CN103855119A - Semiconductor module, semiconductor device and manufacturing method of semiconductor module - Google Patents

Abstract

The embodiment of the invention provides a semiconductor module, a semiconductor device and a manufacturing method of the semiconductor module. The semiconductor module is provided with a lead frame, a metal wire and a resin packaging body. The lead frame is provided with a first mould pad, a second mould pad and an external terminal, wherein the first mould pad is provided with a power element, and the second mould pad is provided with a control element. The metal wire serves as an electrical connection wire. The resin packaging body enables the external terminal of the lead frame to be protruded and to be packaged. The second mould pad is connected with the lead frame through a retaining lead. Through the semiconductor module, the mould pad provided with the control element can be stably supported on a frame body, and it can be guaranteed that the metal wire will not be disconnected due to vibration in the manufacturing process.

Description

Semiconductor module, semiconductor device and manufacturing method thereof

technical field

The invention relates to the field of semiconductors, in particular to a semiconductor module, a semiconductor device and a manufacturing method thereof. the

Background technique

Power semiconductor components that perform high-current switching and rectification (such as rectification diodes, power MOSFETs, IGBTs (Insulated Gate Bipolar Transistors, etc.)) generate a lot of heat during operation. Therefore, for a semiconductor module in which such a power semiconductor element is embedded in a molding compound, it is desired to have a high heat dissipation capacity. the

Generally, a lead frame (Lead Frame) composed of a heat sink and lead terminals can be used in a semiconductor module, and a power semiconductor chip is mounted on the heat sink. The above structure is sealed with a molding compound made of resin, and the cured molding compound becomes a package. Among them, the lead frame can be formed of copper with high thermal conductivity or the like. In addition, lead terminals constituting a part of the lead frame protrude from the molding material, and electrodes of the power semiconductor chip are connected to respective leads constituting input/output terminals of electrical signals using wires or the like. The power semiconductor chip operates according to the voltage applied to each lead from the outside. the

In practice, the semiconductor module of this structure is used by inserting each lead into a through-hole formed on a printed circuit board and performing soldering. Alternatively, such a method may also be adopted, that is, not only the lead wires protrude from the molding compound, but also the heat dissipation plate is exposed on the back side of the molding compound. In this case, the heat sink itself on the back side may also be used by being soldered to the printed circuit board. the

Currently, as described in Patent Document 1, for example, a semiconductor module sometimes has power elements (power semiconductor chips) and control elements (semiconductor integrated circuits for control) mixedly mounted; and the power elements and control elements are directly connected by gold (Au) wires. the

However, the inventors have found that the mold pads located on the control elements have a large area and are only connected to the inner leads, so they are prone to deformation, and there is concern that the metal wires may be disconnected due to vibration during manufacturing. the

[Patent Document 1]: Japanese Patent No. 2011-054773, Sanken Electric Co., Ltd. the

It should be noted that the above introduction of the technical background or analysis of the technical problems is only for the convenience of a clear and complete description of the technical solution of the present invention and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions or analyzes are known to those skilled in the art just because these solutions or analyzes are described in the background of the present invention. the

Contents of the invention

The invention provides a semiconductor module, a semiconductor device and a manufacturing method thereof, aiming at maintaining a stable support of a mold pad on which a control element is installed on a frame. the

According to an aspect of an embodiment of the present invention, a semiconductor module is provided, including a power element and a control element, wherein the semiconductor module has:

a lead frame having a first die pad mounted with the power element, a second die pad mounted with the control element, and external terminals;

metal wires, which serve as electrical connections; and,

a resin package protruding and encapsulating the external terminals of the lead frame;

Wherein, the second mold pad is connected to the lead frame through holding leads. the

Therefore, by keeping the lead wires connected to the second die pad and the lead frame, the die pad with the control element installed can be kept stably supported on the frame body, ensuring that the vibration during manufacturing will not cause the metal wire to break. the

According to yet another aspect of the embodiments of the present invention, wherein, the lead frame further has a frame pad, and the metal wire is electrically connected to the power element and the control element through the frame pad; and the frame pad portion is connected to the lead frame by holding the lead wires. the

Thus, by setting the frame pad between the control element and the power element, the control element and the power element are no longer directly connected, preventing the heat emitted by the power element from being directly transferred to the control element; The frame connection can keep the frame cushion stablely supported on the frame body, so as to ensure that the vibration during manufacturing will not cause the metal wire to be disconnected. the

According to yet another aspect of the embodiments of the present invention, wherein the holding lead is provided with a cutout portion with a small cross-section in the resin package. the

Thus, by pulling out a part of the holding lead and leaving the remaining part of the holding lead inside the resin package, it is possible to obtain a certain creepage distance without notching on the surface of the resin package. the

According to still another aspect of the embodiment of the present invention, wherein, the cut-off part is a part with a through hole on the holding lead, or a part with a V shape, or a part with a concave shape, or a part with a thickness greater than that of other parts. thin part. the

Thus, by providing the cutting portion inside the resin package, the holding lead wire can be easily cut by stretching when drawing out. the

According to yet another aspect of the embodiments of the present invention, wherein the first mold pad on which the power element is installed is disposed close to the inner surface of the resin package, so that the first mold pad and the second mold pad are not same plane. the

Therefore, the first mold pad installed with the power element is sunk, so that the first mold pad installed with the power element and the second mold pad installed with the control element are not on the same plane, which can further prevent heat transfer. the

According to yet another aspect of the embodiments of the present invention, wherein, the lead frame also has:

an insulating layer, one side of which is adhered to the outer surface of the first mold pad on which the power element is mounted;

The heat dissipation plate has one surface in contact with the other surface of the insulating layer, and the other surface of the heat dissipation plate is exposed from the surface of the semiconductor module. the

Therefore, the heat dissipation performance can be better improved by arranging the heat dissipation plate. the

According to still another aspect of the embodiments of the present invention, in the thickness direction of the semiconductor module, the projected area of the second mold pad does not coincide with the projected area of the heat sink. the

As a result, the mold pad on which the control element is installed avoids the projected area of the heat dissipation plate, which can further prevent heat transfer. the

According to still another aspect of an embodiment of the present invention, a semiconductor device is provided, including a power element and a control element, wherein the semiconductor device has:

a lead frame having a first die pad mounted with the power element, a second die pad mounted with the control element, and external terminals;

metal wires, which serve as electrical connections;

a resin package protruding and encapsulating the external terminals of the lead frame;

Wherein, the second mold pad is connected to one end of a holding lead, and the other end of the holding lead is located inside the resin package. the

Thus, by pulling out a part of the holding lead and leaving the remaining part of the holding lead inside the resin package, it is possible to obtain a certain creepage distance without notching on the surface of the resin package. the

According to yet another aspect of the embodiments of the present invention, wherein the second mold pad includes a frame pad, and the metal wire is electrically connected to the power element and the control element via the frame pad. the

Therefore, by providing the frame pad between the control element and the power element, the control element and the power element are no longer directly connected, preventing the heat emitted by the power element from being directly transferred to the control element. the

According to yet another aspect of the embodiment of the present invention, wherein the holding lead is cut at a cut portion having a small cross section so that the other end is located inside the resin package. the

Thus, by providing the cutting portion inside the resin package, the holding lead wire can be easily cut by stretching when drawing out. the

According to still another aspect of the embodiments of the present invention, a method of manufacturing a semiconductor device is provided, wherein the method of manufacturing includes:

The packaging step is to package the lead frame with the power element and the control element installed therein through the resin package, wherein the lead frame is connected to the second mold pad by holding the lead wire;

In the removing step, the holding lead is cut to remove a part of the holding lead so that the remaining part of the holding lead is located inside the resin package. the

Thus, by pulling out a part of the holding lead and leaving the remaining part of the holding lead inside the resin package, it is possible to obtain a certain creepage distance without notching on the surface of the resin package. the

According to yet another aspect of the embodiments of the present invention, wherein the holding lead has a cutout portion with a small cross-section, and the cutout portion is disposed inside the resin package;

And, the holding lead is broken at the cut portion by stretching in the removing step, so that a remaining portion of the holding lead is located inside the resin package. the

Thus, by providing the cutting portion inside the resin package, the holding lead wire can be easily cut by stretching when drawing out. the

These and other aspects of the invention will become apparent with reference to the following description and drawings. In these descriptions and drawings, specific embodiments of the present invention are specifically disclosed to show some ways of implementing the principles of the present invention, but it should be understood that the scope of the present invention is not limited thereto. On the contrary, the invention includes all changes, modifications and equivalents coming within the spirit and scope of the appended claims. the

Features described and/or exemplified for one embodiment can be used in the same or similar manner in one or more other embodiments, and/or in combination with or instead of features of other embodiments use. the

It should be emphasized that the term "comprising" when used in this specification is used to refer to the presence of stated features, elements, steps or components, but does not exclude one or more other features, elements, steps, components or The presence or increase of their combinations. the

Description of drawings

Many aspects of the invention can be better understood with reference to the following figures. The components in the figures are not drawn to scale, merely illustrating the principles of the invention. In order to facilitate illustration and description of some parts of the present invention, corresponding parts in the drawings may be exaggerated or reduced. Elements and features described in one drawing or one embodiment of the present invention may be combined with elements and features shown in one or more other drawings or embodiments. Furthermore, in the drawings, like numerals indicate corresponding parts in the several figures and may be used to indicate corresponding parts used in more than one embodiment. the

In the attached picture:

Fig. 1 is a structural representation of the semiconductor module of the embodiment of the present invention;

Fig. 2 is another schematic diagram of the semiconductor module shown in Fig. 1;

Fig. 3 is the schematic diagram that adds electric wire of the semiconductor module shown in Fig. 1;

Fig. 4 is another schematic diagram of the semiconductor module shown in Fig. 1;

Fig. 5 is a schematic cross-sectional view of the semiconductor module shown in Fig. 3;

Fig. 6 is the enlarged schematic diagram of the circle part of Fig. 5;

Fig. 7 is the example diagram of setting mold pad in the embodiment of the present invention;

Fig. 8 is another schematic diagram of the semiconductor module shown in Fig. 3;

Fig. 9 shows the schematic diagram after the semiconductor module shown in Fig. 3 is packaged;

Fig. 10 is an enlarged schematic view of the holding lead part shown in Fig. 9;

Fig. 11 is a partial example diagram of the shape of the cutting portion of the embodiment of the present invention;

Fig. 12 is a schematic front view of a semiconductor device according to an embodiment of the present invention;

Fig. 13 is a schematic side view of a semiconductor device according to an embodiment of the present invention;

Fig. 14 is a schematic diagram of the back side of the semiconductor device of the embodiment of the present invention;

Fig. 15 is the enlarged schematic diagram of the circle part of Fig. 12;

16 is a flowchart of a method of manufacturing a semiconductor device according to an embodiment of the present invention. the

Detailed ways

The foregoing and other features of the invention will become apparent from the following description, taken with reference to the accompanying drawings. In the specification and drawings, specific embodiments of the invention are disclosed, which illustrate some embodiments in which the principles of the invention may be employed. It is to be understood that the invention is not limited to the described embodiments, but rather, the invention The invention includes all modifications, variations and equivalents that come within the scope of the appended claims. the

An embodiment of the present invention provides a semiconductor module, and FIG. 1 is a schematic structural diagram of the semiconductor module of the present invention. As shown in FIG. 1 , the semiconductor module 100 includes a power element 101 and a control element 102 . For the specific configuration of the power element 101 and the control element 102 , reference may be made to the prior art, which will not be repeated here. the

As shown in Figure 1, the semiconductor module 100 also includes:

Lead frame 103, it has the first mold pad 104 that power element 101 is installed, the second mold pad 105 that control element 102 is installed, and external terminal 106;

metal wires (not shown in Figure 1), which serve as electrical connections; and,

a resin package body (not shown in FIG. 1 ), which protrudes and encapsulates the external terminals 106 of the lead frame 103;

Wherein, the second mold pad 105 is connected to the lead frame 103 through the holding wire 108 . the

Thus, by connecting the die pad on which the control element is mounted to the lead frame by holding the lead wires, it is possible to maintain stable support of the die pad on the frame. It can prevent the problem of easy deformation due to the large area of the mold pad and the connection with the inner lead only, and the metal wire will not be disconnected due to vibration during manufacturing. the

In one embodiment, the lead frame 103 can also include a frame pad (Frame Tab) 107, which can be arranged around the control element 102 of the lead frame 103, and the frame pad 107 can connect the lead wire 108 with the lead frame 103 connections. Also, the metal wires may electrically connect the power element 101 and the control element 102 via the frame pad portion 107 . Fig. 1 is illustrated by taking the frame pad 107 as an example, but the present invention is not limited thereto, for example, the frame pad may not be provided, and the specific setting may be described later. the

FIG. 2 is another schematic diagram of the semiconductor module in FIG. 1 , in order to clearly show the frame pad 107 and the holding leads 108 , other parts are omitted and only part of the frame pad and the holding leads are shown. It can be seen from FIG. 1 and FIG. 2 that the frame pad 107 is arranged around the control element 102 of the lead frame 103 and is connected to the lead frame 103 by holding the lead wire 108 . the

FIG. 3 is a schematic diagram of the semiconductor module shown in FIG. 1 with wires added. As shown in Figure 3, the length direction of the semiconductor module can be set as the X direction, the width direction of the semiconductor module can be set as the Y direction, and the thickness direction of the semiconductor module (that is, the direction perpendicular to the X and Y directions) can be set as the Z direction. direction. the

As shown in FIG. 3 , the electrical connection between the power element 101 and the control element 102 is not directly connected, but indirectly connected by metal wires through the frame pad 107 . For the sake of simplicity, only the labels of some elements are shown in FIG. 3 . the

As shown in FIG. 3 , the metal wires may include: a first metal wire 301 from the power element 101 to the frame pad 107, and a second metal wire 302 from the frame pad 107 to the control element 102; wherein, the first metal wire 301 and the second metal line 302 are different. the

In specific implementation, the first metal wire 301 may be a thin aluminum (Al) wire, and the second metal wire 302 may be an Au wire. As shown in FIG. 3 , the semiconductor module may also have a third metal wire 303 , which may be a thick Al wire. However, the present invention is not limited thereto, and other materials such as copper may also be used, and copper wires may be used instead of aluminum wires. the

In this embodiment, the power element 101 may include an IGBT, a fast recovery diode (FRD, Fast Recovery Diode), etc.; the control element 102 may include a monolithic integrated circuit (MIC, Monolithic Integrated Circuit), a cathode load diode (Di, Bootstrap Diode )etc. the

FIG. 4 is another schematic diagram of the semiconductor module in FIG. 1 . As shown in FIG. 4 , the power element 101 may include FRD1011 and IGBT1012 ; the control element 102 may include MIC1021 and Di1022 . And, as shown in FIG. 4 , the circuit includes a high-voltage circuit 401 and a low-voltage circuit 402 . the

In this embodiment, the lead frame may have a mounting portion of a power element (first die pad), a mounting portion of a control element (second die pad), leads, and a frame body. The material of the lead frame may be copper or copper alloy, and the thickness may be, for example, 0.5 mm. The metal wire between the power element 101 (IGBT, FRD) and the lead may be a thick aluminum wire, for example, may be 300 microns. Between the control element 102 (MIC, Di) and the frame pad 107 may be a thin gold wire, for example may be 30 microns. Between the frame pad 107 and the power element 101 (IGBT) may be a thin aluminum wire, for example 150 microns. But the present invention is not limited thereto, and the specific thickness or size can be determined according to actual needs. the

Thus, a plurality of power elements and a control element that controls the power elements are mounted on a lead frame and encapsulated with resin, and in the structure of this semiconductor module (IPM), the wiring that transmits the signal generated from the control element does not Directly connected to the power element, but connected to the power element through the frame pad, so that the heat generated by the power element (heat transfer through the metal wire) can be cut off. the

In addition, a portion of the frame pad portion is electrically floating during manufacture, and since the metal wires do not directly connect the elements, stress along the metal wires is not applied to the control elements. Moreover, because there are more than one metal wire, different metal wires can be switched to at the frame pad, so the heat transfer path is dispersed, so that the heat transfer can be further prevented. the

In one embodiment, the first mold pad on which the power element 101 is installed may be disposed close to the inner surface of the resin package, so that the first mold pad and the second mold pad are not on the same plane. However, the present invention is not limited thereto, and other embodiments may also be adopted. the

FIG. 5 is a schematic cross-sectional view of the semiconductor module shown in FIG. 3 . As shown in FIG. 5 , the first die pad 104 on which the power element 101 is mounted is provided on the inner surface of the resin package 501 . In the thickness direction (Z direction) of the semiconductor module, the mounting portion of the power element may be sunken; thus the first mold pad 104 and the frame pad portion 107 are not on the same plane. the

As shown in Figure 5, the lead frame can also have:

One side of the insulating layer 502 is adhered to the outer surface of the first mold pad 104 on which the power element 101 is installed; the other side is in contact with the heat dissipation plate 503 . the

One side of the heat sink 503 is in contact with the other side of the insulating layer 502 , and the other side of the heat sink 503 is exposed from the surface (mold surface) of the semiconductor module. the

As shown in FIG. 5 , in the thickness direction (Z direction) of the semiconductor module, the projected area of the frame pad portion 107 does not overlap with the projected area of the heat sink 503 . That is, the frame pad portion 107 and the heat dissipation plate 503 are staggered. the

Therefore, by disposing the heat dissipation plate, the heat dissipation performance can be better improved. Moreover, the frame pad avoids the projected area of the heat dissipation plate, which can prevent the transfer of heat, for example, the heat transfer from the heat dissipation plate through the mold resin. the

FIG. 6 is an enlarged schematic diagram of the circled part in FIG. 5 , and the control element and the power element are not shown in FIG. 6 for the sake of simplicity. As shown in FIG. 6 , the first die pad 104 on which the power components are installed, the insulating layer 502 and the heat dissipation plate 503 can be stacked in sequence. It should be noted that, for clarity of description, FIG. 6 only schematically shows relevant components, but the present invention is not limited thereto. For example, components in the figure may also be divided into finer layers during specific implementation. the

The case where the frame pad is provided and the die pad on which the power element is mounted is sunk is described above, but the present invention is not limited thereto. Fig. 7 is another example diagram of setting the first mold pad and the second mold pad according to the embodiment of the present invention, and only shows a part of the structure for the sake of simplicity. the

As shown in FIG. 7(A), the first mold pad 104 with the power element 101 installed and the second mold pad 105 with the control element 102 mounted on the same plane can be connected to the power element through a thin first metal wire 301 101 and control element 102. the

In addition, as shown in FIG. 7(B), the first mold pad 104 on which the power element 101 is installed and the second mold pad 105 on which the control element 102 is installed can also be arranged on the same plane; and a frame pad 107 is provided, the The frame pad part 107 may be provided separately from the second mold pad 105 . The power element 101 and the frame pad 107 are connected by a thin first metal wire 301; the frame pad 107 and the control element 102 are connected by a thin second metal wire 302. the

In addition, as shown in FIG. 7(C), the first mold pad 104 on which the power element 101 is installed and the second mold pad 105 on which the control element 102 is installed may also be arranged on different planes. The power element 101 and the control element 102 are connected by thin first metal wires 301 . the

It is worth noting that the above is only a schematic description of the mold pad arrangement method, the present invention is not limited thereto, and specific implementation methods can be determined according to actual conditions. the

FIG. 8 is another schematic diagram of the semiconductor module shown in FIG. 3 , mainly showing the disposition of the heat sink 503 on the semiconductor module. And, as shown in FIG. 8 , a high-voltage circuit 401 and a low-voltage circuit 402 are included in the circuit. the

In a specific implementation, for a mold pad installed with multiple power components, the cooling plate 503 can be a whole. the

In this embodiment, the heat dissipation plate 503 may be a metal substrate, and its size may be, for example, 45*13*0.8 (mm). The resin package 501 may be epoxy resin, and its size may be, for example, 60*30*7 (mm). the

However, the present invention is not limited thereto, and the heat dissipation plate 503 may also be a ceramic substrate. For example, one side of the ceramic substrate can be soldered to the lead frame with copper foil; the other side is exposed from the mold surface (the exposed surface can have copper attached). In specific implementation, if a heat dissipation plate is prepared, the manufacturing process can be the same. the

In addition, in actual implementation, a thermal detection sensor may also be installed on the lead frame. For example, a thermistor may be installed in the mold pad on which the components are installed, and its size may be, for example, 2*1.2*1.2 (mm). Thermistors can have holding leads at both ends, which can be held stably in resin molding molds. This prevents solder joint cracks; moreover, the creepage distance between the electrodes can be obtained. the

FIG. 9 is a schematic diagram of the packaged semiconductor module shown in FIG. 3 . As shown in FIG. 9 , by connecting the mold pad (for example, the frame pad) and the lead frame by holding the lead wire 108 , the frame pad can be stably supported on the frame body. the

FIG. 10 is an enlarged view of the holding lead portion (circled portion) shown in FIG. 9 , showing only a partial configuration for simplicity. As shown in FIG. 10 , the holding lead 108 may have a cutout portion 901 having a small cross section inside the resin package 501 . Wherein, the cut portion 901 is easily broken due to its smaller cross-section than other portions of the holding lead wire 108 . the

In specific implementation, the cutting part (901) can be a part with a through hole on the holding lead (108) (as shown in Figure 9); or it can be a part with a V shape, or a part with a concave shape, or A part whose thickness is thinner than other parts. the

Fig. 11 is a partial exemplary view of the shape of the cutting portion in the embodiment of the present invention. As shown in FIG. 11 , the cut-off portion may have through holes, which may be regular or irregular round holes, square holes, diamond-shaped holes, and the like. The cut-off portion may also have a V shape, or have a concave shape or the like. But the present invention is not limited thereto, as long as the cross-section is smaller than other parts holding the lead wire and can be easily disconnected, the specific shape can be determined according to the actual situation. the

An embodiment of the present invention also provides a semiconductor device, which is formed by removing unnecessary parts of the above-mentioned semiconductor module. the

12 is a schematic front view of a semiconductor device according to an embodiment of the present invention; FIG. 13 is a schematic side view of a semiconductor device according to an embodiment of the present invention; FIG. 14 is a schematic rear view of a semiconductor device according to an embodiment of the present invention. As shown in FIGS. 12 to 14 , a semiconductor device 1200 can be formed after removing unnecessary parts of the packaged semiconductor module 100 . the

For the specific internal structure of the semiconductor device 1200, reference may be made to FIGS. 1 to 11 . Wherein, the semiconductor device 1200 includes a power element 101 and a control element 102, and the semiconductor device 1200 may also have:

Lead frame 103, it has the first mold pad 104 that power element 101 is installed, the second mold pad 105 that control element 102 is installed, and external terminal 106;

metal wires, which serve as electrical connections;

A resin package 501 that protrudes and encapsulates the external terminals 106 of the lead frame 103;

Wherein, the second mold pad 105 is connected to one end of the holding lead 108 , and the other end of the holding lead 108 is located inside the resin package 501 . the

In one embodiment, the lead frame 103 may further have a frame pad 107 , and the frame pad 107 may be provided around the control element 102 of the lead frame 103 . Furthermore, one end of the holding lead 108 is connected to the frame pad portion 107 , and the other end of the holding lead 108 is located inside the resin package 501 . the

In a specific implementation, the holding lead (108) can be cut through a cutting portion (901) with a small cross section, so that the other end is located inside the resin package (501). Thus, since the holding lead is provided with a cutting portion (with a small cross-sectional area) inside the resin package, the holding lead can be easily cut by stretching. the

FIG. 15 is an enlarged schematic view of the circled portion in FIG. 12 . As shown in FIG. 15 , the holding lead 108 is cut at the cutting portion. Thereby, the holding lead wire of semiconductor device is positioned at the inside of resin encapsulation body, and the notch of holding lead wire outside resin encapsulation body can not protrude; quality. the

An embodiment of the present invention also provides a method for manufacturing a semiconductor device, by which the above-mentioned semiconductor module is formed into the above-mentioned semiconductor device. the

Fig. 16 is a flowchart of a manufacturing method of a semiconductor device according to an embodiment of the present invention. As shown in Fig. 16, the manufacturing method includes:

Step 1601, encapsulating the lead frame with the power element and the control element installed therein through a resin package, wherein the lead frame is connected to the mold pad by holding the lead wire;

Step 1602 , cut off the holding lead to remove a part of the holding lead, so that the remaining part of the holding lead is located inside the resin package. the

In a specific implementation, the holding lead may have a cutout portion with a small cross-section, and the cutout portion is disposed inside the resin package. And, in the above-mentioned removing step 1602, the holding lead is cut off at the cut portion by stretching, so that the remaining part of the holding lead is located inside the resin package. the

In this embodiment, other parts of the manufacturing method may refer to the prior art. In addition, instead of all the leads used for the circuit connection of the semiconductor device, it is also possible to use a structure in which the lead holding the cut portion is held inside the package. the

It can be known from the above embodiments that by connecting the die pad on which the control element is installed with the lead frame by holding the lead wire, the stable support of the die pad on the frame can be maintained. It can prevent the problem of easy deformation due to the large area of the mold pad and the connection with the inner lead only, and the metal wire will not be disconnected due to vibration during manufacturing. the

In addition, by setting the frame pad between the control element and the power element, the control element and the power element are no longer directly connected, preventing the heat emitted by the power element from being directly transferred to the control element; The connection can maintain the stable support of the frame pad on the frame body, so as to ensure that the vibration during manufacturing will not cause the metal wire to break. the

Furthermore, by pulling out a part of the holding lead so that the remaining part of the holding lead is located inside the resin package, it is possible to obtain a certain creepage distance without notching on the surface of the resin package. the

In addition, by providing the cutting portion inside the resin package, the holding lead can be easily cut by stretching when drawing out. the

The preferred embodiments of the present invention have been described above with reference to the accompanying drawings. The many features and advantages of these embodiments are apparent from this detailed description, and thus the appended claims are intended to cover all such features and advantages of these embodiments that fall within their true spirit and scope. Moreover, since many modifications and changes will readily occur to those skilled in the art, it is not intended to limit the embodiments of the present invention to the precise structures and operations illustrated and described, but to cover all suitable modifications and equivalents falling within the scope thereof things. the

Specific embodiments of the invention are disclosed herein. Those of ordinary skill in the art will readily recognize that the present invention has other applications in other environments. In fact, many implementations and implementations exist. The appended claims are in no way intended to limit the scope of the invention to the specific embodiments described above. In addition, any reference to "means for" is intended to delineate elements and explain the means-plus-function of the claims, and any referenced elements that do not specifically use "means for" are not intended to be used A means-plus-function element is understood even if the claim includes the word "means". the

While the invention has been shown and described with respect to a particular preferred embodiment or embodiments, it is obvious that equivalent modifications and alterations will occur to those skilled in the art upon the reading and understanding of the specification and drawings. In particular, with regard to the various functions performed by the aforementioned elements (parts, components, means, compositions, etc.), unless otherwise indicated, it is intended that terms used to describe these elements (including references to "means") correspond to specific Any element that is functional (ie, functionally equivalent), even if that element is structurally different from the disclosed structure that performs that function in the illustrated example embodiment or embodiments of the invention. Additionally, while specific features of the invention have been described above with respect to only one or more of several illustrated embodiments, such features may be incorporated as needed and considered advantageous to any given or particular application. Combined with one or more other features of other embodiments. the

Claims (12)

1. A semiconductor module, comprising a power element (101) and a control element (102), characterized in that the semiconductor module has: A lead frame (103) having a first die pad (104) on which the power element (101) is mounted, a second die pad (105) on which the control element (102) is mounted, and external terminals (106) ; metal wires (301, 302, 303), which serve as electrical connections; and, a resin package (501) protruding and encapsulating the external terminal (106) of the lead frame (103); Wherein, the second mold pad (105) is connected to the lead frame (103) through a holding lead (108). 2. The semiconductor module according to claim 1, characterized in that, the lead frame (103) further has a frame pad (107), and the metal wires (301, 302) pass through the frame pad (107) The power element (101) and the control element (102) are electrically connected; and the frame pad (107) is connected to the lead frame (103) through a holding lead (108). 3. The semiconductor module according to claim 1 or 2, characterized in that, the holding lead (108) is provided with a cutout portion (201) with a small cross-section in the resin package (501). 4. The semiconductor module according to claim 3, characterized in that, the cutting part (201) is a part with a through hole on the holding lead (108), or a part with a V shape, or a part with a concave Shaped part, or a part whose thickness is thinner than other parts. 5. The semiconductor module according to claim 1 or 2, characterized in that, the first mold pad (104) on which the power element (101) is installed is arranged close to the inner surface of the resin package (501), This makes the first mold pad (104) and the second mold pad (105) not on the same plane. 6. The semiconductor module according to claim 1 or 2, characterized in that, the lead frame (103) further has: an insulating layer (502), one side of which is adhered to the outer surface of the first mold pad (104) on which the power element (101) is installed; A cooling plate (503), one side of which is in contact with the other side of the insulating layer (502), and the other side of the cooling plate (503) is exposed from the surface of the semiconductor module. 7. The semiconductor module according to claim 6, characterized in that, in the thickness direction of the semiconductor module, the projected area of the second mold pad (105) is different from the projected area of the heat sink (503) coincide. 8. A semiconductor device, comprising a power element (101) and a control element (102), characterized in that the semiconductor device has: A lead frame (103) having a first die pad (104) on which the power element (101) is mounted, a second die pad (105) on which the control element (102) is mounted, and external terminals (106) ; metal wires (301, 302, 303), which serve as electrical connections; a resin package (501) protruding and encapsulating the external terminal (106) of the lead frame (103); Wherein, the second mold pad (105) is connected to one end of the holding lead (108), and the other end of the holding lead (108) is located inside the resin package (501). 9. The semiconductor device according to claim 8, characterized in that, the lead frame (103) further includes a frame pad (107), and the metal wires (301, 302) pass through the frame pad (107) ) to electrically connect the power element (101) and the control element (102). 10. The semiconductor device according to claim 8 or 9, characterized in that, the holding lead (108) is cut off at a cutting portion (201) with a small cross-section, so that the other end is located in the resin package (501) inside. 11. A manufacturing method of a semiconductor device, characterized in that the manufacturing method comprises: In the encapsulation step, the lead frame (103) on which the power element (101) and the control element (102) are mounted is encapsulated through a resin encapsulation body (501), wherein the lead frame (103) maintains the lead wire (108) with the second Die pad (105) connection; In the removing step, the holding lead (108) is cut off to remove a part of the holding lead (108), so that the remaining part of the holding lead (108) is located inside the resin package (501). 12. The manufacturing method according to claim 11, characterized in that, the holding lead (108) has a cutout portion (201) with a small cross-section, and the cutout portion (201) is provided on the resin package (501 )internal; And, the holding lead (108) is cut off at the cutting portion (201) by stretching in the removing step, so that the remaining part of the holding lead (108) is located at the resin package internal.

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