CN103943510B - A kind of preparation method of the epitaxial graphene back-gated transistor of N doping SiC substrate - Google Patents
A kind of preparation method of the epitaxial graphene back-gated transistor of N doping SiC substrate Download PDFInfo
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- CN103943510B CN103943510B CN201410156026.5A CN201410156026A CN103943510B CN 103943510 B CN103943510 B CN 103943510B CN 201410156026 A CN201410156026 A CN 201410156026A CN 103943510 B CN103943510 B CN 103943510B
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 27
- 238000002347 injection Methods 0.000 claims abstract description 7
- 239000007924 injection Substances 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 230000006698 induction Effects 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
- 230000005669 field effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 graphite Alkene Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Physical Vapour Deposition (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention discloses the preparation method of the epitaxial graphene back-gated transistor of a kind of N doping SiC substrate, the SiC substrate of even uniform is doped by the Nitrogen ion produced with semiconductor ion implanter, is that the Nitrogen ion of 500kev ~ 1000kev is as grid at the Nitrogen ion that top half injection parameter is 30kev ~ 150kev of SiC substrate as dielectric layer, the latter half injection parameter；By the SiC substrate extending and growing graphene after injecting nitrogen ion, form graphene channel layers；The present invention directly utilizes SiC substrate itself to prepare transistor, need not deposit grid and dielectric layer, simple to operate, it is to avoid the secondary pollution in the course of processing；The Graphene electrology characteristic that epitaxial growth goes out is good, has higher electron mobility.
Description
Technical field
The present invention relates to field-effect transistor technical field, particularly to a kind of graphene field effect transistor and preparation thereof
Method.
Background technology
Graphene has various excellent performance, and specific surface area reaches 2630, high carrier mobility is 200000, it is 100 times of silicon, resistivity is minimum is about 10-6 Ω cm, lower than copper and Yin Geng, high heat conductance is 5000 W, it is 10 times of copper.Graphene is used for the preparation of transistor so that transistor can at room temperature work.Commonly use
The method using Graphene to prepare back-gated transistor is: first at Si base table fever sensation of the face oxygen SiO2As dielectric layer, mask plate is carried out
Photoetching, after development, etches SiO by reactive ion etching (RIE) technology2, forming groove, groove width is 3 ~ 8 μm, then will
The Graphene of preparation is transferred on substrate；At Graphene/SiO2/ Si surface sputtering TiW/Au is as electrode；Lacking of the method
Point is complex process, and Graphene is easily destroyed in transfer process and pollutes.
Summary of the invention
Prepare the weak point of back-gated transistor method for conventional Graphene, propose outside a kind of N doping SiC substrate
Prolonging the preparation method of Graphene back-gated transistor, be avoided that Graphene pollution in transfer process, technique is simple.
The technical solution used in the present invention is according to the following steps:
(1) select the SiC substrate of 1 μ m-thick, it is cleaned；
(2) use hydrogen etching by the Impurity removal of SiC substrate surface, etch with radio frequency induction heating furnace, etch power
It is 400 W, is passed through hydrogen, it is thus achieved that the SiC substrate of even uniform；
(3) the SiC substrate of even uniform is doped, at SiC base by the Nitrogen ion produced with semiconductor ion implanter
The Nitrogen ion that top half injection parameter is 30kev ~ 150kev at the end as dielectric layer, the latter half injection parameter is
The Nitrogen ion of 500kev ~ 1000kev is as grid；
(4) by the SiC substrate extending and growing graphene after injecting nitrogen ion, graphene channel layers is formed；
(5) in the both sides of graphene channel layers sputtering source electrode and drain electrode, N doping SiC substrate epitaxial graphene backgate is formed
Transistor.
The invention have the advantages that:
1, in the present invention, the grid of transistor is the SiC base part being filled with heavy dose of Nitrogen ion, and dielectric layer is for injecting
The SiC base part of low dose of Nitrogen ion, so there is no need to deposit grid and dielectric layer on SiC, directly utilizes SiC base
Copy for the record or for reproduction body prepares transistor, compared with the preparation of traditional grapheme transistor, need not deposit grid and dielectric layer, operation letter
Single, it is to avoid the secondary pollution in the course of processing.
2, the present invention utilize SiC substrate can the feature of extending and growing graphene, utilize the epitaxially grown Graphene of SiC straight
Spreading goes out graphene-channel, as the raceway groove of transistor, compared with the Graphene of mechanical stripping, and the Graphene electricity that epitaxial growth goes out
Characteristic is good, has higher electron mobility.
3, the present invention can expand the operating temperature range of transistor, makes full use of the characteristic of SiC substrate epitaxial graphene, brilliant
The threshold values region of body pipe can be adjusted, and embodies the electric property that Graphene is excellent.
Accompanying drawing explanation
Fig. 1 is N~+ implantation SiC substrate epitaxial graphene back-gated transistor figure；
In figure: 1-injects the SiC base part (grid) of heavy dose of Nitrogen ion；2-injects the SiC base of low dose of Nitrogen ion
Bottom point (dielectric layer)；3-channel layer；4-drains；5-source electrode.
Detailed description of the invention
The grid of transistor, dielectric layer are incorporated into one by the method for injecting nitrogen ion and SiC substrate by the present invention, with
After go out Graphene at SiC Epitaxial growth, plate electrode, form grapheme transistor.Specific as follows: to select the SiC of 1 μ m-thick
Substrate, is carried out with the method for cleaning wafer of standard.
Use hydrogen etching by the Impurity removal of SiC substrate surface.Selecting radio frequency induction heating furnace is etching device, etching
Power is 400 W, and (20 sccm, 30 s), thus obtains the SiC substrate of even uniform to be passed through hydrogen.
SiC is doped by the Nitrogen ion selecting semiconductor ion implanter to produce, at the top half of SiC substrate, note
Enter the Nitrogen ion that parameter is 30kev ~ 150kev, as the dielectric layer 2 of control region, the latter half injection parameter be 500kev ~
The Nitrogen ion of 1000kev so that the latter half of SiC substrate is conducted electricity as grid.See and Fig. 1 injects low dose of Nitrogen ion
SiC base part 1, i.e. grid, and inject the SiC base part 2 of low dose of Nitrogen ion, i.e. dielectric layer.
By the SiC substrate after injecting nitrogen ion, use high temperature pyrolytic cracking (HTP) extending and growing graphene, select the hot stove of radio frequency induction
Heating SiC, heating-up temperature is 1400 DEG C ~ 1600 DEG C, and the time is 10 ~ 20 minutes, and is passed through argon in heating process,
Grow uniform Graphene, form graphene channel layers 3, as the graphene-channel of transistor.The namely stone of transistor
Ink alkene raceway groove 3 directly utilizes SiC substrate extending and growing graphene and obtains, and eliminates trouble and the secondary pollution of transfer Graphene,
And the Graphene electrology characteristic that epitaxial growth goes out is good, electron mobility is high.
At the both sides of graphene channel layers 3 sputtering Ti/Au metal electrode as source electrode 5 and drain electrode 4, define backgate graphite
Alkene field-effect transistor.
Substrate, by injecting the Nitrogen ion of various dose to the different piece of SiC substrate, is doped by the present invention, respectively
Forming conduction region and control region, wherein conduction region is as grid, and control region, as dielectric layer, utilizes SiC itself directly to make
Grapheme transistor, simplifies the program making grapheme transistor, eliminates deposit grid and the step of dielectric layer.By to
Injecting nitrogen ion in SiC substrate, can improve the operating temperature range of transistor, low dose of Nitrogen ion doping SiC base part
I.e. control region, can be injected the dielectric constant of the dosage regulation control region of the Nitrogen ion of SiC, thus reach Graphene by regulation
The effect that the threshold values region of work can be adjusted.
Claims (2)
1. a preparation method for N doping SiC substrate epitaxial graphene back-gated transistor, is characterized in that according to the following steps:
(1) select the SiC substrate of 1 μ m-thick, it is cleaned；
(2) using hydrogen etching by the Impurity removal of SiC substrate surface, etch with radio frequency induction heating furnace, etching power is 400
W, is passed through hydrogen, it is thus achieved that the SiC substrate of even uniform；
(3) the SiC substrate of even uniform is doped, in SiC substrate by the Nitrogen ion produced with semiconductor ion implanter
Top half injection parameter be 30kev ~ 150kev Nitrogen ion as dielectric layer, the latter half injection parameter be 500kev ~
The Nitrogen ion of 1000kev is as grid；
(4) by the SiC substrate extending and growing graphene after injecting nitrogen ion, graphene channel layers is formed；
(5) in the both sides of graphene channel layers sputtering source electrode and drain electrode, N doping SiC substrate epitaxial graphene backgate crystal is formed
Pipe.
Preparation method the most according to claim 1, is characterized in that: in step (4), and the method for extending and growing graphene is:
Heating SiC substrate with the hot stove of radio frequency induction, heating-up temperature is 1400 DEG C ~ 1600 DEG C, and the time is 10 ~ 20 minutes, heated
Journey is passed through argon, grows uniform Graphene, form graphene channel layers.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410156026.5A CN103943510B (en) | 2014-04-18 | 2014-04-18 | A kind of preparation method of the epitaxial graphene back-gated transistor of N doping SiC substrate |
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| CN201410156026.5A CN103943510B (en) | 2014-04-18 | 2014-04-18 | A kind of preparation method of the epitaxial graphene back-gated transistor of N doping SiC substrate |
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| CN108364856A (en) * | 2018-02-27 | 2018-08-03 | 北京大学 | A kind of method that ion implanting prepares nitrogen-doped graphene |
| WO2020179795A1 (en) | 2019-03-05 | 2020-09-10 | 学校法人関西学院 | METHOD AND APPARATUS FOR PRODUCING SiC SUBSTRATE |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102479820A (en) * | 2010-11-30 | 2012-05-30 | 中国科学院微电子研究所 | Field effect transistor and preparation method thereof |
| CN102683217A (en) * | 2012-05-24 | 2012-09-19 | 中国科学院上海微系统与信息技术研究所 | Preparation method of graphite-based double-gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) |
| CN102956694A (en) * | 2011-08-26 | 2013-03-06 | 三星电子株式会社 | Graphene switching device having tunable barrier |
| CN103459137A (en) * | 2011-03-18 | 2013-12-18 | 国际商业机器公司 | Nitride gate dielectric for graphene MOSFET |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20110089404A1 (en) * | 2008-04-24 | 2011-04-21 | President And Fellows Of Harvard College | Microfabrication of Carbon-based Devices Such as Gate-Controlled Graphene Devices |
| US8445893B2 (en) * | 2009-07-21 | 2013-05-21 | Trustees Of Columbia University In The City Of New York | High-performance gate oxides such as for graphene field-effect transistors or carbon nanotubes |
| US9012882B2 (en) * | 2010-02-01 | 2015-04-21 | The Regents Of The University Of California | Graphene nanomesh and method of making the same |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102479820A (en) * | 2010-11-30 | 2012-05-30 | 中国科学院微电子研究所 | Field effect transistor and preparation method thereof |
| CN103459137A (en) * | 2011-03-18 | 2013-12-18 | 国际商业机器公司 | Nitride gate dielectric for graphene MOSFET |
| CN102956694A (en) * | 2011-08-26 | 2013-03-06 | 三星电子株式会社 | Graphene switching device having tunable barrier |
| CN102683217A (en) * | 2012-05-24 | 2012-09-19 | 中国科学院上海微系统与信息技术研究所 | Preparation method of graphite-based double-gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) |
Non-Patent Citations (1)
| Title |
|---|
| 《背栅石墨烯常效应晶体管的制备及性能可靠性研究》;张进;《万方数据知识服务平台》;20131008;全文 * |
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