CN103529727B - A kind of multi-channel data buffer interface chip with non-volatile latch function - Google Patents
A kind of multi-channel data buffer interface chip with non-volatile latch function Download PDFInfo
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- CN103529727B CN103529727B CN201310426698.9A CN201310426698A CN103529727B CN 103529727 B CN103529727 B CN 103529727B CN 201310426698 A CN201310426698 A CN 201310426698A CN 103529727 B CN103529727 B CN 103529727B
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- 230000005291 magnetic effect Effects 0.000 claims abstract description 48
- 238000002955 isolation Methods 0.000 claims abstract description 24
- 238000010168 coupling process Methods 0.000 claims abstract description 21
- 238000005859 coupling reaction Methods 0.000 claims abstract description 21
- 230000008878 coupling Effects 0.000 claims abstract description 20
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims abstract description 6
- 125000006850 spacer group Chemical group 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 4
- 230000008054 signal transmission Effects 0.000 claims 1
- 238000011084 recovery Methods 0.000 abstract description 2
- 230000006870 function Effects 0.000 description 12
- 230000005415 magnetization Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000011664 signaling Effects 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005476 size effect Effects 0.000 description 2
- 230000003471 anti-radiation Effects 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Abstract
The present invention relates to a kind of multi-channel data buffer interface chip with non-volatile latch function.Current chip will lose the information that stores when power down, be unfavorable for the recovery of system after power down, also may cause the mistake of system.Each data channel in the present invention latches isolation coupling unit by signal input part, non-volatile magnetic and triple gate data output end forms, wherein non-volatile magnetic latch isolation coupling unit comprises field signal generation circuit and magnetic susceptibility storage unit, and field signal generation circuit and magnetic susceptibility storage unit are by dielectric spacer layer electrical isolation.The present invention not only has little, the fireballing characteristic of volume, and has non-volatile latch function and data isolation coupling function concurrently.
Description
Technical field
The invention belongs to data buffering interface chip technical field, relate to a kind of multi-channel data signaling interface chip with non-volatile latch function.
Background technology
Hyperchannel three-state data buffer interface chip can be widely used in the fields such as computer network interface, data transmission, telecommunications, sensor, instrument, mobile electron and Medical Devices.8 three-state data buffer interface chips (TI Products) of typical band latch function as shown in Figure 1.When LE is in high level, the output state of latch will follow the input of signal.When LE is in low level, latch by input data state latch and export.OE is for controlling 8 triple gates, and when OE is high level, triple gate is high-impedance state, and when OE is low level, triple gate is conducting state.
But such chip in use deposits defect both ways: 1) will the information that stores be lost when power down, be unfavorable for the recovery of system after power down, also may cause the mistake of system; 2) between the input and output of signal, do not carry out electrical isolation, the ground circuit electric current that the potential difference of input equipment and output device causes and association noise likely cause data transmission fault.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, provide a kind of multi-channel data buffer interface chip with non-volatile latch function.
The technical scheme that technical solution problem of the present invention is taked is:
Each data channel latches isolation coupling unit by signal input part, non-volatile magnetic and triple gate data output end forms, wherein non-volatile magnetic latch isolation coupling unit comprises field signal generation circuit and magnetic susceptibility storage unit, and field signal generation circuit and magnetic susceptibility storage unit are by dielectric spacer layer electrical isolation.
Described magnetic susceptibility storage unit and signal input part carry out data transmission by field signal.
The data that described magnetic susceptibility storage unit stores change along with the change of input signal, when outside power down, and data when magnetic susceptibility storage unit will latch power down and not losing.
The status data (" 0 " or " 1 ") of described magnetic susceptibility storage unit, is output when signal output enable end is in effective status.
Described interface chip has Nonvolatile data and latches and signal isolation coupling dual-use function.
Described magnetic susceptibility storage unit can be the resistance made based on anisotropic magnetoresistive, giant magnetoresistance, magnetic tunnel-junction material or the electric bridge be made up of its resistance.
Multi-channel data signaling interface chip of the present invention, data channel number can be individual data passage, also can be multiple data channel (as 4 passages, 8 passages, 16 passages etc.).
Involved in the present invention has the non-volatile multi-channel data buffer interface chip latching storage isolation coupling function, overcome the deficiency of existing hyperchannel three-state data buffer interface chip, not only there is little, the fireballing characteristic of volume, and have non-volatile latch function and data isolation coupling function concurrently, and anti-radiation requirement in national defense industry.
Accompanying drawing explanation
Fig. 1 is 8 three-state data buffer interface chip schematic diagram of band latch function;
Fig. 2 has the multi-channel data buffer interface chip schematic diagram that non-volatile magnetic latches isolation coupling function;
Fig. 3 is the basic functional block diagram that isolation coupling unit deposited by magnetic padlock;
Fig. 4 is magnetic susceptibility storage unit: a) low resistance state, b) magnetic storage characteristic, c) high-impedance state.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
Principle schematic as shown in Figure 2 for multi-channel data signaling interface chip (for 8 passages) of the present invention.Each data channel latches isolation coupling unit by signal input part, non-volatile magnetic, triple gate data output end forms, wherein non-volatile magnetic latch isolation coupling unit by field signal produce circuit and and field signal to produce between circuit form by the magnetic susceptibility unit of insulating medium electrical isolation, insulating medium can be vacuum, insulating gas, also can be inorganic insulating material, also can be organic insulation.
The effect that non-volatile magnetic latches isolation coupling unit carries out isolation coupling and latches data to input data signal.When LE is in low level, non-volatile magnetic latches isolation coupling unit by the state latch of input data and exports.OE is for controlling 8 triple gates, and when OE is high level, triple gate is in high-impedance state, and when OE is low level, triple gate is in conducting state, and the data of latch units will externally export.
The basic function of non-volatile magnetic store isolated coupling unit as shown in Figure 3.First data-signal is converted to current signal by V/I conversion circuit, and drive coil produces signal magnetic field; The direction in the signal magnetic field produced determines the state of magnetic cell; Information in storage unit is read by subsequent conditioning circuit, processes and export
A key of the multiple tracks data isolation coupling interface chip development with non-volatile latch function of the present invention be design and preparation based on magnetic susceptibility storage unit, this needs to consider the size effect of magnetic susceptibility storage unit, memory mechanism, stability and " reading " " write " method.Magnetic susceptible material is after being etched to the micron dimension even resistive memory cell of sub-micrometer scale, and due to size effect, its performance and the nano film material do not etched have a great difference.Described magnetic susceptibility storage unit can be the resistance made based on anisotropic magnetoresistive, giant magnetoresistance, magnetic tunnel-junction material or the electric bridge be made up of its resistance.For giant magnetoresistance (GMR) or magnetic tunnel-junction (MTJ) storage unit, as shown in Figure 4, the direction of magnetization of nailed layer is by being fixed on long axis direction (x-axis direction) with the exchange-coupling interaction of Antiferromagnetic pinning layer for its resistance unit principle of work.And the direction of magnetization of free layer is not fixed, can with under the signal magnetic fields of different directions at the forward of long axis direction and be reversed magnetization reversal.The resistance of resistance switches between high-impedance state and low resistance state with the upset of free layer direction of magnetization, thus realizes " 0 " of storage unit and one state switches.
Claims (4)
1. one kind has the multi-channel data buffer interface chip of non-volatile latch function, it is characterized in that: each data channel latches isolation coupling unit by signal input part, non-volatile magnetic and triple gate data output end forms, wherein non-volatile magnetic latch isolation coupling unit comprises field signal generation circuit and magnetic susceptibility storage unit, and field signal generation circuit and magnetic susceptibility storage unit are by dielectric spacer layer electrical isolation;
Described magnetic susceptibility storage unit and signal input part carry out Signal transmissions by magnetic field;
The data that described magnetic susceptibility storage unit stores change along with the change of input signal, when outside power down, and data when magnetic susceptibility storage unit will latch power down and not losing;
The status data of described magnetic susceptibility storage unit is output when signal output enable end is in effective status;
This interface chip has Nonvolatile data and latches and signal isolation coupling dual-use function.
2. multi-channel data buffer interface chip according to claim 1, is characterized in that: magnetic susceptibility storage unit is the resistance made based on anisotropic magneto-resistive material or the electric bridge be made up of resistance.
3. multi-channel data buffer interface chip according to claim 1, is characterized in that: magnetic susceptibility storage unit is the resistance made based on giant magnetic resistor material or the electric bridge be made up of resistance.
4. multi-channel data buffer interface chip according to claim 1, is characterized in that: magnetic susceptibility storage unit is the resistance made based on magnetic tunnel-junction material or the electric bridge be made up of resistance.
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| CN201310426698.9A CN103529727B (en) | 2013-09-17 | 2013-09-17 | A kind of multi-channel data buffer interface chip with non-volatile latch function |
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| CN103529727B true CN103529727B (en) | 2016-04-06 |
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| CN113422601B (en) * | 2021-08-23 | 2021-11-16 | 上海灵动微电子股份有限公司 | Voltage conversion high-level isolation unit based on magnetic tunnel junction |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1244017A (en) * | 1998-08-05 | 2000-02-09 | 国际商业机器公司 | Non-volatile magnetic memory unit and component |
| CN102227777A (en) * | 2008-12-04 | 2011-10-26 | 高通股份有限公司 | Non-volatile state retention latches |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3711459B2 (en) * | 2002-06-05 | 2005-11-02 | 松下電器産業株式会社 | Driving method of nonvolatile memory circuit |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1244017A (en) * | 1998-08-05 | 2000-02-09 | 国际商业机器公司 | Non-volatile magnetic memory unit and component |
| CN102227777A (en) * | 2008-12-04 | 2011-10-26 | 高通股份有限公司 | Non-volatile state retention latches |
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