CN103545404A - Quantum dot stacking structure and manufacturing method thereof and light emitting component - Google Patents
Quantum dot stacking structure and manufacturing method thereof and light emitting component Download PDFInfo
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- CN103545404A CN103545404A CN201210236398.XA CN201210236398A CN103545404A CN 103545404 A CN103545404 A CN 103545404A CN 201210236398 A CN201210236398 A CN 201210236398A CN 103545404 A CN103545404 A CN 103545404A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Abstract
The invention relates to a quantum dot stacking structure and a manufacturing method thereof and a light emitting component. The quantum dot stacking structure comprises a substrate layer, at least one quantum dot layer and at least one spacer layer. The quantum dot layers are arranged on the substrate layer. The spacer layers are adjacent to the upper surfaces or the lower surfaces of the quantum dot layers and contain macromolecule silica oxygen compound. Thus, the quantum dot layers are uniform in thickness, and the spacer layers can protect the quantum dot layers.
Description
Technical field
The present invention relates to a kind of stacked structure and manufacture method thereof and light-emitting component, particularly a kind of quantum dot stacked structure and manufacture method thereof and the light-emitting component that comprises this quantum dot stacked structure.
Background technology
The execution mode of white light LEDs is that blue-ray LED adds yellow YAG fluorescent material at present, and its shortcoming is shortcoming red spectral band, the not nature of comparing with white light.In addition,, if use nano-scale fluorescent material, the size that its shortcoming is particle diameter is wayward, higher as the rare earth element price of activator, and is difficult for configuring the white light source that colour temperature is lower.Aspect manufacture method, the coating of conventional fluorescent powder is divided into the type of applying coating (Conformal Distribution) and the large class of contactless fluorescent material (Remote Phosphor) two, its shortcoming causes the thicker part of fluorescent material thickness to produce more gold-tinted for easily spraying inequality, therefore colour temperature is lower, colour temperature is higher to compare less part, and these two kinds of modes are oxidized by aqueous vapor deliquescence all easily.
Because current white light LEDs has color rendering index (CRI) problem on the low side, and quantum dot fluorescence powder has the characteristic of high-luminous-efficiency and high color rendering index, therefore just has the trend that quantum dot fluorescence powder is applied to white light LEDs.But because quantum dot fluorescence powder easily produces autohemagglutination phenomenon in coating process, cause uneven thickness and cause light conversion efficiency variation, therefore, how quantum dot fluorescence powder is evenly coated with, making its even thickness is just a large problem.
Summary of the invention
The invention provides a kind of quantum dot stacked structure, it comprises a substrate layer, at least one quantum dot layer and at least one wall.This at least one quantum dot layer has a upper surface and a lower surface, and is positioned at this substrate layer top.This at least one wall is adjacent to upper surface or the lower surface of this at least one quantum dot layer, and wherein this at least one wall comprises macromolecule silicon oxide compound.
The present invention separately provides a kind of light-emitting component, and it comprises a light source and a quantum dot stacked structure.This light source is in order to provide light.This quantum dot stacked structure comprises a substrate layer, at least one quantum dot layer and at least one wall.This substrate layer is light-permeable material and has a first surface and a second surface, and this second surface is in the face of this light source.This at least one quantum dot layer has a upper surface and a lower surface, and is positioned at the first surface top of this substrate layer.This at least one wall is light-permeable material and upper surface or the lower surface that is adjacent to this at least one quantum dot layer, and wherein this at least one wall comprises macromolecule silicon oxide compound.
The present invention separately provides a kind of manufacture method of quantum dot stacked structure, and it comprises the following steps: a substrate layer a) is provided; B) with spraying method, form one first quantum dot layer, wherein this first quantum dot layer is adjacent to this substrate layer; And c) form one first wall on this first quantum dot layer, wherein this first wall comprises macromolecule silicon oxide compound.
Thus, can reduce the autohemagglutination phenomenon of this first quantum dot layer in forming process, and can evenly be attached on any material, and can make the thickness of this first quantum dot layer comparatively even, effectively to promote light conversion efficiency.In addition, this first wall can prevent that aqueous vapor from entering in this first quantum dot layer and produce oxidation.
Accompanying drawing explanation
Fig. 1 to Fig. 7 shows the schematic diagram of an embodiment of the manufacture method of quantum dot stacked structure of the present invention;
Fig. 8 shows the cross-sectional schematic of another embodiment of quantum dot stacked structure of the present invention; And
Fig. 9 shows the cross-sectional schematic of an embodiment of light-emitting component of the present invention.
[main element symbol description]
One embodiment of 1 quantum dot stacked structure of the present invention
Another embodiment of 1a quantum dot stacked structure of the present invention
One embodiment of 2 light-emitting components of the present invention
10 substrate layers
12 end walls
14 first quantum dot layers
16 first walls
18 second quantum dot layers
20 second walls
22 the 3rd quantum dot layers
24 the 3rd walls
26 reflector
28 light sources
30 first nozzles
32 second nozzles
34 the 3rd nozzles
The first surface of 101 substrate layers
The second surface of 102 substrate layers.
Embodiment
Referring to figs. 1 to Fig. 7, show the schematic diagram of an embodiment of the manufacture method of quantum dot stacked structure of the present invention.With reference to figure 1, provide a substrate layer 10.This substrate layer 10 is light-permeable material, and in the present embodiment, this substrate layer 10 is glass; Yet in other embodiments, this substrate layer 10 can be also plastic cement or other flexible materials.Then, form an end wall 12 on this substrate layer 10.This end wall 12 is pliability and light-permeable material, and comprises macromolecule silicon oxide compound.In the present embodiment, this macromolecule silicon oxide compound contains methyl, for example: dimethyl silicone polymer (Poly-dimethylsiloxane, PDMS).In addition, this end wall 12 has the characteristic of low surface tension, and preferably, its surface tension is lower than 30 dynes per centimeter.In the present embodiment, this end wall 12 is a film, and it fits on this substrate layer 10; Yet in other embodiments, this end wall 12 is to be coated on this substrate layer 10 by liquid form.
With reference to figure 2, utilize one first nozzle 30 that one first quantum dot composite material is sprayed on this end wall 12, to form one first quantum dot layer 14.Red quantum dot fluorescent powder) and a viscose glue this first quantum dot composite material (for example:, it mixes with certain proportion comprises one first quantum dot fluorescence powder.In the present embodiment, the spraying method of this first nozzle 30 is pulsed spraying, and it can add this first nozzle 30 by modulation pulse gas in spraying process, makes this first quantum dot composite material atomization and is attached to this end wall 12.Thus, can reduce the autohemagglutination phenomenon of this first quantum dot composite material, and can evenly be attached on any material, and can make the thickness of this first quantum dot layer 14 comparatively even.In the present embodiment, the first quantum dot layer 14 is formed on this end wall 12; Yet in other embodiments, on this substrate layer 10, also can not have this end wall 12, therefore, this first quantum dot layer 14 is directly formed on this substrate layer 10.Then, to heat or irradiating ultraviolet light mode is solidified this first quantum dot layer 14.
With reference to figure 3, form one first wall 16 on this first quantum dot layer 14.This first wall 16 is pliability and light-permeable material, and comprises macromolecule silicon oxide compound.In the present embodiment, this macromolecule silicon oxide compound contains methyl, for example: dimethyl silicone polymer (Poly-dimethylsiloxane, PDMS).In addition, this first wall 16 has the characteristic of low surface tension, and preferably, its surface tension is lower than 30 dynes per centimeter.In the present embodiment, this first wall 16 is a film, and it fits on this first quantum dot layer 14; Yet in other embodiments, this first wall 16 is to be coated on this first quantum dot layer 14 by liquid form.In the present embodiment, the material of this first wall 16 is identical with this end wall 12; Yet in other embodiments, the material of this first wall 16 also can be different from this end wall 12.
With reference to figure 4, utilize a second nozzle 32 that one second quantum dot composite material is sprayed on this first wall 16, to form one second quantum dot layer 18.This second nozzle 32 is identical or different with this first nozzle 30.Green quantum dot fluorescent powder) and a viscose glue this second quantum dot composite material (for example:, it mixes with certain proportion comprises one second quantum dot fluorescence powder.In the present embodiment, the spraying method of this second nozzle 32 is pulsed spraying, and it can add this second nozzle 32 by modulation pulse gas in spraying process, makes this second quantum dot composite material atomization and is attached to this first wall 16.Thus, can reduce the autohemagglutination phenomenon of this second quantum dot composite material, and be easy to adhere to.Then, to heat or irradiating ultraviolet light mode is solidified this second quantum dot layer 18.
With reference to figure 5, form one second wall 20 on this second quantum dot layer 18.This second wall 20 is pliability and light-permeable material, and comprises macromolecule silicon oxide compound.In the present embodiment, this macromolecule silicon oxide compound contains methyl, for example: dimethyl silicone polymer (Poly-dimethylsiloxane, PDMS).In addition, this second wall 20 has the characteristic of low surface tension, and preferably, its surface tension is lower than 30 dynes per centimeter.In the present embodiment, this second wall 20 is a film, and it fits on this second quantum dot layer 18; Yet in other embodiments, this second wall 20 is to be coated on this second quantum dot layer 18 by liquid form.In the present embodiment, the material of this second wall 20 is identical with this first wall 16; Yet in other embodiments, the material of this second wall 20 also can be different from this first wall 16.
With reference to figure 6, utilize one the 3rd nozzle 34 that one the 3rd quantum dot composite material is sprayed on this second wall 20, to form one the 3rd quantum dot layer 22.The 3rd nozzle 34 is identical or different with this first nozzle 30 and this second nozzle 32.Blue quantum dot fluorescent powder) and a viscose glue the 3rd quantum dot composite material (for example:, it mixes with certain proportion comprises one the 3rd quantum dot fluorescence powder.In the present embodiment, the spraying method of the 3rd nozzle 34 is pulsed spraying, and it can add the 3rd nozzle 34 by modulation pulse gas in spraying process, makes the 3rd quantum dot composite material atomization and is attached to this second wall 20.Thus, can reduce the autohemagglutination phenomenon of the 3rd quantum dot composite material, and be easy to adhere to.Then, to heat or irradiating ultraviolet light mode is solidified the 3rd quantum dot layer 22.
With reference to figure 7, form one the 3rd wall 24 on the 3rd quantum dot layer 22, to form a quantum dot stacked structure 1.The 3rd wall 24 is pliability and light-permeable material, and comprises macromolecule silicon oxide compound.In the present embodiment, this macromolecule silicon oxide compound contains methyl, for example: dimethyl silicone polymer (Poly-dimethylsiloxane, PDMS).In addition, the 3rd wall 24 has the characteristic of low surface tension, and preferably, its surface tension is lower than 30 dynes per centimeter.In the present embodiment, the 3rd wall 24 is a film, and it fits on the 3rd quantum dot layer 22; Yet in other embodiments, the 3rd wall 24 is to be coated on the 3rd quantum dot layer 22 by liquid form.In the present embodiment, the material of the 3rd wall 24 is identical with this first wall 16 and this second wall 20; Yet in other embodiments, the material of the 3rd wall 24 also can be different from this first wall 16 and this second wall 20.
Refer again to Fig. 7, show the cross-sectional schematic of an embodiment of quantum dot stacked structure of the present invention.This quantum dot stacked structure 1 comprises a substrate layer 10, at least one quantum dot layer and at least one wall.This substrate layer 10 is light-permeable material, and in the present embodiment, this substrate layer 10 is glass; Yet in other embodiments, this substrate layer 10 can be also plastic cement or other flexible materials.
This at least one quantum dot layer has a upper surface and a lower surface, and is positioned at this substrate layer 10 tops.This at least one wall is adjacent to upper surface or the lower surface of this at least one quantum dot layer.In the present embodiment, this quantum dot stacked structure 1 comprises three layers of quantum dot layer (this first quantum dot layer 14, this second quantum dot layer 18 and the 3rd quantum dot layer 22) and four interlayer interlayers (this end wall 12, this first wall 16, this second wall 20 and the 3rd wall 24), and wherein said wall one deck is wherein located between wherein two layers of described quantum dot layer.
Described wall (this end wall 12, this first wall 16, this second wall 20 and the 3rd wall 24) is pliability and light-permeable material, and comprises macromolecule silicon oxide compound.In the present embodiment, this macromolecule silicon oxide compound contains methyl, for example: dimethyl silicone polymer (Poly-dimethylsiloxane, PDMS).In addition, described wall (this end wall 12, this first wall 16, this second wall 20 and the 3rd wall 24) has the characteristic of low surface tension, and preferably, its surface tension is lower than 30 dynes per centimeter.The material of described wall (this end wall 12, this first wall 16, this second wall 20 and the 3rd wall 24) is same to each other or different to each other.
This first quantum dot layer 14 is to be solidified and formed by one first quantum dot composite material.Red quantum dot fluorescent powder) and a viscose glue this first quantum dot composite material (for example:, wherein this first quantum dot fluorescence powder accounts for the first percentage by weight of whole composite materials comprises one first quantum dot fluorescence powder.This second quantum dot layer 18 is to be solidified and formed by one second quantum dot composite material.Green quantum dot fluorescent powder) and a viscose glue this second quantum dot composite material (for example:, wherein this second quantum dot fluorescence powder accounts for the second percentage by weight of whole composite materials comprises one second quantum dot fluorescence powder.The 3rd quantum dot layer 22 is to be solidified and formed by one the 3rd quantum dot composite material.Blue quantum dot fluorescent powder) and a viscose glue the 3rd quantum dot composite material (for example:, wherein the 3rd quantum dot fluorescence powder accounts for the 3rd percentage by weight of whole composite materials comprises one the 3rd quantum dot fluorescence powder.This first percentage by weight, this second weight percent when the 3rd percentage by weight ratio each other can optionally be adjusted.For example, this first percentage by weight: this second percentage by weight: the 3rd percentage by weight can be 1:1:1, or 1:3:3, or 1:1.5:1.5, or 1:1.5:2.
As shown in Figure 7, in the present embodiment, this end wall 12 is positioned on this substrate layer 10, and sequentially folds and establish this first quantum dot layer 14, this first wall 16, this second quantum dot layer 18, this second wall 20, the 3rd quantum dot layer 22 and the 3rd wall 24 on this end wall 12; Yet in other embodiments, can omit this end wall 12, that is this first quantum dot layer 14 is located immediately on this substrate layer 10, and folded this first wall 16, this second quantum dot layer 18, this second wall 20, the 3rd quantum dot layer 22 and the 3rd wall 24 established sequentially on this first quantum dot layer 14.In the present invention, because each interlayer interlayer closely covers each layer of quantum dot layer, and reduce quantum dot autohemagglutination phenomenon, and then solve the problem of the uneven thickness producing because of autohemagglutination phenomenon.In addition, on described wall, can continue again and form another quantum dot layer, make the described quantum dot layer can be evenly up stacking, to promote light conversion efficiency.In addition, by each interlayer interlayer, closely cover each layer of quantum dot layer, can prevent that aqueous vapor from entering in described quantum dot layer and produce oxidation.
With reference to figure 8, show the cross-sectional schematic of another embodiment of quantum dot stacked structure of the present invention.The quantum dot stacked structure 1a of the present embodiment and the quantum dot stacked structure 1 of Fig. 7 are roughly the same, and wherein identical element is given identical numbering.The quantum dot stacked structure 1a of the present embodiment and the quantum dot stacked structure 1 of Fig. 7 different be in, in the present embodiment, this quantum dot stacked structure 1a also comprises a reflector 26, is positioned on the 3rd wall 24.In the present embodiment, this reflector 26 is coated on the 3rd wall 24, and preferably, this reflector 26 is a distributed bragg reflector (Distributed Bragg Reflector, DBR) structure, and it can allow part light pass and allow part light reflection.In other embodiments, can omit the 3rd wall 24, that is this reflector 26 is located immediately on the 3rd quantum dot layer 22.
With reference to figure 9, show the cross-sectional schematic of an embodiment of light-emitting component of the present invention.This light-emitting component 2 comprises a light source 28 and a quantum dot stacked structure 1a.This light source 28 is in order to provide light, and in the present embodiment, this light source 28 can be one or more light sources, for example, in order to send high-octane short-wavelength light: ultraviolet light (UV light).In other embodiments, in order to send the demand of different colours light, light source also can be blue light.This quantum dot stacked structure 1a is positioned at this light source 28 tops, and is the quantum dot stacked structure 1a shown in Fig. 8, yet is understandable that, this quantum dot stacked structure 1a also can be replaced by this quantum dot stacked structure 1 of Fig. 7.In the present embodiment, this substrate layer 10 has a first surface 101 and a second surface 102, and described quantum dot layer and described wall are positioned at first surface 101 tops of this substrate layer 10.The second surface 102 of this substrate layer 10 is in the face of this light source 28, and therefore, the light that this light source 28 sends enters this quantum dot stacked structure 1a via the second surface 102 of this substrate layer 10, and by these reflector 26 outputs.In the present invention, the light emitted by this reflector 26 is plane light, and can be white light.In addition, if necessary, can comply with when the 3rd percentage by weight ratio each other of this first percentage by weight of aforementioned adjustment, this second weight percent, to change the colour temperature by the emitted light in this reflector 26.
Above-described embodiment is only explanation principle of the present invention and effect thereof, and unrestricted the present invention, so those skilled in the art modify to above-described embodiment and change still not de-spirit of the present invention.Interest field of the present invention as the aforementioned claim is listed.
Claims (24)
1. a quantum dot stacked structure, comprising:
One substrate layer;
At least one quantum dot layer, has a upper surface and a lower surface, and is positioned at this substrate layer top; And
At least one wall, is adjacent to upper surface or the lower surface of this at least one quantum dot layer, and wherein this at least one wall comprises macromolecule silicon oxide compound.
2. quantum dot stacked structure as claimed in claim 1, wherein this at least one quantum dot layer is multi-layer quantum point layer, and this at least one wall is Spaced layer, and described wall one deck is wherein located between wherein two layers of described quantum dot layer.
3. quantum dot stacked structure as claimed in claim 1, wherein this at least one wall is between this at least one quantum dot layer and this substrate layer.
4. quantum dot stacked structure as claimed in claim 1, wherein this substrate layer and this at least one wall are light-permeable material.
5. quantum dot stacked structure as claimed in claim 1, wherein this macromolecule silicon oxide compound contains methyl.
6. quantum dot stacked structure as claimed in claim 5, wherein this macromolecule silicon oxide compound is dimethyl silicone polymer.
7. quantum dot stacked structure as claimed in claim 1, wherein the surface tension of this at least one wall is lower than 30 dynes per centimeter.
8. quantum dot stacked structure as claimed in claim 1, wherein this at least one quantum dot layer comprises one first quantum dot layer and one second quantum dot layer, this at least one wall comprises an end wall and one first wall, this end wall is positioned on this substrate layer, this first quantum dot layer is positioned on this end wall, this first wall is positioned on this first quantum dot layer, and this second quantum dot layer is positioned on this first wall.
9. quantum dot stacked structure as claimed in claim 8, the quantum dot layer that wherein this first quantum dot layer and this second quantum dot layer are different colours.
10. a light-emitting component, comprising:
One light source, in order to provide light; And
One quantum dot stacked structure, comprising:
One substrate layer, for light-permeable material and have a first surface and a second surface, this second surface is in the face of this light source;
At least one quantum dot layer, has a upper surface and a lower surface, and is positioned at the first surface top of this substrate layer; And
At least one wall, for light-permeable material and be adjacent to upper surface or the lower surface of this at least one quantum dot layer, wherein this at least one wall comprises macromolecule silicon oxide compound.
11. light-emitting components as claimed in claim 10, wherein this at least one quantum dot layer is multi-layer quantum point layer, and this at least one wall is Spaced layer, and described wall one deck is wherein located between wherein two layers of described quantum dot layer.
12. light-emitting components as claimed in claim 10, wherein this at least one wall is between this at least one quantum dot layer and this substrate layer.
13. light-emitting components as claimed in claim 10, wherein this macromolecule silicon oxide compound contains methyl.
14. light-emitting components as claimed in claim 13, wherein this macromolecule silicon oxide compound is dimethyl silicone polymer.
15. light-emitting components as claimed in claim 10, wherein the surface tension of this at least one wall is lower than 30 dynes per centimeter.
16. light-emitting components as claimed in claim 10, wherein this at least one quantum dot layer comprises one first quantum dot layer and one second quantum dot layer, this at least one wall comprises an end wall and one first wall, this end wall is positioned on the first surface of this substrate layer, this first quantum dot layer is positioned on this end wall, this first wall is positioned on this first quantum dot layer, and this second quantum dot layer is positioned on this first wall.
17. light-emitting components as claimed in claim 16, the quantum dot layer that wherein this first quantum dot layer and this second quantum dot layer are different colours.
18. light-emitting components as claimed in claim 10, also comprise a reflector, are positioned on this at least one quantum dot layer or this at least one wall, and wherein this reflector is a Bragg reflection body structure.
The manufacture method of 19. 1 kinds of quantum dot stacked structures, comprises the following steps:
A) provide a substrate layer;
B) with spraying method, form one first quantum dot layer, wherein this first quantum dot layer is adjacent to this substrate layer; And
C) form one first wall on this first quantum dot layer, wherein this first wall comprises macromolecule silicon oxide compound.
The manufacture method of 20. quantum dot stacked structures as claimed in claim 19, wherein this step a) also comprises the step of one end of a formation wall on this substrate layer and this step b afterwards) the first quantum dot layer be formed on this end wall.
The manufacture method of 21. quantum dot stacked structures as claimed in claim 19, wherein this step b) spraying method be pulsed spraying.
The manufacture method of 22. quantum dot stacked structures as claimed in claim 19, wherein this step c) macromolecule silicon oxide compound be dimethyl silicone polymer.
The manufacture method of 23. quantum dot stacked structures as claimed in claim 19, wherein this step c) also comprise afterwards:
D) with spraying method, form one second quantum dot layer on this first wall; And
E) form one second wall on this second quantum dot layer, wherein this second wall comprises macromolecule silicon oxide compound.
The manufacture method of 24. quantum dot stacked structures as claimed in claim 23, the quantum dot layer that wherein this first quantum dot layer and this second quantum dot layer are different colours, and this first wall is identical with the material of this second wall.
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| CN103545404B (en) | 2016-12-21 |
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