CN103513519A - Monitoring system for liquid drop target space positions in light sources of extreme ultraviolet photoetching machine - Google Patents
Monitoring system for liquid drop target space positions in light sources of extreme ultraviolet photoetching machine Download PDFInfo
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- CN103513519A CN103513519A CN201310419936.3A CN201310419936A CN103513519A CN 103513519 A CN103513519 A CN 103513519A CN 201310419936 A CN201310419936 A CN 201310419936A CN 103513519 A CN103513519 A CN 103513519A
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Abstract
The invention discloses a monitoring system for liquid drop target space positions in light sources of an extreme ultraviolet photoetching machine. The monitoring system comprises two detection light sources, two four-quadrant photoelectric detectors, a signal processor, a signal controller and a two-dimensional electric displacement table, wherein the two-dimensional electric displacement table is used for storing a spray nozzle; the spray direction of the liquid drop spray nozzle is set to be a Z axis; the first detection light source and the first four-quadrant photoelectric detector are combined for detecting an offset in an X direction; the second detection light source and the second four-quadrant photoelectric detector are combined for detecting an offset in a Y direction; the first four-quadrant photoelectric detector and the second four-quadrant photoelectric detector are electrically connected with the signal processor respectively; the signal processor is used for processing the output signals of the four-quadrant photoelectric detectors and feeding the processed signals back to the signal controller for controlling and adjusting the two-dimensional electric displacement table to control the position of the liquid drop spray nozzle and guarantee liquid drops to be sprayed along the focal spot center of a laser pulse. The monitoring system can be used for guaranteeing the liquid drops to be sprayed along the focal spot center of the laser pulse and improving the EUV (extreme ultraviolet) generation efficiency.
Description
Technical field
The invention belongs to EUV (Extreme Ultraviolet, extreme ultraviolet) light source field, more specifically, relate to and a kind ofly based on 4 quadrant detector, real-time monitoring system is carried out in drop target locus in extreme ultraviolet photolithographic machine light source.
Background technology
Photoetching technique is as technology the most key in semi-conductor industry, and the development for whole industry in the evolution course of semi-conductor industry over half a century provides strong technical support.At present, the method for the ArF excimer laser immersion lithography utilization of the 193nm in conventional lithographic techniques increase etching system numerical aperture has broken through the restriction of 22nm node.But due to the restriction of itself exposure light source, then break through that more minor node is extremely difficult.Extreme ultraviolet photolithographic (Extreme Ultraviolet Lithography, EUVL) technology utilizes 13.5nm or the extreme ultraviolet of 6.X wave band carries out chips in etching as litho machine light source.Owing to having utilized more short wavelength's light source, EUVL technology can significantly promote the resolution of etching.Thereby the acquisition of extreme ultraviolet is mainly the material in plasmoid with the spectral line of emission in EUV radiation scope to be energized into plasmoid give off EUV light.
LPP (Laser Produced Plasma, laser plasma light source) is a kind of by laser and drop target interaction generation plasma, thereby obtains the method for EUV radiation.Because LPP does not have the anticorrosive requirement of border material, there is no the restriction of heat load yet; Because spot size after Laser Focusing is very little, the plasma position of formation is concentrated and is made EUV collection angle larger simultaneously, therefore becomes the primary selection that obtains EUV light source.In LPP light source, the acquisition of symmetrical liquid drop mainly adopts symmetrical liquid drop injecting method to obtain uniform drop target, by utilizing lasting pressure extrusion to make liquid form jet by spray orifice, under the effect of incentive condition, is broken into symmetrical liquid drop.Be illustrated in figure 1 the structural representation that produces LPP, by the periodic vibration of ultrasonic transducer, make liquid operation material from nozzle 11 ejections, obtain uniform drop 12.Controller 13 gating pulse CO2 laser instrument 14 work, the laser pulse 15 of generation interacts with the drop 12 spraying after lens 16 focus on, and is vaporized, ionizes the plasma producing containing EUV.Because laser pulse focal position immobilizes, therefore need to control drop target nozzle location, guarantee its injection of focusing center along laser pulse, obtain stable EUV radiating light source.
The monitoring of the target of symmetrical liquid drop all adopts CCD to realize conventionally, by CCD, can to droplet position, observe intuitively, but CCD, because data processing is compared with causing the response time longer slowly, cannot carry out Real-time Feedback to signal under the condition of high repetition.
Summary of the invention
The invention provides the supervisory system of drop target locus in a kind of extreme ultraviolet photolithographic machine light source, object is to measure in real time by the positional information to drop, and utilize this signal to carry out feedback regulation, guarantee that drop sprays along the focal spot center position of laser pulse, improves EUV generation efficiency.
The supervisory system of drop target locus in a kind of extreme ultraviolet photolithographic machine light source provided by the invention, it is characterized in that, it comprises the first probe source, the first four-quadrant photo detector, the second probe source, the second four-quadrant photo detector, signal processor, signal controller and two-dimentional electric displacement platform;
Two dimension electric displacement platform is used for placing nozzle, if drop nozzles injection direction is Z axis, the first probe source and the first four-quadrant photo detector coordinate the skew for detection of directions X, and the second probe source and the second four-quadrant photo detector coordinate the skew for detection of Y-direction;
The first four-quadrant photo detector and the second four-quadrant photo detector are electrically connected to signal processor respectively, signal processor feeds back to signal controller for two-dimentional electric displacement platform is carried out to regulating and controlling after the output signal of four-quadrant photo detector is processed, to control drop nozzles position, guarantee that drop sprays along the focal spot center position of laser pulse.
Eject position is unstable in the course of the work to the invention solves drop target, can depart from the shortcoming of CO2 laser pulse focal position.During work, during the work of drop target, along central axis Jet with downward flow direction, guarantee that drop is by CO2 laser pulse focal position, detecting light beam, by drop, be incident upon on four-quadrant photo detector, and hot spot is uniformly distributed simultaneously.If drop sprays by pulse focal position along central axis, the variation of photodetector left and right quadrant is equal, and signal difference is output as 0; If spraying, drop slightly departs from laser pulse focal position, the variation of photodetector left and right quadrant is unequal, signal difference output is not 0, signal processor by this signal feedback to signal controller, electric two-dimension translational platform is carried out to corresponding movement, guarantee that drop sprays along the focal spot center position of laser pulse, obtains stable laser plasma light source.
The present invention is simple in structure, easy to operate, adopts the photodetector of high-frequency response to enter to survey and to carry out signal feedback the drop of high repetition, improves the stability that drop target sprays.
Accompanying drawing explanation
Fig. 1 is laser pulse and drop effect schematic diagram;
The system architecture schematic diagram that Fig. 2 provides for example of the present invention;
The workflow diagram of the system that Fig. 3 provides for example of the present invention;
Fig. 4 is the schematic diagram that liquid droplets departs from;
Fig. 5 is the synchronous control structure schematic diagram of laser pulse and drop;
Fig. 6 is the monitoring of drop injection direction locus and controls schematic diagram.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described further.At this, it should be noted that, for the explanation of these embodiments, be used for helping to understand the present invention, but do not form limitation of the invention.In addition,, in each embodiment of described the present invention, involved technical characterictic just can not combine mutually as long as do not form each other conflict.
As shown in Figure 2, in a kind of extreme ultraviolet photolithographic machine light source that example of the present invention provides, the supervisory system of drop target locus mainly comprises the first probe source 21, the first four-quadrant photo detector 22, the second probe source 23, the second four-quadrant photo detector 24, signal processor 25, signal controller 26 and two-dimentional electric displacement platform 27.If drop nozzles 11 is sprayed along Z-direction, the skew that the first probe source 21 and the first four-quadrant photo detector 22 coordinate for detection of directions X, the skew that the second probe source 23 and the second four-quadrant photo detector 24 coordinate for detection of Y-direction.
The direction that the first probe source 21 sends light beam is vertical with the direction that drop 12 sprays, the optical axis of the first probe source 21 is vertical with the photosurface of the first four-quadrant photo detector 22, the light beam perpendicular projection of its transmitting, on the photosurface of the first four-quadrant photo detector 22, guarantees the output equal and opposite in direction of four quadrants of the first four-quadrant photo detector 22.
The direction of the second probe source 23 light beams is vertical with the injection direction of drop 12, and vertical with the direction of the second probe source 23 light beams, the optical axis of the second probe source 23 is vertical with the photosurface of the second four-quadrant photo detector 24, guarantees four quadrant output equal and opposite in directions of the second four-quadrant photo detector 24.The optical axis of the first probe source 21 and the second probe source 23 remains in same plane.
The first four-quadrant photo detector 22 and the second four-quadrant photo detector 24 are electrically connected to signal processor 25 respectively, signal processor 25 feeds back to signal controller 26 for two-dimentional electric displacement platform 27 is carried out to regulating and controlling after the output signal of four-quadrant photo detector is processed, control drop nozzles 11 positions, guarantee that drop sprays along the focal spot center position of laser pulse.Further, in a kind of extreme ultraviolet photolithographic machine light source based on 4 quadrant detector, the supervisory system of drop target locus can also be monitored along the position of injection direction drop, obtain the time that drop arrives laser pulse focal position, utilize the synchronous laser pulse of this signal discharge time simultaneously, while guaranteeing drop arrival pulse concentration position, laser instrument also sends laser simultaneously, obtains stable EUV output.
Described four-quadrant photo detector has high response frequency (can reach Gigahertz), can meet the measurement of drop when high repetition frequency sprays.Described four-quadrant photo detector has symmetrical photosurface, and probe source is had to linear response.Described probe source 21 and 22 can cover the photosurface of whole 4 quadrant detector through expanding, thereby obtains better linear response.
Described signal processor 25 comprises preposition amplification, and A/D change-over circuit etc. can process and display the signal of two 4 quadrant detectors simultaneously.Described signal controller 26 converts signal processor 25 to displacement by electric signal output, and controls two-dimentional electric displacement platform 27 Control Nozzle 11 positions.
The implementation of injection supervising device of the present invention is described according to Fig. 3 and Fig. 4 below.During the normal operation of drop target, drop 12 sprays spray along the focal spot center position of laser pulse, during drop 12 process detecting light beam, and two of the left and right quadrant (I of 4 quadrant detector
1and I
2) part that is blocked equates, so the output of the signal of these two quadrants still equates, signal output difference Δ I=I at this moment
1-I
2=0 (as shown in Fig. 4 a), now without changing drop nozzles 11 position.If drop 12 eject positions are offset (as shown in Figure 4 b) to X-axis positive dirction, during drop 12 process detecting light beam, the part that two quadrants of four-quadrant photo detector are blocked is unequal, the i.e. signal of two quadrants output is unequal, and four-quadrant photo detector has signal difference Δ I (Δ I=I
1-I
2> 0) output, this signal difference Δ I carries out record by signal processor 25, and feed back to signal controller 26, signal processor 25 converts signal difference Δ I signal to electric displacement signal delta (Δ=f (Δ I)), be used for controlling two-dimentional electric displacement platform 27 and move in X-direction, electric displacement signal delta and signal difference Δ I relation can be expressed from the next:
Wherein k is the preset parameter of two quadrant photodetection, has reflected the relation of variable quantity and the facula position amount of movement of light intensity, can be by detector being demarcated to acquisition.Electric displacement signal delta can oppositely regulate by electric two-dimension translational platform 27, thereby guarantees that drop 12 sprays along the focal spot center position of laser pulse.
Further, in a kind of extreme ultraviolet photolithographic machine light source based on 4 quadrant detector, the supervisory system of drop target locus can also be monitored along the position of injection direction drop, obtain the time that drop arrives laser pulse focal position, utilize the synchronous laser pulse of this signal discharge time simultaneously, while guaranteeing drop arrival pulse concentration position, laser instrument is also worked simultaneously, and then obtains stable EUV output.
The synchronous control structure of laser pulse and drop as shown in Figure 5, after mainly the signal of the second four-quadrant photo detector 24 being processed by signal processing circuit 51, the signal controller 13 that feeds back to pulsed laser 14 is controlled the time that laser pulse occurs, thereby realizes synchronous.Described signal processor 51 can be signal comparator.As shown in Figure 6, the signal difference of two quadrants that are arranged in order along injection direction is defeated is Δ I=I to signal conversion process
1-I
4(or Δ I=I
2-I
3), when drop does not arrive detecting location, Δ I remains 0 always; Before drop centered arrives detection center, Δ I is less than 0 all the time; When drop centered is when surveying the latter half, Δ I is greater than 0 all the time.Difference signal output after this signal is processed by signal processing circuit 51 is as shown in Fig. 6 right half, this signal can be as the trigger pip of pulsed laser 14, coordinate the triggered time of signal controller 13 gating pulse laser instruments 14, and then realize the synchronous of laser pulse time of origin and drop time of arrival.
The series of advantages such as the present invention can well monitor and control the jet space of drop target, and utilizes these signals to realize injection direction and synchronous control of burst length, has sensitivity high, and measurement mechanism is simple, method is easy.
The above is preferred embodiment of the present invention, but the present invention should not be confined to the disclosed content of this embodiment and accompanying drawing.So every, do not depart from the equivalence completing under spirit disclosed in this invention or revise, all falling into the scope of protection of the invention.
Claims (2)
1. the supervisory system of drop target locus in an extreme ultraviolet photolithographic machine light source, it is characterized in that, it comprises the first probe source (21), the first four-quadrant photo detector (22), the second probe source (23), the second four-quadrant photo detector (24), signal processor (25), signal controller (26) and two-dimentional electric displacement platform (27);
Two dimension electric displacement platform (27) is for placing nozzle (11), if drop nozzles (11) injection direction is Z axis, the first probe source (21) and the first four-quadrant photo detector (22) coordinate the skew for detection of directions X, and the second probe source (23) and the second four-quadrant photo detector (24) coordinate the skew for detection of Y-direction;
The first four-quadrant photo detector (22) and the second four-quadrant photo detector (24) are electrically connected to signal processor (25) respectively, signal processor (25) feeds back to signal controller (26) for two-dimentional electric displacement platform (27) is carried out to regulating and controlling after the output signal of four-quadrant photo detector is processed, to control drop nozzles (11) position, guarantee that drop sprays along the focal spot center position of laser pulse.
2. the supervisory system of drop target locus in a kind of extreme ultraviolet photolithographic machine light source according to claim 1, is characterized in that,
The direction that described the first probe source (21) sends light beam is vertical with the direction that drop (12) sprays, the optical axis of the first probe source (21) is vertical with the photosurface of the first four-quadrant photo detector (22), the light beam perpendicular projection of its transmitting, on the photosurface of the first four-quadrant photo detector (22), makes the output equal and opposite in direction of four quadrants of the first four-quadrant photo detector (22);
The direction of the second probe source (23) light beam is vertical with the injection direction of drop (12), and vertical with the direction of the second probe source (23) light beam, the optical axis of the second probe source (23) is vertical with the photosurface of the second four-quadrant photo detector (24), makes four quadrant output equal and opposite in directions of the second four-quadrant photo detector (24); The optical axis of the first probe source (21) and the second probe source (23) remains in same plane.
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Cited By (6)
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CN105511231A (en) * | 2014-10-16 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | EUV light source and exposing device |
CN105573062A (en) * | 2014-10-17 | 2016-05-11 | 中芯国际集成电路制造(上海)有限公司 | Euv light source and exposure device |
TWI569689B (en) * | 2015-04-30 | 2017-02-01 | 台灣積體電路製造股份有限公司 | Extreme ultraviolet radiation source module, extreme ultraviolet lithography system and extreme ultraviolet lithography process |
CN106527050B (en) * | 2015-09-09 | 2018-02-16 | 中芯国际集成电路制造(上海)有限公司 | The dynamically balanced correcting device of integrated rotating structure and modification method |
CN109716078A (en) * | 2016-09-14 | 2019-05-03 | Asml荷兰有限公司 | Determine mobile property of the target in EUV light source |
JP2020512577A (en) * | 2017-03-20 | 2020-04-23 | エーエスエムエル ネザーランズ ビー.ブイ. | Metrology system for extreme ultraviolet light sources |
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CN105573062A (en) * | 2014-10-17 | 2016-05-11 | 中芯国际集成电路制造(上海)有限公司 | Euv light source and exposure device |
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TWI569689B (en) * | 2015-04-30 | 2017-02-01 | 台灣積體電路製造股份有限公司 | Extreme ultraviolet radiation source module, extreme ultraviolet lithography system and extreme ultraviolet lithography process |
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CN106527050B (en) * | 2015-09-09 | 2018-02-16 | 中芯国际集成电路制造(上海)有限公司 | The dynamically balanced correcting device of integrated rotating structure and modification method |
CN109716078A (en) * | 2016-09-14 | 2019-05-03 | Asml荷兰有限公司 | Determine mobile property of the target in EUV light source |
JP2020512577A (en) * | 2017-03-20 | 2020-04-23 | エーエスエムエル ネザーランズ ビー.ブイ. | Metrology system for extreme ultraviolet light sources |
JP7240322B2 (en) | 2017-03-20 | 2023-03-15 | エーエスエムエル ネザーランズ ビー.ブイ. | Metrology system for extreme ultraviolet light sources |
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