CN103187496B - 发光器件 - Google Patents

发光器件 Download PDF

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Publication number
CN103187496B
CN103187496B CN201210593041.7A CN201210593041A CN103187496B CN 103187496 B CN103187496 B CN 103187496B CN 201210593041 A CN201210593041 A CN 201210593041A CN 103187496 B CN103187496 B CN 103187496B
Authority
CN
China
Prior art keywords
semiconductor layer
nitride semiconductor
layer
light emitting
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201210593041.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN103187496A (zh
Inventor
丁钟弼
黄净铉
金钟国
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN103187496A publication Critical patent/CN103187496A/zh
Application granted granted Critical
Publication of CN103187496B publication Critical patent/CN103187496B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • A—HUMAN NECESSITIES
    • A62—LIFE-SAVING; FIRE-FIGHTING
    • A62B—DEVICES, APPARATUS OR METHODS FOR LIFE-SAVING
    • A62B5/00—Other devices for rescuing from fire
    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04F—FINISHING WORK ON BUILDINGS, e.g. STAIRS, FLOORS
    • E04F19/00—Other details of constructional parts for finishing work on buildings
    • E04F19/08—Built-in cupboards; Masks of niches; Covers of holes enabling access to installations
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06C—LADDERS
    • E06C9/00—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes
    • E06C9/02—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes rigidly mounted
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06C—LADDERS
    • E06C9/00—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes
    • E06C9/06—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes movably mounted
    • E06C9/08—Ladders characterised by being permanently attached to fixed structures, e.g. fire escapes movably mounted with rigid longitudinal members
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Mechanical Engineering (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Business, Economics & Management (AREA)
  • Emergency Management (AREA)
  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)
CN201210593041.7A 2012-01-03 2012-12-31 发光器件 Expired - Fee Related CN103187496B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20120000622A KR20130079873A (ko) 2012-01-03 2012-01-03 발광소자 및 이를 포함하는 조명시스템
KR10-2012-0000622 2012-01-03

Publications (2)

Publication Number Publication Date
CN103187496A CN103187496A (zh) 2013-07-03
CN103187496B true CN103187496B (zh) 2017-05-31

Family

ID=47428533

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210593041.7A Expired - Fee Related CN103187496B (zh) 2012-01-03 2012-12-31 发光器件

Country Status (6)

Country Link
US (1) US9018652B2 (https=)
EP (1) EP2613368B1 (https=)
JP (1) JP6087142B2 (https=)
KR (1) KR20130079873A (https=)
CN (1) CN103187496B (https=)
TW (1) TWI596798B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI758603B (zh) * 2014-07-03 2022-03-21 晶元光電股份有限公司 光電元件及其製造方法
CN105224120B (zh) * 2014-07-03 2018-07-31 宸鸿科技(厦门)有限公司 基板结构
TWI759602B (zh) * 2019-05-24 2022-04-01 晶元光電股份有限公司 半導體元件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1933201A (zh) * 1998-03-12 2007-03-21 日亚化学工业株式会社 氮化物半导体元件
CN101840983A (zh) * 2009-03-16 2010-09-22 Lg伊诺特有限公司 发光器件、发光器件封装及包括发光器件封装的照明系统
CN102110753A (zh) * 2009-12-28 2011-06-29 Lg伊诺特有限公司 发光器件、发光器件封装以及照明系统

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JPH09116192A (ja) * 1995-10-16 1997-05-02 Toshiba Corp 発光ダイオード
JP4356555B2 (ja) * 1998-03-12 2009-11-04 日亜化学工業株式会社 窒化物半導体素子
KR100589621B1 (ko) * 1998-03-12 2006-06-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자
JP3804335B2 (ja) * 1998-11-26 2006-08-02 ソニー株式会社 半導体レーザ
WO2002084829A1 (en) * 2001-04-11 2002-10-24 Cielo Communications, Inc. Long wavelength vertical cavity surface emitting laser
US7692182B2 (en) * 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
TW493287B (en) * 2001-05-30 2002-07-01 Epistar Corp Light emitting diode structure with non-conductive substrate
JP2003168822A (ja) * 2001-11-30 2003-06-13 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法
JP4254373B2 (ja) * 2003-06-24 2009-04-15 日亜化学工業株式会社 窒化物半導体素子
US7751455B2 (en) * 2004-12-14 2010-07-06 Palo Alto Research Center Incorporated Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
JP2007096116A (ja) * 2005-09-29 2007-04-12 Toyoda Gosei Co Ltd 発光素子
JP2007134388A (ja) * 2005-11-08 2007-05-31 Sharp Corp 窒化物系半導体素子とその製造方法
JP2007220973A (ja) * 2006-02-17 2007-08-30 Showa Denko Kk 半導体発光素子及びその製造方法、並びにランプ
US20070228385A1 (en) * 2006-04-03 2007-10-04 General Electric Company Edge-emitting light emitting diodes and methods of making the same
TW200812113A (en) * 2006-05-23 2008-03-01 Alps Electric Co Ltd Semiconductor light emitting element and method for manufacturing the same
EP1883141B1 (de) * 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
US8158990B2 (en) * 2006-10-05 2012-04-17 Mitsubishi Chemical Corporation Light emitting device using GaN LED chip
US20080277682A1 (en) * 2007-03-29 2008-11-13 The Regents Of The University Of California Dual surface-roughened n-face high-brightness led
JP2009038239A (ja) * 2007-08-02 2009-02-19 Toshiba Corp 光半導体装置
JP5164641B2 (ja) * 2008-04-02 2013-03-21 Ｄｏｗａエレクトロニクス株式会社 電流狭窄型半導体発光素子の製造方法
JP5994420B2 (ja) * 2012-06-21 2016-09-21 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
US20140097442A1 (en) * 2012-10-09 2014-04-10 Industrial Technology Research Institute Nitride semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1933201A (zh) * 1998-03-12 2007-03-21 日亚化学工业株式会社 氮化物半导体元件
CN101840983A (zh) * 2009-03-16 2010-09-22 Lg伊诺特有限公司 发光器件、发光器件封装及包括发光器件封装的照明系统
CN102110753A (zh) * 2009-12-28 2011-06-29 Lg伊诺特有限公司 发光器件、发光器件封装以及照明系统

Also Published As

Publication number Publication date
TW201340386A (zh) 2013-10-01
EP2613368A3 (en) 2016-02-17
US20130168711A1 (en) 2013-07-04
KR20130079873A (ko) 2013-07-11
JP6087142B2 (ja) 2017-03-01
JP2013140983A (ja) 2013-07-18
TWI596798B (zh) 2017-08-21
EP2613368B1 (en) 2020-05-06
CN103187496A (zh) 2013-07-03
EP2613368A2 (en) 2013-07-10
US9018652B2 (en) 2015-04-28

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Legal Events

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20210817

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

TR01 Transfer of patent right
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

CP03 Change of name, title or address
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170531

CF01 Termination of patent right due to non-payment of annual fee