CN103618040B - 一种白光二极管 - Google Patents

一种白光二极管 Download PDF

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CN103618040B
CN103618040B CN201310594665.5A CN201310594665A CN103618040B CN 103618040 B CN103618040 B CN 103618040B CN 201310594665 A CN201310594665 A CN 201310594665A CN 103618040 B CN103618040 B CN 103618040B
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CN103618040A (zh
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林英强
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Jiangsu Jinyue Holding Group Co.,Ltd.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)

Abstract

本发明公开了一种白光二极管，包括基座和发光晶粒，基座呈长条形，基座的边缘设置有向上延伸的凸起，凸起围合成凹槽，凹槽底部覆有第一铜片和第二铜片，第一铜片、第二铜片穿过凸起在基座底部延伸分别构成与外部直流电源连接的正、负电极，基座在其长度方向上固定有通过铜丝串联的3个发光晶粒，发光晶粒串联后的两端分别与第一铜片、第二铜片电连接从而构成串联回路，凹槽内设置有覆盖发光晶粒的第一荧光层，第一荧光层顶部设置有至少能完全覆盖3个发光晶粒的第二荧光层，凹槽内还设置有覆盖第一荧光层和第一荧光层的保护层。本发明的白光二极管散热性好、工作稳定、使用寿命长。

Description

一种白光二极管
技术领域
本发明涉及一种二极管，尤其涉及一种发白光的二极管。
背景技术
发光二极管简称为LED。由镓与砷、磷的化合物制成的二极管，当电子与空穴复合时能辐射出可见光，因而可以用来制成发光二极管。在电路及仪器中作为指示灯，或者组成文字或数字显示。磷砷化镓二极管发红光，磷化镓二极管发绿光，碳化硅二极管发黄光。近年来，还开发出了能发白光的二极管，可以取代一般的钨丝灯泡或日光管作为照明光源。然而由于现有技术中的白光二极管工作时结温比较集中，对导热及散性能要求比较高，产品稳定性差。
发明内容
本发明旨在解决上述所提及的技术问题，提供一种散热良好的白光二极管。
本发明是通过以下的技术方案实现的：
一种白光二极管，包括基座和发光晶粒，所述基座呈长条形，所述基座的边缘设置有向上延伸的凸起，所述凸起围合成凹槽，所述凹槽底部覆有第一铜片和第二铜片，所述第一铜片、第二铜片穿过凸起在基座底部延伸分别构成与外部直流电源连接的正、负电极，所述基座在其长度方向上固定有通过铜丝串联的3个发光晶粒，所述发光晶粒串联后的两端分别与第一铜片、第二铜片电连接从而构成串联回路，所述凹槽内设置有覆盖所述发光晶粒的第一荧光层，所述第一荧光层顶部设置有至少能完全覆盖所述3个发光晶粒的第二荧光层，所述凹槽内还设置有覆盖第一荧光层和第一荧光层的保护层。
进一步，所述发光晶粒与第一铜片和/或第二铜片直接相接触。
进一步，所述第二荧光层为中间较厚而朝周缘逐渐较薄的形状。
进一步，所述发光晶粒发出的光为蓝光或紫外光。
进一步，所述第二荧光层所含荧光粉的浓度大于第一荧光层所含的荧光粉的浓度。
进一步，所述第一铜片、第二铜片穿过凸起后往基座的底部延伸。
本发明的有益效果是：通过将发光晶粒设置在第一铜片和/或第二铜片上，并通过增大发光晶粒所在的第一铜片和/或第二铜片的面积，使发光晶粒发出的热量能快速地传递到白光二极管的外部，从而提高白光二极管的稳定性以及延长白光二极管的使用寿命。
附图说明
以下结合附图对本发明的具体实施方式作进一步的详细说明，其中：
图1为本发明的白光二极管的剖面示意图。
具体实施方式
如图1所示的白光二极管1，包括长条形基座2和发光晶粒5，基座2的边缘设置有向上延伸的凸起20，凸起20沿长条形基座2的边缘围合成凹槽21，凹槽21的截面呈倒梯形结构，凹槽21底部覆有第一铜片3、第二铜片4，第一铜片3、第二铜片4穿过凸起20的底部并在基座2的底部延伸分别构成与外部直流电源连接的正、负电极，基座2在其长度方向上设置有3个发光晶粒5，通过使用铜丝6将3个发光晶粒5以及第一铜片3、第二铜片4串接并实现电连接，从而构成串联回路。3个发光晶粒5的底部直接与第二铜片4相接触，以将发光晶粒5发出的热量往白光二极管1的外部进行传递。当然，也可以将3个发光晶粒5的底部设置在第一铜片3上；或将一部分发光晶粒5设置在第一铜片3上，其余的设置在第二铜片4上。因此第一铜片3、第二铜片4除起构成与外部直流电源连接的正、负电极外，还能将3个发光晶粒5发出的热量向白光二极管1外部进行传递的作用。
由于铜丝6较为脆弱，将铜丝6与3个发光晶体、第一铜片3、第二铜片4焊接后，使用混合有荧光粉的胶水将上述器件固封起来，从而构成第一荧光层7，第一荧光层7的顶部设置有第二荧光层8，第二荧光层8的投影面积完全覆盖3个发光晶粒5所在的区域，第二荧光层8的形状为中间较厚而朝周缘逐渐较薄，且其所含荧光粉的浓度大于第一荧光层7所含的荧光粉的浓度，使正向与侧向的光色均匀性更好。凹槽21内还设置有覆盖第一荧光层7和第一荧光层7的保护层9，用于防止空气与第一荧光层7、第二荧光层8接触而产生氧化而变质，材质选用硅胶。
发光晶粒5发出的光可以为蓝光或紫外光。发光晶粒5为发蓝光时，第一荧光层7、第二荧光层8内需配之以发黄光的荧光粉，以使白光二极管1发出的光为白光；采用可发出波长介于300nm-400nm之间的紫外光的发光晶粒5时，第一荧光层7、第二荧光层8内需配之以可发出波长介于590nm-650nm红光、可发出波长介于500nm-530nm绿光以及可发出波长介于440nm-480nm蓝光的荧光粉体混合物，使白光二极管1发出的光为白光。此外，3个发光晶粒5还可以选用红、绿、蓝全彩发光晶粒5各一个，通过3个基本色的光的混合产生白光。
以上实施例仅用以说明本发明的技术方案而并非对其进行限制，凡未脱离本发明精神和范围的任何修改或者等同替换，其均应涵盖在本发明技术方案的范围内。

Claims (4)

1.一种白光二极管，包括基座和发光晶粒，其特征在于：所述基座呈长条形，所述基座的边缘设置有向上延伸的凸起，所述凸起围合成凹槽，所述凹槽底部覆有第一铜片和第二铜片，所述第一铜片、第二铜片穿过凸起在基座底部延伸分别构成与外部直流电源连接的正、负电极，所述基座在其长度方向上固定有通过铜丝串联的3个发光晶粒，所述3个发光晶粒分别为红、绿、蓝全彩发光晶粒，所述发光晶粒串联后的两端分别与第一铜片、第二铜片电连接从而构成串联回路，所述凹槽内设置有覆盖所述发光晶粒的第一荧光层，所述第一荧光层顶部设置有至少能完全覆盖所述3个发光晶粒的第二荧光层，所述凹槽内还设置有覆盖第一荧光层和第二荧光层的保护层。
2.根据权利要求1所述的一种白光二极管，其特征在于：所述发光晶粒与第一铜片和/或第二铜片直接相接触。
3.根据权利要求1所述的一种白光二极管，其特征在于：所述第二荧光层为中间较厚而朝周缘逐渐较薄的形状。
4.根据权利要求1所述的一种白光二极管，其特征在于：所述第二荧光层所含荧光粉的浓度大于第一荧光层所含的荧光粉的浓度。
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CN105702833B (zh) * 2016-03-30 2019-03-05 开发晶照明（厦门）有限公司 Led封装结构和led发光装置
CN106356442A (zh) * 2016-11-21 2017-01-25 莆田莆阳照明有限公司 一种led倒装晶片的全周光led灯
CN107401698A (zh) * 2017-08-29 2017-11-28 江门秦王智能科技有限公司 弱蓝光空气净化台灯
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CN201893378U (zh) * 2010-11-28 2011-07-06 晶诚（郑州）科技有限公司 一种led散热封装结构
CN202487646U (zh) * 2011-12-08 2012-10-10 峻泓光电（苏州）有限公司 一种具有高演色性的白光发光二极管

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TWI262608B (en) * 2004-12-08 2006-09-21 Univ Nat Central Light emitting device

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CN201893378U (zh) * 2010-11-28 2011-07-06 晶诚（郑州）科技有限公司 一种led散热封装结构
CN202487646U (zh) * 2011-12-08 2012-10-10 峻泓光电（苏州）有限公司 一种具有高演色性的白光发光二极管

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Application publication date: 20140305

Assignee: Xiangshui Huachen Cultural and Sports Industry Development Co.,Ltd.

Assignor: Jiangsu Jinyue Holding Group Co.,Ltd.

Contract record no.: X2025980042955

Denomination of invention: A white light emitting diode

Granted publication date: 20160413

License type: Common License

Record date: 20251210

PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: A white light emitting diode

Granted publication date: 20160413

Pledgee: China Construction Bank Corporation Xiangshui sub branch

Pledgor: Jiangsu Jinyue Holding Group Co.,Ltd.

Registration number: Y2025980066693