CN103481565B - A kind of electrostatic-adhereheat-insulating heat-insulating film and manufacture method thereof - Google Patents
A kind of electrostatic-adhereheat-insulating heat-insulating film and manufacture method thereof Download PDFInfo
- Publication number
- CN103481565B CN103481565B CN201310380346.4A CN201310380346A CN103481565B CN 103481565 B CN103481565 B CN 103481565B CN 201310380346 A CN201310380346 A CN 201310380346A CN 103481565 B CN103481565 B CN 103481565B
- Authority
- CN
- China
- Prior art keywords
- layer
- film
- electrostatic
- adhereheat
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The present invention provides that a kind of light transmission is excellent, infrared and ultraviolet reflectivity is the highest, manufacturing process is simple, the manufacture method of long-lived electrostatic-adhereheat-insulating heat-insulating film, the manufacture method of electrostatic-adhereheat-insulating heat-insulating film, is realized by each functional layer of superposition on the substrate layer provided.
Description
Technical field
The present invention relates to a kind of electrostatic-adhereheat-insulating heat-insulating film and manufacture method thereof.
Background technology
The Main Function of thermal isolation film is in the transmission hindering heat.Thermal isolation film is not only widely used in various friendship
On logical instrument, also use on building in a large number.According to statistics, in general commercial building, and air-conditioning
Relevant power consumption accounts for the 47% of total electricity consumption.So, reduce the need for electricity of air-conditioning, for saving
Building operating cost is a critically important problem.
Infrared part in sunlight is the topmost thermal source of nature.Sunlight is (the most therein
Infrared part) enter behind commercial building inside, indoor temperature can be made to improve, for being lowered into building thing
Interior solar radiation, typically can stick thermal isolation film at the window of commercial building.But, thermal isolation film is except energy
Enough stop the infrared part in sunlight, also can stop the visible ray in sunlight, and cause business big
The luminance-reduction of inner space, building.
Summary of the invention
It is an object of the invention to provide that a kind of light transmission is excellent, infrared and ultraviolet reflectivity is the highest, system
Make technique simple, long-lived electrostatic-adhereheat-insulating heat-insulating film and manufacture method thereof.
The purpose of the present invention is achieved through the following technical solutions:
The manufacture method of a kind of electrostatic-adhereheat-insulating heat-insulating film, comprises the following steps:
(1) base material is provided；
(2) use physical gas-phase deposition (PVD) at substrate upper surface depositing layers of titanium, depositing
Journey applies a direction controlling electric field to deposition surface so that titanium layer grained deposits direction is consistent；
(3) semi-finished product that step (2) prepares are dried；
(4) the redeposited one layer of film plating layer of bias magnetically controlled sputter method is used；
(5) semi-finished product that step (4) prepares are dried；
(6) base material lower surface silicon-coating glue-line；
(7) in the layer of silica gel of base material lower surface, covering removes film；
(8) eventually pass dry, one-body molded obtain described electrostatic-adhereheat-insulating heat-insulating film.
Preferably, base material is carbon-fiber film；
Preferably, the direction controlling electric field applied is vertical direction so that titanium layer crystal grain is vertical bar shape row
Row.
Preferably, physical gas-phase deposition is used in titanium layer surface titanium nitride layer.
Preferably, described film plating layer is silver oxide, zinc oxide or nickel oxide.
Preferably, described scratch-resistant layer is PET protection film.
Preferably, removing film described in is PET protection film.
Preferably, the depositing temperature of physical gas-phase deposition (PVD) is 50-100 DEG C, sedimentation time
For 0.5-1h.
Preferably, described drying temperature is 80-110 DEG C, and drying time is 2-3h；Described baking temperature is
120-140 DEG C, drying time is 3-4h.
Preferably, between titanium layer surface and film plating layer, also deposition has titanium nitride layer；It is coated with on film plating layer surface
One layer of scratch-resistant layer of cloth.
It is furthermore preferred that be further coated with a dielectric layer on film plating layer.
It is furthermore preferred that increase dielectric deposition process between step (6) and step (7) at film plating layer
Upper deposition silicon dioxide dielectric layer, this dielectric deposition process uses plasma frequency-converter power gradually to strengthen
Method carry out dielectric deposition so that in deposition process, sedimentation rate improves constantly in time,
The deposition quality of this layer also significantly improves.
It is furthermore preferred that cover one layer of silk screen again on PET protection film surface, described silk screen is filigree or carbon
Element net；One layer of second PET protection film again it is coated with on silk screen surface.
It is furthermore preferred that in the second PET protection film wear-resisting layer covering, wearing layer is by transparent propene acid layer structure
Become.
It is furthermore preferred that cover in the second PET protection film increase between heat insulation enhancement layer and wearing layer heat insulation
Enhancement layer；Component composition (Kg) of described heat insulation enhancement layer is as follows:
Physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) technique represents at vacuum condition
Under, use physical method, material source solid or liquid surface are gasificated into gaseous atom, molecule or
Partial ionization becomes ion, and by low-pressure gas (or plasma) process, has in matrix surface deposition
The technology of the thin film of certain specific function, wherein ionization is the physical vapor of ionizing for the situation of ion
Deposition (IPVD).The main method of physical vapour deposition (PVD) has, vacuum evaporation, sputter coating, electric arc etc.
Gas ions plating, ion film plating, and molecular beam epitaxy etc..Developing at present, physical gas phase deposition technology is not
Only can deposit metal film, alloy film, can be with deposited compound, pottery, quasiconductor, polymeric film
Deng.
Preferably, physical vapour deposition (PVD) is the physical vapour deposition (PVD) of ionizing.
Sputter coating refers in a vacuum chamber, utilizes lotus energy particle bombardment target material surface, passes through particle momentum
The atom in target and other particle are got in transmission, and make it be deposited on matrix to be formed the technology of thin film.
In magnetron sputtering, due to the action of a magnetic field, plasma slab is strapped near target surface about consumingly
In the region of 60mm, if the target particle being sputtered out is deposited directly to matrix surface, its speed is less,
Particle energy is relatively low, and film-film-substrate binding strength is poor, and low-energy atomic deposition is at matrix surface mobility
Low, easily generate the column structure thin film that porous is coarse.The most direct solution is to apply necessarily to matrix
Back bias voltage.When matrix adds back bias voltage, the ion in plasma will be acted on by back bias voltage electric field
And accelerate to fly to matrix.When arriving matrix surface, ion bom bardment matrix, and the energy that will obtain from electric field
Amount passes to matrix, causes substrate temperature to raise, therefore to select suitable back bias voltage, and water-cooled is cold
But roller.
The present invention also protects the electrostatic-adhereheat-insulating heat-insulating film obtained according to said method manufacture.
What the present invention can reach has the beneficial effect that:
(1) employing physical gas-phase deposition (PVD) is at substrate surface depositing layers of titanium, with traditional work
Unlike skill, when titanium ion deposits to substrate surface, affected by direction controlling electric field so that
Titanium layer crystal grain regular array, compactedness and directivity between titanium crystal grain had significant raising, film
Fastness strengthens, and light transmission is good.
(2) use that titanium layer is combined with titanium nitride layer makes anti-reflection effect strengthen, the overall performance of thermal isolation film
More preferably.
(3) using bias magnetically controlled sputter method deposition plating layer on titanium nitride layer, the method utilizes electromagnetism
The relative theory of field carries out plated film, and coating effect is better than common coating technique and deposition technique, it is thus achieved that
Effect of heat insulation and light transmittance are the most more preferably.
(4) increase dielectric deposition, and the method using plasma frequency-converter power gradually to strengthen is carried out
Dielectric deposition so that in deposition process, sedimentation rate improves constantly in time, the deposition of this layer
Quality also significantly improves, it is seen that the shielding rate of light district light transmittance and near infrared region light is higher, service life
Longer.
(5) increase oven wire mesh blanket, improve thermal isolation film intensity and service life further.
(6) suction type of silica gel electrostatic is utilized, when protecting film contacts with liquid crystal display screen generation, protecting film
And the pressure in the air between liquid crystal display screen diminishes, make the air that atmospheric pressure is more than between screen and film
Pressure, thus produce absorbability.
Accompanying drawing explanation
Fig. 1 is the structure chart of the electrostatic-adhereheat-insulating heat-insulating film according to the embodiment of the present invention 1；
Fig. 2 is the structure of the electrostatic-adhereheat-insulating heat-insulating film containing dielectric layer according to the embodiment of the present invention 2,3
Figure；
Fig. 3 is the structure chart of the electrostatic-adhereheat-insulating heat-insulating film according to the embodiment of the present invention 4；
Fig. 4 according to embodiments of the present invention 5 the structure chart of electrostatic-adhereheat-insulating heat-insulating film；
Fig. 5 is the structure chart of the electrostatic-adhereheat-insulating heat-insulating film according to the embodiment of the present invention 6；
Fig. 6 is the flow chart making of the present invention；
In figure: 1, remove film；2, layer of silica gel；3, scratch-resistant layer (the first PET protection film)；4, plating
Film layer；5, titanium nitride layer；6, titanium layer；7, base material；8, dielectric layer；9, silk screen；10, second
PET protection film；11, wearing layer, 12, heat insulation enhancement layer.
Detailed description of the invention
The present invention is described in detail with being embodied as evidence below in conjunction with the accompanying drawings.
Embodiment 1
(1) providing base material, base material is carbon-fiber film；
(2) use physical gas-phase deposition (PVD) at carbon-fiber film upper surface depositing layers of titanium, sinking
During Ji, deposition surface is applied a direction controlling electric field so that titanium layer grained deposits direction is consistent；
(3) semi-finished product that step (2) prepares are dried；
(4) the redeposited one layer of film plating layer of bias magnetically controlled sputter method is used；
(5) semi-finished product that step (4) prepares are dried；
(6) carbon-fiber film lower surface silicon-coating glue-line；
(7) in the layer of silica gel of carbon-fiber film lower surface, covering removes film；
(8) eventually pass dry, one-body molded obtain described electrostatic-adhereheat-insulating heat-insulating film.
Compound heat-insulation film gross thickness is 0.32mm, wherein carbon-fiber film thickness be 0.08mm, titanium layer thickness be
0.02mm, nickel oxide film plating layer thickness are 0.02mm, layer of silica gel thickness is 0.10mm, remove film thickness and are
0.10mm。
Alternatively, compound heat-insulation film gross thickness is 0.20-0.50mm, and wherein carbon-fiber film thickness is
0.06-0.10mm, titanium layer thickness are 0.01-0.05mm, nickel oxide film plating layer thickness is 0.01-
0.05mm, layer of silica gel thickness are 0.07-0.20mm, and removing film thickness is 0.05-0.10mm.
Embodiment 2
Manufacturing electrostatic-adhereheat-insulating heat-insulating film, step is as follows:
(1) providing base material, base material is carbon-fiber film；
(2) use physical gas-phase deposition (PVD) in carbon-fiber film surface depositing layers of titanium, deposition temperature
Degree is 80 DEG C, and sedimentation time is 1h, in deposition process, deposition surface is applied a vertical direction and controls
Electric field so that titanium layer crystal grain is perpendicular stripe-arrangement；
(3) titanium nitride layer deposited by physical vapour deposition (PVD) is used on titanium layer surface；
(4) being dried by the semi-finished product that step (3) prepares, drying temperature is 80 DEG C, and drying time is 2-
3h；
(5) bias magnetically controlled sputter method deposited oxide nickel film plating layer on titanium nitride layer is used；
(6) being dried by the semi-finished product that step (5) prepares, drying temperature is 100 DEG C, and drying time is
2-3h；
(7) dielectric deposition process is used to deposit silicon dioxide dielectric layer, this electrolyte on film plating layer
The method that depositing operation uses plasma frequency-converter power gradually to strengthen carries out dielectric deposition；
(8) it is coated with one layer of first PET protection film in dielectric layer surface；
(9) carbon-fiber film lower surface silicon-coating glue-line, utilizes the suction type of silica gel electrostatic to make thermal isolation film
Entirety adheres to mutually with glass；
(10) in the layer of silica gel of carbon-fiber film lower surface, covering removes film；
(11) eventually passing dry, baking temperature is 120 DEG C, and drying time is 3h, one-body molded
To described electrostatic-adhereheat-insulating heat-insulating film.
Compound heat-insulation film gross thickness is 0.50mm, wherein carbon-fiber film thickness be 0.08mm, titanium layer thickness be
0.03mm, titanium nitride layer thickness are 0.03mm, nickel oxide film plating layer thickness is 0.03mm, silicon dioxide electricity
Thickness of dielectric layers is 0.03mm, the first PET protection film thickness is 0.10mm, layer of silica gel thickness is
0.10mm, removing film thickness is 0.10mm.
Alternatively, compound heat-insulation film gross thickness is 0.30-0.90mm, and wherein carbon-fiber film thickness is
0.06-0.10mm, titanium layer thickness are 0.02-0.07mm, titanium nitride layer thickness is 0.02-0.06mm, oxygen
Change nickel film plating layer thickness be 0.01-0.06mm, silicon dioxide dielectric layer thickness be 0.02-0.06mm, the
One PET protection film thickness is 0.06-0.25mm, layer of silica gel thickness is 0.07-0.20mm, removes film thickness
For 0.04-0.10mm.
Embodiment 3
Manufacturing electrostatic-adhereheat-insulating heat-insulating film, step is as follows:
(1) providing base material, base material is carbon-fiber film；
(2) use physical gas-phase deposition (PVD) in carbon-fiber film surface depositing layers of titanium, deposition temperature
Degree is 100 DEG C, and sedimentation time is 1h, in deposition process, deposition surface is applied a vertical direction control
Electric field processed so that titanium layer crystal grain is perpendicular stripe-arrangement；
(3) titanium nitride layer deposited by physical vapour deposition (PVD) is used on titanium layer surface；
(4) being dried by the semi-finished product that step (3) prepares, drying temperature is 100 DEG C, and drying time is
3h；
(5) bias magnetically controlled sputter method deposited oxide nickel film plating layer on titanium nitride layer is used；
(6) being dried by the semi-finished product that step (5) prepares, drying temperature is 100 DEG C, and drying time is
3h；
(7) dielectric deposition process is used to deposit silicon dioxide dielectric layer, this electrolyte on film plating layer
The method that depositing operation uses plasma frequency-converter power gradually to strengthen carries out dielectric deposition；
(8) it is coated with one layer of first PET protection film in dielectric layer surface；
(9) carbon-fiber film lower surface silicon-coating glue-line, utilizes the suction type of silica gel electrostatic to make thermal isolation film
Entirety adheres to mutually with glass；
(10) in the layer of silica gel of carbon-fiber film lower surface, covering removes film；
(11) eventually passing dry, baking temperature is 140 DEG C, and drying time is 3h, one-body molded
To described electrostatic-adhereheat-insulating heat-insulating film.
Compound heat-insulation film gross thickness is 0.50mm, wherein carbon-fiber film thickness be 0.08mm, titanium layer thickness be
0.03mm, titanium nitride layer thickness are 0.03mm, nickel oxide film plating layer thickness is 0.03mm, silicon dioxide electricity
Thickness of dielectric layers is 0.03mm, the first PET protection film thickness is 0.10mm, layer of silica gel thickness is
0.10mm, removing film thickness is 0.10mm.
Alternatively, compound heat-insulation film gross thickness is 0.36-0.90mm, and wherein carbon-fiber film thickness is
0.06-0.10mm, titanium layer thickness are 0.02-0.07mm, titanium nitride layer thickness is 0.02-0.06mm, oxygen
Change nickel film plating layer thickness be 0.02-0.06mm, silicon dioxide dielectric layer thickness be 0.02-0.06mm, the
One PET protection film thickness is 0.08-0.25mm, layer of silica gel thickness is 0.08-0.20mm, removes film thickness
For 0.06-0.10mm.
Embodiment 4
Manufacturing electrostatic-adhereheat-insulating heat-insulating film, step is as follows:
(1) providing base material, base material is carbon-fiber film；
(2) use physical gas-phase deposition (PVD) in carbon-fiber film surface depositing layers of titanium, deposition temperature
Degree is 100 DEG C, and sedimentation time is 1h, in deposition process, deposition surface is applied a vertical direction control
Electric field processed so that titanium layer crystal grain is perpendicular stripe-arrangement；
(3) titanium nitride layer deposited by physical vapour deposition (PVD) is used on titanium layer surface；
(4) being dried by the semi-finished product that step (3) prepares, drying temperature is 100 DEG C, and drying time is
3h；
(5) bias magnetically controlled sputter method deposition plating layer on titanium nitride layer is used.Film plating layer therein selects
One in autoxidation silver, zinc oxide or nickel oxide；
(6) being dried by the semi-finished product that step (5) prepares, drying temperature is 100 DEG C, and drying time is
3h；
(7) dielectric deposition process is used to deposit silicon dioxide dielectric layer, this electrolyte on film plating layer
The method that depositing operation uses plasma frequency-converter power gradually to strengthen carries out dielectric deposition；
(8) it is coated with one layer of first PET protection film in dielectric layer surface；
(9) covering one layer of silk screen on the first PET protection film surface, described silk screen is filigree or carbon fiber
Silk screen；
(10) one layer of second PET protection film again it is coated with on silk screen surface；
(11) carbon-fiber film lower surface silicon-coating glue-line, utilizes the suction type of silica gel electrostatic to make heat insulation
Film entirety adheres to mutually with glass；
(12) in the layer of silica gel of carbon-fiber film lower surface, covering removes film；
(13) eventually passing dry, baking temperature is 140 DEG C, and drying time is 3h, one-body molded
To described electrostatic-adhereheat-insulating heat-insulating film.
Compound heat-insulation film gross thickness is 0.55mm, wherein carbon-fiber film thickness be 0.08mm, titanium layer thickness be
0.03mm, titanium nitride layer thickness are 0.03mm, nickel oxide film plating layer thickness is 0.03mm, silicon dioxide electricity
Thickness of dielectric layers is 0.03mm, the first PET protection film thickness is 0.05mm, screen thickness is
0.05mm, the second PET film thickness are 0.05mm, layer of silica gel thickness is 0.10mm, remove film thickness and are
0.10mm。
Alternatively, compound heat-insulation film gross thickness is 0.38-0.95mm, and wherein carbon-fiber film thickness is
0.05-0.10mm, titanium layer thickness are 0.02-0.08mm, titanium nitride layer thickness is 0.02-0.08mm, oxygen
Change nickel film plating layer thickness be 0.02-0.08mm, silicon dioxide dielectric layer thickness be 0.02-0.08mm, the
One PET protection film thickness is 0.03-0.08mm, screen thickness is 0.03-0.08mm, the second PET film is thick
Degree is 0.08-0.17mm for 0.03-0.08mm, layer of silica gel thickness, and removing film thickness is 0.06-
0.12mm。
Embodiment 5
Manufacturing electrostatic-adhereheat-insulating heat-insulating film, step is as follows:
(1) providing base material, base material is carbon-fiber film；
(2) use physical gas-phase deposition (PVD) at carbon-fiber film surface depositing layers of titanium, depositing temperature
Being 100 DEG C, sedimentation time is 1h, in deposition process, deposition surface is applied a vertical direction and controls
Electric field so that titanium layer crystal grain is perpendicular stripe-arrangement；
(3) titanium nitride layer deposited by physical vapour deposition (PVD) is used on titanium layer surface；
(4) being dried by the semi-finished product that step (3) prepares, drying temperature is 100 DEG C, and drying time is
3h；
(5) bias magnetically controlled sputter method deposition plating layer on titanium nitride layer is used.Film plating layer therein selects
One in autoxidation silver, zinc oxide or nickel oxide；
(6) being dried by the semi-finished product that step (5) prepares, drying temperature is 100 DEG C, and drying time is
3h；
(7) dielectric deposition process is used to deposit silicon dioxide dielectric layer, this electrolyte on film plating layer
The method that depositing operation uses plasma frequency-converter power gradually to strengthen carries out dielectric deposition；
(8) it is coated with one layer of first PET protection film in dielectric layer surface；
(9) covering one layer of silk screen on the first PET protection film surface, described silk screen is filigree or carbon fiber
Silk screen；
(10) one layer of second PET protection film again it is coated with on metal gauze surface；
(11) wear-resisting layer covering in the second PET protection film, wearing layer is made up of transparent propene acid layer；
(12) carbon-fiber film lower surface silicon-coating glue-line, utilizes the suction type of silica gel electrostatic to make thermal isolation film
Entirety adheres to mutually with glass；
(13) in the layer of silica gel of carbon-fiber film lower surface, covering removes film；
(14) eventually passing dry, baking temperature is 140 DEG C, and drying time is 3h, one-body molded obtains
Described electrostatic-adhereheat-insulating heat-insulating film.
Compound heat-insulation film gross thickness is 0.60mm, wherein carbon-fiber film thickness be 0.08mm, titanium layer thickness be
0.03mm, titanium nitride layer thickness are 0.03mm, nickel oxide film plating layer thickness is 0.03mm, silicon dioxide electricity
Thickness of dielectric layers is 0.03mm, the first PET protection film thickness is 0.05mm, screen thickness is
0.05mm, the second PET film thickness are 0.05mm, wearing layer thickness is 0.05mm, layer of silica gel thickness is
0.10mm, removing film thickness is 0.10mm.
Alternatively, compound heat-insulation film gross thickness is 0.40-1.00mm, and wherein carbon-fiber film thickness is
0.06-0.10mm, titanium layer thickness are 0.02-0.08mm, titanium nitride layer thickness is 0.02-0.08mm, oxygen
Change nickel film plating layer thickness be 0.02-0.08mm, silicon dioxide dielectric layer thickness be 0.02-0.08mm, the
One PET protection film thickness is 0.03-0.08mm, screen thickness is 0.03-0.08mm, the second PET film is thick
Degree is 0.03-0.08mm, wearing layer thickness is 0.02-0.07mm, layer of silica gel thickness is 0.07-
0.15mm, removing film thickness is 0.08-0.12mm.
Embodiment 6
Manufacturing electrostatic-adhereheat-insulating heat-insulating film, step is as follows:
(1) providing base material, base material is carbon-fiber film；
(2) use physical gas-phase deposition (PVD) at carbon-fiber film surface depositing layers of titanium, depositing temperature
Being 100 DEG C, sedimentation time is 1h, in deposition process, deposition surface is applied a vertical direction and controls
Electric field so that titanium layer crystal grain is perpendicular stripe-arrangement；
(3) titanium nitride layer deposited by physical vapour deposition (PVD) is used on titanium layer surface；
(4) being dried by the semi-finished product that step (3) prepares, drying temperature is 100 DEG C, and drying time is
3h；
(5) bias magnetically controlled sputter method deposition plating layer on titanium nitride layer is used.Film plating layer therein selects
One in autoxidation silver, zinc oxide or nickel oxide；
(6) being dried by the semi-finished product that step (5) prepares, drying temperature is 100 DEG C, and drying time is
3h；
(7) dielectric deposition process is used to deposit silicon dioxide dielectric layer, this electrolyte on film plating layer
The method that depositing operation uses plasma frequency-converter power gradually to strengthen carries out dielectric deposition；
(8) it is coated with one layer of first PET protection film in dielectric layer surface；
(9) covering one layer of silk screen on the first PET protection film surface, described silk screen is filigree or carbon fiber
Silk screen；
(10) one layer of second PET protection film again it is coated with on metal gauze surface；
(11) in the second PET protection film, heat insulation enhancement layer is covered；
(12) wear-resisting layer covering on heat insulation enhancement layer, wearing layer is made up of transparent propene acid layer；
(13) carbon-fiber film lower surface silicon-coating glue-line, utilizes the suction type of silica gel electrostatic to make thermal isolation film
Entirety adheres to mutually with glass；
(14) in the layer of silica gel of carbon-fiber film lower surface, covering removes film；
(15) eventually passing dry, baking temperature is 140 DEG C, and drying time is 3h, one-body molded obtains
Described electrostatic-adhereheat-insulating heat-insulating film.
Wherein, component composition (Kg) of described heat insulation enhancement layer is as follows:
Described heat insulation enhancement layer manufacture method is:
(A) EVA, polyisobutylene, titanium dioxide, zinc oxide, UV-531, UV-327 second are first weighed
Glycol monobutyl ether, hydroxy acrylic acid aqueous dispersion；
(B) the component mixing that then will weigh, stirring 1h makes its mix homogeneously；
(C) component mixed is added in extruder, carry out film extrusion, the thickness of extrusion thermal isolation film
For 0.1mm, controlling extruder temperature is 180 DEG C；
(D) thermal isolation film of extrusion molding is cooled to room temperature.
Compound heat-insulation film gross thickness is 0.70mm, wherein carbon-fiber film thickness be 0.08mm, titanium layer thickness be
0.03mm, titanium nitride layer thickness are 0.03mm, nickel oxide film plating layer thickness is 0.03mm, silicon dioxide electricity
Thickness of dielectric layers is 0.03mm, the first PET protection film thickness is 0.05mm, screen thickness is
0.05mm, the second PET film thickness are 0.05mm, heat insulation enhancement layer thickness is 0.1mm, wearing layer thickness
Being 0.10mm for 0.05mm, layer of silica gel thickness, removing film thickness is 0.10mm.
Alternatively, compound heat-insulation film gross thickness is 0.45-1.15mm, and wherein carbon-fiber film thickness is
0.06-0.10mm, titanium layer thickness are 0.02-0.08mm, titanium nitride layer thickness is 0.02-0.08mm, oxygen
Change nickel film plating layer thickness be 0.02-0.08mm, silicon dioxide dielectric layer thickness be 0.02-0.08mm, the
One PET protection film thickness is 0.03-0.08mm, screen thickness is 0.03-0.08mm, the second PET film is thick
Degree is 0.03-0.08mm, heat insulation enhancement layer thickness is 0.05-0.15mm, wearing layer thickness is 0.02-
0.07mm, layer of silica gel thickness are 0.07-0.15mm, and removing film thickness is 0.08-0.12mm.
Embodiment 7
The performance of thermal isolation film
The thermal isolation film choosing on market two kinds of thermal isolation film and the manufacture of embodiment of the present invention 1-6 is surveyed
Examination, obtains correlated performance data as shown in table 1:
The performance of the thermal isolation film that table 1 embodiment 1-6 manufactures
The thermal isolation film that the present invention manufactures as can be seen from Table 1 is at light transmittance, infrared ray rejection rate and ultraviolet
Rejection rate aspect will be far superior to existing thermal isolation film on market.
Obviously, those skilled in the art can carry out various change and modification without deviating from this to the present invention
Bright spirit and scope.If these amendments and deformation belong to the claims in the present invention and equivalent technologies thereof
Within the scope of, then the present invention also comprises these change and modification.
Claims (8)
1. a manufacture method for electrostatic-adhereheat-insulating heat-insulating film, comprises the following steps:
(1) base material is provided；
(2) employing physical gas-phase deposition (PVD) is at substrate upper surface depositing layers of titanium, to deposition table in deposition process
Face applies a direction controlling electric field so that titanium layer grained deposits direction is consistent；
(3) semi-finished product that step (2) prepares are dried；
(4) bias magnetically controlled sputter method redeposited one layer of film plating layer on the upper surface of base material is used；
(5) semi-finished product that step (4) prepares are dried；
(6) base material lower surface silicon-coating glue-line；
(7) in the layer of silica gel of base material lower surface, covering removes film；
(8) eventually pass dry, one-body molded obtain described electrostatic-adhereheat-insulating heat-insulating film；
Wherein, described base material is carbon-fiber film；The direction controlling electric field applied is vertical direction so that titanium layer crystal grain
In perpendicular stripe-arrangement；Described film plating layer is silver oxide, zinc oxide or nickel oxide.
The manufacture method of electrostatic-adhereheat-insulating heat-insulating film the most according to claim 1, it is characterised in that: at titanium layer
Surface titanium nitride layer uses physical gas-phase deposition；Between titanium layer surface and film plating layer, also deposition has nitrogen
Change titanium layer；One layer of scratch-resistant layer it is coated with on film plating layer surface.
The manufacture method of electrostatic-adhereheat-insulating heat-insulating film the most according to claim 2, it is characterised in that: described anti-
Scratch layers is PET protection film.
The manufacture method of electrostatic-adhereheat-insulating heat-insulating film the most according to claim 3, it is characterised in that: at plated film
Layer and scratch-resistant layer between be further coated with one layer of dielectric layer, described dielectric layer for use plasma frequency-converter power by
Cumulative strong method carries out the silicon dioxide dielectric layer of dielectric deposition.
The manufacture method of electrostatic-adhereheat-insulating heat-insulating film the most according to claim 4, it is characterised in that: at PET
Protecting film surface covers one layer of silk screen again, and described silk screen is filigree or carbon element net；Again it is coated with on silk screen surface
One layer of second PET protection film；Wear-resisting layer covering in the second PET protection film.
The manufacture method of electrostatic-adhereheat-insulating heat-insulating film the most according to claim 5, it is characterised in that:
Heat insulation enhancement layer is increased between the second PET protection film and wearing layer；The component composition of described heat insulation enhancement layer,
Based on Kg as follows:
The manufacture method of electrostatic-adhereheat-insulating heat-insulating film the most according to claim 6, it is characterised in that:
The depositing temperature of physical gas-phase deposition (PVD) is 50-100 DEG C, and sedimentation time is 0.5-1h；Described drying
Temperature is 80-110 DEG C, and drying time is 2-3h；Described baking temperature is 120-140 DEG C, and drying time is 3-4h.
8. can glue by electrostatic according to what the manufacture method manufacture of the electrostatic-adhereheat-insulating heat-insulating film described in claim 1-7 obtained
Attached thermal isolation film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310380346.4A CN103481565B (en) | 2013-08-28 | 2013-08-28 | A kind of electrostatic-adhereheat-insulating heat-insulating film and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310380346.4A CN103481565B (en) | 2013-08-28 | 2013-08-28 | A kind of electrostatic-adhereheat-insulating heat-insulating film and manufacture method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103481565A CN103481565A (en) | 2014-01-01 |
| CN103481565B true CN103481565B (en) | 2016-08-10 |
Family
ID=49822320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310380346.4A Expired - Fee Related CN103481565B (en) | 2013-08-28 | 2013-08-28 | A kind of electrostatic-adhereheat-insulating heat-insulating film and manufacture method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103481565B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0854202A2 (en) * | 1996-12-17 | 1998-07-22 | Asahi Glass Company Ltd. | Organic substrate provided with a light absorptive antireflection film and process for its production |
| CN201960782U (en) * | 2011-03-03 | 2011-09-07 | 江西科为薄膜新型材料有限公司 | High-heat-insulation double-applying magnetic-control sputtering heat-insulation film |
| CN103121315A (en) * | 2011-11-21 | 2013-05-29 | 核工业西南物理研究院 | Heat insulating film |
-
2013
- 2013-08-28 CN CN201310380346.4A patent/CN103481565B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0854202A2 (en) * | 1996-12-17 | 1998-07-22 | Asahi Glass Company Ltd. | Organic substrate provided with a light absorptive antireflection film and process for its production |
| CN201960782U (en) * | 2011-03-03 | 2011-09-07 | 江西科为薄膜新型材料有限公司 | High-heat-insulation double-applying magnetic-control sputtering heat-insulation film |
| CN103121315A (en) * | 2011-11-21 | 2013-05-29 | 核工业西南物理研究院 | Heat insulating film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103481565A (en) | 2014-01-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6316287B2 (en) | Method for producing highly transparent hydrogenated carbon protective coating for transparent substrates | |
| CN103496202B (en) | A kind of printing opacity thermal isolation film and manufacture method thereof | |
| CN103483719B (en) | A kind of thermal isolation film that can repeatedly paste and manufacture method | |
| CN106756792B (en) | A kind of preparation method of oxide transparent electrode film | |
| JP2009263709A (en) | Sputtering target for depositing zinc oxide thin film, and display device and solar cell having zinc oxide thin film obtained by using the target, | |
| CN109023273B (en) | Coating equipment and coating method | |
| CN105130209A (en) | High-transmittance low-cost color-adjustable low-radiation energy-saving glass and preparation method thereof | |
| CN211078928U (en) | Double-silver low-emissivity coated glass | |
| CN105951051A (en) | Method of preparing graded refractive index antireflection film by adopting oblique sputtering process | |
| CN108914064B (en) | Multi-element conductive oxide material for RPD and preparation method thereof | |
| CN104775102A (en) | Vacuum coating system combining reel-to-reel magnetron sputtering cathode and columnar multi-arc source | |
| CN103481565B (en) | A kind of electrostatic-adhereheat-insulating heat-insulating film and manufacture method thereof | |
| EP2293320B1 (en) | Method for depositing a film containing tin and niobium | |
| JPH02101160A (en) | Ion plating method | |
| CN104890322A (en) | Scratch-resistant double-sliver low-radiation coated glass capable of being toughened | |
| CN202344955U (en) | Toughened double-silver low-radiation coated glass | |
| CN218665787U (en) | Functional double-silver low-radiation coated glass | |
| CN105601125A (en) | Transparent electroconductive glass for electrochromic glass and preparation method of transparent electroconductive glass | |
| JP2008097969A (en) | Zinc oxide based transparent conductive film, and its manufacturing method | |
| CN106222618B (en) | The preparation method of SnO2 doping ZnO sputtering target material | |
| CN204644456U (en) | The vacuum coating film equipment that volume to volume magnetic control sputtering cathode combines with column multi-arc source | |
| CN108642463A (en) | A kind of preparation method for electrode laminated film before solar cell | |
| CN204779787U (en) | Magnetron sputtering target rifle | |
| US20150291812A1 (en) | Low Emissivity Glass Incorporating Phosphorescent Rare Earth Compounds | |
| CN106277838A (en) | A kind of Adhesion enhancement type radiation coated glass capable of being toughened |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160810 Termination date: 20170828 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |