CN103898476A - Thin-film deposition device and thin-film deposition method - Google Patents
Thin-film deposition device and thin-film deposition method Download PDFInfo
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- CN103898476A CN103898476A CN201410161239.7A CN201410161239A CN103898476A CN 103898476 A CN103898476 A CN 103898476A CN 201410161239 A CN201410161239 A CN 201410161239A CN 103898476 A CN103898476 A CN 103898476A
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- interval
- boiler tube
- film deposition
- brilliant boat
- silicon chip
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Abstract
The invention discloses a thin-film deposition device. The thin-film deposition device comprises a wafer vessel, a reacting furnace tube and a gas supplying unit, wherein the wafer vessel comprises a plurality of supporting columns and a plurality of holding parts which are arranged at mutually corresponding positions of the inner peripheral sides of the supporting columns and are used for holding the outer peripheral sides of a plurality of silicon wafers; the arrangement for the holding parts of each supporting column is as follows: the intervals of all the adjacent holding parts are sequentially alternated by a first interval and a second interval, all the adjacent holding parts are spaced in a manner that two adjacent holding parts of each first interval keep the silicon wafers in a manner of being opposite to a surface to be processed, and the first interval is greater than the second interval. The thin-film deposition device has the advantage that the uniformity of film thickness can be effectively improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of film deposition apparatus and membrane deposition method.
Background technology
The silica membrane with good thermal insulation and relatively low specific inductivity has very important effect in electron device.Silica membrane has good isolation characteristic, and and between silicon, there is a good interface, this also makes silica membrane have successful application in super large-scale integration (VLSI, Very Large Scale Integration) system.Chemical vapour deposition (CVD) technology is one of main method of preparing silica membrane, and it utilizes the presoma of gaseous state, generates solid film by the approach of atom, intermolecular chemical reaction.Wherein presoma can be SiH
4and O
2gaseous material, can be also the special gas of TEOS as formed after the liquid source material pyrolytic decomposition of TEOS.Taking TEOS depositing operation as example, it is by Si (OC
2h
5)
4(tetraethoxy) liquid source is heated to after boiling point (169 DEG C) left and right becomes gaseous state and enters boiler tube, in boiler tube, decomposes and produce SiO under hot conditions
2be deposited on silicon chip surface and form film.
Chemical gas phase reaction can general description be:
Si(OC
2H
5)
4→SiO
2＋4C
2H
4＋2H
2O
For deposition of silica film, homogeneity is a very large problem.Homogeneity between homogeneity and sheet in the general burst of homogeneity of film.For homogeneity in sheet, easily there is the problem that causes silicon chip each several part deposition rate speed to differ because of the diffusion inequality of gas.While particularly adopting TEOS technique, due to the special gas molecular weight approximately 208 of TEOS, vapour density is about 7.2 times of air, mean that the special gas itself of TEOS after gasification has poor mobility (oxygen molecule amount 32 compared with oxygen or nitrogen, nitrogen molecule amount 28), the process spreading from surrounding to centre in boiler tube at the special gas of TEOS, in the middle of more difficult arrival silicon chip.Figure 1 shows that the loading schematic diagram of silicon chip while carrying out TEOS technique in prior art.As shown in the figure, brilliant boat 1 carries out depositing operation for being horizontally placed in boiler tube (not shown), its for example quartz is made, and has plectane 12a and the 12b of the plate parallel as two, and be horizontally set in multiple between two blocks of plectanes as 3 pillar 11(schematic diagram only show a pillar).In the relative side of each pillar 11, be provided with multiple otch.These otch, can make the mode of silicon chip extracting keep the outer circumferential side of silicon chip, are set to as 25 with the interval 2d equating along the length direction of each pillar.That is to say, brilliant boat 1 keeps 25 pieces of pending surperficial Wa towards consistent silicon chip W in the mode of plumbness and silicon chip along horizontal.But as shown in Figure 2, because the spacing of silicon chip is less, the special gas mobility of TEOS is poor in addition, the special gas of TEOS is not easy to enter in the middle of silicon chip, causes the Thickness Ratio thin edge of silicon chip middle portion.
Therefore, how impelling reactant gases in depositing operation more easily to arrive in the middle of silicon chip, is the problem that in raising process film sheet, uniformity coefficient is needed solution badly.
Summary of the invention
Main purpose of the present invention is to overcome the defect of prior art, and a kind of film deposition apparatus and membrane deposition method that improves film uniformity is provided.
For reaching above-mentioned purpose, the invention provides a kind of film deposition apparatus, comprise the brilliant boat that can keep multiple silicon chips; Hold the reaction boiler tube of described multiple silicon chips of described brilliant boat and maintenance thereof; And to supply response gas in described reaction boiler tube the pending surface of described multiple silicon chips is carried out to the gas feed unit of thin film deposition processes.Wherein, described brilliant boat comprise multiple pillars and be arranged at the mutual correspondence position in described multiple pillars inner circumferential side, for keeping multiple maintaining parts of outer circumferential side of described multiple silicon chips.The interval that described in each, multiple maintaining parts of pillar are configured to each adjacent described maintaining part keeps described silicon chip with the first interval and the second interval successively alternative arrangement and two adjacent maintaining parts being spaced apart described the first interval in the relative mode in pending surface, and described the first interval is greater than described the second interval.
Preferably, described maintaining part is the otch that is formed at described pillar inner circumferential side, and the outer circumferential side of described silicon chip is held in described otch.
Preferably, described multiple pillars are for being horizontally disposed with, and described multiple maintaining parts are for the described multiple silicon chips of vertical maintenance.
Preferably, described reactant gases is TEOS gas.
Preferably, the technological temperature in described reaction boiler tube is for being more than or equal to 550 DEG C.
The present invention also provides a kind of method of carrying out thin film deposition based on above-mentioned film deposition apparatus, comprises following operation:
Silicon slice loading operation, keep the outer circumferential side of described silicon chip by described multiple maintaining parts, wherein the interval between each adjacent described silicon chip is with the first interval and the second interval successively alternative arrangement and to be spaced apart the pending surface of two adjacent described silicon chips at described the first interval relative, and described the first interval is greater than described the second interval;
Described brilliant boat is loaded into the operation in described reaction boiler tube;
By described gas feed unit, described reactant gases is supplied to give in the film forming operation in the pending surface of described silicon chip in described reaction boiler tube;
Operation by described brilliant boat from taking out of in described reaction boiler tube; And
The operation that described multiple silicon chips are unloaded from described brilliant boat.
Preferably, described maintaining part is the otch that is formed at described pillar inner circumferential side, and the outer circumferential side of described silicon chip is held in described otch.
Preferably, described brilliant boat is loaded into operation in described reaction boiler tube for described brilliant boat along continuous straight runs is loaded in described reaction boiler tube, described multiple maintaining parts are vertical keeps described multiple silicon chips.
Preferably, described reactant gases is TEOS gas.
Preferably, the technological temperature in described reaction boiler tube is for being more than or equal to 550 DEG C.
Beneficial effect of the present invention is in the situation that keeping brilliant boat length and silicon slice loading amount constant, utilize design and the corresponding novel silicon slice loading mode of brilliant boat maintaining part, increase the pitch of fins between the pending surface of silicon chip, improve in prior art the inhomogeneous and defect that causes silicon chip each several part deposition rate speed to differ of process gas diffusion between sheet, improved the film uniformity of silicon chip.
Brief description of the drawings
The loading schematic diagram of silicon chip on brilliant boat when Fig. 1 is the TEOS technique of prior art;
TEOS gas flow schematic diagram when Fig. 2 is prior art TEOS technique;
Fig. 3 is the structural representation of the brilliant boat of one embodiment of the invention film deposition apparatus;
The loading schematic diagram of silicon chip on brilliant boat when Fig. 4 is one embodiment of the invention TEOS technique;
TEOS gas flow schematic diagram when Fig. 5 is one embodiment of the invention TEOS technique.
Embodiment
For making content of the present invention more clear understandable, below in conjunction with Figure of description, content of the present invention is described further.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art is also encompassed in protection scope of the present invention.
The invention relates to deposit film on silicon chip.In following examples, film deposits in horizontal batch processing reaction boiler tube, particularly utilizes the deposition of TEOS as the silica membrane of presoma.But, should notice that thin film deposition of the present invention is not limited to this, can be with other presoma as SiH
4and O
2carry out the deposition of silica membrane, also can, for carrying out other types film, such as the deposition of metallic membrane, organosilicate films, and can in the batch processing reaction boiler tube of other types, carry out, such as vertical heater.It is clear and definite that a large amount of details is described for described embodiment, and can be replaced by and well known to a person skilled in the art.
Film deposition apparatus comprises the brilliant boat that can keep multiple silicon chips, hold the reaction boiler tube of multiple silicon chips of this crystalline substance boat and maintenance thereof, and to supply response gas in reaction boiler tube (being TEOS gas in the present embodiment) the pending surface of multiple silicon chips is carried out to the gas feed unit of thin film deposition processes.
Please refer to Fig. 3, it is depicted as the structural representation of the brilliant boat of film deposition apparatus of one embodiment of the invention.
Brilliant boat 20 has discoid plate 22a, 22b, and is arranged on the first pillar 21a, the second pillar 21b and the 3rd pillar 21c that link both between plate 22a and 22b and with horizontality.The material of plate 22a, 22b and each pillar 21a～21c can be the heat-stable material such as silicon carbide or quartz.Pillar 21a～21c is respectively arranged with maintaining part 23a～23c.In the present embodiment, maintaining part 23a～23c is arranged on a side (inner circumferential side) otch of mutual correspondence position separately that pillar 21a～21c is relative.Otch 23a～23c is can make the mode of silicon chip extracting keep the outer circumferential side of silicon chip.Otch 23a～23c along the length direction setting example of each pillar 21a～21c as 25, therefore can plumbness and Centered mode along laterally keeping 25 pieces of silicon chips.
Compared to prior art, in the present invention, maintaining part 23a～23c becomes regularity distribution on the length direction of pillar 21a～21c.Specifically, on each pillar, taking pillar 21a as example, the interval of each adjacent maintaining part 23a is with the first interval d1 and the second interval d2 alternative arrangement successively.Wherein the first interval d1 is greater than the second interval d2.Further, maintaining part 23a keeps silicon chip as follows: the pending surface that is spaced apart the silicon chip that two adjacent maintaining part 23a of the first interval d1 keep is relative, and it is relative to be spaced apart the back side (i.e. the surface relative with pending surface) of the silicon chip that two adjacent maintaining part 23a of the second interval d2 keep.
Please refer to Fig. 4, it is depicted as the loading schematic diagram of silicon chip on brilliant boat while carrying out TEOS process deposits silica membrane.Silicon chip W embeds in otch with substantially vertical state, is kept by brilliant boat.Adjacent silicon chip W is spaced apart the first interval 3d and the second interval d alternative arrangement successively, and it is relative to be spaced apart the pending surperficial Wa of adjacent silicon chip W of 3d, and the back side of adjacent silicon chip W that is spaced apart d is relative.Be contained in the design of mode by above-mentioned brilliant boat structure and silicon chip, in brilliant boat entire length and silicon slice loading amount constant in the situation that, increase the distance between the pending surperficial Wa of silicon chip, therefore in the time carrying out TEOS technique, the TEOS gas of the high molecular poor fluidity importing more easily arrives silicon chip W middle portion (as shown in Figure 5), make the sedimentation rate trend of each several part in silicon chip consistent, thereby effectively improved the even thickness degree that is formed on the silica membrane on pending surperficial Wa.Although the distance of adjacent silicon chip back side diminishes, easily cause the even thickness degree variation of the silica membrane at the back side, because this silicon dioxide layer belongs to useless extra play at silicon chip back side, so can not exert an influence to Si wafer quality.
Next in connection with above-mentioned film deposition apparatus, membrane deposition method of the present invention is illustrated.
First, carry out the operation of silicon slice loading.Keep the outer circumferential side of silicon chip by maintaining part, multiple silicon chips are written in brilliant boat.Wherein, each silicon chip keeps as follows: the interval of adjacent silicon chip is with the first interval and be less than the second interval alternative arrangement successively at the first interval, and be spaced apart the first interval two adjacent silicon chips pending surface relatively, the back side of two adjacent silicon chips that is spaced apart the second interval is relative.
Afterwards, carry out brilliant boat device to enter the operation of reaction boiler tube inside.In the present embodiment, reaction boiler tube is horizontal furnace tube, and brilliant boat along continuous straight runs is written in reaction boiler tube, and silicon chip is kept with plumbness.
Then, in reaction boiler tube, carry out thin film deposition operation.In thin film deposition operation, tetraethoxy (TEOS) liquid heat is become to gaseous state to boiling point, by gas feed unit, TEOS gas is passed in reaction boiler tube.TEOS gas in reaction boiler tube is at high temperature decomposed into and produces SiO
2be deposited on silicon chip surface and form film.Preferably, the technological temperature in reaction boiler tube is for being more than or equal to 550 DEG C.By the design of brilliant boat structure and silicon slice loading mode, on the pending surface of silicon chip, can form the SiO of even thickness
2film.
Finally, carry out the operation from taking out of and silicon chip after treatment is unloaded from brilliant boat in reaction boiler tube by brilliant boat.
In sum, film deposition apparatus of the present invention and membrane deposition method, in the situation that keeping brilliant boat length and silicon slice loading amount constant, utilize the design of brilliant boat maintaining part and corresponding novel silicon slice loading mode, increase the pitch of fins between the pending surface of silicon chip, make reactant gases during technique more easily enter into the middle part of silicon chip, the middle part that makes the pending surface of silicon chip is no longer to form the thinnest region of thickness, has effectively improved the uniform film thickness degree of silicon chip.
Although the present invention discloses as above with preferred embodiment; so described many embodiment only give an example for convenience of explanation; not in order to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection domain that the present invention advocates should be as the criterion with described in claims.
Claims (10)
1. a film deposition apparatus, is characterized in that, comprising:
Can keep the brilliant boat of multiple silicon chips;
Hold the reaction boiler tube of described multiple silicon chips of described brilliant boat and maintenance thereof; And
To supply response gas in described reaction boiler tube the pending surface of described multiple silicon chips is carried out to the gas feed unit of thin film deposition processes,
Wherein, described brilliant boat comprises:
Multiple pillars;
Be arranged at the mutual correspondence position in described multiple pillars inner circumferential side, for keeping multiple maintaining parts of outer circumferential side of described multiple silicon chips; Described in each, multiple maintaining parts of pillar are configured to: the interval of each adjacent described maintaining part keeps described silicon chip with the first interval and the second interval successively alternative arrangement and two adjacent maintaining parts being spaced apart described the first interval in the relative mode in pending surface, and described the first interval is greater than described the second interval.
2. film deposition apparatus according to claim 1, is characterized in that, described maintaining part is the otch that is formed at described pillar inner circumferential side, and the outer circumferential side of described silicon chip is held in described otch.
3. film deposition apparatus according to claim 1, is characterized in that, described multiple pillars are for being horizontally disposed with, and described multiple maintaining parts are for the described multiple silicon chips of vertical maintenance.
4. film deposition apparatus according to claim 1, is characterized in that, described reactant gases is TEOS gas.
5. film deposition apparatus according to claim 5, is characterized in that, the technological temperature in described reaction boiler tube is for being more than or equal to 550 DEG C.
6. one kind uses the membrane deposition method of film deposition apparatus, described film deposition apparatus comprises: can keep multiple silicon chips brilliant boat, hold described brilliant boat and maintenance thereof described multiple silicon chips reaction boiler tube and to supply response gas in described reaction boiler tube the pending surface of described multiple silicon chips is carried out to the gas feed unit of thin film deposition processes, described brilliant boat comprises multiple pillars and is arranged at multiple maintaining parts of the mutual correspondence position in described multiple pillars inner circumferential side, and described membrane deposition method comprises following operation:
Silicon slice loading operation, keep the outer circumferential side of described silicon chip by described multiple maintaining parts, wherein the interval between each adjacent described silicon chip is with the first interval and the second interval successively alternative arrangement and to be spaced apart the pending surface of two adjacent described silicon chips at described the first interval relative, and described the first interval is greater than described the second interval;
Described brilliant boat is loaded into the operation in described reaction boiler tube;
By described gas feed unit, described reactant gases is supplied to give in the film forming operation in the pending surface of described silicon chip in described reaction boiler tube;
Operation by described brilliant boat from taking out of in described reaction boiler tube; And
The operation that described multiple silicon chips are unloaded from described brilliant boat.
7. membrane deposition method according to claim 6, is characterized in that, described maintaining part is the otch that is formed at described pillar inner circumferential side, and the outer circumferential side of described silicon chip is held in described otch.
8. membrane deposition method according to claim 6, it is characterized in that, described brilliant boat is loaded into operation in described reaction boiler tube for described brilliant boat along continuous straight runs is loaded in described reaction boiler tube, and described multiple maintaining parts are vertical keeps described multiple silicon chips.
9. membrane deposition method according to claim 6, is characterized in that, described reactant gases is TEOS gas.
10. membrane deposition method according to claim 9, is characterized in that, the technological temperature in described reaction boiler tube is for being more than or equal to 550 DEG C.
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|---|---|---|---|
| CN201410161239.7A CN103898476A (en) | 2014-04-22 | 2014-04-22 | Thin-film deposition device and thin-film deposition method |
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|---|---|---|---|
| CN201410161239.7A CN103898476A (en) | 2014-04-22 | 2014-04-22 | Thin-film deposition device and thin-film deposition method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104152866A (en) * | 2014-08-20 | 2014-11-19 | 上海华力微电子有限公司 | Cassette and method for growing oxide layer by utilizing cassette |
| CN105206549A (en) * | 2015-10-22 | 2015-12-30 | 上海华虹宏力半导体制造有限公司 | Method used for improving stability of TEOS thin film on furnace tube machine |
| TWI751806B (en) * | 2020-11-25 | 2022-01-01 | 松勁科技股份有限公司 | Vertical furnace and vertical boat used therefor |
| CN116804272A (en) * | 2023-08-28 | 2023-09-26 | 江苏宏伟石英科技有限公司 | LPCVD baffle type quartz boat and preparation process thereof |
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| US5169684A (en) * | 1989-03-20 | 1992-12-08 | Toyoko Kagaku Co., Ltd. | Wafer supporting jig and a decompressed gas phase growth method using such a jig |
| CN2691050Y (en) * | 2004-03-17 | 2005-04-06 | 立生半导体股份有限公司 | Improved wafer |
| CN101399173A (en) * | 2007-09-26 | 2009-04-01 | 东京毅力科创株式会社 | Heat treatment method and heat treatment apparatus |
| CN103325720A (en) * | 2013-05-31 | 2013-09-25 | 中利腾晖光伏科技有限公司 | Novel railboat for diffusing silicon wafers |
-
2014
- 2014-04-22 CN CN201410161239.7A patent/CN103898476A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5169684A (en) * | 1989-03-20 | 1992-12-08 | Toyoko Kagaku Co., Ltd. | Wafer supporting jig and a decompressed gas phase growth method using such a jig |
| CN2691050Y (en) * | 2004-03-17 | 2005-04-06 | 立生半导体股份有限公司 | Improved wafer |
| CN101399173A (en) * | 2007-09-26 | 2009-04-01 | 东京毅力科创株式会社 | Heat treatment method and heat treatment apparatus |
| CN103325720A (en) * | 2013-05-31 | 2013-09-25 | 中利腾晖光伏科技有限公司 | Novel railboat for diffusing silicon wafers |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104152866A (en) * | 2014-08-20 | 2014-11-19 | 上海华力微电子有限公司 | Cassette and method for growing oxide layer by utilizing cassette |
| CN105206549A (en) * | 2015-10-22 | 2015-12-30 | 上海华虹宏力半导体制造有限公司 | Method used for improving stability of TEOS thin film on furnace tube machine |
| TWI751806B (en) * | 2020-11-25 | 2022-01-01 | 松勁科技股份有限公司 | Vertical furnace and vertical boat used therefor |
| CN116804272A (en) * | 2023-08-28 | 2023-09-26 | 江苏宏伟石英科技有限公司 | LPCVD baffle type quartz boat and preparation process thereof |
| CN116804272B (en) * | 2023-08-28 | 2023-11-28 | 江苏宏伟石英科技有限公司 | Preparation facilities including LPCVD baffle formula quartz boat |
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Application publication date: 20140702 |