CN103325949A - Organic light-emitting diode encapsulating structure and method for manufacturing same - Google Patents

Organic light-emitting diode encapsulating structure and method for manufacturing same Download PDF

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CN103325949A
CN103325949A CN 201310198699 CN201310198699A CN103325949A CN 103325949 A CN103325949 A CN 103325949A CN 201310198699 CN201310198699 CN 201310198699 CN 201310198699 A CN201310198699 A CN 201310198699A CN 103325949 A CN103325949 A CN 103325949A
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step
substrate
emitting diode
photoresist
light emitting
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CN 201310198699
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唐凡
高昕伟
邹成
高娟
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四川虹视显示技术有限公司
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Abstract

The invention discloses an organic light-emitting diode encapsulating structure. The organic light-emitting diode encapsulating structure comprises a substrate, a cover plate and an organic light-emitting diode which is located on the substrate. The substrate and the cover plate form the encapsulating structure through binding materials of the edge of the substrate in a binding mode. The organic light-emitting diode comprises an anode of the upper surface of the substrate, an organic layer and a cathode, wherein the organic layer and the cathode are overlaid on the anode in sequence. Physical gap pillars are arranged on the inner surface of the cover plate, blank zones which correspond to the physical gap pillars in shape and size are arranged on the cathode and the organic layer, the physical gap pillars are just located within the blank zones, and the height of each physical gap pillar is larger than the sum of the thickness of the cathode of the organic light-emitting diode and the thickness of the organic layer of the organic light-emitting diode. The invention further discloses a method for manufacturing the encapsulating structure. When the organic light-emitting diode encapsulating structure is deformed under the action of external force, the cover plate firstly is contacted with the physical gap pillars, the organic light-emitting diode is prevented from being damaged, and the service life of the organic light-emitting diode is prolonged.

Description

一种有机发光二极管封装结构及其制备方法 An organic light emitting diode package structure and method of preparation

技术领域 FIELD

[0001] 本发明属于有机电致发光显示技术领域,具体涉及一种有机发光二极管的封装结构及其制备方法。 [0001] The present invention pertains to an organic electroluminescent display technology, and in particular relates to a package structure and a method for preparing an organic light emitting diode.

背景技术 Background technique

[0002] 有机电致发光二极管(0LED),也叫有机发光二极管,其发光原理是给特定的有机材料施加电流,使电能转化为光能,从而发光,有机发光二极管具有全固态、主动发光、高亮度、高对比度、超薄超轻、低功耗、无视角限制、工作温度范围广等特性,被认为是下一代的平面显示的主力军。 [0002] The organic light-emitting diode (0LED), also known as organic light-emitting diode, the emission current principle is applied to a specific organic material, so that electrical energy into light, to emit light, the organic light emitting diode having a solid-state, active light, high brightness, high contrast, slim and lightweight, low power, non-limiting perspective, characteristics such as wide operating temperature range, the main force is considered to be the next generation flat display. 然而,OLED显示器,尤其是位于其中的电极和有机材料对于诸如氧气和湿气的外部环境因素极敏感,随着使用时间的增加,环境中的水气与氧气很容易渗入器件内部,使得金属电极与有机材料之间剥离、材料裂解和电极氧化,进而产生暗点,并且黑点随时间的增加会迅速扩大,这会大幅降低显示器件的发光强度和发光均匀度等发光品质,最终会导致整个器件损坏,大大缩短器件的寿命。 However, OLED displays, in particular an electrode therein and an organic material sensitive to extreme external environmental factors such as moisture and oxygen, with the increase of time, water in the environment is very permeable to air and oxygen inside the device, such that the metal electrode between the organic material and the peeling, cracking and oxidation of the electrode material, thereby generating dark spots and dark spots will rapidly expand with increasing time, which can significantly reduce the quality of the light emission intensity and light emission uniformity of the light emitting display device, etc., eventually will cause the entire damage to the device, greatly reducing the life of the device. 因此,对OLED器件良好的封装是延长OLED器件寿命的最重要方式。 Thus, the package of good OLED devices are the most important way to prolong the life of the OLED device.

[0003] 传统的OLED封装工艺采用粘结剂粘结基板和封装盖板构成一气密空间形成对OLED器件保护的方法,此方法工艺成熟、简单并且坚固但,对于大尺寸器件的封装,由于盖板容易受重力等外力因素而变形,使盖板碰触到器件而使器件受到损坏;同时针对柔性器件,在采用柔性高分子薄膜作为盖板封装的时候,在器件弯曲、折叠的时候很容易造成封装薄膜于器件发光区域碰触而损坏器件。 [0003] OLED conventional packaging technology and the package substrate using adhesive bonding a cover plate to form an airtight space OLED device protection method, which mature technology, but is simple and robust, the device for large-size package, since the cover plate easily deformed by external factors such as gravity, so that the device touches the cover device from being damaged; while for a flexible device, when a flexible polymer film as a lid of the package, the device is easily bent, folded when causing damage to the package film touch device in the device light-emitting region. 针对盖板封装的缺陷,人们开始把目光转向薄膜封装,薄膜封装是在OLED器件阴极表面沉积多层薄膜,其中以Vitex System的Barix封装技术为代表,这事一种基于复合物的途径来密封OLED的方法,在器件阴极表面制备有机、无机交替的多层薄膜,但是薄膜封装还是会有针孔产生,设备投资高,生产效率低,目前工艺不成熟。 Cover the defects of the package, people began to look to the package film, the film is deposited multilayer film packaging device OLED cathode surface, which Barix Vitex System of packaging technology as represented, this matter is one kind of sealed composite based approach the method of the OLED, the cathode surface to prepare an organic device, an inorganic multilayer film alternately, but have pinholes or the film package, high equipment investment, production efficiency is low, the current immature technology.

发明内容 SUMMARY

[0004] 本发明的目的在于克服现有技术中的上述问题,提供一种适用于大面积盖板封装和薄膜封装结构且在封装结构变形情况下仍能保护有机发光二极管器件不受损坏的有机发光二极管封装结构及其制备方法。 [0004] The object of the present invention is to overcome the above problems of the prior art, there is provided a package suitable for large area cover and the thin film encapsulation structure, and deformation of the package structure in the organic light emitting diode device is still protected from damage organic LED package structure and a preparation method.

[0005] 为解决上述技术问题,本发明采用以下技术方案: [0005] To solve the above problems, the present invention employs the following technical solution:

[0006] —种有机发光二极管封装结构,包括基板、盖板和位于基板上的有机发光二极管,所述基板和盖板通过设置于基板边缘的粘结材料粘结形成有机发光二极管的密封结构,所述有机发光二极管包括设置于基板上的阳极和依次叠加在阳极上面的有机层和阴极,其特征在于:所述盖板的内表面上设有物理间隙柱,所述阴极和有机层上设有形状、大小与物理间隙柱对应的空白区域,所述物理间隙柱正好位于所述空白区域内,所述物理间隙柱的高度大于有机发光二极管阴极和有机层厚度之和。 [0006] - organic light emitting diode package structure, comprising a substrate, a cover plate and a seal arrangement positioned on the organic light emitting diode substrate, the substrate and a cover disposed on the adhesive bonding is formed by the edge of the substrate material of the organic light emitting diode, the organic light emitting diode includes an anode disposed on the substrate and the anode are sequentially superimposed on the upper organic layer and a cathode, characterized in that: the physical gap with the inner surface of the cover on the post, disposed on the cathode and the organic layer have shape, size, and physical gap corresponding to a blank area of ​​the column, the column is just a physical gap located within the blank area, the height of the column is greater than the physical gap the organic light emitting diode and the cathode and the organic layer thickness.

[0007] 进一步地,有机发光二极管阴极和有机层上设置的空白区域可以延伸至基板的上表面,即空白区域贯穿有机发光二极管的阴极、有机层及阳极,相应的,所述物理间隙柱的高度大于有机发光二极管阴极、有机层与阳极厚度之和。 [0007] Further, the organic light emitting diode and the cathode of the blank area is provided on the organic layer may extend to the upper surface of the substrate, i.e., a blank area through the cathode, an organic layer and an anode of the organic light emitting diode, corresponding to the physical gap column the organic light emitting diode is greater than the height of the cathode, the thickness of the organic layer and the anode.

[0008] 进一步地,空白区域占有机发光二极管的阴极和有机层表面积的20〜70%。 [0008] Further, the blank area occupied and the cathode of the organic light emitting diode layer surface area is 20~70%.

[0009] 进一步地,全部或部分有机发光二极管的阴极和有机层上设有形状、大小与物理间隙柱对应的空白区域。 [0009] Further, all or a portion of the cathode of the organic light emitting diode and the organic layer is provided with a blank area of ​​the shape, the size of the physical gap corresponding to the column.

[0010] 进一步地,全部或部分有机发光二极管的阴极、有机层和阳极上设有形状、大小与物理间隙柱对应的空白区域。 [0010] Further, all or a portion of the cathode of the organic light emitting diode, a blank area is provided with a shape, size, and physical gap corresponding to the column on the organic layer and the anode.

[0011] 进一步地,所述物理间隙柱的材质为光敏感树脂、无机绝缘材料或其他种类绝缘材料。 [0011] Further, the physical gap material for light-sensitive resin column, an inorganic insulating material, or other type of insulating material.

[0012] 进一步地,所述物理间隙柱的材质为丙烯酸环氧丙酯、甲基丙烯酸环氧丙酯、甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸正丁酯、甲基聚丙烯酸6,7-环氧庚酯、甲基丙烯酸-2-羟基乙酯等单体的均聚物或共聚物、三氧化二铝、氮化硅或二氧化硅。 [0012] Further, the physical gap material column is glycidyl acrylate, glycidyl methacrylate, methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, poly methyl 6,7-epoxy-heptyl acrylate, methacrylate, 2-hydroxyethyl methacrylate monomer such as a homopolymer or copolymer, aluminum oxide, silicon nitride or silicon dioxide.

[0013] 进一步地,所述有机层包括至少一层发光层。 [0013] Further, the organic layer includes at least one light emitting layer.

[0014] 进一步地,所述有机发光二极管还包括空穴注入层、空穴传输层、电子传输层或电子注入层。 [0014] Further, the organic light emitting diode further comprises a hole injection layer, a hole transport layer, an electron transport layer or electron injection layer.

[0015] 进一步地,对于阴极和有机层上设置空白区域的有机发光二极管封装结构的制备方法,包括以下步骤: [0015] Further, a method is provided for preparing a blank area of ​​the cathode and the organic layer of the organic light emitting diode package structure, comprising the steps of:

[0016] 步骤I将盖板通过UV清洗或等离子清洗,烘干备用; [0016] Step I or the cover plate by UV cleaning, plasma cleaning, drying standby;

[0017] 步骤2对于材质为光敏感树脂的物理间隙柱的制备,包括分步骤211至214: Preparation 2 [0017] The material of step a light-sensitive resin column physical gap, including substeps 211 to 214:

[0018] 步骤211在盖板表面均匀涂布光敏感树脂,然后安装掩模板;所述掩模板上的镂空区域与盖板上所设置物理间隙柱的大小、形状和位置一一对应; [0018] In step 211 a uniform light-sensitive resin is coated on the surface plate, and then mounting the reticle; the size of the physical gap is disposed column, the shape and position correspond with the hollow area of ​​the mask cover plate;

[0019] 步骤212曝光:用光束照射步骤211所得盖板,镂空区域的光敏感树脂受光照射发生固化,而被掩模板遮蔽的区域内的光敏感树脂未受光照射也不发生固化; [0019] Exposure Step 212: The resulting beam irradiation step with the cover 211, the light-sensitive resin hollow region irradiated with light is cured, and the light-sensitive resin in the region of the mask is shielded light irradiation were not cured does not occur;

[0020] 步骤213显影:将步骤212所得基板浸入显影溶液,被掩模板遮蔽的区域内的未固化光敏感树脂溶于显影液而被除去,固化的光敏感树脂则不溶,形成物理间隙柱; [0020] The developing step 213: Step 212 The resultant substrate was immersed in a developing solution, the uncured photosensitive resin in the region to be masked mask soluble in a developer and removed, the cured photosensitive resin is insoluble to form a physical gap column;

[0021] 步骤214对步骤213所得物理间隙柱进行烘烤以使其进一步硬化; [0021] step 214 step 213 column obtained by baking a physical gap so as to further harden;

[0022] 对于材质为无机材料的物理间隙柱的制备,包括分步骤221至226: [0022] The material of the column is prepared by physical gap inorganic materials, comprising substeps 221-226:

[0023] 步骤221采用溅射镀膜法在阳极表面沉积无机膜; [0023] Step 221 is deposited using sputter coating an inorganic film on the anode surface;

[0024] 步骤222在无机膜表面均匀涂布光刻胶并烘烤,然后安装掩模板;如果所涂光刻胶为负性光刻胶,则掩模板上的镂空区域与阳极上所设置物理间隙柱的位置、形状一一对应;如果所涂光刻胶为正性光刻胶,则掩模板上的遮蔽区域与阳极上所设置物理间隙柱的位置、形状对应; [0024] Step 222 uniformly coated on the surface of the inorganic resist film and baked, and then mounting the reticle; if the photoresist is a negative photoresist coating, the hollow region disposed on the physical mask with the anode plate the column position of the gap, the shape of one correspondence; if the photoresist is a positive photoresist coating, the areas masked mask plate column with a physical gap provided on the anode positions, corresponding to the shape;

[0025] 步骤223曝光:光束经过掩模板照射至无机膜表面的光刻胶,对于负性光刻胶,镂空区域光刻胶受光照射发生固化,对于正性光刻胶,镂空区域光刻胶受光照射而发生分解; [0025] Exposure step 223: light beam is irradiated to a photoresist mask of the inorganic film on the surface, for a negative photoresist, the photoresist hollow region irradiated with light is cured, for positive photoresist, the photoresist hollow region and decomposed by light irradiation;

[0026] 步骤224显影:将步骤223所得基板浸入显影溶液,未固化或已分解的光刻胶溶解而被除去,剩余光刻胶则覆盖在无机膜上; [0026] The developing step 224: Step 223 The resultant substrate was immersed in a developing solution, the uncured photoresist is dissolved or decomposed and removed, the remaining photoresist overlying the inorganic film;

[0027] 步骤225刻蚀:将步骤224所得基板浸入刻蚀液,被除去光刻胶区域内的无机薄膜没有保护被刻蚀掉,光刻胶覆盖区域的无机膜则被留下;[0028] 步骤226剥离:将步骤225所得基板浸入剥离液,移除覆盖在无机膜上的光刻胶,得到物理间隙柱; [0027] The etching step 225: The etching solution immersing the substrate obtained in step 224, the inorganic thin film is removed in the area not protected by the photoresist is etched away, photoresist coverage area inorganic film were left; [0028 ] step 226 peel: immersing a substrate peeling liquid obtained in step 225, the photoresist overlying the inorganic film is removed to obtain physical gap column;

[0029] 步骤3采用溅射镀膜工艺在基板上制备有机发光二极管的阳极; [0029] Step 3 Preparation of organic light emitting diode an anode on a substrate by a sputtering coating process;

[0030] 步骤4将步骤3所得基板与蒸镀掩模板精确对位,蒸镀掩模板的遮蔽区域与有机发光二极管有机层和阴极上设置的空白区域的形状、大小和位置一一对应; [0030] Step 3 Step 4 The resultant substrate and deposition mask alignment accuracy, the shape of the mask area deposition mask with an organic light emitting diode and an organic layer disposed on a blank area of ​​the cathode, the size and position of one correspondence;

[0031] 步骤5在步骤4所得基板表面依次蒸镀有机层和阴极,蒸镀完成后取下蒸镀掩模板,获得具有空白区域的基板; [0031] Step 5 were deposited in the organic layer and the cathode is removed after the completion of vapor deposition on the substrate surface of the reticle obtained in step 4, a substrate having a blank area;

[0032] 步骤6将步骤5所得的基板与步骤2所得的盖板精确对位,用粘结材料粘接基板和盖板形成有机发光二极管的封装结构。 [0032] Step 6 The substrate obtained in Step 5 and Step 2 The resulting accurate alignment of the cover plate, the structure of the organic light emitting diode package with an adhesive material of the adhesive for forming the substrate and the cover plate.

[0033] 进一步地,对于阳极、阴极和有机层上设置空白区域的有机发光二极管封装结构的制备方法,包括以下步骤: The method of preparing an organic light emitting diode package structure [0033] Further, for the anode, a cathode and an organic layer disposed in the blank area, comprising the steps of:

[0034] 步骤I将盖板通过UV清洗或等离子清洗,烘干备用; [0034] Step I or the cover plate by UV cleaning, plasma cleaning, drying standby;

[0035] 步骤2对于材质为光敏感树脂的物理间隙柱的制备,包括分步骤211至214: Preparation 2 [0035] The material of step a light-sensitive resin column physical gap, including substeps 211 to 214:

[0036] 步骤211在盖板表面均匀涂布光敏感树脂,并安装掩模板,所述掩模板上的镂空区域与盖板上所设置物理间隙柱的大小、形状和位置一一对应; [0036] In step 211 uniformly coated on the surface of light-sensitive resin plate, and mounting the reticle, set the size of the physical gap of the column, the shape and position correspond with the hollow area of ​​the mask cover plate;

[0037] 步骤212曝光:用光束照射步骤211所得盖板,镂空区域的光敏感树脂受光照射发生固化,而被掩模板遮蔽的区域内的光敏感树脂未受光照射也不发生固化; [0037] Exposure Step 212: The resulting beam irradiation step with the cover 211, the light-sensitive resin hollow region irradiated with light is cured, and the light-sensitive resin in the region of the mask is shielded light irradiation were not cured does not occur;

[0038] 步骤213显影:将步骤212所得基板浸入显影溶液,被掩模板遮蔽的区域内的未固化光敏感树脂溶于显影液而被除去,固化的光敏感树脂形成物理间隙住; [0038] The developing step 213: Step 212 The resultant substrate was immersed in a developing solution, the uncured photosensitive resin in the region to be masked mask soluble in a developer and removed, the light-sensitive resin cured to form a physical gap live;

[0039] 步骤214对步骤213所得物理间隙柱进行烘烤使其进一步硬化; [0039] step 214 step 213 column obtained by baking a physical gap further harden;

[0040] 对于材质为无机材料的物理间隙柱的制备,包括分步骤221至226: [0040] The material of the column is prepared by physical gap inorganic materials, comprising substeps 221-226:

[0041] 步骤221采用溅射镀膜法在阳极表面沉积无机膜; [0041] Step 221 is deposited using sputter coating an inorganic film on the anode surface;

[0042] 步骤222在无机膜表面均匀涂布光刻胶并烘烤,然后安装掩模板;如果所涂光刻胶为负性光刻胶,则掩模板上的镂空区域与盖板上所设置物理间隙柱的位置、形状一一对应;如果所涂光刻胶为正性光刻胶,则掩模板上的遮蔽区域与盖板上所设置物理间隙柱的位置、形状对应; [0042] Step 222 uniformly coated on the surface of the inorganic resist film and baked, and then mounting the reticle; if the photoresist is a negative photoresist coating, the hollow region is provided on the mask plate and the cover plate physical gap column position, shape correspondence; if the photoresist is a positive photoresist coating, the column position of the mask physical gap provided on the cover plate and the shielding area, corresponding to the shape;

[0043] 步骤223曝光:光束经过掩模板照射至无机膜表面的光刻胶,对于负性光刻胶,镂空区域光刻胶受光照射发生固化,对于正性光刻胶,镂空区域光刻胶受光照射而发生分解; [0043] Exposure step 223: light beam is irradiated to a photoresist mask of the inorganic film on the surface, for a negative photoresist, the photoresist hollow region irradiated with light is cured, for positive photoresist, the photoresist hollow region and decomposed by light irradiation;

[0044] 步骤224显影:将步骤223所得基板浸入显影溶液,未固化或已分解的光刻胶溶解而被除去,剩余光刻胶则覆盖在无机膜上; [0044] The developing step 224: Step 223 The resultant substrate was immersed in a developing solution, the uncured photoresist is dissolved or decomposed and removed, the remaining photoresist overlying the inorganic film;

[0045] 步骤225刻蚀:将步骤224所得基板浸入刻蚀液,被除去光刻胶区域内的无机薄膜没有保护被刻蚀掉,光刻胶覆盖区域的无机膜则被留下; [0045] The etching step 225: The etching solution immersing the substrate obtained in step 224, the inorganic thin film is removed in the area not protected by the photoresist is etched away, photoresist coverage area inorganic film were left;

[0046] 步骤226剥离:将步骤225所得基板浸入剥离液,移除覆盖在无机膜上的光刻胶,得到物理间隙柱; [0046] Step 226 stripping: stripping solution dipping the resulting substrate in step 225, the photoresist overlying the inorganic film is removed to obtain physical gap column;

[0047] 步骤3采用溅射镀膜工艺在基板上制备一层导电膜; [0047] Step 3 sputtering process using a conductive layer of film on a substrate preparation;

[0048] 步骤4在导电膜表面均匀涂布正性光刻胶并烘烤,然后,将涂布正性光刻胶的基板与掩模板精确对位,所述掩膜板上的遮蔽区域与基板上所设置阳极的大小、形状和位置一一对应,所述掩膜板上的镂空区域与基板上除阳极以外的区域一一对应,还包括与有机发光二极管阳极、有机层和阴极上设置的空白区域的形状、大小和位置一一对应的区域; [0048] Step 4 was uniformly coated on the surface of the conductive film is a positive photoresist and baked, and then, the substrate is coated with the positive photoresist mask alignment accuracy, the mask area with the mask plate anode region provided one-on size, shape and position correspond, hollow plate of the mask and the substrate region other than the anode on the substrate, organic light emitting diode further comprising an anode, a cathode disposed on the organic layer and the shape of the blank area, the size and position of the one-region;

[0049] 步骤5曝光:用光束照射步骤4所得基板,被掩模板遮蔽的区域,所涂正性光刻胶不发生分解,镂空区域内的光刻胶则受光束照射发生分解; [0049] Exposure Step 5: Step 4 is irradiated with a light beam obtained substrate, the mask region is shielded, the applied positive resist without decomposition the photoresist in the region of the hollow beam is irradiated by the decomposition;

[0050] 步骤6显影:将步骤5所得基板浸入显影液中,发生分解反应的正性光刻胶溶于显影液中,未发生分解反应的光刻胶覆盖在导电膜表面; [0050] Step 6 Development: Step 5 The resultant substrate was immersed in the developing solution, the decomposition reaction occurs in the positive photoresist is dissolved in a developing solution, the decomposition reaction of the photoresist covering the conductive film surface did not occur;

[0051 ] 步骤7刻蚀:将步骤6所得基板浸入刻蚀液中,表面没有正性光刻胶保护的导电膜被刻蚀掉,表面有正性光刻胶保护的导电膜则被留下; [0051] Step 7 etching: immersing in an etching solution obtained in step 6 of the substrate, the conductive film surface is not protected by a positive photoresist is etched away, the surface conductive film positive photoresist were left protected ;

[0052] 步骤8剥离:将步骤7所得基板浸入剥离液中,除去导电膜表面的正性光刻胶,剩余导电膜即为阳极; [0052] Step 8 Separation: The resultant substrate was immersed in Step 7 was peeled off, removing the positive photoresist surface of the conductive film, the conductive film remaining is the anode;

[0053] 步骤9将步骤8所得基板与蒸镀掩模板精确对位,蒸镀掩模板的遮蔽区域与有机发光二极管有机层和阴极上设置的空白区域的形状、大小和位置一一对应; [0053] Step 8 Step 9 The resultant substrate and the vapor deposition mask alignment accuracy, the mask area deposition mask with an organic light emitting diode and the organic layer shape, size and position of the blank area is provided on the cathode-one correspondence;

[0054] 步骤10在步骤9所得基板表面依次蒸镀有机层和阴极,蒸镀完成后取下蒸镀掩模板,获得具有空白区域的基板; [0054] Step 10 were deposited in the organic layer and the cathode substrate having a blank area, after the completion of vapor deposition mask is removed, in step 9 the resulting substrate surface;

[0055] 步骤11将步骤10所得的基板与步骤2所得的盖板精确对位,用粘结材料粘接基板和盖板形成有机发光二极管的封装结构。 [0055] Step 11 The board 10 obtained in Step 2 and Step cover precise alignment obtained, organic light emitting diode package structure formed by the bonding material bonding the substrate and the cover plate.

[0056] 进一步地,盖板内物理间隙柱的制备过程中可将步骤2重复若干次以获得规定高度的物理间隙柱。 [0056] Further, the preparation of the physical gap cover plate column may be repeated several times to obtain a step 2 a predetermined physical gap height column.

[0057] 与现有技术相比,本发明的有益效果之一是: [0057] Compared with the prior art, one of the advantages of the present invention are:

[0058] 首先,本发明所述的有机发光二极管封装结构在盖板内表面上设置高度大于有机发光二极管阴极和有机层高度之和的物理间隙柱,当封装结构的盖板受外力作用发生变形时,物理间隙柱通过有机发光二极管阴极和有机层上的空白区域抵住有机发光二极管的阳极或基板,避免变形的盖板直接作用于有机发光二极管的阴极和有机层致使其破坏,提高有机发光二极管的使用寿命; [0058] First, an organic light emitting diode package according to the present invention is provided in the cover is larger than the height of the upper surface of the organic light emitting diode and the cathode of the organic layer and the physical gap height of the column, when the lid of the package is deformed by an external force , the physical gap against the column or the anode substrate of the organic light emitting diode and the cathode of the OLED by an empty area on the organic layer, to avoid direct effect of deformation of the cover which causes destruction of a cathode and an organic layer in an organic light emitting diode, an organic light emitting increase diode life;

[0059] 其次,本发明所述的有机发光二极管封装结构尤其适用于大尺寸有机发光二极管面板和柔性有机发光二极管面板; [0059] Next, the organic light emitting diode package according to the present invention is particularly suitable for a large-sized organic light emitting diode panel and a flexible organic light emitting diode panel;

[0060] 最后,本发明所述有机发光二极管封装结构的制备方法,仅需在封装盖板上设置物理间隙柱或在阳极形成工艺中改变掩模板形状,通用性好。 [0060] Finally, the present invention is the method for preparing an organic light emitting diode package structure, only a physical gap provided in the column cover or on the package formed in the anode mask shape changing process, common good.

附图说明 BRIEF DESCRIPTION

[0061] 图1为本发明一种实施例的有机发光二极管封装机构的侧剖视图; [0061] FIG An organic light emitting diode package side mechanism sectional view of an embodiment of the present invention;

[0062] 图2为本发明另一实施例中的有机发光二极管封装机构的侧剖视图。 Examples of the side of the organic light emitting diode package means sectional view [0062] FIG 2 a further embodiment of the present invention.

具体实施方式 detailed description

[0063] 为了使本实发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。 [0063] To make the objectives, technical solutions and advantages of the present invention will become more apparent from the solid, the following embodiments and the accompanying drawings, the present invention will be further described in detail. 应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。 It should be understood that the specific embodiments described herein are only intended to illustrate the present invention and are not intended to limit the present invention.

[0064] 实施例1 [0064] Example 1

[0065] 如图1所示,本实施例中的一种有机发光二极管封装结构,包括基板1、盖板3和位于基板I上的有机发光二极管2,设置于基板I边缘的粘结材料4将基板I和盖板3粘结起来形成有机发光二极管2的封装结构,这里的有机发光二极管包括设置于基板上的阳极21和依次叠加在阳极21上面的有机层22和阴极23 ;盖板3的内表面上还设有物理间隙柱5,阴极23和有机层22上设有形状、大小与物理间隙柱对应的空白区域6,物理间隙柱5正好位于此空白区域6内,物理间隙柱5的高度大于有机发光二极管2阴极23和有机层22厚度之和。 [0065] As shown in FIG. 1, an organic light emitting diode package structure in the present embodiment, the adhesive material 4 comprises a substrate 1, the cover plate 3 and positioned on the substrate I organic light emitting diode 2 disposed on the edge of the substrate I I 3 and the cover plate substrate to form a bonded structure of the organic light emitting diode package 2, where the organic light emitting diode includes an anode disposed on the substrate 21 and an organic layer 22 and the cathode 23 are sequentially superimposed on top of the anode 21; the cover 3 on the inner surface of the column is also provided with a physical gap 5, a cathode and an organic layer 23 has a shape, size, and physical gap corresponding to the blank area on the post 226, post physical gap 5 is located just within this blank area 6, a physical gap column 5 the organic light emitting diode 2 is greater than the height of the cathode 23 and 22 and the thickness of the organic layer. 当封装结构的盖板3受外力作用发生变形时,物理间隙柱5通过有机发光二极管2的阴极23和有机层22上的空白区域6抵住有机发光二极管2的阳极21,避免变形的盖板3直接作用于有机发光二极管2的阴极23和有机层22致使其破坏,提高有机发光二极管2的使用寿命。 When the cover 3 of the package by the external force is deformed by a physical gap 5 column 2 cathode of the OLED anode 23 and the blank area on the organic layer 22 against the organic light emitting diode 6 2 21, to avoid deformation of the cover plate 3 is directly applied to the cathode of the organic light emitting diode 2 and 23 resulting in the destruction of the organic layer 22, to improve the life of the organic light emitting diode 2.

[0066] 为了保证封装结构的发光亮度和视角,空白区域6占有机发光二极管2的阴极23和有机层22表面积的20%。 [0066] In order to ensure the luminance and viewing angle of the cathode structure of the package, the blank area occupied light emitting diode 6 2 23 and 20% of the surface area of ​​the organic layer 22.

[0067] 本实施例中全部有机发光二极管2的阴极23和有机层22上均设有形状、大小与物理间隙柱5对应的空白区域6。 [0067] In the present embodiment, all of the organic light emitting diode 23 and the cathode 2 of the organic layer 22 has a blank area of ​​the shape, the size of the physical gap corresponding to the column 5 6.

[0068] 本实施例中的物理间隙柱5的材质为丙烯酸环氧丙酯、甲基丙烯酸环氧丙酯、甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸正丁酯、甲基聚丙烯酸6,7-环氧庚酯、甲基丙烯酸-2-羟基乙酯等单体的均聚物或共聚物等光敏感树脂。 [0068] Example physical gap material 5 of the present embodiment the column is glycidyl acrylate, glycidyl methacrylate, methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, methyl polyacrylic acid, 6,7-epoxy-heptyl methacrylate, 2-hydroxyethyl methacrylate monomer such as a homopolymer or copolymer of a light-sensitive resin and the like.

[0069] 本实施例中的有机发光二极管的有机层22可以只包括至少一层发光层,也可以包括至少一层发光层和空穴注入层、空穴传输层、电子传输层及电子注入层,即该有机发光二极管封装结构适用于各种有机发光二极管。 [0069] The organic layer of the organic light emitting diode of Example 22 of the present embodiment may comprise only at least one light emitting layer may also include at least one light emitting layer and a hole injection layer, a hole transport layer, an electron transport layer and an electron injection layer , i.e. the organic light emitting diode package structure for a variety of organic light emitting diodes.

[0070] 本实施例所述有机发光二极管封装结构的制备方法,包括以下步骤: [0070] The preparation method of the organic light emitting diode package structure of the present embodiment, comprising the steps of:

[0071] 步骤I将盖板3通过UV清洗或等离子清洗,烘干备用; [0071] Step I The cover plate 3 by UV cleaning or plasma cleaning, drying standby;

[0072] 步骤2在盖板3内表面涂布光敏感树脂,并将内表面涂布光敏感树脂的盖板3与掩模板精确对位,所述掩模板的镂空区域与所设置物理间隙柱的形状、大小和位置一一对应; [0072] Step 2 in the cover 3 coated on the surface of light-sensitive resin, and the inner surface of the cover plate 3 is coated with a light-sensitive resin mask alignment accuracy, the mask region of the hollow column set physical gap the shape, size and position of the to-one correspondence;

[0073] 步骤3曝光:用光束照射步骤2所得盖板3,光束透过镂空区域照射到光敏感树脂使被照射的光敏感树脂固化,被掩模板遮蔽的区域没有光照射,区域内的光敏感树脂不发生固化; [0073] Exposure Step 3: Step 2 The resulting light beam 3 is irradiated with the cover plate, the hollow beam is irradiated through the light-sensitive area of ​​the light-sensitive resin cured resin is irradiated, the masked area is not irradiated with light mask, light in the area cured resin is not sensitive;

[0074] 步骤4显影:经过曝光的盖板3浸泡在显影液中,固化的光敏感树脂形成物理间隙柱5,未固化的树脂则被显影液溶解而除去; [0074] Step 4 Development: After exposure the cover plate 3 immersed in the developer, the cured photosensitive resin column to form a physical gap 5, the uncured resin were removed by dissolving the developer;

[0075] 步骤5将步骤4所得物理间隙柱5进行烘烤使其进一步硬化; [0075] Step 5 Step 4 The resulting physical gap column 5 further hardening by baking;

[0076] 步骤6采用溅射镀膜工艺在基板I上制备有机发光二极管2的阳极21 ; [0076] The anode of the organic light emitting diode 6 Step 2 was prepared on a substrate 21 by a sputtering coating process I;

[0077] 步骤7将步骤6所得基板I与蒸镀掩模板精确对位,并依次蒸镀有机层22和阴极23,其中,蒸镀掩模板的遮蔽区域与有机发光二极管有机层和阴极上设置的空白区域的形状、大小和位置对应; [0077] Step 6 Step 7 The resulting substrate I and the vapor deposition mask alignment accuracy, and the organic layer 22 and the cathode 23 are sequentially deposited, wherein the shielding region is provided on the vapor deposition mask and the organic layer and the organic light emitting diode cathode shape, size and position corresponding to the blank region;

[0078] 步骤8将步骤7所得的基板I与步骤5所得的盖板3精确对位,用粘结材料4粘接基板I和盖板3形成有机发光二极管2的封装结构。 [0078] Step 7 Step 8 I and the resultant substrate obtained in step 5 accurate alignment plate 3, forming a package structure of the organic light emitting diode 2 with an adhesive material and a cover plate 4 bonded substrate I 3.

[0079] 实施例2 [0079] Example 2

[0080] 本实施例中的有机二极管的封装结构同实施例1中有机二极管的封装结构,如图1所示。 [0080] The present package structure of the embodiment of the organic diode package structure in Example 1 with organic diode embodiment, as shown in FIG.

[0081] 为了保证封装结构的发光亮度和视角,本实施例中物理间隙柱5的底面积占有机发光二极管2的阴极23和有机层22表面积的40%。 [0081] In order to ensure the luminance and viewing angle of the package, the bottom area of ​​the cathode 2 of this column 5 occupied embodiment light emitting diode 23 and a physical gap embodiments 40% of the surface area of ​​the organic layer 22.

[0082] 本实施例中仅部分有机发光二极管2的阴极23和有机层22上设有形状、大小与物理间隙柱5对应的空白区域6,因为相比红光和蓝光,绿光的发光效率较高,选择将空白区域6设置于发绿光的有机发光二极管的阴极23和有机层22上,并在盖板3内表面的对应位置设置物理间隙柱5,代替传统调整不同发光颜色二极管像素尺寸来调整不同颜色发光亮度比例的做法。 [0082] In the present embodiment, only a part of the organic light emitting diode 23 and the cathode of the organic layer 2 has a shape, size, and column 5 the blank area corresponding to the physical gap 226, since the light emission efficiency compared to red and blue light, green light high, selecting the blanks 6 is disposed on the organic light emitting diode emits green light 23 and the cathode of the organic layer 22, and set the physical gap column 5 at a corresponding position of the inner surface of the cover plate 3, instead of the traditional adjustment of different emission colors diode pixel size ratio to adjust the brightness of different emission colors approach.

[0083] 本实施例中的物理间隙柱5的材质为三氧化二铝、氮化硅或二氧化硅。 Material 5 [0083] This physical gap in the embodiment is a column of aluminum oxide, silicon nitride or silicon dioxide.

[0084] 本实施例中的有机发光二极管的有机层22可以只包括至少一层发光层,也可以包括至少一层发光层和空穴注入层、空穴传输层、电子传输层及电子注入层,即该有机发光二极管封装结构适用于各种有机发光二极管。 [0084] The organic layer of the organic light emitting diode of Example 22 of the present embodiment may comprise only at least one light emitting layer may also include at least one light emitting layer and a hole injection layer, a hole transport layer, an electron transport layer and an electron injection layer , i.e. the organic light emitting diode package structure for a variety of organic light emitting diodes.

[0085] 本实施例所述有机发光二极管封装结构的制备方法,包括以下步骤: [0085] The preparation method of the present embodiment, the organic light emitting diode package structure, comprising the steps of:

[0086] 步骤I将盖板3通过UV清洗或等离子清洗,烘干备用; [0086] Step I The cover plate 3 by UV cleaning or plasma cleaning, drying standby;

[0087] 步骤2采用溅射镀膜工艺在盖板3表面沉积无机膜; [0087] Step 2 A sputtering process for depositing an inorganic film on the surface of the cover plate 3;

[0088] 步骤3在步骤2所得盖板3的无机膜表面均匀涂布负性光刻胶并烘烤,然后,将所得盖板与掩模板精确定位,所述掩模板的镂空区域与所设置物理间隙柱的形状、大小和位 [0088] Step 3 uniformly the inorganic surface of the film obtained in step 2 of the cover plate 3 is coated and baked negative photoresist, then, the cover plate and reticle resulting precise positioning, the template mask hollow region provided with shape, size and position of the physical gap column

置——对应; Set - corresponds;

[0089] 步骤4曝光:用光束照射步骤3所得盖板3,光速透过镂空区域照射到光敏感树脂使被照射的光敏感树脂固化,被掩模板遮蔽的区域没有光照射,区域内的光敏感树脂也不发生固化反应; [0089] Exposure Step 4: The resulting beam irradiation step of the cover 33, the speed of light through the hollow region is irradiated to the light-sensitive resin of the light-sensitive resin cured by irradiation, a mask is shielded area not irradiated with light, the light in the region sensitive resin curing reaction does not occur;

[0090] 步骤5显影:经过曝光的盖板3浸泡在显影液中,固化的负性光刻胶不溶于显影液仍覆盖在无机膜表面,未固化的树脂则溶于显影液被除去,对应区域的无机膜暴露在外;[0091 ] 步骤6刻蚀:将步骤5所得的盖板3浸入蚀刻液中,没有固化负性光刻胶保护的区域的无机薄膜被除去,剩余被光刻胶覆盖的无机膜。 [0090] Step 5 Development: After exposure the cover plate 3 immersed in the developer, the cured negative photoresist is insoluble in the developer still covered the surface of the inorganic film, an uncured resin is soluble in a developer is removed, the corresponding inorganic film exposed region; [0091] step 6 etching: the cover plate 3 obtained in step 5 was immersed in an etching solution, not cured inorganic thin film of negative photoresist protected regions is removed, the remaining photoresist is covered the inorganic film.

[0092] 步骤7剥离:将步骤6所得基板3浸入剥离液中,除去覆盖在无机膜上的固化光刻胶得到设有物理间隙柱5的盖板3 ; [0092] Step 7 Separation: Step 6 The resultant substrate was immersed in 3 stripping solution to remove the photoresist covering the physical gap the cover plate 3 is provided to give the column 5 in the cured inorganic film;

[0093] 步骤8采用溅射镀膜工艺在基板I上制备有机发光二极管2的阳极21 ; [0093] The anode of the organic light emitting diode 8 Step 2 was prepared on a substrate 21 by a sputtering coating process I;

[0094] 步骤9将步骤8所得基板I与蒸镀掩模板精确对位,依次蒸镀有机层22和阴极23,其中,蒸镀掩模板的遮蔽区域与有机发光二极管有机层和阴极上设置的空白区域的形状、大小和位置对应; [0094] Step 8 Step 9 I resultant substrate and the vapor deposition mask alignment accuracy, were deposited in the organic layer 22 and the cathode 23, wherein the shielding region of the vapor deposition mask and the organic light emitting diode, and a cathode an organic layer disposed shape, size and position corresponding to the blank region;

[0095] 步骤10将步骤9所得的基板I与步骤7所得的盖板3精确对位,用粘结材料4粘接基板I和盖板3形成有机发光二极管2的封装结构。 [0095] Step 109 obtained in step I with the substrate obtained in step 7 precise alignment of the cover plate 3, forming a package structure of the organic light emitting diode 2 with a bonding material 4 and the cover plate 3 bonded substrate I.

[0096] 实施例3 [0096] Example 3

[0097] 如图2所示,本实施例中的一种有机发光二极管封装结构,包括基板1、盖板3和位于基板I上的有机发光二极管2,设置于基板I边缘的粘结材料4粘结将基板I和盖板3粘结起来形成有机发光二极管2的封装结构,这里的有机发光二极管包括设置于基板上的阳极21和依次叠加在阳极21上面的有机层22和阴极23 ;所述盖板3的内表面上设有物理间隙柱5,阴极23、有机层上22和阳极21上设有形状、大小与物理间隙柱对应的空白区域6,物理间隙柱5正好位于空白区域6内,物理间隙柱5的高度大于有机发光二极管2阴极23、有机层22和阳极21的厚度之和。 [0097] 2, an organic light emitting diode package structure in the present embodiment, the adhesive material 4 comprises a substrate 1, the cover plate 3 and positioned on the substrate I organic light emitting diode 2 disposed on the edge of the substrate I bonding the substrate and the cover plate 3 I to form a bonded structure of the organic light emitting diode package 2, where the organic light emitting diode includes an anode disposed on the substrate 21 and an organic layer 22 and the cathode 23 are sequentially superimposed on top of the anode 21; the provided on the inner surface of said cover plate 3 of the physical gap column 5, a cathode 23, is provided on the organic layer, the shape, size, and physical gap corresponding to a blank area of ​​the column 21 22 and the anode 6, the column 5 is located just a physical gap blank area 6 the height of the column 5 is larger than the physical gap the organic light emitting diode 23 the cathode 2, and the thickness of the organic layer 22 and the anode 21. 当封装结构的盖板3受外力作用发生变形时,物理间隙柱5通过有机发光二极管2的阴极23、有机层22和阳极21上设置的空白区域6抵住有机发光二极管2的基板1,避免变形的盖板3直接作用于有机发光二极管2的阴极23和有机层22致使其破坏,提闻有机发光_■极管2的使用寿命。 When the deformation of the plate package 3 by an external force, the organic light emitting diode 6 against a blank area of ​​a physical gap 5 column 2 through the cathode 23 of the organic light emitting diode, the organic layer 21 provided on the substrate 2 and the anode 22 of 1, to avoid 3 to a direct effect of deformation of the cover 2 organic light emitting diode 23 and a cathode 22 resulting in the destruction of the organic layer, extract the organic light emitting smell diode lifetime _ ■ 2.

[0098] 为了保证封装结构的发光亮度和视角,本实施例中物理间隙柱5的底面积占有机发光二极管2的阴极23、有机层22和阳极表面积的70%。 [0098] In order to ensure the luminance and viewing angle of the package, the bottom area of ​​the cathode 2 of this column 5 occupied light emitting diode in Example embodiments physical gap 23, 70% of the surface area of ​​the anode 22 and organic layers.

[0099] 本实施例中的部分有机发光二极管2的阳极21、阴极23和有机层22上设有形状、大小与物理间隙柱5对应的空白区域6。 [0099] This anode of the OLED of Example 2 in the embodiment is provided with a blank area shape portion, corresponding to the size of the column 5 on the physical gap 21, a cathode 23 and an organic layer 226.

[0100] 本实施例中的物理间隙柱5的材质为丙烯酸环氧丙酯、甲基丙烯酸环氧丙酯、甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸正丁酯、甲基聚丙烯酸6,7-环氧庚酯、甲基丙烯酸-2-羟基乙酯等单体的均聚物或共聚物等光敏感树脂。 [0100] Examples of the physical gap the material column 5 of the present embodiment as glycidyl acrylate, glycidyl methacrylate, methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, methyl polyacrylic acid, 6,7-epoxy-heptyl methacrylate, 2-hydroxyethyl methacrylate monomer such as a homopolymer or copolymer of a light-sensitive resin and the like.

[0101] 本实施例中的有机发光二极管的有机层22可以只包括至少一层发光层,也可以包括至少一层发光层和空穴注入层、空穴传输层、电子传输层及电子注入层,即该有机发光二极管封装结构适用于各种有机发光二极管。 [0101] The organic layer of the organic light emitting diode of Example 22 of the present embodiment may comprise only at least one light emitting layer may also include at least one light emitting layer and a hole injection layer, a hole transport layer, an electron transport layer and an electron injection layer , i.e. the organic light emitting diode package structure for a variety of organic light emitting diodes.

[0102] 本实施例所述有机发光二极管封装结构的制备方法,包括以下步骤: [0102] The preparation method of the organic light emitting diode package structure of the present embodiment, comprising the steps of:

[0103] 步骤I将盖板3通过UV清洗或等离子清洗,烘干备用; [0103] Step I The cover plate 3 by UV cleaning or plasma cleaning, drying standby;

[0104] 步骤2在盖板3内表面涂布光敏感树脂,并将内表面涂布光敏感树脂的盖板3与掩模板精确对位,所述掩模板的镂空区域与所设置物理间隙柱的形状、大小和位置一一对应; [0104] Step 2 in the cover 3 coated on the surface of light-sensitive resin, and the inner surface of the cover plate 3 is coated with a light-sensitive resin mask alignment accuracy, the mask region of the hollow column set physical gap the shape, size and position of the to-one correspondence;

[0105] 步骤3曝光:用光束照射步骤2所得盖板3,光束透过镂空区域照射到光敏感树脂使被照射的光敏感树脂固化,被掩模板遮蔽的区域没有光照射,区域内的光敏感树脂也不发生固化; [0105] Exposure Step 3: Step 2 The resulting light beam 3 is irradiated with the cover plate, the hollow beam is irradiated through the light-sensitive area of ​​the light-sensitive resin cured resin is irradiated, the masked area is not irradiated with light mask, light in the area sensitive resin curing does not occur;

`[0106] 步骤4显影:经过曝光的盖板3浸泡在显影液中,未固化的树脂则被显影液溶解而除去,固化的光敏感树脂形成物理间隙柱5 ; `[0106] Step 4 Development: After exposure the cover plate 3 immersed in the developer, the developer uncured resin were removed by dissolving, light-sensitive resin cured to form a physical gap column 5;

[0107] 步骤5将步骤4所得物理间隙柱5进行烘烤以使其进一步硬化,得到设有物理间隙柱的盖板3 ; [0107] Step 5 The Step 4 obtained by baking a physical gap column 5 so as to further harden, to obtain physical gap cover plate 3 is provided with the column;

[0108] 步骤6采用溅射镀膜工艺在基板I上制备一层导电层; [0108] Step 6 using the sputtering process on the substrate I is prepared electroconductive layer;

[0109] 步骤7将步骤6所得基板的导电层表面均匀涂布正性光刻胶并烘烤,然后,将所得基板与掩模板精确对位,所述掩膜板上的遮蔽区域与基板上所设置阳极的大小、形状和位置一一对应,所述掩膜板上的镂空区域与基板I上除阳极21以外的区域一一对应,镂空区域还包括与有机发光二极管阳极21、有机层22和阴极21上设置的空白区域6的形状、大小和位置一一对应的区域; [0109] Step 7 Step uniform coating layer surface of the conductive substrate 6 obtained positive photoresist and baked, and then, the resultant substrate and mask alignment accuracy, the shielding area of ​​the mask plate and the substrate provided the anode size, shape and position of correspondence, the hollow region of the mask plate correspond to the substrate region I, regions other than the hollow anode 21 further comprising an organic layer 22 and the anode of the OLED 21 blank areas and a cathode 21 disposed on the shape, size and position of region 6 of the one to one;

[0110] 步骤8曝光:用光束照射步骤7所得基板1,被掩模板遮蔽的区域由于光束照射不至IJ,所涂正性光刻胶不会分解,镂空区域内被照射的光刻胶发生分解反应; [0110] Exposure Step 8: Step 7 The resulting beam is irradiated substrate 1, the mask region is shielded since no light beam is irradiated to IJ, the positive resist coating is not decomposed, the irradiated areas of the photoresist occurs within the hollow the decomposition reaction;

[0111] 步骤9显影:将步骤8所得基板I浸入显影液中,发生分解反应的正性光刻胶溶于显影液中,未发生分解反应的光刻胶覆盖在导电层表面; [0111] Step 9 Development: The substrate obtained in step 8 was immersed in developer I, decomposition reaction occurs in the positive resist dissolved in the developing solution, the photoresist covering the decomposition reaction does not occur in the surface of the conductive layer;

[0112] 步骤10刻蚀:将步骤9所得基板I浸入刻蚀液中,表面没有正性光刻胶保护的导电层被刻蚀掉,表面有正性光刻胶保护的导电层被留下; [0112] Step 10 etching: Step 9 The resulting substrate was immersed in an etching solution I, the surface of the conductive layer not protected by a positive photoresist is etched away, the surface of a positive photoresist protective conductive layer is left ;

[0113] 步骤11剥离:将步骤10所得基板I浸入剥离液中,导电层表面的正性光刻胶溶于剥离液中而被除去,剩余导电层即为有机发光二极管的阳极21 ;[0114] 步骤12将步骤11所得基板I与蒸镀掩模板精确对位,蒸镀掩模板的遮蔽区域与有机发光二极管阳极21、有机层22和阴极23上设置的空白区域的形状、大小和位置一一对应; [0113] Step 11 release: The substrate obtained in step I was immersed in 10 stripping liquid, positive photoresist conductive surface layer is dissolved in a stripping solution is removed, the remaining conductive layer is the anode 21 of the organic light emitting diode; [0114 ] 12 step 11 step I and the resulting substrate precise alignment, the shape of the blank area covered region of the vapor deposition mask and anode of the OLED 21, 22 and the cathode 23 is provided on the organic layer, size and position of a mask vapor deposition a correspondence;

[0115] 步骤13在步骤12所得基板I的表面依次蒸镀有机层22和阴极23,蒸镀完成后取下掩模板,获得具有空白区域的基板I ; [0115] Step 13 are sequentially deposited organic layer 22 and the cathode 23 on a surface of the substrate I is obtained in step 12, after the completion of the vapor deposition mask is removed, a substrate I having a blank area;

[0116] 步骤14将步骤13所得的基板I与步骤6所得的盖板3精确对位,用粘结材料4粘接基板I和盖板3形成有机发光二极管2的封装结构。 [0116] the substrate 6 obtained in step I obtained in step 13 to step 14 to accurately position the cover plate 3, forming a package structure of the organic light emitting diode 2 with a bonding material 4 and the cover plate 3 bonded substrate I.

[0117] 进一步地,盖板内物理间隙柱5的制备过程中可将步骤2至5重复若干次以获得规定高度的物理间隙柱。 [0117] Further, the preparation of the physical gap cover plate column 5 Step 2-5 may be repeated several times to obtain a predetermined height of the column of physical gap.

[0118] 尽管这里参照本发明的多个解释性实施例对本发明进行了描述,但是,应该理解,本领域技术人员可以设计出很多其他的修改和实施方式,这些修改和实施方式将落在本申请公开的原则范围和精神之内。 [0118] While the invention herein with reference to a plurality of explanatory embodiment of the present invention has been described, it should be understood that those skilled in the art may devise numerous other modifications and embodiments, such modifications and embodiments fall within the present within the scope and spirit of the principles of open applications.

Claims (10)

  1. 1.一种有机发光二极管封装结构,包括基板、盖板和位于基板上的有机发光二极管,所述基板和盖板通过设置于基板边缘的粘结材料粘结形成有机发光二极管的密封结构,所述有机发光二极管包括设置于基板上的阳极和依次叠加在阳极上面的有机层和阴极,其特征在于:所述盖板的内表面设有物理间隙柱,所述阴极和有机层上设有形状、大小与物理间隙柱对应的空白区域,所述物理间隙柱位于所述空白区域内,所述物理间隙柱的高度大于有机发光二极管阴极和有机层的厚度之和。 An organic light emitting diode package structure, comprising a substrate, a cover plate positioned on the organic light emitting diode substrate, the substrate and the cover seal is formed by the organic light emitting diode structure disposed on the adhesive bonded edge of the substrate material, the said organic light emitting diode includes an anode disposed on the substrate and the anode are sequentially superimposed on the upper organic layer and a cathode, characterized in that: said inner surface of the cover is provided with a physical gap column shape provided on the cathode and the organic layer , the physical size of the blank area corresponding to the column space, the physical gap of the post positioned in the blank area, the physical height of the gap is greater than the thickness of the column the organic light emitting diode and a cathode and an organic layer.
  2. 2.根据权利要求1所述的有机发光二极管封装结构,其特征在于:有机发光二极管阴极和有机层上设置的空白区域延伸至基板的上表面,相应的,所述物理隙柱的高度大于有机发光二极管阴极、有机层与阳极的厚度之和。 2. The organic light emitting diode package according to claim 1, wherein: the organic light emitting diode and the cathode of the blank area is provided on the organic layer extending to the upper surface of the substrate, the corresponding height of the column is greater than the physical gap of the organic cathode of the LED, the thickness of the organic layer and the anode.
  3. 3.根据权利要求1或2所述的有机发光二极管封装结构,其特征在于:所述空白区域占有机发光二极管的阴极和有机层表面积的20〜70%。 The organic light emitting diode package structure of claim 1 or claim 2, wherein: said blank area occupies 20~70% of the light emitting diode and the cathode of the organic layer surface area.
  4. 4.根据权利要求1所述的有机发光二极管封装结构,其特征在于:全部或部分有机发光二极管的阴极和有机层设有形状、大小与物理间隙柱对应的空白区域。 4. The organic light emitting diode package according to claim 1, wherein: all or part of a cathode of the organic light emitting diode and an organic layer provided with a blank area of ​​the shape, the size of the physical gap corresponding to the column.
  5. 5.根据权利要求2所述的有机发光二极管封装结构,其特征在于:全部或部分有机发光二极管的阳极、阴极和有机层上设有形状、大小与物理间隙柱对应的空白区域。 The organic light emitting diode package according to claim 2, wherein: the shape of the blank area is provided, the size of the physical gap corresponding to the column on the entire anode, a cathode and an organic layer or an organic light emitting diode portion.
  6. 6.根据权利要求1或2所述的有机发光二极管封装结构,其特征在于:所述物理间隙柱的材质为光敏感树脂或无机无缘材料。 The organic light emitting diode package structure of claim 1 or claim 2, wherein: the physical gap material of a light-sensitive resin column or an inorganic material missed.
  7. 7.根据权利要求6所述的有机发光二极管封装结构,其特征在于:所述物理间隙柱的材质为丙烯酸环氧丙酯、甲基丙烯酸环氧丙酯、甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸正丁酯、甲基聚丙烯酸6,7-环氧庚酯、甲基丙烯酸-2-羟基乙酯等单体的均聚物或共聚物、三氧化二铝、氮化硅或二氧化硅。 7. The organic light emitting diode package according to claim 6, wherein: said material is a physical gap column glycidyl acrylate, glycidyl methacrylate, methyl methacrylate, methacrylic acid homopolymers or copolymers, ethyl, n-butyl methacrylate, polyacrylic acid, methyl 6,7-epoxy-heptyl methacrylate, 2-hydroxyethyl methacrylate monomer and the like, aluminum oxide, nitride, silicon or silicon dioxide.
  8. 8.根据权利要求1或2所述的有机发光二极管封装结构,其特征在于:所述有机层包括至少一层发光层,还包括空穴注入层、空穴传输层、电子传输层或电子注入层。 The organic light emitting diode package structure of claim 1 or claim 2, wherein: said organic layer comprises at least one light emitting layer further comprises a hole injection layer, a hole transport layer, an electron transport layer or electron injection Floor.
  9. 9.一种权利要求1所述的有机发光二极管封装结构的制备方法,其特征在于:包括以下步骤: 步骤I将盖板通过UV清洗或等离子清洗,烘干备用; 步骤2对于材质为高分子绝缘材料的物理间隙柱的制备,包括分步骤211至214: 步骤211在盖板表面均匀涂布光敏感树脂,然后安装掩模板;所述掩模板上的镂空区域与盖板上所设置物理间隙柱的大小、形状和位置一一对应; 步骤212曝光:用光束照射步骤211所得盖板,镂空区域的光敏感树脂受光照射发生固化,而被掩模板遮蔽的区域内的光敏感树脂未受光照射也不发生固化; 步骤213显影:将步骤212所得基板浸入显影溶液,被掩模板遮蔽的区域内的未固化光敏感树脂溶于显影液而被除去,固化的光敏感树脂则不溶,形成物理间隙柱; 步骤214对步骤213所得物理间隙柱进行烘烤以使其进一步硬化; 对于材质为无机材料的物理 Preparation method of the organic light emitting diode package structure as claimed in claim A, characterized by: comprising the following steps: I cover plate by UV cleaning or plasma cleaning, drying standby; Step 2 The material is a polymer preparing an insulating material physical gap column, comprising sub-steps 211 to 214: in step 211 the cover surface of the light-sensitive resin is coated uniformly, and then mounting the reticle; hollow region provided on the mask plate and the cover plate of the physical gap column size, shape and position correspond; exposure step 212: the resulting beam irradiation step with the cover 211, the light-sensitive resin hollow region irradiated with light is cured, while the light-sensitive resin is irradiated with light in the region of the mask were not masked not cured; a developing step 213: step 212 the resultant solution was immersed in a developing substrate is uncured shielding mask in the region of the light-sensitive resin soluble in a developer and removed, the cured photosensitive resin is insoluble to form a physical gap column; step 214 step 213 column obtained by baking a physical gap so as to further harden; made of an inorganic material for physical 间隙柱的制备,包括分步骤221至226: 步骤221采用溅射镀膜法在阳极表面沉积无机膜; 步骤222在无机膜表面均匀涂布光刻胶并烘烤,然后安装掩模板;如果所涂光刻胶为负性光刻胶,则掩模板上的镂空区域与阳极上所设置物理间隙柱的位置、形状一一对应;如果所涂光刻胶为正性光刻胶,则掩模板上的遮蔽区域与阳极上所设置物理间隙柱的位置、形状对应; 步骤223曝光:光束经过掩模板照射至无机膜表面的光刻胶,对于负性光刻胶,镂空区域光刻胶受光照射发生固化,对于正性光刻胶,镂空区域光刻胶受光照射而发生分解; 步骤224显影:将步骤223所得基板浸入显影溶液,未固化或已分解的光刻胶溶解而被除去,剩余光刻胶则覆盖在无机膜上; 步骤225刻蚀:将步骤224所得基板浸入刻蚀液,被除去光刻胶区域内的无机薄膜没有保护被刻蚀掉,光刻胶覆盖区 Preparation gap column, comprising sub-steps 221 to 226: Step 221 is deposited using sputter coating an inorganic film on the anode surface; step 222, photoresist is uniformly coated the surface of the inorganic film and baked, and then mounting the reticle; if the coating the photoresist is a negative photoresist, the mask of the hollow region at the anode plate and the column position of the physical gap is provided, shape correspondence; if the applied photoresist is a positive photoresist, the mask plate masking the anode region provided the physical gap column position, corresponding to the shape; exposure step 223: after the photoresist mask is irradiated beam to the surface of the inorganic film, for a negative photoresist, the photoresist hollow region irradiated with light occurs curing, for positive photoresist, and the hollow areas of the photoresist is decomposed by light irradiation; a developing step 224: immersing the resist developing solution to dissolve the resulting substrate in step 223, an uncured or decomposed and removed, the remaining lithography the inorganic film overlying the adhesive; 225 etching steps: an etching solution immersing the substrate obtained in step 224, the inorganic thin film is removed in the area not protected by the photoresist is etched away, photoresist coverage area 的无机膜则被留下; 步骤226剥离:将步骤225所得基板浸入剥离液,移除覆盖在无机膜上的光刻胶,得到物理间隙柱; 步骤3采用溅射镀膜工艺在基板上制备有机发光二极管的阳极; 步骤4将步骤3所得基板与蒸镀掩模板精确对位,蒸镀掩模板的遮蔽区域与有机发光二极管有机层和阴极上设置的空白区域的形状、大小和位置一一对应; 步骤5在步骤4所得基板表面依次蒸镀有机层和阴极,蒸镀完成后取下蒸镀掩模板,获得具有空白区域的基板; 步骤6将步骤5所得的基板与步骤2所得的盖板精确对位,用粘结材料粘接基板和盖板形成有机发光二极管的封装结构。 The inorganic film were left; peeling step 226: Step 225 dipping the resulting substrate was peeled off, the photoresist overlying the inorganic film is removed to obtain physical gap column; Step 3 A sputtering process for producing an organic substrate on the anode of the light emitting diode; step 4 obtained in step 3 substrate and the vapor deposition mask alignment accuracy, the mask area deposition mask to the shape, size and position of the organic layer and the organic light emitting diode provided on the blank areas correspond cathode ; step 5 and the cathode are sequentially deposited, the deposition mask is removed after completion of the deposition, a substrate having a blank area of ​​the surface of the substrate in the organic layer obtained in step 4; step 6 the substrate obtained in step 5 and the cover obtained in step 2 precise alignment, organic light emitting diode package structure formed by the bonding material bonding the substrate and the cover plate.
  10. 10.一种权利要求2所述的有机发光二极管封装结构的制备方法,其特征在于:包括以下步骤: 步骤I将盖板通过UV清洗或等离子清洗,烘干备用; 步骤2对于材质为高分子绝缘材料的物理间隙柱的制备,包括分步骤211至214: 步骤211在盖板表面均匀涂布光敏感树脂,并安装掩模板,所述掩模板上的镂空区域与盖板上所设置物理间隙柱的大小、形状和位置一一对应; 步骤212曝光:用光束照射步骤211所得盖板,镂空区域的光敏感树脂受光照射发生固化,而被掩模板遮蔽的区域内的光敏感树脂未受光照射也不发生固化; 步骤213显影:将步骤212所得基板浸入显影溶液,被掩模板遮蔽的区域内的未固化光敏感树脂溶于显影液而被除去,固化的光敏感树脂形成物理间隙住; 步骤214对步骤213所得物理间隙柱进行烘烤使其进一步硬化; 对于材质为无机材料的物理间隙柱的制 The method of preparing the second organic light emitting diode package as claimed in claim 10. A structure, characterized in that: comprising the following steps: I cover plate by UV cleaning or plasma cleaning, drying standby; Step 2 The material is a polymer preparing an insulating material physical gap column, comprising sub-steps 211 to 214: in step 211 the cover surface of the light-sensitive resin is coated uniformly, and mounting the reticle, the cover plate is provided on the hollow region of the mask plate physical gap column size, shape and position correspond; exposure step 212: the resulting beam irradiation step with the cover 211, the light-sensitive resin hollow region irradiated with light is cured, while the light-sensitive resin is irradiated with light in the region of the mask were not masked not cured; a developing step 213: step 212 dipping the resulting substrate a developing solution, the uncured regions of the mask is shielded photosensitive resin soluble in a developer and removed, the light-sensitive resin cured to form a physical gap live; step step 214 pairs of physical gap 213 column obtained by baking further harden; column for a physical gap of the material made of an inorganic material ,包括分步骤221至226: 步骤221采用溅射镀膜法在阳极表面沉积无机膜; 步骤222在无机膜表面均匀涂布光刻胶并烘烤,然后安装掩模板;如果所涂光刻胶为负性光刻胶,则掩模板上的镂空区域与盖板上所设置物理间隙柱的位置、形状一一对应;如果所涂光刻胶为正性光刻胶,则掩模板上的遮蔽区域与盖板上所设置物理间隙柱的位置、形状对应; 步骤223曝光:光束经过掩模板照射至无机膜表面的光刻胶,对于负性光刻胶,镂空区域光刻胶受光照射发生固化,对于正性光刻胶,镂空区域光刻胶受光照射而发生分解; 步骤224显影:将步骤223所得基板浸入显影溶液,未固化或已分解的光刻胶溶解而被除去,剩余光刻胶则覆盖在无机膜上; 步骤225刻蚀:将步骤224所得基板浸入刻蚀液,被除去光刻胶区域内的无机薄膜没有保护被刻蚀掉,光刻胶覆盖区域的无机膜则 Comprising substeps 221-226: step 221 using sputter coating an inorganic film deposited on the surface of the anode; step 222 in the inorganic film photoresist is uniformly coated surface and baked, and then mounting the reticle; if the resist coating is negative photoresist, the mask plate and the hollow region of the upper cover plate of the physical gap is disposed column, shape correspondence; if the photoresist is a positive photoresist coating, the areas masked mask plate physical gap provided on the cover plate and column location corresponding to a shape; exposure step 223: after the photoresist mask is irradiated beam to the surface of the inorganic film, for a negative photoresist, the photoresist hollow region irradiated with light is cured, for a positive photoresist, and the hollow areas of the photoresist is decomposed by light irradiation; a developing step 224: step 223 the resultant substrate was immersed in a developing solution, the uncured photoresist is dissolved or decomposed and removed, the remaining photoresist covering the inorganic film; etching step 225: the etching solution immersing the substrate obtained in step 224, the inorganic thin film is removed in the area not protected by the photoresist is etched away, photoresist coverage area of ​​the inorganic film 被留下;步骤226剥离:将步骤225所得基板浸入剥离液,移除覆盖在无机膜上的光刻胶,得到物理间隙柱; 步骤3采用溅射镀膜工艺在基板上制备一层导电膜; 步骤4在导电膜表面均匀涂布正性光刻胶并烘烤,然后,将涂布正性光刻胶的基板与掩模板精确对位,所述掩膜板上的遮蔽区域与基板上所设置阳极的大小、形状和位置一一对应,所述掩膜板上的镂空区域与基板上除阳极以外的区域一一对应,还包括与有机发光二极管阳极、有机层和阴极上设置的空白区域的形状、大小和位置一一对应的区域; 步骤5曝光:用光束照射步骤4所得基板,被掩模板遮蔽的区域,所涂正性光刻胶不发生分解,镂空区域内的光刻胶则受光束照射发生分解; 步骤6显影:将步骤5所得基板浸入显影液中,发生分解反应的正性光刻胶溶于显影液中,未发生分解反应的光刻胶覆盖在导 Left; peeling step 226: Step 225 The resultant substrate was immersed in a stripping solution, inorganic removable cover film photoresist, to give a physical gap column; Step 3 using sputtering process preparing a conductive film on the substrate layer; step 4 was uniformly coated the surface of the conductive film and baking the positive photoresist, and then, the substrate is coated with the positive photoresist mask on the exact position of the shielding area of ​​the mask substrate plate with the an anode size, shape and position correspond, the hollow region of the mask plate and the substrate region other than the anode-one correspondence, the blank further comprising an anode region of organic light emitting diode, provided on the organic layer and the cathode correspondence of shape, size and position of the region; exposure step 5: step 4 with a light beam irradiating the resultant substrate, the mask region is shielded, the positive photoresist coating without decomposition, the photoresist within the hollow region decomposed by light irradiation; developing step 6: step 5 the resultant substrate was immersed in the developing solution, decomposition reaction occurs in the positive photoresist is dissolved in a developing solution, the photoresist decompose unreacted guide cover 电膜表面; 步骤7刻蚀:将步骤6所得基板浸入刻蚀液中,表面没有正性光刻胶保护的导电膜被刻蚀掉,表面有正性光刻胶保护的导电膜则被留下; 步骤8剥离:将步骤7所得基板浸入剥离液中,除去导电膜表面的正性光刻胶,剩余导电膜即为阳极; 步骤9将步骤8所得基板与蒸镀掩模板精确对位,蒸镀掩模板的遮蔽区域与有机发光二极管有机层和阴极上设置的空白区域的形状、大小和位置一一对应; 步骤10在步骤9所得基板表面依次蒸镀有机层和阴极,蒸镀完成后取下蒸镀掩模板,获得具有空白区域的基板; 步骤11将步骤10所得的基板与步骤2所得的盖板精确对位,用粘结材料粘接基板和盖板形成有机发光二极管的封装`结构。 Dielectric film surface; 7 etching steps: an etching solution immersing the substrate obtained in step 6, the conductive film surface is not protected by a positive photoresist is etched away, the surface conductive film positive photoresist were left protected under; release step 8: the substrate obtained in step 7 was immersed in the stripping solution, removing the positive photoresist surface of the conductive film, the conductive film remaining is the anode; step 8 step 9 the resultant substrate and deposition mask alignment accuracy, shielding area deposition mask one to one correspondence with the organic layer and the organic light emitting diode shape, size and position of the blank area is provided on the cathode; completion of step 9 step 10 the substrate surface resulting organic layer and the cathode are sequentially deposited, after evaporation the deposition mask is removed, a substrate having a blank area; step 11 the substrate 10 obtained in step 2 and step cover precise alignment obtained, organic light emitting diode package is formed with an adhesive material of the adhesive and the cover plate substrate ` structure.
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