CN103378279B - 发光二极管封装结构制造方法 - Google Patents
发光二极管封装结构制造方法 Download PDFInfo
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- CN103378279B CN103378279B CN201210127822.7A CN201210127822A CN103378279B CN 103378279 B CN103378279 B CN 103378279B CN 201210127822 A CN201210127822 A CN 201210127822A CN 103378279 B CN103378279 B CN 103378279B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
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- 238000005520 cutting process Methods 0.000 claims description 8
- 125000006850 spacer group Chemical group 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 4
- 238000010923 batch production Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (2)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610012373.XA CN105702844B (zh) | 2012-04-27 | 2012-04-27 | 发光二极管封装结构及其制造方法 |
CN201610012430.4A CN105702830B (zh) | 2012-04-27 | 2012-04-27 | 发光二极管封装结构及其制造方法 |
CN201610012880.3A CN105742460B (zh) | 2012-04-27 | 2012-04-27 | 发光二极管封装结构及其制造方法 |
CN201610012901.1A CN105742468B (zh) | 2012-04-27 | 2012-04-27 | 发光二极管封装结构及其制造方法 |
CN201210127822.7A CN103378279B (zh) | 2012-04-27 | 2012-04-27 | 发光二极管封装结构制造方法 |
TW101116118A TWI599077B (zh) | 2012-04-27 | 2012-05-07 | 發光二極體封裝結構及其製造方法 |
US13/868,111 US20130285097A1 (en) | 2012-04-27 | 2013-04-23 | Side-view light emitting diode package and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210127822.7A CN103378279B (zh) | 2012-04-27 | 2012-04-27 | 发光二极管封装结构制造方法 |
Related Child Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610012880.3A Division CN105742460B (zh) | 2012-04-27 | 2012-04-27 | 发光二极管封装结构及其制造方法 |
CN201610012373.XA Division CN105702844B (zh) | 2012-04-27 | 2012-04-27 | 发光二极管封装结构及其制造方法 |
CN201610012430.4A Division CN105702830B (zh) | 2012-04-27 | 2012-04-27 | 发光二极管封装结构及其制造方法 |
CN201610012901.1A Division CN105742468B (zh) | 2012-04-27 | 2012-04-27 | 发光二极管封装结构及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103378279A CN103378279A (zh) | 2013-10-30 |
CN103378279B true CN103378279B (zh) | 2016-08-31 |
Family
ID=49463107
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210127822.7A Expired - Fee Related CN103378279B (zh) | 2012-04-27 | 2012-04-27 | 发光二极管封装结构制造方法 |
CN201610012373.XA Expired - Fee Related CN105702844B (zh) | 2012-04-27 | 2012-04-27 | 发光二极管封装结构及其制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610012373.XA Expired - Fee Related CN105702844B (zh) | 2012-04-27 | 2012-04-27 | 发光二极管封装结构及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20130285097A1 (zh) |
CN (2) | CN103378279B (zh) |
TW (1) | TWI599077B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111276594A (zh) * | 2015-09-18 | 2020-06-12 | 新世纪光电股份有限公司 | 发光元件封装结构 |
CN111211206A (zh) | 2015-09-18 | 2020-05-29 | 新世纪光电股份有限公司 | 发光装置及其制造方法 |
WO2017062119A1 (en) * | 2015-10-07 | 2017-04-13 | Koninklijke Philips N.V. | FLIP-CHIP SMT LEDs WITH VARIABLE NUMBER OF EMITTING SURFACES |
JP2018536297A (ja) * | 2015-11-10 | 2018-12-06 | 億光電子工業股▲ふん▼有限公司Everlight Electronics Co.,Ltd. | 発光ダイオードデバイスおよびその製造方法 |
JP6891530B2 (ja) * | 2017-02-20 | 2021-06-18 | 日亜化学工業株式会社 | 発光装置 |
CN108987548A (zh) * | 2017-05-31 | 2018-12-11 | 展晶科技(深圳)有限公司 | 发光二极管封装结构及其制作方法、平面光源模组 |
CN107681036A (zh) * | 2017-08-22 | 2018-02-09 | 深圳市芯联电股份有限公司 | Led封装结构 |
US10651351B1 (en) * | 2018-11-13 | 2020-05-12 | Cree, Inc. | Light emitting diode packages |
CN112259571B (zh) * | 2020-10-22 | 2023-05-30 | 武汉华星光电技术有限公司 | 柔性背板及显示装置 |
CN112968089B (zh) * | 2020-11-26 | 2022-04-15 | 重庆康佳光电技术研究院有限公司 | 发光器件及其制作方法、背板及其制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1652366A (zh) * | 2004-02-04 | 2005-08-10 | 西铁城电子股份有限公司 | 发光二极管 |
CN101393948A (zh) * | 2007-09-18 | 2009-03-25 | 宏齐科技股份有限公司 | 前后包夹式的发光二极管封装结构及其封装方法 |
JP2011166117A (ja) * | 2010-02-09 | 2011-08-25 | Everlight Electronics Co Ltd | 発光ダイオード・パッケージ構造およびその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1204151A4 (en) * | 2000-04-24 | 2006-10-18 | Rohm Co Ltd | SIDE-EMITTING LUMINAIRE DIODE AND MANUFACTURING METHOD |
JP4789350B2 (ja) * | 2001-06-11 | 2011-10-12 | シチズン電子株式会社 | 発光ダイオードの製造方法 |
KR100550856B1 (ko) * | 2003-06-03 | 2006-02-10 | 삼성전기주식회사 | 발광 다이오드(led) 소자의 제조 방법 |
JP5226077B2 (ja) * | 2008-10-15 | 2013-07-03 | 株式会社小糸製作所 | 発光モジュール、発光モジュールの製造方法、および灯具ユニット |
CN101826516B (zh) * | 2009-03-02 | 2012-06-13 | 展晶科技(深圳)有限公司 | 侧面出光型发光组件封装结构及其制造方法 |
-
2012
- 2012-04-27 CN CN201210127822.7A patent/CN103378279B/zh not_active Expired - Fee Related
- 2012-04-27 CN CN201610012373.XA patent/CN105702844B/zh not_active Expired - Fee Related
- 2012-05-07 TW TW101116118A patent/TWI599077B/zh active
-
2013
- 2013-04-23 US US13/868,111 patent/US20130285097A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1652366A (zh) * | 2004-02-04 | 2005-08-10 | 西铁城电子股份有限公司 | 发光二极管 |
CN101393948A (zh) * | 2007-09-18 | 2009-03-25 | 宏齐科技股份有限公司 | 前后包夹式的发光二极管封装结构及其封装方法 |
JP2011166117A (ja) * | 2010-02-09 | 2011-08-25 | Everlight Electronics Co Ltd | 発光ダイオード・パッケージ構造およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103378279A (zh) | 2013-10-30 |
TWI599077B (zh) | 2017-09-11 |
TW201344988A (zh) | 2013-11-01 |
CN105702844A (zh) | 2016-06-22 |
US20130285097A1 (en) | 2013-10-31 |
CN105702844B (zh) | 2018-07-20 |
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Legal Events
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C06 | Publication | ||
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150924 Address after: 518109 Guangdong province Shenzhen city Longhua District Dragon Road No. 83 wing group building 11 floor Applicant after: SCIENBIZIP CONSULTING (SHEN ZHEN) CO., LTD. Address before: 518109 Guangdong city of Shenzhen province Baoan District Longhua Street tabulaeformis Industrial Zone tenth east two Ring Road No. two Applicant before: Zhanjing Technology (Shenzhen) Co., Ltd. Applicant before: Advanced Optoelectronic Technology Inc. |
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Effective date of registration: 20151208 Address after: 201424 Shanghai city Fengxian District Tuo Village barracks Lin Zhen No. 598 building ninth room 111 Applicant after: Shanghai Lirui Network Technology Co., Ltd. Address before: 518109 Guangdong province Shenzhen city Longhua District Dragon Road No. 83 wing group building 11 floor Applicant before: SCIENBIZIP CONSULTING (SHEN ZHEN) CO., LTD. |
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Effective date of registration: 20160822 Address after: 100086 Beijing city Haidian District North Sanhuan Road 43, Tsing Wun contemporary building 12A11 Patentee after: BEIJING ZHITAO SCIENCE & TECHNOLOGY CO., LTD. Address before: 201424 Shanghai city Fengxian District Tuo Village barracks Lin Zhen No. 598 building ninth room 111 Patentee before: Shanghai Lirui Network Technology Co., Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20161009 Address after: 518106 Guangdong Guangming New District of Shenzhen city streets Gongming Guancheng Low Carbon Industrial Park A building 10 floor Patentee after: Shenzhen square light source technology Co., Ltd. Address before: 100086 Beijing city Haidian District North Sanhuan Road 43, Tsing Wun contemporary building 12A11 Patentee before: BEIJING ZHITAO SCIENCE & TECHNOLOGY CO., LTD. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160831 Termination date: 20210427 |
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CF01 | Termination of patent right due to non-payment of annual fee |