CN103247508B - For detecting the analyzer of pollution of ion source - Google Patents
For detecting the analyzer of pollution of ion source Download PDFInfo
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- CN103247508B CN103247508B CN201210033028.6A CN201210033028A CN103247508B CN 103247508 B CN103247508 B CN 103247508B CN 201210033028 A CN201210033028 A CN 201210033028A CN 103247508 B CN103247508 B CN 103247508B
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Abstract
The present invention relates to a kind of analyzer for detecting pollution of ion source, comprise ion screening pipe, also comprise controller, the sidewall of described ion screening pipe is provided with some mutually isolated and graphite bar side by side, described controller is connected with each graphite bar, described each graphite bar receives single foreign ion, and described controller monitors foreign ion in each graphite bar constantly for detecting pollution of ion source.The present invention is provided with mutually isolated graphite bar side by side on ion screening pipe sidewall, because the ion motion radius of foreign ion is different, thus the diverse location on the ion screening pipe sidewall of analyzer can be dropped on, namely different graphite bar can receive different foreign ions, each graphite bar rear end connection control device, detects the electric current in each graphite bar, and whether monitoring foreign ion has exception, thus judge whether ion source has pollution or whether unstable, and then avoid large-scale contamination of products.
Description
Technical field
The present invention relates to semiconductor applications, particularly a kind of analyzer for detecting pollution of ion source.
Background technology
Ion implantation technique is a kind of material surface modifying new and high technology that development in recent years is got up, its general principle is: be that the ion beam incidence of tens to hundreds of kev magnitudes is in material with energy, the interaction of series of physical and chemistry will be there is in the atom in ion beam and material or molecule, incident ion is off-energy gradually, finally stop in the material, and cause material surface composition, stuctures and properties changes, thus optimizes material surface performance, or obtains new excellent properties.Due to without the need to carrying out in high temperature environments, therefore overall dimension and the surface smoothness of workpiece can not be changed, without the need to heat-treating and fine finishining after ion implantation, ion implanted layer is formed a new surface by the interaction of ion beam and body surface generation series of physical and chemistry, there is not spallation problems between it and matrix.
Current ion implantor is generally made up of following system: the extraction of ion source system, ion and accelerating system, quality analysis system, ion beam focusing and scanning system, target chamber system, vacuum system.The ion produced in an ion source, after extraction electrode is drawn, enters accelerating system.Ion accelerates by accelerating system, enters quality analysis system, after isolating the ion of needs, then line focus and scanning system, final ion arrives on the wafer of target chamber.In order to make ion implantation obtain best uniformity, whole system must keep vacuum, with the impact avoiding the neutralization of ion and foreign atom or ion pair to inject.In the use procedure of ion injection machine table, other a small amount of gas in reacting gas, may be mingled with, like this from ion source draw ion except need foreign ion except, also have other ions.So all ion beams are from ion source to wafer end, have to pass through the space in a screening magnetic field, namely analyzer, described analyzer comprises the graphite on ion screening pipe, ion screening pipe sidewall, the effect of the graphite on described ion screening pipe sidewall avoids ion to screen a large amount of unwanted ion in pipe to puncture ion screening pipe, on the same line, the port of export of ion screening pipe and vacuum chamber are on the same line for the arrival end of ion screening pipe and ion source.
In analyzer, ion beam current with the plane of vertical magnetic field in move in a vacuum with constant speed.From electromagnetic principles, now charged ion makes uniform circular motion by the impact of long-range navigation magnetic force, for the ion of different quality, the radius of its uniform circular motion is diverse, analyzer is exactly the principle different according to its moving radius of different ions, different ions is separated one by one, unwanted foreign ion is filtered out, only required Doped ions is picked out and send accelerator to and accelerate.Due to ionogenic pollution and instability, often have some foreign ions to be brought on wafer along with ion beam, especially metal ion, and pole is not easy to be found.The analyzer of prior art can not monitor ion source various foreign ion out and size thereof constantly, thus causes product quality to be subject to extreme influence.
Summary of the invention
The object of this invention is to provide a kind of analyzer for detecting pollution of ion source, to monitor ion source various foreign ion out and size thereof constantly, avoiding large-scale contamination of products.
Technical solution of the present invention is a kind of analyzer for detecting pollution of ion source, comprise ion screening pipe, also comprise controller, the sidewall of described ion screening pipe is provided with some mutually isolated and graphite bar side by side, described controller is connected with each graphite bar, described each graphite bar receives single foreign ion, and described controller monitors foreign ion in each graphite bar constantly for detecting pollution of ion source.
As preferably: described controller comprises the current sensing means arranged with each graphite bar one_to_one corresponding, and described current sensing means is for detecting the size of current of single foreign ion in each graphite bar.
As preferably: described current sensing means comprises operational amplifier and ammeter, described operational amplifier one end connects graphite bar, and the other end connects ammeter.
As preferably: described graphite bar is arranged on the sidewall of ion screening pipe by the holddown groove of insulation.
Compared with prior art, the present invention is provided with mutually isolated graphite bar side by side on ion screening pipe sidewall, because the ion motion radius of foreign ion is different, thus the diverse location on the ion screening pipe sidewall of analyzer can be dropped on, namely different graphite bar can receive different foreign ions, each graphite bar rear end connection control device, detect the electric current in each graphite bar, whether monitoring foreign ion has exception, thus judge whether ion source has pollution or whether unstable, and then avoid large-scale contamination of products.
Accompanying drawing explanation
Fig. 1 is that the present invention is for detecting the schematic diagram of the analyzer of pollution of ion source.
Fig. 2 is current sensing means of the present invention.
Embodiment
The present invention is further detailed in conjunction with the accompanying drawings below:
Set forth a lot of detail in the following description so that fully understand the present invention.But the present invention can be much different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public concrete enforcement.
Secondly, the present invention utilizes schematic diagram to be described in detail, when describing the embodiment of the present invention in detail; for ease of explanation; represent that the profile of device architecture can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, it should not limit the scope of protection of the invention at this.In addition, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.
Fig. 1 shows the present invention for detecting the schematic diagram of the analyzer of pollution of ion source.
Refer to shown in Fig. 1, in the present embodiment,
A kind of analyzer for detecting pollution of ion source, comprise ion screening pipe 1 and controller 13, the sidewall 11 of described ion screening pipe is provided with some mutually isolated and graphite bar 12 side by side, described controller 13 is connected with each graphite bar 12, described each graphite bar 12 receives single foreign ion, and described controller 13 monitors foreign ion in each graphite bar 12 constantly for detecting pollution of ion source.Described graphite bar 12 is arranged on the sidewall 11 of ion screening pipe 1 by the holddown groove (not shown) of insulation.
As shown in Figure 2, described controller 13 comprises the current sensing means corresponding with graphite bar 12.Described current sensing means comprises operational amplifier 131 and ammeter 132, and described operational amplifier 131 one end connects graphite bar 12, and the other end connects ammeter 132.
The width of described graphite bar 12 can not meet single foreign ion and is infused in single graphite bar 12 by too wide need, interval between graphite bar 12 can set according to the ion motion radius of various foreign ion, the surface of described graphite bar 12 needs smooth, is beneficial to and detects ion current size.
According to electromagnetic principles, ion is stressed as follows in analyzer: the long-range navigation magnetic force F1=qvB of ion, and wherein q is ionic charge, and v is ion velocity, and B is magnetic field;
The kinetic energy E=1/2mv of ion
2=qU, wherein m is mass of ion, and v is ion velocity, and q is ionic charge, and U is institute's making alive;
The centripetal force F2=ma=mv of ion
2/ r
c, wherein m is mass of ion, and v is ion velocity, r
cit is ion motion radius.
Wherein in analyzer, the long-range navigation magnetic force of ion provides the centripetal force of ion, i.e. F1=F2, can be shifted out onto the moving radius of ion by above three formula
Doped ions of the same race needs different energy under different technology conditions, the size that the size of magnetic field B can only be regulated to meet Doped ions radius r can be found out according in the formula of ion motion radius, namely the evolution of Doped ions energy V when ion implantation follows the value (being denoted as M) divided by magnetic field B, and M could meet Doped ions in any case and arrive on wafer.Such as, existing Doped ions is boron, phosphorus, arsenic, and because the mass of ion of boron, phosphorus, arsenic three kinds of Doped ions is different, when same board, described M value is different.After Doped ions is determined, M value is also just determined, at this moment the ion motion radius of other various foreign ion is correlated with the mass of ion of foreign ion, the Doped ions radius r of the analyzer for detecting pollution of ion source of such as prior art is 1.87 meters, various foreign ion, mass of ion is different, its ion motion radius is also different, as shown in table 1, for the ion motion radius of each foreign ion in the ion implantation of different Doped ions in analyzer, the relevant position of corresponding different ion motion radiuses on the ion screening pipe sidewall 11 of analyzer arranges mutually isolated each graphite bar.
Table 1
Use procedure of the present invention is as follows: in the ion implantation process of certain Doped ions; the current value of each graphite bar 12 on ion screening pipe sidewall is monitored constantly by controller; when monitoring electric current; corresponding table 1 judges in ion implantation process, which kind of impurity has exception; exception monitoring then; shutdown is safeguarded, thus avoids large-scale contamination of products.The moving radius of some foreign ion is very similar with the Doped ions radius of required injection, and the Doped ions that can inject other in maintenance process is monitored and judged whether that foreign ion is injected on wafer.
The present invention is provided with mutually isolated graphite bar 12 side by side on ion screening pipe sidewall 11, because the ion motion radius of foreign ion is different, thus the diverse location on the ion screening pipe sidewall 11 of analyzer can be dropped on, namely different graphite bar 12 can receive different foreign ions, each graphite bar 12 rear end connection control device 13, detect the electric current in each graphite bar 12, whether monitoring foreign ion has exception, thus judge whether ion source has pollution or whether unstable, and then avoid large-scale contamination of products.The foregoing is only preferred embodiment of the present invention, all equalizations done according to the claims in the present invention scope change and modify, and all should belong to the covering scope of the claims in the present invention.
Claims (4)
1. one kind for detecting the analyzer of pollution of ion source, comprise ion screening pipe, it is characterized in that: also comprise controller, the sidewall of described ion screening pipe is provided with some mutually isolated and graphite bar side by side, described controller is connected with each graphite bar, described each graphite bar receives single foreign ion, described controller monitors foreign ion in each graphite bar constantly for detecting pollution of ion source, wherein, the interval between each graphite bar sets according to the ion motion radius of various foreign ion.
2. the analyzer for detecting pollution of ion source according to claim 1, it is characterized in that: described controller comprises the current sensing means arranged with each graphite bar one_to_one corresponding, and described current sensing means is for detecting the size of current of single foreign ion in each graphite bar.
3. the analyzer for detecting pollution of ion source according to claim 2, is characterized in that: described current sensing means comprises operational amplifier and ammeter, and described operational amplifier one end connects graphite bar, and the other end connects ammeter.
4. the analyzer for detecting pollution of ion source according to claim 1, is characterized in that: described graphite bar is arranged on the sidewall of ion screening pipe by the holddown groove of insulation.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210033028.6A CN103247508B (en) | 2012-02-14 | 2012-02-14 | For detecting the analyzer of pollution of ion source |
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| CN201210033028.6A CN103247508B (en) | 2012-02-14 | 2012-02-14 | For detecting the analyzer of pollution of ion source |
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| CN103247508A CN103247508A (en) | 2013-08-14 |
| CN103247508B true CN103247508B (en) | 2015-11-25 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101233597A (en) * | 2005-06-03 | 2008-07-30 | 艾克塞利斯技术公司 | Charged beam dump and particle attractor |
| CN102067270A (en) * | 2008-06-25 | 2011-05-18 | 艾克塞利斯科技公司 | Low-inertia multi-axis multi-directional mechanically scanned ion implantation system |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW527618B (en) * | 2000-11-01 | 2003-04-11 | Axcelis Tech Inc | Mechanism for containment of neutron radiation in ion implanter beamline |
| DE10329383B4 (en) * | 2003-06-30 | 2006-07-27 | Advanced Micro Devices, Inc., Sunnyvale | Ion beam detector for ion implantation systems, Faraday containers therefor and methods for controlling the properties of an ion beam using the ion beam detector |
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- 2012-02-14 CN CN201210033028.6A patent/CN103247508B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101233597A (en) * | 2005-06-03 | 2008-07-30 | 艾克塞利斯技术公司 | Charged beam dump and particle attractor |
| CN102067270A (en) * | 2008-06-25 | 2011-05-18 | 艾克塞利斯科技公司 | Low-inertia multi-axis multi-directional mechanically scanned ion implantation system |
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