CN104124337A - Method for manufacturing phase change memory unit - Google Patents
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- CN104124337A CN104124337A CN201410335807.0A CN201410335807A CN104124337A CN 104124337 A CN104124337 A CN 104124337A CN 201410335807 A CN201410335807 A CN 201410335807A CN 104124337 A CN104124337 A CN 104124337A
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Abstract
The invention relates to a method for manufacturing a phase change memory unit. A preparation method for a TiON transition layer is provided in allusion to a phase change memory unit structure with a heating electrode transition layer material TiON. A method for processing TiN by oxygen plasmas is used, uniform controllable preparation of the TiON material is achieved under the condition of not increasing workmanship complexity of a phase change memory, the preparation method is simple, easy to implement and completely compatible with a semiconductor technology, the heating efficiency of a heating electrode can be effectively increased, and operating current and power consumption of the phase change memory are lowered.
Description
Technical field
The present invention relates to microelectronics technology, or rather, relate to the preparation method of TiON heating buffer layer material.
Background technology
Phase transition storage technology is at late 1960s (Phys.Rev.Lett. based on Ovshinsky, 21,1450～1453,1968) beginning of the seventies (Appl.Phys.Lett., 18,254～257,1971) phase-change thin film proposing can be applied to that the conception of phase change memory medium sets up, and is the memory device of a kind of low price, stable performance.Phase transition storage can be made in silicon wafer substrate, and its critical material is recordable phase-change thin film, heating electrode material, heat-insulating material and extraction electrode material etc.The general principle of phase transition storage is to utilize electric impulse signal to act on device cell, make phase-change material, between amorphous state and polycrystalline state, reversible transition occur, low-resistance when high resistant during by resolution amorphous state and polycrystalline state, can realize writing, wipe and read operation of information.
Phase transition storage is due to the advantage such as have high speed, high density, high erasable cycle-index, non-volatile, low in energy consumption, processing compatibility is good, thought flash memories that most possible replacement is current and become following memory main product and become at first the device of commercial product by international semiconductor TIA.
The research of memory is always towards the future development of high speed, high density, low-power consumption.Mechanism's great majority of being engaged in the world at present phase transition storage R&D work are major companies of semicon industry, the focus that they pay close attention to all concentrates in the commercialization that realizes how as early as possible phase transition storage, therefore corresponding study hotspot also just launches around its device technology: the physical mechanism research of device, comprise the operating current that how to reduce device, reduce power consumption; Device structure design and Ultrahigh research etc.; The manufacturing process research of high-density device array, comprises how realizing the nanoscale problem of device cell, technological problems, the Problem of Failure of device cell etc. of high-density device chip.Wherein the power-dissipation-reduced of device is very crucial and important, because the phase transition process of phase transformation memory device unit finally will lean on the driving of the complementary oxide semiconductor tube of metal to realize, for realize with high density memory chips in CMOS tube power match, the essential power consumption that reduces device.The method that reduces device power consumption has: the contact area that reduces electrode and phase-change material; Improve the resistance of phase-change material; Between electrode and phase-change material or the inner thermoresistance layer etc. that adds of phase-change material.Be considered to more simple method and add heating electrode between electrode and phase-change material, conventionally the heating electrode material adopting at present has W (IEDM, 897,2003), TiN (IEDM, 901,2003), TiON (Jpn.J.Appl.Phys., 43 (8A): 5243,2004, J.Appl.Phys., 100:054506, 2006), TiSiN (Semicond.Sci.Technol., 2006, 21 (8): 1196-1201), SiTaN (J.Electrochemical Society, 2006, 153 (7): G685-G691), GeSi (Appl.Phys.Lett., 2006, 89:053517), GeSiN (Appl.Phys.Lett., 2007, 91:073505), polysilicon (Appl.Phys.Lett., 2008, 92:113503), SiSb (Electrochemical and Solid-State Letters, 2008, 11 (6): H147-H149), WO
3(Appl.Phys.Lett., 2008,92:223507), C
60(Appl.Phys.Lett., 2008,92:013109) and CeO
2(Appl.Phys.Lett., 2010,96:203504) etc., wherein TiON is not only completely compatible with semiconductor technology, and effect is fine.Seek a kind of simplely and just seem extremely important with the completely compatible TiON preparation method of semiconductor technology, this is starting point of the present invention just.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of preparation method of phase-changing memory unit, for reaching and semiconductor technology compatible transition zone preparation method's effect completely.
For achieving the above object and other relevant objects, the invention provides a kind of preparation method of phase-changing memory unit, the method comprises the following steps:
1) provide a substrate;
2) on described substrate, form lower electrode layer;
3) on described lower electrode layer, form heating electrode TiN material layer;
4) on described heating electrode material layer, adopt oxygen plasma treatment to form transition zone;
5) on described transition zone, form phase-change material layers;
6) on described phase-change material layers, form adhesion layer;
7) on described adhesion layer, form upper electrode layer;
8) on described lower electrode layer, form extracting electrode layer;
9) continue follow-up common process to form phase-changing memory unit.
Preferably, described step 3) in the material of heating electrode material layer be TiN.
Preferably, described step 4) in form and adopt capacitance coupling plasma generator when transition zone; Its radio frequency is 60MHz; Oxygen flow is 500-1500SCCM; Bias power is 600-1800W; Cavity air pressure is 100-300mTorr; Cavity temperature is 20 DEG C.
Preferably, described step 4) in the oxygen plasma treatment time be 2-30s while forming transition zone.
Preferably, described step 4) in form transition region thickness be 0.5-5nm.
The present invention utilizes oxygen plasma treatment to make the oxidation of TiN heating electrode, obtains very thin TiON heating electrode buffer layer material, and method is simple, completely compatible with semiconductor technology.Adopt the efficiency of heating surface of the phase-changing memory unit that comprises TiON heating buffer layer material of said method making to be significantly improved, operating current and the power consumption of device obviously reduce.
Brief description of the drawings
Fig. 1 is shown as the structural representation of preparing lower electrode layer;
Fig. 2 is shown as the structural representation of preparing heating electrode material layer on lower electrode layer;
Fig. 3 is shown as the structural representation of preparing heating electrode transition zone on heating electrode material layer;
Fig. 4 is shown as the structural representation of preparing phase-change material layers on heating electrode transition prepared layer;
Fig. 5 is shown as the structural representation of preparing electrode and phase-change material adhesion layer on phase-change material layers;
Fig. 6 is shown as the structural representation of preparing upper electrode layer on electrode and phase-change material adhesion layer;
Fig. 7 is shown as the structural representation of preparing extracting electrode layer on lower electrode layer;
Fig. 8 is shown as TiN heating electrode and generates after oxygen plasma treatment 15s the section high-resolution TEM figure of TiON transition zone.
Fig. 9 is shown as the phase-changing memory unit sectional tem figure that comprises heating electrode buffer layer material.
Element numbers explanation
10 substrates
20 insulating medium layers
100 bottom electrodes
200 heating electrode material layers
300 heating electrode transition zones
400 phase-change material layers
500 adhesion layers
600 top electrodes
700 extraction electrodes
Embodiment
Below, by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification.The present invention can also be implemented or be applied by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change not deviating under spirit of the present invention.
Refer to shown in accompanying drawing.It should be noted that, the diagram providing in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy and only show with assembly relevant in the present invention in graphic but not component count, shape and size drafting while implementing according to reality, when its actual enforcement, kenel, quantity and the ratio of each assembly can be a kind of random change, and its assembly layout kenel also may be more complicated.
The phase change memory unit structure that the present invention comprises heating electrode buffer layer material is specific as follows: a kind of phase-changing memory unit that comprises heating electrode buffer layer material, and this phase change memory structure comprises the substrate 10 of channel devices such as being prepared with some triodes or diode; On described substrate 10, prepare some bottom electrodes 100; On described lower electrode layer, prepare heating electrode material layer 200; On described heating electrode material layer, prepare heating electrode transition material layer 300; On described heating electrode transition material layer, prepare phase-change material layers 400; On described phase-change material layers, prepare the adhesion layer 500 of electrode and phase-change material; On the adhesion layer of described electrode and phase-change material, prepare upper electrode layer 600; On described substrate, prepare extracting electrode layer 700; By integrated by control switch and the peripheral circuit of interconnection circuit and device cell to top electrode and extraction electrode, prepare phase transformation memory device unit.
The manufacture method of the phase-changing memory unit that the present invention comprises heating electrode buffer layer material TiON specifically comprises the following steps:
A) on the substrate that comprises the driving element such as triode or diode, prepare lower electrode layer, the preparation method who adopts is: first on substrate, deposit one deck insulating medium layer, then adopt exposure and etching technics etching directly over driving element to prepare hole, until expose driving element completely, then in hole, fill lower electrode layer, make it and driving element good contact, finally adopt CMP (Chemical Mechanical Polishing) process to grind the lower electrode layer of removing on insulating medium layer, until the lower electrode layer beyond hole is removed completely, the preparation method of insulating medium layer and lower electrode layer is sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, in atomic vapor deposition method and atomic layer deposition method any, insulating medium layer be in silica, silicon nitride and silicon oxynitride any, lower electrode material is any in monometallic material W, Pt, Au, Ti, Al, Ag, Cu and Ni, or it is combined into alloy material, or by nitride or the oxide of described electrode monometallic material, adopt exposure and etching technics that lower electrode layer etching is divided into circle or square configuration,
B) on the lower electrode layer that step a makes, prepare heating electrode material layer, the preparation method who adopts is: first on lower electrode layer, deposit one deck insulating medium layer, then adopt exposure and etching technics etching directly over lower electrode layer to prepare hole, until expose lower electrode layer completely, then in hole, fill heating electrode layer, make it and lower electrode layer good contact, finally adopt CMP (Chemical Mechanical Polishing) process to grind the heating electrode layer of removing on insulating medium layer, until the heating electrode layer beyond hole is removed completely, the preparation method of insulating medium layer and heating electrode layer is sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, in atomic vapor deposition method and atomic layer deposition method any, insulating medium layer be in silica, silicon nitride and silicon oxynitride any, heating electrode material is TiN,
C) on the heating electrode material layer that step b makes, prepare heating electrode transition material layer, the method adopting is for adopting oxygen plasma treatment TiN, heating electrode buffer layer material is TiON, and its thickness is 0.5-5nm, and the oxygen plasma treatment time is 2-30s; While forming above-mentioned transition zone, adopt capacitance coupling plasma generator; Its radio frequency is 60MHz; Oxygen flow is 500-1500SCCM; Bias power is 600-1800W; Cavity air pressure is 100-300mTorr; Cavity temperature is 20 DEG C.
D) step c make heating electrode transition material layer on prepare phase-change material layers, the phase-change material layers preparation method who adopts be in sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method and atomic layer deposition method any; Phase-change material is any in chalcogenide compound, GeSb, SiSb and metal oxide;
E) on the phase-change material layers that steps d is made, prepare the adhesion layer of electrode and phase-change material, the adhesion layer preparation method who adopts be in sputtering method, evaporation, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, atomic vapor deposition method and atomic layer deposition method any; Adhesion layer material is any nitride or the nitrogen oxide in monometallic material Ge, Ti, Al, Ta, TiAl and TiSi; Adopt exposure and etching technics phase-change material layers and adhesion layer etching to be divided into the shape of circle, square, strip;
F) on the electrode that step e makes and the adhesion layer of phase-change material, prepare upper electrode layer, the preparation method who adopts is: first on phase-change material layers and adhesion layer figure, deposit one deck insulating medium layer, adopt again CMP (Chemical Mechanical Polishing) process insulating medium layer flattening surface, then adopt exposure and etching technics etching directly over phase-change material layers and adhesion layer figure to prepare hole, until adhesion layer exposes completely, then in hole, fill upper electrode layer, make it and phase-change material adhesion layer good contact, finally adopt CMP (Chemical Mechanical Polishing) process to grind the upper electrode layer of removing on insulating medium layer, until the upper electrode layer beyond hole is removed completely, it is sputtering method that insulating medium layer and upper electrode layer are prepared adopted method, evaporation, galvanoplastic, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, in atomic vapor deposition method and atomic layer deposition method any, insulating medium layer be in silica, silicon nitride and silicon oxynitride any, or the multilayer material being formed by above-mentioned dielectric material, upper electrode material is any in monometallic material W, Pt, Au, Ti, Al, Ag, Cu and Ni, or it is combined into alloy material, or by nitride or the oxide of described electrode monometallic material,
G) on the lower electrode layer that step a makes, prepare extracting electrode layer, the preparation method who adopts is: adopt exposure and etching technics etching insulating medium layer directly over the driving element of substrate to prepare hole, until driving element exposes completely, then in hole, fill extracting electrode layer, make it and driving element good contact, finally adopt CMP (Chemical Mechanical Polishing) process to grind the extracting electrode layer of removing on insulating medium layer, until the extracting electrode layer beyond hole is removed completely, it is sputtering method that extracting electrode layer is prepared adopted method, evaporation, galvanoplastic, chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, Low Pressure Chemical Vapor Deposition, metallic compound vapour deposition process, molecular beam epitaxy, in atomic vapor deposition method and atomic layer deposition method any, extraction electrode material is any in monometallic material W, Pt, Au, Ti, Al, Ag, Cu and Ni, or it is combined into alloy material, or by nitride or the oxide of described electrode monometallic material,
Top electrode and the extraction electrode of the phase transformation memory device unit of h) finally above-mentioned steps being made are integrated by control switch and the peripheral circuit of interconnection circuit and device cell, prepare phase transformation memory device unit, the processing method adopting is conventional semiconductor technology; Be any in W, Pt, Au, Ti, Al, Ag, Cu and Ni as the material of interconnection circuit, or it is combined into alloy material.
Embodiment 1
Refer to shown in accompanying drawing, the preparation process of the phase-changing memory unit that the present invention comprises heating electrode buffer layer material is specific as follows:
Step 1: (on substrate 10) prepares lower electrode layer 100 in the source that comprises triode driver part, the method adopting is chemical vapour deposition technique; Lower electrode material is W; Refer to shown in Fig. 1.
Step 2: prepare heating electrode material layer 200 on the lower electrode layer 100 of making in step 1, the method adopting is atomic layer deposition method; In the present embodiment, heating electrode material is TiN; The diameter of heating electrode is 35nm; Refer to shown in Fig. 2.
Step 3: refer to shown in Fig. 3, on the heating electrode material layer 200 of making in step 2, prepare heating electrode transition material layer 300, the method adopting is for adopting oxygen plasma treatment TiN material, and in the present embodiment, the plasma generation equipment adopting is capacitance coupling plasma generator; It is 60MHz that plasma produces equipment radio frequency; Oxygen flow is 1000SCCM; Bias power is 1200W; Cavity air pressure is 200mTorr; Cavity temperature is 20 DEG C; The oxygen plasma treatment time is 15s, and heating electrode buffer layer material is TiON, and as shown in Figure 8, its thickness is 3nm to the section high-resolution TEM picture of the TiON buffer layer material obtaining;
Step 4: prepare phase-change material layers 400 on the heating electrode transition material layer 300 of making in step 3, the method adopting is sputtering method; In the present embodiment, phase-change material is Ge
2sb
2te
5; Phase-change material thickness is 100nm; Refer to shown in Fig. 4.
Step 5: prepare the adhesion layer 500 of electrode and phase-change material on the phase-change material layers 400 of making in step 4, the method adopting is sputtering method; Wherein, in the present embodiment, adhesion layer material is TiN; TiN thickness is 20nm; As shown in Figure 5.
Step 6: prepare upper electrode layer 600 on the electrode of making in step 5 and the adhesion layer of phase-change material 500, the method adopting is chemical vapour deposition technique; In the present embodiment, upper electrode material is W; Top electrode diameter is 70nm; As shown in Figure 6.
Step 7: (on substrate 10) prepares extracting electrode layer 700 on the drain terminal that comprises triode driver part, the method adopting is galvanoplastic; In the present embodiment, extraction electrode material is Cu; Extraction electrode diameter is 70nm; As shown in Figure 7.
Step 8: top electrode and the extraction electrode of the phase transformation memory device unit that above-mentioned steps is made are integrated by control switch and the peripheral circuit of interconnection circuit and device cell, prepare phase transformation memory device unit, as shown in Figure 9, the processing method adopting is 40nm standard CMOS process.
Embodiment 2
Step 3 in embodiment 1 is changed into: on the heating electrode material layer 200 that step 2 is made, prepare heating electrode transition material layer 300, the method adopting is for adopting oxygen plasma treatment TiN, and the plasma generation equipment adopting is capacitance coupling plasma generator; It is 60MHz that plasma produces equipment radio frequency; Oxygen flow is 1000SCCM; Bias power is 1200W; Cavity air pressure is 200mTorr; Cavity temperature is 20 DEG C; The oxygen plasma treatment time is 30s, and heating electrode buffer layer material is TiON, and the thickness of the TiON buffer layer material obtaining is 5nm, and all the other are identical with embodiment 1.
Embodiment 3
Step 2 in embodiment 1 and 2 is changed into: on the lower electrode layer 100 that step 1 is made, prepare heating electrode material layer 200, the method adopting is chemical vapour deposition technique; Heating electrode material is TiN; The diameter of heating electrode is 35nm; All the other are identical with embodiment 1 and 2.
Embodiment 4
Step 2 in embodiment 1,2 and 3 is changed into: on the lower electrode layer 100 that step 1 is made, prepare heating electrode material layer 200, the heating electrode material adopting is TiN; The cross sectional dimensions of heating electrode is as follows: length is that 63nm, width are 7nm; All the other are identical with embodiment 1,2 and 3.
The present invention utilizes oxygen plasma treatment to make the oxidation of TiN heating electrode, obtains very thin TiON heating electrode buffer layer material, and method is simple, completely compatible with semiconductor technology.Adopt the efficiency of heating surface of the phase-changing memory unit that comprises TiON heating buffer layer material of said method making to be significantly improved, operating current and the power consumption of device obviously reduce.
In sum, the present invention has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all can, under spirit of the present invention and category, modify or change above-described embodiment.Therefore, such as in affiliated technical field, have and conventionally know that the knowledgeable, not departing from all equivalence modifications that complete under disclosed spirit and technological thought or changing, must be contained by claim of the present invention.
Claims (5)
1. a preparation method for phase-changing memory unit, is characterized in that: the method comprises the following steps:
1) provide a substrate;
2) on described substrate, form lower electrode layer;
3) on described lower electrode layer, form heating electrode TiN material layer;
4) on described heating electrode material layer, adopt oxygen plasma treatment to form transition zone;
5) on described transition zone, form phase-change material layers;
6) on described phase-change material layers, form adhesion layer;
7) on described adhesion layer, form upper electrode layer;
8) on described lower electrode layer, form extracting electrode layer;
9) continue follow-up common process to form phase-changing memory unit.
2. the preparation method of phase-changing memory unit according to claim 1, is characterized in that: described step 3) in the material of heating electrode material layer be TiN.
3. the preparation method of phase-changing memory unit according to claim 1, is characterized in that: described step 4) in form and adopt capacitance coupling plasma generator when transition zone; Its radio frequency is 60MHz; Oxygen flow is 500-1500SCCM; Bias power is 600-1800W; Cavity air pressure is 100-300mTorr; Cavity temperature is 20 DEG C.
4. the preparation method of phase-changing memory unit according to claim 1, is characterized in that: described step 4) in the oxygen plasma treatment time be 2-30s while forming transition zone.
5. the preparation method of phase-changing memory unit according to claim 1, is characterized in that: described step 4) in form transition region thickness be 0.5-5nm.
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