CN103659468A - 一种减少单晶硅晶圆抛光片化学灼伤的有蜡抛光方法 - Google Patents
一种减少单晶硅晶圆抛光片化学灼伤的有蜡抛光方法 Download PDFInfo
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- CN103659468A CN103659468A CN201310667347.7A CN201310667347A CN103659468A CN 103659468 A CN103659468 A CN 103659468A CN 201310667347 A CN201310667347 A CN 201310667347A CN 103659468 A CN103659468 A CN 103659468A
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- Prior art keywords
- polishing
- cleaning
- silicon wafer
- circulation
- mass fraction
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Links
- 238000005498 polishing Methods 0.000 title claims abstract description 181
- 238000000034 method Methods 0.000 title claims abstract description 49
- 208000009043 Chemical Burns Diseases 0.000 title claims abstract description 18
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 100
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 100
- 239000010703 silicon Substances 0.000 claims abstract description 100
- 238000004140 cleaning Methods 0.000 claims abstract description 45
- 238000007517 polishing process Methods 0.000 claims abstract description 27
- 230000008569 process Effects 0.000 claims abstract description 22
- 239000012530 fluid Substances 0.000 claims description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- 241000239290 Araneae Species 0.000 claims description 14
- 208000018380 Chemical injury Diseases 0.000 claims description 14
- 239000008187 granular material Substances 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 7
- 238000005201 scrubbing Methods 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 238000011017 operating method Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 abstract description 10
- 239000000126 substance Substances 0.000 abstract description 8
- 238000006386 neutralization reaction Methods 0.000 abstract 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 45
- 239000000243 solution Substances 0.000 description 20
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 12
- 239000000919 ceramic Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000004813 Perfluoroalkoxy alkane Substances 0.000 description 3
- SCKXCAADGDQQCS-UHFFFAOYSA-N Performic acid Chemical compound OOC=O SCKXCAADGDQQCS-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310667347.7A CN103659468B (zh) | 2013-12-09 | 2013-12-09 | 一种减少单晶硅晶圆抛光片化学灼伤的有蜡抛光方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310667347.7A CN103659468B (zh) | 2013-12-09 | 2013-12-09 | 一种减少单晶硅晶圆抛光片化学灼伤的有蜡抛光方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103659468A true CN103659468A (zh) | 2014-03-26 |
CN103659468B CN103659468B (zh) | 2016-06-29 |
Family
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CN201310667347.7A Active CN103659468B (zh) | 2013-12-09 | 2013-12-09 | 一种减少单晶硅晶圆抛光片化学灼伤的有蜡抛光方法 |
Country Status (1)
Country | Link |
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CN (1) | CN103659468B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108885982A (zh) * | 2016-02-03 | 2018-11-23 | 胜高股份有限公司 | 硅晶圆的单面抛光方法 |
CN113319652A (zh) * | 2021-03-08 | 2021-08-31 | 中环领先半导体材料有限公司 | 一种改善单抛机抛后硅片塌边的抛光工艺 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05177536A (ja) * | 1991-10-30 | 1993-07-20 | Sumitomo Electric Ind Ltd | CdTeウェハーの鏡面研磨方法 |
JPH0885051A (ja) * | 1994-09-14 | 1996-04-02 | Komatsu Electron Metals Co Ltd | 半導体シリコン基板の面取り部研磨方法 |
JP2008068390A (ja) * | 2006-09-15 | 2008-03-27 | Noritake Co Ltd | 結晶材料の研磨加工方法 |
CN101352829A (zh) * | 2007-07-24 | 2009-01-28 | 上海光炜电子材料有限公司 | 一种低粗糙度硅抛光片的加工方法 |
CN103009234A (zh) * | 2012-12-12 | 2013-04-03 | 天津中环领先材料技术有限公司 | 一种改善表面颗粒的重掺砷单晶硅晶圆抛光片的抛光工艺 |
CN103029026A (zh) * | 2012-12-13 | 2013-04-10 | 天津中环领先材料技术有限公司 | 一种超高清洗能力的单晶硅晶圆片清洗方法 |
CN103072073A (zh) * | 2012-12-13 | 2013-05-01 | 天津中环领先材料技术有限公司 | 一种保持硅晶圆抛光片少数载流子高寿命的抛光工艺 |
-
2013
- 2013-12-09 CN CN201310667347.7A patent/CN103659468B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05177536A (ja) * | 1991-10-30 | 1993-07-20 | Sumitomo Electric Ind Ltd | CdTeウェハーの鏡面研磨方法 |
JPH0885051A (ja) * | 1994-09-14 | 1996-04-02 | Komatsu Electron Metals Co Ltd | 半導体シリコン基板の面取り部研磨方法 |
JP2008068390A (ja) * | 2006-09-15 | 2008-03-27 | Noritake Co Ltd | 結晶材料の研磨加工方法 |
CN101352829A (zh) * | 2007-07-24 | 2009-01-28 | 上海光炜电子材料有限公司 | 一种低粗糙度硅抛光片的加工方法 |
CN103009234A (zh) * | 2012-12-12 | 2013-04-03 | 天津中环领先材料技术有限公司 | 一种改善表面颗粒的重掺砷单晶硅晶圆抛光片的抛光工艺 |
CN103029026A (zh) * | 2012-12-13 | 2013-04-10 | 天津中环领先材料技术有限公司 | 一种超高清洗能力的单晶硅晶圆片清洗方法 |
CN103072073A (zh) * | 2012-12-13 | 2013-05-01 | 天津中环领先材料技术有限公司 | 一种保持硅晶圆抛光片少数载流子高寿命的抛光工艺 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108885982A (zh) * | 2016-02-03 | 2018-11-23 | 胜高股份有限公司 | 硅晶圆的单面抛光方法 |
CN108885982B (zh) * | 2016-02-03 | 2022-11-22 | 胜高股份有限公司 | 硅晶圆的单面抛光方法 |
CN113319652A (zh) * | 2021-03-08 | 2021-08-31 | 中环领先半导体材料有限公司 | 一种改善单抛机抛后硅片塌边的抛光工艺 |
Also Published As
Publication number | Publication date |
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CN103659468B (zh) | 2016-06-29 |
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Effective date of registration: 20191226 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring road No. 12 in Haitai) Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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