CN103151280B - Connection method of gold wire and copper foil - Google Patents

Connection method of gold wire and copper foil Download PDF

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Publication number
CN103151280B
CN103151280B CN201310076360.5A CN201310076360A CN103151280B CN 103151280 B CN103151280 B CN 103151280B CN 201310076360 A CN201310076360 A CN 201310076360A CN 103151280 B CN103151280 B CN 103151280B
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copper foil
gold
step
copper
gold wire
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CN201310076360.5A
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Chinese (zh)
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CN103151280A (en
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张鹏
栾冬
王春雨
陈刚
杜海
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哈尔滨工业大学(威海)
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48647Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • H01L2224/854Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85447Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/157Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747Copper [Cu] as principal constituent

Abstract

一种金丝与铜箔的连接方法,包括下述步骤:先将铜箔片待连接表面进行合适的处理;清洗加热台并加热到合适温度;清洗移动工作台,并将金丝缠绕固定在移动工作台侧面的转动卷轴上,再将金丝一端穿过转动卷轴下面带有中心孔的针头,然后将金丝裸露端部点火烧制成球状;将处理后的铜箔片放置于加热台上并固定,保持合适时间;将移动工作台下移至针头底端金丝球与铜箔表面接触,然后移动工作台施力下压,并同时进行前后或左右振动;将移动工作台上移合适位置后,剪断金丝,完成金丝与铜箔的连接,然后取出连接部件。 A method of connecting a copper foil with gold wire, comprising the steps of: first copper foil surface to be connected to be a suitable treatment; cleaning heating stage and heated to a suitable temperature; cleaning moving table, and wrapped in gold is fixed the rotational movement of the reel table side, and then gold following the needle end through rotation of the reel with a center hole, and then the gold wire is made of fire exposed end point of spherical; the treated copper foil is placed on the heating stage and secured, maintaining a suitable time; moving the bottom end of the needle moves to a workbench gold ball in contact with the copper foil surface, and then moving the stage under the pressure force, and about the same time or before and after the vibration; moving the work table shift after the proper position to cut the gold wire, to complete the connection of the gold wire and the copper foil, and then remove the connection member. 本发明工艺操作简便、成本低、连接效果好,为金丝与铜箔连接开辟了新的途径。 The inventive process is simple, low cost and good effect is connected, opens up new avenues for gold and copper foil.

Description

一种金丝与铜箔的连接方法 One kind of method of connecting a copper foil with gold

技术领域 FIELD

[0001] 本发明涉及材料加工技术领域中金属间的连接方法,尤其涉及一种金丝与铜箔的连接方法。 [0001] The present invention relates to the field of material processing method for connecting a metal, in particular, it relates to a method of connecting a copper foil with gold wire.

背景技术 Background technique

[0002] 集成电路及半导体器件向着封装多引线化、高集成度和小型化发展,对连接材料的技术指标要求越来越高。 [0002] The semiconductor integrated circuit device and toward a multi-pin package, high integration and miniaturization, more and more of the technical requirements of the connecting material. 目前,引线材料主要有金、铜等,由于金的使役性能最佳而被广泛应用;基板材料主要有铁镍合金、树脂或陶瓷覆铜等,由于基板引线密度需求提高,基板向短、轻、薄、高精细度、多引线、小节距的方向发展,厚度需求相应减薄,已从0.25mm减至0.08-0.1mm。 Currently, lead material mainly gold, copper or the like, since the optimum performance of gold causative been widely used; substrate materials are iron-nickel alloy, copper and the like as resin or ceramic, a lead substrate due to increased density requirements, the substrate is short, light , thin, high fineness direction, multi-pin, small pitch, corresponding to the thickness of the thinned demand, reduced from 0.25mm 0.08-0.1mm. 铜箔较目前的基板材料具有高电阻率、高导热率、低成本等优点,但由于铜箔在空气中极易氧化,以及铜与金的原子扩散嵌合性能并不理想,采用真空状态下连接,工艺复杂且成本高,因此,需要行之有效的连接方法保证连接后部件的可靠性。 Than the current copper foil substrate material having a high resistivity, high thermal conductivity, low cost, etc., but the copper foil is easily oxidized in air, as well as the diffusion of copper and gold atoms is not fitted over the performance, using a vacuum connection process is complicated and costly, and therefore, needs an effective way to ensure the reliability of connection of the connection member.

发明内容 SUMMARY

[0003] 为了解决金丝与铜箔的可靠连接问题,本发明的目的在于提供一种金丝与铜箔的连接方法,实现金丝与铜箔的连接,以获得性能良好的连接部件,具有工艺操作简便、成本低、适合于推广应用的特点。 [0003] In order to solve the problem of a reliable connection gold wire and the copper foil, an object of the present invention is to provide a method of connecting a copper foil with gold, gold and the copper foil to realize the connection, in order to obtain good performance of the connecting member, having the process is simple, low cost, suitable for the characteristics of the application.

[0004] 本发明包括以下步骤: [0004] The present invention comprises the steps of:

[0005] 步骤一:将铜箔片待连接表面用质量浓度为5% -20%的盐酸进行清洗5-20分钟; [0005] Step a: a copper foil surface to be connected with the mass concentration of 5% to 20% hydrochloric acid was washed for 5-20 minutes;

[0006] 步骤二:用质量浓度为5% -10%的丙酮进行超声清洗10-20分钟,超声清洗频率为20-30KHZ,再用超纯水冲洗后,吹干,备用; [0006] Step Two: sonicated with mass concentration of 5% -10% acetone 10 to 20 minutes washing, ultrasonic cleaning frequency of 20-30 kHz, after then rinsed with ultrapure water, dried, standby;

[0007] 步骤三:清洗加热台,并将加热台加热至50_200°C,加热速度为5_20°C /分钟; [0007] Step Three: cleaning the heating stage, heating stage and heated to 50_200 ° C, heating rate 5_20 ° C / min;

[0008] 步骤四:清洗移动工作台,并将金丝缠绕固定在移动工作台侧面的转动卷轴上,金丝一端穿过转动卷轴下面带有中心孔的针头,然后将金丝裸露端部点火烧制成球状; [0008] Step Four: moving the cleaning table, and the gold is fixed on the winding spool rotatably movable table side, and the spool is rotated through the gold beneath the needle end with a center hole, and then the gold wire exposed end point fire pelletised;

[0009] 步骤五:将步骤二中处理后的铜箔片放置于加热台上并固定,保持时间3-5分钟; [0009] Step 5: After the processing in step two copper foil placed on a heating table and fixed, retention time 3-5 minutes;

[0010] 步骤六:将移动工作台下移至针头底端金丝球与铜箔表面接触,然后移动工作台施加180-240克力下压,并同时以180-210毫瓦的功率进行前后或左右振动,整个过程时间为170-200毫秒; [0010] Step Six: moving a workbench moved into contact with the bottom end of the needle gold ball copper foil surface, then applying pressure under the movable table 180-240 grams, while at 180-210 milliwatts of power before and after or about vibrations, the entire process time of 170-200 ms;

[0011] 步骤七:将移动工作台上移合适位置后,剪断金丝,完成金丝与铜箔的点连接,然后取出连接部件,也可将移动工作台水平移动合适位置后,重复步骤四后,剪断金丝,完成一个金丝与铜箔的线连接,然后取出连接部件。 [0011] Step 7: After the shifting movement of the table place, cut gold, gold and the copper foil to complete the connection point, and then remove the connecting member can also be moved horizontally moving table proper position, repeating steps four after cut gold, a gold wire connection is completed and the copper foil, and then remove the connection member.

[0012] 本发明中的铜箔材料可以是纯铜或铜合金。 [0012] The foil material of the present invention may be pure copper or a copper alloy.

[0013] 本发明中的铜箔可以是压延铜箔、电解铜箔或覆铜箔。 [0013] In the present invention, it may be rolled copper foil, electrolytic copper foil or a copper clad.

[0014] 本发明中的铜箔如采用压延铜箔,其表面压延流线的处理方式有两种:一、可以将待连接表面用1600-2000#金相砂纸打磨,然后进行步骤一至步骤七的操作;二、可以进行步骤一至步骤四的操作后,将步骤五中铜箔压延流线方向与移动工作台振动方向以45-90范围内的角度进行固定,然后再进行步骤六、步骤七的操作。 [0014] In the present invention uses copper foil as rolled copper foil, which surface treatment flow line calendering in two ways: First, the surface can be connected with a metallographic sandpaper # 1600-2000, followed by a step to step seven operation; Second, the steps may be performed to a fourth step, the fifth step of foil rolling vibration direction of flow direction moving table is fixed at an angle in the range of 45-90, and then to step six, seven step operation.

[0015] 本发明中的铜箔如采用电解铜箔,选择毛面作为连接表面时,其处理方式有两种:一、可以用质量浓度为20 %-30 %的盐酸进行清洗1-3分钟,然后进行步骤二至步骤七的操作;二、可以将待连接表面用1600-2000#金相砂纸打磨,然后进行步骤一至步骤七的操作。 [0015] In the present invention when the copper foil such as electrolytic copper foils, the matte side selected as the connection surface, which is treated in two ways: one, 1-3 minutes can be cleaned with a mass concentration of 20% -30% HCl , then steps two to seven step; two, can be connected with the surface # 1600-2000 metallographic sandpaper, and then follow steps 1 to seven.

[0016] 本发明中的铜箔如采用覆铜箔,可以是有机树脂覆铜箔、金属基覆铜箔、陶瓷基覆铜箔、聚酯基覆铜箔、聚酰亚胺基覆铜箔、电子玻纤布基覆铜箔或复合基覆铜箔等,其铜箔面的处理方式按照所采用的是压延铜箔或电解铜箔进行处理。 [0016] In the present invention employ copper as a copper clad, copper clad may be an organic resin, a metal-based copper-clad, copper clad ceramic-based, polyester-based copper clad, copper clad polyimide-based electronic copper clad fiberglass cloth or the like copper clad composite substrate, it is processed in accordance with the surface of the copper foil used is an electrolytic copper foil or rolled copper foil is processed.

[0017] 本发明方法工艺操作简便、成本低、使金丝与铜箔连接失效率降低,提高了合格品率,为金丝与铜箔连接开辟了新的途径,可以应用于封装技术领域中金与铜的芯片键合,也可应用于其他领域中金与铜的异种金属部件互连,具有很好的社会效益和经济效益。 [0017] The process of the invention the method is simple, low cost, and the gold wire connected to the copper foil to reduce the failure rate, improve the rate of qualified products, has opened up new avenues for gold and copper foil, may be applied to packaging art gold and copper die bonding, and gold may be applied to the dissimilar metal member of copper interconnects other areas, has good social and economic benefits.

附图说明 BRIEF DESCRIPTION

[0018] 图1为本发明中发备工作示意图 [0018] Preparation 1 of the present invention, a schematic view of the work in FIG hair

[0019] 图中: [0019] In the drawings:

[0020] I加热台 [0020] I the heating stage

[0021] 2铜箔片 [0021] the copper foil 2

[0022] 3 针头 [0022] The needle 3

[0023] 4转动卷轴 [0023] The spool 4 rotates

[0024] 5移动工作台 [0024] The movable stage 5

具体实施方式 Detailed ways

[0025] 具体实施方式一 [0025] DETAILED an embodiment

[0026] 下面结合图1说明本实施方式,本实施方式包括以下步骤: [0026] FIG. 1 explained below with reference to the present embodiment, the present embodiment comprises the steps of:

[0027] 步骤一:将尺寸为10X10X0.08mm的压延纯铜箔片待连接表面用质量浓度为15%的盐酸进行清洗10分钟; 10 minutes wash size 10X10X0.08mm rolled sheet of pure copper surfaces to be joined with a mass concentration of 15% hydrochloric acid;: [0027] Step a

[0028] 步骤二:用质量浓度为10%的丙酮进行超声清洗10分钟,超声清洗频率为20KHz,再用超纯水冲洗后,吹干,备用; [0028] Step II: 10% acetone for 10 minutes ultrasonic washing mass concentration, ultrasonic cleaning frequency of 20KHz, and then after rinsing with ultrapure water, dried, standby;

[0029] 步骤三:清洗加热台(I),并将加热台加热至50°C,加热速度为10°C /分钟; [0029] Step Three: Cleaning heating stage (I), and the heating stage was heated to 50 ° C, heating rate 10 ° C / min;

[0030] 步骤四:清洗移动工作台(5),并将直径为25um的金丝缠绕固定在移动工作台侧面的转动卷轴(4)上,金丝一端穿过转动卷轴下面带有中心孔的针头(3),然后将金丝裸露端部点火烧制成球状; [0030] Step Four: washing the movable table (5), and the gold wire having a diameter of 25um is wound on a moving stage side rotary spool (4), through the rotation of the reel following an end of the gold wire with a center hole the needle (3), and then the gold wire fire to the exposed end pelletised;

[0031] 步骤五:将步骤二中处理后的铜箔片放置于加热台(I)上并以压延流线方向与移动工作台(5)振动方向呈90度的角度固定,保持时间3分钟; [0031] Step 5: After the processing in step two copper foil is placed on a heated stage (I) and the direction of vibration and rolling flow direction moving table (5) fixed at an angle of 90 degrees, retention time 3 minutes ;

[0032] 步骤六:将移动工作台(5)下移至针头(3)底端的金丝球与铜箔表面接触,然后移动工作台(5)施加240克力下压,并同时以210毫瓦的功率进行前后或左右振动,整个过程时间为200晕秒; [0032] Step Six: Move Move the needle (3) in contact with the copper foil surface gold ball at the bottom end of the table (5), and the movable table (5) applying a pressure of 240 gf, and while 210 ml or before and after watts for about vibrations, the process time is 200 seconds halo;

[0033] 步骤七:将移动工作台(5)上移合适位置后,剪断金丝,完成金丝与铜箔的点连接,然后取出连接部件。 [0033] Step 7: the movable stage backward suitable location (5), cut gold wire, gold wire connected to the completion point of the copper foil, and then remove the connection member.

[0034] 本实施方式制得的连接部件,剪切测试强度为86.77MPa„ [0034] connection member prepared in the present embodiment, the shear test strength of 86.77MPa "

[0035] 具体实施方式二 [0035] DETAILED Second Embodiment

[0036] 下面结合图1说明本实施方式,本实施方式包括以下步骤: [0036] FIG. 1 explained below with reference to the present embodiment, the present embodiment comprises the steps of:

[0037] 步骤一:将尺寸为10X10X0.1mm的聚酰亚胺覆压延纯铜箔片待连接表面用1800#金相砂纸打磨; [0037] Step a: The size 10X10X0.1mm pure polyimide clad rolled copper foil surface to be connected with a metallographic sandpaper # 1800;

[0038] 步骤二:质量浓度为15%的盐酸进行清洗10分钟,然后用质量浓度为10%的丙酮进行超声清洗10分钟,超声清洗频率为20KHZ,再用超纯水冲洗后,吹干,备用; [0038] Step Two: mass concentration of 15% hydrochloric acid wash for 10 minutes, and then subjected to 10 minutes ultrasonic washing in acetone with 10% concentration, the frequency of 20KHZ ultrasonic cleaning, and then after rinsing with ultrapure water, drying, spare;

[0039] 步骤三:清洗加热台(I),并将加热台加热至150°C,加热速度为15°C /分钟; [0039] Step Three: Cleaning heating stage (I), and the heating stage was heated to 150 ° C, heating rate 15 ° C / min;

[0040] 步骤四:清洗移动工作台(5),并将直径为25um的金丝缠绕固定在移动工作台侧面的转动卷轴(4)上,金丝一端穿过转动卷轴下面带有中心孔的针头(3),然后将金丝裸露端部点火烧制成球状; [0040] Step Four: washing the movable table (5), and the gold wire having a diameter of 25um is wound on a moving stage side rotary spool (4), through the rotation of the reel following an end of the gold wire with a center hole the needle (3), and then the gold wire fire to the exposed end pelletised;

[0041] 步骤五:将步骤二中处理后的铜箔片放置于加热台(I)上并固定,保持时间4分钟; [0041] Step 5: After the processing in step two copper foil placed on a heating stage (I) and secured retention time of 4 min;

[0042] 步骤六:将移动工作台(5)下移至针头(3)底端的金丝球与铜箔表面接触,然后移动工作台(5)施加200克力下压,并同时以200毫瓦的功率进行前后或左右振动,整个过程时间为180晕秒; [0042] Step Six: Move Move the needle (3) in contact with the copper foil surface gold ball at the bottom end of the table (5), and the movable table (5) applying a pressure of 200 grams, while 200 mM or before and after watts for about vibrations, the process time is 180 seconds halo;

[0043] 步骤七:将移动工作台(5)上移合适位置后,剪断金丝,完成金丝与铜箔的点连接,然后取出连接部件。 [0043] Step 7: the movable stage backward suitable location (5), cut gold wire, gold wire connected to the completion point of the copper foil, and then remove the connection member.

[0044] 本实施方式制得的连接部件,剪切测试强度为41.17MPa„ [0044] connection member prepared in the present embodiment, the shear test strength of 41.17MPa "

[0045] 具体实施方式三 [0045] DETAILED DESCRIPTION three

[0046] 下面结合图1说明本实施方式,本实施方式包括以下步骤: [0046] FIG. 1 explained below with reference to the present embodiment, the present embodiment comprises the steps of:

[0047] 步骤一:将尺寸为10X10X0.05mm的电解黄铜箔片毛面用质量浓度为25%的盐酸进行清洗2分钟; [0047] Step one: yellow size 10X10X0.05mm electrodeposited copper foil with the rough surface of the mass concentration of 25% hydrochloric acid cleaning for 2 minutes;

[0048] 步骤二:质量浓度为10%的盐酸进行清洗15分钟,然后用质量浓度为10%的丙酮进行超声清洗10分钟,超声清洗频率为20KHZ,再用超纯水冲洗后,吹干,备用; [0048] Step Two: concentration of 10% hydrochloric acid was washed for 15 minutes, then 10% of the concentration of acetone by ultrasonic cleaning for 10 minutes, ultrasonic cleaning frequency of 20KHZ, and then after rinsing with ultrapure water, drying, spare;

[0049] 步骤三:清洗加热台(I),并将加热台加热至200°C,加热速度为20°C /分钟; [0049] Step Three: Cleaning heating stage (I), and the heating stage was heated to 200 ° C, heating rate 20 ° C / min;

[0050] 步骤四:清洗移动工作台(5),并将直径为25um的金丝缠绕固定在移动工作台侧面的转动卷轴(4)上,金丝一端穿过转动卷轴下面带有中心孔的针头(3),然后将金丝裸露端部点火烧制成球状; [0050] Step Four: washing the movable table (5), and the gold wire having a diameter of 25um is wound on a moving stage side rotary spool (4), through the rotation of the reel following an end of the gold wire with a center hole the needle (3), and then the gold wire fire to the exposed end pelletised;

[0051] 步骤五:将步骤二中处理后的铜箔片放置于加热台(I)上并固定,保持时间5分钟; [0051] Step 5: After the processing in step two copper foil placed on a heating stage (I) and fixed on the holding time of 5 minutes;

[0052] 步骤六:将移动工作台(5)下移至针头(3)底端的金丝球与铜箔表面接触,然后移动工作台(5)施加200克力下压,并同时以200毫瓦的功率进行前后或左右振动,整个过程时间为190晕秒; [0052] Step Six: Move Move the needle (3) in contact with the copper foil surface gold ball at the bottom end of the table (5), and the movable table (5) applying a pressure of 200 grams, while 200 mM or before and after watts for about vibrations, the process time is 190 seconds halo;

[0053] 步骤七:将移动工作台(5)上移合适位置后,剪断金丝,完成金丝与铜箔的点连接,然后取出连接部件。 [0053] Step 7: the movable stage backward suitable location (5), cut gold wire, gold wire connected to the completion point of the copper foil, and then remove the connection member.

[0054] 本实施方式制得的连接部件,剪切测试强度为138.3 IMPa„ [0054] The embodiment according to the present embodiment the connecting member is made, the shear test strength was 138.3 IMPa "

[0055] 具体实施方式四 [0055] DETAILED fourth embodiment

[0056] 下面结合图1说明本实施方式,本实施方式包括以下步骤: [0056] FIG. 1 explained below with reference to the present embodiment, the present embodiment comprises the steps of:

[0057] 步骤一:将尺寸为10X10X0.07mm的聚酰亚胺覆电解黄铜箔片待连接表面用质量浓度为15%的盐酸进行清洗10分钟; 10 minutes wash size 10X10X0.07mm yellow polyimide electrolytic copper foil clad surfaces to be joined with a mass concentration of 15% hydrochloric acid;: [0057] Step a

[0058] 步骤二:用质量浓度为10%的丙酮进行超声清洗10分钟,超声清洗频率为20KHz,再用超纯水冲洗后,吹干,备用; [0058] Step II: 10% acetone for 10 minutes ultrasonic washing mass concentration, ultrasonic cleaning frequency of 20KHz, and then after rinsing with ultrapure water, dried, standby;

[0059] 步骤三:清洗加热台(I),并将加热台加热至100°C,加热速度为20°C /分钟; [0059] Step Three: Cleaning heating stage (I), and the heating stage was heated to 100 ° C, heating rate 20 ° C / min;

[0060] 步骤四:清洗移动工作台(5),并将直径为25um的金丝缠绕固定在移动工作台侧面的转动卷轴(4)上,金丝一端穿过转动卷轴下面带有中心孔的针头(3),然后将金丝裸露端部点火烧制成球状; [0060] Step Four: washing the movable table (5), and the gold wire having a diameter of 25um is wound on a moving stage side rotary spool (4), through the rotation of the reel following an end of the gold wire with a center hole the needle (3), and then the gold wire fire to the exposed end pelletised;

[0061] 步骤五:将步骤二中处理后的铜箔片放置于加热台(I)上并固定,保持时间3分钟; [0061] Step 5: After the processing in step two copper foil placed on a heating stage (I) and secured, held for 3 min;

[0062] 步骤六:将移动工作台(5)下移至针头3底端的金丝球与铜箔表面接触,然后移动工作台(5)施加200克力下压,并同时以200毫瓦的功率进行前后或左右振动,整个过程时间为180毫秒; [0062] Step Six: the needle 3 moved to move the ball into contact with the bottom of the gold foil surface of the lower table (5), and the movable table (5) applying a pressure of 200 grams, and 200 mW while or about longitudinal vibration power in the entire process time is 180 ms;

[0063] 步骤七:将移动工作台(5)上移合适位置后,剪断金丝,完成金丝与铜箔的点连接,然后取出连接部件。 [0063] Step 7: the movable stage backward suitable location (5), cut gold wire, gold wire connected to the completion point of the copper foil, and then remove the connection member.

[0064] 本实施方式制得的连接部件,剪切测试强度为64.74MPa。 [0064] connection member prepared in the present embodiment, the shear strength was tested 64.74MPa.

[0065] 依据上述实施方式,本发明内容所述范围均能实施,制得性能良好的连接部件,本发明不仅仅局限于上述实施方式。 [0065] According to the above embodiment, the content of the scope of the invention could embodiment, good performance was obtained connecting member, the present invention is not limited to the above embodiments.

[0066] 本发明提供一种金丝与铜箔的连接方法,经实际测试证明,采用该方法所制得的连接部件性能良好,本发明具有操作工艺简便、成本低等显著的优点。 [0066] The present invention provides a gold wire and the copper foil connection method, the actual tested using this method obtained a good connection member performance, the process of the present invention is simple, low cost significant advantages.

Claims (6)

1.一种金丝与铜箔的连接方法,其特征在于:它包括以下步骤: 步骤一:将铜箔片待连接表面用质量浓度为5% -20%的盐酸进行清洗5-20分钟; 步骤二:用质量浓度为5% -10%的丙酮进行超声清洗10-20分钟,超声清洗频率为20-30KHZ,再用超纯水冲洗后,吹干,备用; 步骤三:清洗加热台(I),并将加热台加热至50-200°C,加热速度为5-20°C /分钟; 步骤四:清洗移动工作台(5),并将金丝缠绕固定在移动工作台侧面的转动卷轴(4)上,金丝一端穿过转动卷轴下面带有中心孔的针头(3),然后将金丝裸露端部点火烧制成球状; 步骤五:将步骤一中处理后的铜箔片放置于加热台(I)上并固定,保持时间3-5分钟; 步骤六:将移动工作台(5)下移至针头(3)底端金丝球与铜箔表面接触,然后移动工作台(5)施加180-240克力下压,并同时以180-210毫瓦的功率进行前后或左右振动,整个过程时间为170-200 1. A method of connecting a copper foil with gold, characterized in that: it comprises the following steps: Step 1: The copper foil surface to be connected with the mass concentration of 5% to 20% hydrochloric acid was washed for 5-20 minutes; step two: for the mass concentration of 5% -10%, 10-20 minutes ultrasonic cleaning in acetone, ultrasonic cleaning frequency of 20-30 kHz, after then rinsed with ultrapure water, dried, standby; three steps: cleaning heating stage ( the I), and the heating stage was heated to 50-200 ° C, a heating rate of 5-20 ° C / min; step four: washing the movable table (5), and wound around the movable table is rotatably mounted to the side of the gold the spool (4), one end of the gold wire through the needle following rotation of the reel (3) with a center hole, and then the gold wire is made of fire exposed end point of spherical; step 5: after the step of processing a copper foil placed on a heating stage (I) and secured, retention time 3-5 minutes; step six: moving the needle to move the lower table (5) (3) in contact with the bottom end of the gold wire the copper foil surface, and then moving table (5) applying a pressure of 180-240 grams, and while 180-210 milliwatts of power before and after the vibration or around, the entire process time is 170-200 秒; 步骤七:将移动工作台(5)上移合适位置后,剪断金丝,完成金丝与铜箔的点连接,然后取出连接部件,也可将移动工作台(5)水平移动合适位置后,重复步骤四后,剪断金丝,完成金丝与铜箔的线连接,然后取出连接部件。 Seconds; Step 7: the movable stage backward suitable location (5), cut gold wire, gold wire connected to the completion point of the copper foil, and then remove the connecting member can also be movable stage (5) moves horizontally place after repeat steps four, cut gold, copper and gold to complete wire connection, and then remove the connection member.
2.根据权利要求1所述的一种金丝与铜箔的连接方法,其特征在于,所述铜箔材料为纯铜或铜合金。 2. The method of gold wire connecting a copper foil according to claim, characterized in that the foil material is copper or a copper alloy.
3.根据权利要求1所述的一种金丝与铜箔的连接方法,其特征在于,所述铜箔为压延铜箔、电解铜箔或覆铜箔。 The method of connecting the gold wire and the copper foil of claim 1, wherein said foil is a rolled copper foil, electrolytic copper foil or a copper clad.
4.根据权利要求1所述的一种金丝与铜箔的连接方法,其特征在于,所述铜箔如采用压延铜箔,其表面压延流线的处理方式有两种:一、可以将待连接表面用1600-2000#金相砂纸打磨,然后进行步骤一至步骤七的操作;二、可以进行步骤一至步骤四的操作后,将步骤五中铜箔压延流线方向与移动工作台振动方向以45-90范围内的角度进行固定,然后再进行步骤六、步骤七的操作。 The connector according to claim 1. A method of gold and the copper foil as claimed in claim, wherein said copper foil as calendering, rolling the surface treatment of flow lines, there are two: one can be # 1600-2000 surfaces to be joined with a metallographic sandpaper, and then follow steps 1 to seven; Second, the steps may be performed to a fourth step, the fifth step of rolling copper and flow direction moving table direction of vibration an angle in the range of 45-90 to be fixed, and then the operation proceeds to step six, seven steps.
5.根据权利要求1所述的一种金丝与铜箔的连接方法,其特征在于,所述铜箔如采用电解铜箔,选择毛面作为连接表面时,其处理方式有两种:一、可以用质量浓度为20% -30%的盐酸进行清洗1-3分钟,然后进行步骤二至步骤七的操作;二、可以将待连接表面用1600-2000#金相砂纸打磨,然后进行步骤一至步骤七的操作。 The connector according to claim 1. A method of gold and the copper foil as claimed in claim, wherein said electrolytic copper foil such as copper foil, the matte side is selected as a connection surface which is treated in two ways: a , can be performed with a mass concentration of 20% -30% hydrochloric acid wash for 1-3 minutes, then steps two to seven step; two, can be connected with the surface # 1600-2000 metallographic sandpaper, and then proceeds to step a step operation to seven.
6.根据权利要求1所述的一种金丝与铜箔的连接方法,其特征在于,所述铜箔如采用覆铜箔,可以是有机树脂覆铜箔、金属基覆铜箔、陶瓷基覆铜箔、聚酯基覆铜箔、聚酰亚胺基覆铜箔、电子玻纤布基覆铜箔或复合基覆铜箔等,其铜箔面的处理方式按照所采用的是压延铜箔或电解铜箔进行处理。 The connector according to claim 1. A method of gold and the copper foil as claimed in claim, characterized in that, as the use of copper clad foil, an organic resin may be a copper clad, copper clad metal substrate, a ceramic substrate copper clad, copper clad polyester-based, polyimide-based copper clad, copper clad fiberglass cloth or an electronic composite substrate coated copper foil, copper foil surface treatment which is employed in accordance with the rolled copper an electrolytic copper foil or treated.
CN201310076360.5A 2013-03-04 2013-03-04 Connection method of gold wire and copper foil CN103151280B (en)

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TW200534417A (en) * 2004-04-12 2005-10-16 Nat Univ Chung Cheng Thermosonic wire bonding process for gold wires and copper pads by a gas-passivation device

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JPH03285336A (en) * 1990-03-31 1991-12-16 Toshiba Corp Semiconductor device
JP2006120893A (en) * 2004-10-22 2006-05-11 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
US7656045B2 (en) * 2006-02-23 2010-02-02 Freescale Semiconductor, Inc. Cap layer for an aluminum copper bond pad

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CN1314225A (en) * 2000-02-18 2001-09-26 德克萨斯仪器股份有限公司 Structure and method for copper plating layer integrated circuit welding spot
TW200534417A (en) * 2004-04-12 2005-10-16 Nat Univ Chung Cheng Thermosonic wire bonding process for gold wires and copper pads by a gas-passivation device

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