CN103668125A - Substrate table suitable for being used in tubular plasma film deposition device - Google Patents
Substrate table suitable for being used in tubular plasma film deposition device Download PDFInfo
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- CN103668125A CN103668125A CN201310754420.4A CN201310754420A CN103668125A CN 103668125 A CN103668125 A CN 103668125A CN 201310754420 A CN201310754420 A CN 201310754420A CN 103668125 A CN103668125 A CN 103668125A
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- tray deck
- silica tube
- substrate table
- chip bench
- film
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Abstract
The invention relates to a substrate table suitable for being used in a tubular plasma film deposition device. The substrate table comprises four quartz tubes (2) and support frame discs (1), wherein the support frame discs (1) are arranged at the two ends of the quartz tubes (2), the end parts of the four quartz tubes (2) are uniformly arranged at the same circumference at intervals, an air inlet (4) is formed in one support frame disc (1), the other support frame disc (1) is sealed, and a plurality of installing grooves (3) for installing substrates are uniformly formed in the quartz tubes (2). The substrate table has the advantages that the problem of uniformity of gas in a reaction cavity in the film deposition process is solved, and all of substrates in different positions in the cavity can be enabled to be positioned in the identical gas atmosphere, so the film performance consistency of the film performance during the mass production can be ensured, and the mass deposition of films can be carried out.
Description
Technical field
The present invention relates to plasma foil deposition apparatus, more particularly, relate to a kind of chip bench being applicable in tubulose plasma foil deposition apparatus.
Background technology
Plasma enhanced chemical vapor deposition technology is the new technology that development in recent years is got up, aspect the various novel materials of preparation, there is good using value, as diamond thin, diamond like carbon film, CNT (carbon nano-tube) etc., it is current practical a kind of method for manufacturing thin film.
In various plasma enhanced chemical vapor deposition units, tubular reactor cavity is a kind of more common structure, the chip bench using in tubular reactor cavity, must meet following requirement: on the one hand, the existence of chip bench can not have influence on the distribution of reaction cavity applying plasma; On the other hand, chip bench will guarantee that the gas distribution of all substrates region in reaction process is consistent, this is that gas distribution is to prepare in enormous quantities the problem that film must solve uniformly because the distribution of reactant gases has a great impact the growth tool of film in film deposition process.
In tubulose plasma enhanced chemical vapor deposition unit, the research that cavity applying plasma is distributed is also a very important problem, in this research, the location of substrate is a very important link, and the accurate location that how to reach substrate position is also the problem that chip bench must solve.
Summary of the invention
The technical problem to be solved in the present invention is, a kind of chip bench being applicable in tubulose plasma foil deposition apparatus is provided, the substrate that can guarantee different positions in cavity is all in identical atmosphere, thus the consistence of film performance while guaranteeing to produce in enormous quantities.
The technical solution adopted for the present invention to solve the technical problems is: construct a kind of chip bench being applicable in tubulose plasma foil deposition apparatus, comprise four silica tubes and the tray deck that is fixed on described silica tube two ends, the end of four silica tubes is disposed in an evenly spaced relation on same circumference, one of them tray deck is provided with inlet mouth, another tray deck seals, and is evenly provided with the mounting groove of a plurality of mounted substrates on described silica tube.
In such scheme, at least one described silica tube is detachably arranged on described tray deck.
In such scheme, described tray deck and silica tube adopt saturating electromagnetic quartz material to make.
In such scheme, the tray deck and the reaction cavity inlet mouth that are provided with inlet mouth interlock, and reactant gases enters silica tube by tray deck, from described mounting groove, enters reaction cavity.
Implement the chip bench being applicable in tubulose plasma foil deposition apparatus of the present invention, there is following beneficial effect:
1, quartz material has good resistance to elevated temperatures, can guarantee the depositing temperature in film deposition process.On silica tube, be evenly provided with mounting groove, for fixed substrate and to substrate, carry out gas distribution, guarantee the homogeneity of the interior gas distribution of cavity in film deposition process.
2, in the deposition process of film, the inlet end tray deck of chip bench is connected with the inlet mouth of reaction cavity, reactant gases enters silica tube by tray deck, by the mounting groove on silica tube, be incorporated into equably in reaction cavity, assurance is fixed on substrate in mounting groove among identical atmosphere, thereby guarantee that the film of growing on each substrate is consistent, reaches the object of deposit film in enormous quantities.
3, the invention solves the homogeneity question of the interior gas of reaction cavity in film deposition process, the substrate that can guarantee different positions in cavity is all in identical atmosphere, thereby the consistence of film performance while guarantee producing in enormous quantities, can carry out the deposition in enormous quantities of film.
4, chip bench of the present invention can also reach the effect of accurate positioning substrate position, and in the research process that cavity applying plasma is distributed, tool plays a very important role.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing:
Fig. 1 is the structural representation that the present invention is applicable to the chip bench in tubulose plasma foil deposition apparatus.
Embodiment
For technical characterictic of the present invention, object and effect being had more clearly, understand, now contrast accompanying drawing and describe the specific embodiment of the present invention in detail.
As shown in Figure 1, the chip bench that the present invention is applicable in tubulose plasma foil deposition apparatus comprises four silica tubes 2 and the tray deck 1 that is fixed on silica tube 2 two ends.
The end of four silica tubes 2 is disposed in an evenly spaced relation on same circumference, and one of them tray deck 1 is provided with inlet mouth 4, and another tray deck 1 seals, and is evenly provided with the mounting groove 3 of a plurality of mounted substrates on silica tube 2.Quartz material has good resistance to elevated temperatures, can guarantee the depositing temperature in film deposition process.On silica tube 2, be evenly provided with mounting groove 3, for fixed substrate and to substrate, carry out gas distribution, guarantee the homogeneity of the interior gas distribution of cavity in film deposition process.
In the deposition process of film, the inlet end tray deck 1 of chip bench is connected with the inlet mouth 4 of reaction cavity, reactant gases enters silica tube 2 by tray deck 1, mounting groove 3 on silica tube 2 is incorporated in reaction cavity equably, assurance is fixed on substrate in mounting groove 3 among identical atmosphere, thereby guarantee that the film of growing on each substrate is consistent, reaches the object of deposit film in enormous quantities.
Further, at least one silica tube 2 is detachably arranged on tray deck 1, ensures after substrate and substrate placement are placed in enough spaces it is fixed.
Further, tray deck 1 and silica tube 2 adopt saturating electromagnetic quartz material to make, and can guarantee that chip bench can not affect the plasma distribution in cavity.
The invention solves the homogeneity question of the interior gas of reaction cavity in film deposition process, the substrate that can guarantee different positions in cavity is all in identical atmosphere, thereby the consistence of film performance while guarantee producing in enormous quantities, can carry out the deposition in enormous quantities of film.Chip bench of the present invention can also reach the effect of accurate positioning substrate position, and in the research process that cavity applying plasma is distributed, tool plays a very important role.
By reference to the accompanying drawings embodiments of the invention are described above; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; rather than restrictive; those of ordinary skill in the art is under enlightenment of the present invention; not departing from the scope situation that aim of the present invention and claim protect, also can make a lot of forms, within these all belong to protection of the present invention.
Claims (4)
1. the chip bench being applicable in tubulose plasma foil deposition apparatus, it is characterized in that, comprise four silica tubes (2) and be fixed on the tray deck (1) at described silica tube (2) two ends, the end of four silica tubes (2) is disposed in an evenly spaced relation on same circumference, one of them tray deck (1) is provided with inlet mouth (4), another tray deck (1) seals, and is evenly provided with the mounting groove (3) of a plurality of mounted substrates on described silica tube (2).
2. the chip bench being applicable in tubulose plasma foil deposition apparatus according to claim 1, is characterized in that, at least one described silica tube (2) is detachably arranged on described tray deck (1).
3. the chip bench being applicable in tubulose plasma foil deposition apparatus according to claim 1, is characterized in that, described tray deck (1) and silica tube (2) adopt electromagnetic quartz material to make.
4. the chip bench being applicable in tubulose plasma foil deposition apparatus according to claim 1, it is characterized in that, the tray deck (1) that is provided with inlet mouth (4) interlocks with reaction cavity inlet mouth (4), reactant gases enters silica tube (2) by tray deck (1), from described mounting groove (3), enters reaction cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310754420.4A CN103668125A (en) | 2013-12-31 | 2013-12-31 | Substrate table suitable for being used in tubular plasma film deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310754420.4A CN103668125A (en) | 2013-12-31 | 2013-12-31 | Substrate table suitable for being used in tubular plasma film deposition device |
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| Publication Number | Publication Date |
|---|---|
| CN103668125A true CN103668125A (en) | 2014-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310754420.4A Pending CN103668125A (en) | 2013-12-31 | 2013-12-31 | Substrate table suitable for being used in tubular plasma film deposition device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020118873A1 (en) * | 2018-12-13 | 2020-06-18 | 深圳市捷佳伟创新能源装备股份有限公司 | Reaction chamber structure of plasma deposition furnace |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5020476A (en) * | 1990-04-17 | 1991-06-04 | Ds Research, Inc. | Distributed source assembly |
| CN1863939A (en) * | 2003-08-21 | 2006-11-15 | 微米技术有限公司 | Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces |
| CN101120116A (en) * | 2005-02-17 | 2008-02-06 | 斯奈克玛动力部件公司 | Method for the densification of thin porous substrates by means of vapour phase chemical infiltration and device for loading such substrates |
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2013
- 2013-12-31 CN CN201310754420.4A patent/CN103668125A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5020476A (en) * | 1990-04-17 | 1991-06-04 | Ds Research, Inc. | Distributed source assembly |
| CN1863939A (en) * | 2003-08-21 | 2006-11-15 | 微米技术有限公司 | Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces |
| CN101120116A (en) * | 2005-02-17 | 2008-02-06 | 斯奈克玛动力部件公司 | Method for the densification of thin porous substrates by means of vapour phase chemical infiltration and device for loading such substrates |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020118873A1 (en) * | 2018-12-13 | 2020-06-18 | 深圳市捷佳伟创新能源装备股份有限公司 | Reaction chamber structure of plasma deposition furnace |
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Application publication date: 20140326 |