CN104022181B - A kind of preparation method of photodiode - Google Patents
A kind of preparation method of photodiode Download PDFInfo
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- CN104022181B CN104022181B CN201410226092.5A CN201410226092A CN104022181B CN 104022181 B CN104022181 B CN 104022181B CN 201410226092 A CN201410226092 A CN 201410226092A CN 104022181 B CN104022181 B CN 104022181B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 94
- 239000002184 metal Substances 0.000 claims abstract description 94
- 238000000034 method Methods 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 14
- 238000002310 reflectometry Methods 0.000 claims abstract description 14
- 238000005516 engineering process Methods 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 11
- 238000001259 photo etching Methods 0.000 claims abstract description 10
- 238000013021 overheating Methods 0.000 claims abstract description 9
- 238000003776 cleavage reaction Methods 0.000 claims abstract description 6
- 230000007017 scission Effects 0.000 claims abstract description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 24
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- 238000005260 corrosion Methods 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical class [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 4
- 150000002466 imines Chemical class 0.000 claims description 4
- 238000003801 milling Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000004043 responsiveness Effects 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
Abstract
The present invention is applicable to chip manufacturing field, and a kind of preparation method of photodiode is provided, and comprises according to photodiode hierarchical structure and prepares epitaxial wafer; Process described epitaxial wafer and finally obtain p contact metal layer, n contact metal layer, and through Overheating Treatment; After heat treatment, form high reflecting metal layer by photoetching, electron beam evaporation and stripping technology; Obtain photodiode chip through cleavage. In technical solution of the present invention, all make in p contact metal layer and n contact metal layer, and after all heat treatment, then form high reflecting metal layer, the reflectivity of high reflecting metal layer can be brought up to more than 75%, has effectively improved the responsiveness of photodiode.
Description
Technical field
The invention belongs to chip manufacturing field, relate in particular to a kind of preparation method of photodiode.
Background technology
In optic communication, need detector receiving optical signals, the responsiveness that conventionally improves detector improves detectionThe sensitivity of device. In high speed detector design, in order to improve the operating rate of detector, need to improve its bandWide, therefore need to reduce uptake zone thickness, can reduce detector responsivity and reduce uptake zone, as work as InGaAsUptake zone thickness reduction is during to 1um, and responsiveness can be reduced to 0.61A/W (1550nm wavelength), responseThe meeting that reduces of degree reduces detector sensitivity, and because the uptake zone area of high speed detector is less, as25～40Gb/s detector, uptake zone typically has a diameter from 5～20um, and low-response degree can improve device coupling difficulty.Therefore, the responsiveness of raising detector particularly seems and is even more important for high speed detector.
The method that improves detector responsivity mainly contains two kinds: (1) adopts the Bragg reflector of high reflectance(DBR) form absorption again by be reflected back uptake zone by the light of uptake zone, Bragg reflector comprises halfConductor layer DBR and dielectric layer DBR. Semiconductor layer DBR needs half of the multipair high low-refraction of alternating growthConductor material layer, not only growth cost is high, and needs accurately to control each layer thickness. Dielectric layer DBR passes throughThe dielectric layer of the high low-refraction of vacuum coating deposit, as silica, aluminium oxide and silicon etc., but need to removeWhen unwanted part dielectric layer, remove technology difficulty high, and need high-precision filming equipment, costHigher. (2) adopt the alloy-layer with high reflectance. Conventionally adopt the AuZn as Ohmic contact simultaneouslyAlloy, and alloy-layer reflectivity in rapid thermal treatment process can reduce greatly, as the reflection of AnZn alloyRate, only up to 45%, therefore, can not effectively improve the responsiveness of detector.
Summary of the invention
In view of the above problems, the object of the present invention is to provide a kind of preparation method of photodiode, be intended toSolve existing photodiode response degree technical problem not rapidly.
To achieve these goals, the preparation method of described photodiode comprises the steps:
Prepare epitaxial wafer according to photodiode hierarchical structure;
Process described epitaxial wafer and finally obtain p contact metal layer, n contact metal layer, and through Overheating Treatment;
After heat treatment, form high reflecting metal layer by photoetching, electron beam evaporation and stripping technology;
Obtain photodiode chip through cleavage.
The invention has the beneficial effects as follows: in prior art, be generally having made p contact metal layer, n connectsAfter touching metal level and reflective metal layer, heat-treat again, because reflective metal layer is after Overheating Treatment,Easily cause each layer component diffusion in reflective metal layer, and cause reflectivity to reduce, do not have effective reflectionEffect, such as adopting AuZn reflective metal layer, AuZn reflective metals after heat treatment forms AuZn alloy,Its high reflectance is only 45%, therefore can not effectively submit the responsiveness of photodiode to; And in the present inventionIn, in p contact metal layer with n contact metal layer all completes and after Overheating Treatment, then make highReflective metal layer, the each layer component of high reflecting metal layer can not spread like this, and high reflecting metal layer is hadHigh reflectivity, can reach more than 75% conventionally, can effectively improve like this responsiveness of photodiode.
Brief description of the drawings
Fig. 1 is the flow chart of the preparation method of the photodiode that provides of first embodiment of the invention;
Fig. 2 is the flow chart of the preparation method of the PIN photodiode that provides of second embodiment of the invention;
Fig. 3 is a kind of structure chart of the PIN photodiode that provides of second embodiment of the invention;
Fig. 4 is the another kind of structure chart of the PIN photodiode that provides of second embodiment of the invention;
Fig. 5 is the flow chart of the preparation method of the avalanche photodide that provides of third embodiment of the invention;
Fig. 6 is the structure chart of the avalanche photodide that provides of third embodiment of the invention.
Detailed description of the invention
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with accompanying drawing and realityExecute example, the present invention is further elaborated. Only should be appreciated that specific embodiment described hereinOnly, in order to explain the present invention, be not intended to limit the present invention.
For technical solutions according to the invention are described, describe below by specific embodiment.
Embodiment mono-:
Fig. 1 shows the flow process of the preparation method of the photodiode that the embodiment of the present invention provides, for the ease ofIllustrate and only show the part relevant to the embodiment of the present invention.
The preparation method of the photodiode that the present embodiment provides comprises the steps:
Step S101, prepare epitaxial wafer according to photodiode hierarchical structure.
May there is various level epitaxial slice structure for different photodiodes, generally adopt metal to haveChemical machine CVD method grows successively each layer on InP substrate, finally obtains epitaxial wafer.
Step S102, process described epitaxial wafer and finally obtain p contact metal layer, n contact metal layer, and warpOverheating Treatment.
May be different for its concrete manufacture craft of different photodiodes, but all comprise by makingP contact metal layer, n contact metal layer and heat treatment step, also have corrosion to make table top step etc. in addition,This step is not specifically limited procedure of processing, in a word as long as process epitaxial wafer by processing, obtains p contactMetal level, n contact metal layer, and p contact metal layer, n contact metal layer are heat-treated,Can be after p contact metal layer, to heat-treat obtaining, obtain after n contact metal layer again through heat onceProcessing, can be also to obtain after p contact metal layer, n contact metal layer, to p contact metal layer, nContact metal layer heat treatment simultaneously.
After step S103, heat treatment, form high reflecting metal layer by photoetching, electron beam evaporation and stripping technology;
Step S104, process cleavage obtain photodiode chip.
In the present embodiment, obtain p contact metal layer, n contact metal layer and after Overheating Treatment in making,Make high reflecting metal layer, high reflecting metal layer is without heat-treating again, like this in high reflecting metal layerJust can not there are diffusion phenomena in each layer component, be conducive to improve the responsiveness of photodiode. As for 1.2The InGaAs absorbed layer of μ m thickness, detector responsivity can be brought up to 0.94A/W from 0.71A/W.Therefore, for > 25Gb/s high speed detector and 10Gb/s avalanche photodide, responsiveness improved heavy especiallyWant.
Embodiment bis-:
Fig. 2 shows the flow process of the preparation method of the photodiode that the embodiment of the present invention provides, for the ease ofIllustrate and only show the part relevant to the embodiment of the present invention.
The present embodiment specifically describes the preparation method of photodiode as an example of PIN photodiode example. As Fig. 2Shown in, comprise the steps:
Step S201, prepare epitaxial wafer according to PIN photodiode hierarchical structure.
PIN photodiode is to be made and obtained by epitaxial wafer corrosion, and the epitaxial wafer of PIN photodiode comprisesBe positioned at the N-shaped InP substrate of bottom, by mocvd method on InP substrate successivelyGrow each layer, comprise N-shaped InP cushion, I type InGaAs light absorbing zone, p-type InP Window layer, pType InGaAs contact layer. As a kind of embodiment, the doping content of described N-shaped InP cushion is 0.5～1e18cm-3, thickness is 0.2～1.0 μ m; The doping content of described I type InGaAs light absorbing zone lower than5e15cm-3, thickness is 0.8～1.5 μ m; The doping content of described p-type InP Window layer is 1～3e18cm-3、Thickness is 1.0 μ m; The doping content of described p-type InGaAs contact layer > 1e19cm-3, thickness is 0.05～0.15μm。
The present embodiment finally need to be made the PIN photodiode that obtains as shown in Figure 3 and Figure 4, comprises InPSubstrate 10, on described InP substrate stacking N-shaped InP cushion 20, I type InGaAs light absorbing zone 30,P-type InP Window layer 40, p-type InGaAs contact layer 52, described p-type InGaAs contact layer 52 is provided with pContact metal layer 60, and form Ohmic contact, in p contact metal layer 60 and p-type InP Window layer 40On there is high reflecting metal layer 65. In described N-shaped cushion 20 contacts, be also provided with n contact metal layer 80,Described N-shaped InP substrate bottom surface is also provided with anti-reflection dielectric layer 100.
Step S202, form annular p-type InGaAs contact layer by photoetching and etching process;
Step S203, employing electron beam evaporation and stripping technology form p and connect on p-type InGaAs contact layerTouch metal level, then heat-treat 1～3 minute.
The contact-making surface of p contact metal layer and p-type InGaAs contact layer is annular, and p contact metal layer need to be drawnGo out subregion for bonding wire, p contact metal layer is Ti, Pt, Au metal level, the thickness of Ti, Pt, AuBe followed successively by
Preferably, in this step, heat treatment temperature is 410 DEG C.
Step S204, employing bromine series corrosive liquid and selective corrosion corrosion are to N-shaped InP cushion, shapeBecome table top;
Step S205, adopt electron beam evaporation process and stripping technology at the upper surface of N-shaped InP cushion orPerson's lower surface forms n contact metal layer, and through Overheating Treatment 1～3 minute, obtains wafer.
In this step, heat treatment temperature is 300～360 DEG C.
Step S206, by wafer grinding to 150～200um polishing, in wafer lower surface deposit silicon nitrideAnti-reflection dielectric layer. Preferably, described anti-reflection thickness of dielectric layers is
Step S207, by photoetching, electron beam evaporation and stripping technology, be formed on high reflection on wafer topMetal level.
Described high reflecting metal layer is Cr, Au metal level, and wherein the thickness of Cr isAuThickness beUnder 1550nm incident light irradiates, reflectivity R is 78%, or described inHigh reflecting metal layer is Pt, Au metal level, and wherein the thickness of Pt isThe thickness of Au isUnder 1550nm incident light irradiates, reflectivity R is 78%, or described high reflection goldBelonging to layer is Cr, Pt, Au metal level, and wherein the thickness of Cr isThe thickness of Pt is The thickness of Au isUnder 1550nm incident light irradiates, reflectivity R is 75%.Be preferably Cr, Au metal level.
Step S208, wafer obtain PIN photodiode chip after cleavage.
Preferably, after described step S204, also comprise:
Cover poly-milling imines coating 71 at table top sidewall and p-type InP Window layer upper surface, and through 100～350 DEG C of Passivation Treatment.
Fig. 4, compared to Fig. 3, has increased poly-milling imines coating 71, in this optimal way, and poly-milling imines coatingCan protect PN junction not to be subject to external interference, can reduce diode leakage current.
Embodiment tri-:
Fig. 5 shows the flow process of the preparation method of the photodiode that the embodiment of the present invention provides, for the ease ofIllustrate and only show the part relevant to the embodiment of the present invention.
The present embodiment specifically describes the preparation method of photodiode as an example of avalanche photodide example. As Fig. 5Shown in, comprise the steps:
Step S501, prepare epitaxial wafer according to avalanche photodide hierarchical structure.
Avalanche photodide is to be made and obtained by epitaxial wafer corrosion, and the epitaxial wafer of avalanche photodide comprisesBe positioned at the N-shaped InP substrate of bottom, by mocvd method on InP substrate successivelyGrow each layer, comprise N-shaped InP cushion, I type InGaAs light absorbing zone, N-shaped InP electric field controlsLayer, N-shaped InP Window layer, p-type InGaAs contact layer. As a kind of embodiment, N-shaped InP bufferingThe doping content of layer is 0.5～1e18cm-3, thickness is 0.2～1.0 μ m; Described I type InGaAs light absorptionThe doping content of layer is lower than 5e15cm-3, thickness is 0.8～1.5 μ m; Described N-shaped InP electric field controls layerDoping content is 0.1～1e18cm-3, thickness is 0.05～0.5 μ m; The doping of described N-shaped InP Window layerConcentration is lower than 5e15cm-3, thickness is 3.5 μ m; The doping content of described p-type InGaAs contact layer is lowIn 5e15cm-3, thickness is 0.05～0.15 μ m.
The present embodiment finally need to be made the avalanche photodide that obtains as shown in Figure 6, comprises InP substrate10, stacking N-shaped InP cushion 20, I type InGaAs light absorbing zone 30, N-shaped on described InP substrateInP electric field controls layer 35, N-shaped InP Window layer 42, p-type InGaAs contact layer 52, described at N-shaped InPThere is p-type semiconductor regions 45 in Window layer 42. P-type InGaAs contact layer 52 is provided with p contacting metalLayer 60, and form Ohmic contact, on p contact metal layer 60 and p-type semiconductor regions 45, exist highReflective metal layer 65. Exist the degree of depth at least to arrive on N-shaped InP cushion 20 in N-shaped InP Window layer 42The raceway groove 75 on surface, described raceway groove 75 is interior there is n contact metal layer 80, and n contact metal layer 80Contact with N-shaped InP cushion 20. On N-shaped InP Window layer 42 surfaces and raceway groove 75 sidewalls, cover nitrogenize, there is anti-reflection dielectric layer 100 at InP substrate 10 lower surfaces in silicon passivation layer 70.
Step S502, form annular p-type InGaAs contact layer by photoetching and etching process;
Step S503, employing Zn diffusion technique form p-type semiconductor regions in N-shaped InP Window layer.Diffusion depth has determined the multiplication region thickness of avalanche photodide.
Step S504, employing bromine series corrosive liquid and selective corrosion corrosion are to N-shaped InP cushion, shapeBecome table top;
Step S505, by photoetching and dry etching, and adopt electron beam evaporation and stripping technology to form n to connectTouch metal level and form p contact metal layer on p-type InGaAs contact layer, obtaining wafer, described nContact metal layer contacts with N-shaped InP cushion.
The contact-making surface of p contact metal layer and p-type InGaAs contact layer is annular, and p contact metal layer need to be drawnGo out subregion for bonding wire, p contact metal layer is Ti, Pt, Au metal level, the thickness of Ti, Pt, AuBe followed successively by
Step S506, by wafer through Overheating Treatment.
In this step, described heat treatment is divided into two stages, is followed successively by 410 DEG C 1～3 point of heat treatmentClock, heat treatment 1～3 minute at 300～360 DEG C.
Step S507, by wafer grinding to 150～200um polishing, in wafer lower surface deposit silicon nitrideAnti-reflection dielectric layer. Preferably, described anti-reflection thickness of dielectric layers is
Step S508, by photoetching, electron beam evaporation and stripping technology, be formed on high reflection on wafer topMetal level.
Described high reflecting metal layer is Cr, Au metal level, and wherein the thickness of Cr isAuThickness beUnder 1550nm incident light irradiates, reflectivity R is 78%, or described inHigh reflecting metal layer is Pt, Au metal level, and wherein the thickness of Pt isThe thickness of Au isUnder 1550nm incident light irradiates, reflectivity R is 78%, or described high reflection goldBelonging to layer is Cr, Pt, Au metal level, and wherein the thickness of Cr isThe thickness of Pt is The thickness of Au isUnder 1550nm incident light irradiates, reflectivity R is 75%.Be preferably Cr, Au metal level.
Step S509, wafer obtain avalanche photodide chip after cleavage.
Preferably, after described step S504, also comprise:
At table top sidewall and N-shaped InP Window layer surface deposition silicon nitride passivation 70. In this optimal way,Silicon nitride passivation 70 can protect PN junction not to be subject to external interference, can reduce diode leakage current.
To sum up, in above-mentioned several embodiment, the inventive method, in photodiode is made, has been chosen at pContact metal layer and n contact metal layer have all been made, and after all heat treatment, then form highReflective metal layer, the reflectivity of high reflecting metal layer can be brought up to more than 75%, has effectively improved photoelectricity twoThe responsiveness of utmost point pipe.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, not all at thisAny amendment of doing within bright spirit and principle, be equal to and replace and improvement etc., all should be included in the present inventionProtection domain within.
Claims (4)
1. a preparation method for photodiode, is characterized in that, described method comprises:
Prepare epitaxial wafer according to photodiode hierarchical structure;
Process described epitaxial wafer and finally obtain p contact metal layer, n contact metal layer, and through Overheating Treatment;
After heat treatment, form high reflecting metal layer by photoetching, electron beam evaporation and stripping technology;
Obtain photodiode chip through cleavage;
Described photodiode is PIN photodiode, and described epitaxial wafer is followed successively by N-shaped from bottom to top layerInP substrate, N-shaped InP cushion, I type InGaAs light absorbing zone, p-type InP Window layer, p-type InGaAsContact layer, the described epitaxial wafer of described processing finally obtains p contact metal layer, n contact metal layer, and processHeat treatment step, specifically comprises:
Form annular p-type InGaAs contact layer by photoetching and etching process;
Adopt electron beam evaporation and stripping technology to form p contact metal layer on p-type InGaAs contact layer,Then heat-treat 1～3 minute;
Adopt bromine series corrosive liquid and selective corrosion corrosion to N-shaped InP cushion, form table top;
Adopt electron beam evaporation process and stripping technology upper surface or the lower surface shape at N-shaped InP cushionBecome n contact metal layer, and through Overheating Treatment 1～3 minute, obtain wafer;
By wafer grinding to 150～200um polishing, at the anti-reflection dielectric layer of wafer lower surface deposit silicon nitride.
2. method as claimed in claim 1, is characterized in that, is forming after p contact metal layer described heatThe treatment temperature of processing is 410 DEG C, is forming after n contact metal layer, and described heat treated treatment temperature is300～360℃。
3. method as claimed in claim 2, is characterized in that, described employing bromine series corrosive liquid and selectiveCorrosive liquid erodes to N-shaped InP cushion, after forming table top step, also comprises the steps:
Cover poly-milling imines coating at table top sidewall and p-type InP Window layer upper surface, and through 100～350DEG C Passivation Treatment.
4. method as described in claim 1-3 any one, is characterized in that, described high reflecting metal layer isCr, Au metal level, wherein the thickness of Cr isThe thickness of Au isAt 1550nmUnder incident light irradiates, reflectivity R is 78%, or described high reflecting metal layer is Pt, Au metal level,Wherein the thickness of Pt isThe thickness of Au isIrradiate at 1550nm incident lightUnder, reflectivity R is 78%, or described high reflecting metal layer is Cr, Pt, Au metal level, whereinThe thickness of Cr isThe thickness of Pt isThe thickness of Au is?Under 1550nm incident light irradiates, reflectivity R is 75%.
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| CN106711274B (en) * | 2016-11-30 | 2017-12-08 | 武汉光迅科技股份有限公司 | A kind of avalanche photodide and its manufacture method |
| CN108807556B (en) | 2018-06-11 | 2021-01-29 | 京东方科技集团股份有限公司 | Optical sensing device, manufacturing method thereof, display device and display equipment |
| CN112071956B (en) * | 2020-09-08 | 2022-08-16 | 山西国惠光电科技有限公司 | Preparation process of novel InGaAs infrared focal plane detector |
| CN112687751B (en) * | 2020-12-29 | 2022-06-21 | 全磊光电股份有限公司 | High-speed photoelectric detector structure and manufacturing method thereof |
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| CN101183702A (en) * | 2006-11-17 | 2008-05-21 | 夏普株式会社 | Semiconductor light-emitting device and method of manufacturing the same |
| CN102315345A (en) * | 2010-07-05 | 2012-01-11 | 广镓光电股份有限公司 | Luminous element |
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| US7795064B2 (en) * | 2007-11-14 | 2010-09-14 | Jds Uniphase Corporation | Front-illuminated avalanche photodiode |
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| CN101183702A (en) * | 2006-11-17 | 2008-05-21 | 夏普株式会社 | Semiconductor light-emitting device and method of manufacturing the same |
| CN102315345A (en) * | 2010-07-05 | 2012-01-11 | 广镓光电股份有限公司 | Luminous element |
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