CN103911583B - AMOLED metal mask plate - Google Patents
AMOLED metal mask plate Download PDFInfo
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- CN103911583B CN103911583B CN201210591703.7A CN201210591703A CN103911583B CN 103911583 B CN103911583 B CN 103911583B CN 201210591703 A CN201210591703 A CN 201210591703A CN 103911583 B CN103911583 B CN 103911583B
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Abstract
The invention discloses at a kind of mask plate for evaporation, it is characterized in that, described mask plate comprises the firstth district and the secondth district, wherein corresponding display area, the firstth district, the corresponding transitional region in the secondth district, and described secondth district is arranged on first left and right sides, district; In described firstth district, be provided with many parallel in left-right direction slits; In described secondth district, be provided with at least one row aperture, between aperture adjacent in described often row aperture, be provided with rib support component.Mask plate for evaporation provided by the invention, the transition of its tension force and the effect of balance better, there is the risk of edge colour mixture when can reduce display area evaporation; Moreover, less region can be taken than prior art, spatially realize frame and narrow; This design can also reduce mask plate manufacture difficulty, reduces mask plate expense.
Description
Technical field
The present invention relates to organic light emitting display field, more specifically, relate to a kind of metal mask plate manufacturing organic light emitting display.
Background technology
AMOLED(ActiveMatrixOrganicLightEmittingDisplay, active array organic light emitting display device) there is the features such as luminous is low in energy consumption, speed of response very fast, contrast gradient is higher, visual angle is wider.
In the process manufacturing AMOLED, need pixel R(red red) G(green is green) B(blue is blue) carry out evaporation respectively, and need in evaporate process to block non-evaporation district with mask plate.In prior art, as Fig. 1, mask plate generally can be provided with the first district 101 of corresponding A MOLED display area and the second district 102 of corresponding A MOLED transitional region on the substrate 100, and the first district 101 is provided with slit, and the slit in the first district 101 is for evaporation.But in the second district 102 near the first district 101, also some slits can be set.
Because, if only arrange slit in the first district 101, and the words of slit are not set in the second district 102, first district 101 is different with the tensile force in the second district 102, two different state characteristic differences are large, and it is more difficult that the tensile force of mask plate realizes continuous transition at the adjacent in two regions, easily causes some tensionings bad at the adjacent in two regions, cause the deformed slits in the first district 101, will cause AMOLED edge of display area place that colour mixture occurs.So, need also arranging some slits near second district 102 part in the first district 101, be used for the tension force of adjacent in balance two regions, realize continuous transition.Further, arrange more slits in the second district 102, this continuous transition is better, and the risk of distortion of the slit at the first edge, district 101 also can be lower.
On the other hand, as Fig. 2, the panel designs of AMOLED can design negative electrode via hole 104 by the nearest Probability Area beyond display area, and OLED negative electrode can complete the electrical connection of cathode portion by via hole 104.It is generally the zone design negative electrode via hole be provided with in the second district 102 beyond slit.But the slit that the second district 102 designs can occupy certain area, and negative electrode via area needs the outside being produced on slit, negative electrode needs to stride across slit areas to be completed to connect and may cause certain voltage loss.And the increase of the quantity along with the slit in the second district 102, also can bring the problem that the frame of AMOLED is broadening.
To sum up, in prior art, both will ensure the continuous transition of the evaporation mask plate of AMOLED at the tension force of second area and first district's adjacent, reduce the voltage loss of negative electrode via hole again, reduce the frame of AMOLED, be have problem to be solved in prior art simultaneously.
Summary of the invention
The present invention proposes a kind of mask structure being can solve above technical problem, and can solve the problem of narrow hem width.
Mask plate for evaporation provided by the invention, is characterized in that, described mask plate comprises the firstth district and the secondth district, wherein corresponding display area, the firstth district, the corresponding transitional region in the secondth district, and described secondth district is arranged on first left and right sides, district;
In described firstth district, be provided with many parallel in left-right direction slits;
In described secondth district, be provided with at least one row aperture, between aperture adjacent in described often row aperture, be provided with rib support component.
Preferably, the columns of described aperture is 1 ~ 10 row.
Preferably, the shape of described aperture is square, rectangle or circle.
Preferably, the wherein said width being in the slit in the firstth district is about 20 to 40 μm.
Preferably, described aperture equals the width of the slit being in the firstth district in the size of left and right directions.
Preferably, described aperture is 40 to 150 μm in the size range of above-below direction.
Preferably, described mask plate is formed by metallic substance.
Preferably, the thickness of described mask plate is about 20 to 40 μm.
Preferably, described multiple row aperture is row-column arrangement, described ranks alignment; Rib support component between described aperture is also in row-column arrangement, and described ranks align.
Preferably, the length of described rib support component is 20 to 30 μm.
Preferably, the length being in a slit in the firstth district described in equals the length summation of the second district one row aperture and the rib support component between aperture.
Preferably, a described row aperture adjacent with the firstth district is 90 to 100 μm to the distance in the firstth district.
Preferably, the distance of adjacent two slits in described firstth district is 90 to 100 μm.
Preferably, the distance between adjacent two row apertures is 90 to 100 μm.
Preferably, on panel, the area coincidence that the region of negative electrode via hole is corresponding with the secondth district is at least partly set.
Mask plate for evaporation provided by the invention, its advantage is:
1, the present invention is used in the mode that the secondth district arranges aperture, from the region transfers without slit or aperture to the little porose area in the secondth district, the slit in the firstth district is transitioned into again from the little porose area in the secondth district, the transition of tension force and the effect of balance better, there is the risk of edge colour mixture when can reduce display area evaporation;
2, compared with prior art, take less region, spatially realize frame and narrow; This design can also reduce mask plate manufacture difficulty, reduces mask plate expense;
3, the region arranging negative electrode via hole is arranged between two adjacent apertures, further spatially realizes frame and narrow;
4, shorten the distance that negative electrode crosses over transitional region, thus reduce the loss value of voltage.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of mask structure being in prior art;
Fig. 2 arranges the structural representation that negative electrode crosses hole site in prior art outside mask plate;
The schematic diagram of the mask structure being that Fig. 3 provides for first embodiment of the invention;
The schematic diagram of the mask structure being that Fig. 4 provides for second embodiment of the invention;
Embodiment
Although be described in more detail the present invention below with reference to accompanying drawings, which show the preferred embodiments of the present invention, should be understood to those skilled in the art can modify on the basis of the description, and still can realize advantageous effects of the present invention.Therefore, following description is appreciated that the expansion of the thinking to those skilled in the art, and not as limitation of the present invention.
In order to clearly describe whole features of practical embodiments.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, a large amount of implementation detail must be made to realize the specific objective of developer, such as, according to regarding system or the restriction about business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work for a person skilled in the art.
In the following passage, more specifically the present invention is described by way of example with reference to accompanying drawing.Make main points of the present invention and feature will be clearer according to following explanation.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the clearly aid illustration embodiment of the present invention.
First embodiment:
The present embodiment provides a kind of mask plate for AMOLED evaporation, please refer to Fig. 3, and Fig. 3 is the schematic diagram of the mask plate of first embodiment of the invention, and described mask plate comprises:
End component 200, and the firstth district be positioned on end component 200 and the secondth district, the display area of described first district corresponding A MOLED, the transitional region of described second district corresponding A MOLED, and described secondth district is arranged on first left and right sides, district;
Be arranged at the multiple left and right parallel slits 201 penetrating component of the described end 200 on end component 200, be arranged in the firstth district, wherein said multiple slit 201 has predetermined length and vertically extends, and described slit 201 is for the colour element of evaporation AMOLED display area;
Be arranged at the four row oblong shaped orifices 202 in the secondth district, rib support component 203 is provided with between aperture adjacent in described aperture 202, aperture 202 and rib support component 203, for balancing the tension force between the firstth district and the secondth district, prevent slit 201 unbalance stress generation deformation from causing, when evaporation AMOLED display area, edge colour mixture occurs.
Wherein, component of the described end 200 is formed by metallic substance, and thickness is about 35 μm, slit 201 and each four row oblong shaped orifices 202 in left and right are for being uniformly distributed, and aperture 202 is in row-column arrangement, and described ranks align, and the rib support component 203 between aperture 202 is also in row-column arrangement, described ranks alignment.
Distance between slit 201 spacing, aperture about 202, aperture 202 are equal with the spacing of slit 201, are about 95 μm, and aperture 202 equals the width of slit 201 in the size of left and right directions, are about 35 μm; Aperture 202 is 95 μm in the size range of above-below direction, and the length of slit 201 equals the summation of the length of a row aperture 202 and the rib support component 203 between aperture 202; The length of wherein said rib support component is 25 μm.Such setting, aperture 202 and slit 201 can be made comparatively balanced dimensionally, and the tension force of generation does not have very large difference.
With in prior art, slit is set in the secondth district and compares, from the slit being transitioned into the secondth district without slit areas, the technical scheme being transitioned into the slit area in the firstth district again from the slit in the secondth district is compared, the present invention is used in the mode that the secondth district arranges aperture, from the region transfers without slit or aperture to the little porose area in the secondth district, be transitioned into the slit in the firstth district again from the little porose area in the secondth district, the transition of tension force and the effect of balance better, there is the risk of edge colour mixture when can reduce display area evaporation;
Moreover, less region can be taken than prior art, spatially realize frame and narrow; This design can also reduce mask plate manufacture difficulty, reduces mask plate expense.
It should be pointed out that the mask structure being shown in the first embodiment is only a kind of citing and non-limiting.Optionally, in the present embodiment, the shape of described aperture 202 can be replaced circle, oval, the shapes such as square; Aperture 202 is at the size range of choices of left and right directions at 20 to 40 μm, and the size range of choices of above-below direction is at 40 to 150 μm;
Optionally, in the present embodiment, the thickness range of choices of mask plate is between 20 to 40 μm;
Optionally, in the present embodiment, the columns of described aperture 202 can be 1 to 10, can according to mask plate size, and the material elementses such as weight implement different schemes;
Optionally, in the present embodiment, slit 201 width range of described display area can be 20 to 40 μm;
Optionally, in the present embodiment, the length optional scope of described rib support component 203 is between 20 to 30 μm;
Optionally, in the present embodiment, the distance between slit 201 spacing, aperture about 202 and the spacing range of choices of aperture 202 and slit 201 are all between 90 to 100 μm.
Second embodiment:
Second embodiment of the invention has done optimization design on the basis of the first embodiment, specifically please refer to Fig. 4, Fig. 4 is the schematic diagram of the mask plate of second embodiment of the invention, and the second embodiment is according to than the preferred part of the first embodiment: the region 304 being provided with negative electrode via hole in the second district 302.
The described at least part of area coincidence corresponding with the second district 302 in region 304 arranging negative electrode via hole, particularly, with rib support component 303 area coincidence, between respective ribs support component about 303 two apertures 302.
With in prior art, the scheme in the region that the region of negative electrode via hole must be arranged at beyond the slit in the secondth district is compared, in the present embodiment, the region arranging negative electrode via hole is arranged between two adjacent apertures, further spatially realize frame to narrow, on the other hand, negative electrode needs to stride across the firstth district and transitional region to be completed to connect and may cause certain voltage loss, the mask structure being that the present embodiment provides shortens the distance that negative electrode crosses over transitional region, thus reduces the loss value of voltage.
Claims (14)
1., for a mask plate for evaporation, it is characterized in that,
Described mask plate comprises the firstth district and the secondth district, wherein corresponding display area, the firstth district, the corresponding transitional region in the secondth district, and described secondth district is arranged on first left and right sides, district;
In described firstth district, be provided with many parallel in left-right direction slits;
In described secondth district, be provided with at least one row aperture, between aperture adjacent in described often row aperture, be provided with rib support component;
The described length being in a slit in the firstth district equals the length summation of the second district one row aperture and the rib support component between aperture.
2. mask plate as claimed in claim 1, is characterized in that, the columns of described aperture is 1 ~ 10 row.
3. mask plate as claimed in claim 1, is characterized in that, the shape of described aperture is square, rectangle or circle.
4. mask plate as claimed in claim 1, it is characterized in that, the wherein said width being in the slit in the firstth district is 20 to 40 μm.
5. mask plate as claimed in claim 4, it is characterized in that, described aperture equals the width of the slit being in the firstth district in the size of left and right directions.
6. mask plate as claimed in claim 1, it is characterized in that, described aperture is 40 to 150 μm in the size range of above-below direction.
7. mask plate as claimed in claim 1, it is characterized in that, described mask plate is formed by metallic substance.
8. mask plate as claimed in claim 7, it is characterized in that, the thickness of described mask plate is 20 to 40 μm.
9. mask plate as claimed in claim 2, it is characterized in that, described multiple row aperture is row-column arrangement, described ranks alignment; Rib support component between described aperture is also in row-column arrangement, and described ranks align.
10. mask plate as claimed in claim 1, it is characterized in that, the length of described rib support component is 20 to 30 μm.
11. mask plates as claimed in claim 1, is characterized in that, a described row aperture adjacent with the firstth district is 90 to 100 μm to the distance in the firstth district.
12. mask plates as claimed in claim 1, is characterized in that, the distance of adjacent two slits in described firstth district is 90 to 100 μm.
13. mask plates as claimed in claim 1, is characterized in that, the distance between adjacent two row apertures is 90 to 100 μm.
14. mask plates as claimed in claim 1, is characterized in that, on panel, arrange the area coincidence that the region of negative electrode via hole is corresponding with the secondth district at least partly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210591703.7A CN103911583B (en) | 2012-12-29 | 2012-12-29 | AMOLED metal mask plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210591703.7A CN103911583B (en) | 2012-12-29 | 2012-12-29 | AMOLED metal mask plate |
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| Publication Number | Publication Date |
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| CN103911583A CN103911583A (en) | 2014-07-09 |
| CN103911583B true CN103911583B (en) | 2016-04-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210591703.7A Active CN103911583B (en) | 2012-12-29 | 2012-12-29 | AMOLED metal mask plate |
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104062842B (en) | 2014-06-30 | 2019-02-15 | 上海天马有机发光显示技术有限公司 | A kind of mask plate and its manufacturing method, process unit |
| CN104393196A (en) * | 2014-10-17 | 2015-03-04 | 上海工程技术大学 | Manufacturing method of high-resolution-ratio organic light-emitting diode display |
| CN104404446B (en) * | 2014-11-18 | 2017-07-04 | 上海工程技术大学 | A kind of ultrahigh resolution evaporation fine metal mask plate and preparation method thereof |
| CN104536258B (en) * | 2014-12-23 | 2019-12-10 | 厦门天马微电子有限公司 | mask plate, exposure device, method for manufacturing photosensitive resin pattern and substrate |
| CN104762590B (en) * | 2015-03-20 | 2017-05-10 | 京东方科技集团股份有限公司 | Vapor-plating masking plate |
| CN105568217B (en) | 2016-01-06 | 2017-12-05 | 京东方科技集团股份有限公司 | Metal mask plate and preparation method thereof |
| CN205576262U (en) * | 2016-05-09 | 2016-09-14 | 鄂尔多斯市源盛光电有限责任公司 | Mask plate |
| CN108666420B (en) * | 2017-03-27 | 2021-01-22 | 京东方科技集团股份有限公司 | Mask plate and manufacturing method thereof |
| CN108179380B (en) * | 2018-03-07 | 2020-05-12 | 京东方科技集团股份有限公司 | Mask plate |
| CN110846614B (en) * | 2019-11-21 | 2022-03-25 | 昆山国显光电有限公司 | Mask and evaporation system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100492715C (en) * | 2002-11-29 | 2009-05-27 | 三星移动显示器株式会社 | Evaporation mask and method for manufacturing organic electroluminescent device thereby |
| CN100523272C (en) * | 2005-01-05 | 2009-08-05 | 三星移动显示器株式会社 | Method of forming shadow mask pattern |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100492715C (en) * | 2002-11-29 | 2009-05-27 | 三星移动显示器株式会社 | Evaporation mask and method for manufacturing organic electroluminescent device thereby |
| CN100523272C (en) * | 2005-01-05 | 2009-08-05 | 三星移动显示器株式会社 | Method of forming shadow mask pattern |
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| CN103911583A (en) | 2014-07-09 |
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