CN103377993B - Method for forming hole - Google Patents
Method for forming hole Download PDFInfo
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- CN103377993B CN103377993B CN201210122591.0A CN201210122591A CN103377993B CN 103377993 B CN103377993 B CN 103377993B CN 201210122591 A CN201210122591 A CN 201210122591A CN 103377993 B CN103377993 B CN 103377993B
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Abstract
The invention relates to a method for forming a hole. The method is characterized in that a substrate is provided, a medium layer is formed on the substrate, a first imaging mask layer and a second imaging mask layer are formed on the medium layer, and the position of the hole is defined by a graph jointly formed by the first imaging mask layer and the second imaging mask layer, wherein the position of the hole is defined by the first imaging mask layer in the line direction, and the position of the hole is defined by the second imaging mask layer in the row direction. The first imaging mask layer and the second imaging mask layer serve as masks, and a dry method is used for etching the medium layer to form the hole. By means of the technical scheme, the problem, in the prior art, that adjacent holes are adhered to each other can be solved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to the method forming hole.
Background technology
Fig. 1 ~ Fig. 4 is the cross-sectional view of the method forming hole in prior art, and with reference to figure 1 ~ Fig. 4, the method forming hole in prior art is: with reference to figure 1, provides substrate 10, forms dielectric layer 11 on the substrate 10; With reference to figure 2, dielectric layer 11 forms photoresist layer 12, have opening 121 in this photoresist layer 12, opening 121 defines the position in hole; With reference to figure 3, form hole 111 with photoresist layer 12 for mask dry etching dielectric layer 11; With reference to figure 4, grey method removes photoresist layer 12.Wherein, this hole can be contact hole (contact), also can be through hole (via).
But along with the critical size of semiconductor device is more and more less, the pitch-row (pitch) of adjacent holes is also more and more less, when pitch-row is less than 100nm, is difficult to the position utilizing photoresist layer define apertures.Due to, during graphical photoresist layer, the restriction of exposure resolution ratio and the impact of optical proximity effect, there will be the phenomenon of adjacent holes figure adhesion.After in hole, filled conductive material forms contact plug or plug, adjacent plug there will be the phenomenon of the conducting that contacts with each other, thus causes the inefficacy of device.Such as, Fig. 5 is the schematic layout pattern of a memory cell in the SRAM memory of the specific embodiment of the invention, with reference to figure 5, SRAM memory comprises multiple transistor, each transistor comprises grid 51, is positioned at the active area 52 of grid 51 both sides, contact plug is positioned on active area 52, grid 51, is coupled together by each transistor by contact plug according to predetermined mode.Due to the restriction of photoetching resolution, when forming contact hole, adjacent contact hole easily produces adhesion phenomenon, causes adjacent contact plug contact conducting, combines with reference to figure 6, such as contact plug 531 with contact plug 532 and be easily sticked together and contact conducting.
Have many methods about forming hole in prior art, such as, publication number disclosed in 12 days January in 2012 is the american documentation literature of US2012/0006523A1, but does not all solve above technical problem.
Summary of the invention
The problem that the present invention solves is that the method in prior art formation hole there will be adjacent holes adhesion.
For solving the problem, the invention provides a kind of method forming hole, comprising:
Substrate is provided, is formed with dielectric layer on the substrate;
Described dielectric layer is formed the mask layer of the first patterned mask layer and second graphical, the position of the figure define apertures that the mask layer of described first patterned mask layer and second graphical is formed jointly, wherein, described first patterned mask layer is along the position in column direction definition hole, and the mask layer of described second graphical defines the position in hole in the row direction;
With the mask layer of described first patterned mask layer and second graphical for mask, dielectric layer described in dry etching forms hole.
Optionally, the method described dielectric layer forming the first patterned mask layer comprises:
Described dielectric layer is formed advanced figure rete;
Described advanced figure rete forms the first patterned photoresist layer;
With the described advanced figure rete that described first patterned photoresist layer is mask dry etching segment thickness.
Optionally, before forming the first patterned photoresist layer, also comprise: on described advanced figure rete, form hard mask layer, before the described advanced figure rete being mask dry etching segment thickness with described first patterned photoresist layer, hard mask layer described in dry etching.
Optionally, described hard mask layer is the anti-reflecting layer of inorganic material.
Optionally, described hard mask layer is metal hard mask layer.
Optionally, the material of described metal hard mask layer is TiN or TaN.
Optionally, the method forming the first patterned photoresist layer comprises: form the first photoresist layer, expose the first photoresist layer, develop the patterned photoresist layer of formation first.
Optionally, the method forming the mask layer of second graphical comprises:
Form the photoresist layer of second graphical, cover described first patterned mask layer;
Optionally, before forming the photoresist layer of second graphical, also comprise:
Form bottom anti-reflection layer, cover described first patterned mask layer;
The photoresist layer of described second graphical is formed in described bottom anti-reflection layer.
Optionally, the material of described bottom anti-reflection layer is organic material.
Optionally, the method forming bottom anti-reflection layer comprises:
Described first patterned mask layer applies organic material layer;
Soft baking is carried out to described organic material layer, forms bottom anti-reflection layer.
Optionally, the method forming the photoresist layer of second graphical comprises: form the second photoresist layer, expose the second photoresist layer, developing forms the photoresist layer of second graphical.
Optionally, described dielectric layer is single layer structure or laminated construction.
Optionally, described hole is through hole or contact hole.
Optionally, the material of the dielectric layer of single layer structure is silica, low k dielectric materials or ultra-low k dielectric material.
Optionally, in the dielectric layer of laminated construction, the material of every one deck can be silica, low k dielectric materials or ultra-low k dielectric material.
Compared with prior art, the present invention has the following advantages:
The technical program is formed in the method in hole, a mask layer of definition hole pattern be divide into two, the i.e. mask layer of the first patterned mask layer and second graphical, the figure of the first patterned mask layer defines the position in hole along column direction i.e. the first patterned mask layer along column direction, the figure of the mask layer of second graphical in the row direction namely the mask layer of second graphical define the position in hole in the row direction, the overlapping figure of the figure of line direction and the figure of column direction makes the figure in hole; Then, with the mask layer of described first patterned mask layer and second graphical for mask, dielectric layer described in dry etching forms hole.By mask layer being divided into the mask layer of the first patterned mask layer and second graphical, the phenomenon of the mutual adhesion in adjacent hole only occurred by a photoresist layer definition hole pattern in prior art therefore can be avoided.In a particular embodiment, hole can be contact hole (contact), also can be through hole (via).
Accompanying drawing explanation
Fig. 1 ~ Fig. 4 is the cross-sectional view of the method forming hole in prior art;
Fig. 5 is the schematic layout pattern of a memory cell in the SRAM memory of the specific embodiment of the invention;
Fig. 6 is the schematic diagram of adjacent contact hole adhesion in Fig. 5;
Fig. 7 is the schematic flow sheet of the method in the formation hole of the specific embodiment of the invention;
Fig. 8 ~ Figure 16 is the structural representation of the method in the formation hole of the specific embodiment of the invention.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here to implement with multiple, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention.Therefore the present invention is not by the restriction of following public embodiment.
Fig. 7 is the schematic flow sheet of the method in the formation hole of the specific embodiment of the invention, and with reference to figure 7, the method in the formation hole of the specific embodiment of the invention comprises:
Step S71, provides substrate, is formed with dielectric layer on the substrate;
Step S72, described dielectric layer is formed the mask layer of the first patterned mask layer and second graphical, the position of the figure define apertures that the mask layer of described first patterned mask layer and second graphical is formed jointly, wherein, described first patterned mask layer is along the position in column direction definition hole, and the mask layer of described second graphical defines the position in hole in the row direction;
Step S73, with the mask layer of described first patterned mask layer and second graphical for mask, dielectric layer described in dry etching forms hole.
The essence that can better understand the present invention to make those skilled in the art, describes the present invention in detail below in conjunction with specific embodiment and accompanying drawing.
Below in conjunction with the method for formation contact hole describing the specific embodiment of the invention with reference to figure 7 and Fig. 8 ~ Figure 16 in detail.
In conjunction with reference to figure 7 and Fig. 8, perform step S71, substrate 20 is provided, described substrate 20 is formed with dielectric layer 21.In the specific embodiment of the invention, substrate 20 is also formed with device architecture (not shown), such as, transistor, shallow trench etc.Owing to not relating to the improvement of device architecture in the present invention, therefore not shown to device architecture.The material of substrate 20 can be monocrystalline silicon (Si), monocrystalline germanium (Ge), SiGe (GeSi) or carborundum (SiC); Also can be silicon-on-insulator (SOI), germanium on insulator (GOI); Or can also be other material, the III-V such as such as GaAs.Dielectric layer 21 is single layer structure or laminated construction.The material of the dielectric layer of single layer structure is silica, low k dielectric materials or ultra-low k dielectric material.In the dielectric layer of laminated construction, the material of every one deck can be silica, low k dielectric materials or ultra-low k dielectric material.
In conjunction with reference to figure 7 and Fig. 9 to Figure 13, perform step S72, described dielectric layer 21 is formed the mask layer 40 of the first patterned mask layer 30 and second graphical, the position of the common figure define apertures formed of mask layer 40 of described first patterned mask layer 30 and second graphical, wherein, described first patterned mask layer 30 is along the position in column direction definition hole, and the mask layer 40 of described second graphical defines the position in hole in the row direction.In specifically implementing the following detailed description of the present invention, form the method for the mask layer 40 of the first patterned mask layer 30 and second graphical.
Fig. 9 is the floor map of the first patterned mask layer 30, Figure 10 for forming the cross-sectional view of the first patterned mask layer 30 along the a-a direction shown in Fig. 9 on dielectric layer 21, in conjunction with reference to figure 9 and Figure 10, in the specific embodiment of the invention, the method that described dielectric layer 21 is formed the first patterned mask layer 30 comprises: on described dielectric layer 21, form advanced figure rete (advanced patterning film, be called for short APF) 31, wherein, the method forming advanced figure rete 31 is chemical vapour deposition (CVD); Described advanced figure rete 31 forms hard mask layer 32; Hard mask layer 32 forms the first patterned photoresist layer 33, and the method wherein forming the first patterned photoresist layer comprises: form the first photoresist layer, expose the first photoresist layer, develop the patterned photoresist layer of formation first.Afterwards, with reference to Figure 11, with the described advanced figure rete 31 that described first patterned photoresist layer 33 is mask dry etching hard mask layer 32, segment thickness, by the Graphic transitions of the first patterned photoresist layer 33 to hard mask layer 32, advanced figure rete 31.With reference to figure 9, first patterned mask layer 30 is along the position in column direction and definition hole, y direction, it should be noted that, do not require in first patterned mask layer 30 that all figures are all the flagpole patterns running through whole mask layer along column direction, can allow is not the flagpole pattern running through whole mask layer, as long as along the position in column direction and definition hole, y direction.
It should be noted that, with reference to Figure 11, by on the Graphic transitions of the first patterned photoresist layer 33 to hard mask layer 32 and advanced figure rete 31 time, first patterned photoresist layer 33 has been consumed, and the first patterned mask layer 30 is made up of patterned hard mask layer 32 and patterned advanced figure rete 31.When embody rule, may be consumed, also may not be consumed at the first patterned photoresist layer 33, if the first patterned photoresist layer 33 has been consumed, the rete hard mask layer 32 under it also can be consumed a part.
In this embodiment, hard mask layer 32 is anti-reflecting layer (DARC), and the material of this anti-reflecting layer is inorganic material, and the method for formation is vapour deposition; The effect of this anti-reflecting layer is the exposure that the reverberation preventing photoresist layer in exposure process affects photoresist layer, so that affects the figure of photoresist layer; When not having reverberation in exposure process and occurring, anti-reflecting layer can not be needed.
In the present invention; hard mask layer 32 is not limited to anti-reflecting layer; also can be metal hard mask layer; the material of metal hard mask layer is TiN or TaN; this metal hard mask layer not only can play the effect of anti-reflecting layer; and metal hard mask layer all has very high etching selection ratio to light photoresist or to dielectric material; in this embodiment; because metal hard mask layer has high etching selection ratio to photoresist layer; therefore this metal hard mask layer can serve as the mask layer of advanced figure rete, has been consumed rear protection advanced figure rete at photoresist layer.
It should be noted that, in the present invention, when the thickness of advanced figure rete is enough thick, during enough protective dielectric layers, hard mask layer 32 can not be needed.
Due to, the development of semiconductor technology, the characteristic size of device is more and more less, the integrated level of device is more and more higher, the depth-to-width ratio which results in hole is comparatively large, if simple layer with photoresist does the dry etching that mask carries out dielectric layer, the thickness of photoresist layer needs the thicker effect just playing stop; And the thicker photoresist layer of thickness is thicker due to thickness, there will be under-exposed problem when exposing; Therefore in the specific embodiment of the invention, utilize the mask layer comprising advanced figure rete, formed at dry etching dielectric layer in the process in hole, after other retes have been consumed, can be continued to do mask by advanced figure rete.
In the present invention, the first patterned mask layer is not limited to the specific embodiment of the invention, also can be the first patterned mask layer of other structures, as long as can play the effect of mask.
Figure 12 is the schematic layout pattern of the mask layer 40 of the first patterned mask layer 30 and second graphical, Figure 13 is the cross-sectional view of method along the b-b direction in Figure 12 of the mask layer 40 of the formation second graphical of the specific embodiment of the invention, in conjunction with reference Figure 12 and Figure 13, in the specific embodiment of the invention, the method forming the mask layer 40 of second graphical comprises: form bottom anti-reflection layer (BARC, bottom anti-reflection coating) 41, cover described first patterned mask layer 30, the material of this bottom anti-reflection layer is organic material, bottom anti-reflection layer 41 is a flood, there is no figure, that is, bottom anti-reflection layer 41 covers graphics field and the non-graphic region of the first patterned mask layer 30.Described bottom anti-reflection layer 41 forms the photoresist layer 42 of second graphical, the position in the x direction definition hole of the figure that the photoresist layer 42 of second graphical has in the row direction namely in Figure 12; The method of the photoresist layer 42 of concrete formation second graphical is: in bottom anti-reflection layer 41, form the second photoresist layer, then exposes the second photoresist layer, developing forms the photoresist layer 42 of second graphical.Although bottom anti-reflection layer 41 is not patterned immediately, in etching process, the photoresist layer 42 of second graphical can be transferred to bottom anti-reflection layer 41, therefore, when forming bottom anti-reflection layer 41, without the need to carrying out graphically bottom anti-reflection layer.
In the specific embodiment of the invention, bottom anti-reflection layer adopts organic material, organic material is in a liquid state, the method forming bottom anti-reflection layer can be: utilize the method such as spin coating or spraying to apply organic material layer on the first patterned mask layer, then carries out soft baking to organic material layer and forms bottom anti-reflection layer.Bottom anti-reflection layer can avoid the impact of the reverberation of the second photoresist layer in exposure, and, adopt the bottom anti-reflection layer of organic material, in spin coating or when dripping painting organic material, it is in white space that organic material can be filled in the figure of the first patterned mask layer fully, prevent from forming cavity, the dry etch process after impact.
It should be noted that, in the present invention, if can not reverberation be produced in the exposure of the second photoresist layer, so can not need bottom anti-reflection layer 41.
After the mask layer 40 forming second graphical, the common figure formed of mask layer 40 of the first patterned mask layer 30 and second graphical defines the position of mesopore of the present invention.It should be noted that, in the present invention, the figure of the mask layer 40 of the first patterned mask layer 30 and second graphical is not limited to the figure in the specific embodiment of the invention, can adjust according to actual conditions; According to the difference of the position in hole, the figure of the mask layer 40 of the first patterned mask layer 30 and second graphical needs to do accommodation.Even for the layout in same hole, the figure of the mask layer 40 of the first patterned mask layer 30 and second graphical is also not necessarily fixing, can adjust according to actual conditions, as long as meet the position of the first patterned mask layer 30 along column direction and definition hole, y direction, the position in the mask layer 40 of second graphical i.e. definition hole, x direction in the row direction.
Then, in conjunction with reference to Figure 14 and Figure 15, step S73, with the mask layer 40 of described first patterned mask layer 30 and second graphical for mask, described in dry etching, dielectric layer 21 forms hole 22.After forming hole 22, remove the mask layer 40 of the first patterned mask layer 30 and second graphical.Wherein, Figure 14 is the first patterned mask layer 30, the mask layer 40 of second graphical and the schematic layout pattern in hole 22, and Figure 15 forms the cross-sectional view of method along the c-c direction shown in Figure 14 in hole 22 for dry etching dielectric layer 21.
In a particular embodiment, with the mask layer 40 of described first patterned mask layer 30 and second graphical for mask, dielectric layer 21 described in dry etching is formed in the process in hole 22, and advanced figure rete 31, bottom anti-reflection layer 41 are also etched.Technological parameter in dry etching is the routine techniques of those skilled in the art, does not repeat at this.
It should be noted that, in the specific embodiment of the invention, when formation the first patterned mask layer, advanced figure rete has also been etched segment thickness, the mask layer of the second graphical formed afterwards is filled in the figure of advanced figure rete, can guarantee like this after the rete of second graphical has been consumed, can continue the rete serving as second graphical by advanced figure rete, such advanced figure rete had now both done the mask layer that the first patterned mask layer also does second graphical.
Afterwards, with reference to Figure 16, remove the mask layer 40 of the first patterned mask layer 30 and second graphical.Remove the method for the mask layer 40 of the first patterned mask layer 30 and second graphical, do corresponding adjustment according to the difference of the material of the mask layer 40 of the first patterned mask layer 30 and second graphical.
In the present invention, the hole 22 of formation is through hole (via) or contact hole (contact).
The technical program is formed in the method in hole, a mask layer of definition hole pattern be divide into two, the i.e. mask layer of the first patterned mask layer and second graphical, the figure of the first patterned mask layer defines the position in hole along column direction i.e. the first patterned mask layer along column direction, the figure of the mask layer of second graphical in the row direction namely the mask layer of second graphical define the position in hole in the row direction, the overlapping figure of the figure of line direction and the figure of column direction makes the figure in hole; Then, with the mask layer of described first patterned mask layer and second graphical for mask, dielectric layer described in dry etching forms hole.By mask layer being divided into the mask layer of the first patterned mask layer and second graphical, the phenomenon of the mutual adhesion in adjacent hole only occurred by a photoresist layer definition hole pattern in prior art therefore can be avoided.In a particular embodiment, hole can be contact hole (contact), also can be through hole (via).
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection range of technical solution of the present invention.
Claims (14)
1. form the method in hole, it is characterized in that, comprising:
Substrate is provided, is formed with dielectric layer on the substrate;
Described dielectric layer is formed the mask layer of the first patterned mask layer and second graphical, the position of the figure define apertures that the mask layer of described first patterned mask layer and second graphical is formed jointly, wherein, described first patterned mask layer is along the position in column direction definition hole, and the mask layer of described second graphical defines the position in hole in the row direction;
With the mask layer of described first patterned mask layer and second graphical for mask, dielectric layer described in dry etching forms hole;
Wherein, the method described dielectric layer forming the first patterned mask layer comprises: on described dielectric layer, form advanced figure rete; Described advanced figure rete forms the first patterned photoresist layer; With the described advanced figure rete that described first patterned photoresist layer is mask dry etching segment thickness;
The method forming the mask layer of second graphical comprises: the photoresist layer forming second graphical, covers described first patterned mask layer;
When formation the first patterned mask layer, advanced figure rete has also been etched segment thickness, the mask layer of the described second graphical formed afterwards is filled in the figure of advanced figure rete, guarantee like this, after the rete of second graphical has been consumed, to continue by advanced figure rete the rete serving as second graphical.
2. the method forming hole as claimed in claim 1, it is characterized in that, before forming the first patterned photoresist layer, also comprise: on described advanced figure rete, form hard mask layer, before the described advanced figure rete being mask dry etching segment thickness with described first patterned photoresist layer, hard mask layer described in dry etching.
3. the method forming hole as claimed in claim 2, it is characterized in that, described hard mask layer is the anti-reflecting layer of inorganic material.
4. the method forming hole as claimed in claim 2, it is characterized in that, described hard mask layer is metal hard mask layer.
5. the method forming hole as claimed in claim 4, it is characterized in that, the material of described metal hard mask layer is TiN or TaN.
6. the method forming hole as claimed in claim 1, is characterized in that, the method forming the first patterned photoresist layer comprises: form the first photoresist layer, expose described first photoresist layer, develop the patterned photoresist layer of formation first.
7. the method forming hole as claimed in claim 1, is characterized in that, before forming the photoresist layer of second graphical, also comprises:
Form bottom anti-reflection layer, cover described first patterned mask layer;
The photoresist layer of described second graphical is formed in described bottom anti-reflection layer.
8. the method forming hole as claimed in claim 7, it is characterized in that, the material of described bottom anti-reflection layer is organic material.
9. the method forming hole as claimed in claim 8, is characterized in that, the method forming bottom anti-reflection layer comprises:
Described first patterned mask layer applies organic material layer;
Soft baking is carried out to described organic material layer, forms bottom anti-reflection layer.
10. the method forming hole as claimed in claim 1, is characterized in that, the method forming the photoresist layer of second graphical comprises: form the second photoresist layer, expose described second photoresist layer, developing forms the photoresist layer of second graphical.
11. methods forming hole as claimed in claim 1, it is characterized in that, described hole is through hole or contact hole.
12. methods forming hole as claimed in claim 1, it is characterized in that, described dielectric layer is single layer structure or laminated construction.
13. methods forming hole as claimed in claim 12, it is characterized in that, the material of the dielectric layer of single layer structure is silica, low k dielectric materials or ultra-low k dielectric material.
14. methods forming hole as claimed in claim 12, it is characterized in that, in the dielectric layer of laminated construction, the material of every one deck can be silica, low k dielectric materials or ultra-low k dielectric material.
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| CN201210122591.0A CN103377993B (en) | 2012-04-24 | 2012-04-24 | Method for forming hole |
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| CN201210122591.0A CN103377993B (en) | 2012-04-24 | 2012-04-24 | Method for forming hole |
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| CN103377993B true CN103377993B (en) | 2015-06-03 |
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| CN1575525A (en) * | 2001-10-22 | 2005-02-02 | 三星电子株式会社 | Contact portion of semiconductor device and method for manufacturing the same and thin film transistor array panel for displaying device including the contact portion and method for manufacturing the |
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| US7772126B2 (en) * | 2006-10-19 | 2010-08-10 | Qimonda Ag | Hard mask arrangement, contact arrangement and methods of patterning a substrate and manufacturing a contact arrangement |
| US7846782B2 (en) * | 2007-09-28 | 2010-12-07 | Sandisk 3D Llc | Diode array and method of making thereof |
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| CN1575525A (en) * | 2001-10-22 | 2005-02-02 | 三星电子株式会社 | Contact portion of semiconductor device and method for manufacturing the same and thin film transistor array panel for displaying device including the contact portion and method for manufacturing the |
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