CN103746288A - Overprinting chirp structure-based DFB semiconductor laser and laser array - Google Patents

Overprinting chirp structure-based DFB semiconductor laser and laser array Download PDF

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CN103746288A
CN103746288A CN201310717150.XA CN201310717150A CN103746288A CN 103746288 A CN103746288 A CN 103746288A CN 201310717150 A CN201310717150 A CN 201310717150A CN 103746288 A CN103746288 A CN 103746288A
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chirp
grating
structure
laser
semiconductor laser
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CN201310717150.XA
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CN103746288B (en
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郑吉林
李玮淳
陈向飞
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南京大学
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Abstract

The invention discloses an overprinting chirp structure-based distributed feedback (DFB) semiconductor laser. Gratings in a laser cavity employs overprinting chirp raster structures; and two chirp gratings with identical nanometer precision are arranged longitudinally in the laser cavity and are written in by a cascade connection or overlapping way. After the two identical chirp gratings are overprinted longitudinally at the laser grating layer, a distributed resonant cavity is formed by using the two gratings as reflection surfaces, thereby generating multi-wavelength laser emission. In order to lower the processing cost, the reconstruction equivalent chirp (REC) technology is introduced, so that the processing precision requirement is reduced from the sub-nanometer level to the sub-micron level. In addition, the invention also provides a laser array formed by integration of two kinds of DFB semiconductor laser single chips. According to the multi-wavelength DFB semiconductor laser with the REC technology-based overprinting chirp structure, the sampling Bragg grating is used to replace the common Bragg grating and the overprinting chirp structure is realized by using the equivalent chirp, so that the process complexity degree is reduced and the yield is improved.

Description

Dfb semiconductor laser and laser array based on double exposure chirp structure

Technical field

The present invention relates to photoelectron technology field, relate in particular to that photoelectron is integrated, Wave division multiplexing, photoelectric sensing and other photoelectric communication process field, be specifically related to a kind of method and device based on special grating structure fabrication multi-wavelength distributed feed-back (DFB) semiconductor laser.

Background technology

In modern optical communication systems, along with the expansion rapidly of capacity, more and more higher for the integrated level requirement of device, make photoelectron integrated chip become the trend of development.Because volume is little, be convenient to the advantages such as array is integrated, distributed feed-back (DFB) semiconductor laser becomes one of most important active optic communication device [1].The distributed feed-back of reporting in existing document (DFB) semiconductor laser is mainly [2-5] of single wavelength or dual wavelength, and the single dfb semiconductor laser of multi-wavelength was not almost suggested.Mainly realizing at present the sharp method of penetrating of dfb semiconductor laser multi-wavelength is array integrated [6-7], and the array that a plurality of dfb semiconductor lasers carry out monolithic is integrated.The multi-wavelength that this mode realizes swashs to penetrate needs a plurality of power supplys to power to different single lasers, needs more complicated external power source circuit, and energy consumption is larger.And the dfb semiconductor laser based on double exposure chirp structure that the present invention proposes can use single laser to realize multi-wavelength to swash and penetrate, only with a power supply, just can realize sharp the penetrating of multi-wavelength that the semiconductor laser array of traditional a plurality of power supply controls is realized, simplified whole system, reduce system energy consumption, be easier to the development of the integrated trend of system.Owing to warbling, the size at the diverse location place of double exposure chirp grating is sub-nanometer scale, very high for requirement on machining accuracy, conventional method can only be processed with complicated, cost electron beam exposure high and consuming time.Document [8] and patent " method and the device of preparing semiconductor laser based on reconstruction-equivalent chirp technology " (CN200610038728.9, International PCT patent, application number PCT/CN2007/000601) proposed to utilize the dfb semiconductor laser of reconstruction-equivalent chirp (REC) complicated technology realization structure.Use this technology, can replace the electron beam exposure of sub-nanometer scale with the contact exposure of a step holographic exposure and the common sub-micrometer scale of a step, thereby greatly reduce the production time, significantly lowered production cost.

Prior art document is referring to as follows:

[1]Duan?P,Chen?L,Zhang?S,et?al.All-optical2R?regeneration?based?on?self-induced?polarization?rotation?in?single?semiconductor?optical?amplifier.(Chinese?Sci?Bull,2009)54:3704—3708.

[2]S.Akiba,M.Usami,and?K.Utaka,“1.5-μmλ/4-shifted?InGaAsP/InP?DFB?lasers,”J.Lightwave?Technol.,vol.5,no.11,pp.1564–1573,Nov.1987.

[3]M.Okai,T.Tsuchiya,K.Uomi,N.Chinone,and?T.Harada,“Corrugation-pitch?modulated?MQW-DFB?lasers?with?narrow?spectral?linewidth,”IEEE?J.Quantum?Electron.,vol.27,no.6,pp.1767–1772,Jun.1991.

[4]C.-F.Lin,M.-J.Chen,and?B.-L.Lee,“Wide-range?tunable?dualwavelength?semiconductor?laser?using?asymmetric?dual?quantum?wells,”IEEE?Photon.Technol.Lett.,vol.10,no.9,pp.1208–1210,Sep.1998.

[5]Simin?Li,Ruoming?Li,lianyan?Li,Rui?Liu,Liang?Gao?and?Xiangfei?Chen,“Dual?Wavelength?Semiconductor?Laser?Based?on?Reconstruction-Equivalent-Chirp?Technique”,IEEE?Photon.Technol.Lett.,vol.25,no.3,pp.299–302,Feb.2013.

[6]T.-P.Lee,C.E.Zah,R.Bhat,W.C.Young,B.Pathak,F.Favire,P.S.D.Lin,N.C.Andreadakis,C.Caneau,A.W.Rahjel,M.Koza,J.K.Gamelin,L.Curtis,D.D.Mahoney,and?A.Lepore,“Multiwavelength?DFB?laser?array?transmitters?for?ONTC?reconfigurable?optical?network?testbed,”J.Lightw.Technol.,vol.14,no.6,pp.967–976,Jun.1996.

[7]S.-W.Ryu,S.-B.Kim,J.-S.Sim,and?J.Kim,“Monolithic?integration?of?a?mulitiwavelength?laser?array?associated?with?asymmetric?sampled?grating?lasers,”IEEE?J.Sel.Topics?Quantum?Electron.,vol.8,no.6,pp.1358–1365,Nov./Dec.2002.

[8]Y.Dai?and?X.Chen,“DFB?semiconductor?lasers?based?on?reconstruction-equivalent-chirp?technology,”Opt.Exp.,vol.15,no.5,pp.2348–2353,Mar.2007.

Summary of the invention

Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides a kind of dfb semiconductor laser based on double exposure chirp structure, to realize, manufacture the sharp dfb semiconductor laser of penetrating of multi-wavelength, simplified whole system, reduce system energy consumption, be easier to the development of the integrated trend of system; And the double exposure chirp structure based on reconstruction-equivalent chirp (REC) technology is proposed, and greatly reduced the production time, significantly lowered production cost.

For achieving the above object, the present invention takes following technical scheme:

A dfb semiconductor laser based on double exposure chirp structure, grating in this laser chamber adopts double exposure chirp grating structure, chirp grating longitudinal arrangement in laser chamber of two identical nano-precisions, consists of; Described two chirp grating cascades or overlapping writing.If optical grating reflection wavelength:

λ=2nΛ(z)

Wherein n is effective refractive index, and the cycle that Λ (z) is chirp grating can be linear chrip, can be also non-linear chirp.The size of warbling of Λ (z) has determined the reflection bandwidth B of chirp grating, can be expressed as:

B=|2nΛ(z end)-2nΛ(z 0)|

Wherein || represent absolute value, z endthe terminal position that represents chirp grating, z 0the original position that represents chirp grating, the Free Spectral Range of multiple-wavelength laser:

FSR = λ 2 2 nΔd

The centre wavelength that wherein λ is grating, n is effective refractive index, Δ d is two gratings intervals in the vertical.FSR is the wavelength interval of multiple-wavelength laser, so Δ d has determined the gap size of multi-wavelength.The excitation wavelength number N of the distributed feed-back of this double exposure chirp structure (DFB) semiconductor laser can be estimated as:

N≈B/FSR

Further, when described two chirp gratings are overlapping, write fashionablely, lap index modulation had to two kinds of processing modes:

(1) by belonging to the region of arbitrary chirp grating modulating part, be all set to modulating part, be non-modulation part by the region division that does not belong to two chirp grating modulating part simultaneously;

(2) by the region division of two chirp grating common modulation parts, be non-modulation part, will belong to arbitrary chirp grating modulating part but not belong to common modulation region partly, be set to modulating part.

Further, described two chirp gratings are linear chrip grating or non-linear chirp grating.

Further, described double exposure chirp grating structure is realized by electron beam exposure.

The present invention also provides a kind of double exposure chirp structure dfb semiconductor laser based on reconstruction-equivalent chirp technology, grating in this laser chamber adopts sampling Bragg grating structure, contains the equivalent grating of corresponding common Bragg grating in described sampling Bragg grating structure; The excitation wavelength of this laser is done in dedicated bandwidth the equivalent grating of sampling Bragg grating; Described equivalent grating carrys out designing and making by reconstruction-equivalent chirp technology, realizes equivalent chirp optical grating construction on sampling Bragg grating; Grating in this laser chamber forms double exposure chirp structure by two longitudinal cascades of described sampling Bragg grating or overlapping writing, the sampling chirp grating that described two sampling Bragg gratings are two identical sub-micrometer precision.

According to Fourier law, the index modulation of sampling Bragg grating is:

Δn ( z ) = Σ m 1 2 F m exp [ - jmφ ( z ) + j 2 πz Λ m . ] + c . c

F mbe m rank Fourier coefficients, φ (z) is the chirp structure that sampling Bragg grating is realized.The equivalent grating periods lambda m of m rank channel (being m rank gratings) can be expressed as:

Λ m = ΛP mΛ + P

In the sampling period that wherein P is sampling Bragg grating, Λ is the cycle of holographic exposure seed grating.Take ± 1 rank channel is example, and the equivalent grating cycle of ± 1 rank channel is:

Λ ± 1 = ΛP ± Λ + P

Therefore,, on the basis of even seed grating, the warbling of sampling period will cause the warbling of equivalent grating cycle of m rank channel.The grating cycle is conventionally in nanometer more than 200, and the sampling period is usually located at several micron dimensions, and the requirement that therefore adopts REC technology to realize equivalent chirp Structure on Accuracy has been relaxed at least one more than the order of magnitude than traditional method.

Take ± 1 rank channel is example, and its reflectance spectrum bandwidth is:

B = | 2 n ( ΛP end ± Λ + P end - ΛP 0 ± Λ + P 0 ) |

Wherein, P endand P 0be respectively end and initial sampling period, the Free Spectral Range of multiple-wavelength laser:

FSR = λ 2 2 nΔd

λ=2n Λ wherein ± 1for the centre wavelength of ± 1 rank channel, n is effective refractive index, and Δ d is two sampling Bragg grating light intervals in the vertical.Therefore Δ d has determined the gap size of multi-wavelength.The excitation wavelength number N of being somebody's turn to do distributed feed-back (DFB) semiconductor laser of the double exposure chirp structure based on REC technology can be estimated as:

N≈B/FSR

Further, this laser by needed-1 grade or+1 grade of channel is arranged in the gain region of laser semi-conducting material, 0 grade of channel is arranged on outside gain region.

Further, two sampling chirp gratings are linear chrip grating or non-linear chirp grating; When described two sampling chirp gratings are overlapping, write fashionablely, lap index modulation had to two kinds of processing modes:

(1) by belonging to the region of arbitrary sampling chirp grating modulating part, be all set to modulating part, be non-modulation part by the region division that does not belong to two sampling chirp grating modulating part simultaneously;

(2) by the region division of two sampling chirp grating common modulation parts, be non-modulation part, will belong to arbitrary sampling chirp grating modulating part but not belong to common modulation region partly, be set to modulating part.

Further, the photoetching of described sampling Bragg grating structure adopts a step holographic exposure to realize even seed grating, then adopts the contact exposure of a step tradition sub-micrometer precision to realize the double exposure sampling Bragg grating structure of warbling.

The present invention also provides the laser array of the dfb semiconductor laser constitution based on double exposure chirp structure as mentioned above, by described integrated the forming of dfb semiconductor laser monolithic based on double exposure chirp structure.

The present invention also provides the laser array of the double exposure chirp structure dfb semiconductor laser constitution based on reconstruction-equivalent chirp technology as mentioned above, by described integrated the forming of double exposure chirp structure dfb semiconductor laser monolithic based on reconstruction-equivalent chirp technology.

Beneficial effect: the dfb semiconductor laser based on double exposure chirp structure that (1) the present invention proposes can use single laser to realize multi-wavelength to swash and penetrate, only with a power supply, just can realize sharp the penetrating of multi-wavelength that the semiconductor laser array of traditional a plurality of power supply controls is realized, simplified whole system, reduce system energy consumption, be easier to the development of the integrated trend of system.(2) the present invention utilizes the dfb semiconductor laser of reconstruction-equivalent chirp (REC) complicated technology realization structure.With the contact exposure of a step holographic exposure and the common sub-micrometer scale of a step, replace the electron beam exposure of sub-nanometer scale, thereby greatly reduced the production time, significantly lowered production cost.(3) double exposure based on reconstruction-equivalent chirp (REC) technology that the present invention the proposes dfb semiconductor laser of warbling, make+1 grade or-1 grade of channel be in gain region, 0 grade of channel, away from gain region, cause+1 grade or-1 grade of sharp penetrating of channel generation, and 0 grade of channel does not swash and penetrates.And the precision of the method is loosened to sub-micrometer scale, be convenient to further reduce error, it is more accurate that excitation wavelength is done, and the stability of a system improves.In the light communication system of following high-speed high capacity, especially in dwdm system and photoelectron integrated chip, the present invention contributes to provide that cost is low, energy consumption is low, stability is strong, the single laser of dfb semiconductor multi-wavelength and the multi-wavelength laser array of high finished product rate.

Accompanying drawing explanation

Fig. 1 is without overlapping double exposure chirp grating schematic diagram.

Fig. 2 is the overlapping double exposure chirp grating schematic diagram that writes.

Fig. 3 is the non-overlapping double exposure chirp grating schematic diagram (Δ d>=L) based on REC technology.

Fig. 4 is the overlapping double exposure chirp grating schematic diagram (Δ d<L) that writes based on REC technology.

Fig. 5 meets the cut blocks for printing overlapping double exposure chirp grating schematic diagram that writes based on REC technology of 1 micron of precision of live width of sampled light.

Fig. 6 does not swash and penetrates spectrum contrast schematic diagram with the double exposure of considering 1 micron of live width of the reticle semiconductor laser of warbling for not considering.

Fig. 7 is double exposure based on the REC technology semiconductor laser emulation schematic diagram of warbling.

Fig. 8 is the warble experimental spectrum figure of semiconductor laser of double exposure based on REC technology.

Embodiment

Below in conjunction with accompanying drawing, the present invention is further described.

1, the distributed feed-back of double exposure chirp structure (DFB) semiconductor laser

The grating (as Fig. 1,2) of the distributed feed-back of double exposure chirp structure (DFB) semiconductor laser laser is to adopt double exposure chirp grating structure, by the chirp grating of two identical nano-precisions longitudinal arrangement in laser chamber.Two chirp gratings can have lap, also can zero lap part.As Fig. 1, two chirp grating zero lap parts, the length of two chirp gratings is L, the distance of two chirp gratings is Δ d, in this case Δ d>=L.As Fig. 2, two chirp gratings have lap, Δ d<L, about lap, there are two kinds of processing methods: (1) belongs to the region of the arbitrary index modulation part of two chirp gratings, all be set to modulating part, the region division that does not belong to two chirp grating modulating part is simultaneously non-modulation part; (2) belong to two arbitrary index modulation parts of chirp grating but do not belong to common modulation region partly, being set to modulating part, the region of two chirp grating common modulation parts, is set to non-modulation part.Chirp grating can be linear chrip grating in addition, can be also non-linear chirp grating.Double exposure chirp grating structure is realized by electron beam exposure.

Optical grating reflection wavelength:

λ=2nΛ(z)

Wherein n is effective refractive index, and the cycle that Λ (z) is chirp grating can be linear chrip, can be also non-linear chirp.The size of warbling of Λ (z) has determined the reflection bandwidth B of chirp grating, can be expressed as:

B=|2nΛ(z end)-2nΛ(z 0)|

Wherein || represent absolute value, z endthe terminal position that represents chirp grating, z 0the original position that represents chirp grating, the Free Spectral Range of multiple-wavelength laser:

FSR = &lambda; 2 2 n&Delta;d

The centre wavelength that wherein λ is grating, n is effective refractive index, Δ d is two gratings intervals in the vertical.FSR is the wavelength interval of multiple-wavelength laser, so Δ d has determined the gap size of multi-wavelength.The excitation wavelength number N of the distributed feed-back of this double exposure chirp structure (DFB) semiconductor laser can be estimated as:

N≈B/FSR

2, distributed feed-back (DFB) semiconductor laser of the double exposure chirp structure based on REC technology

Distributed feed-back (DFB) semiconductor laser of the double exposure chirp structure based on REC technology adopts sampling Bragg grating structure.The equivalent grating that sampling Bragg grating contains corresponding common Bragg grating, the excitation wavelength of distributed feedback semiconductor laser is done in dedicated bandwidth the equivalent grating of this sampling Bragg grating, equivalence grating carrys out designing and making by reconstruction-equivalent chirp technology, on sampling Bragg grating, realize equivalent chirp optical grating construction, two this kind sampling Bragg grating longitudinal arrangement forms double exposure chirp structure, needed-1 grade or+1 grade of grating or channel be arranged in the gain region of semi-conducting material, 0 grade of channel is arranged on outside gain region, thereby realize needed-1 grade or+the sharp of 1 grade of channel penetrate.

The sampling Bragg grating of this laser is comprised of two longitudinal cascades of identical sampling chirp grating (zero lap) or overlapping writing (having overlapping).Two sampling chirp gratings can have lap, also can zero lap part (as Fig. 3 and 4).Sampling chirp grating can be line sampling chirp grating, can be also nonlinear sampling chirp grating.The contact exposure that the photoetching of the grating of the dfb semiconductor laser that the method is made realizes even seed grating and step tradition sub-micrometer precision by a step holographic exposure realizes the double exposure sampling Bragg grating structure of warbling.

According to Fourier law, the index modulation of sampling Bragg grating is:

&Delta;n ( z ) = &Sigma; m 1 2 F m exp [ - jm&phi; ( z ) + j 2 &pi;z &Lambda; m . ] + c . c

F mbe m rank Fourier coefficients, φ (z) is the chirp structure that sampling Bragg grating is realized.The equivalent grating periods lambda m of m rank channel (being m rank gratings) can be expressed as:

&Lambda; m = &Lambda;P m&Lambda; + P

In the sampling period that wherein P is sampling Bragg grating, Λ is the cycle of holographic exposure seed grating.Take ± 1 rank channel is example, and the equivalent grating cycle of ± 1 rank channel is:

&Lambda; &PlusMinus; 1 = &Lambda;P &PlusMinus; &Lambda; + P

Therefore,, on the basis of even seed grating, the warbling of sampling period will cause the warbling of equivalent grating cycle of m rank channel.The grating cycle is conventionally in nanometer more than 200, and the sampling period is usually located at several micron dimensions, and the requirement that therefore adopts REC technology to realize equivalent chirp Structure on Accuracy has been relaxed at least one more than the order of magnitude than traditional method.

Take ± 1 rank channel is example, and its reflectance spectrum bandwidth is:

B = | 2 n ( &Lambda;P end &PlusMinus; &Lambda; + P end - &Lambda;P 0 &PlusMinus; &Lambda; + P 0 ) |

Wherein, P endand P 0be respectively end and initial sampling period, the Free Spectral Range of multiple-wavelength laser:

FSR = &lambda; 2 2 n&Delta;d

λ=2n Λ wherein ± 1for the centre wavelength of ± 1 rank channel, n is effective refractive index, and Δ d is two sampling Bragg grating light intervals in the vertical.Therefore Δ d has determined the gap size of multi-wavelength.The excitation wavelength number N of being somebody's turn to do distributed feed-back (DFB) semiconductor laser of the double exposure chirp structure based on REC technology can be estimated as:

N≈B/FSR

3, distributed feed-back (DFB) the semiconductor laser simulation analysis of the double exposure chirp structure based on REC technology

By reconstruction-equivalent chirp (REC) technology, making the grating of dfb semiconductor laser, is that precision is controlled and required strict double exposure chirp grating to realize on sampling grating by equivalent method.We use+1 grade or-1 grade of sampling structure, i.e. m=± 1.We by grating ± 1 grade swash and to penetrate spectrum and be placed in required wave band, and play zero level, swash and penetrate spectrum and be placed in outside the gain region of epitaxial wafer, the REC laser that is just ± 1 grade swash and penetrate zero level that spectrum equivalence realizes former grating and swash and penetrate spectrum.The live width of sampling grating is micron dimension, than the actual grating of original nano-scale linewidth more than 100, has improved an order of magnitude, can realize with common contact exposure, and be convenient to batch production.If Fig. 3 and 4 is the double exposure chirp structure dfb semiconductor laser grating schematic diagram based on REC technology.As Fig. 3, two REC chirp grating zero lap parts, the length of two chirp gratings is L, the distance of two chirp gratings is Δ d, in this case Δ d>=L.As Fig. 4, two REC chirp gratings have lap, Δ d<L.About lap index modulation, have two kinds of processing methods: (1) belongs to the region of the arbitrary modulating part of two REC chirp gratings, is all set to modulating part, the region division that does not belong to two REC chirp grating modulating part is simultaneously non-modulation part; (2) belong to two arbitrary modulating part of REC chirp grating but do not belong to common modulation region partly, being set to modulating part, the region of two REC chirp grating common modulation parts, is set to non-modulation part.

The emulation here, we adopt+1 grade of sampling grating is example, and the total length of REC double exposure chirp grating is made as to 1600 microns, parameter used is as shown in table 1.The sampling period P here 0be 4.26 microns, chirp coefficient C is 3e-4, and Δ d is 620 microns.

Sampling period at z place, the position of single REC chirp grating is:

P(z)=P 0+Cz

We are made by reticle by REC grating used, and the reticle of our current use must meet the processing conditions of 1 micron of minimum feature.Therefore,, as Fig. 5, we are pulled to 1 micron to meet processing conditions by the region of 1 micron of the live width deficiency of sampling structure (as l1 and l2).

If Fig. 6 (a) is for the REC double exposure of the not considering 1 Micro fabrication condition dfb semiconductor laser transmission spectrum of warbling, can find out, the laser of this structure has at least 4 wavelength to swash to penetrate.If Fig. 6 (b) is the REC double exposure that the meets 1 Micro fabrication condition dfb semiconductor laser transmission spectrum of warbling, can find out, the laser of this structure has at least 3 wavelength to swash to penetrate.Although in order to meet the processing conditions of 1 micron of live width, the multi-wavelength of semiconductor laser swashs to be penetrated effect and have certain weakening, still can realize that multi-wavelength is sharp to be penetrated.

4, distributed feed-back (DFB) the semiconductor laser experimental study of the double exposure chirp structure based on REC technology

The sampling period of the dfb semiconductor laser of the double exposure chirp structure based on REC technology that we here design is 4.254 microns, and chirp coefficient is 3e-4, and Δ d is 800 microns.Other parameters are same in Table 1, and the transmission spectrum of emulation gained is as Fig. 7.Can this laser from figure easily realizing multi-wavelength swashs and penetrates.

The epitaxial wafer of the semiconductor laser of doing is specifically the epitaxial wafer that carries out MOCVD growth InGaAsP/InP on N-type InP base substrate.Active layer has the multi-quantum pit structure (MQW) of InGaAsP to form.Grating layer is positioned at active layer top, and what all plated the rear and front end of laser is anti-reflection film (AR-AR coating) (concrete technological process can refer to Patent Document CN200610038728.9, International PCT patent, application number PCT/CN2007/000601).Test and measured sharply penetrate spectrum as shown in Figure 8.This laser is realized three-wavelength and is swashed and to penetrate, and the side mode suppression ratio of three wavelength (SMSR) is all higher than 40dB, and the difference of its SMSR is 2.64dB.

Visible, double exposure chirp structure can be used for manufacturing multi-wavelength and swash the dfb semiconductor laser of penetrating.This structure helps and realizes that cost is low, energy consumption is low, stability is strong, the single laser of dfb semiconductor multi-wavelength, multi-wavelength laser array and the dwdm system of high finished product rate.

Table 1

Chamber long (L) 1600μm Effective refractive index (neff) 3.2425 Seed light grid cycle (Λ) 211.1nm Sampling duty ratio (γ) 0.5 Index modulation intensity (κ) 75/cm

The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.

Claims (10)

1. the dfb semiconductor laser based on double exposure chirp structure, is characterized in that: the grating in this laser chamber adopts double exposure chirp grating structure, chirp grating longitudinal arrangement in laser chamber of two identical nano-precisions, consists of; Described two chirp grating cascades or overlapping writing.
2. a kind of dfb semiconductor laser based on double exposure chirp structure according to claim 1, is characterized in that: when described two chirp gratings are overlapping, write fashionablely, lap index modulation is had to two kinds of processing modes:
(1) by belonging to the region of arbitrary chirp grating modulating part, be all set to modulating part, be non-modulation part by the region division that does not belong to two chirp grating modulating part simultaneously;
(2) by the region division of two chirp grating common modulation parts, be non-modulation part, will belong to arbitrary chirp grating modulating part but not belong to common modulation region partly, be set to modulating part.
3. a kind of dfb semiconductor laser based on double exposure chirp structure according to claim 1, is characterized in that: described two chirp gratings are linear chrip grating or non-linear chirp grating.
4. a kind of dfb semiconductor laser based on double exposure chirp structure according to claim 1, is characterized in that: described double exposure chirp grating structure is realized by electron beam exposure.
5. the double exposure chirp structure dfb semiconductor laser based on reconstruction-equivalent chirp technology, it is characterized in that: the grating in this laser chamber adopts sampling Bragg grating structure, in described sampling Bragg grating structure, contain the equivalent grating of corresponding common Bragg grating; The excitation wavelength of this laser is done in dedicated bandwidth the equivalent grating of sampling Bragg grating; Described equivalent grating carrys out designing and making by reconstruction-equivalent chirp technology, realizes equivalent chirp optical grating construction on sampling Bragg grating;
Grating in this laser chamber forms double exposure chirp structure by two longitudinal cascades of described sampling Bragg grating or overlapping writing, the sampling chirp grating that described two sampling Bragg gratings are two identical sub-micrometer precision.
6. a kind of double exposure chirp structure dfb semiconductor laser based on reconstruction-equivalent chirp technology according to claim 5, it is characterized in that: this laser by needed-1 grade or+1 grade of channel is arranged in the gain region of laser semi-conducting material, 0 grade of channel is arranged on outside gain region.
7. a kind of double exposure chirp structure dfb semiconductor laser based on reconstruction-equivalent chirp technology according to claim 5, is characterized in that: described two sampling chirp gratings are linear chrip grating or non-linear chirp grating; When described two sampling chirp gratings are overlapping, write fashionablely, lap index modulation had to two kinds of processing modes:
(1) by belonging to the region of arbitrary sampling chirp grating modulating part, be all set to modulating part, be non-modulation part by the region division that does not belong to two sampling chirp grating modulating part simultaneously;
(2) by the region division of two sampling chirp grating common modulation parts, be non-modulation part, will belong to arbitrary sampling chirp grating modulating part but not belong to common modulation region partly, be set to modulating part.
8. a kind of double exposure chirp structure dfb semiconductor laser based on reconstruction-equivalent chirp technology according to claim 5, it is characterized in that: the photoetching of described sampling Bragg grating structure adopts a step holographic exposure to realize even seed grating, then adopt the contact exposure of a step tradition sub-micrometer precision to realize the double exposure sampling Bragg grating structure of warbling.
9. a laser array for the dfb semiconductor laser constitution based on double exposure chirp structure described in claim 1-4, is characterized in that: this laser array is by described integrated the forming of dfb semiconductor laser monolithic based on double exposure chirp structure.
10. a laser array for the double exposure chirp structure dfb semiconductor laser constitution based on reconstruction-equivalent chirp technology described in claim 5-8, is characterized in that: this laser array is by described integrated the forming of double exposure chirp structure dfb semiconductor laser monolithic based on reconstruction-equivalent chirp technology.
CN201310717150.XA 2013-12-23 2013-12-23 DFB semiconductor laser and laser array based on double exposure chirp structure CN103746288B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108110613A (en) * 2016-11-25 2018-06-01 中国科学院半导体研究所 Multi-wavelength semiconductor distributed feedback laser array and preparation method thereof
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