CN103469236A - Copper base material cleaning agent and preparation method thereof - Google Patents
Copper base material cleaning agent and preparation method thereof Download PDFInfo
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- CN103469236A CN103469236A CN2013104525540A CN201310452554A CN103469236A CN 103469236 A CN103469236 A CN 103469236A CN 2013104525540 A CN2013104525540 A CN 2013104525540A CN 201310452554 A CN201310452554 A CN 201310452554A CN 103469236 A CN103469236 A CN 103469236A
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 85
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 85
- 239000010949 copper Substances 0.000 title claims abstract description 85
- 239000000463 material Substances 0.000 title claims abstract description 47
- 238000002360 preparation method Methods 0.000 title abstract description 18
- 239000012459 cleaning agent Substances 0.000 title abstract description 7
- 150000007524 organic acids Chemical class 0.000 claims abstract description 38
- 150000001450 anions Chemical class 0.000 claims abstract description 29
- 230000003078 antioxidant Effects 0.000 claims abstract description 27
- 239000003963 antioxidant agent Substances 0.000 claims abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000008367 deionised water Substances 0.000 claims abstract description 18
- -1 Polyoxyethylene Polymers 0.000 claims description 88
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 48
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 48
- MUBZPKHOEPUJKR-UHFFFAOYSA-N oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 48
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 36
- 239000003795 chemical substances by application Substances 0.000 claims description 33
- YGSDEFSMJLZEOE-UHFFFAOYSA-N Salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims description 32
- CXMXRPHRNRROMY-UHFFFAOYSA-N Sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 claims description 32
- 239000002253 acid Substances 0.000 claims description 32
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 32
- 239000000194 fatty acid Substances 0.000 claims description 32
- 239000003352 sequestering agent Substances 0.000 claims description 30
- 230000003213 activating Effects 0.000 claims description 29
- 239000004094 surface-active agent Substances 0.000 claims description 28
- 235000013162 Cocos nucifera Nutrition 0.000 claims description 16
- 240000007170 Cocos nucifera Species 0.000 claims description 16
- JFCQEDHGNNZCLN-UHFFFAOYSA-N Glutaric acid Chemical compound OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 16
- LVHBHZANLOWSRM-UHFFFAOYSA-N Itaconic acid Chemical compound OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 claims description 16
- CZMRCDWAGMRECN-GDQSFJPYSA-N Sucrose Natural products O([C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@H](CO)O1)[C@@]1(CO)[C@H](O)[C@@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-GDQSFJPYSA-N 0.000 claims description 16
- 150000007942 carboxylates Chemical class 0.000 claims description 16
- 150000004665 fatty acids Chemical class 0.000 claims description 16
- 235000006408 oxalic acid Nutrition 0.000 claims description 16
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 16
- 229960004889 salicylic acid Drugs 0.000 claims description 16
- 239000005720 sucrose Substances 0.000 claims description 16
- ZGTMUACCHSMWAC-UHFFFAOYSA-L disodium;2-[2-[carboxylatomethyl(carboxymethyl)amino]ethyl-(carboxymethyl)amino]acetate Chemical group [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 claims description 15
- LAGFUXOTKFAPEC-UHFFFAOYSA-N 1-(2-methylphenyl)-1,2,4-triazole Chemical compound CC1=CC=CC=C1N1N=CN=C1 LAGFUXOTKFAPEC-UHFFFAOYSA-N 0.000 claims description 12
- 229960001484 Edetic Acid Drugs 0.000 claims description 12
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 12
- 239000004141 Sodium laurylsulphate Substances 0.000 claims description 12
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical group [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 12
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims description 12
- 235000019333 sodium laurylsulphate Nutrition 0.000 claims description 12
- KCXVZYZYPLLWCC-UHFFFAOYSA-N edta Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 9
- 238000003756 stirring Methods 0.000 claims description 9
- 239000002736 nonionic surfactant Substances 0.000 claims description 8
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 claims description 7
- 229920005862 polyol Polymers 0.000 claims description 4
- 150000003077 polyols Chemical class 0.000 claims description 4
- 229910001385 heavy metal Inorganic materials 0.000 abstract description 12
- 239000012190 activator Substances 0.000 abstract 3
- 239000002738 chelating agent Substances 0.000 abstract 1
- 238000007598 dipping method Methods 0.000 abstract 1
- 238000010790 dilution Methods 0.000 description 22
- 238000000034 method Methods 0.000 description 17
- 238000004140 cleaning Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000001737 promoting Effects 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atoms Chemical class [H]* 0.000 description 2
- 230000002045 lasting Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229920001214 Polysorbate 60 Polymers 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 231100000078 corrosive Toxicity 0.000 description 1
- 231100001010 corrosive Toxicity 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000005313 fatty acid group Chemical group 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- 230000035943 smell Effects 0.000 description 1
- 230000004936 stimulating Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Abstract
The invention provides a copper base material cleaning agent. The copper base material cleaning agent is composed of, by weight, 0.05%-2% of organic acid activators, 0.05%-1% of a nonionic surface activator, 0.01%-0.6% of an anion surface activator, 0.005%-0.2% of an antioxidant, 0.005%-0.2% of a chelating agent, and the balance deionized water. In addition, the invention discloses a preparation method of the copper base material cleaning agent. The copper base material cleaning agent is free of attenuation and controlling over the attenuation, can be directly used, does not contain heavy metal, is free of residues and can meet the processing requirements for copper before hot dipping; the surface of a copper base material processed by the cleaning agent is pure and is free of dark spots, oil contaminations, fingerprints and the like; accessories obtained after tinplating are free of exposed copper, dark spots and other defects, and the surfaces of the accessories are smooth.
Description
Technical field
The invention belongs to the chemical cleaning technique field, be specifically related to a kind of copper base material clean-out system and preparation method thereof.
Background technology
According to the pre-treating process difference of plating metal on surface, pretreatment of base material technique can be divided into solvent method and shielding gas reduction method.Solvent method is that the chemical action of utilizing solvent does not reoxidize oneself its surface of protection before the copper material of oil removing, rust cleaning is immersing plating solution and, to its further activation, guarantees that plating solution and clean copper matrix surface infiltrate, and by chemical reaction with diffuse to form alloy layer.This method equipment is simple, cost is low, easy and simple to handle easy to learn, produce flexibly, can be produced in batches, can be according to product regulation and control at any time in batches.Therefore, in China, have promotional value, be necessary to be furtherd investigate.Copper base material clean-out system refers to can clean the surface of copper base material in the production technique of copper plating piece.May cause producing waste product if copper material is surperficial unholiness before copper plating, not only cause raw-material waste, and increased the production pressure of factory.
Summary of the invention
Technical problem to be solved by this invention is for above-mentioned the deficiencies in the prior art, and a kind of copper base material clean-out system is provided.This clean-out system is effectively removed the preparation of metal oxide film by adding organic acid, sequestrant etc., add anion surfactant and nonionogenic tenside simultaneously, except this characteristic of wipe oil preferably, also for metal oxide, provide after by organic acid, sequestrant solvent reaction and broken away from surperficial power.It is more far better than adding single tensio-active agent effect to experimental results show that the composite table promoting agent of interpolation.Organic acid is not only reacted with metal oxide with sour form in addition, formed complex compound in reaction, can be reduced into the organic acid form again under the condition of hydrogen, this a series of reaction can be so that clean-out system of the present invention shows well under uncovered condition, and more friendly to operator to environment than the clean-out system of inorganic acid preparation, effect is more lasting, is the optimal representation form of pickling.
For solving the problems of the technologies described above, the technical solution used in the present invention is: a kind of copper base material clean-out system, it is characterized in that, raw material by following mass percent is made: organic acid for activating agent 0.05%～2%, nonionogenic tenside 0.05%～1%, anion surfactant 0.01%～0.6%, antioxidant 0.005%～0.2%, sequestrant 0.005%～0.2%, surplus is deionized water; Described nonionogenic tenside is one or more in Determination of Polyoxyethylene Non-ionic Surfactants, polyol-based non-ionic surfactant and alcohol amide type nonionogenic tenside.
Above-mentioned a kind of copper base material clean-out system, raw material by following mass percent is made: organic acid for activating agent 0.5%～1.5%, nonionogenic tenside 0.08%～0.1%, anion surfactant 0.05%～0.5%, antioxidant 0.01%～0.15%, sequestrant 0.01%～0.15%, surplus is deionized water.
Above-mentioned a kind of copper base material clean-out system, by the raw material of following mass percent, made: organic acid for activating agent 1.5%, nonionogenic tenside 0.1%, anion surfactant 0.12%, antioxidant 0.01%, sequestrant 0.15%, surplus is deionized water.
Above-mentioned a kind of copper base material clean-out system, described organic acid for activating agent is one or more in citric acid, pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, oxysuccinic acid and succsinic acid.
Above-mentioned a kind of copper base material clean-out system, described Determination of Polyoxyethylene Non-ionic Surfactants is one or more in fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene and polyoxyethylene carboxylate; Described polyol-based non-ionic surfactant is one or more in pentaerythritol fatty ester, sucrose fatty ester and sorbitan fatty acid ester; Described alcohol amide type nonionogenic tenside is cocoanut fatty acid diethanolamide.
Above-mentioned a kind of copper base material clean-out system, described anion surfactant is Sodium dodecylbenzene sulfonate and/or sodium lauryl sulphate.
Above-mentioned a kind of copper base material clean-out system, described antioxidant is benzotriazole and/or tolyltriazole.
Above-mentioned a kind of copper base material clean-out system, described sequestrant is EDETATE DISODIUM and/or EDTA.
In addition, the present invention also provides a kind of method for preparing above-mentioned copper base material clean-out system, it is characterized in that, the method comprises the following steps:
Step 1, the organic acid for activating agent is dissolved in deionized water, obtains water white solution A;
Step 2, nonionogenic tenside, anion surfactant and sequestrant are added in deionized water, stir and obtain water white solution B;
Step 3, by solution A described in step 1 with stir after solution B described in step 2 is mixed, then add antioxidant, stir, obtain copper base material clean-out system.
The present invention compared with prior art has the following advantages:
1, in clean-out system of the present invention, add the organic acid for activating agent of low weight percentage can reduce copper based cleaning agent degassing in heat treatment process, foaming and cementation index.
2, add fatty acid group or aromatic nonionogenic tenside in clean-out system of the present invention, can increase the contact area of clean-out system and copper base material, strengthen surface profit wetting power, strengthen the seepage force of organic acid for activating agent.
3, in clean-out system of the present invention, add oxidation inhibitor can prevent alloy oxidation again.
4, the present invention adopts low toxicity, without the organic acid for activating agent of strong and stimulating smell, metal is not had to severe corrosive, to operator and environment unusual friendliness all.
5, clean-out system of the present invention is effectively removed the preparation of metal oxide film by adding organic acid, sequestrant etc., add anion surfactant and nonionogenic tenside simultaneously, except this characteristic of wipe oil preferably, also for metal oxide, provide after by organic acid, sequestrant solvent reaction and broken away from surperficial power.It is more far better than adding single tensio-active agent effect to experimental results show that the composite table promoting agent of interpolation.Organic acid is not only reacted with metal oxide with sour form in addition, formed complex compound in reaction, can be reduced into the organic acid form again under the condition of hydrogen, this a series of reaction can be so that clean-out system of the present invention shows well under uncovered condition, and more friendly to operator to environment than the clean-out system of inorganic acid preparation, effect is more lasting, is the optimal representation form of pickling.
6, clean-out system of the present invention without dilution with control dilution, can directly be used, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.Process the copper substrate surface cleaning of (soak or rinse) through clean-out system of the present invention, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Below by embodiment, technical scheme of the present invention is described in further detail.
Embodiment
Embodiment 1
The copper base material clean-out system of the present embodiment, by the raw material of following mass percent, made: organic acid for activating agent 0.05%, nonionogenic tenside 1%, anion surfactant 0.6%, antioxidant 0.005%, sequestrant 0.005%, surplus is deionized water; Described organic acid for activating agent is citric acid; Described nonionogenic tenside is alkylphenol polyoxyethylene; Described anion surfactant is Sodium dodecylbenzene sulfonate; Described antioxidant is tolyltriazole; Described sequestrant is EDETATE DISODIUM.
The preparation method of the copper base material clean-out system of the present embodiment is:
Step 1, the organic acid for activating agent is dissolved in deionized water, obtains water white solution A;
Step 2, nonionogenic tenside, anion surfactant and sequestrant are added in deionized water, stir and obtain water white solution B;
Step 3, by solution A described in step 1 with stir after solution B described in step 2 is mixed, then add antioxidant, stir, obtain copper base material clean-out system.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Embodiment 2
The copper base material clean-out system of the present embodiment is identical with embodiment 1, wherein difference is: described organic acid for activating agent is pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, oxysuccinic acid or succsinic acid, or is at least two kinds in citric acid, pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, oxysuccinic acid and succsinic acid; Described nonionogenic tenside is fatty alcohol-polyoxyethylene ether, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, sorbitan fatty acid ester or cocoanut fatty acid diethanolamide, or is at least two kinds in fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, sorbitan fatty acid ester and cocoanut fatty acid diethanolamide; Described anion surfactant is sodium lauryl sulphate or Sodium dodecylbenzene sulfonate and sodium lauryl sulphate; Described antioxidant is benzotriazole or benzotriazole and tolyltriazole; Described sequestrant is EDTA or EDETATE DISODIUM and EDTA.
The preparation method of the present embodiment is with embodiment 1.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Embodiment 3
The copper base material clean-out system of the present embodiment, by the raw material of following mass percent, made: organic acid for activating agent 2%, nonionogenic tenside 0.05%, anion surfactant 0.01%, antioxidant 0.2%, sequestrant 0.2%, surplus is deionized water; Described organic acid for activating agent is succsinic acid; Described nonionogenic tenside is cocoanut fatty acid diethanolamide; Described anion surfactant is Sodium dodecylbenzene sulfonate and sodium lauryl sulphate; Described antioxidant is benzotriazole; Described sequestrant is EDETATE DISODIUM and EDTA.
The preparation method of the present embodiment is with embodiment 1.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Embodiment 4
The copper base material clean-out system of the present embodiment is identical with embodiment 3, wherein difference is: described organic acid for activating agent is citric acid, pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid or oxysuccinic acid, or is at least two kinds in citric acid, pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, oxysuccinic acid and succsinic acid; Described nonionogenic tenside is fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester or sorbitan fatty acid ester, or is at least two kinds in fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, sorbitan fatty acid ester and cocoanut fatty acid diethanolamide; Described anion surfactant is Sodium dodecylbenzene sulfonate or sodium lauryl sulphate; Described antioxidant is tolyltriazole or benzotriazole and tolyltriazole; Described sequestrant is EDTA or EDETATE DISODIUM.
The preparation method of the present embodiment is with embodiment 1.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Embodiment 5
The copper base material clean-out system of the present embodiment, by the raw material of following mass percent, made: organic acid for activating agent 0.5%, nonionogenic tenside 0.08%, anion surfactant 0.5%, antioxidant 0.01%, sequestrant 0.01%, surplus is deionized water; Described organic acid for activating agent is citric acid, pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, oxysuccinic acid and succsinic acid; Described nonionogenic tenside is fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, sorbitan fatty acid ester and cocoanut fatty acid diethanolamide; Described anion surfactant is sodium lauryl sulphate; Described antioxidant is benzotriazole and tolyltriazole; Described sequestrant is EDTA.
The preparation method of the present embodiment is with embodiment 1.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Embodiment 6
The copper base material clean-out system of the present embodiment is identical with embodiment 5, and wherein difference is: described organic acid for activating agent is eight kinds at the most in citric acid, pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, oxysuccinic acid and succsinic acid; Described nonionogenic tenside is six kinds at the most in fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, sorbitan fatty acid ester and cocoanut fatty acid diethanolamide; Described anion surfactant is Sodium dodecylbenzene sulfonate or Sodium dodecylbenzene sulfonate and sodium lauryl sulphate; Described antioxidant is tolyltriazole or benzotriazole; Described sequestrant is EDETATE DISODIUM or EDTA and EDETATE DISODIUM.
The preparation method of the present embodiment is with embodiment 1.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Embodiment 7
The copper base material clean-out system of the present embodiment, by the raw material of following mass percent, made: organic acid for activating agent 1.5%, nonionogenic tenside 0.1%, anion surfactant 0.05%, antioxidant 0.15%, sequestrant 0.15%, surplus is deionized water; Described organic acid for activating agent is citric acid and salicylic acid; Described nonionogenic tenside is fatty alcohol-polyoxyethylene ether and sorbitan fatty acid ester; Described anion surfactant is sodium lauryl sulphate; Described antioxidant is benzotriazole and tolyltriazole; Described sequestrant is EDETATE DISODIUM and EDTA.
The preparation method of the present embodiment is with embodiment 1.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Embodiment 8
The copper base material clean-out system of the present embodiment is identical with embodiment 7, wherein difference is: described organic acid for activating agent is a kind of in citric acid, pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, oxysuccinic acid and succsinic acid or more than three kinds, be perhaps two kinds in pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, oxysuccinic acid and succsinic acid, or be the mixture of a kind of and citric acid in pentanedioic acid, methylene-succinic acid, acetic acid, sebacic acid, oxalic acid, oxysuccinic acid and succsinic acid, described nonionogenic tenside is fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, a kind of in sorbitan fatty acid ester and cocoanut fatty acid diethanolamide or more than three kinds, it is perhaps alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, in sorbitan fatty acid ester and cocoanut fatty acid diethanolamide two kinds, it is perhaps alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, the mixture of a kind of and fatty alcohol-polyoxyethylene ether in sucrose fatty ester and cocoanut fatty acid diethanolamide, described anion surfactant is Sodium dodecylbenzene sulfonate or Sodium dodecylbenzene sulfonate and sodium lauryl sulphate, described antioxidant is tolyltriazole or benzotriazole, described sequestrant is EDETATE DISODIUM or EDTA.
The preparation method of the present embodiment is with embodiment 1.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Embodiment 9
The copper base material clean-out system of the present embodiment, by the raw material of following mass percent, made: organic acid for activating agent 1.5%, nonionogenic tenside 0.1%, anion surfactant 0.12%, antioxidant 0.01%, sequestrant 0.15%, surplus is deionized water; Described organic acid for activating agent is pentanedioic acid, methylene-succinic acid, acetic acid and oxysuccinic acid; Described nonionogenic tenside is fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene, sucrose fatty ester and cocoanut fatty acid diethanolamide; Described anion surfactant is Sodium dodecylbenzene sulfonate; Described antioxidant is benzotriazole; Described sequestrant is EDTA.
The preparation method of the present embodiment is with embodiment 1.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
Embodiment 10
The copper base material clean-out system of the present embodiment is identical with embodiment 9, wherein difference is: described organic acid for activating agent is citric acid, pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, a kind of in oxysuccinic acid and succsinic acid, two kinds, more than three kinds or five kinds, it is perhaps citric acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, in oxysuccinic acid and succsinic acid four kinds, it is perhaps citric acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, in oxysuccinic acid and succsinic acid the three kinds mixtures with pentanedioic acid, it is perhaps citric acid, salicylic acid, sebacic acid, oxalic acid, in oxysuccinic acid and succsinic acid the two kinds mixtures with pentanedioic acid and methylene-succinic acid, it is perhaps citric acid, salicylic acid, sebacic acid, a kind of and pentanedioic acid in oxalic acid and succsinic acid, the mixture of methylene-succinic acid and acetic acid, described nonionogenic tenside is fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, a kind of in sorbitan fatty acid ester and cocoanut fatty acid diethanolamide, two kinds, more than three kinds or five kinds, or it is alkylphenol polyoxyethylene, polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, in sorbitan fatty acid ester and cocoanut fatty acid diethanolamide four kinds, or be polyoxyethylene carboxylate, pentaerythritol fatty ester, sucrose fatty ester, in sorbitan fatty acid ester and cocoanut fatty acid diethanolamide the three kinds mixtures with fatty alcohol-polyoxyethylene ether, or be polyoxyethylene carboxylate, pentaerythritol fatty ester, in sorbitan fatty acid ester and cocoanut fatty acid diethanolamide the two kinds mixtures with fatty alcohol-polyoxyethylene ether and alkylphenol polyoxyethylene, or be polyoxyethylene carboxylate, a kind of and fatty alcohol-polyoxyethylene ether in pentaerythritol fatty ester and sorbitan fatty acid ester, the mixture of alkylphenol polyoxyethylene and sucrose fatty ester, described anion surfactant is sodium lauryl sulphate or Sodium dodecylbenzene sulfonate and sodium lauryl sulphate, described antioxidant is tolyltriazole or tolyltriazole and benzotriazole, described sequestrant is EDETATE DISODIUM or EDETATE DISODIUM and EDTA.
The preparation method of the present embodiment is with embodiment 1.
The clean-out system of the present embodiment is without dilution and control dilution, can directly use, and containing heavy metal, noresidue, can meet before hot dip process the processing requirements to copper.The copper substrate surface cleaning of processing through the present embodiment clean-out system, without stain greasy dirt impression of the hand etc.The accessory obtained after zinc-plated is without revealing copper, the defects such as stain, and surfacing is smooth.
The above, be only preferred embodiment of the present invention, not the present invention imposed any restrictions.Every any simple modification of above embodiment being done according to the invention technical spirit, change and equivalence change, and all still belong in the protection domain of technical solution of the present invention.
Claims (9)
1. a copper base material clean-out system, it is characterized in that, raw material by following mass percent is made: organic acid for activating agent 0.05%～2%, nonionogenic tenside 0.05%～1%, anion surfactant 0.01%～0.6%, antioxidant 0.005%～0.2%, sequestrant 0.005%～0.2%, surplus is deionized water; Described nonionogenic tenside is one or more in Determination of Polyoxyethylene Non-ionic Surfactants, polyol-based non-ionic surfactant and alcohol amide type nonionogenic tenside.
2. a kind of copper base material clean-out system according to claim 1, it is characterized in that, raw material by following mass percent is made: organic acid for activating agent 0.5%～1.5%, nonionogenic tenside 0.08%～0.1%, anion surfactant 0.05%～0.5%, antioxidant 0.01%～0.15%, sequestrant 0.01%～0.15%, surplus is deionized water.
3. a kind of copper base material clean-out system according to claim 2, is characterized in that, by the raw material of following mass percent, made: organic acid for activating agent 1.5%, nonionogenic tenside 0.1%, anion surfactant 0.12%, antioxidant 0.01%, sequestrant 0.15%, surplus is deionized water.
4. according to claim 1,2 or 3 described a kind of copper base material clean-out systems, it is characterized in that, described organic acid for activating agent is one or more in citric acid, pentanedioic acid, methylene-succinic acid, acetic acid, salicylic acid, sebacic acid, oxalic acid, oxysuccinic acid and succsinic acid.
5. according to the described a kind of copper base material clean-out system of claim 1,2 or 3, it is characterized in that, described Determination of Polyoxyethylene Non-ionic Surfactants is one or more in fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene and polyoxyethylene carboxylate; Described polyol-based non-ionic surfactant is one or more in pentaerythritol fatty ester, sucrose fatty ester and sorbitan fatty acid ester; Described alcohol amide type nonionogenic tenside is cocoanut fatty acid diethanolamide.
6. according to the described a kind of copper base material clean-out system of claim 1,2 or 3, it is characterized in that, described anion surfactant is Sodium dodecylbenzene sulfonate and/or sodium lauryl sulphate.
7. according to the described a kind of copper base material clean-out system of claim 1,2 or 3, it is characterized in that, described antioxidant is benzotriazole and/or tolyltriazole.
8. according to the described a kind of copper base material clean-out system of claim 1,2 or 3, it is characterized in that, described sequestrant is EDETATE DISODIUM and/or EDTA.
9. the method prepared as copper base material clean-out system as described in claim 1,2 or 3, is characterized in that, the method comprises the following steps:
Step 1, the organic acid for activating agent is dissolved in deionized water, obtains water white solution A;
Step 2, nonionogenic tenside, anion surfactant and sequestrant are added in deionized water, stir and obtain water white solution B;
Step 3, by solution A described in step 1 with stir after solution B described in step 2 is mixed, then add antioxidant, stir, obtain copper base material clean-out system.
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