CN104049410A - Antireflection film for quantum dot enhancement film (QDEF) and preparation method of antireflection film - Google Patents

Antireflection film for quantum dot enhancement film (QDEF) and preparation method of antireflection film Download PDF

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Publication number
CN104049410A
CN104049410A CN 201410267257 CN201410267257A CN104049410A CN 104049410 A CN104049410 A CN 104049410A CN 201410267257 CN201410267257 CN 201410267257 CN 201410267257 A CN201410267257 A CN 201410267257A CN 104049410 A CN104049410 A CN 104049410A
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film
quantum dot
antireflection
qdef
antireflection film
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CN 201410267257
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Chinese (zh)
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李福山
郭太良
吴薇
聂晨
林健
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福州大学
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Abstract

The invention relates to an antireflection film for a quantum dot enhancement film (QDEF) and a preparation method of the antireflection film. The QDEF is provided with a barrier layer, a quantum dot layer, another barrier layer and the antireflection film in sequence from top to bottom, wherein the antireflection film is formed by film coating through the electron beam evaporation method, the magnetron sputtering method and the like. A layer of the antireflection film is added on the in-light surface of the QDEF, thus the optical incident efficiency of the QDEF is improved, optical loss of a liquid crystal display (LCD) caused by the introduction of the QDEF is reduced, and the lumen efficiency is improved.

Description

一种用于量子点增强膜的增透膜及其制备方法 A quantum dot enhancement film for antireflection coating and preparation method

技术领域 FIELD

[0001] 本发明涉及一种用于量子点增强膜的增透膜及其制备方法。 [0001] The present invention relates to a quantum dot enhancement film for antireflection coating and preparation method thereof.

背景技术 Background technique

[0002] 经过半个世纪的发展和研究,液晶显示器(IXD)已经成为主导的平板显示技术。 [0002] After half a century of research and development, a liquid crystal display (IXD) has become the dominant flat panel display technology. 由于LCD本身不发光,所以它们需使用背光源。 Since the LCD itself does not emit light, so they need to use a backlight. 为了拓宽LCD的色域,已经发展了几种新型的背光源技术。 In order to broaden the color gamut of the LCD, we have developed several new backlight technology.

[0003] 冷阴极荧光灯(CCFL)曾经是最普遍的背光源,但是它只可以实现75%NTSC的色域,所以为了得到更宽的色域、更高的亮度和更低的能耗,白色发光二极管(WLED)迅速代替了CCFL的位置,成为主要的背光源。 [0003] The cold cathode fluorescent lamp (CCFL) was the most common backlight, but can only achieve 75% NTSC color gamut, so in order to obtain a wider color gamut, higher luminance and lower power consumption, white a light emitting diode (WLED) instead of CCFL position quickly, as the main backlight. 但是基于WLED的背光源,其亮度和对比度还相对较低。 However, based on the backlight WLED, the brightness and contrast are relatively low. 所以,研究人员致力于发展更新的背光源技术来改善这些问题。 Therefore, researchers committed to the development backlight technology update to improve these problems.

[0004] 近年来,一种使用量子点光学膜实现高色域LCD的量子点增强膜(QDEF)的新型产品被越来越多的关注。 [0004] In recent years, an optical film using a quantum dot LCD to achieve high color gamut quantum dot enhancement film (QDEF) new products have been more and more attention. QDEF是一种添加了两种量子点的光学薄膜,两种量子点可以在蓝光照射下产生红光和绿光,与一部分透过的蓝光混合之后得到白光。 QDEF optical film is an added two kinds of quantum dots, the quantum dots may generate two kinds of red and green light in blue light, the blue light to obtain white after mixing with the permeable portion. 量子点比人类发丝还要小10000倍,其发出的光是在一个特定的波长下产生的。 Quantum dot 10,000 times smaller than a human hair, which emits light is generated at a specific wavelength. 通过控制量子点的光谱输出,QDEF 产品可以使用薄膜上数万亿的量子点来增强色彩和亮度。 By controlling the spectral output of the quantum dot, QDEF product color and brightness can be enhanced using quantum dots trillions the film. 新型QDEF产品利用量子点技术, 能够提供精准的色谱和色纯度,通过很少的背光改造,可以实现在传统的LCD显示器上达到60%到110%NTSC的色域,同时由于量子点高于荧光粉的光转化效率,所以利用QDEF实现的高色域显示器的背光效率也会大幅度提高。 QDEF new products using quantum dots, capable of providing accurate color and chromatographic purity, with little backlight transformation can be achieved to 60% 110% NTSC color gamut in conventional LCD displays, while higher fluorescence due to quantum dot powder light conversion efficiency, it will also greatly improve the utilization efficiency of the backlight high color gamut displays QDEF achieved.

[0005] 由于引入了QDEF层,蓝光通过QDEF层时,会出现一部分的光学损耗,所以在蓝色发光二极管及QDEF之间,即QDEF的入光面镀上增透膜,来减少这部分衰减,以减少器件的光学损耗,提高器件的流明效率。 [0005] Since the introduction of QDEF layer, blue light through QDEF layer, a portion of the optical loss occurs, so that between the blue light emitting diode and QDEF, anti-reflection coating on the surface of the plating QDEF i.e., to reduce the attenuation of this part to reduce the optical loss of the device, improve the luminous efficiency of the device.

发明内容 SUMMARY

[0006] 为了克服现有基于QDEF的背光源存在的光学损耗,本发明提供一种用于量子点增强膜(QDEF)的增透膜的及其制备方法。 [0006] In order to overcome optical loss based on the presence QDEF backlight, the present invention provides a preparation method for a quantum dot film (QDEF) AR coating is enhanced. 在QDEF的入光面上镀上增透膜,有效的减少了由于QDEF的引入导致液晶显示器的光学损耗,提高了透光率和流明效率。 In the light-receiving surface of the antireflection QDEF plated film, effectively reduces the introduction of a liquid crystal display QDEF causes optical loss and improve the light transmittance and luminous efficiency.

[0007] 为实现本发明目的,本发所采用的技术方案是: 一种用于量子点增强膜(QDEF)的增透膜,所述的量子点增强膜设有一层增透膜,该增透膜位于QDEF的入光面上,厚度为50nm-200nm。 [0007] To achieve the object of the present invention, the technical solutions used in the present invention is: A quantum dot for enhancement film (QDEF) anti-reflection coating, the quantum dot enhancement film provided with a layer antireflection film by which QDEF permeable membrane positioned into the light-receiving surface, a thickness of 50nm-200nm.

[0008] 该增透膜可以是单层也可以是多层。 [0008] The antireflection film may be a single layer or a multilayer.

[0009] 该增透膜可以是由不同厚度和不同材料层叠构成。 [0009] The antireflection film may be composed of different thickness and different materials are stacked.

[0010] 该增透膜的材料包括氟化镁或二氧化硅。 [0010] The antireflective film of material comprises magnesium fluoride or silica. 该增透膜的厚度为光源在增透膜介质中波长的1/4。 The antireflection film has a thickness of 1/4 of the wavelength light in the AR coating medium.

[0011] 该增透膜的制备方法包括电子束蒸发或磁控溅射的方法。 [0011] The antireflection film production method includes a method of electron beam evaporation or magnetron sputtering.

[0012] 本发明的有益效果是: 本发明提供的一种用于量子点增强膜(QDEF)的增透膜,由于在其入光面镀有一定厚度的增透膜,可减少反射光,从而减少光的损耗,可有效增加透光率;因而采用该QDEF可减少由于QDEF的引入导致液晶显示器的光学损耗,提高流明效率。 [0012] Advantageous effects of the present invention are: the present invention provides a quantum dot for enhancement film (QDEF) AR coating, since the surface thereof plated with a thickness of the antireflection film can reduce the reflection of light, thereby reducing the loss of light, it can effectively increase the transmittance; thus employed may be reduced due to the introduction of the QDEF QDEF liquid crystal display results in optical loss and improve luminous efficiency.

附图说明 BRIEF DESCRIPTION

[0013] 图1是用于量子点增强膜(QDEF)的增透膜的结构图。 [0013] FIG. 1 is a quantum dot structure enhancement FIG antireflection coating film (QDEF) a.

具体实施方式 detailed description

[0014] 本发明用下列实施例来进一步说明本发明,但本发明的保护范围并不限于下列实施例。 [0014] The present invention is further illustrated by the following examples of the present invention, but the scope of the present invention is not limited to the following examples.

[0015] 实施例1 本发明的一种用于量子点增强膜(QDEF)的增透膜的实施方式如图1所示,其中3和5 为阻挡层,4为量子点层。 Embodiment [0015] Example AR coating for a quantum dot enhancement film (QDEF) 1 of the present invention shown in Figure 1, 3 and 5 wherein a barrier layer, a quantum dot layer 4. 该量子点增强膜6包括增透膜1。 The quantum dot enhancement film 6 comprises an AR coating. 该增透膜1形成于量子点增强膜6的入光面2上。 The antireflection film 1 is formed enhancement film 6 in the quantum dots on the surface 2.

[0016] 在本实施例中,增透膜1为单层,选择氟化镁为增透膜1的材料,其折射率为1. 38, 通过计算,确定该增透膜1的厚度为86. 05nm。 [0016] In the present embodiment, a single layer AR coating 1, as selected by magnesium fluoride film 1 through a refractive index of 1.38, by calculation, determining the thickness of the antireflection film 1 86 . 05nm. 将量子点增强膜6放入腔体中,抽真空,当真空度达到3*1(Γ3时,采用电子束蒸发的方式将氟化镁薄膜蒸镀在在该量子点增强膜1的入光面2上。通过测试比较,与现有技术相比,当入射光为475nm的蓝光时,图1的具有增透膜1的QDEF的透光率明显提高,流明效率明显增加。透光率增加了约1. 39Γ1. 9%,流明效率增加了〇. 5°/Γ〇. 7%。 The quantum dot enhancement film 6 into the cavity, vacuum, when the degree of vacuum reached 3 * 1 (Γ3 when, by way of electron beam evaporation deposition film of magnesium fluoride in the quantum dot light enhancement film 1 into 2 on the surface. by comparing the test, compared to the prior art, when the incident light is 475nm blue light, with the AR coating of FIG. 1 1 QDEF transmittance significantly improved luminous efficiency was significantly increased. transmittance increased about 1. 39Γ1. 9%, the luminous efficiency increases billion. 5 ° / Γ〇 7%.

[0017] 试验表明,在现有技术的QDEF入光面上镀上增透膜,可使得该量子点增强膜的透光率大幅度提高,从而使得其流明效率增加。 [0017] Tests showed that in the prior art QDEF light incident on the surface of the antireflection coating film, so that the quantum dot can be enhanced greatly improved light transmittance of the film, so that the increase luminous efficiency.

[0018] 以上所述仅为本发明的较佳实施例,凡依本发明申请专利范围所做的均等变化与修饰,皆应属本发明的涵盖范围。 [0018] The foregoing is only preferred embodiments of the present invention, where the application under this invention, modifications and alterations made to the scope of the patent, also belong to the scope of the present invention.

Claims (6)

  1. 1. 一种用于量子点增强膜的增透膜,其特征在于:所述的量子点增强膜设有增透膜, 该增透膜位于量子点增强膜的入光面上,厚度为50nm-200nm。 A quantum dots for enhancing the antireflection coating film, wherein: said quantum dot enhancement film provided with an antireflection film, the antireflection film is positioned to enhance the quantum dot light incident side of the film, with a thickness of 50nm -200nm.
  2. 2. 根据权利要求1所述的用于量子点增强膜的增透膜,其特征在于:所述的增透膜为单层或多层。 The quantum dot according to claim 1 enhancement film antireflection coatings, characterized in that: said antireflection film is a monolayer or multilayer.
  3. 3. 根据权利要求1所述的用于量子点增强膜的增透膜,其特征在于:所述的增透膜由不同材料层叠构成。 3. The quantum dot according to claim 1 reinforced antireflection coating film, wherein: said antireflective film is made of different materials are stacked.
  4. 4. 根据权利要求3所述的用于量子点增强膜的增透膜,其特征在于:所述的增透膜其材料包括氟化镁或二氧化硅。 The quantum dot according to claim 3 enhancement film antireflection coatings, characterized in that: said antireflection coating material which comprises magnesium fluoride or silica.
  5. 5. 根据权利要求1所述的用于量子点增强膜的增透膜,其特征在于:所述的增透膜其厚度为光源在增透膜介质中波长的1/4。 The quantum dot according to claim 1 enhancement film antireflection coatings, characterized in that: said antireflection film having a thickness of the light source wavelength AR coating medium 1/4.
  6. 6. -种制备如权利要求1所述的用于量子点增强膜的增透膜的方法,其特征在于:包括电子束蒸发或磁控溅射的方法。 6. - Preparation of seed as claimed in claim 1, for enhancement of the quantum dot method antireflection coating film, comprising: a method of electron beam evaporation or magnetron sputtering.
CN 201410267257 2014-06-17 2014-06-17 Antireflection film for quantum dot enhancement film (QDEF) and preparation method of antireflection film CN104049410A (en)

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CN105301844A (en) * 2015-12-04 2016-02-03 江苏日久光电股份有限公司 High-penetration optical combined thin film
CN105334666A (en) * 2015-12-04 2016-02-17 江苏日久光电股份有限公司 High-transmittance type optical combined thin film

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Publication number Priority date Publication date Assignee Title
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CN105334666A (en) * 2015-12-04 2016-02-17 江苏日久光电股份有限公司 High-transmittance type optical combined thin film

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