CN103113884A - LED (light-emitting diode) plant growth lamp based on nitride red fluorescent powder - Google Patents

LED (light-emitting diode) plant growth lamp based on nitride red fluorescent powder Download PDF

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Publication number
CN103113884A
CN103113884A CN2013100468695A CN201310046869A CN103113884A CN 103113884 A CN103113884 A CN 103113884A CN 2013100468695 A CN2013100468695 A CN 2013100468695A CN 201310046869 A CN201310046869 A CN 201310046869A CN 103113884 A CN103113884 A CN 103113884A
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China
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plant growth
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led
growth lamp
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CN2013100468695A
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Chinese (zh)
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黎广才
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江门市远大发光材料有限公司
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Publication of CN103113884A publication Critical patent/CN103113884A/en

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Abstract

The invention discloses an LED (light-emitting diode) plant growth lamp based on nitride red fluorescent powder. The LED plant growth lamp is mainly prepared by packaging a blue light chip and a rare-earth fluorescent powder capable of emitting red orange light; and the rare-earth fluorescent powder is one or combination of more of M1-x-yAlSiN3:xEu<2+>,yRe<3+>, wherein Re<3+> is one or combination of more of Ce<3+>, Dy<3+>, Nd<3+>, Ho<3+> and Er<3+>, M is one or both of Ca and Sr, 0.001<=x<=0.1, and 0<=y<=0.1. The emission spectrum of the LED plant growth lamp is mainly centered at 440-470 nm blue light range and 630-720 nm red orange range; and the plant growth lamp can effectively promote plant growth as well as blossoming and fruiting, has the advantages of simple structural design and low manufacturing cost, is convenient to operate, and can be widely used in the aspect of plant growth.

Description

A kind of LED plant growth lamp based on nitride red fluorescent powder

Technical field

The present invention relates to a kind of LED lamp red fluorescence powder, and a kind of LED plant growth lamp based on this red fluorescence powder.

Background technology

China's agrotechnique development is very fast, and wherein, adopting source of artificial light is the effective way that promotes its growth to plant light compensation.The absorption spectrum of green plants is very similar, mainly concentrates on the blood orange light district of blue light region and the 630~720nm of 400~470 nm in the visible region.Therefore, the light source emission band concentrates on these two zones to can Promoting plant growth.China is less about the research of plant growth light source, and the light source that adopts mostly is incandescent light, luminescent lamp etc.These light source energy consumptions are high, efficiency of conversion is low, and these light sources to offer blue light and ruddiness content that plants needs lower.

LED(light emitting diode) as the novel energy-conserving light source,, because its light efficiency is high, less energy consumption, the life-span is long, is called as the electricity-saving lamp that continues, luminescent lamp, after the discharge gas lamp the 4th generation green light source.In recent years, the development of LED correlative technology field is advanced by leaps and bounds, no matter be at driving power, and heat radiation, chip manufacturing, encapsulation etc. are technical, or at exterior lighting, interior lighting, Landscape Lighting shows, on the ranges of application such as backlight, all obtains important breakthrough.It is simple that the white light LEDs that fluorescent material transforms has manufacture method, the advantages such as good stability, large-scale production aspect illumination.But LED is less aspect the research of plant growth lamp, report mostly be blue light greatly and red light chips is used in combination, driving circuit is complicated, the life-time service less stable.The LED plant growth lamp that fluorescent material transforms can produce the natural light environment of simulation, and for the illumination condition that provides plant normal growth to need, structure design is simple, and is easy to operate, and cost of manufacture is low, has certain popularization practical value.

Summary of the invention

One object of the present invention is to provide a kind of LED lamp red fluorescence powder and preparation method thereof.

Another object of the present invention is to provide a kind of LED plant growth lamp based on above-mentioned red fluorescence powder.

The technical solution adopted in the present invention is:

A kind of LED lamp red fluorescence powder, its chemical expression formula is M 1-x-yAlSiN 3: xEu 2+, yRe 3+, wherein, Re 3+Be Ce 3+, Dy 3+, Nd 3+, HO 3+, Er 3+In one or more combinations, M is Ca, a kind of in Sr or two kinds, 0.001≤x≤0.1,0≤y≤0.1.

The preparation method of above-mentioned red fluorescence powder comprises the steps:

(1) take oxide compound or the nitride of each element by the chemical expression formula of fluorescent material, add fusing assistant boric acid and carbon powder of reducing agent, be ground;

(2) step (1) gained mixture is under reducing atmosphere, and 1500~1900 ℃ of sintering 2~8 h pulverize and sieve after cooling, obtain required fluorescent material.

Described reducing atmosphere is the gas mixture of hydrogen, ammonia, charcoal, carbon monoxide or nitrogen and hydrogen.

A kind of LED plant growth lamp is mainly formed by blue chip and fluorescent RE powder encapsulation, and described fluorescent RE powder is one or more combinations that above-mentioned LED lamp is used red fluorescence powder.

The emmission spectrum main peak of described LED plant growth lamp is positioned at the mixing zone of 630~720nm or 630~720nm and 440~470nm.

Described blue chip is GaN base inorganic semiconductor LED crystal grain, and the emmission spectrum main peak is positioned at 440~470nm.

In LED plant growth lamp device package process, the consumption of fluorescent material is 4~30wt% of packaging plastic.

Beneficial effect of the present invention is:

(1) red fluorescence powder emission blood orange light of the present invention, have high assimilated efficiency at 440~470nm blue wave band, and transformation efficiency is high, reaches energy-conservation purpose.Can be according to different sorts and the requirement of LED lamp chip, kind, the proportioning of the different fluorescent material of design, thus the emmission spectrum of change LED lamp produces the LED plant growth lamp that is fit to different demand of plant growth.

(2) emmission spectrum of LED plant growth lamp of the present invention mainly concentrates on the blood orange light district of blue light region and 630~720 nm of 440~470 nm, effective Promoting plant growth and yielding positive results, and structure design is simple, easy to operate, cost of manufacture is low, can be widely used in the plant-growth aspect.

Description of drawings

Fig. 1 be in the invention process example 1 in the Ca of rubescent orange light 0.99AlSiN 3: 0.01Eu 2+Emmission spectrum under room temperature ( λ exm=460 nm);

Fig. 2 is that the electricity of LED plant growth lamp in the embodiment of the present invention 2 causes the utilizing emitted light spectrogram;

Fig. 3 is that the electricity of LED plant growth lamp in the embodiment of the present invention 3 causes the utilizing emitted light spectrogram;

Fig. 4 is that the electricity of LED plant growth lamp in the embodiment of the present invention 4 causes the utilizing emitted light spectrogram;

Fig. 5 is that the electricity of LED plant growth lamp in the embodiment of the present invention 5 causes the utilizing emitted light spectrogram.

Embodiment

A kind of LED lamp red fluorescence powder, its chemical expression formula is M 1-x-yAlSiN 3: xEu 2+, yRe 3+, wherein, Re 3+Be Ce 3+, Dy 3+, Nd 3+, HO 3+, Er 3+In one or more combinations, M is Ca, a kind of in Sr or two kinds, 0.001≤x≤0.1,0≤y≤0.1.

The preparation method of above-mentioned red fluorescence powder comprises the steps:

(1) take oxide compound or the nitride of each element by the chemical expression formula of fluorescent material, add fusing assistant boric acid and carbon powder of reducing agent, be ground;

(2) step (1) gained mixture is under reducing atmosphere, and 1500~1900 ℃ of sintering 2~8 h pulverize and sieve after cooling, obtain required fluorescent material.

Described reducing atmosphere is the gas mixture of hydrogen, ammonia, charcoal, carbon monoxide or nitrogen and hydrogen.

A kind of LED plant growth lamp is mainly formed by blue chip and fluorescent RE powder encapsulation, and described fluorescent RE powder is one or more combinations that above-mentioned LED lamp is used red fluorescence powder.

The emmission spectrum main peak of described LED plant growth lamp is positioned at the mixing zone of 630nm or 630~720nm and 440~470nm.

Described blue chip is GaN base inorganic semiconductor LED crystal grain, and the emmission spectrum main peak is positioned at 440~470nm.

In LED plant growth lamp device package process, the consumption of fluorescent material is 4~40wt% of packaging plastic.

The present invention is further illustrated below in conjunction with embodiment, but be not limited to this.

Embodiment 1

Ca 0.99AlSiN 3: 0.01Eu 2+Preparation, comprise the steps:

Chemical expression formula by fluorescent material takes following raw material

Ca 3N 2:?2.45?g

AlN:?2.05?g

Si 3N 4:2.34g

Eu 2O 3?:?0.088?g

H 3BO 3:?0.039?g

(2) above-mentioned raw materials is after being ground, under hydrogen reducing atmosphere, 1500 ℃ of sintering 8 hours pulverize and sieve after cooling, namely obtain fluorescent material used in the present invention after the fluorescent material ball mill pulverizing that obtains by aforesaid method, its emmission spectrum as shown in Figure 1.

Embodiment 2

Ca 0.85AlSiN 3: 0.05Eu 2+, 0.10Dy 3+Preparation, comprise the steps:

(1) the chemical constitution expression by fluorescent material takes raw material

Ca 3N 2:?1.68g

AlN:?1.64?g

Si 3N 4:1.87g

Eu 2O 3?:?0.35?g

Dy 2O 3:?0.75?g

H 3BO 3:?0.033?g

(2) with above-mentioned raw materials after being ground, under the ammonia reducing atmosphere, 1800 ℃ of sintering 4 hours pulverize and sieve after cooling, namely obtain fluorescent material used in the present invention after the fluorescent material ball mill pulverizing that obtains by aforesaid method.

To make the direct encapsulation of nitride fluorescent material and LED blue chip and make the LED plant growth lamp, in the device package process, the weight ratio of fluorescent material used is 10% of packaging plastic, and its electricity causes emmission spectrum as shown in Figure 2.

Embodiment 3

Sr 0.10Ca 0.70AlSiN 3: 0.10Eu 2+, 0.10Er 3+Preparation, comprise the steps:

(1) the chemical constitution expression by fluorescent material takes following raw material

Sr 3N 2:0.29

Ca 3N 2:?1.15g

AlN:?1.37?g

Si 3N 4:1.56g

Eu 2O 3?:?0.59?g

Er 2O 3:?0.63?g

H 3BO 3:?0.031?g

(2) with above-mentioned raw materials after being ground, under the carbon monoxide reducing atmosphere, 1900 ℃ of sintering 2 hours pulverize and sieve after cooling, namely obtain fluorescent material used in the present invention after the fluorescent material ball mill pulverizing that obtains by aforesaid method.

To make the direct encapsulation of nitride fluorescent material and LED blue chip and make the LED plant growth lamp, in the device package process, the weight ratio of fluorescent material used is 25% of packaging plastic, and its electricity causes emmission spectrum as shown in Figure 3.

Embodiment 4

Sr 0.5Ca 0.4AlSiN 3: 0.08Eu 2+, 0.02Ho 3+The preparation of system comprises the steps:

(1) the chemical constitution expression by fluorescent material takes following raw material

Sr 3N 2:?1.66

Ca 3N 2:?0.66g

AlN:?1.37?g

Si 3N 4:1.56g

Eu 2O 3?:?0.47?g

Er 2O 3:?0.13?g

H 3BO 3:?0.032?g

(2) with above-mentioned raw materials after being ground, nitrogen, hydrogen (3:1, V/v)Under reducing atmosphere, 1700 ℃ of sintering 6 hours pulverize and sieve after cooling, namely obtain fluorescent material used in the present invention after the fluorescent material ball mill pulverizing that obtains by aforesaid method.

To make the direct encapsulation of nitride fluorescent material and blue-light LED chip and make the LED plant growth lamp, in the device package process, the weight ratio of fluorescent material used is 30% of packaging plastic.Its electricity causes the utilizing emitted light spectrogram as shown in Figure 4.

Embodiment 5

After the nitride red fluorescent material of the wavelength R680 of the wavelength R660 of embodiment 3 preparation and embodiment 2 preparations is mixed by weight the 6:4 ratio, directly encapsulate with blue-light LED chip and make the LED plant growth lamp, in the device package process, the weight ratio of fluorescent material used is 15% of packaging plastic, and its electricity causes the utilizing emitted light spectrogram as shown in Figure 5.

In above embodiment, LED blue chip used is GaN base inorganic semiconductor LED crystal grain, and the emmission spectrum main peak is positioned at 440~470nm.

Only for introducing preferred case of the present invention, to those skilled in the art, any apparent changes and improvements of carrying out in the scope that does not deviate from spirit of the present invention all should be regarded as a part of the present invention to above embodiment.

Claims (7)

1. a LED lamp red fluorescence powder, is characterized in that, the chemical expression formula of described red fluorescence powder is M 1-x-yAlSiN 3: xEu 2+, yRe 3+, Re 3+Be Ce 3+, Dy 3+, Nd 3+, HO 3+, Er 3+In one or more combinations, M is Ca, a kind of in Sr or two kinds, 0.001≤x≤0.1,0≤y≤0.1.
2. the preparation method of the described red fluorescence powder of claim 1, comprise the steps:
(1) take oxide compound or the nitride of each element by the expression of fluorescent material, add fusing assistant boric acid and carbon powder of reducing agent, be ground;
(2) step (1) gained mixture is under reducing atmosphere, and 1500~1900 ℃ of sintering 2~8 h pulverize and sieve after cooling, obtain required fluorescent material.
3. preparation method according to claim 2, is characterized in that, described reducing atmosphere is the gas mixture of hydrogen, ammonia, charcoal, carbon monoxide or nitrogen and hydrogen.
4. a LED plant growth lamp, mainly formed by blue chip and fluorescent RE powder encapsulation, and described fluorescent RE powder is one or more combinations of the described red fluorescence powder of claim 1.
5. LED plant growth lamp according to claim 4, is characterized in that, the emmission spectrum main peak of described LED plant growth lamp is positioned at the mixing zone of 630~720nm or 630~720nm and 440~470nm.
6. LED plant growth lamp according to claim 4, is characterized in that, described blue chip is GaN base inorganic semiconductor LED crystal grain, and the emmission spectrum main peak is positioned at 440~470nm.
7. LED plant growth lamp according to claim 4, is characterized in that, in LED plant growth lamp device package process, the consumption of fluorescent material is 4~30wt% of packaging plastic.
CN2013100468695A 2013-02-05 2013-02-05 LED (light-emitting diode) plant growth lamp based on nitride red fluorescent powder CN103113884A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104303869A (en) * 2014-11-05 2015-01-28 瑞丽滇蔗农业科技开发有限公司 Light source combining device and method for inducing sugarcane trees to blossom
CN105309214A (en) * 2015-10-14 2016-02-10 锡山区先锋家庭农场 A light supplementing device for greenhouses
CN106318382A (en) * 2016-08-24 2017-01-11 甘肃稀土新材料股份有限公司 Nitride red steady persistence material and preparing method thereof
CN108617325A (en) * 2018-06-01 2018-10-09 深圳市昀晨光电有限公司 A method of promote orchid to grow using LED plant growth lamp
CN109054817A (en) * 2017-09-30 2018-12-21 有研稀土新材料股份有限公司 A kind of nitride fluorescent substances and the light emitting device containing the fluorescent material

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JP2006306981A (en) * 2005-04-27 2006-11-09 Nichia Chem Ind Ltd Nitride phosphor and light emitting device using the same
CN101451063A (en) * 2007-11-14 2009-06-10 克里公司 Cerium and europium doped phosphor compositions and light emitting devices including the same
WO2012070435A1 (en) * 2010-11-25 2012-05-31 シャープ株式会社 Light emitting device, led light source for plant cultivation, and plant factory

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JP2006306981A (en) * 2005-04-27 2006-11-09 Nichia Chem Ind Ltd Nitride phosphor and light emitting device using the same
CN101451063A (en) * 2007-11-14 2009-06-10 克里公司 Cerium and europium doped phosphor compositions and light emitting devices including the same
WO2012070435A1 (en) * 2010-11-25 2012-05-31 シャープ株式会社 Light emitting device, led light source for plant cultivation, and plant factory

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104303869A (en) * 2014-11-05 2015-01-28 瑞丽滇蔗农业科技开发有限公司 Light source combining device and method for inducing sugarcane trees to blossom
CN104303869B (en) * 2014-11-05 2017-08-01 瑞丽滇蔗农业科技开发有限公司 The illuminant combined device and method of a kind of induction sugarcane florescence
CN105309214A (en) * 2015-10-14 2016-02-10 锡山区先锋家庭农场 A light supplementing device for greenhouses
CN106318382A (en) * 2016-08-24 2017-01-11 甘肃稀土新材料股份有限公司 Nitride red steady persistence material and preparing method thereof
CN109054817A (en) * 2017-09-30 2018-12-21 有研稀土新材料股份有限公司 A kind of nitride fluorescent substances and the light emitting device containing the fluorescent material
CN108617325A (en) * 2018-06-01 2018-10-09 深圳市昀晨光电有限公司 A method of promote orchid to grow using LED plant growth lamp

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