CN103149963A - Linear power circuit with high power supply rejection ratio - Google Patents
Linear power circuit with high power supply rejection ratio Download PDFInfo
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- CN103149963A CN103149963A CN2012104599304A CN201210459930A CN103149963A CN 103149963 A CN103149963 A CN 103149963A CN 2012104599304 A CN2012104599304 A CN 2012104599304A CN 201210459930 A CN201210459930 A CN 201210459930A CN 103149963 A CN103149963 A CN 103149963A
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- manages
- resistance
- power supply
- nmos
- pmos
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Abstract
The invention discloses a linear power circuit with a high power supply rejection ratio. In the linear power circuit, two biasing circuits, namely a biasing circuit a and a biasing circuit b, are adopted, during electrification, the biasing circuit b supplies a reference voltage and a reference current to an error amplifier, the power supply of the biasing circuit b is a system power supply VBAT, when the power supply is stabilized, the output VLDO of the linear power supply supplies power to the biasing circuit a, the biasing circuit b stops working at the moment, the biasing circuit a supplies the reference voltage and the reference current to the error amplifier, and because the stability of the VLDO is far higher than that of the power supply VBAT, the stability of the reference voltage and reference current generated by the biasing circuit a is far higher than that of the reference voltage and reference current generated by the biasing circuit b, so that the linear power circuit with high power supply rejection ratio is realized.
Description
Technical field
The present invention relates generally to the design field of linear power supply circuit, refers in particular to a kind of linear power supply circuit of high PSRR.
Background technology
For Analogous Integrated Electronic Circuits, the quality of its performance depends on several factors, wherein the quality of power supply is also a key factor that affects the Analogous Integrated Electronic Circuits performance, some high-precision analog circuit particularly, as high-precision adc (ADC), high precision digital-to-analog converter (DAC), instrument amplifier etc., this class circuit all needs a high-quality Power supply usually, usually be all to adopt linear power supply (LDO), the major function one of LDO is to carry out voltage transitions, the 2nd, and the noise on filter out power.Power Supply Rejection Ratio is to weigh a key index of mimic channel, certainly be also a key index weighing LDO, what it characterized is the ability that the anti-power supply of LDO output disturbs, Power Supply Rejection Ratio is higher, its output is more stable, the performance of mimic channel is more guaranteed, and design a linear voltage regulator with high PSRR is a difficult point always.
Summary of the invention
The problem to be solved in the present invention just is: for the problem that prior art exists, propose a kind of linear power supply circuit of high PSRR.
The solution that the present invention proposes is: this circuit adopts two biasing circuits with mistake, i.e. biasing circuit a, and biasing circuit b provides reference voltage and reference current with biasing circuit b to error amplifier when powering on, and the power supply of biasing circuit b is system power supply V
BAT, after power supply is stable, with the output V of linear power supply
LDOGive biasing circuit a power supply, this moment, biasing circuit b quit work, provided reference voltage and reference current by biasing circuit a to error amplifier, due to V
LDOStability much larger than power supply V
BATSo, the reference voltage that the reference voltage that biasing circuit a produces and the stability of reference current produce far above biasing circuit b and the stability of reference current, thus realized a kind of linear power supply circuit of high PSRR.
Description of drawings
Fig. 1 is circuit theory schematic diagram of the present invention;
Embodiment
Below with reference to accompanying drawing and concrete enforcement, the present invention is described in further details.
As shown in Figure 1, biasing circuit a and biasing circuit b circuit structure are identical, and just power supply is distinguished to some extent, and the power supply of biasing circuit a is the output V of linear power supply
LDO, the power supply of biasing circuit b is system power supply V
BAT, when circuit powers on, V
LDOVoltage does not also establish, at this moment the bias voltage V of error amplifier EA
ref, bias current I
refB provides by biasing circuit, and biasing circuit a does not work.Work as V
BATRise gradually, V
LDOAlso can increase gradually, when increasing to certain value, biasing circuit a also starts working, at this moment the bias voltage V of EA
ref, bias current I
refProvided simultaneously by biasing circuit a, b, this moment, NMOS managed M
a5, M
b5Leakage current all pass through resistance R
PAnd R
0, due to V
LDOIncrease gradually, so M
a5Leakage current also increase gradually, NMOS manages M
a9, M
b9Grid voltage increase gradually, due to NMOS pipe M
a9W/L much smaller than M
b9W/L, according to NMOS pipe saturation region leakage current expression formula
Due to NMOS pipe M
a9, M
b9V
gsChange identical, but M
b9Leakage current I
dsAdded value is much larger than M
a9The added value of leakage current, due to the characteristic of MOS itself, in order to keep so large electric current, NMOS manages M
b9V
dsCan increase, i.e. M
b9Drain voltage can increase, when it increases to certain value, can make NMOS pipe M
b6V
gs<V
th, i.e. M
b6By, biasing circuit b quits work, at this moment the bias voltage V of EA
ref, bias current I
refA provides by biasing circuit, and circuit powers on and completes.
After biasing circuit a work, flow through resistance R
PElectric current circuit parameter and the resistance R of biasing circuit a are arranged fully
PAnd R
0Value determine, suppose that NMOS manages M
a5Leakage current be I
ds5, and hypothesis forms current mirror M
a5And M
a6W/L identical, M
a1And M
a2W/L identical, ignore NMOS pipe M
a9Channel modulation corresponding,
Suppose
The reference voltage of EA
V
ref=I
ds5·(R
0+R
P) (4)
The reference current I of EA
ref=I
ds5, according to amplifier characteristic V as can be known
F=V
ref, namely
Namely
By formula (6) as can be known, the output voltage V of linear power supply
LDOCan be by changing variable resistor R
PValue regulate.
In sum, this circuit adopts two biasing circuits with crossing, i.e. biasing circuit a, and the mode that biasing circuit b works stage by stage makes after the circuit normal operation output V with linear power supply
LDOTo the offset generating circuit power supply, greatly improved the stability of bias voltage and the bias current of its generation, thereby greatly improved the final output V of linear power supply
LDOHave high Power Supply Rejection Ratio, thereby realized a kind of linear power supply circuit with high PSRR.
Claims (1)
1. the linear power supply circuit of a high PSRR is characterized in that:
By biasing circuit a, biasing circuit b, resistance R
P, resistance R
0, resistance R
1, resistance R
2, capacitor C
C, error amplifier EA and power tube M
PForm; Biasing circuit a comprises PMOS pipe M
a1, PMOS manages M
a2, PMOS manages M
a3, PMOS manages M
a4, NMOS manages M
a5, NMOS manages M
a6, NMOS manages M
a7, NMOS manages M
a8, NMOS manages M
a9, resistance R
a1, resistance R
a2, the power supply of biasing circuit a is the output V of linear power supply
LDO, PMOS manages M
a1, M
a2, M
a3, M
a4And resistance R
a1An end be connected to V
LDO, resistance R
a1The other end be connected to NMOS pipe M
a7Grid and NMOS pipe M
a8Drain electrode, resistance R
a2One terminate to NMOS pipe M
a7Source electrode and NMOS pipe M
a8Grid, the other end is received ground, NMOS manages M
a8, M
a9Source ground, PMOS manages M
a4The grid leak short circuit and with PMOS pipe M
a3Grid be connected to form current-mirror structure, and be connected to NMOS pipe M
a7Drain electrode, NMOS manages M
a6The grid leak short circuit and with NMOS pipe M
a5Grid be connected to form current-mirror structure, and be connected to PMOS pipe M
a3Drain electrode, NMOS manages M
a5Source electrode be connected to resistance R
pAn end, resistance R
pThe other end be connected to resistance R
0An end and NMOS pipe M
a9Grid, R
0The other end receive, PMOS manages M
a2The grid leak short circuit and with PMOS pipe M
a1Grid be connected to form current-mirror structure, and be connected to NMOS pipe M
a5Drain electrode, PMOS manages M
a1Drain electrode be connected to I
refBiasing circuit b manages M by PMOS
b1, PMOS manages M
b2, PMOS manages M
b3, PMOS manages M
b4, NMOS manages M
b5, NMOS manages M
b6, NMOS manages M
b7, NMOS manages M
b8, NMOS manages M
b9, resistance R
b1, resistance R
b2Form, its power supply is system power supply V
BAT, the circuit structure of biasing circuit b and annexation and biasing circuit a are in full accord; The positive input terminal of error amplifier EA connects feedback voltage V
F, i.e. resistance R
1And resistance R
2An end, negative input end is connected to V
ref, its reference current is input as I
ref, the output of EA is connected to PMOS power tube M
PGrid, M
PSource electrode be connected to power supply V
BAT, drain electrode is connected to resistance R
1And capacitor C
CAn end, resistance R
2And capacitor C
COther end ground connection, M
PDrain electrode V
LDOBe the output of linear power supply.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210459930.4A CN103149963B (en) | 2012-11-15 | 2012-11-15 | Linear power circuit with high power supply rejection ratio |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210459930.4A CN103149963B (en) | 2012-11-15 | 2012-11-15 | Linear power circuit with high power supply rejection ratio |
Publications (2)
Publication Number | Publication Date |
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CN103149963A true CN103149963A (en) | 2013-06-12 |
CN103149963B CN103149963B (en) | 2014-09-03 |
Family
ID=48548104
Family Applications (1)
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---|---|---|---|
CN201210459930.4A Active CN103149963B (en) | 2012-11-15 | 2012-11-15 | Linear power circuit with high power supply rejection ratio |
Country Status (1)
Country | Link |
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CN (1) | CN103149963B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104426525A (en) * | 2013-08-22 | 2015-03-18 | 联发科技股份有限公司 | Signal generation apparatus |
CN107168432A (en) * | 2017-05-31 | 2017-09-15 | 成都锐成芯微科技股份有限公司 | Low-power dissipation power supply power supply circuit |
CN117075669A (en) * | 2023-09-20 | 2023-11-17 | 江苏帝奥微电子股份有限公司 | High PSRR reference current generation circuit and method without starting circuit |
Citations (4)
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US6518737B1 (en) * | 2001-09-28 | 2003-02-11 | Catalyst Semiconductor, Inc. | Low dropout voltage regulator with non-miller frequency compensation |
CN101441489A (en) * | 2008-12-29 | 2009-05-27 | 苏州市华芯微电子有限公司 | Integrated circuit for implementing high PSRR and method thereof |
CN202183059U (en) * | 2011-06-23 | 2012-04-04 | 上海集成电路研发中心有限公司 | Low-dropout linear voltage regulator |
CN102681582A (en) * | 2012-05-29 | 2012-09-19 | 昆山锐芯微电子有限公司 | Linear voltage stabilizing circuit with low voltage difference |
-
2012
- 2012-11-15 CN CN201210459930.4A patent/CN103149963B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6518737B1 (en) * | 2001-09-28 | 2003-02-11 | Catalyst Semiconductor, Inc. | Low dropout voltage regulator with non-miller frequency compensation |
CN101441489A (en) * | 2008-12-29 | 2009-05-27 | 苏州市华芯微电子有限公司 | Integrated circuit for implementing high PSRR and method thereof |
CN202183059U (en) * | 2011-06-23 | 2012-04-04 | 上海集成电路研发中心有限公司 | Low-dropout linear voltage regulator |
CN102681582A (en) * | 2012-05-29 | 2012-09-19 | 昆山锐芯微电子有限公司 | Linear voltage stabilizing circuit with low voltage difference |
Non-Patent Citations (1)
Title |
---|
黄圣专,周锋,赵喆: "一种新型高电源抑制比的低压差线性稳压器", 《复旦学报(自然科学版)》 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104426525A (en) * | 2013-08-22 | 2015-03-18 | 联发科技股份有限公司 | Signal generation apparatus |
CN104426525B (en) * | 2013-08-22 | 2018-03-23 | 联发科技股份有限公司 | Signal generation device |
CN107168432A (en) * | 2017-05-31 | 2017-09-15 | 成都锐成芯微科技股份有限公司 | Low-power dissipation power supply power supply circuit |
CN107168432B (en) * | 2017-05-31 | 2019-06-25 | 成都锐成芯微科技股份有限公司 | Low-power dissipation power supply power supply circuit |
CN117075669A (en) * | 2023-09-20 | 2023-11-17 | 江苏帝奥微电子股份有限公司 | High PSRR reference current generation circuit and method without starting circuit |
Also Published As
Publication number | Publication date |
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CN103149963B (en) | 2014-09-03 |
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