CN103165765A - Light emitting diode manufacturing method - Google Patents

Light emitting diode manufacturing method Download PDF

Info

Publication number
CN103165765A
CN103165765A CN201110423658XA CN201110423658A CN103165765A CN 103165765 A CN103165765 A CN 103165765A CN 201110423658X A CN201110423658X A CN 201110423658XA CN 201110423658 A CN201110423658 A CN 201110423658A CN 103165765 A CN103165765 A CN 103165765A
Authority
CN
China
Prior art keywords
light emitting
substrate
emitting diode
package
baffle
Prior art date
Application number
CN201110423658XA
Other languages
Chinese (zh)
Inventor
陈立翔
陈滨全
Original Assignee
展晶科技(深圳)有限公司
荣创能源科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 展晶科技(深圳)有限公司, 荣创能源科技股份有限公司 filed Critical 展晶科技(深圳)有限公司
Priority to CN201110423658XA priority Critical patent/CN103165765A/en
Publication of CN103165765A publication Critical patent/CN103165765A/en

Links

Abstract

The invention discloses a light emitting diode manufacturing method which comprise the following steps: a substrate is provided, and a pair of electrodes is formed on the substrate; an illuminating chip is arranged on the substrate, and two poles of the illuminating chip are respectively electrically connected with the pair of electrodes; a baffle plate is provided, a groove is formed in the baffle plate, the baffle plate is placed on the substrate, the illuminating chip is contained in the groove and the baffle plate surrounds the illuminating chip; an encapsulation body is formed on the illuminating chip, the bottom portion of the encapsulation body is contained in the groove, and the top portion of the encapsulation body protrudes out of the top surface of the baffle plate; and a plasma generator is provided, the plasma generator is arrange on one side of the top surface of the baffle plate, the plasma generator ejects plasma beams to the top portion, protruding out of the baffle plate, of the encapsulation body along the direction parallel to the substrate, and the plasma beams carry out dry corrosion on the top portion of the encapsulation body until a plane light emitting surface is formed on the top portion of the encapsulation body.

Description

发光二极管制造方法 A method of manufacturing a light emitting diode

技术领域 FIELD

[0001] 本发明涉及半导体照明领域,特别是指一种发光二极管制造方法。 [0001] The present invention relates to semiconductor lighting, particularly to a method for manufacturing a light emitting diode.

背景技术 Background technique

[0002] 作为一种新兴光源,发光二极管凭借其发光效率高、体积小、重量轻、环保等优点而被广泛地应用到当前各个照明领域当中,大有取代传统光源之趋势。 [0002] as a new light source, a light emitting diode with high emission efficiency, small size, light weight, environmental protection and the advantages which are currently widely used in various lighting, trend to replace the conventional light sources.

[0003] 发光二极管通常包括基板、设于基板上的发光芯片及封装于该发光芯片上的透明封装体。 [0003] The light emitting diode generally includes a substrate, a light emitting chip disposed on the package and a light emitting chip on a substrate a transparent package. 该封装体用于保护发光芯片及改变发光芯片的光场分布。 The package body to protect the light emitting chip and the optical field distribution changes the light emitting chip. 现有的用于制造该发光二极管的方法中,该封装体是通过在发光芯片上点胶,待胶液固化后形成。 A method for manufacturing the conventional light emitting diode, after the formation of the package by glue on the light emitting chip, to be cured glue. 然而,这种封装体的形成方法由于受点胶量不稳定及点胶后胶滴的形状无法控制等诸多因素的影响,使得所形成的封装体表面为不规整的凸状结构,进而使所制得的发光二极管的色度图(chromaticity diagram, CIE)分布不一致,影响发光二极管的生产良率。 However, the method of forming such a package due to the effects of instability and the amount of dispensing droplets of glue dispensing shape and many other factors can not be controlled, so that the package is formed on the surface irregularities of the convex structure, and thus make the the resulting light emitting diode chromaticity diagram (chromaticity diagram, CIE) inconsistent distribution, affect the production yield of the light emitting diode.

发明内容 SUMMARY

[0004] 因此,实有必要提供一种可提高发光二极管的生产良率的发光二极管制造方法。 [0004] Accordingly, there is a need to provide a method of manufacturing a light emitting diode capable of improving the production yield of the light emitting diode.

[0005] 一种发光二极管制造方法,包括以下步骤: [0005] A light emitting diode manufacturing method, comprising the steps of:

提供一基板,于该基板上形成至少一对电极; Providing a substrate, forming at least a pair of electrodes on the substrate;

于该基板上设置至少一发光芯片,使该至少一发光芯片的两极分别于该至少一对电极电连接; At least one light-emitting chip, so that the poles at least one of the light emitting chip respectively electrically connected to the at least one pair of electrodes on the substrate;

提供一挡板,该挡板上设有至少一凹槽,将该挡板安放于该基板上,使该至少一发光芯片收容于该至少一凹槽中,该挡板包围于每一发光芯片周围; Providing a baffle, provided with at least one groove, the baffle mounted on the substrate so that the at least one light emitting chip housed in the at least one recess, which surrounds the baffle to each light-emitting chip on the shutter around;

于该至少一发光芯片上形成一封装体,该封装体的底部收容于该至少一凹槽中,该封装体的顶部凸出于该挡板的顶面; The at least one light-emitting chip is formed on a package, the bottom of the package is received in the at least one groove in the top of the package body protrudes top surface of the baffle;

提供一等离子产生器,将该等离子产生器设置于该挡板的顶面的一侧,该等离子产生器沿平行于该基板的方向向该封装体凸出该挡板的顶部喷射等离子束,该等离子束对该封装体的顶部进行干蚀直至该封装体的顶部形成平面状的出光面。 Providing a plasma generator, the plasma-generating side is disposed on the top surface of the baffle, the plasma is generated along a direction parallel to the substrate to the package top projection of the shutter plasma beam injection, the plasma beam dry etching until the top of the package body is formed in the planar top surface of the package.

[0006] 本发明中发光二极管制造方法中,该封装体的底部由档板的凹槽限定形状从而与该凹槽的形状相同,该封装体的顶部采用等离子束干蚀的方法进处理,以形成一平整的出光面,从而使所制得的发光二极管的封装体均为统一规整的结构,避免了因封装体的结构不规整而造成的发光二极管的色度图分布不一致,从而极大地提高了发光二极管的生产良率。 [0006] In the present invention, a method of manufacturing a light emitting diode, the bottom of the package defined by the groove shape to baffle the same shape as the groove, the top of the package body using a dry etching method such as ion beam into the process to forming a flat exit surface, so that the obtained light emitting diode package are uniform regular structure, avoids the chromaticity diagram of light emitting diode package structure due to the irregular and inconsistent distribution caused, thereby greatly enhancing the the production yield of the light emitting diode.

[0007] 下面参照附图,结合具体实施例对本发明作进一步的描述。 [0007] The following embodiments in conjunction with specific embodiments of the present invention will be further described with reference to the drawings.

附图说明 BRIEF DESCRIPTION

[0008] 图1为本发明一实施例中的发光二极管制造方法的过程图。 [0008] The process of FIG. 1 illustrating a method of manufacturing a light emitting diode of the present embodiment is an embodiment of the invention.

[0009] 图2示出了图1中的发光二极管制造方法的第一个步骤。 [0009] FIG. 2 shows a first step of a method of manufacturing a light emitting diode in FIG. [0010] 图3示出了图1中的发光二极管制造方法的第二个步骤。 [0010] FIG. 3 illustrates a second step of the method for manufacturing a light emitting diode in FIG.

[0011] 图4至图5示出了图1中的发光二极管制造方法的第三个步骤。 [0011] Figures 4 to 5 illustrate in FIG. 1 the third step of the method of manufacturing a light emitting diode.

[0012] 图6示出了图1中的发光二极管制造方法的第四个步骤。 [0012] FIG. 6 shows a fourth step of the method for manufacturing a light emitting diode in FIG.

[0013] 图7至图8示出了图1中的发光二极管制造方法的第五个步骤。 [0013] FIG. 7 to FIG. 8 shows a fifth step of the method for manufacturing a light emitting diode in FIG.

[0014] 图9示出了图1中的发光二极管制造方法的第六个步骤。 [0014] FIG. 9 shows a sixth step of the method of manufacturing a light emitting diode 1 in FIG.

[0015] 图10示出了图1中的发光二极管制造方法的第七个步骤。 [0015] FIG. 10 shows a seventh step in the method of manufacturing a light emitting diode of FIG.

[0016] 主要元件符号说明 [0016] Main reference numerals DESCRIPTION

Figure CN103165765AD00041

如下具体实施方式将结合上述附图进一步说明本发明。 The following detailed description in conjunction with the accompanying drawings, the present invention is described.

具体实施方式 Detailed ways

[0017] 请参阅图1,所示为本发明一实施例中的发光二极管制造方法的各个步骤,该发光二极管制造方法主要包括Sf S7七个步骤,具体如下文所述。 [0017] Referring to FIG. 1, the respective steps of a method embodiment for manufacturing a light emitting diode embodiment of the present invention is shown, the light emitting diode manufacturing method mainly includes seven steps Sf S7, specifically described below.

[0018] 步骤SI如图2所示,提供一块基板10,该基板10由塑料或其他适合的材料所制成,其具有一呈平板状的矩形构造,于该基板10上设置若干成对电极11。 [0018] Step SI 2, there is provided a substrate 10, the substrate 10 is made of plastic or other suitable material having a rectangular configuration of a flat plate shape, a plurality of pairs of electrodes disposed on the substrate 10 11.

[0019] 步骤S2如图3所示,于该基板10上安装若干发光芯片12,这些发光芯片12的材料可根据实际的发光需求进行选择,比如发红光的GaAsP,发黄光的InGaAlP,发蓝光的GaN,发绿光的GaP等等。 [0019] Step S2 in FIG. 3, a plurality of the light emitting chip 12 is mounted on the substrate 10, the material of the light emitting chip 12 may be selected according to the actual needs of emission, such as red-emitting GaAsP, an InGaAlP yellow light, blue-emitting GaN, GaP emitting green light and the like. 所述发光芯片12于该基板10上呈阵列排列,每一发光芯片12对应一对电极11,每一发光芯片12的正负极分别与对应的一对电极11电连接,本实施例中,该发光芯片12通过倒装方式使其正负极分别与对应的电极11电连接。 The light emitting chip 12 arranged in an array on the substrate 10, each light emitting chip 12 corresponds to a pair of electrodes 11, each of the positive and negative light emitting chip 12 are connected to a pair of electrical corresponding electrode 11, in this embodiment, the light emitting chip 12 so that positive and negative electrodes are electrically connected to the corresponding electrodes 11 by flip-chip. 现有技术中,共晶及打线的方式也同样适合本发明发光芯片的安装。 In the prior art, and the eutectic wire manner also suitable mounting a light emitting chip of the invention.

[0020] 步骤S3如图4及图5所示,提供一挡板20,该挡板20由塑料或其他适合的材料所制成,其具有一呈平板状的矩形构造,该挡板20上设有若干凹槽21,所述凹槽均为矩形且呈阵列状排列,每一凹槽21正对该基板10上的一发光芯片12,该凹槽21的尺寸大于该发光芯片12的尺寸。 [0020] Step S3 in FIG. 4 and FIG. 5, there is provided a shutter 20, the shutter 20 is made of plastic or other suitable material, having a rectangular flat plate-like configuration, the shutter 20 on a plurality of recesses 21, the recesses are rectangular and arranged in an array, each groove 21 a of the n light emitting chip 12 on the substrate 10, the size of the recess 21 is larger than the size of the light emitting chip 12 . 将该挡板20安装于该基板10上,每一发光芯片12收容于对应的一凹槽21中,该挡板20包围于每一发光芯片12周围,使相邻的发光芯片12相互间隔开来。 The shutter 20 is mounted on the substrate 10, each light emitting chip 12 received in a corresponding recess 21, around the barrier 20 surrounds each of the light emitting chip 12 of the adjacent light emitting chips 12 are spaced apart Come.

[0021] 步骤S4如图6所示,于每一发光芯片12上形成一封装体13,该封装体13为环氧树脂或硅胶,也可同时于该封装体中掺入荧光粉,此时该封装体13相对于该基板10的高度大于该挡板20的厚度,该封装体13的底部刚好收容于该挡板20的凹槽21中,顶部凸出于该挡板20的上表面,本实施例中,该封装体13通过点胶的方式形成,该封装体13的顶部为一凸状面。 [0021] Step S4 in FIG. 6, a package body 13 is formed on each of the light emitting chip 12, the package 13 of epoxy or silicone, can also be incorporated in the phosphor package, in which case the package body 13 with respect to the height of the substrate 10 is greater than the thickness of the shutter 20, the bottom of the package body 13 is just received in the recess 21 of the flap 20, protruding from the top of the upper surface of the baffle 20, in this embodiment, formed by way of the dispensing package 13, the top of the package body 13 is a convex surface. [0022] 步骤S5如图7及图8所示,提供一等离子产生器30对该封装体13的顶部进行干蚀。 [0022] Step S5 in FIG. 7 and FIG. 8, there is provided a plasma generator 30 at the top of the package 13 is subjected to dry etching. 该等离子产生器30的工作原理是以压缩气体为工作气体,以高温高速的等离子弧为热源将该封装体13的顶部熔化,同时用高速气流将已熔化的部分吹走,从而在该封装体13的顶部形成光洁出光面131。 Working principle of the plasma generator 30 is the compressed gas as a working gas, high temperature and high heat of the plasma arc 13 melts the top of the package, while the high-speed air stream blown to the melted portion, so that the package 13 smooth out the top surface 131 is formed. 本实施例中,该工作气体为空气,实际应用时,可以根据该封装体13的具体材质选择工作气体为氩、氢、氮、氧及其混合气体等。 In this embodiment, the working gas is air, the actual application may be argon, hydrogen, nitrogen, oxygen, and mixed gas, etc. The particular choice of material 13 of the package body work gas.

[0023] 该等离子产生器30设置于该挡板20的顶面22的一侧且位于其一侧边的外侧,该等离子产生器30沿平行于该基板10的方向向该封装体13凸出该挡板20的顶部喷射等离子束31,该等离子束对该封装体13的顶部进行干蚀直至该封装体13的顶部形成平面状的出光面131。 [0023] The plasma generator 30 is provided at one side of the top surface 22 of the flap 20 and is positioned outside one side of the plasma generator 30 in a direction parallel to the projecting direction of the package 13 to the substrate 10 the top flap 20 of the ion beam injection or the like 31, the plasma dry etching of the top beam 13 of the package until the package is formed out of planar surface 131 of the top 13.

[0024] 步骤S6如图9所示,将该挡板20从该基板10上移除,该挡板20移除后,相邻的封装体13之间形成相互贯通的通道14。 [0024] As shown in step S6 in FIG. 9, the shutter 20 is removed from the substrate 10, after removing the baffle plate 20, through passage 14 is formed between each adjacent package 13.

[0025] 步骤S7如图10所示,沿相邻两封装体13之间的通道14对该基板10进行切割,使其分成多个独立的发光二极管100。 [0025] As shown in step S7, the channel 13 between the two adjacent packages 10 14 along the substrate 10 is cut, it is divided into a plurality of separate light emitting diode 100.

[0026] 上述发光二极管制造方法中,该封装体12的底部由档板20的凹槽21限定形状从而与该凹槽21的形状相同,该封装体13的顶部采用等离子束干蚀的方法进处理,以形成一平整的出光面131,从而使所制得的发光二极管100的封装体13均为统一规整的结构,避免了因封装体13的结构不规整而造成的发光二极管100的色度图分布不一致,从而极大地提高了发光二极管100的生产良率。 [0026] The method for producing a light emitting diode, the bottom of the package 12 defined by the recess 21 of the baffle 20 above the same shape to the shape of the recess 21, the top of the package body 13 using a dry etching method such as ion beams into process to form a planar light exit surface 131, so that the light emitting diode package 100 made of regular structures 13 are uniform, avoiding the chromaticity LED package structure 13 because of irregularities caused 100 FIG inconsistent distribution, thereby greatly improving the production yield of the light emitting diode 100.

Claims (10)

1.一种发光二极管制造方法,包括以下步骤: 提供一基板,于该基板上形成至少一对电极; 于该基板上设置至少一发光芯片,使该至少一发光芯片的两极分别与该至少一对电极电连接; 提供一挡板,该挡板上设有至少一凹槽,将该挡板安放于该基板上,使该至少一发光芯片收容于该至少一凹槽中,该挡板包围于该至少一发光芯片周围; 于该至少一发光芯片上形成一封装体,该封装体的底部收容于该至少一凹槽中,该封装体的顶部凸出于该挡板的顶面; 提供一等离子产生器,将该等离子产生器设置于该挡板的顶面的一侧,该等离子产生器沿平行于该基板的方向向该封装体凸出该挡板的顶部喷射等离子束,该等离子束对该封装体的顶部进行干蚀直至该封装体的顶部形成平面状的出光面。 A light emitting diode manufacturing method, comprising the steps of: providing a substrate, forming at least a pair of electrodes on the substrate; at least one light emitting chip disposed on the substrate, such that the at least one light emitting chip poles respectively the at least one electrically connected to the electrode; providing a baffle provided with at least one groove on the shutter, the shutter mounted on the substrate, the at least one light-emitting chip received in the at least one recess, which surrounds the baffle at least a periphery of the light emitting chip; a package body is formed on the at least one light emitting chip, the bottom of the package is received in the at least one groove in the top of the package is projected to the top surface of the baffle; providing a plasma generator, the plasma generating side is provided at a top surface of the baffle, the plasma is generated in a direction parallel to the substrate along a package top projection of the baffle jet plasma beam, plasma beam dry etching until the top of the package body is formed in the planar top surface of the package.
2.如权利要求1所述的发光二极管制造方法,其特征在于:还包括一将挡板从该基板上移除的步骤。 The light emitting diode manufacturing method according to claim 1, characterized in that: further comprising a step of removing the shutter from over the substrate.
3.如权利要求1或2所述的发光二极管制造方法,其特征在于:该至少一对电极包括多对,该至少一发光芯片为多个且呈阵列状排列,该至少一凹槽为多个且呈阵列排列,每一凹槽对应一发光芯片。 The light emitting diode manufacturing method of claim 1 or claim 2, wherein: the at least one pair of electrodes comprises a plurality of pairs, at least one of the plurality of the light emitting chip and arranged in an array, the at least one recess is a plurality and one arranged in an array, each groove corresponding to a light emitting chip.
4.如权利要求4所述的发光二极管的制造方法,其特征在于:还包括一切割的步骤,从相邻两封装体之间处对该基板进行切割形成独立发光二极管。 The method of manufacturing a light emitting diode according to claim 4, characterized in that: further comprising a step of cutting, the substrate was cut to form the separate light emitting diodes between the two adjacent packages.
5.如权利要求1所述的发光二极管制造方法,其特征在于:该封装体由点胶的方式形成,该封装体的底部与凹槽的形状相同。 The light emitting diode manufacturing method according to claim 1, wherein: the package body is formed by dispensing a manner, the same shape as the bottom of the recess of the package body.
6.如权利要求5所述的发光二极管制造方法,其特征在于:该封装体的材料为透明环氧树脂或硅胶。 The fabrication method as claimed in claim 5, characterized in that: the material of the package is a transparent epoxy or silicone.
7.如权利要求所述的发光二极管制造方法,其特征在于:该封装体中含有荧光粉。 The light emitting diode manufacturing method according to claim, wherein: the package containing the phosphor.
8.如权利要求1所述的发光二极管制造方法,其特征在于:该挡板由塑料制成。 The method of manufacturing the light emitting diode as claimed in claim 1, wherein: the shutter is made of plastic.
9.如权利要求1所述的发光二极管制造方法,其特征在于:该至少一凹槽的尺寸大于该至少一发光芯片的尺寸。 The method of manufacturing the light emitting diode as claimed in claim 1, wherein: the at least one dimension larger than the size of the recess at least one light emitting chip.
10.如权利要求1所述的发光二极管制造方法,其特征在于:该封装体相对于该基板的高度大于该挡板的厚度。 10. The method of manufacturing a light emitting diode according to claim 1, wherein: the height of the package with respect to the substrate is greater than the thickness of the baffle.
CN201110423658XA 2011-12-17 2011-12-17 Light emitting diode manufacturing method CN103165765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110423658XA CN103165765A (en) 2011-12-17 2011-12-17 Light emitting diode manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201110423658XA CN103165765A (en) 2011-12-17 2011-12-17 Light emitting diode manufacturing method
TW100147072A TWI466333B (en) 2011-12-17 2011-12-19 A method of manufacturing led

Publications (1)

Publication Number Publication Date
CN103165765A true CN103165765A (en) 2013-06-19

Family

ID=48588687

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110423658XA CN103165765A (en) 2011-12-17 2011-12-17 Light emitting diode manufacturing method

Country Status (2)

Country Link
CN (1) CN103165765A (en)
TW (1) TWI466333B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104425672A (en) * 2013-08-23 2015-03-18 展晶科技(深圳)有限公司 Method for manufacturing light emitting diode

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6451628B1 (en) * 1997-12-25 2002-09-17 Sanyo Electric Co., Ltd. Method fabricating a semiconductor device with a decreased mounting area
EP1659641A1 (en) * 2004-11-23 2006-05-24 Centro Ricerche Plast-Optica S.r.l. Process for manufacturing light emitting devices and device thereof
CN101278415A (en) * 2005-08-26 2008-10-01 首尔半导体株式会社 Manufacturing method of light emitting diode
KR100877221B1 (en) * 2007-03-12 2009-01-09 (주) 아모엘이디 Method of manufacturing semiconductor package
US20090236686A1 (en) * 2006-04-19 2009-09-24 Stats Chippac, Ltd. Semiconductor Device and Method of Forming UBM Fixed Relative to Interconnect Structure for Alignment of Semiconductor Die
CN101550334A (en) * 2009-05-12 2009-10-07 奇瑞汽车股份有限公司 Fluorescent powder coating method of white light-emitting diode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2851589B2 (en) * 1996-08-15 1999-01-27 日本レック株式会社 The method of manufacturing optoelectronic components
US6642652B2 (en) * 2001-06-11 2003-11-04 Lumileds Lighting U.S., Llc Phosphor-converted light emitting device
US20110062482A1 (en) * 2010-01-20 2011-03-17 Bridgelux, Inc. Apparatus And Method For Enhancing Connectability In LED Array Using Metal Traces

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6451628B1 (en) * 1997-12-25 2002-09-17 Sanyo Electric Co., Ltd. Method fabricating a semiconductor device with a decreased mounting area
EP1659641A1 (en) * 2004-11-23 2006-05-24 Centro Ricerche Plast-Optica S.r.l. Process for manufacturing light emitting devices and device thereof
CN101278415A (en) * 2005-08-26 2008-10-01 首尔半导体株式会社 Manufacturing method of light emitting diode
US20090236686A1 (en) * 2006-04-19 2009-09-24 Stats Chippac, Ltd. Semiconductor Device and Method of Forming UBM Fixed Relative to Interconnect Structure for Alignment of Semiconductor Die
KR100877221B1 (en) * 2007-03-12 2009-01-09 (주) 아모엘이디 Method of manufacturing semiconductor package
CN101550334A (en) * 2009-05-12 2009-10-07 奇瑞汽车股份有限公司 Fluorescent powder coating method of white light-emitting diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104425672A (en) * 2013-08-23 2015-03-18 展晶科技(深圳)有限公司 Method for manufacturing light emitting diode

Also Published As

Publication number Publication date
TWI466333B (en) 2014-12-21
TW201327921A (en) 2013-07-01

Similar Documents

Publication Publication Date Title
US8916898B2 (en) Wafer level LED package and method of fabricating the same
US8866166B2 (en) Solid state lighting device
US20090140633A1 (en) Light-emitting module, and display unit and lighting unit using the same
CN103222073B (en) LED chip, the LED package structure and a method for forming the above-described
CN100379044C (en) Generation method of whitelight source, whitelight luminous element and its manufacturing method
US8436378B2 (en) Semiconductor light emitting device and method for manufacturing same
CN102270722B (en) Semiconductor light emitting device
US9754926B2 (en) Light emitting diode (LED) arrays including direct die attach and related assemblies
CN100440555C (en) Light-emitting device and method for manufacturing same
US7994531B2 (en) White-light light emitting diode chips and fabrication methods thereof
US10270021B2 (en) Light emitting device package and ultraviolet lamp having the same
EP2642535B1 (en) Semiconductor light emitting device and method for manufacturing the same
JP2005203748A (en) Light emitting device and manufacturing method thereof
JP2005093970A (en) Light-emitting device
US20080258162A1 (en) Package for a high-power light emitting diode
WO2006121196A1 (en) Led with a phosphor layer having different thikness or different phosphor concentration
CN1871714A (en) Semiconductor device for emitting light and method for fabricating the same
CN103094269A (en) White light luminescent device and manufacturing method thereof
US9153749B2 (en) Light emitting device package and lighting device with the same
JP2007227919A (en) Process for fabrication of light-emitting diode package
KR101129519B1 (en) Semiconductor light-emitting device
EP2738825B1 (en) Light-emitting device
US20100079997A1 (en) Light-emitting module and mounting board used therefor
WO2008056813A1 (en) Light emitting device and method for manufacturing the same
CN102011952A (en) Method for making LED (Light Emitting Diode) light resource module and product made by the method

Legal Events

Date Code Title Description
C06 Publication
C10 Entry into substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)