CN103681729A - Organic light emitting diode panel and electronic device comprising same - Google Patents

Organic light emitting diode panel and electronic device comprising same Download PDF

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CN103681729A
CN103681729A CN 201210319667 CN201210319667A CN103681729A CN 103681729 A CN103681729 A CN 103681729A CN 201210319667 CN201210319667 CN 201210319667 CN 201210319667 A CN201210319667 A CN 201210319667A CN 103681729 A CN103681729 A CN 103681729A
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emitting
light
insulating
anode
organic
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CN 201210319667
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Chinese (zh)
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李竣凯
吴芳奕
徐湘伦
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群康科技(深圳)有限公司
奇美电子股份有限公司
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Abstract

The inventionprovides an organic light emitting diode panel and an electronic device comprising the organic light emitting diode panel, wherein the organic light emitting diode panel comprises a substrate, an anode, a composited light emitting layer, a cathode and one or more composite insulating layers, the anode is located on the substrate, the composite light emitting layer is located on the anode, the composite insulating layer is provided with two or more insulating layers, the two or more insulating layers have different coefficients of refraction, and the composite insulating layer is at least on the cathode or between the substrate and the anode.

Description

有机发光二极管面板及包括该发光二极管面板的电子装置 The organic light emitting diode panel and an electronic device including the light-emitting diode panel

技术领域 FIELD

[0001] 本发明涉及一种电致发光半导体元件,且特别是涉及有机发光二极管面板及其电 [0001] The present invention relates to an electroluminescent semiconductor devices, and more particularly relates to an organic light emitting diode panel and electrically

子装置。 Child device.

背景技术 Background technique

[0002] 有机发光二极管面板因具有低功率、高反应速度、广视角与高演色性等优势,因此被作为多种电子装置的光源,其中电子装置例如为照明设备、显示装置或移动装置等。 [0002] The organic light emitting diode panel due to a low power, high response speed, wide viewing angle and a high color rendering property advantages, and therefore is used as a light source a variety of electronic devices, wherein electronic devices such as lighting devices, display devices or mobile devices. 举例来说,有机发光二极管可以作为被动式、主动式有机发光显示器,又或者,作为植物工厂中的照明设备的照明光源。 For example, the organic light emitting diode may be used as passive, active matrix organic light emitting display, or illumination source in the plant as a plant lighting device.

[0003] 有机发光二极管面板具有依序堆叠的阳极、空穴传输层、发光层、电子传输层与阴极,其中空穴传输层、发光层与电子传输为有机材料。 [0003] The organic light emitting diode sequentially stacked panel has an anode, a hole transport layer, emission layer, electron transport layer and a cathode, wherein a hole transport layer, light emitting layer and an electron transporting organic material. 当阳极与阴极之间的电压形成顺向偏压时,空穴传输层的空穴与电子传输层的电子会往发光层移动,并且结合,以产生具有多个特定波段的光线。 When the voltage between the anode and the cathode is formed when the forward bias, electrons and holes move to the electron transport layer, the hole transport layer to the light emitting layer, and bonded, to produce a plurality of light having a specific wavelength band.

[0004] 对于有机发光二极管而言,若要调整有机发光二极管的发射光线(出光面的光线)的颜色时,则可以设计有机发光二极管内的共振腔长度以及电极的反射、吸收与穿透特性来选择仅使特定波段的光线穿透出光面,以藉此调整发射光线的颜色。 When the [0004] organic light emitting diode, to adjust the light emission of the organic light emitting diode (the light receiving surface) of the color, the cavity length can be designed and reflective electrode in the organic light emitting diode absorption and penetration properties selecting only the specific band of light to penetrate the surface, to thereby adjust the light emission color. 举例来说,有业者于有机发光二极管内设计多个不同厚度的微腔(micix) cavity)以调整共振腔长度,来使白色光有机发光二极管可以同时产生红色、蓝色与绿色的发射光线。 For example, the industry has designed a plurality of different thicknesses microcavity (micix) cavity) inside the organic light emitting diode in order to adjust the cavity length, so white light to the organic light emitting diode may emit light to produce red, blue and green at the same time. 然而,此种作法的工艺较为复杂,且多个不同微腔的厚度不易控制。 However, this approach is more complex process, and a plurality of microcavities of different thickness difficult to control.

[0005] 另外,目前还有通过增设四分之一波长堆叠反射波镜(quarter wavelengthstack,QffS)于有机发光二极管内来选择使特定波长的光线穿透出光面,以藉此调整发射光线的颜色。 [0005] In addition, there are still by adding a quarter-wavelength of the reflected wave stack mirror (quarter wavelengthstack, QffS) in an organic light emitting diode is selected so that specific wavelengths of light to penetrate the surface, to thereby adjust the color of the light emitted . 然而,四分之一波长堆叠反射波镜具有强烈的波长选择性,因此其仅能使特定波长的光线可通过,因此,此作法并不适合用于白色光有机发光二极管。 However, the quarter-wavelength of the reflected wave stack mirror having a strong wavelength selectivity, therefore enables only specific wavelengths of light can, therefore, this approach is not suitable for the white light OLED.

发明内容 SUMMARY

[0006] 本发明实施例提供一种有机发光二极管面板,所述有机发光二极管面板包括基板、阳极、复合发光层、阴极与至少一复合绝缘层。 Example embodiments provide an organic light emitting diode panel [0006] the present invention, the organic light emitting diode panel comprises a substrate, an anode, light-emitting composite layer, and at least one cathode composite insulating layer. 阳极位于基板的上面。 An anode positioned above the substrate. 复合发光层位于阳极的上面。 Composite luminescent layer is located above the anode. 阴极位于复合发光层的上面。 A cathode located above the composite light-emitting layer. 复合绝缘层具有至少两层绝缘层,其中这些绝缘层具有不同折射系数,且位于阴极上面及介于基板与阳极间的至少之一。 Composite insulating layer having at least two insulating layers, wherein the insulating layer has a different refractive index, and is located above the cathode, and at least one interposed between the substrate and the anode.

[0007] 本发明实施例提供一种电子装置,所述电子装置包括如前述的有机发光二极管面板、薄膜晶体管阵列与控制电路。 Example embodiments provide an electronic apparatus [0007] according to the present invention, the electronic device comprises an organic light emitting diode as the panel, a thin film transistor array and a control circuit. 薄膜晶体管阵列与有机发光二极管面板相对设置。 The thin film transistor array panel and an organic light emitting diode disposed opposite. 控制电路与有机发光二极管面板及薄膜晶体管阵列电性连接。 A control circuit connected to the organic light emitting diode panel and the thin film transistor array electrically.

[0008] 综上所述,本发明实施例提供一种可以通过设计其复合绝缘层的反射率、穿透率与吸收率来调整发射光线的颜色的有机发光二极管面板。 [0008] In summary, the present invention provides a way to adjust the light emission color organic light emitting diode panel by designing the reflectance of the composite insulating layer, transmittance and absorbance.

[0009] 为使能更进一步了解本发明的特征及技术内容,请参阅以下有关本发明的详细说明与附图,但是此等说明与所附图式仅是用来说明本发明,而非对本发明的权利要求范围作任何的限制。 [0009] In order to further understand the characteristics and technical contents of the present invention, please see the following detailed description and appended drawings of the present invention, but such description of the invention and the appended drawings are only used to illustrate, rather than the present scope of the invention as claimed in claim any limitation.

附图说明 BRIEF DESCRIPTION

[0010] 图1是本发明实施例的有机发光二极管面板的剖面结构示意图。 [0010] FIG. 1 is a schematic cross-sectional structure of the organic light emitting diode panel embodiment of the present invention.

[0011] 图2是本发明另一实施例的有机发光二极管面板的剖面结构示意图。 [0011] FIG. 2 is a schematic cross-sectional structure of the organic light emitting diode panel according to another embodiment of the present invention.

[0012] 图3是本发明另一实施例的有机发光二极管面板的剖面结构示意图。 [0012] FIG. 3 is a schematic cross-sectional structure of the organic light emitting diode panel according to another embodiment of the present invention.

[0013] 图4A是不同上发光型有机发光二极管的上层电极的反射率与波长的曲线图。 [0013] FIG. 4A is a graph showing the reflectance of the upper electrode on different emission type organic light emitting diode and the wavelength.

[0014] 图4B是不同上发光型有机发光二极管的上层电极的吸收率与波长的曲线图。 [0014] FIG. 4B is a graph showing absorbance of the top electrodes on different emission type organic light emitting diode and the wavelength.

[0015] 图4C是不同上发光型有机发光二极管的发射光线的强度与波长的曲线图。 [0015] FIG 4C is a graph showing the differences in intensity of emitted light wavelength emission type organic light emitting diode.

[0016] 图5A是不同上发光型有机发光二极管的上层电极的反射率与波长的曲线图。 [0016] FIG 5A is a graph showing the differences in the upper electrode emission type organic light emitting diode reflectance versus wavelength.

[0017] 图5B是不同上发光型有机发光二极管的发射光线的强度与波长的曲线图。 [0017] FIG 5B is a graph showing the differences in intensity of emitted light wavelength emission type organic light emitting diode.

[0018]【主要元件符号说明】 [0018] The main reference numerals DESCRIPTION

[0019] I~3:有机发光二极管面板 [0019] I ~ 3: an organic light emitting diode panel

[0020] 11、21、31:基板 [0020] 21, 31: substrate

[0021] 12:反射阳极 [0021] 12: reflective anode

[0022] 22、32:透明阳极 [0022] 22, 32: transparent anode

`[0023] 13、23、33:复合发光层 `[0023] 23, 33: light emitting layer composite

[0024] 131、231、331:空穴传输层 [0024] 131,231,331: a hole transport layer

[0025] 132、232、332:发光层 [0025] 132,232,332: a light-emitting layer

[0026] 133、233、333:电子传输层 [0026] 133,233,333: electron transport layer

[0027] 24:非透明阴极 [0027] 24: Non-transparent cathode

[0028] 14、34:半透明阴极 [0028] 14, 34: translucent cathode

[0029] 15、25、35、36:复合绝缘层 [0029] 15,25,35,36: composite insulating layer

[0030] 151、152、251、252、351、352、361、362:绝缘层 [0030] 151,152,251,252,351,352,361,362: insulating layer

[0031] 26:钝化保护层 [0031] 26: passivation layer

[0032] C311 ~314、C321 ~C324、C331、C332、C411、C412、C421、C422:曲线具体实施方式 [0032] C311 ~ 314, C321 ~ C324, C331, C332, C411, C412, C421, C422: curve DETAILED DESCRIPTION

[0033] 首先,请参照图1,图1是本发明实施例的有机发光二极管面板的剖面结构示意图。 [0033] First, referring to FIG. 1, FIG. 1 is a schematic cross-sectional structure of the organic light emitting diode panel embodiment of the present invention. 图1的有机发光二极管面板I为上发光型有机发光二极管面板,其包括基板11、反射阳极12、复合发光层13、半透明阴极14与复合绝缘层15,其中反射阳极12、复合发光层13、半透明阴极14与复合绝缘层15依序堆叠于基板11之上。 FIG 1 is an organic light emitting diode panel I is a light emitting type organic light emitting diode panel 11 includes a substrate, a reflective anode 12, light-emitting composite layer 13, the composite semi-insulating layer 14 and the cathode 15, wherein the reflective anode 12, light-emitting composite layer 13 , translucent composite insulating layer 14 and the cathode 15 are sequentially stacked on the substrate 11.

[0034] 基板11的材质例如为玻璃、透明塑料材料或晶圆。 Material [0034] The glass substrate 11 is, for example, a transparent plastic material or wafer. 反射阳极12为具有高反射率与高功函数的导体材料,例如金、铝或银的单层电极,或者是,结合铟锡氧化物与上述金属之一的复合电极。 12 is a reflective anode conductive material having high reflectivity and high work function, such as a monolayer electrode of gold, aluminum or silver, or a combination of indium tin oxide and the metal of one of said composite electrode. 半透明阴极14为具有低功函数的半透明导体材料,例如银、铝、镁或钙的单层电极,或者是,结合上述金属至少其中之二所形成的复合电极。 Translucent translucent cathode 14 is a conductive material having a low work function such as silver, aluminum, magnesium or calcium electrode monolayer, or a composite electrode in conjunction with the metal of which at least two formed.

[0035] 复合发光层13具有依序堆叠的空穴传输层131、发光层132与电子传输层133。 [0035] The composite light-emitting layer 13 having a hole transporting layer 131, luminescent layer 132 are sequentially stacked and the electron transport layer 133. 空穴传输层131为具有高热稳定性的有机材料,例如N,N'- 二苯基-N,N'-二(3-甲基苯基)-1,I'-联苯_4,4'-=K(TPD)材料或N,N'-二苯基-N,N' - (1_萘基)_1,I,_ 联苯-4,4'-二胺(NPB)材料。 The hole transport layer 131 is an organic material having a high thermal stability, for example N, N'- diphenyl -N, N'- bis (3-methylphenyl) -1, I'- biphenyl _4,4 '- = K (TPD) material or N, N'- diphenyl -N, N' - (1_ naphthalenyl) _1, I, _ biphenyl-4,4'-diamine (NPB) material. 发光层132为具有高量子效率的有机材料,例如4- (二甲氰)-2-甲基-6- (4-二氨基甲基苯乙烯)-4H-吡喃(DCM)、喹吖啶酮(QA)、8-羟基喹啉铝(AlQ)或4,4'-二(2,2-二苯乙烯基)-1,I'-联苯(DPVBi)材料。 An organic light emitting layer 132 is a material having high quantum efficiency, such as 4- (dimethylamino cyanomethyl) -2-methyl-6- (4-aminomethyl styrene) -4H- pyran (DCM), quinacridone -one (QA), 8- hydroxyquinoline aluminum (of AlQ) or 4,4'-bis (2,2-diphenyl-vinyl) -1, I'- biphenyl (DPVBi) material. 电子传输层133为具有适当的电子传输能力的有机材料,例如8-羟基喹啉铝、三(8-羟基喹啉)铝(A1Q3)、3-(联苯-4-基)-5- (4-叔丁基苯基)-4-苯基-4H-1,2,4-三唑(TAZ)或2- (4'-叔丁苯基)-5- (4,-联苯基)-1,3,4-恶二唑(PBD)材料。 Electron transport layer 133 to have an appropriate electron transporting ability of an organic material, such as 8-hydroxyquinoline aluminum, tris (8-quinolinolato) aluminum (A1Q3), 3- (biphenyl-4-yl) -5- ( 4-tert-butylphenyl) -4-phenyl -4H-1,2,4- triazole (TAZ) or 2- (4'-tert-butylphenyl) -5- (4 - biphenylyl) -1,3,4-oxadiazole (PBD) material.

[0036] 于此实施例中,有机发光二极管面板I可以是白色光有机发光二极管面板。 [0036] In this embodiment, the organic light emitting diode panel I may be a white organic light emitting diode panel. 发光层132经设计可以为复合材料层,其在顺向偏压的情况下可同时产生红色、绿色与蓝色波段的光线,以混出白色光线。 The light emitting layer 132 may be designed as a composite layer, which can generate red, green and blue band light to the case where the forward bias at the same time to mix white light.

[0037] 复合绝缘层15包括依序堆叠的至少两层绝缘层151与152,绝缘层151与152可以作为钝化保护层使用,且同时可以通过设计绝缘层151与152的反射率、吸收率或穿透率(吸收率、穿透率与反射率的总合为I)来选择使特定波段的光线通过,而达到调整发射光线的颜色的目的。 [0037] The composite insulating layer 15 includes at least two layers sequentially stacked insulating layers 151 and 152, the insulating layer 151 and 152 can be used as the passivation layer, and the reflectance can be designed at the same time the insulating layer 151 and 152, the absorption rate or transmittance (sum of I absorptivity, transmissivity and reflectivity) to select a specific band of the light rays through, to achieve the purpose of adjusting the color of light emission. 简单地说,复合绝缘层15可以同时具有保护与调整发射光线的颜色的功倉泛。 Briefly, the composite insulating layer 15 may have a protective function and adjustment of emission color cartridge light simultaneously pan.

[0038] 于此实施例中,复合绝缘层15的吸收率优选地是被设计低于10%。 [0038] In this embodiment, the absorption rate of the composite insulating layer 15 is preferably designed to be less than 10%. 另外,绝缘层151与152的折射系数介于1.4至2.6之间,紧邻半透明阴极14的绝缘层151较次紧邻半透明阴极14的绝缘层152具有较低的折射系数,且绝缘层151与152的厚度可以依据设计需求而调整,使复合绝缘层15的厚度介于3至10微米之间。 Further, the refractive index of the insulating layer is between 151 and 152 1.4 to 2.6, the insulating layer 151 adjacent to the translucent cathode 14 immediately inferior semitransparent insulating layer 14 of the cathode 152 has a lower refractive index, and the insulating layer 151 and the thickness 152 may be adjusted according to the design requirements of the composite insulating layer 15 has a thickness of between 3-10 microns. 绝缘层151与152可以是金属氧化物、金属氮化物、金属氟化物、金属碳化物、金属硼化物或其他非有机绝缘材料,例如,SiNx、SiOx、SiON, MgF2, AlF3> A10xNy、BaF2' BeO、Bi2O3' BiF3' CaF2' CdSe, CdS、CdTe, CeF3'CeO2、Cs1、Gd2O3、HfO2、HoF3、Ho2O3、In2O3、LaF3、La2O3、LiF、MgO、NaF> Na3AlF6、Na5Al3F14、Nb205、NdF3, Nd2O3, PbCl2, PbF2, PbTe, Pr6O11, Sb2O3> Ta2O5, Te02、TiN、TiO2, TiCl、ThF4、V2O5、WO3、YF3、Y2O3, YbF3, Yb2O3, ZnO`, ZnS, ZnSe, ZrO2及其组合,又或者可以是有机绝缘材料,例如NPB或AlQ材料。 Insulating layer 151 and 152 may be metal oxides, metal nitrides, metal fluorides, metal carbides, metal borides, or other non-organic insulating material, e.g., SiNx, SiOx, SiON, MgF2, AlF3> A10xNy, BaF2 'BeO , Bi2O3 'BiF3' CaF2 'CdSe, CdS, CdTe, CeF3'CeO2, Cs1, Gd2O3, HfO2, HoF3, Ho2O3, In2O3, LaF3, La2O3, LiF, MgO, NaF> Na3AlF6, Na5Al3F14, Nb205, NdF3, Nd2O3, PbCl2 , PbF2, PbTe, Pr6O11, Sb2O3> Ta2O5, Te02, TiN, TiO2, TiCl, ThF4, V2O5, WO3, YF3, Y2O3, YbF3, Yb2O3, ZnO`, ZnS, ZnSe, ZrO2, and combinations thereof, or may be organic insulating material such as NPB, or AlQ material.

[0039] 于图1的实施例中,当反射阳极12与半透明阴极14之间的电压形成顺向偏压时,空穴传输层131的空穴与电子传输层133的电子会往发光层132移动,并且结合,以产生具有多个特定波段的光线射至反射阳极12。 [0039] In the embodiment of FIG. 1, when the voltage between the anode 12 and the semi-transparent reflector 14 forward bias the cathode is formed, a hole transport layer, a hole transport layer 131 and the electron electrons into the light emitting layer 133 132 moved and combined, to produce a plurality of light having a specific wavelength band is emitted to the reflective anode 12. 值得注意的是,于空穴传输层131与反射阳极12间可具有空穴注入层,于电子传输层133与半透明阴极14间可具有电子注入层,空穴注入层及电子注入层的材质可以为有机半导体材料,例如小分子有机材料、高分子化合物材料、或有机金属化合物材料。 Notably, the hole transporting layer 131 and the reflective anode 12 may be a hole injection layer, electron transport layer 133 and the cathode 14 may have a semi-transparent electron injection layer, the hole injection layer and an electron injection layer material It may be an organic semiconductor material, such as small molecule organic materials, polymer compound materials, metal compound or an organic material. 因为反射阳极12具有高反射率,且半透明阴极14具有匹配的穿透率及反射率,因此光线被反射,共振后通过半透明阴极14与复合绝缘层15,其中复合绝缘层15的上表面可以作为有机发光二级I的出光面。 Because the reflective anode 12 has a high reflectance, and transmittance and reflectance of the semi-transparent cathode 14 has a matching, so the surface of the insulating layer 15 after the light is reflected, wherein the composite resonator with a composite cathode 14 through the translucent insulating layer 15, the surface can be used as the organic light emitting diode I.

[0040] 上发光型有机发光二极管的出光面的光线(发射光线)的强度可以使用Fabry-Perot行为函数表示如下: [0040] intensity of the light on the surface emission type organic light emitting diode (light emission) may be used in Fabry-Perot behavior functions as follows:

[0041] [0041]

Figure CN103681729AD00061

[0042],其中λ表示波长,θ表示发光平面与其法线方向的夹角,Rb(A)表示底层电极的反射率,RtO )表示上层电极的反射率,Tt表示上层电极的穿透率,k表示波向量,zbO ,Θ)表示发光层至反射电极的位置,Lmv表示共振腔长度,而ItlU)表示自由空间下的发光强度。 [0042] wherein λ represents the wavelength, [theta] represents the angle between the normal direction thereto the light emitting plane, Rb (A) shows the reflectance of the underlying electrode, RtO) represents the reflectance of the upper electrode, showing transmittance Tt of the upper electrode, k represents the wave vector, zbO, Θ) the position of a light emitting layer to the reflective electrode, represents Lmv of cavity length, and ItlU) represents emission intensity in a free space.

[0043] 于本发明实施例中,复合绝缘层15与半透明阴极14所形成的反射率即为上层电极的反射率RtU),且对应地复合绝缘层15与半透明阴极14所形成的穿透率即为上层电极的穿透率Tt。 Through [0043] embodiment, the composite reflectivity of the translucent insulating layer 15 formed on the cathode 14 is the reflectance of the upper electrode RTU) in the embodiment of the present invention, and corresponds to the composite insulating layer 15 and the cathode 14 is formed semitransparent Tt is the rate of penetration through the upper electrode. 因此,于本发明实施例中,可通过改变复合绝缘层15的吸收率、穿透率或反射率来选择使特定波段的光线可以顺利地通过出光面,以达到调整发射光线的颜色的目的。 Thus, in the embodiment of the present invention, may be selected by changing the absorption of the composite insulating layer 15, the transmittance or reflectance of light of the specific wavelength band can smoothly pass through the surface, in order to achieve the purpose of adjusting the color of the emitted light.

[0044] 值得说明的是,本发明的有机发光二极管面板并不限制于上发光型有机发光二极管,本发明的有机发光二极管还可以是下发光型有机发光二极管或穿透型有机发光二极管。 [0044] It should be noted that the organic light emitting diode panel according to the present invention is not limited to the emission type organic light emitting diode, an organic light emitting diode of the present invention may also be a lower emission type organic light emitting diode OLED or Pierce. 基于类似的原理,可以通过增设复合绝缘层于有机发光二极管的出光面,并调整复合绝缘层的吸收率、穿透率或反射率,来达到调整发射光线的颜色的功能。 Based on similar principles, can be by adding a composite insulating layer in an organic light emitting diode surface, and adjust the absorption rate of the composite insulating layer, the reflectance or transmittance, to achieve light emission color adjustment function.

[0045] 接着,请参照图2,图2是本发明另一实施例的有机发光二极管面板的剖面结构示意图。 [0045] Next, referring to FIG 2, FIG. 2 is a schematic cross-sectional structure of the organic light emitting diode panel according to another embodiment of the present invention. 图2的有机发光二极管面板2为下发光型有机发光二极管面板,其包括透明基板21、透明阳极22、复合发光层23、非透明阴极24、复合绝缘层25与钝化保护层26,其中复合绝缘层25、透明阳极22、复合发光层23、非透明阴极24与钝化保护层26依序堆叠于透明基板21之上。 FIG 2 is an organic light emitting diode panel 2 for the next emission type organic light-emitting diode panel 21 includes a transparent substrate, a transparent anode 22, light-emitting composite layer 23, the non-transparent cathode 24, the insulating layer 25 and the composite passivation layer 26, wherein the composite the insulating layer 25, a transparent anode 22, light-emitting composite layer 23, the non-transparent cathode 24 and the passivation layer 26 are sequentially stacked on the transparent substrate 21.

[0046] 透明基板21、复合发光层23与复合绝缘层25的材料与特性可通过透明基板11、复合发光层13与复合绝缘层15的描述而得知,故重复的内容将不再赘述。 [0046] The transparent substrate 21, the light emitting layer 23 and the composite material properties of the composite insulating layer 25 may be 11, the composite light-emitting layer 13 and the insulating layer 15 is a composite description may be learned by the transparent substrate, so that duplicate content will be omitted. 复合发光层23具有依序堆叠的空穴传输层231、发光层232与电子传输层233,且复合绝缘层25包括依序堆叠的至少两层绝缘层251与252,紧邻透明阳极22的绝缘层251较次紧邻透明阳极22的绝缘层252具有较低的折射系数。 Composite layer 23 has a hole transport light emitting layer 231 are sequentially stacked, the luminescent layer 232 and the electron transport layer 233, the insulating layer 25 and the composite comprises at least two sequentially stacked insulating layers 251 and 252, a transparent insulating layer adjacent to the anode 22 251 times than the insulating layer 22 adjacent to the transparent anode 252 has a lower refractive index. 空穴传输层231、发光层232、电子传输层233、绝缘层251与252的材料与特性可通过空穴传输层131、发光层132、电子传输层133、绝缘层151与152的描述而得知,故重复的内容将不再赘述。 ,, An electron transport layer 233, the material characteristics of the insulating layer 251 and 252 may be described by the hole transport layer 131 the hole transport layer 231 luminescent layer 232, the light emitting layer 132, electron transport layer 133, the insulating layer 151 and 152 is obtained It is known, so that duplicate content will be omitted.

[0047] 值得说明的是,因有机发光二极管面板2为下发光型有机发光二极管面板,因此透明阳极22为具有高功函数的透明导体材料,例如铟锡氧化物的单层电极,或者是结合多种半透明的金属氧化物所形成的复合电极。 [0047] It should be noted that, because the organic light emitting diode panel 2 for the next emission type organic light emitting diode panel, so the transparent anode 22 is a transparent conductive material having a high work function, such as a monolayer electrode of indium tin oxide, or a combination various composite metal oxide semi-transparent electrode is formed. 非透明阴极24为具有低功函数的非透明导体材料,例如铜的单层电极,或者是,结合多种非透明金属所形成的复合电极。 Non-transparent cathode 24 is a transparent non-conductive material having a low work function, such as a monolayer copper electrode, or, in conjunction with various non-metallic composite transparent electrode is formed. 另外,复合绝缘层25设置于透明基板21与透明阳极22之间,以达到调整发射光线的颜色的功能。 The composite insulating layer 25 is provided between the transparent substrate 21 and the transparent anode 22, in order to achieve light emission color adjustment function. 除此之外,钝化保护层26设置于非透明阴极24之上,以达到保护的功能,其中钝化保护层26为绝缘材料,例如SiN或SiO。 In addition, passivation layer 26 is disposed on the non-transparent cathode 24, in order to protect the function, wherein the passivation layer 26 is an insulating material, such as SiN or SiO.

[0048] 接着,请参照图3,图3是本发明另一实施例的有机发光二极管面板的剖面结构示意图。 [0048] Next, referring to FIG 3, FIG. 3 is a schematic cross-sectional structure of the organic light emitting diode panel according to another embodiment of the present invention. 图3的有机发光二极管3为穿透型有机发光二极管面板,其包括透明基板31、透明阳极32、复合发光层33、半透明阴极34、复合绝缘层35与36,其中复合绝缘层36、透明阳极32、复合发光层33、半透明阴极34与复合绝缘层35依序堆叠于透明基板31之上。 FIG 3 is an organic light emitting diode 3 to penetrate the organic light emitting diode panel 31 includes a transparent substrate, a transparent anode 32, light-emitting composite layer 33, translucent cathode 34, the insulating layer 35 and the composite 36, wherein the composite insulating layer 36, transparent anode 32, light-emitting composite layer 33, 34 and the composite cathode translucent insulating layer 35 are sequentially stacked on the transparent substrate 31.

[0049] 透明基板31、复合发光层33与复合绝缘层35、36的材料与特性可通过透明基板 [0049] The transparent substrate 31, the light emitting layer 33 and the composite material properties of the composite insulating layer through the transparent substrate 35, 36 may be

11、复合发光层13与复合绝缘层15的描述而得知,故重复的内容将不再赘述。 11, the composite light-emitting layer 13 and the insulating layer 15 of the composite described learned, so duplicate content will be omitted. 复合发光层33具有依序堆叠的空穴传输层331、发光层332与电子传输层333,复合绝缘层35包括依序堆叠的至少两层绝缘层351与352,复合绝缘层36包括依序堆叠的至少两层绝缘层361与362。 Composite layer 33 has a hole transport light emitting layer 331, the light emitting layer 332 and the electron transporting layer 333 are sequentially stacked, the insulating layer 35 comprises a composite of at least two sequentially stacked insulating layers 351 and 352, insulating layer 36 comprises a composite sequentially stacked at least two insulating layers 361 and 362. 空穴传输层331、发光层332、电子传输层333、绝缘层351、352、361、362的材料与特性可通过空穴传输层131、发光层132、电子传输层133、绝缘层151与152的描述而得知,故重复的内容将不再赘述。 Hole transport layer 331, a light emitting layer 332, and the material properties of the electron transport layer 333, the insulating layer 351,352,361,362 via the hole transport layer 131, a light emitting layer 132, electron transport layer 133, the insulating layer 151 and 152 the description that, so duplicate content will be omitted.

[0050] 值得说明的是,因有机发光二极管面板3为穿透型有机发光二极管,因此透明阳极32为具有高功函数的透明导体材料,例如铟锡氧化物的单层电极,或者是结合多种半透明的金属氧化物所形成的复合电极。 [0050] It should be noted that, because the organic light emitting diode panel 3 to penetrate the organic light emitting diode, so the transparent anode 32 is a transparent conductive material having a high work function, such as a monolayer electrode of indium tin oxide, or a combination of multiple species semitransparent metal oxide composite electrode is formed. 半透明阴极34为具有低功函数的半透明导体材料,例如银、铝、镁或钙的单层电极,或者是,结合上述金属至少其中之二所形成的复合电极。 Translucent translucent cathode 34 is a conductive material having a low work function such as silver, aluminum, magnesium or calcium electrode monolayer, or a composite electrode in conjunction with the metal of which at least two formed. 另夕卜,复合绝缘层36设置于透明基板31与透明阳极32之间,以达到调整发射光线的颜色的功能。 Another Bu Xi, composite insulating layer 36 is provided between the transparent substrate 31 and the transparent anode 32, in order to achieve light emission color adjustment function. 除此之外,复合绝缘层35设置于半透明阴极34之上,以同时达到保护与调整发射光线的颜色的功能。 In addition, the composite insulating layer 35 disposed over the semitransparent cathode 34, to protect and to simultaneously adjust the light emission color functions.

[0051] 请参照图4A,曲线C311表示不具有绝缘层的上发光型有机发光二极管的上层电极的反射率与波长的曲线,而曲线C312表示具有4微米厚度的SiN的绝缘层的上发光型有机发光二极管的上层电极的反射率与波长的曲线。 [0051] Referring to Figure 4A, the curve C311 represents a graph of reflectivity versus wavelength of an upper electrode on the light emitting type organic light emitting diode having no insulating layer, and the curve C312 represents the emission-type insulating layer of SiN having a 4 micron thickness the reflectivity of the upper electrode and the organic light emitting diode of wavelength curve. 曲线C313与C314表示具有不同复合绝缘层的上发光型有机发光二极管的上层电极的反射率与波长的曲线,其中曲线C313所对应的复合绝缘层依序由0.005微米厚度的Si0、0.45微米厚度的SiN与0.1微米厚度的SiON所堆叠而成,曲线C314所对应的复合绝缘层依序由0.1微米厚度的SiO、1.9微米厚度的SiN、0.1微米厚度的Si0、1.9微米厚度的SiN所堆叠而成。 C313 and C314 curve graph of reflectivity versus wavelength of emission type organic light emitting diode on the upper electrodes having different composite insulating layer, wherein a composite curve C313 corresponding to the insulating layer in order, a 0.005 micron thickness micron thickness Si0,0.45 the SiON and SiN 0.1 micron thickness of the stacking, the curve C314 corresponding to the sequence of the composite insulating layer of SiO 0.1 micron thickness, 1.9 micron thickness SiN, Si0,1.9 micron thickness of 0.1 micron thickness made of SiN stacked . 由曲线C311〜C314可知,可以通过设计复合绝缘层,来调整上发光型有机发光二极管的上层电极的反射率与波长之间的关系。 From the graph C311~C314, composite insulating layer can be designed to adjust the relationship between the upper electrode reflectivity versus wavelength of emission type organic light emitting diode.

[0052] 请参照图4B,曲线C321表示不具有绝缘层的上发光型有机发光二极管的上层电极的吸收率与波长的曲线,而曲线C322表示具有4微米厚度的SiN的绝缘层的上发光型有机发光二极管的上层电极的吸收率与波长的曲线。 [0052] Referring to Figure 4B, curve C321 represents a plot of absorbance versus wavelength of the upper electrode on the emission type organic light emitting diode having no insulating layer, and the curve C322 represents the emission-type insulating layer of SiN having a 4 micron thickness absorption of the upper electrode and the organic light emitting diode of wavelength curve. 曲线C323与C324表示具有不同复合绝缘层的上发光型有机发光二极管的上层电极的吸收率与波长的曲线,其中曲线C322所对应的复合绝缘层由所形成,曲线C323所对应的复合绝缘层依序由0.005微米厚度的SiO、 Curves C323 and C324 represent a plot of absorbance versus wavelength of the upper electrode on the emission type organic light emitting diodes having different composite insulating layer, wherein the curve C322 corresponding to the composite insulating layer is formed by the curve C323 corresponding to the composite insulating layer by sequence of SiO 0.005 microns thick,

0.45微米厚度的SiN与0.1微米厚度的SiON所堆叠而成,曲线C324所对应的复合绝缘层依序由0.1微米厚度的SiO、1.9微米厚度的SiN、0.1微米厚度的SiO、1.9微米厚度的SiN所堆叠而成。 SiN 0.45 micron thick SiON 0.1 micron thickness and the stacking, SiN composite curve C324 corresponding to the insulating layer in order, a SiO 0.1 micron thickness, 1.9 micron thickness SiN, 0.1 microns thickness of SiO, 1.9 microns in thickness the stacking. 由曲线C321〜C324可知,可以通过设计复合绝缘层,来调整上发光型有机发光二极管的上层电极的吸收率与波长之间的关系。 From the graph C321~C324, composite insulating layer can be designed to adjust the relationship between the absorption and the wavelength of the upper electrode emission type organic light emitting diode.

[0053] 请参照图4C,曲线C331与C332表示不同上发光型有机发光二极管的发射光线的强度与波长的曲线,其中曲线C331所对应的上发光型有机发光二极管具有4微米厚度的SiN的绝缘层,而曲线C332所对应的上发光型有机发光二极管具有依序由0.1微米厚度的SiO、1.9微米厚度的SiN、0.1微米厚度的SiO、1.9微米厚度的SiN所堆叠而成的复合绝缘层。 [0053] Referring to Figure 4C, the curve C331 and C332 graph intensity versus wavelength of the emitted light of different light emitting type organic light emitting diode, wherein the curve C331 corresponding to the emission type organic light emitting diode having a 4 micron thick SiN insulating layer, while the curve C332 corresponding to the emission type organic light emitting diode having a composite insulating layer sequentially SiO 0.1 micron thickness, 1.9 micron thick SiN, SiO 0.1 micron thickness, 1.9 micron thickness made of SiN stacked.

[0054] 接着,由图4C可以得知,仅具有4微米厚度的SiN的绝缘层的上发光型有机发光二极管的发射光线为红色与蓝色强度较强(参照曲线C331),然而,具有依序由0.1微米厚度的SiO、1.9微米厚度的SiN、0.1微米厚度的SiO、1.9微米厚度的SiN所堆叠而成的复合绝缘层的上发光型有机发光二极管的发射光线为绿色较强(参照曲线C332)。 [0054] Next, may be known from Figure 4C, the only light emission on the light emitting type organic light emitting diode of SiN 4 micron thick insulating layer is strong red and blue intensity (reference curve C331), however, by having sequence of SiO 0.1 micron thickness, 1.9 micron thick SiN, SiO 0.1 micron thickness, 1.9 micron thick SiN stacked composite insulating layer formed on the light emitting type organic light emitting diode for emitting a strong green (reference curve C332). 因此,由图4A〜图4C可以得知,可以通过设计复合绝缘层的反射率、穿透率与吸收率来调整发射光线的颜色。 Thus, it 4A~ be seen from FIG. 4C, the color of the light emitted can be adjusted by the design of the composite insulating layer, the reflectance, transmittance and absorbance. 除此之外,由图4C还可以得知,复合绝缘层具较低的波长选择性,因此本发明实施例的有机发光二极管可以设计为白色光有机发光二极管。 In addition, it is also known from 4C, the composite insulating layer having a low wavelength selectivity, the present invention is thus the organic light emitting diode according to an embodiment may be designed as a white light OLED.

[0055] 请参照图5A,曲线C411与C412表示具有不同复合绝缘层的上发光型有机发光二极管的上层电极的反射率与波长的曲线,其中曲线C411所对应的复合绝缘层依序由0.005微米厚度的Si0、0.45微米厚度的SiN与0.1微米厚度的SiON所堆叠而成,而曲线C412所对应的复合绝缘层依序由0.075微米厚度的MgF2、0.005微米厚度的Si0、0.45微米厚度的SiN与0.1微米厚度的SiON所堆叠而成。 [0055] Referring to Figure 5A, the curve C411 and C412 represents the reflectivity curve of the upper electrode emission type organic light emitting diode having a different wavelength and a composite insulating layer, wherein a composite curve C411 corresponding to the insulating layer in order, a 0.005 m SiN Si0,0.45 micron thick SiN Si0,0.45 micron thickness and the thickness of SiON 0.1 micron thickness of the stacking, and the curve C412 corresponding to the composite insulating layer in order, a thickness of 0.075 micron and micron thickness MgF2,0.005 SiON 0.1 micron thickness of the stacking. 由曲线C411与C412可知,可以通过设计复合绝缘层,来调整上发光型有机发光二极管的上层电极的反射率与波长之间的关系。 C411 and C412 can be seen from the graph, the insulating layer may be a composite design, to adjust the relationship between the upper electrode reflectivity versus wavelength of emission type organic light emitting diode.

[0056] 请参照图5B,曲线C421与C422表示具有不同复合绝缘层的上发光型有机发光二极管的发射光线的强度与波长的曲线,其中曲线C421所对应的复合绝缘层依序由0.005微米厚度的Si0、0.45微米厚度的SiN与0.1微米厚度的SiON所堆叠而成,而曲线C422所对应的复合绝缘层依序由0.075微米厚度的MgF2、0.005微米厚度的Si0、0.45微米厚度的SiN与0.1微米厚度的SiON所堆叠而成。 [0056] Referring to Figure 5B, graph curves C421 and C422 represent the intensity of the light emitted from the wavelength emission type organic light emitting diodes having different composite insulating layer, wherein a composite curve C421 corresponding to the insulating layer in order, a thickness of 0.005 m micron thick SiN Si0,0.45 Si0,0.45 micron thickness of SiN with the thickness of the SiON 0.1 micron stacking, and the curve C422 corresponding to the composite insulating layer in order, a thickness of 0.075 micron and 0.1 micron thickness MgF2,0.005 SiON micron thickness of the stacking.

[0057] 接着,由图5B可以得知,具有依序由0.005微米厚度的SiO、0.45微米厚度的SiN与0.1微米厚度的SiON所堆叠而成的复合绝缘层的上发光型有机发光二极管的发射光线的主要波段约在460纳米(参照曲线C421 ),然而,具有依序由0.075微米厚度的MgF2、0.005微米厚度的SiO、0.45微米厚度的SiN与0.1微米厚度的SiON所堆叠而成所堆叠而成的复合绝缘层的上发光型有机发光二极管的发射光线的主要波段约在450纳米(参照曲线C422)。 Transmitting [0057] Next, may be known from 5B, the insulating layer in order, a compound having a SiO 0.005 microns thick, SiN 0.45 micron thickness and SiON 0.1 micron thickness formed on the stacked emission type organic light emitting diode the main band of light at about 460 nm (reference curve C421,), however, a sequence having a thickness of 0.075 micron SiO MgF2,0.005 micron thickness, SiN 0.45 micron thickness and SiON 0.1 micron thickness formed by stacking the stacked the main band of the light emitted from the emission type organic light emitting diode into a composite insulating layer of about 450 nm (see curve C422). 因此,由图4C可以得知,可以通过设计复合绝缘层的反射率、穿透率与吸收率来调整发射光线的颜色,以使得原来偏蓝色的发射光线更偏向蓝色。 Therefore, according to the Figure 4C, the color of the light emitted can be adjusted by the design of the composite insulating layer reflectivity, transmissivity and absorption rate, so that the original bluish prefer blue light emission.

[0058] 另外,上述各实施例的有机发光二极管可以作为电子装置的显示面板。 [0058] Further, each of the above embodiments of the organic light emitting diode can be used as a display panel of an electronic device. 电子装置例如为具有显示面板与控制电路的显示装置,其中显示装置的显示面板可以由多个有机发光二极管所组成;或者,电子装置例如为具有驱动电路与照明光源的照明装置,其中照明装置的照明光源可以由多个有机发光二极管所组成。 Electronic devices such as a display device having a display panel and a control circuit, wherein the display panel by the apparatus may be composed of a plurality of organic light emitting diodes; or, for example, an electronic device having an illumination device wherein a lighting device driving circuit and the illumination light source, the an illumination light source may be comprised of a plurality of organic light emitting diodes. 简单地说,本发明实施例还提供一种电子装置,所述电子装置包括由至少一有机发光二极管所组成的显示面板与其他的功能组件,其中功能组件依据电子装置的类型而例如为薄膜晶体管阵列、驱动电路或控制电路等,薄膜晶体管阵列与有机发光二极管面板相对设置,且控制电路与有机发光二极管面板及薄膜晶体管阵列电性连接。 Briefly, embodiments of the present invention further provides an electronic device, said electronic device comprising a display panel composed of at least one organic light emitting diode composed of the other functional components, wherein the functional components of the electronic device depending on the type of the thin film transistor, for example, array, a control circuit or a driving circuit, a thin film transistor array panel of the organic light emitting diode disposed opposite, and the control circuit and the organic light emitting diode panel and electrically connected to the thin film transistor array.

[0059] 综合以上所述,本发明实施例提供一种工艺简单、制造成本较低且可以通过设计其复合绝缘层的反射率、穿透率与吸收率来调整发射光线的颜色的有机发光二极管面板。 [0059] The synthesis of the above embodiments provide a simple process, low manufacturing cost, and color of the light emitted can be adjusted by designing the reflectance of the composite insulating layer, transmittance and absorptance of the present invention, the organic light emitting diode panel. 除此之外,所述有机发光二极管面板可以设计为白色光有机发光二极管面板。 In addition, the organic light emitting diode panel may be designed as a white light OLED panel.

[0060] 以上所述仅为本发明的实施例,其并非用以限定本发明的专利保护范围。 [0060] The embodiments described above are only embodiments of the present invention, which do not limit the scope of the present patent disclosure. 任何本领域的普通技术人员,在不脱离本发明的精神与范围内,所作的更动及润饰的等效替换,仍为本发明的专利保护范围内。 Any one of ordinary skill in the art, without departing from the spirit and scope of the present invention, the modifier made and equivalents retouching, still within the scope of protection of the present invention.

Claims (18)

  1. 1.一种有机发光二极管面板,其特征在于,所述有机发光二极管面板包括: 基板; 阳极,位于所述基板的上面; 复合发光层,位于所述阳极的上面; 阴极,位于所述复合发光层的上面;以及至少一复合绝缘层,具有至少两层绝缘层,其中所述绝缘层具有不同的折射系数,且其中所述复合绝缘层位于所述阴极上面及介于所述基板与所述阳极之间的至少之一。 An organic light emitting diode panel, wherein the organic light emitting diode panel comprises: a substrate; an anode, positioned above the substrate; a light-emitting composite layer, located above the anode; a cathode, positioned in the light-emitting compound upper layer; and at least one composite insulating layer, an insulating layer having at least two layers, wherein the insulating layer has a different refractive index, and wherein said composite insulating layer is interposed between the cathode and the top of the substrate and between at least one anode.
  2. 2.根据权利要求1所述的有机发光二极管面板,其特征在于,所述复合绝缘层的吸收率低于10%。 The organic light emitting diode panel as claimed in claim 1, characterized in that said composite insulating layer absorbing less than 10%.
  3. 3.根据权利要求1所述的有机发光二极管面板,其特征在于,所述绝缘层的折射系数介于1.4至2.6之间。 According to claim OLED panel of claim 1, wherein said insulating layer is between a refractive index of 1.4 to 2.6.
  4. 4.根据权利要求1所述的有机发光二极管面板,其特征在于,所述复合绝缘层位于所述阴极上面的紧邻所述阴极的所述绝缘层的折射系数相较于次紧邻所述阴极的所述绝缘层的折射系数低。 The organic light emitting diode panel according to claim 1, characterized in that the cathode of the cathode immediately above the insulating layer of the complex refractive index of the insulating layer positioned proximate times compared to the cathode the low refractive index insulating layer.
  5. 5.根据权利要求1所述的有机发光二极管面板,其特征在于,所述复合绝缘层介于所述基板与所述阳极之间的紧邻所述阳极的所述绝缘层的折射系数相较于次紧邻所述阳极的所述绝缘层的折射系数低。 According to claim OLED panel of claim 1, wherein the refractive index of the composite insulating layer interposed between the substrate and proximate to the anode of the anode compared to the insulating layer times proximate the anode of the low refractive index insulating layer.
  6. 6.根据权利要求1所述的有机发光二极管面板,其特征在于,所述复合绝缘层的厚度介于3至10微米之间。 According to claim OLED panel of claim 1, wherein said composite insulating layer has a thickness between 3 and 10 microns.
  7. 7.根据权利要求1所述的有机发光二极管面板,其特征在于,所述有机发光二极管面板为上发光型有机二极管面板,所述阳极为反射阳极,所述阴极为半透明阴极,且所述复合绝缘层位于所述阴极的上面。 According to claim OLED panel of claim 1, wherein the organic light emitting diode panel of the organic light emitting diode panel, the anode is a reflection anode, the cathode is a translucent cathode, and the located above the insulating layer of the composite cathode.
  8. 8.根据权利要求1所述的有机发光二极管面板,其特征在于,所述有机发光二极管面板为下发光型有机二极管面板,所述阳极为透明阳极,所述阴极为非透明阴极,所述复合绝缘层位于所述基板与所述阳极之间,且所述有机发光二极管还包括位于所述阴极上面的钝化保护层。 According to claim OLED panel of claim 1, wherein the organic light emitting diode panel of the organic light emitting diode panel, the anode is a transparent anode, the cathode is non-transparent cathode, said composite an insulating layer positioned between the substrate and the anode, and the organic light emitting diode of the cathode further comprises a top passivation layer.
  9. 9.根据权利要求1所述的有机发光二极管面板,其特征在于,所述有机发光二极管面板为穿透型有机二极管面板,所述阳极为透明阳极,所述阴极为半透明阴极,且所述复合绝缘层的其中之一位于所述阴极的上面,且所述复合绝缘层的另一层位于所述基板与所述阳极之间。 According to claim OLED panel of claim 1, wherein the organic light emitting diode panel transmission type organic LED panel, the anode is a transparent anode, the cathode is a translucent cathode, and the one composite insulating layer is located above the cathode, and the other layer the composite insulating layer positioned between the substrate and the anode.
  10. 10.根据权利要求1所述的有机发光二极管面板,其特征在于,所述绝缘层的材料为SiNx,SiOx,SiON,MgF2,N, N' - 二苯基-N,N' - (1-萘基)-1, I' -联苯-4,4' - 二胺或8-羟基喹啉铝。 10. The organic light emitting diode according to claim panel of claim 1, wherein said insulating material is a layer of SiNx, SiOx, SiON, MgF2, N, N '- diphenyl -N, N' - (1- naphthyl) -1, I '- biphenyl-4,4' - diamine, or 8-hydroxyquinoline aluminum.
  11. 11.根据权利要求1所述的有机发光二极管面板,其特征在于,所述绝缘层的材料为A1F3、AlOxNy' BaF2' BeO、Bi2O3' BiF3' CaF2' CdSe、CdS、CdTe、CeF3' CeO2, Cs1、Gd2O3' HfO2, HoF3 >Ho2O3> ln203、LaF3> La2O3> LiF、MgO> NaF> Na3AlF6、Na5Al3F14^ Nb2O5> NdF3> Nd203、PbCl2、PbF2>PbTe, Pr6O11, Sb2O3, Ta2O5, TeO2, TiN、TiO2, TiCUThF4, V2O5, W03、YF3, Y2O3, YbF3, Yb2O3, ZnO,ZnS、ZnSe 或ZrO20 11. The organic light emitting diode as claimed in claim panel of claim 1, wherein said insulating material is a layer A1F3, AlOxNy 'BaF2' BeO, Bi2O3 'BiF3' CaF2 'CdSe, CdS, CdTe, CeF3' CeO2, Cs1 , Gd2O3 'HfO2, HoF3> Ho2O3> ln203, LaF3> La2O3> LiF, MgO> NaF> Na3AlF6, Na5Al3F14 ^ Nb2O5> NdF3> Nd203, PbCl2, PbF2> PbTe, Pr6O11, Sb2O3, Ta2O5, TeO2, TiN, TiO2, TiCUThF4 , V2O5, W03, YF3, Y2O3, YbF3, Yb2O3, ZnO, ZnS, ZnSe or ZrO20
  12. 12.根据权利要求1所述的有机发光二极管面板,其特征在于,所述有机发光二极管面板为白色有机发光二极管面板。 12. The organic light emitting diode according to claim panel of claim 1, wherein the organic light emitting diode panel as a white organic light emitting diode panel.
  13. 13.一种电子装置,其特征在于,所述电子装置包括: 根据权利要求1所述的有机发光二极管面板; 薄膜晶体管阵列,与所述有机发光二极管面板相对设置;以及控制电路,与所述有机发光二极管面板及所述薄膜晶体管阵列电性连接。 13. An electronic device, wherein, said electronic device comprising: an organic light emitting diode panel as claimed in claim 1; a thin film transistor array, the organic light emitting diode panel disposed opposite; and a control circuit, and the the organic light emitting diode and the thin film transistor array panel is electrically connected.
  14. 14.根据权利要求13所述的电子装置,其特征在于,所述复合绝缘层的吸收率低于10%。 14. The electronic device according to claim 13, characterized in that said composite insulating layer is the absorption rate less than 10%.
  15. 15.根据权利要求13所述的电子装置,其特征在于,所述绝缘层的折射系数介于1.4至2.6之间。 15. The electronic device according to claim 13, wherein said insulating layer is between a refractive index of 1.4 to 2.6.
  16. 16.根据权利要求13所述的电子装置,其特征在于,所述复合绝缘层的厚度介于3至10微米之间。 16. The electronic device of claim 13, wherein said composite insulating layer has a thickness between 3 and 10 microns.
  17. 17.根据权利要求13所述的电子装置,其特征在于,所述复合绝缘层位于所述阴极上面的紧邻所述阴极的所述绝缘层的折射系数相较于次紧邻所述阴极的所述绝缘层的折射系数低。 17. The electronic device according to claim 13, characterized in that said composite insulating layer positioned above the cathode proximate the refractive index of the cathode insulating layer proximate times compared to the cathode low refractive index of the insulating layer.
  18. 18.根据权利要求13所述的电子装置,其特征在于,所述复合绝缘层介于所述基板与所述阳极之间的紧邻所述阳极的所述绝缘层的折射系数相较于次紧邻所述阳极的所述绝缘层的折射系数低。 18. The electronic device according to claim 13, wherein said composite immediately adjacent insulating layer interposed between the anode substrate and the anode of the refractive index as compared to the insulating layer immediately adjacent to the secondary the anode of the low refractive index of the insulating layer.
CN 201210319667 2012-08-31 2012-08-31 Organic light emitting diode panel and electronic device comprising same CN103681729A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105609661A (en) * 2016-03-24 2016-05-25 深圳市华星光电技术有限公司 OLED (Organic Light Emitting Diode) display and display module

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050225232A1 (en) * 2004-04-07 2005-10-13 Eastman Kodak Company Color OLED with added color gamut pixels
US20100156277A1 (en) * 2008-12-22 2010-06-24 Vitex Systems, Inc. Encapsulated rgb oleds having enhanced optical output
CN102576816A (en) * 2009-06-15 2012-07-11 阿斯特朗非凡安全有限公司 Diode and process for making an organic light-emitting diode with a substrate planarisation layer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050225232A1 (en) * 2004-04-07 2005-10-13 Eastman Kodak Company Color OLED with added color gamut pixels
US20100156277A1 (en) * 2008-12-22 2010-06-24 Vitex Systems, Inc. Encapsulated rgb oleds having enhanced optical output
CN102576816A (en) * 2009-06-15 2012-07-11 阿斯特朗非凡安全有限公司 Diode and process for making an organic light-emitting diode with a substrate planarisation layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105609661A (en) * 2016-03-24 2016-05-25 深圳市华星光电技术有限公司 OLED (Organic Light Emitting Diode) display and display module

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