CN103811077A - 闪存中的资料补偿方法 - Google Patents
闪存中的资料补偿方法 Download PDFInfo
- Publication number
- CN103811077A CN103811077A CN201210449187.4A CN201210449187A CN103811077A CN 103811077 A CN103811077 A CN 103811077A CN 201210449187 A CN201210449187 A CN 201210449187A CN 103811077 A CN103811077 A CN 103811077A
- Authority
- CN
- China
- Prior art keywords
- storing state
- storage unit
- probability
- flash memory
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3422—Circuits or methods to evaluate read or write disturbance in nonvolatile memory, without steps to mitigate the problem
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
Description
Claims (11)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210449187.4A CN103811077B (zh) | 2012-11-12 | 2012-11-12 | 闪存中的资料补偿方法 |
US13/727,939 US9047982B2 (en) | 2012-11-12 | 2012-12-27 | Data compensating method for flash memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210449187.4A CN103811077B (zh) | 2012-11-12 | 2012-11-12 | 闪存中的资料补偿方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103811077A true CN103811077A (zh) | 2014-05-21 |
CN103811077B CN103811077B (zh) | 2017-03-29 |
Family
ID=50681567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210449187.4A Active CN103811077B (zh) | 2012-11-12 | 2012-11-12 | 闪存中的资料补偿方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9047982B2 (zh) |
CN (1) | CN103811077B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109102837A (zh) * | 2016-04-14 | 2018-12-28 | 杭州海存信息技术有限公司 | 含有哑字线的三维一次编程存储器 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104112477B (zh) * | 2013-04-19 | 2017-07-07 | 光宝科技股份有限公司 | 用于固态储存装置中晶体单元的群组区分方法 |
US20140359202A1 (en) * | 2013-05-31 | 2014-12-04 | Western Digital Technologies, Inc. | Reading voltage calculation in solid-state storage devices |
US9349477B2 (en) | 2014-06-16 | 2016-05-24 | Seagate Technology Llc | Inter-cell interference estimation based on a pattern dependent histogram |
US9378090B2 (en) | 2014-06-16 | 2016-06-28 | Seagate Technology Llc | Cell-to-cell program interference aware data recovery when ECC fails with an optimum read reference voltage |
TWI550628B (zh) * | 2014-07-16 | 2016-09-21 | 群聯電子股份有限公司 | 解碼方法、記憶體儲存裝置及記憶體控制電路單元 |
CN107204204B (zh) * | 2016-03-16 | 2020-01-31 | 建兴储存科技(广州)有限公司 | 固态储存装置的断电期间估计方法 |
CN111863097B (zh) * | 2020-06-29 | 2022-06-17 | 联芸科技(杭州)有限公司 | 快闪存储器的读取控制方法及装置 |
US20230229553A1 (en) * | 2023-03-20 | 2023-07-20 | Intel NDTM US LLC | Zero voltage program state detection |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200623079A (en) * | 2004-12-24 | 2006-07-01 | Lite On It Corp | Method and apparatus for automatic adjustment procedure of the optical drive |
CN102132353A (zh) * | 2008-07-01 | 2011-07-20 | Lsi公司 | 用于闪存存储器中读取端单元间干扰减轻的方法和装置 |
US20110216598A1 (en) * | 2010-03-02 | 2011-09-08 | Samsung Electronics Co., Ltd | Memory system and operating method thereof |
US20120269003A1 (en) * | 2011-04-25 | 2012-10-25 | Sang-Sik Kim | Data decision method and memory |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5590620B2 (ja) * | 2008-09-30 | 2014-09-17 | エルエスアイ コーポレーション | メモリ・デバイスの軟データ生成の方法および装置 |
US8427875B2 (en) * | 2010-12-07 | 2013-04-23 | Silicon Motion Inc. | Method and memory controller for reading data stored in flash memory by referring to binary digit distribution characteristics of bit sequences read from flash memory |
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2012
- 2012-11-12 CN CN201210449187.4A patent/CN103811077B/zh active Active
- 2012-12-27 US US13/727,939 patent/US9047982B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200623079A (en) * | 2004-12-24 | 2006-07-01 | Lite On It Corp | Method and apparatus for automatic adjustment procedure of the optical drive |
CN102132353A (zh) * | 2008-07-01 | 2011-07-20 | Lsi公司 | 用于闪存存储器中读取端单元间干扰减轻的方法和装置 |
US20110216598A1 (en) * | 2010-03-02 | 2011-09-08 | Samsung Electronics Co., Ltd | Memory system and operating method thereof |
US20120269003A1 (en) * | 2011-04-25 | 2012-10-25 | Sang-Sik Kim | Data decision method and memory |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109102837A (zh) * | 2016-04-14 | 2018-12-28 | 杭州海存信息技术有限公司 | 含有哑字线的三维一次编程存储器 |
Also Published As
Publication number | Publication date |
---|---|
US20140133225A1 (en) | 2014-05-15 |
US9047982B2 (en) | 2015-06-02 |
CN103811077B (zh) | 2017-03-29 |
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Owner name: GUANGBAO SCIENCE + TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: JIANXING ELECTRONIC SCIENCE +. TECHNOLOGY CO., LTD. Effective date: 20140630 |
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Effective date of registration: 20140630 Address after: Ruiguang road Taiwan Taipei City Neihu district China No. 392 22 floor Applicant after: Lite-On Technology Corporation Address before: Ruiguang road Taiwan Taipei City Neihu district China No. 392 14 floor Applicant before: Jianxing Electronic Science &. Technology Co., Ltd. |
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Effective date of registration: 20170104 Address after: No. 25 West Road, Science City, Guangzhou high tech Industrial Development Zone, Guangdong, China Applicant after: Lite-On Electronic (Guangzhou) Co., Ltd. Applicant after: Guangbao Sci-Tech Co., Ltd. Address before: Ruiguang road Taiwan Taipei City Neihu district China No. 392 22 floor Applicant before: Guangbao Sci-Tech Co., Ltd. |
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Effective date of registration: 20200115 Address after: Room 302, factory a, No.8 Guangbao Road, Science City, Huangpu District, Guangzhou City, Guangdong Province Patentee after: Jianxing storage technology (Guangzhou) Co., Ltd Address before: No. 25 West Road, Science City, Guangzhou high tech Industrial Development Zone, Guangdong, China Co-patentee before: Lite-On Technology Corporation Patentee before: Guangbao Electronics (Guangzhou) Co., Ltd. |