semiconductor structure is combined with oscillator, by continuous experiment, design rectangle metal oscillator sheet 3 and be arranged with semiconductor circle outward, and the structural design on metal oscillator sheet 3, its radiation signal stream flows to length and speed is all greatly improved at metal oscillator sheet 3, emulation by a large amount of computer softwares show that it has working band and has reached 3000MHz, meet 4G and 5G of future generation completely to frequency requirement standard, relative bandwidth reaches 65.9%, and it has good gain, front and back ratio, cross polarization specific characteristic.Described metal oscillator sheet 3 is rectangle, and each angle is chamfering structure, can in the situation that keeping electric current broadening wider, keep the ultimate range between oscillator sheet, increases its isolation, strengthens the antijamming capability of oscillator part.

In the high-gain semiconductor single polarization oscillator of the band convergence breach described in the present embodiment, described semiconductor is gallium arsenide semiconductor; By experiment and emulation of the computer software learn, the best results of gallium arsenide semiconductor, its good characteristic of semiconductor has increased frequency band range of the present invention and has improved oscillator irradiation stability.

In the high-gain semiconductor single polarization oscillator of the band convergence breach described in the present embodiment, the thickness of described each metal oscillator sheet 3 is 2mm-2.5mm; By emulation experiment and structural design repeatedly, adjust, when the thickness of metal oscillator sheet 3 is 2mm-2.5mm, its radiation current is the most steady, and radiation is the most stable, is difficult for producing the jammr bands such as standing wave, and convergence is consistent.

The diameter in described the second isolation blocking-up hole 7 is 8mm; By emulation experiment and structural design repeatedly, adjust, when the diameter in described the second isolation blocking-up hole 7 is 8mm, make it have good gain extension, laterally gain also approaches 6dBi.The quantity in described the first isolation blocking-up hole 6 is eight; The quantity in described the second isolation blocking-up hole 7 is five, and by Computer Simulation, during this quantity, its effect is better.

Described support Ba Lun plate 1 is circular; Described support Ba Lun plate 1 is pcb board, and its diameter is 10cm; So design, learns by emulation of the computer software, and its isolation is larger.

Each length of side of described metal oscillator sheet 3 is 6cm; When each length of side is 6cm, its longitudinal length is just in time the half-wave length of radiation wavelength, so its good stability, does not produce clutter.

In the high-gain semiconductor single polarization oscillator of band described in the present embodiment convergence breach, between described two the second adjacent isolation blocking-up holes 7, be also provided with a plurality of holes 9 that obstruct, described in obstruct the interior filling in hole 9 and be provided with semiconductor; The described hole 9 that obstructs can further increase flow-disturbing effect, increases bandwidth, by emulation of the computer software, learns, it can increase by approximately 3% bandwidth.

In the high-gain semiconductor single polarization oscillator of the band convergence breach described in the present embodiment, one side of the close rectification mechanism of described outer cage ring 4 is provided with the convergence breach 10 of V-arrangement, it can effectively increase convergence and isolation, and by Computer Simulation, its performance has good convergence.

The above is only a preferred embodiment of the present invention, and the equivalence of doing according to structure, feature and principle described in patent claim of the present invention therefore all changes or modifies, and is included in the protection range of patent application of the present invention.

Claims (8)

  1. One kind with convergence breach high-gain semiconductor single polarization oscillator, include a support Ba Lun plate (1), it is characterized in that: described support Ba Lun plate (1) is provided with upper and lower symmetrically arranged two, is just rectangular metal oscillator sheet (3), for radiation single polarization signal; Between described upper and lower two metal oscillator sheets (3), be provided with the first feed band line (11), described support Ba Lun plate (1) is provided with the first coaxial cable feed (11a) hole, and described the first coaxial cable feed (11a) hole is electrically connected to the first feed band line (11);
    The edge of described each metal oscillator sheet (3) is provided with outer cage ring (4), described each metal oscillator sheet (3) is upper is respectively equipped with a plurality of the first isolation blocking-up holes (6) that are arranged side by side near both sides, middle part on described each metal oscillator sheet (3) is also provided with a plurality of the second isolation blocking-up holes (7) that are arranged side by side, and the second isolation blocking-up hole (7) is circle; Described outer cage ring (4) is semiconductor, in described the first isolation blocking-up hole (6) and the second isolation blocking-up hole (7), all fills and is provided with semiconductor;
    Described each metal oscillator sheet (3) is provided with the rectifier structure (5) for rectification away from a side that supports Ba Lun plate (1), described rectifier structure (5) is rectangle, described rectifier structure (5) includes a plurality of rectifier tanks that are arranged side by side, and is provided with rectification road (51) between rectifier tank; In described rectifier tank, also all fill and be provided with semiconductor; One side of the close rectification mechanism of described outer cage ring (4) is provided with the convergence breach (10) of V-arrangement.
  2. 2. a kind of high-gain semiconductor single polarization oscillator with convergence breach according to claim 1, is characterized in that: described the first isolation blocking-up hole (6) is Parallel Rectangular; The upper following length in described the first isolation blocking-up hole (6) is 4mm-7mm.
  3. 3. a kind of high-gain semiconductor single polarization oscillator with convergence breach according to claim 1, is characterized in that: described semiconductor is gallium arsenide semiconductor.
  4. 4. a kind of high-gain semiconductor single polarization oscillator with convergence breach according to claim 1, is characterized in that: the thickness of described each metal oscillator sheet (3) is 2mm-2.5mm.
  5. 5. a kind of high-gain semiconductor single polarization oscillator with convergence breach according to claim 1, is characterized in that: the quantity in described the first isolation blocking-up hole (6) is eight.
  6. 6. a kind of high-gain semiconductor single polarization oscillator with convergence breach according to claim 1, is characterized in that: the quantity in described the second isolation blocking-up hole (7) is five.
  7. 7. a kind of high-gain semiconductor single polarization oscillator with convergence breach according to claim 1, is characterized in that: described support Ba Lun plate (1) is for circular; Described support Ba Lun plate (1) is pcb board, and its diameter is 10cm.
  8. 8. a kind of high-gain semiconductor single polarization oscillator with convergence breach according to claim 1, is characterized in that: the wide of described metal oscillator sheet (3) is 6cm.
CN201410316600.9A 2014-07-06 2014-07-06 A kind of high-gain quasiconductor single polarization oscillator of band convergence breach CN104134849B (en)

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CN201410316600.9A CN104134849B (en) 2014-07-06 2014-07-06 A kind of high-gain quasiconductor single polarization oscillator of band convergence breach

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CN201410316600.9A CN104134849B (en) 2014-07-06 2014-07-06 A kind of high-gain quasiconductor single polarization oscillator of band convergence breach

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018112987A1 (en) * 2016-12-25 2018-06-28 胡洁维 Bipolar element antenna

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6369759B1 (en) * 1999-06-09 2002-04-09 California Institute Of Technology Rectenna for high-voltage applications
CN101562359A (en) * 2009-05-26 2009-10-21 上海大学 High-conversion efficiency circularly polarized rectenna
US20110242863A1 (en) * 2010-03-31 2011-10-06 Kookmin University Industry Academy Cooperation Foundation Patch antenna and rectenna using the same
CN202749497U (en) * 2012-07-26 2013-02-20 郭正韦华 Internet of things (IOT) circularly polarized antenna

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6369759B1 (en) * 1999-06-09 2002-04-09 California Institute Of Technology Rectenna for high-voltage applications
CN101562359A (en) * 2009-05-26 2009-10-21 上海大学 High-conversion efficiency circularly polarized rectenna
US20110242863A1 (en) * 2010-03-31 2011-10-06 Kookmin University Industry Academy Cooperation Foundation Patch antenna and rectenna using the same
CN202749497U (en) * 2012-07-26 2013-02-20 郭正韦华 Internet of things (IOT) circularly polarized antenna

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018112987A1 (en) * 2016-12-25 2018-06-28 胡洁维 Bipolar element antenna

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