CN103336410B - Device for enhancing capability of lithographic process and lithographic process using same - Google Patents

Device for enhancing capability of lithographic process and lithographic process using same Download PDF

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CN103336410B
CN103336410B CN201310264730.8A CN201310264730A CN103336410B CN 103336410 B CN103336410 B CN 103336410B CN 201310264730 A CN201310264730 A CN 201310264730A CN 103336410 B CN103336410 B CN 103336410B
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gradation
aperture
process
multi
illumination
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CN103336410A (en
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毛智彪
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上海华力微电子有限公司
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Abstract

本发明公开了一种增强光刻工艺能力的装置及利用该装置进行的光刻工艺,根据光刻工艺需求,调整多灰度圆环形照明光圈的相关参数,从而使得入射光线经过该多灰度圆环形照明光圈后,以符合工艺需求的曝光量照射至硅片表面,进而使得硅片表面的光刻胶形成最终图形,进一步的完成光刻工艺;本发明提供的增强光刻工艺能力的装置及利用该装置进行的光刻工艺,能够有效提高各种不同尺寸的图形的综合分辨率和工艺窗口,平衡了各种不同尺寸图形的线宽尺寸,且避免了多次曝光工艺的成本增加和产出量降低的问题,进而提高了生产效率和降低了制造成本,且提高了器件的良率。 The present invention discloses apparatus and a method for enhancing a photolithography process with the device capabilities of the lithography process, a photolithography process according to demand, adjust the multi-tone annular illumination aperture parameters, so that the incident light rays through the plurality of gray after the lighting of the circular aperture in order to meet the process requirements of exposure amount irradiated to the wafer surface, thus making the silicon surface to form the final resist pattern, the photolithography process is further completed; photolithography process to enhance the ability of the present invention provides using a photolithography process and apparatus of the apparatus, it is possible to effectively improve various sizes of integrated graphics resolution and process window, the balance of various sizes pattern feature size, cost and avoids multiple exposure process increase in throughput and reduced problems, thus improving productivity and reducing manufacturing costs, and increases the yield of the device.

Description

増强光刻工艺能力的装置及利用该装置进行的光刻工艺 Zo apparatus using light and etching process ability of the apparatus is a lithographic process

技术领域 FIELD

[0001] 本发明涉及一种光刻装置及光刻方法,尤其涉及一种增强光刻工艺能力的装置及利用该装置进行的光刻工艺。 [0001] The present invention relates to a lithographic apparatus and a lithographic method, and particularly to an enhanced using a photolithography process and apparatus of the apparatus of the lithography process capability.

背景技术 Background technique

[0002] 半导体器件的制造需要经过上百道工艺,光刻工艺作为图案化的主要工艺步骤,在半导体器件的制造过程中处于举足轻重的地位。 Manufacturing [0002] The semiconductor device need to go through hundreds of different processes, a photolithography process as a main process step of patterning, in a pivotal position in the manufacturing process of semiconductor devices. 图1是传统的光刻曝光系统的结构示意图;图2是图1中圆形光圈的俯视结构示意图;如图所示,传统的光刻曝光系统包括:圆形光圈101、聚光透镜102和投影透镜104,且圆形光圈101、聚光透镜102和投影透镜104依次由上往下设置;当进行光刻曝光工艺时,光掩模103放置于聚光透镜102和投影透镜104之间,硅衬底105放置于投影透镜104下方,入射光线100沿轴线通过圆形光圈101和聚光透镜102,在光掩模103上的图形处形成衍射,衍射光经过投影透镜104后在硅衬底105表面干涉形成器件图形,从而完成光刻曝光工艺。 1 is a schematic structure of a conventional photolithographic exposure system; FIG. 2 is a schematic top view of a circular aperture configuration in FIG. 1; FIG., A conventional photolithographic exposure system comprising: a circular aperture 101, the condenser lens 102 and a projection lens 104, and the circular aperture 101, the condenser lens 102 and projection lens 104 are sequentially disposed from top to bottom; when a lithography exposure process, a photomask 103 is placed between the condenser lens 102 and projection lens 104, the silicon substrate 105 placed below the projection lens 104, the incident light 100 along an axis 102, the pattern on the photomask 103 is formed by a circular diffraction aperture 101 and the condenser lens, the diffracted light through the projection lens 104 in the silicon substrate interference pattern forming surface of the device 105, thereby completing the lithography exposure process. 其中,圆形光圈101的部分相干系数σ是描述圆形光圈大小的一个重要参数。 Wherein the partial coherence factor σ circular aperture 101 is an important parameter to describe the size of the circular aperture.

[0003] 随着半导体器件的发展,图形尺寸不断缩小,传统的圆形光圈照明方式越来越不能满足技术的需求。 [0003] As semiconductor devices, pattern size shrinking, a conventional circular aperture illumination technology can not meet the demand. 多种分辨率增强技术(Resolut1n Enhancement Techniques,简称RET)逐渐发展起来。 Multiple resolution enhancement technology (Resolut1n Enhancement Techniques, referred to as RET) gradually developed. 离轴照明(off-axis illuminat1n)便是其中较为常用的技术。 Off-axis illumination (off-axis illuminat1n) is one of the more common techniques. 离轴照明光圈有多种选择,四级离轴照明光圈和圆环形离轴照明光圈便是其中两种。 There are many options aperture off-axis illumination, four off-axis illumination and an annular aperture diaphragm is of two off-axis illumination.

[0004] 四级离轴照明光圈经常被用于提高在某两个特定方向排列具有较小空间间距的密集图形的分辨率,图3是采用四级离轴照明光圈的光刻曝光系统的结构示意图;图4是四级离轴照明光圈的俯视结构示意图;如图所示,采用四级离轴照明光圈的光刻曝光系统包括:四级离轴照明光圈201、聚光透镜202和投影透镜204,且四级离轴照明光圈201、聚光透镜202和投影透镜204依次由上往下设置;当进行光刻曝光工艺时,光掩模203放置于聚光透镜202和投影透镜204之间,硅衬底205放置于投影透镜204下方,入射光线200沿与轴线一定偏离的方向通过四级离轴照明光圈201和聚光透镜202,在光掩模203上的图形处形成衍射,衍射光经过投影透镜204后在硅衬底205表面干涉形成器件图形,从而完成光刻曝光工艺。 Structure [0004] The four off-axis illumination is often used to improve the aperture arranged in a small space has two particular directions dense pitch resolution graphics, Figure 3 is four off-axis illumination photolithographic exposure aperture system a schematic diagram; FIG. 4 is a schematic top view of the structure of four off-axis illumination aperture; As shown, the diaphragm having four off-axis illumination photolithographic exposure system comprising: a four off-axis illumination diaphragm 201, a condenser lens 202 and a projection lens 204, and four off-axis illumination diaphragm 201, a condenser lens 202 and the projection lens 204 are sequentially disposed from top down; when a lithography exposure process, a photomask 203 is placed between the condenser lens 204 and a projection lens 202 , the silicon substrate 205 placed below the projection lens 204, 200 along the axis direction of the incident light shifted by four certain off-axis illumination aperture 201 and the condenser lens 202, the pattern on the photomask 203 forming diffraction diffracted light after the surface of the projection lens 204,205 interference device pattern formed in the silicon substrate, thereby completing the lithography exposure process. 其中,四级离轴照明光圈201的部分相干系数oin、、透光孔开口角度α、以及透光孔排列方向和相对方向夹角β是描述四级离轴照明光圈大小、宽度和方向的重要参数。 Wherein the four off-axis illumination aperture portion 201 oin ,, coherence light transmitting hole opening angle [alpha], and a light transmitting hole arrangement direction and the opposite direction is the angle β described four off-axis illumination aperture size, and the width direction of the important parameter. 该四级离轴照明光圈只能对某些特定方向排列的图形有较好的效用,但是对各个方向排列的图形无法起到光刻曝光的效用。 The four off-axis illumination aperture can have a good utility for certain graphics arranged in the direction, but not in all directions arrayed pattern lithographically exposed utility functions.

[0005] 图5是圆环形离轴照明光圈的俯视结构示意图;如图所示,部分相干系数σ in、σ wt是描述圆环形离轴照明光圈301大小和宽度的重要参数,圆环形离轴照明光圈301由于其圆周的对称性,对各个方向排列的图形均有一定的效用,但对于某些特定方向排列的图形,其效用则不如四级离轴照明光圈。 [0005] FIG. 5 is a schematic structural plan view of an annular off-axis illumination diaphragm; As shown, the partial coherence factor σ in, σ wt off-axis illumination is described circular aperture 301 and the width size of the important parameters, the ring shaped aperture 301 due to off-axis illumination symmetry circumference, each pattern are arranged in the direction of a certain effect, but for certain direction arrangement pattern, its effectiveness is not as good four off-axis illumination aperture.

[0006] 图6是偏轴照明光圈的不同空间间距对图形线宽尺寸差值的影响示意图;如图所示,横坐标代表空间间距,纵坐标代表线宽尺寸的差值,在现有的偏轴照明光圈中,在空间间距较大时,线宽尺寸的差值较大,从而会影响光刻、刻蚀工艺后的器件线宽,导致器件不符合工艺需求,从而影响器件的良率。 [0006] FIG. 6 is an off-axis aperture of the illumination effects on different spatial separation pattern feature size difference schematic; As shown, the abscissa represents the spatial separation, a line width difference of ordinate represents the size, in the conventional off-axis illumination aperture, the spatial separation is large, the line width difference larger size, which will affect the line width of the device after the lithography, etching process, resulting in the device does not meet the process requirements, thus affecting the yield of the device . 在器件产品中,尤其在逻辑产品中,大量存在各种不同尺寸的图形,虽然单一的离轴照明光圈能够有效的提高小尺寸图形的分辨率,但是不能保证不同尺寸的图形都有足够的分辨率。 Product in the device, particularly in a logic product, various pattern of a large number of different sizes, although a single off-axis illumination diaphragm can effectively improve the resolution of the small size of the pattern, but the pattern can not guarantee that different sizes have sufficient resolution rate. 某些图形甚至无法被显像,形成禁止空间间距区域。 Some graphics imaging is not even, spatial separation region formed prohibited.

[0007] 为了平衡不同尺寸空间间距图形的光刻工艺能力,一种方法是采用双重离轴照明光圈的光刻曝光方法。 [0007] In order to balance spatial separation of different sizes of graphics capabilities photolithography process, a photolithography method is to use the double exposure method of off-axis illumination aperture. 美国专利(公开号:US20100165317)采用了包含双极照明光圈和圆环形照明光圈的杂化照明光圈,图7是包含双极照明光圈和圆环形照明光圈的杂化照明光圈的俯视结构示意图;如图所示,该杂化照明光圈401包括双极照明光圈402和圆环形照明光圈403,该方法通过两个不同大小的离轴照明有效的提高了某一特定方向排列并且具有最小空间间距的密集图形的分辨率,减少了线宽尺寸在较大空间间距区域内的波动,降低了形成禁止空间间距区域的风险。 U.S. Patent (Publication No: US20100165317) uses hybrid illumination aperture comprises a dipole illumination and annular illumination aperture diaphragm, FIG. 7 is a schematic top view of the structure of hybrid illumination aperture comprises a dipole illumination and annular illumination aperture diaphragm ; As shown, the hybrid illumination diaphragm 401 comprises a bipolar illumination aperture 402 and annular illumination aperture 403, through which two different off-axis illumination increases the effective size of a given direction and aligned with the smallest space dense pitch pattern resolution, reduces the fluctuation in the width dimension larger spatial separation zone, reducing the risk of forming spatial separation prohibited area.

[0008] 但是该杂化照明光圈对平衡多方向排列图形的分辨率效用有限,并且仅用两个不同大小的部分相干系数σ和两种离轴照明在平衡各种图形的线宽尺寸和工艺窗口方面缺少灵活性,难以对不同尺寸的图形达成最佳工艺平衡。 [0008] However, the hybrid illumination finite aperture arrangement pattern of the multi-directional resolution utility balance, and partial coherence factor σ using only two different sizes and two types of off-axis illumination in the balance of the process and the feature size pattern lack of flexibility in terms of the window, it is difficult to achieve the optimum balance of graphics of different sizes. 另外,现有技术中还可以采用不同尺寸离轴照明光圈的双重曝光方法来弥补曝光量匹配的问题,但是双重曝光方法会导致制造成本的增加,且导致生产产出量下降。 Further, the prior art double-exposure method may also be employed in different sizes to compensate for off-axis illumination aperture exposure amount matching problem, but double-exposure method results in an increase in manufacturing costs, and results in decreased production yield.

发明内容 SUMMARY

[0009] 针对上述存在的问题,本发明提供一种增强光刻工艺能力的装置及利用该装置进行的光刻工艺,以克服现有技术中在平衡各种图形的线宽尺寸和工艺窗口方面缺少灵活性,难以对不同尺寸的图形达成最佳工艺平衡的问题,同时也克服现有技术中采用双重曝光方法导致制造成本的增加,且导致生产产出量下降的问题。 [0009] For the above problems, the present invention provides an apparatus and process enhancement lithographic apparatus with which a photolithography process is the ability to overcome the prior art balance of the size and pattern of the line width in the process window lack of flexibility, it is difficult to achieve the optimum balance issues graphics of different sizes, but also to overcome the prior art using double-exposure method results in an increase in manufacturing costs, and results in the problem of decreased production yields.

[0010] 为了实现上述目的,本发明采取的技术方案为: [0010] To achieve the above object, the present invention takes technical solutions:

[0011] 一种增强光刻工艺能力的装置,应用于硅片的光刻工艺中,所述系统包括聚光透镜,其中,所述系统还包括一多灰度圆环形照明光圈; [0011] means an enhanced ability of a lithographic process, a photolithography process is applied to a silicon wafer, the system comprising a condenser lens, wherein said system further comprises a multi-gradation annular illumination aperture;

[0012] 所述多灰度圆环形照明光圈设置于所述聚光透镜的瞳孔平面;所述多灰度圆环形照明光圈上还设置有四级照明组合; [0012] The multi-gradation annular illumination aperture is provided in the condenser pupil plane of the lens; the multi-gradation annular illumination aperture is also provided with four illumination combiner;

[0013] 其中,所述四级照明组合包括四个透光孔。 [0013] wherein the composition comprises four four illumination light transmission hole.

[0014] 上述的增强光刻工艺能力的装置,其中,所述多灰度圆环形照明光圈为具有至少三种不同灰度圆环分布的多灰度圆环形照明光圈。 [0014] The enhanced ability of photolithography process means, wherein said multi-gradation annular illumination aperture having a plurality of circular illuminating aperture gradation of at least three different gray distribution ring.

[0015] 上述的增强光刻工艺能力的装置,其中,所述透光孔为具有多种灰度分布的透光孔。 [0015] The photolithography process to enhance the ability of the device, wherein the light transmitting holes having a plurality of light transmitting holes of the intensity distribution.

[0016] 上述的增强光刻工艺能力的装置,其中,所述灰度的差异为台阶式差异或者过渡式差异。 [0016] The photolithography process to enhance the ability of the device, wherein the difference is a step-wise gradation difference or transitional differences.

[0017] 上述的增强光刻工艺能力的装置,其中,所述多灰度圆环形照明光圈的外圈部分相干系数为Oratl,所述多灰度圆环形照明光圈的内圈部分相干系数为Oinl; [0017] The enhanced ability of photolithography process means, wherein the outer portion of the multi-gradation coherence annular illumination aperture is Oratl, the multi-gradation coefficient annular inner portion coherent illumination aperture as Oinl;

[0018] 其中,所述外圈部分相干系数σ。 [0018] wherein said outer partial coherence factor σ. _为0.7〜0.9,所述内圈部分相干系数σ inl为0.3 〜0.5。 _ Is 0.7~0.9, the inner portion coherent factor σ inl ~ 0.5 to 0.3.

[0019] 上述的增强光刻工艺能力的装置,其中,所述透光孔的形状为部分圆环、圆形或者椭圆形。 [0019] The photolithography process to enhance the ability of the apparatus, wherein the shape of the light transmitting hole is part annular, circular or elliptical.

[0020] 上述的增强光刻工艺能力的装置,其中,四个所述透光孔根据工艺需求设置于所述多灰度照明光圈中的特定位置,且每个所述透光孔均不重叠。 [0020] The enhanced ability of photolithography process means, wherein said four light transmission holes provided in the process according to the needs of multi-gradation in a specific position in the illumination aperture, and each of the light holes do not overlap .

[0021] 上述的增强光刻工艺能力的装置,其中,所述四级照明组合的外圈部分相干系数为Orat2,所述四级照明组合的内圈部分相干系数为oin2; [0021] The photolithography process to enhance the ability of the device, wherein the four combinations of the outer partially coherent illumination coefficient Orat2, the four inner portion coherent illumination combined coefficient oin2;

[0022] 其中,所述外圈部分相干系数σ _2为0.7〜0.9,所述内圈部分相干系数σ in2为0.5 〜0.7 ο [0022] wherein said outer partial coherence factor σ _2 is 0.7~0.9, the inner portion of coherence σ in2 0.5 ~0.7 ο

[0023] 上述的增强光刻工艺能力的装置,其中,所述四级照明组合的开口角度为α,所述四级照明组合的排列方向和相对方向的夹角为β ; [0023] The photolithography process to enhance the ability of the device, wherein the opening angle [alpha] is a combination of four illumination, the four illumination angle and the combined arrangement direction opposite to the direction beta];

[0024] 其中,所述开口角度α为15°〜50°,所述夹角β: α彡β彡180° -α。 [0024] wherein, the opening angle [alpha] of 15 ° ~50 °, the angle β: α San beta] San 180 ° -α.

[0025] 一种利用上述的增强光刻工艺能力的装置进行的光刻工艺,应用于硅片的光刻工艺中,其中,包括: [0025] means to enhance the ability of photolithography process is performed utilizing the photolithography process, a photolithography process is applied to silicon wafers, comprising:

[0026] 根据工艺需求调节多灰度圆环形照明光圈的相关参数; [0026] The process of adjusting parameters demand multi-tone annular illumination aperture;

[0027] 将所述多灰度圆环形照明光圈置于聚光透镜的瞳孔平面; [0027] The multi-gradation annular illumination pupil plane of the diaphragm disposed in the condenser lens;

[0028] 入射光线通过所述多灰度圆环形照明光圈和聚光透镜后,在光掩模处衍射形成衍射光; [0028] After the incident light gray annular aperture illumination and the condenser lens, the light diffracted at the mask is formed by a plurality of diffracted light;

[0029] 所述衍射光经过投影透镜后在所述硅片上表面覆盖的光刻胶中干涉形成最终图形; [0029] After the photoresist diffracted light projection lens on the covered surface of a silicon wafer to form a final interference pattern;

[0030] 继续后续的烘焙和显影操作,完成所述硅片的光刻工艺; [0030] continue with the subsequent baking and developing operation of the silicon wafer lithography process is completed;

[0031] 其中,所述多灰度圆环形照明光圈上设置有包括四个透光孔的四级照明组合。 [0031] wherein said plurality is provided with four illumination light transmissive composition comprising four holes in the annular illumination aperture gradation.

[0032] 上述的光刻工艺,其中,所述多灰度圆环形照明光圈的相关参数包括:外圈部分相干系数、内圈部分相干系数Qinl和圆环灰度,以及所述四级照明组合的外圈部分相干系数Qwt2、内圈部分相干系数为Oin2、开口角度α、排列方向和相对方向的夹角β和透光孔灰度。 [0032] The photolithographic process, wherein the multi-gradation annular illumination aperture parameters comprising: an outer ring portion coherence, the inner ring portion and coherence Qinl gradation, and the four illumination the outer part of coherence combined Qwt2, the inner portion coherent coefficient Oin2, the opening angle α, an angle β relative to the arrangement direction and the direction of light transmission hole and gradation.

[0033] 上述的光刻工艺,其中,所述入射光线以一符合工艺需求的曝光量通过所述多灰度圆环形照明光圈和聚光透镜。 [0033] The photolithographic process, wherein the incident light at an exposure amount meet the process requirements of the multi-gradation through annular illumination aperture and a condenser lens.

[0034] 上述的光刻工艺,其中,所述入射光的波长为:436nm、365nm、248nm或193nm。 [0034] The photolithographic process, wherein, as the wavelength of incident light: 436nm, 365nm, 248nm or 193nm.

[0035] 上述的光刻工艺,其中,所述入射光完全或者部分通过所述多灰度圆环形照明光圈的不同灰度透光区。 [0035] The above-described photolithographic process, wherein the incident light is completely or partially through said plurality of different gray gradation transmissive region of the annular illumination aperture.

[0036] 上述技术方案具有如下优点或者有益效果: [0036] The above technical solutions have the following advantages or beneficial effects:

[0037] 本发明通过根据光刻工艺需求,调整多灰度圆环形照明光圈的外圈部分相干系数、内圈部分相干系数、圆环灰度分布以及四级照明组合的外圈部分相干系数、内圈部分相干系数、透光孔开口角度、透光孔排列方向与相对方向夹角、透光孔灰度组合,从而使得入射光线经过该多灰度圆环形照明光圈后,能够以符合工艺需求的曝光量照射至硅片表面,进而使得硅片表面的光刻胶形成最终图形,进一步的完成光刻工艺;本发明提供的增强光刻工艺能力的装置及利用该装置进行的光刻工艺,能够有效提高各种不同尺寸图形的综合分辨率和工艺窗口,平衡了各种不同尺寸图形的线宽尺寸,且避免了多次曝光工艺的成本增加和产出量降低的问题,进而提高了生产效率和降低了制造成本,且提高了器件的良率。 [0037] According to the present invention by a lithographic process requirements, outer part of the multi-tone adjustment coefficient coherent illumination diaphragm outer annular portion of coherence, the inner part of coherence, annular illumination intensity distribution, and four combinations , the inner part of coherence, the light-transmitting hole opening angle, light transmission hole arrangement direction opposite the direction of angle, the light-transmitting hole gradation composition, so that the incident light after the multi-gradation annular illumination aperture, can meet process requirements exposure amount irradiated to the wafer surface, thus making the silicon surface to form the final resist pattern, a further photolithographic process is completed; and the use of the apparatus means to enhance the ability of the photolithography process of the present invention provides a lithography process can effectively improve various sizes of integrated graphics resolution and process window, the balance of various sizes pattern feature size, and avoiding an increase in cost of the multiple exposure process and reduced throughput problem, and to improve production efficiency and reduce manufacturing costs, and increases the yield of the device.

附图说明 BRIEF DESCRIPTION

[0038] 通过阅读参照以下附图对非限制性实施例所作的详细描述,本发明及其特征、夕卜形和优点将会变得更明显。 [0038] By reading the following detailed description of non-limiting embodiments of the drawings, the present invention and its features, and advantages of the shaped Bu Xi will become more apparent. 在全部附图中相同的标记指示相同的部分。 The same numerals indicate like parts throughout the drawings. 并未刻意按照比例绘制附图,重点在于示出本发明的主旨。 The drawings are deliberately not to scale, emphasis being placed upon illustrating the gist of the present invention.

[0039] 图1是传统的光刻曝光系统的结构示意图; [0039] FIG. 1 is a schematic structural diagram of a conventional photolithographic exposure system;

[0040] 图2是图1中圆形光圈的俯视结构示意图; [0040] FIG. 2 is a schematic plan view showing a circular aperture;

[0041] 图3是采用四级离轴照明光圈的光刻曝光系统的结构示意图; [0041] FIG. 3 is a schematic view of a lithographic exposure system using four off-axis illumination aperture;

[0042] 图4是四级离轴照明光圈的俯视结构示意图; [0042] FIG. 4 is a schematic top view of the structure of four off-axis illumination aperture;

[0043] 图5是圆环形离轴照明光圈的俯视结构示意图; [0043] FIG. 5 is a schematic structural plan view of an annular off-axis illumination diaphragm;

[0044] 图6是偏轴照明光圈的不同空间间距对图形线宽尺寸差值的影响示意图; [0044] FIG. 6 is a different off-axis spatial illumination aperture spacing on a schematic graphical feature size of the difference;

[0045] 图7是包含双极照明光圈和圆环形照明光圈的杂化照明光圈的俯视结构不意图; [0045] FIG. 7 is a plan view of the diaphragm structure comprising a hybrid illumination and dipole illumination annular illumination aperture diaphragm is not intended;

[0046]图8是本发明实施例提供的增强光刻工艺能力的装置的结构示意图; [0046] FIG. 8 is a block diagram of an apparatus to enhance the ability of a lithographic process according to an embodiment of the present invention;

[0047] 图9是本发明实施例提供的图8中的多灰度圆环形照明光圈的俯视结构示意图; [0047] FIG. 9 is a schematic top view of a multi-circular configuration embodiment provided in FIG. 8 embodiment of the present invention, an illumination aperture gradation;

[0048] 图10是本发明实施例提供的利用图8中的装置进行的光刻工艺的流程示意图; [0048] FIG. 10 is a schematic flow in the photolithography process using the apparatus of FIG. 8 according to an embodiment of the present invention;

[0049] 图11是采用本发明实施例提供的利用图8中的装置进行的光刻工艺时,不同空间间距对图形线宽尺寸差值的影响示意图。 When [0049] FIG. 11 is a device using a lithographic process in FIG. 8 using the embodiment of the present invention is provided in different spatial separation pattern diagram showing the effect of the difference in feature size.

具体实施方式 Detailed ways

[0050] 下面结合附图和具体的实施例对本发明作进一步的说明,但是不作为本发明的限定。 [0050] accompanying drawings and the following embodiments in conjunction with specific embodiments of the present invention will be further described, but not limitative of the present invention.

[0051] 实施例: [0051] Example:

[0052]图8是本发明实施例提供的增强光刻工艺能力的装置的结构示意图;图9是本发明实施例提供的图8中的多灰度圆环形照明光圈的俯视结构示意图;图10是本发明实施例提供的利用图8中的装置进行的光刻工艺的流程示意图;如图所示,增强光刻工艺能力的装置包括聚光透镜502和投影透镜504,还包括多灰度圆环形照明光圈501,且该多灰度圆环形照明光圈501位于聚光透镜502的瞳孔平面,投影透镜504位于聚光透镜502的正下方,该多灰度圆环形照明光圈501上设置有四级照明组合,同时该四级照明组合包括四个透光孔02,该透光孔02为多灰度分布的透光孔,该四个透光孔02内嵌于多灰度圆环形照明光圈的多灰度圆环01中。 [0052] FIG. 8 is a block diagram of an apparatus to enhance the ability of a lithographic process according to an embodiment of the present invention; FIG. 9 is a schematic top view of the structure of multi-gradation annular illumination aperture provided in FIG. 8 embodiment of the present invention; FIG. 10 is a flow diagram of the lithography process using the apparatus of FIG. 8 according to an embodiment of the present invention; As shown, the apparatus includes a lithographic process capability condenser lens 502 and the projection lens 504 enhanced, further comprising a multi-gradation annular illumination aperture 501, and the multi-gradation annular illumination aperture 501 is located in a pupil plane of the condenser lens, the projection lens 502 is located directly below the 504 of the condenser lens 502, the multi-gradation annular illumination diaphragm 501 there are four lighting is provided in combination, and the composition comprises four four illumination light transmitting hole 02, the transparent aperture 02 is intensity distribution of light holes plurality, four of the light transmitting hole 02 is embedded in the multi-gradation circle multi-tone ring 01 in annular illumination aperture.

[0053] 其中,多灰度圆环形照明光圈501为具有至少三种不同灰度圆环分布的多灰度圆环形照明光圈,即该多灰度圆环形照明光圈501的多灰度圆环01为具有至少三种不同灰度的圆环组合而成,并且该灰度的差异为台阶式差异或者过渡式差异,同时,多灰度圆环形照明光圈501的外圈部分相干系数为σ outl,σ。 [0053] wherein the multi-gradation annular illumination diaphragm 501 is a multi-gradation annular illumination having at least three different gray annular aperture distribution, i.e., the multi-multi-gradation gray annular illumination diaphragm 501 ring 01 having at least three different gray ring combination, and the difference in the gradation transition is stepped difference, or the difference formula, at the same time, multi-gradation annular illumination aperture 501 of the outer portion coherence as σ outl, σ. 咖为0.7〜0.9,如0.7,0.71,0.75,0.8,0.85、0.89,0.9等,多灰度圆环形照明光圈501的内圈部分相干系数为ο inl,σ inl为0.3〜0.5,如0.3、0.31、0.33、0.38、0.43、0.48、0.5 等。 Coffee is 0.7~0.9, such 0.7,0.71,0.75,0.8,0.85,0.89,0.9 the like, the inner annular portion of multi-gradation coherence illumination diaphragm 501 is ο inl, σ inl is 0.3~0.5, such as 0.3 , 0.31,0.33,0.38,0.43,0.48,0.5 and so on.

[0054] 另外,上述透光孔02的形状为部分圆环、圆形或者椭圆形,透光孔02为具有多种灰度分布的透光孔或者纯透光的透光孔,当该透光孔02为多种灰度分布的透光孔时,该灰度的差异为台阶式差异或者过渡式差异;同时四个透光孔02的根据工艺需求设置于多灰度照明光圈中的特定位置,且每个透光孔02均不重叠,如排列在X方向和Y方向或者其他任意角度方向,而四级照明组合的外圈部分相干系数为σ wt2,σ out2为0.7〜0.9,如0.7、0.72,0.78,0.83,0.88、0.9等,该四级照明组合的内圈部分相干系数为σ in2,σ in2为0.5〜0.7,如0.5,0.51,0.55,0.59,0.63,0.68,0.7等,且该四级照明组合的开口角度为α,α为15。 [0054] Further, the shape of the light transmission hole portion 02 is annular, circular or elliptical, having a light transmitting hole 02 is light-transmitting holes or a plurality of gray scale distribution pure transparent light transmitting hole, when the through when the aperture 02 is a plurality of light transmitting holes of gray scale distribution, the difference of the gradation transition is stepped difference, or difference formula; while four light transmission hole 02 is provided in the process according to the needs of multi-gradation specific illumination aperture positions, and each light-passing apertures 02 do not overlap, as arranged in the X and Y directions, or any other angular direction, while the outer ring partially coherent illumination four combinations of coefficient σ wt2, σ out2 is 0.7~0.9, such as 0.7,0.72,0.78,0.83,0.88,0.9 other, the inner portion of the combination of four illumination coherence factor σ in2, σ in2 is 0.5~0.7, and the like as 0.5,0.51,0.55,0.59,0.63,0.68,0.7 and the opening angle of the four illumination combination of α, α 15. 〜50。 ~ 50. ,如15。 , Such as 15. 、20。 20. 、25。 25. 、30。 30. 、35。 35. 、40。 40. 、45。 45. 、50。 50. 等,四级照明组合的排列方向和相对方向的夹角为β,且α彡β彡180° -α,当α为15°时,β为15°、20°、35。 Etc., combined lighting arrangement direction and four relative angle direction is beta], and α San beta] San 180 ° -α, when α is 15 °, β is 15 °, 20 °, 35. 、75。 75. 、95。 95. UlO0、128。 UlO0,128. 、135。 135. 、145。 145. 、165。 165. 、175。 175. 等。 Wait.

[0055] 本申请还提供一种利用图8中的装置进行光刻工艺的方法,参见图10所示,当对硅片505进行光刻工艺时,将光掩模503放置于聚光透镜502和投影透镜504之间,具体的距离根据光刻工艺条件确定,而后根据工艺需求调节多灰度圆环形照明光圈501的相关参数,入射光500以一符合工艺需求的曝光量通过该多灰度圆环形照明光圈501和聚光透镜502后,在光掩模503处衍射形成衍射光,衍射光经过投影透镜504后在硅片505上表面覆盖的光刻胶中形成图形,而后进行后续的烘焙和显影操作,从而完成所述硅片505的光刻工艺。 [0055] The present application further provides means 8 in FIG photolithography process utilizing a method, refer to FIG. 10, when the photolithography process is performed to the silicon wafer 505, photomask 503 is placed on the condenser lens 502 and between the projection lens 504, in particular from the lithographic process conditions is determined, then the parameters associated with the modulation multi-gradation annular illumination diaphragm 501 according to the process requirements, the incident light at an exposure amount of 500 meet the process requirements by the multi-gray after the lighting of the circular aperture 501 and the condenser lens 502, the light at the diffraction mask 503 is formed diffracted light, diffracted light after the photoresist 504 covering the surface of the projection lens on the silicon wafer 505 is patterned, and then subsequently baking and developing operation, thereby completing the wafer 505 in a photolithography process.

[0056] 其中,多灰度圆环形照明光圈的相关参数包括:外圈部分相干系数Otjutl、内圈部分相干系数Qinl和圆环灰度,以及四级照明组合的外圈部分相干系数σ wt2、内圈部分相干系数为Cin2、开口角度α、排列方向和相对方向的夹角β和透光孔灰度等,同时,入射光500的波长为436nm、365nm、248nm或193nm,并且入射光完全或者部分通过多灰度圆环形照明光圈的不同灰度透光区。 [0056] wherein the multi-tone parameters annular illumination aperture comprises: an outer ring portion coherence Otjutl, and the inner annular portion coherence Qinl gradation, and the outer ring partially coherent illumination four combination coefficients σ wt2 , Cin2, the inner portion coherent coefficient, the opening angle [alpha], and an angle β relative to the arrangement direction and the direction of light transmission hole grayscale, etc., while the incident light wavelength of 500 to 436nm, 365nm, 248nm or 193 nm, and the incident light is completely or partially transmissive regions of different gray gradation through multiple annular illumination aperture.

[0057] 图11是采用本发明实施例提供的利用图8中的装置进行的光刻工艺时,不同空间间距对图形线宽尺寸差值的影响示意图;如图所示,横坐标代表空间间距,纵坐标代表线宽尺寸的差值,在本发明实施例提供的多灰度圆环形照明光圈中,在空间间距较大时,线宽尺寸的差值仍然较小,从而有效提高各种不同尺寸的图形的综合分辨率和工艺窗口,平衡了各种不同尺寸图形的线宽尺寸,且避免了多次曝光工艺的成本增加和产出量降低的问题,进而提高了生产效率和降低了制造成本,且提高了器件的良率。 When [0057] FIG. 11 is a device using a lithographic process in FIG. 8 using the embodiment of the present invention is provided in different spatial spacing on the pattern size of the line width difference schematic; As shown, the abscissa represents the spatial separation , line width difference of ordinate represents the size of the illumination in the multi-tone circular aperture provided in the embodiment of the present invention, the spatial separation is large, the difference in feature size is still small, thus effectively improving the various different sizes integrated graphics resolution and process window, balancing a variety of different sizes of graphics feature size, and avoiding an increase in the cost of multiple exposure process and reduce the amount of output problems, thus improving productivity and reducing the manufacturing costs, and increases the yield of the device.

[0058] 本发明实施例通过根据光刻工艺需求,调整多灰度圆环形照明光圈的外圈部分相干系数、内圈部分相干系数、圆环灰度分布以及四级照明组合的外圈部分相干系数、内圈部分相干系数、透光孔开口角度、透光孔排列方向与相对方向夹角、透光孔灰度组合,从而使得入射光线经过该多灰度圆环形照明光圈后,能够以符合工艺需求的曝光量照射至硅片表面,进而使得硅片表面的光刻胶形成最终图形,进一步的完成光刻工艺;本发明提供的增强光刻工艺能力的装置及利用该装置进行的光刻工艺,能够有效提高各种不同尺寸图形的综合分辨率和工艺窗口,平衡了各种不同尺寸图形的线宽尺寸,且避免了多次曝光工艺的成本增加和产出量降低的问题,进而提高了生产效率和降低了制造成本,且提高了器件的良率。 EXAMPLES The lithographic process requirements, outer annular portion of multi-gradation adjustment of the illumination diaphragm outer partial coherence factor, the inner part of coherence, annular illumination intensity distribution, and four combinations of [0058] the present invention coherence, the inner part of coherence, the light-transmitting hole opening angle, light transmission hole arrangement direction opposite the direction of angle, the light-transmitting hole gradation composition, so that the incident light after the multi-gradation annular illumination aperture, can be to meet the process requirements of the exposure amount irradiated to the wafer surface, thus making the silicon surface to form the final resist pattern, a further photolithographic process is completed; and the use of the apparatus means to enhance the ability of the photolithography process of the present invention provides lithography process, can effectively improve a variety of different sizes integrated graphics resolution and process window, balancing a variety of different sizes of graphics feature size, and avoiding an increase in the cost of multiple exposure process and reduce the throughput problem, thereby improving the productivity and reduce the manufacturing cost and improve the yield of the device.

[0059] 综上所述,本发明通过根据光刻工艺需求,调整多灰度圆环形照明光圈的外圈部分相干系数、内圈部分相干系数、圆环灰度分布以及四级照明组合的外圈部分相干系数、内圈部分相干系数、透光孔开口角度、透光孔排列方向与相对方向夹角、透光孔灰度组合,从而使得入射光线经过该多灰度圆环形照明光圈后,能够以符合工艺需求的曝光量照射至硅片表面,进而使得硅片表面的光刻胶形成最终图形,进一步的完成光刻工艺;本发明提供的增强光刻工艺能力的装置及利用该装置进行的光刻工艺,能够有效提高各种不同尺寸图形的综合分辨率和工艺窗口,平衡了各种不同尺寸图形的线宽尺寸,且避免了多次曝光工艺的成本增加和产出量降低的问题,进而提高了生产效率和降低了制造成本,且提高了器件的良率。 [0059] As described above, according to the present invention, by a photolithography process demand, adjust the outer portion coherence multi-gradation annular illumination aperture, the inner part of coherence, annular illumination intensity distribution, and four combinations coherence outer portion, the inner portion of coherence, the light-transmitting hole opening angle, the angle between the light transmission hole arrangement direction opposite direction, a combination of light transmissive holes gradation, so that the incident light through the multi-gradation annular illumination aperture after, it is possible to meet the process requirements of the exposure amount irradiated to the wafer surface, thus making the silicon surface to form the final resist pattern, the photolithography process is further completed; the reinforcing means and the use of the photolithography process of the present invention provides the ability to means of a photolithography process, can improve various sizes of integrated graphics resolution and process window, the balance of various sizes pattern feature size, and the multiple exposure process avoids the cost and increase throughput reduction problems, thereby improving the productivity and reduce the manufacturing cost and improve the yield of the device.

[0060] 本领域技术人员应该理解,本领域技术人员结合现有技术以及上述实施例可以实现所述变化例,在此不予赘述。 [0060] It should be understood by those skilled in the art, one skilled in the art in conjunction with the prior art and the above-described embodiments may implement variations, not described herein. 这样的变化例并不影响本发明的实质内容,在此不予赘述。 Such variations do not affect the substance of the present invention, not described herein.

[0061] 以上对本发明的较佳实施例进行了描述。 [0061] The foregoing preferred embodiments of the invention have been described. 需要理解的是,本发明并不局限于上述特定实施方式,其中未尽详细描述的设备和结构应该理解为用本领域中的普通方式予以实施;任何熟悉本领域的技术人员,在不脱离本发明技术方案范围情况下,都可利用上述揭示的方法和技术内容对本发明技术方案作出许多可能的变动和修饰,或修改为等同变化的等效实施例,这并不影响本发明的实质内容。 Is to be understood that the present invention is not limited to the specific embodiments, wherein the device structure and deficiencies detailed description should be understood to be implemented by those skilled in the normal way; any skilled in the art, without departing from the present the scope of the aspect of the invention, can use the above-described methods and technical content disclosed technical solution of the present invention made many possible variations and modifications, equivalent variations or modifications of equivalent embodiments, this does not affect the substance of the present invention. 因此,凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所做的任何简单修改、等同变化及修饰,均仍属于本发明技术方案保护的范围内。 Thus, all without departing from the technical solutions of the present invention, any simple modification based on the technical essence of the present invention made of the above Example, equivalents, modifications and variations, provided they fall within the scope of protection of the present invention.

Claims (11)

1.一种增强光刻工艺能力的装置,应用于硅片的光刻工艺中,所述装置包括聚光透镜,其特征在于,所述装置还包括一多灰度圆环形照明光圈,所述多灰度圆环形照明光圈为具有至少三种不同灰度圆环分布的多灰度圆环形照明光圈; 所述多灰度圆环形照明光圈设置于所述聚光透镜的瞳孔平面;所述多灰度圆环形照明光圈上还设置有四级照明组合; 其中,所述四级照明组合包括四个内嵌于多灰度圆环的透光孔,且四个所述透光孔处于同一圆环中。 1. An apparatus for enhancing the ability photolithography process, a photolithography process is applied to silicon wafers, the apparatus comprising a condensing lens, characterized in that said apparatus further comprises a multi-gradation annular illumination aperture, the said multi-gradation annular illumination aperture having a plurality of circular illuminating aperture gradation of at least three different gray ring distribution; the multi-gradation annular illumination aperture is provided in a pupil plane of the condenser lens ; on the multi-gradation annular illumination aperture is also provided with four lighting combinations thereof; wherein the composition comprises four illumination light transmission hole four ring embedded in the multi-gradation, and the four-permeable aperture in the same circular ring.
2.如权利要求1所述的增强光刻工艺能力的装置,其特征在于,每个所述透光孔具有多种灰度分布。 2. The device of claim 1 enhanced the ability of photolithography process as claimed in claim, wherein each said aperture having a plurality of light transmitting intensity distribution.
3.如权利要求2所述的增强光刻工艺能力的装置,其特征在于,所述透光孔具有的多种灰度分布中灰度的差异为台阶式差异。 2, the reinforcing means of photolithography process capability claim, wherein said plurality of light transmitting holes having a difference in intensity distribution is a step-difference gradation.
4.如权利要求1所述的增强光刻工艺能力的装置,其特征在于,所述多灰度圆环形照明光圈的外圈部分相干系数为Oratl,所述多灰度圆环形照明光圈的内圈部分相干系数为0 ini; 其中,所述外圈部分相干系数σ为0.7〜0.9,所述内圈部分相干系数σ inl为0.3〜0.5ο 4. The apparatus according to claim 1 to enhance the ability of the photolithography process multi-gradation annular illumination aperture, characterized in that the outer portion of the multi-gradation annular aperture illumination coherence factor Oratl, the inner portion coherent coefficient is 0 ini; wherein said partial coherence factor [sigma] outer ring is 0.7~0.9, the inner portion of coherence σ inl 0.3~0.5ο
5.如权利要求1所述的增强光刻工艺能力的装置,其特征在于,所述透光孔的形状为部分圆环、圆形或者椭圆形。 5. The apparatus of claim 1 to enhance the ability of photolithography process as claimed in claim, wherein the shape of the light transmitting hole is part annular, circular or elliptical.
6.如权利要求1所述的增强光刻工艺能力的装置,其特征在于,每个所述透光孔均不重叠。 6. The apparatus of enhancing the ability of a lithographic process according to claim 1, wherein each of the light transmission holes do not overlap.
7.如权利要求1所述的增强光刻工艺能力的装置,其特征在于,所述四级照明组合的外圈部分相干系数为σ_2,所述四级照明组合的内圈部分相干系数为oin2; 其中,所述外圈部分相干系数σ 为0.7〜0.9,所述内圈部分相干系数σ in2为0.5〜0.7。 7. The device of claim 1 to enhance the ability of photolithography process as claimed in claim, wherein said combined outer four partially coherent illumination coefficient σ_2, the four inner portion coherent illumination coefficient combination is oin2 ; wherein said partial coherence factor [sigma] outer ring is 0.7~0.9, the inner portion coherent factor σ in2 is 0.5~0.7.
8.一种利用如权利要求1所述的增强光刻工艺能力的装置进行的光刻工艺,应用于硅片的光刻工艺中,其特征在于,包括: 根据工艺需求调节多灰度圆环形照明光圈的相关参数,其中,所述多灰度圆环形照明光圈的相关参数包括:外圈部分相干系数Otjutl、内圈部分相干系数Qinl和圆环灰度,以及所述四级照明组合的外圈部分相干系数σ_2、内圈部分相干系数为0in#P透光孔灰度; 将所述多灰度圆环形照明光圈置于聚光透镜的瞳孔平面; 入射光线通过所述多灰度圆环形照明光圈和聚光透镜后,在光掩模处衍射形成衍射光; 所述衍射光经过投影透镜后在所述硅片上表面覆盖的光刻胶中干涉形成最终图形; 继续后续的烘焙和显影操作,完成所述硅片的光刻工艺; 其中,所述多灰度圆环形照明光圈上设置有包括四个透光孔的四级照明组合。 A lithography process using a device as claimed in claim photolithography process to enhance the ability of the 1, applied to a silicon wafer in a lithography process, characterized by comprising: a multi-gradation adjusting ring according to process requirements shaped aperture illumination related parameters, wherein the multi-gradation annular illumination aperture parameters comprising: an outer ring portion coherence Otjutl, and the inner annular portion coherence Qinl gray, and a combination of the four lighting the outer portion of coherence σ_2, the inner part of coherence light transmitting hole gradation 0in # P; the multi-gradation annular illumination pupil plane of the condenser lens disposed aperture; a plurality of said incident light through ash after the lighting of the circular aperture and a condenser lens, a photomask is formed at the diffraction diffracted light; photoresist after the diffracted light of the projection lens on the covered surface of a silicon wafer to form a final interference pattern; continue with the subsequent baking and developing operation of the silicon wafer lithography process is completed; wherein said multi-gradation is provided with four illumination light transmissive composition comprising four circular holes in the illumination aperture.
9.如权利要求8所述的光刻工艺,其特征在于,所述入射光线以一符合工艺需求的曝光量通过所述多灰度圆环形照明光圈和聚光透镜。 9. The lithographic process according to claim 8, wherein said incident light at an exposure amount meet the process requirements of the multi-gradation through annular illumination aperture and a condenser lens.
10.如权利要求8所述的光刻工艺,其特征在于,所述入射光的波长为:436nm、365nm、248nm 或193nm。 10. The lithographic process according to claim 8, characterized in that the wavelength of the incident light: 436nm, 365nm, 248nm or 193nm.
11.如权利要求8所述的光刻工艺,其特征在于,所述入射光部分通过所述多灰度圆环形照明光圈的不同灰度透光区。 11. The lithographic process according to claim 8, wherein said incident light transmissive portion different gray gradation region by said plurality of circular illuminating aperture.
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