CN103746029A - 一种单晶硅太阳能电池片的干法刻蚀工艺 - Google Patents
一种单晶硅太阳能电池片的干法刻蚀工艺 Download PDFInfo
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- 238000005516 engineering process Methods 0.000 title abstract description 8
- 238000001312 dry etching Methods 0.000 title abstract description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000001020 plasma etching Methods 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 12
- 238000005272 metallurgy Methods 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract description 6
- 239000000376 reactant Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 4
- 239000007789 gas Substances 0.000 abstract 2
- 238000005086 pumping Methods 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000009738 saturating Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
本发明涉及一种单晶硅太阳能电池片的干法刻蚀工艺。其特点是,包括如下步骤:(1)将装好硅片的夹具放入等离子体刻蚀机腔体,硅片数量200~1000片;(2)抽真空;(3)通入反应气体CF4和O2,控制CF4流量在190-210sccm,O2流量25-35sccm,直至工作压力达到200-220psig;(4)辉光放电,气体反应;(5)再次抽真空,然后恢复常压;(6)打开腔体门,取出夹具,卸片即可。本发明提供了一种物理冶金法单晶硅太阳能电池片的干法刻蚀工艺,适用于125×125mm物理冶金法单晶硅太阳能电池,采用该工艺可以去除扩散后硅片边缘的短路环,使刻蚀后的硅片符合工艺要求,杜绝过刻或刻不透。
Description
技术领域
本发明涉及一种单晶硅太阳能电池片的干法刻蚀工艺。
背景技术
太阳能是人类取之不尽、用之不竭的可再生能源。也是清洁能源,不产生任何环境污染。近年来,太阳能被人类广泛应用,尤其在光伏发电方面,发展迅速,通过太阳能电池片,将太阳能转换为电能。太阳能电池片的生产制造工艺较为复杂,在磷扩散过程中,硅片的所有表面包括边缘都将不可避免地扩散上磷。PN结的正面所收集到的光生电子会沿着边缘扩散有磷的区域流到PN结的背面,从而造成短路。通常采取的方法是通过刻蚀将扩散时在硅片周边形成的短路还去除,减小硅片边缘漏电流,有干法和湿法刻蚀两种。等离子体刻蚀,也称干法刻蚀,是采用高频辉光放电反应,使反应气体激活成活性粒子,如原子或游离基,这些活性粒子扩散到需刻蚀的部位,在那里与被刻蚀材料进行反应,形成挥发性反应物而被去除。
但是现有的等离子刻蚀工艺不能满足125*125mm物理冶金法单晶硅太阳能电池的刻蚀要求,会出现过刻或刻不透的现象,造成镀膜后硅片四周发白,丝网印刷、烧结后电池片漏电流大、不导电的现象,严重影响电池片的性能。
发明内容
本发明的目的是提供一种单晶硅太阳能电池片的干法刻蚀工艺,能够去除扩散后硅片边缘的短路环,使刻蚀后的硅片符合工艺要求。
一种单晶硅太阳能电池片的干法刻蚀工艺,其特别之处在于,包括如下步骤:
(1)将装好硅片的夹具放入等离子体刻蚀机腔体,硅片数量200~1000片;
(2)抽真空;
(3)通入反应气体CF4和O2,控制CF4流量在190-210sccm,O2流量25-35sccm,直至工作压力达到200-220psig;
(4)辉光放电,气体反应;
(5)再次抽真空,然后恢复常压;
(6)打开腔体门,取出夹具,卸片即可。
步骤(1)中,当数量不足200片时用假片或四氟垫片代替。
步骤(2)和(5)中,真空是指腔体内压力小于等于60psig。
步骤(4)中辉光功率设置在750~800W,反射功率小于等于20W,转速10~12rpm,放电时间855~900s。
本发明提供了一种物理冶金法单晶硅太阳能电池片的干法刻蚀工艺,适用于125*125mm物理冶金法单晶硅太阳能电池,采用该工艺可以去除扩散后硅片边缘的短路环,使刻蚀后的硅片符合工艺要求,杜绝过刻或刻不透现象。经过试用证明,采用本发明的工艺方法后,可以很好地解决125*125mm物理冶金法单晶硅太阳能电池过刻、刻不透等问题,使刻蚀边缘符合刻蚀工艺要求。
具体实施方式
实施例1:
(1)将装好硅片(125*125mm物理冶金法单晶硅硅片)的夹具放入等离子体刻蚀机腔体,所用设备为台湾志圣工业股份有限公司的等离子刻蚀机PRS,数量800片。当然根据实际情况,不足800片时还可以用假片或四氟垫片代替;
(2)抽真空,至腔体内压力小于60psig;
(3)送气体,工作气体CF4流量200sccm,O2流量30sccm,直至达到工作压力210psig;
(4)辉光放电,控制辉光功率800W,反射功率20W,转速12rpm,放电时间855s;
辉光放电时,首先母体分子CF4在高能量的电子的碰撞作用下分解成多种中性基团或离子,CF4、CF3、CF2、CF、F、C以及它们的离子。其次,这些活性粒子由于扩散或者在电场作用下到达SiO2表面,并在表面上发生化学反应。生产过程中,在中CF4掺入O2,这样有利于提高Si和SiO2的刻蚀速率;
(6)再次抽真空,至腔体内压力小于60psig,然后恢复常压;
(7)打开腔体门,取出夹具,卸片;
(8)测试刻蚀线宽度1mm以内,边缘电压大于等于160mV,电阻大于等于20kΩ,镀膜后硅片四周未出现发白现象,漏电流小于等于0.02A,以上数据、现象说明无过刻或刻不透,符合刻蚀工艺要求。
采用上述方法后的批量测试数据对比表如下(抽检数量:刻蚀机夹具上中下各5片):
从上表中可以看出,与背景技术相比,本发明刻蚀工艺得到的硅片合格率明显提高。
Claims (4)
1.一种单晶硅太阳能电池片的干法刻蚀工艺,其特征在于,包括如下步骤:
(1)将装好硅片的夹具放入等离子体刻蚀机腔体,硅片数量200~1000片;
(2)抽真空;
(3)通入反应气体CF4和O2,控制CF4流量在190-210sccm,O2流量25-35sccm,直至工作压力达到200-220psig;
(4)辉光放电,气体反应;
(5)再次抽真空,然后恢复常压;
(6)打开腔体门,取出夹具,卸片即可。
2.如权利要求1所述的一种单晶硅太阳能电池片的干法刻蚀工艺,其特征在于:步骤(1)中,当数量不足200片时用假片或四氟垫片代替。
3.如权利要求1所述的一种单晶硅太阳能电池片的干法刻蚀工艺,其特征在于:步骤(2)和(5)中,真空是指腔体内压力小于等于60psig。
4.如权利要求1所述的一种单晶硅太阳能电池片的干法刻蚀工艺,其特征在于:步骤(4)中辉光功率设置在750~800W,反射功率小于等于20W,转速10~12rpm,放电时间855~900s。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1441504A (zh) * | 2003-04-03 | 2003-09-10 | 上海交通大学 | 高效低成本大面积晶体硅太阳电池工艺 |
CN101241952A (zh) * | 2007-02-07 | 2008-08-13 | 北京中科信电子装备有限公司 | 高效低成本薄片晶体硅太阳能电池片工艺 |
CN102290494A (zh) * | 2011-09-14 | 2011-12-21 | 江阴鑫辉太阳能有限公司 | 一种太阳能电池片干法刻蚀工艺 |
US20120060915A1 (en) * | 2009-03-17 | 2012-03-15 | Imec | Method for plasma texturing |
CN102956741A (zh) * | 2011-08-17 | 2013-03-06 | 云南天达光伏科技股份有限公司 | 一种太阳能电池的制作工艺 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1441504A (zh) * | 2003-04-03 | 2003-09-10 | 上海交通大学 | 高效低成本大面积晶体硅太阳电池工艺 |
CN101241952A (zh) * | 2007-02-07 | 2008-08-13 | 北京中科信电子装备有限公司 | 高效低成本薄片晶体硅太阳能电池片工艺 |
US20120060915A1 (en) * | 2009-03-17 | 2012-03-15 | Imec | Method for plasma texturing |
CN102956741A (zh) * | 2011-08-17 | 2013-03-06 | 云南天达光伏科技股份有限公司 | 一种太阳能电池的制作工艺 |
CN102290494A (zh) * | 2011-09-14 | 2011-12-21 | 江阴鑫辉太阳能有限公司 | 一种太阳能电池片干法刻蚀工艺 |
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