CN103391082B - The replacement circuit of low threshold voltage diode - Google Patents
The replacement circuit of low threshold voltage diode Download PDFInfo
- Publication number
- CN103391082B CN103391082B CN201310284674.4A CN201310284674A CN103391082B CN 103391082 B CN103391082 B CN 103391082B CN 201310284674 A CN201310284674 A CN 201310284674A CN 103391082 B CN103391082 B CN 103391082B
- Authority
- CN
- China
- Prior art keywords
- pmos
- voltage
- input
- circuit
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention discloses a kind of replacement circuit of low threshold voltage diode, described circuit comprises: input voltage detection circuit (100), output voltage controlling circuit (200) and output voltage switching circuit (300); Input voltage detection circuit (100) is for detecting the input voltage of input (IN) and be that the first input voltage outputs to output voltage controlling circuit (200) by input voltage step-down; Output voltage controlling circuit (200) for being switch control voltage by the anti-phase output of the first input voltage, and controls the opening and closing of output voltage switching circuit (300) by switch control voltage; When output voltage switching circuit (300) is opened, the voltage drop between input (IN) and output (OUT) is close to zero; When output voltage switching circuit (300) cuts out, reverse leakage current is zero.Solve prior art cannot when silicon materials chip internal provides a kind of conducting the defect of the low threshold voltage diode that positive output end pressure drop is very little.
Description
Technical field
The present invention relates to integrated circuit fields, particularly relate to a kind of replacement circuit when integrated circuit technology cannot provide low threshold voltage diode.
Background technology
Low threshold voltage diode is used for battery charge-discharge circuit and requires in the power supply circuits of lower conduction voltage drop, especially when supply voltage is lower, general-purpose diode due to threshold voltage higher, the supply voltage exported through diode is caused to become lower, so low threshold voltage diode just seems most important.
The voltage amplitude exported through low threshold voltage diode reduces comparatively general-purpose diode and will lack, and usually can obtain higher supply voltage; In addition, in the application scenario that some are special, supply voltage is lower, chip is more responsive to supply voltage, wish that supply power voltage is more high better, but a diode in power supply circuits, must be connected, and the technique of chip itself cannot realize low threshold voltage diode component, so common way uses external low threshold voltage diode, this also just means the cost that needs are extra.
Be illustrated in figure 1 the structural representation of conventional low threshold voltage diode, IN is diode input, OUT is diode output, the diode current flow as diode input IN specific output end OUT voltage height about 0.3V, and along with electric current increase, the pressure reduction of input IN and output OUT slightly increases; When the voltage difference of input IN specific output end OUT is for time negative, diode ends, there is the reverse leakage current of an output OUT to input IN, when the pressure reduction of output OUT to input IN is increased to a specific voltage, diode reverse breakdown, a very large electric current is had to pass through diode, if reverse breakdown current is held time shorter, cancelling in reverse voltage situation and can also recover normal characteristic, when reverse breakdown current is very large, hold time but long when, diode PN joint may melt down, cause diode fails.
Because low threshold voltage diode adopts this semi-conducting material manufacture of germanium usually, this is determined by the characteristic of Germanium semiconductor material itself, and the material that the integrated circuit fabrication process of the overwhelming majority uses at present is silicon, so cannot at the diode of the integrated low threshold voltage of the chip internal of integrated circuit.
Summary of the invention
The technical problem to be solved in the present invention is, for prior art above-mentioned cannot when silicon materials chip internal provides a kind of conducting the defect of the low threshold voltage diode that positive output end pressure drop is very little, a kind of replacement circuit of low threshold voltage diode is provided.
The technical solution adopted for the present invention to solve the technical problems is: the replacement circuit constructing a kind of low threshold voltage diode, and described circuit comprises: input voltage detection circuit, output voltage controlling circuit and output voltage switching circuit;
The two ends of described output voltage switching circuit are respectively input and output;
Described input voltage detection circuit is for detecting the input voltage of described input and be that the first input voltage outputs to described output voltage controlling circuit by described input voltage step-down; It is switch control voltage that described output voltage controlling circuit is used for the anti-phase output of described first input voltage, and controls the opening and closing of described output voltage switching circuit by described switch control voltage;
When described output voltage switching circuit is opened, the voltage drop between described input and output is close to zero; When described output voltage switching circuit cuts out, reverse leakage current is zero.
In the replacement circuit of low threshold voltage diode of the present invention, described output voltage switching circuit comprises the first PMOS and the second PMOS; Described first PMOS and the second PMOS share a N trap;
The grid of described first PMOS is connected to the grid of described second PMOS, the drain electrode of described first PMOS is connected to the source electrode of described second PMOS, the substrate of described first PMOS is connected to the drain electrode of described first PMOS, and the substrate of described second PMOS is connected to the source electrode of described second PMOS.
The source electrode of described first PMOS is as described input, and the drain electrode of described second PMOS is as described output; The common gate of described first PMOS and described second PMOS receives described switch control voltage.
In the replacement circuit of low threshold voltage diode of the present invention, described output voltage controlling circuit comprises the 3rd PMOS and the first NMOS tube;
The grid of described 3rd PMOS is connected to the grid of described first NMOS tube, the drain electrode of described 3rd PMOS is connected to the drain electrode of described first NMOS tube, the source electrode of described 3rd PMOS is connected to the drain electrode of described second PMOS, the source ground of described first NMOS tube, the substrate of described 3rd PMOS is connected to the source electrode of described 3rd PMOS, the substrate of described first NMOS tube is connected to the source electrode of described first NMOS tube
The common gate of described 3rd PMOS and the first NMOS tube receives described first input voltage; The common drain of described 3rd PMOS and the first NMOS tube exports described switch control voltage.
In the replacement circuit of low threshold voltage diode of the present invention, described input voltage detection circuit comprises the first divider resistance and the second divider resistance;
The first end of described first divider resistance is connected to the source electrode of described first PMOS, and the second end of described first divider resistance is connected to one end of described second divider resistance, the other end ground connection of described second divider resistance,
The first end of described first divider resistance is for receiving described input voltage, and the second end of described first divider resistance exports described first input voltage.
Implement the replacement circuit of low threshold voltage diode of the present invention, there is following beneficial effect: by input voltage detection circuit detect input input voltage and be that the first input voltage outputs to output voltage controlling circuit by described input voltage step-down; The anti-phase output of described first input voltage is switch control voltage by described output voltage controlling circuit, and controls the opening and closing of output voltage switching circuit by described switch control voltage, and then realizes the conducting and the cut-off that substitute low threshold voltage diode; When described output voltage switching circuit is opened, the voltage drop between described input and output is close to zero; When described output voltage switching circuit cuts out, reverse leakage current is zero, solve prior art above-mentioned cannot when silicon materials chip internal provides a kind of conducting the defect of the low threshold voltage diode that positive output end pressure drop is very little, a kind of replacement circuit of low threshold voltage diode is provided.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing:
Fig. 1 is the structural representation of conventional low threshold voltage diode;
Fig. 2 is the electrical block diagram of the most preferred embodiment of the replacement circuit of low threshold voltage diode of the present invention;
Fig. 3 is the domain of output voltage switching circuit in Fig. 2;
Fig. 4 is the input and output sequential chart in Fig. 2.
Embodiment
In order to there be understanding clearly to technical characteristic of the present invention, object and effect, now contrast accompanying drawing and describe the specific embodiment of the present invention in detail.
With reference to figure 2, it is the electrical block diagram of the most preferred embodiment of the replacement circuit of low threshold voltage diode of the present invention.
A replacement circuit for low threshold voltage diode, for chip internal, circuit comprises: input voltage detection circuit 100, output voltage controlling circuit 200, output voltage switching circuit 300; The two ends of output voltage switching circuit 300 are respectively as the input IN of low threshold voltage diode and output OUT.
Input voltage detection circuit 100 is for detecting the input voltage of input IN and be that the first input voltage outputs to output voltage controlling circuit 200 by input voltage step-down; Output voltage controlling circuit 200 for being switch control voltage by the anti-phase output of the first input voltage, and controls the opening and closing of output voltage switching circuit 300 by switch control voltage, and then realizes the conducting and the cut-off that substitute low threshold voltage diode;
When output voltage switching circuit 300 is opened, voltage drop between input and output is close to zero, voltage drop is for being less than 200 millivolts, concrete voltage drop value is determined by the size of output switch circuit 300, the output voltage switching circuit 300 larger voltage drop value used is less, can be low to tens millivolts; When output voltage switching circuit 300 cuts out, reverse leakage current is zero.
In concrete most preferred embodiment:
The grid that output voltage switching circuit 300 comprises the first PMOS MP1 and the second PMOS MP2: the first PMOS MP1 is connected to the grid of the second PMOS MP2, the drain electrode of the first PMOS MP1 is connected to the source electrode (in figure 2 in n2 node) of the second PMOS MP2, and the substrate of the second PMOS MP2 is connected to the source electrode of the second PMOS MP2.
The source electrode of the first PMOS MP1 as input IN, as in Fig. 2 IN end, the drain electrode of the second PMOS MP2 as output OUT, as in Fig. 2 OUT end; The common gate of the first PMOS MP1 and the second PMOS MP2 (in figure 2 in n1 node) receiving key control voltage.
With reference to the domain that figure 3 is output voltage switching circuits 300 in Fig. 2;
First PMOS MP1 and the second PMOS MP2 shares a N trap 50, and their trap potential is identical, and node n2 is N trap 50 current potential of the first PMOS MP1 and the second PMOS MP2.
The lifting of N trap 50 current potential is caused by the forward conduction PN junction source to N trap 50, and N trap 50 voltage follow IN holds the rising of input voltage and raises.It should be noted that due to when the first PMOS MP1 and the second PMOS MP2 conducting, the characteristic of PMOS itself, the pressure drop between drain electrode and source electrode is very little, and close to zero, namely the input IN of replacement circuit and the pressure drop of output OUT are close to zero.
It should be noted that, in the present embodiment, the substrate of the first PMOS MP1 is connected to the drain electrode of the first PMOS MP1, the substrate of other metal-oxide-semiconductor is all receive source electrode, N trap 50 current potential of the first PMOS MP1 is received drain electrode and can be utilized body bias effect, make the threshold voltage of the first PMOS MP1 pipe more negative when IN holds input voltage to decline, more easily close.Specifically, the connected mode of the first PMOS MP1 pipe N trap 50 current potential, make when IN holds input voltage to reduce, the decrease speed of the first PMOS MP1 pipe trap potential holds the decrease speed of input voltage slow than IN, the a succession of reflection brought thus, result in PMOS first PMOS MP1 and the second PMOS MP2 closing velocity faster, thus create the diode unilateral conduction characteristic of circuit of the present invention.
In brief, when IN holds input voltage to raise, OUT holds output voltage to follow rising, and the pressure drop between output voltage and input voltage is close to zero, IN well can close the first PMOS MP1 and the second PMOS MP2 again when holding input voltage to reduce, which forms the characteristic being similar to diode, forward conduction, oppositely end.So can to solve well in prior art cannot when silicon materials chip internal provides a kind of conducting the defect of the low threshold voltage diode that positive output end pressure drop is very little, diode replacement circuit of the present invention pressure drop when conducting is very little, close to zero, be highly suitable for the lower chip again of supply voltage to supply voltage than more sensitive special occasions, and can realize closing fast, when closing, almost there is no anti-phase leakage current, avoid in prior art when reverse breakdown current is very large, hold time but long when, the PN of diode saves the risk that may melt down.And diode of the present invention is applicable to the material that integrated circuit fabrication process uses is silicon occasion, does not need to use external low threshold voltage diode, save cost.
Output voltage controlling circuit 200 comprises the 3rd PMOS MP3 and the first NMOS tube MN1;
The grid of the 3rd PMOS MP3 is connected to the grid of the first NMOS tube MN1, the drain electrode of the 3rd PMOS MP3 is connected to the drain electrode of the first NMOS tube MN1, the source electrode of the 3rd PMOS MP3 is connected to the drain electrode of the second PMOS MP2, the source ground of the first NMOS tube MN1, the substrate of the 3rd PMOS MP3 is connected to the source electrode of the 3rd PMOS MP3, the substrate of the first NMOS tube MN1 is connected to the source electrode of the first NMOS tube MN1
The common gate of the 3rd PMOS MP3 and the first NMOS tube MN1 receives the first input voltage; The common drain output switch control voltage of the 3rd PMOS MP3 and the first NMOS tube MN1.Output voltage controlling circuit 200 is mainly in order to control conducting and the quick closedown of output voltage switching circuit 300.
Control the conducting of output voltage switching circuit 300, mainly pass through the grid of switch control voltage to above-mentioned first PMOS MP1 and the second PMOS MP2 of output low level, thus control the conducting of the first PMOS MP1 and the second PMOS MP2.
Controlling the quick closedown of output voltage switching circuit 300, mainly by exporting the grid of the quick switch control voltage raised to above-mentioned first PMOS MP1 and the second PMOS MP2, thus controlling the quick closedown of the first PMOS MP1 and the second PMOS MP2.
Input voltage detection circuit 100 comprises the first divider resistance R1 and the second divider resistance R2;
The first end of the first divider resistance R1 is connected to the source electrode of the first PMOS MP1, second end of the first divider resistance R1 is connected to one end (in figure 2 in n0 node) of the second divider resistance R2, the other end ground connection of the second divider resistance R2, the first end of the first divider resistance R1 is for receiving input voltage, and second end of the first divider resistance R1 exports the first input voltage.
The value of the first input voltage is determined by the resistance of the first divider resistance R1 and the second divider resistance R2, in most preferred embodiment, the resistance of the first divider resistance R1 and the second divider resistance R2 is equal, so, then when simulating diode is closed, first input voltage is above-mentioned output voltage controlling circuit 200(negative circuit) trigger point, now anti-phase gain is maximum, and then make the change of the first input voltage (rising) more a lot of soon than the change (decline) of input voltage, the output voltage of output is caused to change (decline) thus very slow, final effect makes output voltage only lower than the input voltage before change.
Below in conjunction with concrete sequential chart in detail operation principle of the present invention is described in detail:
With reference to figure 4, it is the input and output sequential chart in Fig. 2.
1) when IN holds input signal to change from GND to VCC, the first end of the first divider resistance R1 of input voltage detection circuit 100 is connected to the IN end in replacement circuit thus reception input voltage, the second end export the first input voltage, namely the voltage of n0 node is produced, because preferred R1=R2 in the present embodiment, the first input voltage equals the half of input voltage.Voltage due to n0 node is high level, cause the 3rd PMOS MP3 cut-off, first NMOS tube MN1 conducting, due to the source ground of the first NMOS tube MN1, after conducting, the voltage of n0 node is low level, and then make the first PMOS MP1 and the equal conducting of the second PMOS MP2, along with IN holds the rising of input voltage, the voltage follow IN of n2 node holds input voltage to raise, and n1 node voltage is maintained low, first PMOS MP1 and the equal conducting of the second PMOS MP2, OUT holds output voltage to start to raise.
2) when IN holds input signal to stabilize to VCC, n0 node voltage stabilizes to VCC/2, and now n1 node is maintained low level all the time, and the first PMOS MP1 and the second PMOS MP2 is all in conducting state, and OUT holds output voltage to reach and holds identical voltage with IN.
3) when IN holds input signal to change from VCC to GND, be VCC/2 when n0 node voltage starts, be in the inverter trigger point that the 3rd PMOS MP3 and the first NMOS tube MN1 forms, now inverter gain is maximum, when IN holds input voltage to decline, n0 follows IN and holds input voltage to decline, the voltage that n1 holds is due to the amplification of inverter, change is faster than n0 end a lot, when IN holds input voltage to start to decline, first PMOS MP1 and the second PMOS MP2 does not all close completely, OUT holds output voltage input voltage can be held to decline with IN, but decrease speed holds input voltage slow than IN, along with the quick rising of n1 node voltage, OUT holds output voltage decrease speed more and more slower, final first PMOS MP1 and the second PMOS MP2 all ends, OUT holds output voltage to remain unchanged.
4) after IN holds input signal IN to stabilize to GND, n0 node voltage is the 0, first NMOS tube MN1 cut-off, 3rd PMOS MP3 conducting, n1 node voltage equals OUT and holds output voltage, and the first PMOS MP1 and the second PMOS MP2 ends, and OUT holds output voltage to remain unchanged.
From the above analysis, the replacement circuit of the low threshold voltage diode in the present invention does not need particular semiconductor production technology, any general CMOS technology can use, and the pressure drop after conducting between input and output is close to 0, this is also better than external low threshold voltage diode behavior.When IN holds input voltage to be VCC, OUT holds output voltage to be also VCC.When IN holds input voltage to be GND, OUT holds output voltage only lower than VCC.
By reference to the accompanying drawings embodiments of the invention are described above; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; instead of it is restrictive; those of ordinary skill in the art is under enlightenment of the present invention; do not departing under the ambit that present inventive concept and claim protect, also can make a lot of form, these all belong within protection of the present invention.
Claims (2)
1. a replacement circuit for low threshold voltage diode, is characterized in that, described circuit comprises: input voltage detection circuit (100), output voltage controlling circuit (200) and output voltage switching circuit (300);
The two ends of described output voltage switching circuit (300) are respectively input (IN) and output (OUT);
Described input voltage detection circuit (100) is for detecting the input voltage of described input (IN) and be that the first input voltage outputs to described output voltage controlling circuit (200) by described input voltage step-down; Described output voltage controlling circuit (200) for being switch control voltage by the anti-phase output of described first input voltage, and controls the opening and closing of described output voltage switching circuit (300) by described switch control voltage;
When described output voltage switching circuit (300) is opened, the voltage drop between described input (IN) and output (OUT) is close to zero; When described output voltage switching circuit (300) is closed, reverse leakage current is zero;
Described output voltage switching circuit (300) comprises the first PMOS (MP1) and the second PMOS (MP2); Described first PMOS (MP1) and the second PMOS (MP2) share a N trap (50);
The grid of described first PMOS (MP1) is connected to the grid of described second PMOS (MP2), the drain electrode of described first PMOS (MP1) is connected to the source electrode of described second PMOS (MP2), the substrate of described first PMOS (MP1) is connected to the drain electrode of described first PMOS (MP1), and the substrate of described second PMOS (MP2) is connected to the source electrode of described second PMOS (MP2);
The source electrode of described first PMOS (MP1) is as described input (IN), and the drain electrode of described second PMOS (MP2) is as described output (OUT); Described first PMOS (MP1) receives described switch control voltage with the common gate of described second PMOS (MP2);
Described output voltage controlling circuit (200) comprises the 3rd PMOS (MP3) and the first NMOS tube (MN1);
The grid of described 3rd PMOS (MP3) is connected to the grid of described first NMOS tube (MN1), the drain electrode of described 3rd PMOS (MP3) is connected to the drain electrode of described first NMOS tube (MN1), the source electrode of described 3rd PMOS (MP3) is connected to the drain electrode of described second PMOS (MP2), the source ground of described first NMOS tube (MN1), the substrate of described 3rd PMOS (MP3) is connected to the source electrode of described 3rd PMOS (MP3), the substrate of described first NMOS tube (MN1) is connected to the source electrode of described first NMOS tube (MN1),
The common gate of described 3rd PMOS (MP3) and the first NMOS tube (MN1) receives described first input voltage; The common drain of described 3rd PMOS (MP3) and the first NMOS tube (MN1) exports described switch control voltage.
2. the replacement circuit of low threshold voltage diode according to claim 1, is characterized in that, described input voltage detection circuit (100) comprises the first divider resistance (R1) and the second divider resistance (R2);
The first end of described first divider resistance (R1) is connected to the source electrode of described first PMOS (MP1), second end of described first divider resistance (R1) is connected to one end of described second divider resistance (R2), the other end ground connection of described second divider resistance (R2)
The first end of described first divider resistance (R1) is for receiving described input voltage, and the second end of described first divider resistance (R1) exports described first input voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310284674.4A CN103391082B (en) | 2013-07-08 | 2013-07-08 | The replacement circuit of low threshold voltage diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310284674.4A CN103391082B (en) | 2013-07-08 | 2013-07-08 | The replacement circuit of low threshold voltage diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103391082A CN103391082A (en) | 2013-11-13 |
| CN103391082B true CN103391082B (en) | 2016-03-02 |
Family
ID=49535259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310284674.4A Active CN103391082B (en) | 2013-07-08 | 2013-07-08 | The replacement circuit of low threshold voltage diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103391082B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116056286B (en) * | 2023-04-03 | 2023-06-09 | 东莞锐视光电科技有限公司 | Method, device, medium and electronic equipment for reducing voltage drop of light source circuit |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4678947A (en) * | 1984-10-05 | 1987-07-07 | Signetics Corporation | Simulated transistor/diode |
| JPH01117660A (en) * | 1987-10-30 | 1989-05-10 | Fanuc Ltd | Rectifyer circuit |
| CN201422078Y (en) * | 2008-10-07 | 2010-03-10 | 漳州科华技术有限责任公司 | Three-stage intelligent regulating transducer device used for energy-saving elevator safety protection power supply |
| CN102265258A (en) * | 2008-10-23 | 2011-11-30 | 李持国际有限公司 | System and method for emulating an ideal diode in a power control device |
| CN202750010U (en) * | 2012-07-13 | 2013-02-20 | 深圳市英威腾电气股份有限公司 | Linear voltage-decreasing circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030042938A1 (en) * | 2001-09-06 | 2003-03-06 | Shvarts Emanuil Y. | Equivalent shottky or emanuil shvarts diode (ESD) |
-
2013
- 2013-07-08 CN CN201310284674.4A patent/CN103391082B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4678947A (en) * | 1984-10-05 | 1987-07-07 | Signetics Corporation | Simulated transistor/diode |
| JPH01117660A (en) * | 1987-10-30 | 1989-05-10 | Fanuc Ltd | Rectifyer circuit |
| CN201422078Y (en) * | 2008-10-07 | 2010-03-10 | 漳州科华技术有限责任公司 | Three-stage intelligent regulating transducer device used for energy-saving elevator safety protection power supply |
| CN102265258A (en) * | 2008-10-23 | 2011-11-30 | 李持国际有限公司 | System and method for emulating an ideal diode in a power control device |
| CN202750010U (en) * | 2012-07-13 | 2013-02-20 | 深圳市英威腾电气股份有限公司 | Linear voltage-decreasing circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103391082A (en) | 2013-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103575964B (en) | A kind of over-current detection circuit of power switch pipe and method | |
| CN102709883B (en) | Under-voltage protection circuit of switch power source | |
| CN102790516B (en) | Feedback clamping power metal oxide semiconductor (MOS) pipe drive circuit for power supply management | |
| CN104979813B (en) | A kind of current-limiting protection circuit | |
| CN108958344A (en) | substrate bias generating circuit | |
| CN103001475B (en) | Short-circuit protecting circuit applied to synchronous boost type direct current-direct current (DC-DC) converter | |
| CN104682931B (en) | A kind of adjustable power on and off reset circuit of voltage | |
| CN103018588B (en) | Low-power-consumption anti-interference three-state input detection circuit | |
| CN103217615B (en) | Output short-circuit detection circuit | |
| CN103391082B (en) | The replacement circuit of low threshold voltage diode | |
| CN106300248B (en) | A kind of under-voltage protecting circuit of current control mode | |
| CN203772424U (en) | Infrared readout circuit | |
| CN103414329B (en) | Voltage peak value locking circuit | |
| CN105469818A (en) | Read-out amplifier | |
| CN103391080B (en) | A kind of cmos switch circuit | |
| CN106411303A (en) | Anti-creeping MOS switch structure applicable to integrated circuit | |
| CN105245221A (en) | P-channel field effect transistor single event effect resistance reinforcing circuit | |
| CN204031117U (en) | The power transistor of self-adjusting temperature | |
| CN202616756U (en) | Undervoltage protecting circuit of switching power supply | |
| CN104242696A (en) | Input power supply type vibration energy obtaining interface circuit | |
| CN103336546A (en) | Low-voltage difference voltage stabilizing circuit with current-limiting protection function under double high power supply voltage input | |
| CN202903932U (en) | Anti-interference three-state input detection circuit with low power consumption | |
| CN207339633U (en) | A kind of drive circuit of improved power switch pipe | |
| CN203312782U (en) | Negative-pressure overvoltage protection circuit with port loaded protection switch | |
| CN205320050U (en) | Comparator circuit with clamp function |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 518057, room 10, building 5-8, Changhong science and technology building, twelve South tech Road, Nanshan District Science Park, Shenzhen, Guangdong Patentee after: Huimang Microelectronics (Shenzhen) Co.,Ltd. Address before: 518057, room 10, building 5-8, Changhong science and technology building, twelve South tech Road, Nanshan District Science Park, Shenzhen, Guangdong Patentee before: FREMONT MICRO DEVICES (SZ) Ltd. |