CN103556219A - 一种碳化硅外延生长装置 - Google Patents
一种碳化硅外延生长装置 Download PDFInfo
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- CN103556219A CN103556219A CN201310529179.5A CN201310529179A CN103556219A CN 103556219 A CN103556219 A CN 103556219A CN 201310529179 A CN201310529179 A CN 201310529179A CN 103556219 A CN103556219 A CN 103556219A
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CN201310529179.5A CN103556219B (zh) | 2013-10-31 | 2013-10-31 | 一种碳化硅外延生长装置 |
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CN103556219A true CN103556219A (zh) | 2014-02-05 |
CN103556219B CN103556219B (zh) | 2016-04-20 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105256369A (zh) * | 2015-10-20 | 2016-01-20 | 中国电子科技集团公司第四十八研究所 | 一种用于SiC外延的耐高温水平多层进气装置 |
CN105702561A (zh) * | 2014-12-12 | 2016-06-22 | 韩国东海炭素株式会社 | 半导体处理组件再生方法 |
CN105714380A (zh) * | 2016-04-26 | 2016-06-29 | 北京世纪金光半导体有限公司 | 一种碳化硅外延生长装置及方法 |
CN107109711A (zh) * | 2015-01-06 | 2017-08-29 | 帕德博恩大学 | 用于产生碳化硅的装置和方法 |
CN115613139A (zh) * | 2022-12-01 | 2023-01-17 | 浙江晶越半导体有限公司 | 用于外延生长碳化硅薄膜的化学气相沉积反应器及方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101401202A (zh) * | 2006-03-17 | 2009-04-01 | 应用材料股份有限公司 | 选择性沉积 |
CN102082084A (zh) * | 2009-11-26 | 2011-06-01 | 中芯国际集成电路制造(上海)有限公司 | 利用选择性外延工艺形成外延层的方法 |
CN102301043A (zh) * | 2009-01-30 | 2011-12-28 | 新日本制铁株式会社 | 外延碳化硅单晶基板及其制造方法 |
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2013
- 2013-10-31 CN CN201310529179.5A patent/CN103556219B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101401202A (zh) * | 2006-03-17 | 2009-04-01 | 应用材料股份有限公司 | 选择性沉积 |
CN102301043A (zh) * | 2009-01-30 | 2011-12-28 | 新日本制铁株式会社 | 外延碳化硅单晶基板及其制造方法 |
CN102082084A (zh) * | 2009-11-26 | 2011-06-01 | 中芯国际集成电路制造(上海)有限公司 | 利用选择性外延工艺形成外延层的方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105702561A (zh) * | 2014-12-12 | 2016-06-22 | 韩国东海炭素株式会社 | 半导体处理组件再生方法 |
US9956589B2 (en) | 2014-12-12 | 2018-05-01 | Tokai Carbon Korea Co., Ltd | Method for repairing semiconductor processing components |
CN107109711A (zh) * | 2015-01-06 | 2017-08-29 | 帕德博恩大学 | 用于产生碳化硅的装置和方法 |
CN105256369A (zh) * | 2015-10-20 | 2016-01-20 | 中国电子科技集团公司第四十八研究所 | 一种用于SiC外延的耐高温水平多层进气装置 |
CN105714380A (zh) * | 2016-04-26 | 2016-06-29 | 北京世纪金光半导体有限公司 | 一种碳化硅外延生长装置及方法 |
CN115613139A (zh) * | 2022-12-01 | 2023-01-17 | 浙江晶越半导体有限公司 | 用于外延生长碳化硅薄膜的化学气相沉积反应器及方法 |
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Address after: 100031 Xicheng District West Chang'an Avenue, No. 86, Beijing Co-patentee after: GLOBAL ENERGY INTERCONNECTION Research Institute Patentee after: State Grid Corporation of China Address before: 100031 Xicheng District West Chang'an Avenue, No. 86, Beijing Co-patentee before: STATE GRID SMART GRID Research Institute Patentee before: State Grid Corporation of China |
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Effective date of registration: 20171027 Address after: 102211 Beijing city Changping District future science and Technology City Binhe Road No. 18 Co-patentee after: State Grid Corporation of China Patentee after: GLOBAL ENERGY INTERCONNECTION Research Institute Co-patentee after: STATE GRID ZHEJIANG ELECTRIC POWER Co. Address before: 100031 Xicheng District West Chang'an Avenue, No. 86, Beijing Co-patentee before: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Patentee before: State Grid Corporation of China |
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