CN103182687B - Field-assisted chemical mechanical polishing system and method - Google Patents

Field-assisted chemical mechanical polishing system and method Download PDF

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CN103182687B
CN103182687B CN 201110456130 CN201110456130A CN103182687B CN 103182687 B CN103182687 B CN 103182687B CN 201110456130 CN201110456130 CN 201110456130 CN 201110456130 A CN201110456130 A CN 201110456130A CN 103182687 B CN103182687 B CN 103182687B
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CN 201110456130
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CN103182687A (en )
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陈炤彰
谢启祥
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陈炤彰
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Abstract

本发明涉及一种抛光垫结构设计,其包括一底盘;一抛光垫本体,在所述抛光垫本体上具有若干个凹孔;若干个金属底部被设置于所述若干凹孔内,并且在每一所述若干凹孔内都具有一金属底部;一电源正极导线,其用于电性连接至一正极电源供应部;以及一电源负极导线,其用于电性连接至一负极电源供应部;其中所述电源正极导线及所述电源负极导线,穿过所述底盘而交错地连接至所述若干金属底部。 The present invention relates to a polishing pad structure design, including a chassis; a polishing pad body having a plurality of recesses in the polishing pad body; a plurality of metal is disposed on the bottom of the plurality of concave holes, and each of a plurality of said recesses having a bottom hole a metal; a positive power supply lead for the positive electrode is electrically connected to a power supply unit; and a negative power supply lead for the negative electrode is electrically connected to a power supply unit; wherein said positive power supply and the negative power supply lead wire, through said chassis and connected to said plurality of interleaved bottom metal. 本发明之抛光垫可以产生电渗透(Electro-osmosis)现象及电化学反应而使部份材料移除,进而有效降低残留应力、有效降低缺陷的产生、移除速率快及维持研磨颗粒均一性等优点及功效。 The polishing pad of the present invention can be produced electro-osmosis (Electro-osmosis) part of the electrochemical reaction phenomena and material removal, and therefore reduce the residual stress, reduce defects, the removal rate is fast and the like to maintain the uniformity of abrasive particles advantages and effects.

Description

电场辅助化学机械抛光系统及其方法 Field-assisted chemical mechanical polishing system and method

【技术领域】 TECHNICAL FIELD

[0001] 本发明涉及一种新颖的抛光垫结构设计、运用此一抛光垫电场辅助化学机械抛光系统,以及运用此一抛光垫之抛光方法有关。 [0001] The present invention relates to a novel design of the polishing pad, a polishing pad using this field-assisted chemical mechanical polishing system, and polishing method using the polishing pad of this relevant. 特别是与一种借着将正、负极交错地连接至位于抛光垫上的各个凹孔内之金属底部,以产生电渗透现象与电化学反应的抛光垫结构设计有关。 With one particular by the positive and negative alternately connected to each located at the bottom metal polishing pad of concave holes, osmotic phenomenon to generate electricity with the polishing pad relating to the structural design of the electrochemical reaction. 其可以兼具有效降低残留应力、有效降低缺陷的产生、移除速率快以及可以维持研磨颗粒均一性等优点及功效。 It may effectively reduce both the residual stress, reduce the occurrence of defects, fast particle removal rate and uniformity can be maintained and the advantages of polishing effectiveness.

【背景技术】 【Background technique】

[0002] 在制造集成电路时,常常需要在一半导体晶圆表面上进行沈积,并接着自其上移除多层次之导电、半导电及介电材料。 [0002] In the fabrication of integrated circuits, it is often required on a deposition surface of a semiconductor wafer, and then removed from the multi-level thereon of conductive, semiconductive and dielectric materials. 一般而言,在半导体晶圆表面上沈积材料层后,晶圆之表面会变得不平坦,因此,便需要进行将晶圆表面加以平坦化的相关作业。 Generally, on a semiconductor wafer surface after depositing a material layer, the surface of the wafer becomes less flat, and therefore, it is necessary to perform the associated job planarized wafer surface. 平坦化作用用来移除例如粗糙表面、刮痕及受污染部分等等,非所欲之表面构形及表面缺陷。 Flattening function is used to remove such as rough surfaces, scratches and contaminated portion and the like, of the non-desired surface topography and surface defects.

[0003] 化学机械加工(Chemical Mechanical Polishing,CMP)为一种用于半导体晶圆的平坦化技术,其将一半导体晶圆装在一化学机械抛光装置中,并使之与一抛光垫相接触;同时借着将一化学体系(chemical-base)之研磨液,导入至晶圆与抛光垫之间的间隙内,并且利用所述研磨液及抛光垫之间的化学、机械作用,进而使得晶圆表面得以进行抛光与平坦化作用。 [0003] Chemical mechanical processing (Chemical Mechanical Polishing, CMP) as a planarization technique for a semiconductor wafer, a semiconductor wafer which is mounted in a chemical mechanical polishing apparatus, and allowed to contact with a polishing pad ; the same time, by a chemical system (chemical-base) of the polishing liquid, is introduced into the gap between the wafer and the polishing pad, and by chemical polishing liquid between the polishing pad and the mechanical action, thus making the crystal rounded surface to be polished and planarized effect.

[0004] 然而,化学机械抛光作用虽是现今半导体制程中,用来达到全域性平坦化的一项重要技术,但是当化学机械研磨制程被应用于以铜导线与以Low-k (低介电值)材料为主的介电层之多层导线架构的平坦化制程中时,其往往需面对残留应力、刮痕以及在平坦化作用之后的后续清洗需要进一步克服的问题。 [0004] However, chemical mechanical polishing action though it is now a semiconductor manufacturing process, to achieve an important technique global flattening, but when the chemical mechanical polishing process is applied to a copper wire and to Low-k (low dielectric value) multilayer material consisting mainly of lead dielectric layer architecture planarization process, which often takes the face of the residual stress, and subsequent washing scratches after planarization problem is further action needs to be overcome.

[0005] 如图十一所示,在以化学机械抛光之方式对一半导体晶圆90进行抛光作业后,铜导线91之内部常常会出现产生孔洞911,而在所述铜导线91与半导体晶圆90的氧化层92之间,也同样会出现具有孔洞911之问题,进而造成半导体晶圆之缺陷。 [0005] As shown, after the chemical mechanical polishing of a semiconductor wafer 90 on the way the polishing operation, the inner copper conductor 91 will often produce eleven holes 911, and the copper wire 91 and the semiconductor crystal oxide layer 90 between the circle 92, will also have a problem of the hole 911, thereby causing defects in semiconductor wafers. 因此,目前仍有必要研发新产品,以解决上述缺点及问题。 Therefore, there is still a need to develop new products, in order to solve the above problems and disadvantages.

【发明内容】 [SUMMARY]

[0006] 本发明之目的在于提供一种新颖的抛光垫结构设计,其包括一底盘;一抛光垫本体,其不具导电性并且被设置于所述底盘上,同时在所述抛光垫本体上具有若干凹孔;若干个金属底部,其设置于所述若干凹孔内,并且在每一所述若干凹孔内都具有一金属底部;一电源正极导线,其用于电性连接至一正极电源供应部;以及一电源负极导线,其用于电性连接至一负极电源供应部;其中所述电源正极导线及所述电源负极导线,穿过所述底盘而交错地连接至所述若干金属底部。 [0006] The object of the present invention to provide a novel design of the polishing pad, which comprises a chassis; a polishing pad body, which is non-conductive and is disposed on the chassis, while the polishing pad having a body a plurality of recesses; a plurality of metal bottom, a plurality of recesses provided in the bore, having a bottom and a metal in each of said plurality of concave holes; a positive power supply lead for the positive electrode is electrically connected to a power source supply portion; and a negative power supply lead for the negative electrode is electrically connected to a power supply unit; wherein the power supply positive lead and the negative electrode lead through the chassis and connected to said plurality of interleaved bottom metal . 所述若干金属底部之材质较佳地为铜。 Some of the material of the base metal is preferably copper.

[0007] 在上述之抛光垫结构设计中,所述若干凹孔之间较佳地具有一细槽孔,以允许任两个相邻凹孔之间的电性与流体通连,而所述细槽孔的宽度较佳地比所述金属底部之宽度更窄。 [0007] In the above-described design of the polishing pad in between said plurality of recesses preferably has a small slot to allow any two adjacent electrical and fluid communication between the recesses, and the the width of the thin slot width is preferably narrower than the bottom of the metal. 另外所述金属底部之边缘较佳地并且不与所述抛光垫本体接触。 Further the edge of the bottom of a metal and preferably with no body contact the polishing pad.

[0008] 在本发明的另一实施方式中,本发明之抛光垫结构设计可以进一步包含有一沟槽,并且所述沟槽内具有至少两个金属底部,并且所述沟槽之宽度较所述金属底部之宽度更宽。 [0008] In another embodiment of the present invention, the polishing pad structure design of the present invention may further comprise a trench, said trench having a bottom and at least two metals, and the width of the groove than the the wider width of the base metal. 此外,于本发明之抛光垫上之所述若干凹孔,以大体上与所述沟槽之延伸方向平行之方向而排列成一凹孔列,并且所述凹孔列与所述沟槽彼此平行并且间隔地设置于所述抛光垫上。 Further, in the polishing pad of the present invention a plurality of recesses, extending in a direction substantially parallel to the said direction of trenches arranged in a recessed hole rows, columns and the recesses to each other and parallel to the groove spacer disposed on the polishing pad.

[0009] 在本发明的另一实施方式中,本发明之抛光垫上的所述若干凹孔与所述沟槽之间还包括一沟渠,以允许所述若干凹孔列与所述沟槽之间之间的电性与流体通连,其中所述沟渠之宽度较佳地比所述金属底部之宽度更窄。 [0009] In another embodiment of the present invention, between the polishing pad of the present invention a plurality of recesses and said grooves further comprises a trench, a plurality of recesses to allow the column to the trenches electrical and fluid communication between the rooms, wherein a width of the trench is preferably greater than the width of the bottom of the narrower metal.

[0010] 本发明另外提供一种电场辅助化学机械抛光系统及运用所述系统之抛光方法,其可以有效降低残留应力、有效降低缺陷的产生、并且具有移除速率快,以及可以维持研磨颗粒均一性等优点及功效,以解决习知技术易于产生残留应力以及晶圆易产生缺陷等问题。 [0010] The present invention further provides a polishing method of field-assisted chemical-mechanical polishing system and the operation of the system, which can effectively reduce the residual stress, reduce defects and having a removal rate is faster, and the abrasive particles can be maintained uniform and other advantages and effects of the conventional techniques to solve the residual stress is prone to defects and problems such as the wafer is easy to produce.

[0011] 在上述之电场辅助化学机械抛光系统中,其包括:一本体,其具有一工件固定部及一平台,并且所述工件固定部与所述平台间之垂直距离可加以调整;所述平台具有一驱动部,其用以驱动所述平台转动;一依据本发明之抛光垫,其设于所述平台上;一电源供应部,其具有一电源正极源及一电源负极源,所述电源正极源及所述电源负极部分别连接至依据本发明之抛光垫的电源正极导线以及电源负极导线上;以及一研磨液供应部,其用于将一研磨液分布于所述依据本发明之抛光垫上。 [0011] In the field of assisted chemical mechanical polishing system, comprising: a body having a workpiece holding portion, and a platform, and the vertical distance between the fixing portion of the workpiece can be adjusted with the platform; the a platform having a drive unit which rotates to drive said platform; a polishing pad according to the present invention, which is provided on the platform; a power supply unit having a positive power source and a negative power source, the the positive power supply and the power source is connected to the negative electrode portions according to the present invention a polishing pad and a positive power supply lead on the negative electrode conductor; and a polishing liquid supply unit for the distribution of a polishing liquid according to the present invention, the polishing pad.

[0012] 本发明又另外提供一种电场辅助化学机械抛光之方法,其包括下列步骤: [0012] The present invention yet further provides a chemical-mechanical polishing of an electric field assist method, comprising the steps of:

[0013] [1]准备步骤:准备一依据本发明之电辅助化学机械抛光系统; [0013] [1] Preparation steps of: preparing a secondary chemical-mechanical polishing system according to the present invention electrically;

[0014] [2]电渗透及电化学反应步骤:将所述预定加工物件之预定加工层与所述抛光垫之抛光垫本体接触,并且将所述预定加工层浸于所述研磨液中,在藉由所述电源供应部进行供电后,便会产生电渗透现象及电化学反应,以使得所述研磨液于所述抛光垫本体上循环,并且使得所述预定加工层部份被逐渐移除; [0014] [2] Electro-osmosis and electrochemical reaction step of: the predetermined processing of a predetermined processing object layer in contact with the polishing pad of a polishing pad body, and said predetermined processing is immersed in the polishing liquid layer, after the power supply by the power supply unit, will produce electro-osmotic phenomena and electrochemical reactions, so that the polishing liquid circulating in the body of the polishing pad, and such that the predetermined portion is progressively shifted working layer except;

[0015] [3]钝化反应步骤:所述预定加工层在电化学反应之移除过程中,其表面会逐渐生成一钝化层; [0015] [3] The passivation reaction steps: said predetermined working layer during removal of electrochemical reaction, the surface will gradually generate a passivation layer;

[0016] [4]机械研磨步骤:利用所述抛光垫之转动来带动所述研磨液,以对已生成所述钝化层之预定加工层进行机械研磨; [0016] [4] mechanical polishing step of: using the polishing pad to drive the rotation of the polishing liquid to perform mechanical polishing of the predetermined processing has been generated the passivation layer of the layer;

[0017] [5]完成步骤:反复进行所述电化学反应、所述钝化反应步骤及所述机械研磨步骤后,即可获得一表面经平坦化之预定加工层。 [0017] [5] finish step: After repeating the electrochemical reaction, the reaction step and the passivation step of mechanical polishing, to obtain a predetermined surface of the planarized layer processing.

[0018] 本发明之上述目的与优点,不难从下述所选用实施例之详细说明与附图中,获得深入了解。 [0018] The above objects and advantages of the present invention, it is easy from the following detailed description of the chosen embodiment with the accompanying drawings of the embodiments, the gain insight.

[0019] 兹以下列实施例并且配合图式详细说明本发明于后: [0019] In the following examples and hereby with the drawings illustrate the present invention in detail in:

【附图说明】 BRIEF DESCRIPTION

[0020] 图1为本发明之电场辅助化学机械抛光系统之示意图。 A schematic view of a chemical mechanical polishing system [0020] FIG. 1 of the present invention the auxiliary field.

[0021] 图2A为本发明之抛光垫之示意图。 [0021] Figure 2A a schematic view of the present invention of a polishing pad.

[0022] 图2B为沿1-Ι剖面线之剖视示意图。 [0022] FIG. 2B is a cross-sectional view taken along the line 1-Ι view of FIG.

[0023] 图2C为沿I1-1I剖面线之剖视示意图。 [0023] FIG. 2C is a cross sectional view taken along line I1-1I FIG.

[0024] 图3A为本发明之沟槽之局部示意图。 [0024] FIG. 3A partial schematic view of the present invention trenches.

[0025] 图3B为本发明之凹孔列之局部示意图。 [0025] The partial schematic view of FIG. 3B recesses column of the present invention.

[0026] 图4为本发明之研磨颗粒被带动之示意图。 [0026] FIG. 4 abrasive particles of the present invention is driven in a schematic view.

[0027] 图5为本发明之电场强度之示意图。 [0027] FIG. 5 is a schematic diagram of the invention the electric field strength.

[0028] 图6为本发明之电场辅助化学机械抛光方法之流程示意图。 [0028] FIG. 6 of the present invention an auxiliary flow of an electric field of chemical mechanical polishing method of FIG.

[0029] 图7A为本发明之电场辅助化学机械抛光过程一之示意图。 A chemical mechanical polishing process schematic diagram of [0029] FIG. 7A auxiliary field of the present invention.

[0030] 图7B为本发明之电场辅助化学机械抛光过程二之示意图。 The chemical mechanical polishing process schematic of two [0030] FIG. 7B auxiliary field of the present invention.

[0031] 图7C为本发明之电场辅助化学机械抛光过程三之示意图。 [0031] a schematic view of a chemical mechanical polishing process three electric auxiliary FIG. 7C present invention.

[0032] 图7D为本发明之电场辅助化学机械抛光过程四之示意图。 The chemical mechanical polishing process schematic of four [0032] FIG 7D auxiliary field of the present invention.

[0033] 图8为半导体晶圆之另一型式之示意图。 [0033] FIG. 8 is a schematic view of another type of a semiconductor wafer.

[0034] 图9为本发明之电场辅助之反应过程之示意图。 [0034] FIG. 9 is a schematic diagram of the field-assisted reaction process of the invention.

[0035] 图10为本发明之金属材料腐蚀变化曲线之示意图。 [0035] FIG. 10 is a schematic view of a graph of the corrosion of a metal material changes invention.

[0036] 图11为现有技术中化学机械抛光后之示意图。 [0036] FIG. 11 is a schematic diagram of the prior art chemical mechanical polishing.

【具体实施方式】 【detailed description】

[0037] 有关本发明之前述及其它技术内容、特点与功效,在以下将配合一较佳实施例之参考图式来加以详细说明,此一较佳实施例仅是用例示说明本发明的一种实施方式,而并且非用于局限本发明之内容。 [0037] For other techniques mentioned SUMMARY Before the present invention, the characteristics and effects, in the following with reference to the drawings of a preferred embodiment to be described in detail, a preferred embodiment of this embodiment is merely illustrative of the present invention described a embodiments as described, but limited and not used for the present invention.

[0038] 为了更清楚地描述本发明之特征,在本发明的所述对应图式中,所述图式中各组件的相对大小,并非是完全依比例绘制的。 [0038] In order to more clearly describe the feature of the present invention, in the figures corresponding to the present invention, the drawings of the relative size of each component, is not entirely drawn to scale. 同时,在以下的实施例中所提到的方向用语,例如:上、下、左、右、前或后等,亦仅是用于参照随附图式的方向。 Meanwhile, the direction in the following examples mentioned terms such as: upper, lower, left, right, front or back, which also only with reference to the accompanying drawings for orientation. 因此,所述方向用语仅是同样用于说明并非是用于限制本发明。 Accordingly, the directional terms are merely used to illustrate the same is not intended to limit the present invention.

[0039] 如图一至图三B所示,本发明为一种用于图一之电场辅助化学机械抛光系统上的抛光垫。 [0039] As shown in FIG three to a B, the present invention is a method for a field of view of the auxiliary polishing pad chemical mechanical polishing system. 请参照图二A至图二C,所述抛光垫20具有一抛光垫本体21、一底盘22及若干个金属底部23 ;所述抛光垫本体21设置于所述底盘22上并且不具导电性,同时所述抛光垫本体21上具有若干个凹孔211及若干个沟槽212。 Referring to Figure II A two C, the polishing pad 20 with 21, and a plurality of metal polishing pad body having a bottom chassis 2223; the polishing pad 21 disposed on the main body chassis 22 and non-conductive, while the polishing pad body 21 having a plurality of recesses 211 and a plurality of grooves 212. 所述底盘22可以具有导电性,并且所述若干个金属底部23分布于所述底盘22上之凹孔211内,并且每一凹孔211中均具有一个金属底部23,而每一沟槽212具有至少两个金属底部23。 The chassis 22 may have conductivity, and the plurality of bottom metal profile 23 in the recessed hole 22 of the chassis 211, and each recessed hole 211 has a metal bottom 23, and each trench 212 a bottom 23 having at least two metals.

[0040] 参见图二B,其为本发明之抛光垫20沿1-Ι之凹孔列的剖视示意图。 [0040] Referring to Figure II B, which the present invention a polishing recess 20 a schematic sectional view along the rows of holes 1-Ι pad. 由所述图中可知,本发明之抛光垫20上的各个凹孔211通过抛光垫本体21而区隔成不同的电化学反应区间。 Seen from the FIG., The polishing pad of the present invention on the respective recesses 20 of the main body 211 of the polishing pad 21 to a different segment of the electrochemical reaction space. 同时,所述若干凹孔211内之金属底部23还进一步地通过所述电源正极导线24及所述电源负极导线25,而各别交错地电性连接至电场辅助化学机械抛光系统的所述电源正极部31与所述电源负极部32,而在一研磨液被提供至所述抛光垫20之后,各别地形成如图九所示之正极与负极电化学反应区间,以增进本发明之抛光垫20的电化学抛光效果。 Meanwhile, the bottom metal within said plurality of recesses further 21,123 by the power source 24 and the positive lead of the negative power supply conductor 25, and the respective cross electrically connected to the electric field assisted chemical mechanical polishing system the positive electrode portion 31 and the negative power supply unit 32, is supplied to a polishing liquid after the polishing pad 20, shown in Figure 9 are formed individually the cathode and the anode electrochemical reaction zone, to enhance the polishing of the present invention electrochemical polishing pad 20. 如图九所示,本发明之抛光垫20在电流通过并形成正极与负极电化学反应区间之后,可使所述预定加工层71之铜离子(Cu2+)游离至研磨液40中,进而加速所述预定加工层71移除之速率。 As shown later, the polishing pad of the present invention by a current 20 and positive and negative electrodes forming an electrochemical reaction space nine enabling said predetermined processing layer 71 of copper ions (Cu2 +) to free the polishing liquid 40, thereby accelerating the the rate of removal of said predetermined processing layer 71.

[0041] 接着,请参照图三B,其为本发明之抛光垫20的凹孔列的透视图。 [0041] Next, referring to FIG three B, which the present invention a perspective view of the polishing pad 20 recesses column. 从所述图中可以发现,在所述凹孔列中的所述若干个凹孔211之间具有一细槽孔213,以允许任意两个凹孔211之间的电性与流体通连,其中所述细槽孔213的宽度较佳地比所述金属底部23之宽度更窄,以有效地维持各个凹孔211内的电化学反应区间之性质。 Can be found from the figure, it has a small slot 213 between the recesses 211 in the column a plurality of recesses to allow any two of the recesses between the electrical and fluid communication 211, wherein said fine slot bottom width 213 than the width of the metal 23 is preferably of a narrower, effective to maintain the reaction zone of the electrochemical properties of the respective recesses 211. 此外,本发明借着在所述若干个凹孔211之间设置细槽孔213,可以使得本发明之抛光垫20得以在进行供电后,进一步诱发如图四与图五所示之电渗透现象,并使得研磨液40可以于所述抛光垫本体21上循环(如图四所示,在产生电渗透现象后,所述研磨液40中之研磨颗粒40A将会反复翻动)。 Further, the present invention is provided by thin slots between the plurality of recesses 211,213, the present invention may be such that the polishing is performed after the power supply pads 20, further induce electro-osmosis phenomenon shown in Figure IV of the five , so that the polishing liquid and the polishing pad 40 may be in circulation on the body 21 (as shown four, after generating electricity osmotic phenomenon, the polishing liquid of the abrasive particles 40 to repeatedly flip 40A).

[0042] 请进一步参阅图七A,如图七A所示,在所述研磨液40中具有若干个小研磨颗粒41及及若干个大研磨颗粒42,一般而言,在未通电的情况下所述大研磨颗粒42会因重量较重而会落至所述凹孔211中,而所述小研磨颗粒41则会介于所述抛光垫本体21与所述预定加工层71之间,以使得所述预定加工层71之部份材料71A得以被移除。 [0042] Further referring to Figure VII A, as shown in FIG seven A, having a plurality of abrasive particles 41 and the small and the large number of abrasive particles in the polishing liquid 4042, the general situation is not energized the abrasive particles 42 due to the large heavy weight but will fall into the recesses 211, and the small abrasive particles 41 will be interposed between the polishing layer 21 and the predetermined processing body pad 71 to 71 such that the predetermined portion of the processing material layer 71A is removed. 然而在习知抛光作业中,所述大研磨颗粒42(及/或习知抛光作业所产生之大颗粒碎肩),往往会因为抛光作业所引起的研磨液扰流,而被带动至所述抛光垫本体21与所述预定加工层71之间,进而导致研磨颗粒尺寸不均以及刮痕等等问题与缺陷。 However, in the conventional polishing operations, (broken shoulder large particles arising and / or a conventional polishing operation) of the large abrasive particles 42, often because of the polishing operation due to a polishing liquid spoiler, is led to the the polishing pad body 21 between the predetermined processing layer 71, leading to uneven abrasive particle size, and so on scratches and defects.

[0043] 承上所述,本发明之抛光垫20借着在所述若干个凹孔211之间提供一细槽孔213,以允许任两个凹孔211内的金属底部23之间的电性与流体通连,并使得所述若干金属底部23之间出现电渗透现象,而使得尺寸较大之研磨颗粒40A及/或碎肩,得以被吸附于所述金属底部23上,也就是说,尺寸较大之研磨颗粒40A及/或碎肩除了会因重量落入所述凹孔211以外(如图七A所示),也会因为电渗透现象而吸附于金属底部23上,进而使得所述抛光垫本体21与所述预定加工层71间之研磨液40的研磨颗粒40A尺寸较小并且较为均一,而避免尺寸较大之研磨颗粒40A及/或碎肩对于所述预定加工对象70表面之伤害。 [0043] bearing on the polishing pad of the present invention by providing a small slot 20 between the plurality of recesses 211,213, to allow an electrical connection between any of the base metal in the two recesses 21 123 in fluid communication with the resistance, and so that the plurality of electro-osmotic phenomenon bottom metal 23, such that the larger the size of the abrasive particles 40A and / or broken shoulder, is adsorbed to the metal on the bottom 23, i.e. larger size of the abrasive particles 40A and / or crushed by the weight of the shoulder in addition falls outside the recesses 211 (seven shown in FIG. A), since electro-osmosis phenomenon also adsorbed on the base metal 23, thereby making body of the polishing pad 21 and the smaller the predetermined processing layer 71 of the polishing abrasive particles 40 and 40A of relatively uniform size, while avoiding large size of the abrasive particles 40A and / or crushed shoulder 70 to the predetermined object the surface damage.

[0044] 如图二A、图二C与图三A所示,在本发明的另一实施方式中,本发明之抛光垫还包括一沟槽212,其中所述沟槽212的宽度比所述金属底部23的宽度更宽(请参见图二C),并且每一沟槽212内具有两个以上之金属底部23。 [0044] Figure II A, as shown in Figure II and Figure III C A, in another embodiment of the present invention, the polishing pad of the present invention further comprises a groove 212, wherein the ratio of the width of the trench 212 the width of said bottom metal 23 is wider (see Figure two C), wherein a bottom 23 having two or more metal within each trench 212. 如图二C与图三A所示,在所述沟槽中的所述若干金属底部同样通过所述电源正极导线24及所述电源负极导线25,而各别交错地电性连接至电场辅助化学机械抛光系统的所述电源正极部31与所述电源负极部32,藉此在所述沟槽内之所述若干金属底部23于通电后同样会诱发电渗效果,同时由于所述沟槽212的宽度比所述金属底部23的宽度更宽,因此其将可以更有效地容纳与吸附尺寸较大之研磨颗粒40A及/或碎肩。 FIG di-C shown in FIG three A, the number in the trench bottom metal negative electrode lead 25 by the same positive electrode lead 24 and the power supply, individually alternately and electrically connected to the auxiliary field the positive power supply portion 31 a chemical mechanical polishing system and the negative power supply unit 32, whereby the bottom of the trenches within said plurality of metal 23 after the same power induces electroosmotic effect, and because the groove a width wider than the width of the bottom 212 of the metal layer 23, which will thus be more effectively accommodating the adsorption of larger size abrasive particles 40A and / or broken shoulder.

[0045] 请进一步参照图五,在本发明的又另一实施方式中,其为本发明之电渗作用的电场强度之示意图,其中剖面线愈密代表电场愈强。 [0045] With further reference to FIG V. In yet another embodiment of the present invention, a schematic diagram of the invention the electric field strength thereof present electroosmosis, wherein the more dense hatching Representative stronger the field. 由图五中可知,在通电后,在靠近所述金属底部23边缘的剖面线最密集,代表所述处之电场最强。 Seen from FIG Fifth, after the energization, the section line of the metal near the bottom edge 23 of the most intensive, the most representative of the electric field at the. 因此,本发明在设计上,所述金属底部23边缘较佳地皆为外露之设计(也就是所述金属底部23边缘不与所述抛光垫本体21接触),进而使得所述研磨液40中之研磨颗粒40A与碎肩可达到较佳之吸附与滚动效果。 Accordingly, the present invention is designed, the bottom edge 23 of the metal is preferably of the design are all exposed (i.e. the bottom edge 23 of the metal body 21 is not in contact with the polishing pad), and further such that the polishing liquid 40 the abrasive particles can reach the shoulder 40A and the broken adsorbed and better rolling effect.

[0046] 请再参阅图二A,本发明之抛光垫的一实施方式之设计上,所述若干凹孔211之排列方向大体上与所述沟槽212之延伸方向平行以构成若干个凹孔列,并且所述若干凹孔列与所述若干沟槽212之间彼此平行并且间隔地排列。 [0046] Referring again to Figure II A, the design of the polishing pad of the present invention is an embodiment of the embodiment, the arrangement direction of the plurality of recesses 211 extending in a direction substantially parallel to the groove 212 to form a plurality of recesses columns, and a plurality of columns and said plurality of recesses between the grooves 212 parallel to each other and arranged at equal intervals. 另外,由图二A与图三B中可知,所述凹孔列的各个凹孔211与所述沟槽212之间还包括一沟渠214,以允许所述若干凹孔211与所述沟槽212之间的电性与流体通连,进而使得所述若干凹孔211与所述沟槽212之间也能同样诱发电渗透现象。 Further, apparent from Figure II A and B in Figure III, further comprising a trench between the respective recesses 214 of the recesses 211 and the row trenches 212 to allow the plurality of recesses 211 and the groove electrical and fluid communication between the 212 and further such that the plurality of recesses 211 between the groove 212 and can be similarly induce electro-osmosis phenomenon. 此外,所述若干沟渠214的宽度较佳地比所述金属底部23之宽度更窄,以有效地维持各个凹孔211内的电化学反应区间之性质。 Furthermore, the plurality of trenches 214 are preferably the width bottom width of the metal 23 is narrower than, effective to maintain the reaction zone of the electrochemical properties of the respective recesses 211.

[0047] 在本发明的再一实施方式中,本发明提供了一种运用本发明之抛光垫的电场辅助化学机械抛光系统,所述系统包括有:一本体10、一依据本发明之抛光垫20、一电源供应部30及一用于供应研磨液之研磨液供应部;其中所述本体10具有一工件固定部11及一平台12 ;所述工件固定部11用以固定一预定加工对象70,并且所述工件固定部11与所述平台12之间的垂直距离可加以调整;所述平台12具有一驱动部121,其用于驱动所述平台12相对于一设于所述平台12上之抛光垫20转动。 [0047] In yet another embodiment of the present invention, in one embodiment, the present invention provides the use of a polishing pad of the present invention the electric field assisted chemical mechanical polishing system, said system comprising: a main body 10, according to a polishing pad of the present invention 20, a power supply unit 30, and a polishing liquid supply portion for supplying the polishing slurry; wherein the body 10 has a fixing portion 11, and a work platform 12; the workpiece fixing portion 11 for fixing a predetermined object to be processed 70 and the vertical distance between the fixing portion 12 of the workpiece 11 can be adjusted with the platform; said platform 12 has a drive section 121 for driving the platform 12 with respect to the platform 12 disposed in a the polishing pad 20 is rotated.

[0048] 另外请参阅图七A,所述预定加工对象70具有一预定加工层71及一基层72,所述预定加工层71为金属材质,而所述基层72可以为一氧化物(例如:硅);其中所述预定加工对象70可以为一半导体晶圆,而所述预定加工层71在未加工前为处于连接状态下之若干铜导线,而在铜与氧化物之间则可以例如钽(Ta)来加以分隔。 [0048] In addition, please refer to Figure VII A, the predetermined object having a predetermined processing layers 70 and 71 a base layer 72, the predetermined processing layer 71 is made of metal, and said base layer 72 may be an oxide (for example: Si); 70 wherein said predetermined object may be a semiconductor wafer, and said predetermined machining process is not in front of layer 71 as in the case of a number of copper wire connected state, and between the copper and tantalum oxide may be e.g. (Ta) to be separated.

[0049] 所述电源供应部30,具有一电源正极部31及一电源负极部32 ;所述电源正极部31及所述电源负极部32分别借着依据本发明之抛光垫的电源正极导线24及所述电源负极导线25,而交错地连接至本发明之抛光垫的所述若干金属底部23 (所述金属底部23通电后即形成电极)。 [0049] The power supply unit 30, a power source having a positive electrode 31 and a negative power supply section 32; a positive power source and the negative power supply section 31 respectively through the positive power supply portion 32 according to the present invention a polishing pad wire 24 and the negative power supply conductor 25, and 23 are connected alternately to the polishing pad of the present invention a number of the base metal (the metal bottom electrode 23 is formed after the energization). 关于所述电源正极部31及所述电源负极部32之交错连接情况,请参考图二B、图二C、图三A及图三B,其中,所述沟槽212中之相邻金属底部23,交错地电性连接至所述电源正极部31及所述电源负极部32,而相邻之凹孔211中之金属底部23,也是同样交错地电性连接至所述电源正极部31及所述电源负极部32。 31 and interleaved on the negative power supply connection portion 32 of the positive power supply section, please refer to Figure II B, two adjacent bottom FIG C, Figure A and FIG three three B, where the groove 212 in the metal 23, interleaving and electrically connected to the positive power supply 31 and the negative power supply unit 32, and the bottom of the metal adjacent recesses 211 of 23, the same interleaving is electrically connected to the positive power supply section 31 and the negative power supply unit 32.

[0050] 再者,如图六所示,本发明又包括一种运用本发明的电场辅助化学机械抛光系统之方法,其包括下列步骤: [0050] Further, as shown in figure VI, the use of the present invention further comprises one field of the present invention is a method of assisted chemical mechanical polishing system, comprising the steps of:

[0051] [1]准备步骤51:准备一依据本发明之电场辅助化学机械抛光系统,并将一研磨液40提供至依据本发明之抛光垫20上。 [0051] [1] Preparation Step 51: preparation of an auxiliary chemical-mechanical polishing system according to the present invention an electric field, and to provide a polishing liquid 40 according to the present invention a polishing pad 20.

[0052] [2]电渗透及电化学反应步骤52:如图七A所示,将所述预定加工物件70之预定加工层71与所述抛光垫20之抛光垫本体21接触,并使得所述预定加工层71浸于所述研磨液40中;在藉由所述电源供应部30来进行供电后,便会产生电渗透现象及电化学反应,进而使得所述金属底部23之边缘产生涡流而达到微小的扰动,并使得所述研磨液40于所述抛光垫本体21上循环,而使得所述预定加工层71部份得以被逐渐移除。 [0052] [2] Electro-osmosis and electrochemical reaction Step 52: As shown in FIG seven A, contacting the polishing pad 20 of the body 21 to a predetermined working processing layer 70 of a predetermined object with the polishing pad 71, and so that the said predetermined processing layer 71 is immersed in the polishing liquid 40; after the power supply by the power supply unit 30 performs, will produce electro-osmotic phenomena and electrochemical reactions, and further such that the metal edge of the bottom 23 of the eddy current is generated to achieve small perturbations, such that the polishing liquid and the polishing pad 40 on the circular body 21, such that the predetermined portion is processed layer 71 is progressively removed.

[0053] [3]钝化反应步骤53:所述预定加工层71在电化学反应之移除过程中,其表面会逐渐生成一钝化层80 (如图七B所示,在所述金属底部23产生氧化反应后,其所产生之氧化物81会逐渐于所述预定加工层71之表面上形成所述钝化层80)。 [0053] [3] The passivation reaction step 53: the predetermined processing layer 71 during removal of electrochemical reaction, the surface will gradually generate a passivation layer 80 (shown in FIG seven B, the metal after the oxidation reaction at the bottom 23, it produces the oxide 81 gradually to the predetermined processing layer 71 is formed on the surface of the passivation layer 80).

[0054] [4]机械研磨步骤54:图七C所示,利用所述抛光垫20之转动来带动所述研磨液40,以对已生成所述钝化层80之预定加工层71进行机械研磨。 [0054] [4] Mechanical Polishing Step 54: As shown in Figure VII C, the use of the polishing pad 20 is rotated to drive the polishing liquid 40 to a predetermined processing on the mechanical layer 71 has been generated the passivation layer 80 of grinding.

[0055] [5]完成步骤55:如图七D所示,反复进行所述电渗透与电化学反应步骤52、所述钝化反应步骤53及所述机械研磨步骤54并达到一研磨终点后,即可使得所述预定加工层71之表面被加以平坦化。 After seven D As shown, the electro-osmotic repeated electrochemical reaction step 52, step 53, and the passivation reaction of the mechanical polishing step of polishing end point 54 and reaches a: [0055] [5] completion of step 55 , can be predetermined such that the surface of the working layer 71 is planarized.

[0056] 在图七D中所示之预定加工层71在经过本发明之加工后,每一铜导线(预定加工层71)已分开,并且表面平坦;在本实施例中,虽以未贯穿所述预定加工对象70之铜导线进行说明,但在实务上,铜导线也可以是贯穿所述预定加工对象70之型式(如图八所示)。 [0056] The predetermined processing layer shown in FIG. 71 D, seven processed in the present invention, each of the copper wire (predetermined processing layer 71) have been separated, and a flat surface; in the present embodiment, although not to penetrate the predefined object of the copper wires 70 will be described, but in practice, the copper wire may be run through a predetermined pattern 70 of the object (shown in Figure 8).

[0057] 更详细的说,在所述研磨液40中之成份包含有化学溶液、腐蚀抑制剂、螯合剂与其它添加剂(例如:悬浮颗粒)。 [0057] In more detail, the components in the polishing liquid 40 with a chemical solution, a corrosion inhibitor, a chelating agent with other additives (e.g.: suspended particles). 化学溶液可对所述预定加工层71产生腐蚀,并透过所述研磨液40中的腐蚀抑制剂、螯合剂与其它添加剂,来产生钝化与加速溶解的效果。 Chemical solution 71 can cause corrosion of processing said predetermined level, and to generate and accelerate the dissolution of the passivation effect through the corrosion inhibitor in the polishing liquid 40, a chelating agent and other additives. 如图九所示,在电渗透及电化学反应步骤52中,所述研磨液40之化学反应在配合电流的通过下,可使所述预定加工层71之铜离子(Cu2+)游离至所述研磨液40中,进而加速所述预定加工层71之移除速率。 Shown in Figure 9, the electro-osmosis and electrochemical reaction in the step 52, the polishing liquid 40 of a chemical reaction by mixing at a current for enabling said predetermined processing layer 71 of copper ions (Cu2 +) to the free in the polishing liquid 40, thereby accelerating the removal rate of the predetermined processing of the layer 71. 另外,由于受到电渗作用之电场分布的影响,所述研磨液40会于所述抛光垫本体21与所述预定加工层71表面之间不断循环,进而达到加速排肩之效果。 Further, due to the impact effect of the electric field distribution of the retentate, the polishing liquid on the polishing pad 40 will body 21 continuously circulated between the predetermined surface processing layer 71, so as to achieve the effect of accelerating the discharge of the shoulder.

[0058] 此外,在产生电渗透现象及电化学反应时,连接至所述电源正极部31之金属底部211会发生氧化反应,进而使所述预定加工层71表面产生一钝化层80(即对应于所述钝化反应步骤53);所述钝化层80能保护着所述预定加工层71表面而不会产生化学溶解的现象,再另外藉由外加磨料(所述研磨液40中之研磨颗粒)与机械力(所述抛光垫20之转动)等作用来移除所述钝化层80及所述预定加工层71。 [0058] Further, when the crossover phenomenon generating electrical and electrochemical reactions, the positive power supply is connected to the bottom portion 31 of the 211 metal oxidation reaction will occur, and thus the predetermined surface processing layer 71 generates a passivation layer 80 (i.e. corresponding to the passivating reaction step 53); the passivation layer 80 protects the surface of the predetermined processing layer 71 without causing the phenomenon of chemical dissolution, and then additional abrasive is applied by (the polishing liquid 40 in the abrasive particles) and mechanical force (rotation 20 of the polishing pad) and so on to remove the passivation layer 80 and the layer 71 of the predetermined processing.

[0059] 在加工过程中,由于所述钝化反应步骤53与所述机械研磨步骤54不断重复进行,因此,所述钝化层80也会不断产生,进而使所述预定加工层71得以在具有钝化层80的保护下而逐渐被移除,进而减少所述预定加工层71于机械抛光之后的残留应力。 [0059] In the process, since the reaction of the passivation step 5354 with the repeated mechanical polishing step, therefore, the passivation layer 80 are also generated, and thus the predetermined layer 71 is processed in the passivation layer 80 having the lower protective gradually removed, thereby reducing the predetermined residual stress after working layer 71 to a mechanical polishing.

[0060] 如图十所示,其为本发明的金属材料腐蚀速率变化曲线,其中,第一区域A1为活化区(Active reg1n),此时金属将开始溶解;第二区域A2为活化-钝化转换区(Active-Passive transit1n reg1n),此时金属表面将会开始产生钝化层;第三区域A3为钝化区(Passive reg1n),此时钝化层会盖住金属表面,而腐蚀电流维持不变;而第四区域A4则为过钝化区(Transpassive reg1n),此时所述钝化层开始崩解。 [0060], which the present invention is a metal material corrosion rate change curve shown in FIG ten, wherein the first area A1 is an activated region (Active reg1n), this time the metal will begin to dissolve; second area A2 is an activated - blunt conversion of area (Active-passive transit1n reg1n), this time the metal surface will begin to passivation layer; the third area A3 passivation region (passive reg1n), this time will cover the metallic surface of the passivation layer, and the corrosion current unchanged; and the fourth area A4 was through passive region (transpassive reg1n), this time the passivation layer begin to disintegrate.

[0061] 由以上说明可知,本发明为在化学蚀刻与机械磨削两种移除机制作用下,对所述预定加工层71进行加工以达到平坦化之效果。 [0061] From the above description, the present invention is under the effect of two kinds of mechanical grinding and chemical etching removal mechanism, the predetermined processing layer 71 for processing to achieve the effect of flattening. 在本发明之导电方式设计方面,其具有制作方法简易、成本低廉及可控制研磨液流向之优点。 In the design of the conductive embodiment of the present invention, having a simple manufacturing method, the advantages of low cost and may control flow of a polishing liquid. 本发明借着将正负极交错之镶嵌型电极平均分布于所述抛光垫20上,不仅可以于电化学机械抛光制程中达成电化学反应之效果,也可产生电渗透(Electro-osmosis)现象,进而使得所述研磨液40得以被有效地循环利用,并增加材料移除之效率。 By the present invention, the positive and negative electrodes interleaved mosaic of evenly distributed to the polishing pad 20, not only the effect can be achieved in the electrochemical reaction of the electrochemical mechanical polishing process, the electro-osmosis can also be generated (Electro-osmosis) Phenomenon and further such that the polishing liquid 40 to be efficiently recycled, and increase the efficiency of removal of material. 此外,在所述研磨液40中所形成之颗粒较大的团聚研磨颗粒40A,亦可藉由此一电渗透现象而过滤并收集至所述沟槽212之电极(即金属底部23)上方,如此即可有效避免尺寸不均之研磨颗粒40A,于平坦化制程中镶埋至所述抛光垫上20,并增加预定加工对象70表面非所欲刮伤之机会。 In addition, the particles formed in the polishing liquid 40 larger agglomerated abrasive particles 40A, also by this electro-osmotic phenomenon was filtered and collected to the electrode 212 of the trench (i.e., the bottom metal 23) above, thus to avoid variation of size of the abrasive particles 40A, in the planarization process to the insert-polishing pad 20, and increase the chance of scratching the desired non-predetermined surface of the object 70.

[0062] 综上所述,本发明之优点及功效可归纳为: [0062] In summary, the advantages and effects of the present invention may be summarized as follows:

[0063] [1]可有效降低残留应力:在将化学机械研磨应用于针对铜导线以及以Low-k(低介电值)材料为主的介电层之多层导线架构之平坦化制程时,易造成残留应力;由于本发明在加工过程中,会不断产生所述钝化层80,而使得所述预定加工层71得以在钝化层80的保护下逐渐被移除,进而减少所述预定加工层71经机械抛光之后残留应力。 [0063] [1] can effectively reduce the residual stress: When applied to the chemical mechanical polishing planarization process for copper wires and a multilayer dielectric layer to Low-k (low dielectric value) of the framework material as the main wire , easily lead to residual stress; Since the present invention during processing, will continue to produce the passivation layer 80, such that the predetermined processing layer 71 is gradually removed under a protective passivation layer 80, thereby reducing the after the predetermined machining mechanical polishing layer 71 by the residual stress.

[0064] [2]可有效降低缺陷的产生:在对半导体晶圆进行化学机械研磨时,所述材料容易因机械加工之破坏而产生诸如孔洞之缺陷;由于本发明在加工过程中,会不断产生所述钝化层80,进而使得所述预定加工层71得以在钝化层80的保护下逐渐被移除,同时,由于受到电渗透现象的影响,尺寸较大的研磨颗粒将会被收集至所述沟槽22之电极(即金属底部23)上方而不会在所述抛光垫本体21与所述预定加工层71之间循环,因此将可有效降低缺陷产生之机率。 [0064] [2] can effectively reduce the occurrence of defects: When a semiconductor wafer chemical mechanical polishing, the material is susceptible to damage and machining of the defects such as voids; Since the present invention during processing, will continue generating the passivation layer 80, such that the further predetermined processing layer 71 is gradually removed under a protective passivation layer 80, while the influence due to electro-osmosis phenomenon, larger size abrasive particles will be collected to the electrode 22 of the trench (i.e., the bottom metal 23) above without the probability of generating in the body of the polishing pad predetermined processing cycles between layers 71, 21 thus can be effectively reduced and defects.

[0065] [3]移除速率快:本发明通过电场辅助,可使得所述预定加工层71之金属离子游离至所述研磨液40中,进而加速所述预定加工层71移除之速率。 [0065] [3] removal rate is fast: the present invention, by field-assisted, metal ion may be such that the predetermined processing of the free layer 71 to the polishing liquid 40, thereby accelerating the removal rate of the predetermined processing layer 71.

[0066] [4]维持研磨颗粒均一性:本发明藉由上述电渗透(Electro-osmosis)现象的影响,可使得所述研磨液40得以被有效地循环利用,并且所述研磨液40中尺寸较大研磨颗粒,将可被电渗透现象过滤并收集至所述沟槽212之电极上方,进而维持于所述抛光垫本体21与所述预定加工层71之间的研磨颗粒40A之尺寸均一性,并有效避免尺寸不均之研磨颗粒40A于平坦化制程中,镶埋至所述抛光垫20上而造成所述预定加工对象70表面刮伤之机会。 [0066] [4] to maintain the uniformity of the abrasive particles: By the present invention, the electrical Osmotic (Electro-osmosis) phenomenon, may be such that the polishing liquid 40 is effectively recycled, and the dimensions of the polishing liquid 40 larger abrasive particles, can be filtered and collected to the upper electrode 212 of the trench electro-osmosis phenomenon, and further maintained at the predetermined abrasive particles 21 and the working layer 71 between the size uniformity of the polishing pad body 40A uneven, the size of the abrasive particles and to avoid 40A to planarization process, causing the insert-to predetermined chance of scratching the surface of the object 70 on the polishing pad 20.

[0067] 以上说明仅是藉由较佳实施例来例示与详细说明本发明,而并非是用于局限本发明之内容,是以任何在未脱离本发明之精神与范围下,对于所述实施例所做的简单修改与变化,仍属于本发明所欲保护之范畴。 [0067] The above description is only preferred embodiments of the present invention is described by the detailed embodiment to illustrate, but not limit the invention of a content, without in any departing from the spirit and scope of the present invention, with respect to the embodiment Example modifications and changes made simple, still fall within the scope of protection of the present invention is desired.

Claims (10)

  1. 1.一种抛光垫,其包括: 一底盘; 一抛光垫本体,其不具导电性并且被设置于所述底盘上,并且在所述抛光垫本体上具有若干个凹孔以形成不同的反应区间; 若干金属底部,其设置于所述若干凹孔内,并且所述每一凹孔内都具有一个金属底部,其中所述金属底部之边缘并不与所述抛光垫本体接触,以增加靠近所述金属底部边缘的依据电渗作用的电场强度,以于所述若干凹孔的反应区间诱发电渗透现象; 一电源正极导线,用于电性连接至一正极电源供应部;以及一电源负极导线,用于电性连接至一负极电源供应部; 其中所述电源正极导线及所述电源负极导线,穿过所述底盘而交错地连接至所述若干金属底部。 1. A polishing pad, comprising: a chassis; a polishing pad body, which is non-conductive and disposed on said chassis and having a plurality of recesses in the body to form the polishing pad different reaction space ; a plurality of bottom metal, disposed in said plurality of concave holes, and each of said concave holes has a metal bottom, wherein the bottom edge of the metal body is not in contact with the polishing pad to increase the close the electrical field intensity of the osmotic effect of the bottom edge of said metal, in response to said plurality of recesses interval evoked osmotic phenomena; a positive power supply lead for the positive electrode is electrically connected to a power supply unit; a power source and a negative electrode lead , a negative electrode electrically connected to a power supply unit; wherein the power supply positive lead and the negative electrode lead through the chassis and is connected alternately to the bottom of the plurality of metal.
  2. 2.根据权利要求1所述的抛光垫,其中在所述若干凹孔之间具有一细槽孔,以允许任两个相邻凹孔之间的电性与流体通连。 The polishing pad according to claim 1, wherein the slot has a small recess between the plurality of apertures to allow any two adjacent electrical and fluid communication between the recesses.
  3. 3.根据权利要求2所述的抛光垫,其中所述细槽孔的宽度比所述金属底部之宽度更窄。 3. The polishing pad according to claim 2, wherein said fine slot width than the width of the bottom of the narrower metal.
  4. 4.根据权利要求1所述的抛光垫,其中所述金属底部之边缘并不与所述抛光垫本体接触。 The polishing pad according to claim 1, wherein a bottom edge of the metal is not in contact with the body of the polishing pad.
  5. 5.根据权利要求1至4中之任一项所述的抛光垫,还包括一沟槽,并且所述沟槽内具有至少两个金属底部。 The polishing pad according to any one of claim 1 to 4, claims, further comprising a trench, said trench having a bottom and at least two metals.
  6. 6.根据权利要求5所述的抛光垫,其中所述若干凹孔以大体上与所述沟槽之延伸方向平行之方向而排列成一凹孔列,并且所述凹孔列与所述沟槽彼此平行并且间隔地设置于所述抛光垫上。 The polishing pad according to claim 5, wherein a direction of said plurality of parallel recesses extending substantially in the direction of the groove recesses are arranged in a row, and the row with the groove recesses arranged parallel to one another and spaced apart in said polishing pad.
  7. 7.根据权利要求5所述的抛光垫,其中所述若干凹孔与所述沟槽之间还包括一沟渠,以允许所述若干凹孔与所述沟槽之间的电性与流体通连。 The polishing pad according to claim 5, wherein said plurality of recesses and between said trench further comprises a trench, and to allow electrical conduction between the plurality of fluid recesses and the groove even.
  8. 8.根据权利要求7所述的抛光垫,其中所述沟渠之宽度比所述金属底部之宽度更窄。 8. The polishing pad according to claim 7, wherein a width of the trench is narrower than the width of the bottom of the metal.
  9. 9.一种电场辅助化学机械抛光系统,其包括: 一本体,其具有一工件固定部及一平台,所述工件固定部与所述平台间之垂直距离可加以调整,所述平台具有一驱动部,用以驱动所述平台转动; 一根据权利要求1至8中之任一项所述的抛光垫,其设于所述平台上; 一电源供应部,其具有一正极电源供应部及一负极电源供应部,所述正极电源供应部及所述负极电源供应部,分别地连接至所述抛光垫的所述电源正极导线及所述电源负极导线;以及一研磨液供应部,其用于将一研磨液分布于所述抛光垫上。 A field-assisted chemical mechanical polishing system, comprising: a body having a workpiece holding portion, and a platform, the workpiece and the vertical distance between the fixed portion of the platform may be adjusted, said platform having a driving unit for driving the rotation of said platform; a polishing pad according to claim any one of any one of claims 1 to 8, which is provided on the platform; a power supply unit, having a positive electrode and a power supply unit negative power supply unit, the power supply portion of the positive electrode and the negative power supply unit, connected respectively to the positive power supply of the polishing pad and the negative power supply lead wire; and a polishing liquid supply portion for the distribution of a polishing liquid to the polishing pad.
  10. 10.一种电场辅助化学机械抛光方法,其包括下列步骤: [1]准备步骤:准备一根据权利要求9所述之电辅助化学机械抛光系统,并且将一研磨液提供至所述抛光垫上; [2]电渗透及电化学反应步骤:将一预定加工对象之一预定加工层,与所述电辅助化学机械抛光系统之所述抛光垫的抛光垫本体接触,并将所述预定加工层浸于所述研磨液中,同时在藉由所述电辅助化学机械抛光系统之所述电源供应部进行供电后,将会产生电渗透现象及电化学反应,以使得研磨液于所述抛光垫本体上循环,并使得所述预定加工层部份被移除; [3]钝化反应步骤:所述预定加工层在电化学反应之移除过程中,其表面会逐渐生成一钝化层; [4]机械研磨步骤:利用所述抛光垫之转动来带动所述研磨液,以对已生成所述钝化层之预定加工层进行机械研磨作用;以及[5]完成步骤:在反复进行 A field-assisted chemical mechanical polishing method, comprising the steps of: [1] Preparation steps of: preparing a according to claim 9 of electrically assisted chemical mechanical polishing system, and provides a polishing liquid to the polishing pad; [2] the step of electro-osmosis and electrochemical reactions: the predetermined processing layer, the electrically assisted chemical-mechanical polishing system of a predetermined one of the object of the polishing pad in contact with a polishing pad body, and said predetermined processing layer dip in said polishing solution, while after the power supply portion by the auxiliary electric power supply of the chemical mechanical polishing system will generate an electro-osmotic phenomena and electrochemical reactions, so that the polishing liquid on the polishing pad body on the circulation, and such that said predetermined machining layer partially removed; [3] the passivation reaction steps: said predetermined working layer during removal of electrochemical reaction, the surface will gradually generate a passivation layer; [ 4] mechanical polishing step of: using the polishing pad to drive the rotation of the polishing liquid, to mechanical milling action generated on the passivation layer of a predetermined processing layer; and [5] to complete the steps of: repeating 述电渗透及电化学反应步骤、所述钝化反应步骤以及所述机械研磨步骤后,使得所述预定加工层之表面被加以平坦化。 Electro-osmosis and electrochemical later reaction step, the reaction step and the passivation mechanical polishing step, such that the predetermined surface of the working layer is planarized.
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CN201026589Y (en) * 2006-12-31 2008-02-27 广东工业大学 Magnetorheological device for grinding and polishing plane surface
CN101716745A (en) * 2009-11-09 2010-06-02 清华大学 Device and method for polishing sapphire substrate material by ultrasound assisted chemical machinery

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