CN103187366B - Form the method for tft array substrate - Google Patents
Form the method for tft array substrate Download PDFInfo
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- CN103187366B CN103187366B CN201110453581.0A CN201110453581A CN103187366B CN 103187366 B CN103187366 B CN 103187366B CN 201110453581 A CN201110453581 A CN 201110453581A CN 103187366 B CN103187366 B CN 103187366B
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Abstract
Form a method for tft array substrate, comprising: substrate is provided, form TFT switch, data wire, scan line, public electrode and passivation layer on the substrate; Described passivation layer forms organic film; Utilize the mask plate with through hole location hole figure and groove pattern expose described organic film and develop, form through hole location hole and multiple groove; Etch the organic film bottom described through hole location hole and passivation layer formation through hole, described through hole exposes the drain electrode of TFT switch; Form pixel electrode and reflecting electrode successively, cover described graphical after organic film, the sidewall of groove and bottom, the sidewall of through hole and bottom.The technical program can improve productive rate, cost-saving.
Description
Technical field
The present invention relates to display field, particularly relate to the method for the tft array substrate formed for reflective or half-reflection and half-transmission formula LCD.
Background technology
At present, reflective liquid-crystal display, transflective LCD, owing to having good outdoor display effect and low-power consumption, therefore more and more receive an acclaim.
Fig. 1 is the floor map of the dot structure of the reflective liquid-crystal display of prior art, with reference to figure 1, the dot structure of reflective liquid-crystal display of the prior art comprises: grid 11, source electrode 12, drain electrode 13, the scan line 14 be electrically connected with grid 11, the data wire 15 be electrically connected with source electrode 12, is positioned at the public electrode 21 of pixel region, pixel electrode 22 and reflecting electrode 23, wherein, reflecting electrode 23 has multiple protruding 24, and pixel electrode 22 is electrically connected with drain electrode 13 by through hole 25.
Fig. 2 ~ Fig. 5 is for tft array substrate formation process is along the generalized section in the A-A direction shown in Fig. 1, and Fig. 2 ~ Fig. 5 only shows a pixel.Formation process for the tft array substrate of reflected displaying device comprises:
In conjunction with reference to figure 1 and Fig. 2, substrate 10 is provided, forms metal level on the substrate 10, carry out graphically to this metal level, form grid 11, scan line 14 and public electrode 21, cuing open in fig. 2 shows that position only demonstrates public electrode 21, and in Fig. 2, the shape of public electrode 21 only plays signal effect.Form dielectric layer 31, cover gate 11, scan line 14, public electrode 21 and substrate 10; On dielectric layer 31, form amorphous silicon layer afterwards, source region (not shown) is graphically formed to amorphous silicon layer; Then form metal level, be coated with source region and dielectric layer 31; Then, graphically form source electrode 12, drain electrode 13 and data wire 15 to metal level, cuing open in fig. 2 shows that position only demonstrates drain electrode 13, and in Fig. 2, the shape of drain electrode 13 is only signal effect; Form passivation layer 32 afterwards, cover source electrode 12, drain electrode 13, data wire 15, dielectric layer 31, active area, and opening 27 is graphically formed to passivation layer 32, expose drain electrode 13.Wherein, forming grid 11, scan line 14 and public electrode 21 is first masking process, and being formed with source region is second masking process, and formation source electrode 12, drain electrode 13, data wire 15 are the 3rd road masking process, and forming opening 27 is the 4th road masking process.
With reference to figure 3, form organic film 33, cover passivation layer 32 and fill opening 27 and cover drain electrode 13.
With reference to figure 4, utilize mask plate to carry out the first exposure to organic film 33, this first exposure is for forming protruding 24 in organic film 33, and wherein during the first exposure, the sweep speed of light is 85mm/sec (milli m/min); Recycle another road mask plate and carry out the second exposure to organic film 33, this second exposure is for forming through hole 25 in organic film 33, and during the second exposure, the sweep speed of light is 20mm/sec; Afterwards, develop, form groove 26 and through hole 25 at organic film 33 to the organic film 33 having carried out the first exposure and the second exposure, the organic film between adjacent grooves 26 is protruding 24.Carry out the first exposure and use the 5th road masking process, carry out the second exposure and used the 6th road masking process.
With reference to figure 5, then form pixel electrode layer, and pixel electrode 22 is graphically formed to pixel electrode layer; Then, form reflector, and reflecting electrode 23 is graphically formed to reflector.Formation pixel electrode 22 and reflecting electrode 23 are respectively the 7th road and the 8th road masking process.
The production technology of the reflected displaying device of prior art, in order to form protruding 24 and through hole 25, needs to double expose to organic film 33, once develop, and compared with the display of other patterns, double exposure expends the longer production time; And the sweep speed of light forming the second exposure of through hole is that the exposure sweep speed of 20mm/sec, 20mm/sec is too slow, and had a strong impact on production efficiency, productive rate is only 1/6 of other mode display.
In order to improve productive rate, some factories attempt use half tone mask plate (halftonemask), form projection and through hole, only can utilize single exposure and a developing process with a mask plate.Compared with above-described eight road masking process, utilize half tone mask plate to not only save one mask plate, and only use single exposure process.But in order to form via hole image, exposure sweep speed still must remain on 20mm/sec, and the exposure sweep speed of 20mm/sec is too slow.Meanwhile, half tone technique is unstable, and the cost manufacturing half tone mask plate is high.Therefore half tone mask plate is utilized can not to save cost, improve productive rate.
And there is above problem too in the production technology in the half-reflection and half-transmission formula display reflects district of prior art.
Summary of the invention
The problem that the present invention solves is prior art for the formation method of the tft array substrate of reflective or half-reflection and half-transmission formula display, and productive rate is low, cost is high.
For solving the problem, the invention provides a kind of method forming tft array substrate, comprising:
Step 1: provide substrate, forms TFT switch, data wire, scan line, public electrode and passivation layer on the substrate;
Step 2: form organic film on described passivation layer;
Step 3: utilize the mask plate with through hole location hole figure and groove pattern expose described organic film and develop, form through hole location hole and multiple groove;
Step 4: etch the organic film bottom described through hole location hole and passivation layer formation through hole, described through hole exposes the drain electrode of TFT switch;
Step 5: form pixel electrode and reflecting electrode successively, cover described graphical after organic film, the sidewall of groove and bottom, the sidewall of through hole and bottom.
Optionally, described tft array substrate is the array base palte of reflection LCD.
Optionally, in step 4, the organic film in described etching through hole location hole portion and passivation layer form through hole and comprise:
Form patterned photoresist layer, cover described graphical after the upper surface of organic film, the sidewall of groove and bottom, expose sidewall and the bottom of through hole location hole;
With described patterned photoresist layer for mask etching graphical after organic film and passivation layer form through hole;
Remove patterned photoresist layer.
Optionally, in step 4, the organic film in described etching through hole location hole portion and passivation layer form through hole and comprise:
Organic film after graphical described in direct etching and passivation layer, until the drain electrode that the bottom-exposed of described through hole location hole goes out in TFT switch forms through hole.
Optionally, in step 3, the height of described through hole location hole is greater than the height of groove.
The formation method of the tft array substrate for reflected displaying device of the present invention, after forming passivation layer, does not carry out patterned technique to passivation layer, saves one mask.After forming organic film over the passivation layer, utilize the mask plate shade with through hole location hole figure and groove pattern on organic film, described organic film is exposed; Organic film after exposure is developed in organic film and forms through hole location hole and multiple groove; Then the organic film bottom etching through hole location hole and passivation layer form the through hole exposing drain electrode.Afterwards, then form reflecting electrode and pixel electrode.Owing to utilizing the mask plate simultaneously with via hole image and protruding figure, and utilize single exposure in organic film, form groove, through hole location hole, therefore one masking process can be saved, and, owing to not needing to form through hole when developing, but define through hole by etching, so the speed of exposure scanning does not need to reduce yet, can 85mm/sec be remained on, can productive rate be improved accordingly, reduce costs.In addition, owing to utilizing the mask plate simultaneously with via hole image and protruding figure, a mask plate can be saved like this, also just can reduce costs accordingly.
In one embodiment, the method forming through hole and groove is: form patterned photoresist layer, covers described organic film, the sidewall of groove and bottom, exposes the bottom of through hole location hole; With described patterned photoresist layer for organic film, passivation layer described in mask etching, form through hole; Remove patterned photoresist layer.This embodiment has saved one masking process relative to prior art.
In another embodiment, after forming groove and through hole location hole, direct dry etching organic film and passivation layer, form through hole, and owing to not needing to use masking process, saved twice masking process relative to prior art, cost reduces further.
The present invention also provides the another kind of method forming tft array substrate, comprising:
Step 1: provide substrate, forms TFT switch, data wire, scan line, public electrode and passivation layer on the substrate;
Step 2: form organic film on described passivation layer;
Step 3: utilize the mask plate with groove pattern, through hole location hole figure and regional transmission opening location hole figure expose described organic film and develop, form multiple groove, through hole location hole and regional transmission opening location hole;
Step 4: etch the organic film bottom described through hole location hole and described regional transmission opening location hole and passivation layer, form through hole and regional transmission opening respectively, described through hole exposes the drain electrode of TFT switch;
Step 5: formed pixel electrode cover described graphical after organic film, groove, through hole and regional transmission opening; The pixel electrode of reflector space forms reflecting electrode.
Optionally, described tft array substrate is the array base palte of half-reflection and half-transmission type liquid crystal display.
Optionally, in step 4, the organic film bottom described etching described through hole location hole and described regional transmission opening location hole and passivation layer comprise:
Organic film after graphical described in direct etching and passivation layer, form through hole and regional transmission opening.
Optionally, in step 3, the height of described through hole location hole is greater than the height of described groove.Optionally, in step 4, the organic film bottom described etching through hole location hole and regional transmission opening location hole and passivation layer, form through hole and regional transmission opening comprises respectively:
Form patterned photoresist layer, cover described graphical after the upper surface of organic film, the sidewall of groove and bottom, expose bottom the sidewall of through hole location hole and bottom, regional transmission opening location hole and sidewall;
With described patterned photoresist layer for mask etching graphical after organic film and passivation layer form through hole and regional transmission opening;
Remove patterned photoresist layer.
Compared with prior art, the present invention has the following advantages:
The formation method of the tft array substrate for half-reflection and half-transmission formula display of the present invention, after forming passivation layer, does not carry out patterned technique to passivation layer, saves one mask.After forming organic film over the passivation layer, utilize the mask plate shade with through hole location hole figure, regional transmission opening location hole figure and groove pattern on organic film, described organic film is exposed; Organic film after exposure is developed in organic film and forms through hole location hole, regional transmission opening location hole and multiple groove; Then the organic film bottom etching through hole location hole and bottom regional transmission opening location hole and passivation layer form the through hole and the regional transmission opening that expose drain electrode.Afterwards, then form reflecting electrode and pixel electrode.Owing to utilizing the mask plate simultaneously with through hole location hole figure, groove pattern and regional transmission opening location hole figure, and utilize single exposure in organic film, form through hole location hole, groove, regional transmission opening location hole, therefore one masking process can be saved, and, owing to not needing to form through hole, regional transmission opening when developing, but define through hole, regional transmission opening by etching, so the speed of exposure scanning does not need to reduce yet, 85mm/sec can be remained on, can productive rate be improved accordingly, reduce costs.In addition, owing to utilizing the mask plate simultaneously with through hole location hole figure, regional transmission opening location hole figure and groove pattern, can mask plate be saved like this, also just can reduce costs accordingly.
In one embodiment, forming the method for through hole, regional transmission opening and groove is: form patterned photoresist layer, covers described organic film, the sidewall of groove and bottom, exposes the bottom of the bottom of through hole location hole, regional transmission opening location hole; With described patterned photoresist layer for organic film, passivation layer described in mask etching, form through hole, regional transmission opening; Remove patterned photoresist layer.This embodiment has saved masking process relative to prior art.
In another embodiment, after forming groove, regional transmission opening location hole and through hole location hole, direct dry etching organic film and passivation layer form through hole and regional transmission opening, owing to not needing to use masking process during etching, further save masking process, cost reduces further.
Accompanying drawing explanation
Fig. 1 is the floor map of the dot structure of the reflective liquid-crystal display of prior art;
The formation process of the tft array substrate for reflected displaying device that Fig. 2 ~ Fig. 5 is prior art is along the generalized section in the A-A direction shown in Fig. 1;
Fig. 6 is the floor map of the dot structure of the tft array substrate of the reflection LCD of the specific embodiment of the invention;
Fig. 7 is the schematic flow sheet of the formation tft array substrate method of the specific embodiment of the invention;
Fig. 8 ~ Figure 14 is the cross-sectional view of formation tft array substrate method along the A-A direction shown in Fig. 6 of the present invention first specific embodiment;
Figure 15 ~ Figure 19 is the cross-sectional view of formation tft array substrate method along the A-A direction shown in Fig. 6 of the present invention second specific embodiment;
Figure 20 is the floor map of the dot structure of the tft array substrate of the half-reflection and half-transmission type liquid crystal display of the specific embodiment of the invention;
Figure 21 and Figure 22 is the cross-sectional view along the B-B direction shown in Figure 20.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here to implement with multiple, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention.Therefore the present invention is not by the restriction of following public embodiment.
Fig. 6 is the floor map of the dot structure of the tft array substrate of the reflective liquid-crystal display of the specific embodiment of the invention, with reference to figure 6, the dot structure of the specific embodiment of the invention comprises: grid 41, source electrode 42, drain electrode 43, the scan line 44 be electrically connected with grid 41, the data wire 45 be electrically connected with source electrode 42, be positioned at the public electrode 51 of pixel region, pixel electrode 52 and reflecting electrode 53, wherein, reflecting electrode 53 has multiple protruding 54, can realize the diffuse reflection to light in projection 54, and pixel electrode 52 is electrically connected with drain electrode 43 by through hole 55.This dot structure is same as the prior art, in order to clearly demonstrate the present invention, again describes this dot structure.
Fig. 7 is the schematic flow sheet of the tft array substrate method of the formation reflective liquid-crystal display of the specific embodiment of the invention, and with reference to figure 7, the formation tft array substrate method of the specific embodiment of the invention comprises:
Step S1, provides substrate, forms TFT switch, data wire, scan line, public electrode and passivation layer on the substrate;
Step S2, described passivation layer forms organic film;
Step S3, utilizes the mask plate with through hole location hole figure and groove pattern expose described organic film and develop, forms through hole location hole and multiple groove;
Step S4, etch the organic film bottom described through hole location hole and passivation layer formation through hole, described through hole exposes the drain electrode of TFT switch;
Step S5, forms pixel electrode and reflecting electrode successively, cover described graphical after organic film, the sidewall of groove and bottom, the sidewall of through hole and bottom.
First embodiment
Fig. 8 ~ Figure 14 is the cross-sectional view along the A-A direction shown in Fig. 6 of the formation tft array substrate method of the present invention first specific embodiment, below in conjunction with the formation tft array substrate method describing the present invention first specific embodiment with reference to figure 6, Fig. 7 and Fig. 8 ~ Figure 14 figure in detail.
Perform step S1, in conjunction with reference to figure 6, Fig. 7 and Fig. 8, provide substrate 40, be formed with TFT switch, data wire 45, scan line 44, public electrode 51 and passivation layer 62 on the substrate.
In the present invention, described substrate 40 glass substrate, but be not limited to glass substrate, other substrates that can be known to the skilled person.
Concrete, described substrate 40 is formed TFT switch, data wire 45, scan line 44, public electrode 51 and passivation layer 62 comprise: on described substrate 40, form the first conductive layer, wherein, the material of the first conductive layer is selected from the combination in any of gold, silver, copper, aluminium, titanium, chromium, molybdenum, cadmium, nickel, cobalt one of them or they; Utilize photoetching, etching technics graphically described first conductive layer, form grid 41, the scan line 44 be electrically connected with grid 41, the public electrode 51 of TFT switch, at the profile position of Fig. 7, only illustrate public electrode 51, and the shape of public electrode 51 is only signal effect.
Form gate medium 61, cover described substrate 40, the grid 41 of TFT switch, scan line 44 and public electrode 51, the material of this gate dielectric layer 61 can select silica, silicon oxynitride etc. to well known to a person skilled in the art material.
Then on gate medium 61, be formed with active layer, and etched the active area of island and TFT switch, the material of described active layer can be polysilicon or amorphous silicon.
Form the second conductive layer, cover described active area, gate dielectric layer 61, utilize photoetching, etching technics graphically described second conductive layer form source electrode 42, drain electrode 43, the data wire 45 that is electrically connected with described source electrode 42, wherein, the material of the second conductive layer is selected from the combination in any of gold, silver, copper, aluminium, titanium, chromium, molybdenum, cadmium, nickel, cobalt one of them or they.
Afterwards, form passivation layer 62, the source electrode 42 of covering gate dielectric layer 61, TFT switch, drain electrode 43, active area, data wire 45, the material of passivation layer 62 is silicon nitride, silica or their combination, but be not limited to these materials, the other materials that can be known to the skilled person.
Perform step S2, in conjunction with reference to figure 6, Fig. 7 and Fig. 9, described passivation layer 62 forms organic film 63, that is, organic film 63 is paved with whole tft array substrate.The material that the material of organic film 63 is known to the skilled person, formation method can spin coating, spraying etc.The effect of described organic film 63 mainly forms projection 54 and enhances product performance, and such as organic film can prevent upper and lower two conductive layers crosstalk etc.; The thickness of organic film 63 is determined according to actual needs, and in this first embodiment, the thickness of organic film 63 can be selected between 0.5 μm to 3 μm, and the thickness of this organic film 63 is not limited to 0.5 μm to 3 μm certainly, can determine according to actual needs.
Perform step S3, in conjunction with reference to figure 6, Fig. 7 and Figure 10, utilize the mask plate with through hole location hole figure and groove pattern expose described organic film 63 and develop, form through hole location hole 65 and multiple groove 66.
Organic film between described multiple groove 66 is protruding 54, and namely described multiple groove 66 is used to the projection 54 forming organic film; The position of the through hole in organic film and passivation layer oriented by described through hole location hole 65, in step s3, do not need to form through hole, and only defines the through hole location hole 65 of definition lead to the hole site.
In the present invention, the size of the multiple grooves formed in organic film can be different, the size of through hole location hole 65 can than the size of groove 66 greatly, also can be less than the size of groove 66 or equal with it.In first embodiment, can select the size d1 of groove 66 between 1 μm ~ 3.5 μm; The size d2 of through hole location hole is between 7 μm ~ 15 μm.Concrete, can by limiting the groove pattern on mask plate and through hole location hole figure, to reach the needs that the groove, the size of through hole location hole and the degree of depth that are formed in organic film all arrive actual production.
In first embodiment, to organic film exposure sweep speed between 70 ~ 100mm/sec, the concrete sweep speed of 85mm/sec of the prior art that can utilize in the present embodiment exposes organic film 63, form through hole location hole 65 and multiple groove 66 simultaneously, the time of technique is shortened like this compared to prior art, accordingly, improve productive rate.In the present invention, 70 ~ 100mm/sec is not limited to the sweep speed of organic film exposure, can adjusts the sweep speed that organic film exposes according to the difference of exposure light source adopted and the demand of actual process.Perform step S4, in conjunction with reference to figure 6, Fig. 7 and Figure 11, Figure 12, Figure 13, etch organic film 63 bottom described through hole location hole and passivation layer 62 forms through hole 55, described through hole 55 exposes the drain electrode 43 of TFT switch.
Concrete, in this first embodiment, etch organic film 63 bottom described through hole location hole 65 and passivation layer 62 and form through hole 55 and comprise:
With reference to Figure 11, form photoresist layer 67, the organic film 63 after cover graphics, the sidewall of the upper surface of the organic film 63 namely after cover graphics, the sidewall of multiple groove 66 and bottom, through hole location hole 65 and bottom;
Then, with reference to Figure 12, utilize the mask plate with via hole image to carry out exposure imaging to photoresist layer 67, form patterned photoresist layer 67, cover described graphical after the upper surface of organic film 63, the sidewall of multiple groove 66 and bottom, expose sidewall and the bottom of through hole location hole 65.
With reference to Figure 13, with described patterned photoresist layer 67 be mask etching graphical after organic film 63, passivation layer 62, formation through hole 55, described through hole 55 exposes the drain electrode 43 of TFT switch.Wherein, lithographic method is dry etching, and the gas that uses in dry etching needs to determine according to the material of organic film 63 and passivation layer 62 and thickness; After forming through hole 55, cineration technics is utilized to remove patterned photoresist layer 67.
In first embodiment, owing to form groove 66, through hole location hole 65 in organic film after, utilize patterned photoresist layer 67 to carry out etching as mask to organic film and form through hole 55, therefore formed in the process of through hole 55 at etching organic film 63, can not etched recesses.In addition, the effect of through hole 55 is only played the pixel electrode formed in subsequent technique and the effect be electrically connected that drains, so the aperture of through hole 55 can greatly, can be little, therefore in this embodiment through hole location hole 65 size can than the size of groove 66 greatly, also can be less than the size of groove 66 or equal with it.
Perform step S5, combine with reference to figure 6, Fig. 7 and Figure 14, successively formation pixel electrode 52 and reflecting electrode 53, cover described graphically after organic film 63, the sidewall of multiple groove 66 and bottom, the sidewall of through hole 55 and bottom.
Concrete formation method is: form pixel electrode layer, cover described graphical after organic film 63, the sidewall of multiple groove 66 and bottom, the sidewall of through hole 55 and bottom, then, the graphical described pixel electrode layer of lithographic etch process is utilized to form pixel electrode 52; Then, form reflector, utilize the graphical described reflector of lithographic etch process to form reflecting electrode 53.
First embodiment of the invention forms the method for the tft array substrate being used for reflected displaying device, after forming passivation layer, does not carry out patterned technique, save one mask plate to passivation layer.After forming organic film over the passivation layer, the mask plate with through hole location hole figure and multiple groove pattern is utilized to carry out first time exposure to described organic film; Organic film after exposure is developed in organic film and forms multiple groove and through hole location hole, and the height of the multiple groove of aspect ratio of described through hole location hole is high; Re-use the organic film below the mask plate etching through hole location hole with via hole image and passivation layer afterwards, make through hole expose the drain electrode of TFT switch.Therefore one masking process can be saved, and, owing to not needing to form through hole when developing, but only define through hole location hole, by defining through hole bottom etching through hole location hole, so the speed of exposure scanning does not need to reduce yet, 85mm/sec can be remained on, also just can improve productive rate accordingly, reduce costs.In addition, save one mask plate and corresponding masking process compared to prior art, reduce cost.
Second embodiment
Figure 15 ~ Figure 19 is the cross-sectional view along the A-A direction shown in Fig. 6 of the formation tft array substrate method of the present invention second specific embodiment, below in conjunction with the formation tft array substrate method describing the present invention second specific embodiment with reference to figure 6, Fig. 7, Figure 15 ~ Figure 19 in detail.
Perform step S1, in conjunction with reference to figure 6, Fig. 7 and Figure 15, provide substrate 40, described substrate 40 is formed TFT switch, data wire 45, scan line 44 and public electrode 51.
This step S1 is identical with the step S1 of the first embodiment, does not repeat at this.
Perform step S2, in conjunction with reference to figure 6, Fig. 7 and Figure 16, described passivation layer 62 forms organic film 632.This step S2 is substantially identical with the method for the step S2 of the first embodiment.Wherein, the thickness of organic film needs to determine according to the actual requirements.
Perform step S3, in conjunction with reference to figure 6, Fig. 7 and Figure 17, utilize the mask plate with through hole location hole figure and groove pattern expose described organic film 632 and develop, form multiple groove 66 and through hole location hole 65, the height of the aspect ratio groove 66 of described through hole location hole 65 is large.Organic film between described multiple groove 66 is protruding 54, and namely described multiple groove 66 is used to be formed organic film projection 54; Described through hole location hole 65 defines the position of the through hole in organic film and passivation layer.
In conjunction with reference to Figure 18, due in step S4 afterwards, directly etching formation through hole 55 is carried out to organic film 632, organic film during organic film therefore bottom etching through hole location hole also bottom etched recesses.When forming through hole 55 to prevent etching organic film, the bottom of the groove 66 above TFT switch is also worn quarter exposes source electrode, drain electrode, in this second embodiment, preferably, the height of through hole location hole 65 is greater than the height of groove 66, can select the size d1 of groove 66 between 1 μm ~ 3.5 μm, the size d2 of through hole location hole is between 7 μm ~ 15 μm.
In this embodiment, the height being not limited to hole location hole 65 is greater than the height of groove 66, the bottom of groove 66 can be avoided by other means to be worn quarter and expose source electrode, drain electrode, such as, can not form groove 66 above TFT switch region.
Perform step S4, in conjunction with reference to figure 6, Fig. 7 and Figure 18, etch organic film 632 bottom described through hole location hole 65 and passivation layer 62 forms through hole 55, described through hole 55 exposes the drain electrode 43 of TFT switch.
Concrete, in a second embodiment, organic film 632 bottom etching through hole location hole 65 and passivation layer 62 form through hole 55 and comprise: the organic film 632 after graphical described in direct etching and passivation layer 62, until the drain electrode 43 that the bottom-exposed of described through hole location hole 65 goes out in TFT switch forms through hole 55.That is, in this second embodiment, do not need to utilize patterned photoresist layer to define the position of through hole 55, but entirety etching is carried out to the organic film 632 after graphical, etch as dry etching, like this, the bottom of groove, the bottom of through hole location hole are all to downward-extension, when the bottom-exposed of through hole location hole goes out drain electrode 43, when namely through hole 55 is formed, stop etching.
Because the material of organic film 632 is organic material, photoresist layer 67 in a first embodiment is also organic material, so etch it as mask with organic film 632, or as mask, organic film 632 is etched with graphical rear photoresist layer 67, finally can reach identical effect, again because the thickness of organic film 632 is in this etch step, integral thinned, when therefore forming organic film 632 in step S2 in the present embodiment, need the thickness considering organic film, according to actual conditions such as etching speed, the material etc. of etching gas or organic film, determine the thickness of organic film, generally, compared to the organic film thickness in the first embodiment, the thickness range that organic film in a second embodiment increases is generally between 5% ~ 30%, but the thickness range that the invention is not restricted to organic film increases is 5% ~ 30%, the thickness of organic film 632 needs to determine according to actual conditions.
Perform step S5, with reference to figure 6, Fig. 7 and Figure 19, form pixel electrode 52 and reflecting electrode 53 successively, cover described graphically after organic film 632, the sidewall of multiple groove 66 and bottom, the sidewall of through hole 55 and bottom.
This step S5 is also identical with the step S5 of the first embodiment, does not repeat at this.
In a second embodiment, after forming multiple groove and through hole location hole, direct dry etching organic film and passivation layer, until the drain electrode that the bottom-exposed of described through hole location hole goes out in TFT switch forms through hole, during due to etching through hole location hole, do not need to use masking process, saved one masking process and corresponding technique thereof relative to the first embodiment, saved twice masking process relative to prior art, cost reduces further.
Figure 20 is the floor map of the dot structure of the tft array substrate of the half-reflection and half-transmission type liquid crystal display of the specific embodiment of the invention, the dot structure of the tft array substrate of half-reflection and half-transmission type liquid crystal display of the present invention comprises: grid 110, source electrode 120, drain electrode 130, the scan line 140 be electrically connected with grid 110, the data wire 150 be electrically connected with source electrode 120, be positioned at the public electrode 510 of pixel region, be positioned at the pixel electrode 520 of regional transmission opening 100 and echo area, be positioned at the reflecting electrode 102 of reflector space, and described reflecting electrode 102 is positioned on the described pixel electrode 520 of echo area, described reflector space is around regional transmission opening 100.Wherein, reflecting electrode 102 has multiple protruding 54, can realize the diffuse reflection to light in projection 54, and pixel electrode 520 is electrically connected with drain electrode 130 by through hole 55.This dot structure is substantially identical with the dot structure of the half-reflection and half-transmission type liquid crystal display of prior art.
The tft array substrate method of formation half-reflection and half-transmission type liquid crystal display provided by the invention comprises:
Step S1, provides substrate, forms TFT switch, data wire, scan line, public electrode and passivation layer on the substrate;
Step S2, described passivation layer forms organic film;
Step S3, utilizes the mask plate with groove pattern, through hole location hole figure and regional transmission opening location hole figure expose described organic film and develop, forms multiple groove, through hole location hole and regional transmission opening location hole;
Step S4, etches the organic film bottom described through hole location hole and described regional transmission opening location hole and passivation layer, and form through hole and regional transmission opening respectively, described through hole exposes the drain electrode of TFT switch;
Step S5, formed pixel electrode cover described graphical after organic film, groove, through hole and regional transmission opening; The pixel electrode of reflector space forms reflecting electrode.Wherein, reflector space is around regional transmission opening.
3rd embodiment
Figure 20 is the floor map of the dot structure of the tft array substrate of the half-reflection and half-transmission type liquid crystal display of the specific embodiment of the invention, Figure 21 and Figure 22 is the cross-sectional view along the B-B direction shown in Figure 20, the tft array substrate that this 3rd specific embodiment provides is the array base palte of half-reflection and half-transmission type liquid crystal display, illustrates the forming step of the array base palte of the half-reflection and half-transmission type liquid crystal display of the 3rd embodiment below in conjunction with accompanying drawing.
Perform step S1, substrate 40 is provided, described substrate 40 is formed TFT switch, data wire 150, scan line 140, public electrode 510 and passivation layer 62.This step S1 is substantially identical with the step S1 of the first embodiment, does not repeat at this.
Perform step S2, described passivation layer is formed organic film 633.
This step S2 is identical with the method for the step S2 of the first embodiment.Optionally, the thickness of organic film 633 is different with organic film 63 thickness in the first embodiment.Can form projection 54 as long as organic film in a first embodiment 63 thickness meets and prevent upper and lower two conductive layers crosstalk, thickness range is comparatively large, between 0.5 μm to 3 μm; But in this 3rd embodiment, organic film 633 also has the effect forming dual-box thick structure, and namely can form reflector space above organic film 633 in follow-up structure, the thickness of described reflector space is about the half of thickness of liquid crystal box.In the prior art, the thickness of liquid crystal box of half-reflection and half-transmission type liquid crystal display does not have 3.5 μm ~ 4.5 μm not etc., the thickness that described organic film 633 can be set as required be 1.75 μm ~ 2.25 μm not etc.Certainly, the data herein enumerated are only example, and in actual process, the thickness of organic film 633 is not limited to these data, can adjust according to the demand of actual process.
Perform step S3, utilize the mask plate with groove pattern, through hole location hole figure and regional transmission opening location hole figure expose described organic film 633 and develop, form multiple groove, through hole location hole and regional transmission opening location hole.
This step S3, compared with the step S3 of the first embodiment, in order to form regional transmission opening, adds the formation of regional transmission opening location hole.
In the present invention, the size of the multiple grooves formed in organic film can be different, and the size relationship of groove, through hole location hole and regional transmission opening location hole three is not particularly limited, and all can determine according to the actual requirements.In this embodiment, can select the size of groove between 1 μm ~ 3.5 μm, the size of through hole location hole is between 7 μm ~ 15 μm, regional transmission opening location hole figure is of a size of 5% ~ 75% of whole Pixel Dimensions, can determine the size of regional transmission opening location hole according to different pixels size.Concrete, can by limiting the groove pattern on mask plate, through hole location hole figure, regional transmission opening location hole figure, the needs of actual production are all arrived with the size of the groove making to be formed in organic film, through hole location hole, regional transmission opening location hole and the degree of depth.
In this step S3, same sweep speed is utilized to expose organic film 633, the sweep speed of exposure is between 70 ~ 100mm/sec, the concrete sweep speed of 85mm/sec of the prior art that can utilize in the present embodiment exposes organic film 633, the time of technique is shortened like this compared to prior art, accordingly, improve productive rate.In the present invention, 70 ~ 100mm/sec is not limited to the sweep speed that organic film 633 exposes, can adjusts the sweep speed that organic film exposes according to the difference of exposure light source adopted and the demand of actual process.
Perform step S4, etch the organic film 633 bottom described through hole location hole and described regional transmission opening location hole and passivation layer 62, form through hole 55 and regional transmission opening 100 respectively, described through hole 55 exposes the drain electrode 130 of TFT switch.
Particularly, the technique of this step S4 is as follows:
Form photoresist layer, the organic film 633 after cover graphics, the upper surface of the organic film 633 namely after cover graphics, the sidewall of multiple groove 66 and bottom, the sidewall of through hole location hole and the sidewall of bottom and regional transmission opening location hole and bottom;
Then, the mask plate with via hole image and regional transmission opening figure is utilized to carry out exposure imaging to photoresist layer, form patterned photoresist layer, cover described graphical after the upper surface of organic film 633, the sidewall of multiple groove 66 and bottom, expose sidewall and the bottom of through hole location hole and regional transmission opening location hole;
Then, with described patterned photoresist layer for mask etching graphical after organic film 633, passivation layer 62, form through hole 55 and regional transmission opening 100, wherein said through hole 55 exposes the drain electrode 43 of TFT switch.Wherein, lithographic method is dry etching, and the gas that uses in dry etching needs to determine according to the material of organic film 633 and passivation layer 62 and thickness; After forming through hole 55 and regional transmission opening 100, cineration technics is utilized to remove patterned photoresist layer.
Perform step S5: formed pixel electrode 510 cover described graphical after organic film 633, groove 66, through hole 55 and regional transmission opening 100, the pixel electrode 510 of reflector space forms reflecting electrode 102.Wherein, reflector space is around regional transmission opening 100.The material of described pixel electrode 510 is transparent conductive material, as tin indium oxide.
In 3rd embodiment, owing to form groove, through hole location hole, regional transmission opening location hole in organic film after, utilize patterned photoresist layer to carry out etching as mask to organic film and form through hole and regional transmission opening, therefore formed in the process of through hole, regional transmission opening at etching organic film, can not etched recesses.In addition, the effect of through hole is only played the pixel electrode formed in subsequent technique and the effect be electrically connected that drains, thus the aperture of through hole can greatly, can be little; And, because organic film is transparent material and its lower floor does not have conductive layer, therefore the etching depth of regional transmission opening can not impact TFT substrate, thus the aperture of regional transmission opening can greatly, can be little, the degree of depth and the size of regional transmission opening location hole need be determined according to actual process.The array base palte of half-reflection and half-transmission type liquid crystal display provided by the invention and formation method, compared to the prior art, save mask plate and corresponding technique thereof, processing procedure simplified, provides cost savings; And the speed of exposure scanning does not need to reduce yet, and can remain on 85mm/sec, just can improve productive rate accordingly yet.
4th embodiment
The formation tft array substrate of the present invention the 4th specific embodiment is the array base palte of half-reflection and half-transmission type liquid crystal display.In this 4th specific embodiment, the method forming the array base palte of described half-reflection and half-transmission type liquid crystal display is:
Perform step S1, substrate is provided, form TFT switch, data wire, scan line, public electrode and passivation layer on the substrate.This step S1 described is substantially identical with the step S1 of the 3rd embodiment, introduces no longer in detail herein.
Perform step S2, described passivation layer forms organic film.This step S1 described is substantially identical with the step S1 of the 3rd embodiment.Wherein, the thickness of organic film needs to determine according to the actual requirements.Under normal circumstances, organic film is compared with the organic film in the 3rd embodiment, and thickness wants large 5% ~ 30%, concrete, and between 1.84 μm ~ 3 μm, reason following steps can be explained in detail.
Perform step S3, utilize the mask plate with groove pattern, through hole location hole figure and regional transmission opening location hole figure expose described organic film and develop, form multiple groove, through hole location hole and regional transmission opening location hole.In this embodiment, preferably, the height of described regional transmission opening location hole is greater than the height of described through hole location hole.
Due in step S4 afterwards, directly etching is carried out to organic film and form through hole, regional transmission opening, organic film during organic film therefore bottom etching through hole location hole, bottom regional transmission opening location hole also bottom etched recesses.When forming through hole, regional transmission opening to prevent etching organic film, the bottom of the groove above TFT switch is also worn quarter exposes source electrode, drain electrode, and in the 4th embodiment, preferably, the height of described through hole location hole is greater than the height of described groove.
Because organic film is transparent material and its lower floor does not have conductive layer, therefore the etching depth of regional transmission opening can not impact TFT substrate, regional transmission opening can be carved wears until etch into the passivation layer of lower floor, also residual organic film can be also had for regional transmission open bottom, therefore the height of regional transmission opening location hole does not have concrete restriction, determines according to actual process.
In this embodiment, the height being not limited to through hole location hole is greater than the height of groove, the bottom of groove can be avoided by other means to be worn quarter and expose source electrode, drain electrode, such as, can not form groove above TFT switch region.Perform step S4, etch the organic film bottom described through hole location hole and described regional transmission opening location hole and passivation layer, form through hole and regional transmission opening respectively, described through hole exposes the drain electrode of TFT switch.
Concrete, in the fourth embodiment, organic film bottom described through hole location hole and described regional transmission opening location hole is etched and passivation layer forms through hole and regional transmission opening comprises: the organic film after graphical described in direct etching and passivation layer, until the drain electrode gone out in TFT switch of the bottom-exposed of described through hole location hole forms through hole and forms regional transmission opening in step S4.That is, in the 4th embodiment, do not need to utilize the photoresist layer definition through hole of mask plate patterns and the position of regional transmission opening, but entirety etching is carried out to the organic film after graphical, etching is dry etching, like this, compared to the 3rd embodiment, this the 4th embodiment can save one mask plate, reduces costs.
In the step S4 of the present embodiment, the thickness of organic film is in this etch step, integral thinned, when therefore forming organic film in step S2 in the present embodiment, need the thickness considering organic film, according to the material etc. of actual conditions such as etching speed, etching gas or organic film, determine the thickness of organic film.Under normal circumstances, compared to the organic film thickness in the 3rd embodiment, the thickness range that organic film in the fourth embodiment increases is generally between 5% ~ 30%.But the thickness range that the invention is not restricted to organic film increases is 5% ~ 30%, the thickness of organic film needs to determine according to actual conditions.
Step S5, formed pixel electrode cover described graphical after organic film, groove, through hole and regional transmission opening; The pixel electrode of reflector space forms reflecting electrode, and described reflector space is arranged around regional transmission opening.
In 4th embodiment, after forming groove, regional transmission opening location hole and through hole location hole, direct dry etching organic film and passivation layer form through hole and regional transmission opening, owing to not needing to use masking process during etching, further save masking process relative to the 3rd embodiment, cost reduces further.
It should be noted that, be discontinuously arranged in the diagram protrusions of the specific embodiment of the invention, but projection in this specific embodiment of the invention can continuous distribution, also can be discontinuously arranged, can design according to the needs of reflection.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection range of technical solution of the present invention.
Claims (2)
1. form a method for tft array substrate, it is characterized in that, comprising:
Step 1: provide substrate, forms TFT switch, data wire, scan line, public electrode and passivation layer on the substrate;
Step 2: form organic film on described passivation layer;
Step 3: utilize the mask plate with through hole location hole figure and groove pattern expose described organic film and develop, form through hole location hole and multiple groove; The sweep speed exposed described organic film is 70 ~ 100mm/sec; The size of described multiple groove is different, and the size d1 of described multiple groove is between 1 μm ~ 3.5 μm;
Step 4: etch the organic film bottom described through hole location hole and passivation layer formation through hole, described through hole exposes the drain electrode of TFT switch;
Step 5: form pixel electrode and reflecting electrode successively, cover described graphical after organic film, the sidewall of groove and bottom, the sidewall of through hole and bottom;
Described tft array substrate is the array base palte of reflection LCD;
Wherein, in step 4, the organic film bottom described etching through hole location hole and passivation layer form through hole and comprise:
Form patterned photoresist layer, cover described graphical after the upper surface of organic film, the sidewall of groove and bottom, expose sidewall and the bottom of through hole location hole;
With described patterned photoresist layer for mask etching graphical after organic film and passivation layer form through hole;
Remove patterned photoresist layer;
Or,
In step 3, the height of described through hole location hole is greater than the height of groove;
In step 4, the organic film bottom described etching through hole location hole and passivation layer form through hole and comprise:
Organic film after graphical described in direct etching and passivation layer, until the drain electrode that the bottom-exposed of described through hole location hole goes out in TFT switch forms through hole.
2. form a method for tft array substrate, it is characterized in that, comprising:
Step 1: provide substrate, forms TFT switch, data wire, scan line, public electrode and passivation layer on the substrate;
Step 2: form organic film on described passivation layer;
Step 3: utilize the mask plate with groove pattern, through hole location hole figure and regional transmission opening location hole figure expose described organic film and develop, form multiple groove, through hole location hole and regional transmission opening location hole; The sweep speed of described exposure is 70 ~ 100mm/sec; Wherein, the size of described multiple groove is different, and the size d1 of described multiple groove is between 1 μm ~ 3.5 μm; The height of described regional transmission opening location hole is greater than the height of described through hole location hole;
Step 4: etch the organic film bottom described through hole location hole and described regional transmission opening location hole and passivation layer, form through hole and regional transmission opening respectively, described through hole exposes the drain electrode of TFT switch; Wherein, regional transmission opening is carved and wears until etch into the passivation layer of lower floor, or regional transmission open bottom also has residual organic film;
Step 5: formed pixel electrode cover described graphical after organic film, groove, through hole and regional transmission opening; The pixel electrode of reflector space forms reflecting electrode;
Described tft array substrate is the array base palte of half-reflection and half-transmission type liquid crystal display;
Wherein, in step 3, the height of described through hole location hole is greater than the height of described groove;
In step 4, the organic film bottom described etching described through hole location hole and described regional transmission opening location hole and passivation layer comprise:
Organic film after graphical described in direct etching and passivation layer, form through hole and regional transmission opening;
Or,
In step 4, the organic film bottom described etching through hole location hole and regional transmission opening location hole and passivation layer, form through hole and regional transmission opening comprises respectively:
Form patterned photoresist layer, cover the described upper surface of patterned organic film, the sidewall of groove and bottom, expose bottom the sidewall of through hole location hole and bottom, regional transmission opening location hole and sidewall;
With described patterned photoresist layer for mask etching graphical after organic film and passivation layer form through hole and regional transmission opening;
Remove patterned photoresist layer.
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| CN106058079B (en) * | 2016-08-18 | 2019-06-04 | Tcl集团股份有限公司 | A kind of pixel bank and preparation method thereof, light emitting diode |
| CN114879394B (en) * | 2022-04-29 | 2024-04-09 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of display panel and display panel |
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| CN1988163A (en) * | 2005-12-19 | 2007-06-27 | 三星电子株式会社 | Array substrate, method of manufacturing the same and display panel having the same |
| US7692740B2 (en) * | 2002-05-30 | 2010-04-06 | Sharp Kabushiki Kaisha | Liquid crystal display having a reflective electrode formed on an organic resin film |
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| US7692740B2 (en) * | 2002-05-30 | 2010-04-06 | Sharp Kabushiki Kaisha | Liquid crystal display having a reflective electrode formed on an organic resin film |
| CN1988163A (en) * | 2005-12-19 | 2007-06-27 | 三星电子株式会社 | Array substrate, method of manufacturing the same and display panel having the same |
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