CN103199192A - Manufacturing method of magnetic sensing device - Google Patents
Manufacturing method of magnetic sensing device Download PDFInfo
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- CN103199192A CN103199192A CN2013100667684A CN201310066768A CN103199192A CN 103199192 A CN103199192 A CN 103199192A CN 2013100667684 A CN2013100667684 A CN 2013100667684A CN 201310066768 A CN201310066768 A CN 201310066768A CN 103199192 A CN103199192 A CN 103199192A
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 18
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 24
- 239000010410 layer Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 17
- 238000004544 sputter deposition Methods 0.000 claims description 16
- 238000002360 preparation method Methods 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 239000003595 mist Substances 0.000 claims description 3
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 239000000696 magnetic material Substances 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 11
- 238000013461 design Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 230000000704 physical effect Effects 0.000 description 6
- 206010063401 primary progressive multiple sclerosis Diseases 0.000 description 6
- 229920006395 saturated elastomer Polymers 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005298 paramagnetic effect Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a manufacturing method of a magnetic sensing device, working temperature of the magnetic sensing device manufactured through the method is within the range (of) from 2K to 500K (-271DEG C to 227DEG C), and the resistivity of the magnetic sensing device is from 250 micro-ohm*centimeter to 3500micro-ohm*centimeter. Under the working temperature from 2K to 500K, linearity degree of a sample is less than two per thousand, linearity degree of a magnetic field is maintained between -7kOe to 7kOe, and the magnetic sensing device has the advantages of being stable in performance, wide in detection range and the like. The magnetic sensing device solves the problems that the traditional semiconductor magnetic sensing device is large in size, narrow in working temperature range, bad in conductivity and the like, and belongs to a magnetic material which is economical, practical and capable of keeping linearity degree in a wide magnetic field range.
Description
Technical field
The present invention relates to a kind of manufacture method of magnetic sensor device.
Background technology
Magnetic sensor device is noncontacting switch, the position-sensing switch in brushless electric machine, gear rotational speed detection, process control; the safety device ABS of automobile; car engine ignition regularly; be used widely in fields such as current/voltage transducer, magnetic sensor device is by active layer, electrode and protect their encapsulation to form.Be characterized in contactless sensing, the reliability height, in order to detect current/voltage, there is not the loss of insertion, and realize input and output signal isolation fully, do not have overload and damage etc., therefore in fields such as the accurate Drawing of the research of magnetic material and magnetic measurement apparatus, earth magnetism field pattern, geological prospecting, navigation, Aeronautics and Astronautics very important purposes is arranged.
At present, the active layer material in the magnetic sensor device generally all adopts semi-conducting materials such as silicon, indium antimonide, indium arsenide, and size of component is bigger, in the submillimeter magnitude.Because characteristic parameters such as the carrier concentration of semi-conducting material, mobility vary with temperature very greatly, it is very big that its resistivity is varied with temperature, and causes working temperature to be restricted again.If in wideer temperature range, work, must be used in combination the element of multiple model, cause its size to strengthen, the element cost is increased greatly.For overcoming big, the shortcomings such as cost is high, complicated process of preparation of semiconductor active layer material volume, must seek that a kind of working temperature is wide, volume is little, prepare simple substitution material.
There is anomalous effect in the magnetic membrane material, and this class material has higher temperature stability, preparation is simple, can overcome that the semi-conducting material operating temperature range is narrow, the shortcoming of complicated process of preparation, be that the size of the magnetic sensor device that makes of active layer will be down to sub-micrometer scale with this class magnetic thin film.
But also there are some problems during as the active layer of magnetic sensor device with magnetic thin film.On the one hand, in order to reduce the components and parts size as far as possible, must reduce the thickness of active layer.For general magnetic membrane material, when thickness is reduced to certain critical value when following, material might enter super paramagnetic attitude, and this moment, the magnetization reduced greatly, and resistivity also reduces thereupon greatly, thereby the magnetic sensing element was lost efficacy; On the other hand, bigger as the general resistivity of magnetic thin film of active layer material, therefore poorly conductive needs higher input voltage, and this has increased power loss in actual applications, has reduced the useful life of element.As seen, must search out a kind of novel magnetic active layer material, make it be the magnetic coefficient that still keeps higher under the nano level situation, less resistivity and have good performance at thickness.
Summary of the invention
In order to solve big, the problems such as operating temperature range is narrow, poorly conductive of traditional semiconductor magnetic sensor spare volume, seek a kind of practical, magnetic sensor device magnetic material that can in wideer magnetic field range, keep the linearity more economically, the invention provides a kind of manufacture method of magnetic sensor device, the magnetic sensor device working temperature that makes according to this method at 2K in 500K (namely-271 ℃ to 227 ℃) scope, resistivity at 250 μ Ω cm in 3500 μ Ω cm scopes.In the operating temperature range of 500K, the linearity of sample is less than 2/1000ths at 2K, the magnetic field linearity remains on-7kOe in the 7kOe scope, have stable performance, advantage such as detection range is wide.
The preparation method of magnetic sensor device disclosed by the invention comprises the steps:
1) use the method for photoetching and mask at " ten " font pattern of substrate formation for deposit film.The foursquare length of side of pattern center is at 0.3～1.0 micron, and the length of ledge is 0.2 micron on foursquare four limits, center;
2) adopt general superhigh vacuum magnetron sputtering film-plating machine, carrying on the back end vacuum degree less than 5.0 * 10
-5During Pa, with highly purified Ar gas and O
2The mist of gas feeds vacuum chamber, and wherein the Ar throughput is 10sccm, O
2Throughput is 2.7sccm;
3) treat that vacuum degree drops to below the 1.0Pa, the open degree of ultra high vacuum slide valve is set at 20%; On the iron target, be set at the direct current power of 475W, on the platinum target, be set at the direct current power of 50W, pre-sputter 5 minutes;
4) open the baffle plate of iron target, platinum target and substrate, substrate at the uniform velocity rotates with 20 rev/mins speed, and the control sputtering time was 0.5～20 minute film forming;
5) by the magnetic force rotating shaft sample is delivered to secondary vacuum chamber, take out sample, remove photoresist; Method square Fe on substrate with photoetching and mask
2.95La
0.05O
3The outside on four limits of film forms in order to deposit the rectangular patterns of four electrodes.Each electrode pattern respectively with square Fe
2.95La
0.05O
3There is 0.15 micron lap on four limits of film.Sample is sent into vacuum chamber, prepare the titanium layer of 50 nanometer thickness and the gold layer of 500 nanometer thickness continuously and form electrode, titanium target and gold target all adopt direct current sputtering;
6) by the magnetic force rotating shaft sample is delivered to secondary vacuum chamber, take out sample, remove photoresist; Method square Fe on substrate with photoetching and mask
2.95La
0.05O
3The top of film forms in order to deposit the square pattern of protective layer, and the foursquare length of side is at 0.5～1.2 micron, with Fe
2.95La
0.05O
3Film covers fully.Sample is sent into vacuum chamber prepare silicon dioxide layer of protection.The titanium dioxide silicon target adopts radio frequency sputtering, and the setting sputtering power is 200W, and sputtering time is 10 minutes.
Embodiment
In order to make those skilled in the art more be expressly understood the present invention, describe its technical scheme in detail below by embodiment.
Below will the present invention is further illustrated by specific embodiment.
Embodiment 1
The sccm of unit refers to " standard cubic centimeter per minute ", i.e. standard state ml/min (1ml=1cm in the literary composition
3), standard state is 0 ℃, 1atm.
1, the preparation of active layer pattern.Form " ten " font pattern for deposit film with the method for mask at quartz substrate.The foursquare length of side of this pattern center is at 1.0 microns, and the length of ledge is 0.2 micron on foursquare four limits, center;
2, feed argon gas and oxygen under the room temperature.Adopt the DPS-III type superhigh vacuum magnetron sputtering film-plating machine (computer control software that carries) at Shenyang section of Chinese Academy of Sciences instrument center, carrying on the back end vacuum degree less than 5.0 * 10
-5During Pa, with highly purified Ar gas and O
2The mist of gas feeds vacuum chamber.Wherein the Ar throughput is 10sccm, O
2Throughput is 2.7sccm.When treating that vacuum degree drops to the 1.0Pa left and right sides, the computer control software that utilizes equipment to carry is set at 20% with the open degree of ultra high vacuum slide valve;
3, pre-sputter.Being the direct current power that is set at 475W on 99.99% the iron target to purity, is the direct current power that is set at 50W on 99.99% the platinum target to purity, pre-sputter 5 minutes;
4, spatter film forming.Open the baffle plate of quartz substrate, substrate at the uniform velocity rotates with 20 rev/mins speed, and the control sputtering time was at 10 minutes; Namely obtain certain thickness nano-crystalline Fe
2.95La
0.05O
3Magnetic material.
5, preparation electrode.By the magnetic force rotating shaft sample is delivered to secondary vacuum chamber, take out sample, remove photoresist; Method square Fe on substrate with mask
2.95La
0.05O
3The outside on four limits of film forms in order to deposit the rectangular patterns of four electrodes.Each electrode pattern respectively with square Fe
2.95La
0.05O
3There is 0.15 micron lap on four limits of film.Sample is sent into vacuum chamber, prepare the titanium layer of 50 nanometer thickness and the gold layer of 500 nanometer thickness continuously and form electrode, titanium target and gold target all adopt direct current sputtering;
6, preparation protective layer.By the magnetic force rotating shaft sample is delivered to secondary vacuum chamber, take out sample, remove photoresist; Method square Fe on substrate with mask
2.95La
0.05O
3The top form in order to deposit the square pattern of protective layer, the foursquare length of side is at 0.5～1.2 micron, with Fe
2.95La
0.05O
3Cover fully.Sample is sent into vacuum chamber prepare silicon dioxide layer of protection.The titanium dioxide silicon target adopts radio frequency sputtering, utilizes computer-controlled program, and the setting sputtering power is 200W, and sputtering time is 10 minutes, obtains magnetic sensor device.
Adopting the Dektak3 surface topographic apparatus fo to measure the active layer film thickness is 200nm, shows that through X-ray diffraction analysis and X-ray photoelectron spectroscopic analysis the main component of film is Fe
2.95La
0.05O
3
The physical property measuring instrument PPMS-9 that utilizes U.S. Quantum Design company to produce, the resistivity to magnetic sensor device in the temperature range of 2K～500K is measured.The result shows that the resistivity of sample is in 950 μ Ω cm～1150 μ Ω cm scopes, and size and excursion are all less than common semiconductor and FeNi-SiO
2, Ni-SiO
2, Co-SiO
2Deng the particle film material.
The physical property measuring instrument PPMS-9 that utilizes U.S. Quantum Design company to produce, the saturated magnetic sensing resistor rate to magnetic sensor device in the temperature range of 2K～500K is measured.Saturated magnetic sensing resistor rate has reflected the stability of magnetic sensor device performance with variation of temperature.Saturated magnetic sensing resistor rate is more little with variation of temperature, shows that the temperature stability of magnetic sensor device is more strong, and operating temperature range is more wide.The result shows that in the temperature range of 2K～500K, the value of saturated magnetic sensing resistor rate has changed 12%, and under similarity condition, Ni-SiO
2The magnetic sensing resistor rate of particle film material has changed 80%.
The physical property measuring instrument PPMS-9 that utilizes U.S. Quantum Design company to produce, in the temperature range of 2K～500K, measures the linearity of magnetic sensor device in the magnetic field range of 7kOe at-7kOe.The linearity of transducer is characterizing device to the certainty of measurement of different magnetic field.-7kOe is in the magnetic field range of 7kOe, and this magnetic sensor device magnetic sensing resistor rate and the magnetic field that record under each temperature all keep good linear relationship.Be the linearity of quantificational expression measurement curve, adopt the method for linear fit, draw the maximum relative error under the different temperatures.In the temperature range of 2K～500K, the linearity of sample is less than 2/100000ths.
Embodiment 2
1, the preparation of active layer pattern is with embodiment 1 step 1;
2, feed argon gas and oxygen under the room temperature, with embodiment 1 step 2;
3, pre-sputter is with embodiment 1 step 3;
4, spatter film forming.Open the baffle plate of quartz substrate, substrate at the uniform velocity rotates with 20 rev/mins speed, and the control sputtering time was respectively 0.5 minute, 2 minutes and 20 minutes, made sample I, II and III;
5, the preparation method of electrode is with embodiment 1 step 5;
6, the preparation method of protective layer is with embodiment 1 step 6;
Adopt the Dektak3 surface topographic apparatus fo to measure the thickness of active layer, the results are shown in Table 1.
The physical property measuring instrument PPMS-9 that utilizes U.S. Quantum Design company to produce measures the resistivity of magnetic sensor device I, II and III in the temperature range of 2K～500K, and the results are shown in Table 1.
The physical property measuring instrument PPMS-9 that utilizes U.S. Quantum Design company to produce, saturated magnetic sensing resistor rate to magnetic sensor device in the temperature range of 2K～500K is measured, and the saturated magnetic sensing resistor rate excursion of three magnetic sensor devices is listed in the table 1 respectively.
The physical property measuring instrument PPMS-9 that utilizes U.S. Quantum Design company to produce, in the temperature range of 2K～500K, measures the linearity of magnetic sensor device in the magnetic field range of 7kOe at-7kOe.The magnetic field range of the variation of the linearity of three magnetic sensor devices and the maintenance linearity is listed in the table 1 respectively.
The performance parameter of table 1 magnetic sensor device I, II and III.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (1)
1. the preparation method of a magnetic sensor device is characterized in that, this method comprises the steps:
1) use the method for photoetching and mask at " ten " font pattern of substrate formation for deposit film.The foursquare length of side of pattern center is at 0.3～1.0 micron, and the length of ledge is 0.2 micron on foursquare four limits, center;
2) adopt general superhigh vacuum magnetron sputtering film-plating machine, carrying on the back end vacuum degree less than 5.0 * 10
-5During Pa, with highly purified Ar gas and O
2The mist of gas feeds vacuum chamber, and wherein the Ar throughput is 10sccm, O
2Throughput is 2.7sccm;
3) treat that vacuum degree drops to below the 1.0Pa, the open degree of ultra high vacuum slide valve is set at 20%; On the iron target, be set at the direct current power of 475W, on the platinum target, be set at the direct current power of 50W, pre-sputter 5 minutes;
4) open the baffle plate of iron target, platinum target and substrate, substrate at the uniform velocity rotates with 20 rev/mins speed, and the control sputtering time was 0.5～20 minute film forming;
5) by the magnetic force rotating shaft sample is delivered to secondary vacuum chamber, take out sample, remove photoresist; Method square Fe on substrate with photoetching and mask
2.95La
0.05O
3The outside on four limits of film forms in order to deposit the rectangular patterns of four electrodes.Each electrode pattern respectively with square Fe
2.95La
0.05O
3There is 0.15 micron lap on four limits of film.Sample is sent into vacuum chamber, prepare the titanium layer of 50 nanometer thickness and the gold layer of 500 nanometer thickness continuously and form electrode, titanium target and gold target all adopt direct current sputtering;
6) by the magnetic force rotating shaft sample is delivered to secondary vacuum chamber, take out sample, remove photoresist; Method square Fe on substrate with photoetching and mask
2.95La
0.05O
3The top of film forms in order to deposit the square pattern of protective layer, and the foursquare length of side is at 0.5～1.2 micron, with Fe
2.95La
0.05O
3Film covers fully.Sample is sent into vacuum chamber prepare silicon dioxide layer of protection.The titanium dioxide silicon target adopts radio frequency sputtering, and the setting sputtering power is 200W, and sputtering time is 10 minutes.
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|---|---|---|---|
| CN2013100667684A CN103199192A (en) | 2013-02-28 | 2013-02-28 | Manufacturing method of magnetic sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100667684A CN103199192A (en) | 2013-02-28 | 2013-02-28 | Manufacturing method of magnetic sensing device |
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| Publication Number | Publication Date |
|---|---|
| CN103199192A true CN103199192A (en) | 2013-07-10 |
Family
ID=48721626
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|---|---|---|---|
| CN2013100667684A Pending CN103199192A (en) | 2013-02-28 | 2013-02-28 | Manufacturing method of magnetic sensing device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113267620A (en) * | 2020-01-29 | 2021-08-17 | Tdk株式会社 | Magnetic sensor, magnetic detection device, and magnetic detection system |
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2013
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113267620A (en) * | 2020-01-29 | 2021-08-17 | Tdk株式会社 | Magnetic sensor, magnetic detection device, and magnetic detection system |
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Application publication date: 20130710 |