CN103864314A - Low-emissivity electrochromic glass - Google Patents

Low-emissivity electrochromic glass Download PDF

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Publication number
CN103864314A
CN103864314A CN201210529581.9A CN201210529581A CN103864314A CN 103864314 A CN103864314 A CN 103864314A CN 201210529581 A CN201210529581 A CN 201210529581A CN 103864314 A CN103864314 A CN 103864314A
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layer
glass
silver
composite conducting
low radiation
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唐晶
崔平生
曾小绵
吕宜超
王小峰
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CSG Holding Co Ltd
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CSG Holding Co Ltd
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Abstract

The invention relates to a low-emissivity electrochromic glass. The low-emissivity electrochromic glass comprises a glass substrate, and a first composite conductive layer, an electrochromic layer, an ionic conduction layer, an ion storage layer and a second composite conductive layer sequentially formed on the glass substrate, and the first composite conductive layer and the second composite conductive layer respectively contain silver. The low-emissivity electrochromic glass has the advantages of realization of good lighting, and good heat insulation performance.

Description

Low radiation electrochomeric glass
Technical field
The present invention relates to a kind of energy-saving glass, especially a kind of low radiation electrochomeric glass.
Background technology
Electrochromism refers to that stable, reversible change phenomenon occurs the optical properties (reflectivity, transmitance, specific absorption etc.) of material under the effect of extra electric field, shows as the reversible change of color and transparency in appearance.Utilize electrochomeric glass prepared by electrochromic this character can and see through photoabsorption and regulate under electric field action, current this glass is widely used in the fields such as automobile rearview mirror, vehicle glass, aircraft side window and building glass.
With the example that is applied as in building glass, electrochomeric glass comprises substrate of glass, and forms successively bottom transparency conducting layer, electrochromic layer, ionic conduction layer, ion storage and top transparent conductive layer in substrate of glass.The material of bottom transparency conducting layer and top transparent conductive layer is generally tin indium oxide (ITO), mixes stannic oxide (FTO) or the Al-Doped ZnO (AZO) of fluorine.In the time of logical forward voltage between the bottom of electrochomeric glass transparency conducting layer and top transparent conductive layer, electrochomeric glass is in " coloured state ", and now it can stop that light and heat amount passes through; In the time of logical reverse voltage between bottom transparency conducting layer and top transparent conductive layer, electrochomeric glass is in " bleaching state ", and light and heat amount can be passed through, but now it does not possess heat insulation performance.
So, when electrochomeric glass is for building/when finishing, have certain daylighting demand if indoor time and do not wish heat energy turnover indoor (for example, on the daytime of torridity summer, indoor have an air conditioner refrigerating; Or on the daytime of Cold Winter, indoorly have heating installation heating), existing electrochomeric glass just cannot meet the demand of use.
Summary of the invention
In view of above-mentioned condition, be necessary to provide a kind of low radiation electrochomeric glass, it still possesses excellent heat-proof quality in " bleaching state ", can not meet thereby solve existing electrochomeric glass the problem that daylighting is high, heat-proof quality is good simultaneously.
The invention provides a kind of low radiation electrochomeric glass, it comprises substrate of glass and is formed at successively the first composite conducting layer, electrochromic layer, ionic conduction layer, ion storage layer and the second composite conducting layer in this substrate of glass, in this first composite conducting layer and this second composite conducting layer, contains respectively silver.
This first composite conducting layer comprises the first buffer layer, the first silver layer and the first protective layer, and this first buffer layer is near this substrate of glass, and this first silver layer is between this first buffer layer and this first protective layer, and this first protective layer is near this this electrochromic layer.
This second composite conducting layer comprises the second buffer layer, the second silver layer and the second protective layer, and this second buffer layer is near this ion storage layer, and this second silver layer is between this second buffer layer and this second protective layer.
The thickness of this first silver layer or this second silver layer is 5 ~ 20nm.
The thickness of this first silver layer or this second silver layer is 10 ~ 15nm.
The material of this first buffer layer or this second buffer layer comprises silicon-dioxide, zinc oxide, Al-Doped ZnO and stannic oxide one or a combination set of thing.
The thickness of this first buffer layer or this second buffer layer is 5 ~ 100nm.
The material of this first protective layer or this second protective layer comprises zinc oxide, Al-Doped ZnO and stannic oxide one or a combination set of thing.
The thickness of this first protective layer or this second protective layer is 5 ~ 100nm.
The present invention also provides a kind of low radiation electrochomeric glass, it comprises substrate of glass and is formed at successively the first composite conducting layer, electrochromic layer, ionic conduction layer, ion storage layer and the second composite conducting layer in this substrate of glass, in this first composite conducting layer or this second composite conducting layer, contains silver layer.
In the first composite conducting layer of above-mentioned low radiation electrochomeric glass or this second composite conducting layer, contain silver layer, because silver layer can stop heat to pass through wherein by extra reflection infrared heat, even make low radiation electrochomeric glass also can stop heat to pass through under " bleaching state ", thereby have advantages of and can meet that daylighting is good and heat-proof quality is good simultaneously.
Accompanying drawing explanation
Fig. 1 is the low radiation electrochomeric glass schematic diagram of the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, low radiation electrochomeric glass of the present invention is described in further detail.
Refer to Fig. 1, the low radiation electrochomeric glass 100 of the embodiment of the present invention comprises substrate of glass 11 and is formed at successively the first composite conducting layer 12, electrochromic layer 13, ionic conduction layer 14, ion storage layer 15 and the second composite conducting layer 16 in substrate of glass 11.In the first composite conducting layer 12 and the second composite conducting layer 16, contain respectively silver layer.
Specifically in the present embodiment, the first composite conducting layer 12 can comprise the first buffer layer 122, the first silver layer 124 and the first protective layer 126.The first buffer layer 122 is near substrate of glass 11, the first silver layers 124 between the first buffer layer 122 and the first protective layer 126, and the first protective layer 126 is near electrochromic layer 13.The second composite conducting layer 16 comprises the second buffer layer 162, the second silver layer 164 and the second protective layer 166.Close ion storage layer 15, the second silver layer 164 of the second 162 layers of bufferings are between the second buffer layer 162 and the second protective layer 166.Wherein, the thickness of the first silver layer 124 or the second silver layer 164 can be 5 ~ 20nm, is preferably 10 ~ 15nm.
The material of the first buffer layer 122 or the second buffer layer 162 can comprise silicon-dioxide (SiO 2), zinc oxide (ZnO), Al-Doped ZnO (AZO) and stannic oxide (SnO 2) one or a combination set of thing.The Main Function of the first buffer layer 122 or the second buffer layer 162 has two, the first, be respectively the first silver layer 124 or the growth of the second silver layer 164 provides good substrate so that had an even surface, the first silver layer 124 or the second silver layer 164 that surface resistance is low; The second, stop that the alkalimetal ion (Na+, Li+) in substrate of glass 11 or ion storage layer 15 diffuses to the first silver layer 124 or the second silver layer 164.The thickness of the first buffer layer 122 or the second buffer layer 162 can be 5 ~ 100 nanometers (nm).
The material of the first protective layer 126 or the second protective layer 166 can comprise zinc oxide (ZnO), Al-Doped ZnO (AZO) and stannic oxide (SnO 2) one or a combination set of thing.Wherein, the first protective layer 126 or the second protective layer 166 are mainly used for preventing that the first silver layer 124 or the second silver layer 164 are oxidized or vulcanize.The thickness of the first protective layer 126 or the second protective layer 166 can be 5 ~ 100 nanometers (nm).
Electrochromic layer 13 can be by Tungsten oxide 99.999 (WO 3), molybdenum oxide (MoO 3), niobium oxides (Nb 2o 3), titanium oxide (TiO 2), cupric oxide (CuO), nickel oxide (Ni 2o 3), chromic oxide (Cr 2o 3), manganese oxide (Mn 2o 3), cobalt oxide (Co 2o 3) or the doping oxide of these materials form.The thickness of electrochromic layer 13 can be 30 ~ 3000nm, is preferably 300 ~ 1000nm.
Ionic conduction layer 14 can be by LiPON (LiPON), iron lithium phosphate, Lithium niobium trioxide (LiNbO 3), cobalt acid lithium, lithium silicate, lithium aluminosilicate, lithium tetraborate, aluminum borate lithium, zirconium silicate lithium, lithium borosilicate or lithium hexafluoro phosphate etc. form containing lithium solid electrolyte.The thickness of ionic conduction layer 14 can be 30 ~ 3000nm.
Ion storage layer 15 can be by Vanadium Pentoxide in FLAKES (V 2o 5), iridium oxide (Ir 2o 3), cerium oxide (CeO 2), titanium oxide-cerium oxide composite oxides (TiO 2-CeO 2), Prussian blue, lithium chromate (Li xcrO 4), cobalt acid lithium (Li xcoO 2), nickel oxide (Ni 2o 3), lithium manganate (Li xmnO 4), lithium nickelate (Li xni yo 3), vanadic acid nickel lithium (Li xni yv zo 4) form.The thickness of ion storage layer 15 can be 30 ~ 3000nm, is preferably 200 ~ 1000nm.
Above-mentioned low radiation electrochomeric glass 100 is when for building/finishing, if pass into forward voltage between the first composite conducting layer 12 and the second composite conducting layer 16, low radiation electrochomeric glass 100 can be in " coloured state ", it is indoor that now it can stop the turnover of light and heat amount, meanwhile the first silver layer 124 in the first composite conducting layer 12 and the second composite conducting layer 16 or the second silver layer 164 can also extra reflection infrared heats, further stop heat turnover indoor.If pass into reverse voltage between the first composite conducting layer 12 and the second composite conducting layer 16, low radiation electrochomeric glass 100 can fade, and in " bleaching state ", now due to the first silver layer 124 in the first composite conducting layer 12 and the second composite conducting layer 16 and the second silver layer 164 thinner, impact on visible light transmissivity is very little, outdoor optical still can be more enter indoor, increase indoor daylighting, meanwhile the first silver layer 124 in the first composite conducting layer 12 and the second composite conducting layer 16 or the second silver layer 164 can also extra reflection infrared heats, stop heat turnover indoor, increase indoor lighting and reduce the requirement that indoor and outdoor heat is transmitted thereby can meet simultaneously.
Be appreciated that, in other embodiments of the invention, in the first composite conducting layer 12 of low radiation electrochomeric glass 100 and the second composite conducting layer 16 if both one of have the silver layer of containing to stop heat turnover " bleaching state " is lower, reach to meet increases indoor lighting and reduces the requirement that indoor and outdoor heat is transmitted simultaneously.
Specific embodiment
Embodiment 1
A kind of low radiation electrochomeric glass, film layer structure is substrate of glass/SiO 2/ Ag/AZO/WO 3/ LiNbO 3/ Ni 2o 3/ AZO/Ag/SnO 2, in each layer of the first composite conducting layer, the first buffer layer SiO 2thickness be that the thickness of 20nm, the first silver layer Ag is that the thickness of 12nm, the first protective layer AZO is 10nm; Electrochromic layer WO 3thickness be 400nm; Ionic conduction layer LiNbO 3thickness be 300nm; Ion storage layer Ni 2o 3thickness be 450nm; In each layer of the second composite conducting layer, the thickness of the second buffer layer AZO is that the thickness of 30nm, the second silver layer Ag is 11nm, the second protective layer Sn 2o 3thickness be 10nm.
The film layer structure of existing common electrochomeric glass is: substrate of glass/ITO/WO 3/ LiNbO 3/ Ni 2o 3/ ITO, wherein ITO layer thickness is 300nm, electrochromic layer WO 3thickness be 400nm; Ionic conduction layer LiNbO 3thickness be 300nm; Ion storage layer Ni 2o 3thickness be 450nm.
Low radiation electrochomeric glass thick 6mm in the present embodiment and the thick common white glass of 6mm are combined into structure for " 6+12A+6 " double glazing " first " sample, double glazing " second " sample that common electrochomeric glass thick 6mm and the thick common white glass of 6mm is combined into same structure, its performance comparison is as shown in the table:
Figure BDA00002561149100061
Can find out from correlation data, visible light transmissivity and the common electrochromism double glazing visible light transmissivity when bleaching state of the low radiation electrochromism double glazing of the present embodiment in the time of bleaching state is very approaching, but the low radiation electrochromism double glazing in the present embodiment in bleaching sun power when state obtain hot factor g value, U value than common electrochromism double glazing g, the U value in the time bleaching state much lower, demonstrate splendid sunshade and heat-proof quality.
Embodiment 2
A kind of low radiation electrochomeric glass, film layer structure is substrate of glass/ZnO/Ag/AZO/WO 3/ LiPON/LiCoO 2/ ZnO/Ag/AZO, in each layer of the first composite conducting layer, the thickness of the first buffer layer ZnO is that the thickness of 30nm, the first silver layer Ag is that the thickness of 10nm, the first protective layer AZO is 20nm; Electrochromic layer WO 3thickness be 300nm; The thickness of ionic conduction layer LiPON is 400nm; Ion storage layer LiCoO 2thickness be 500nm; In each layer of the second composite conducting layer, the thickness of the second buffer layer ZnO is that the thickness of 20nm, the second silver layer Ag is that the thickness of 13nm, the second protective layer AZO is 40nm.
The above, it is only preferred embodiment of the present invention, not the present invention is done to any pro forma restriction, although the present invention discloses as above with preferred embodiment, but not in order to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, when can utilizing the technology contents of above-mentioned announcement to make a little change or being modified to the equivalent embodiment of equivalent variations, in every case be not depart from technical solution of the present invention content, any simple modification of above embodiment being done according to technical spirit of the present invention, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.

Claims (10)

1. one kind low radiation electrochomeric glass, it comprises substrate of glass, it is characterized in that, this low radiation electrochomeric glass also comprises the first composite conducting layer, electrochromic layer, ionic conduction layer, ion storage layer and the second composite conducting layer that are formed at successively in this substrate of glass, in this first composite conducting layer and this second composite conducting layer, contains respectively silver.
2. low radiation electrochomeric glass as claimed in claim 1; it is characterized in that: this first composite conducting layer comprises the first buffer layer, the first silver layer and the first protective layer; this first buffer layer is near this substrate of glass; this first silver layer is between this first buffer layer and this first protective layer, and this first protective layer is near this electrochromic layer.
3. low radiation electrochomeric glass as claimed in claim 2; it is characterized in that: this second composite conducting layer comprises the second buffer layer, the second silver layer and the second protective layer; this second buffer layer is near this ion storage layer, and this second silver layer is between this second buffer layer and this second protective layer.
4. low radiation electrochomeric glass as claimed in claim 3, is characterized in that: the thickness of this first silver layer or this second silver layer is 5 ~ 20nm.
5. low radiation electrochomeric glass as claimed in claim 4, is characterized in that: the thickness of this first silver layer or this second silver layer is 10 ~ 15nm.
6. low radiation electrochomeric glass as claimed in claim 3, is characterized in that: the material of this first buffer layer or this second buffer layer comprises silicon-dioxide, zinc oxide, Al-Doped ZnO and stannic oxide one or a combination set of thing.
7. low radiation electrochomeric glass as claimed in claim 3, is characterized in that: the thickness of this first buffer layer or this second buffer layer is 5 ~ 100nm.
8. low radiation electrochomeric glass as claimed in claim 3, is characterized in that: the material of this first protective layer or this second protective layer comprises zinc oxide, Al-Doped ZnO and stannic oxide one or a combination set of thing.
9. low radiation electrochomeric glass as claimed in claim 3, is characterized in that: the thickness of this first protective layer or this second protective layer is 5 ~ 100nm.
10. one kind low radiation electrochomeric glass, it comprises substrate of glass, it is characterized in that, this low radiation electrochomeric glass also comprises the first composite conducting layer, electrochromic layer, ionic conduction layer, ion storage layer and the second composite conducting layer that are formed at successively in this substrate of glass, in this first composite conducting layer or this second composite conducting layer, contains silver layer.
CN201210529581.9A 2012-12-11 2012-12-11 Low-emissivity electrochromic glass Pending CN103864314A (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104459847A (en) * 2014-10-24 2015-03-25 兰州空间技术物理研究所 Variable-reflectivity flexible thin-film device and manufacturing method thereof
CN106483732A (en) * 2016-12-16 2017-03-08 揭阳市宏光镀膜玻璃有限公司 A kind of high infrared reflection electrochomeric glass and preparation method thereof
CN106502021A (en) * 2016-12-16 2017-03-15 揭阳市宏光镀膜玻璃有限公司 A kind of high infrared reflection full-solid electrochromic glass and preparation method thereof
CN107526226A (en) * 2017-07-25 2017-12-29 江苏繁华玻璃股份有限公司 A kind of combined dimming glass complex-aperture and preparation method thereof
US10303032B2 (en) 2016-05-09 2019-05-28 Sage Electrochromics, Inc. Electrochromic device including a means for preventing ion migration and a process of forming the same
CN110646997A (en) * 2019-09-29 2020-01-03 中北大学 All-inorganic solid electrochromic device and preparation method thereof
CN111176046A (en) * 2018-11-12 2020-05-19 中国科学院上海硅酸盐研究所 Lithium cobaltate film and preparation method and application thereof
CN116080223A (en) * 2023-01-30 2023-05-09 四川君尚亚克力制造有限公司 Electrochromic organic glass and preparation method thereof
EP4111258A4 (en) * 2020-02-25 2024-03-27 Sage Electrochromics, Inc. Approaches to modifying a color of an electrochromic stack in a tinted state

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1230163A (en) * 1996-09-13 1999-09-29 皮尔金顿公共有限公司 Coated glass
CN101833211A (en) * 2010-04-01 2010-09-15 中国科学院宁波材料技术与工程研究所 Intelligent dimming glass

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1230163A (en) * 1996-09-13 1999-09-29 皮尔金顿公共有限公司 Coated glass
CN101833211A (en) * 2010-04-01 2010-09-15 中国科学院宁波材料技术与工程研究所 Intelligent dimming glass

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104459847A (en) * 2014-10-24 2015-03-25 兰州空间技术物理研究所 Variable-reflectivity flexible thin-film device and manufacturing method thereof
US10303032B2 (en) 2016-05-09 2019-05-28 Sage Electrochromics, Inc. Electrochromic device including a means for preventing ion migration and a process of forming the same
CN106483732A (en) * 2016-12-16 2017-03-08 揭阳市宏光镀膜玻璃有限公司 A kind of high infrared reflection electrochomeric glass and preparation method thereof
CN106502021A (en) * 2016-12-16 2017-03-15 揭阳市宏光镀膜玻璃有限公司 A kind of high infrared reflection full-solid electrochromic glass and preparation method thereof
CN107526226A (en) * 2017-07-25 2017-12-29 江苏繁华玻璃股份有限公司 A kind of combined dimming glass complex-aperture and preparation method thereof
CN111176046A (en) * 2018-11-12 2020-05-19 中国科学院上海硅酸盐研究所 Lithium cobaltate film and preparation method and application thereof
CN111176046B (en) * 2018-11-12 2021-04-16 中国科学院上海硅酸盐研究所 Lithium cobaltate film and preparation method and application thereof
CN110646997A (en) * 2019-09-29 2020-01-03 中北大学 All-inorganic solid electrochromic device and preparation method thereof
CN110646997B (en) * 2019-09-29 2022-07-08 中北大学 All-inorganic solid electrochromic device and preparation method thereof
EP4111258A4 (en) * 2020-02-25 2024-03-27 Sage Electrochromics, Inc. Approaches to modifying a color of an electrochromic stack in a tinted state
CN116080223A (en) * 2023-01-30 2023-05-09 四川君尚亚克力制造有限公司 Electrochromic organic glass and preparation method thereof

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